ES508088A0 - Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio. - Google Patents

Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio.

Info

Publication number
ES508088A0
ES508088A0 ES508088A ES508088A ES508088A0 ES 508088 A0 ES508088 A0 ES 508088A0 ES 508088 A ES508088 A ES 508088A ES 508088 A ES508088 A ES 508088A ES 508088 A0 ES508088 A0 ES 508088A0
Authority
ES
Spain
Prior art keywords
cristail
phosphoro
silicate
procedure
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES508088A
Other languages
English (en)
Other versions
ES8303819A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solarex Corp
Original Assignee
Solarex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarex Corp filed Critical Solarex Corp
Publication of ES508088A0 publication Critical patent/ES508088A0/es
Publication of ES8303819A1 publication Critical patent/ES8303819A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Surface Treatment Of Glass (AREA)
  • Photovoltaic Devices (AREA)
ES508088A 1980-12-18 1981-12-17 Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio. Expired ES8303819A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/217,742 US4360393A (en) 1980-12-18 1980-12-18 Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates

Publications (2)

Publication Number Publication Date
ES508088A0 true ES508088A0 (es) 1983-02-01
ES8303819A1 ES8303819A1 (es) 1983-02-01

Family

ID=22812324

Family Applications (1)

Application Number Title Priority Date Filing Date
ES508088A Expired ES8303819A1 (es) 1980-12-18 1981-12-17 Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio.

Country Status (7)

Country Link
US (1) US4360393A (es)
BE (1) BE891509A (es)
ES (1) ES8303819A1 (es)
FR (1) FR2496704A1 (es)
GB (1) GB2091709B (es)
IT (1) IT1142150B (es)
NL (1) NL8105737A (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153119A (ja) * 1984-01-20 1985-08-12 Fuji Electric Corp Res & Dev Ltd 不純物拡散方法
AU644025B2 (en) * 1990-10-24 1993-12-02 Schott Solar, Inc. Method and apparatus for forming diffusion junctions in solar cell substrates
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
JPH08153784A (ja) * 1994-11-28 1996-06-11 Nec Corp 半導体装置の製造方法
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
US8659668B2 (en) 2005-10-07 2014-02-25 Rearden, Llc Apparatus and method for performing motion capture using a random pattern on capture surfaces
US20080057686A1 (en) * 2006-08-31 2008-03-06 Melgaard Hans L Continuous dopant addition
US10699944B2 (en) 2018-09-28 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Surface modification layer for conductive feature formation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173802A (en) * 1961-12-14 1965-03-16 Bell Telephone Labor Inc Process for controlling gas phase composition
GB1037284A (en) * 1963-11-27 1966-07-27 Associated Semiconductor Mft Improvements in and relating to methods of heat treating semiconductor crystal bodies
DE1257989B (de) * 1964-07-09 1968-01-04 Telefunken Patent Verfahren zum Herstellen eines Silizium-Halbleiterkoerpers fuer eine Sonnenzelle
US3486951A (en) * 1967-06-16 1969-12-30 Corning Glass Works Method of manufacturing semiconductor devices
DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen

Also Published As

Publication number Publication date
GB2091709B (en) 1984-12-05
IT8125705A0 (it) 1981-12-18
NL8105737A (nl) 1982-07-16
IT1142150B (it) 1986-10-08
FR2496704A1 (fr) 1982-06-25
US4360393A (en) 1982-11-23
FR2496704B1 (es) 1984-11-30
BE891509A (fr) 1982-06-17
GB2091709A (en) 1982-08-04
ES8303819A1 (es) 1983-02-01

Similar Documents

Publication Publication Date Title
ES498404A0 (es) Un procedimiento para obtener una capa adherente no electro-litica de metal sobre un sustrato vitreo o ceramico
NL7901334A (nl) Halfgeleidersubstraat.
ES524884A0 (es) Un procedimiento para preparar una composicion copolimera para revestimiento de superficies.
IT8222469A0 (it) Procedimento e dispositivo per applicare strati di rivestimento superficiali, parziali.
ES507429A0 (es) Procedimiento mejorado para el recubrimiento por extrusion de un sustrato.
ES532104A0 (es) Un procedimiento mejorado para curar un revestimiento sobre un sustrato.
ES525454A0 (es) Procedimiento para la produccion de un recubrimiento mediante la aplicacion de una sustancia de recubrimiento sobre un sustrato.
ES528514A0 (es) Un metodo proporcionar un substrato un revestimiento superficial protector.
IT8120142A0 (it) Pre-polimeri di carburo di silicio ad elevato rendimento.
ES483560A0 (es) Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1
ES517489A0 (es) Un procedimiento mejorado para preparar un revestimiento transparente que lleva oxido de silicio.
IT8620742A1 (it) Procedimento di formazione di una pellicola composta di composto alifatico fluorurato su superficie di substrato
IT8023690A0 (it) Di biossido di silicio su un metodo per la formazione di strati substrato semiconduttore.
ES242527Y (es) Dispositivo para la colocacion de baldosas sobre superficiesa revestir.
IT7919824A0 (it) Disco per freni e relativo procedimento di fabbricazione.
ES490774A0 (es) Un metodo de preparar un revestimiento de oxido sobre un sustrato.
ES508088A0 (es) Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio.
NO830672L (no) Fremgangsmaate for inhibering av dannelse av silisiumdioksydbelegg.
MX152488A (es) Mejoras en dispositivo semiconductor con un sustrato voluminoso y una capa epitaxial desarrollada sobre el,y metodo para fabricar el mismo
ES519443A0 (es) Un metodo para depositar peliculas de oxido de vinadio sobre un substrato.
AR215897A1 (es) Un procedimiento de revestimiento de la superficie de objetos de vidrio mediante una capa constituida por al menos un oxido de un elemento de transicion de caracter metalico
ES2024474B3 (es) Procedimiento y dispositivo para el encargo de un medio de recubrimiento sobre un sustrato.
ES497673A0 (es) Un metodo de formar una pelicula protectora sobre la super- ficie de un bloque de material microporoso de aislamiento.
ES525290A0 (es) Metodo para el deposito de una capa de oxido de estano sobre un substrato, principalmente de vidrio
DK63383A (da) Fremgangsmaade til fremstilling af termoruder, der er forsynet med et metallisk, reflekterende overfladelag