BE891509A - Procede de formation d'une couche mince de phosphore sur des substrats de silicium par depot de vapeur de h3p04 - Google Patents
Procede de formation d'une couche mince de phosphore sur des substrats de silicium par depot de vapeur de h3p04Info
- Publication number
- BE891509A BE891509A BE0/206857A BE206857A BE891509A BE 891509 A BE891509 A BE 891509A BE 0/206857 A BE0/206857 A BE 0/206857A BE 206857 A BE206857 A BE 206857A BE 891509 A BE891509 A BE 891509A
- Authority
- BE
- Belgium
- Prior art keywords
- phosphorus
- forming
- thin film
- vapor deposition
- silicon substrates
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 238000007740 vapor deposition Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/217,742 US4360393A (en) | 1980-12-18 | 1980-12-18 | Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
BE891509A true BE891509A (fr) | 1982-06-17 |
Family
ID=22812324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE0/206857A BE891509A (fr) | 1980-12-18 | 1981-12-17 | Procede de formation d'une couche mince de phosphore sur des substrats de silicium par depot de vapeur de h3p04 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4360393A (fr) |
BE (1) | BE891509A (fr) |
ES (1) | ES8303819A1 (fr) |
FR (1) | FR2496704A1 (fr) |
GB (1) | GB2091709B (fr) |
IT (1) | IT1142150B (fr) |
NL (1) | NL8105737A (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60153119A (ja) * | 1984-01-20 | 1985-08-12 | Fuji Electric Corp Res & Dev Ltd | 不純物拡散方法 |
CA2070380A1 (fr) * | 1990-10-24 | 1992-04-25 | Mark D. Rosenblum | Methode et appareil pour former des noeuds de diffusion dans des substrats de piles solaires |
US5270248A (en) * | 1992-08-07 | 1993-12-14 | Mobil Solar Energy Corporation | Method for forming diffusion junctions in solar cell substrates |
JPH08153784A (ja) * | 1994-11-28 | 1996-06-11 | Nec Corp | 半導体装置の製造方法 |
US6143633A (en) * | 1995-10-05 | 2000-11-07 | Ebara Solar, Inc. | In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon |
US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
US8659668B2 (en) | 2005-10-07 | 2014-02-25 | Rearden, Llc | Apparatus and method for performing motion capture using a random pattern on capture surfaces |
WO2008027956A2 (fr) * | 2006-08-31 | 2008-03-06 | Despatch Industries Limited Partnership | Ajout continu de dopant |
US10699944B2 (en) | 2018-09-28 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface modification layer for conductive feature formation |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3173802A (en) * | 1961-12-14 | 1965-03-16 | Bell Telephone Labor Inc | Process for controlling gas phase composition |
GB1037284A (en) * | 1963-11-27 | 1966-07-27 | Associated Semiconductor Mft | Improvements in and relating to methods of heat treating semiconductor crystal bodies |
DE1257989B (de) * | 1964-07-09 | 1968-01-04 | Telefunken Patent | Verfahren zum Herstellen eines Silizium-Halbleiterkoerpers fuer eine Sonnenzelle |
US3486951A (en) * | 1967-06-16 | 1969-12-30 | Corning Glass Works | Method of manufacturing semiconductor devices |
DE2754833A1 (de) * | 1977-12-09 | 1979-06-13 | Ibm Deutschland | Phosphordiffusionsverfahren fuer halbleiteranwendungen |
-
1980
- 1980-12-18 US US06/217,742 patent/US4360393A/en not_active Expired - Lifetime
-
1981
- 1981-12-16 GB GB8137929A patent/GB2091709B/en not_active Expired
- 1981-12-17 BE BE0/206857A patent/BE891509A/fr not_active IP Right Cessation
- 1981-12-17 ES ES508088A patent/ES8303819A1/es not_active Expired
- 1981-12-18 IT IT25705/81A patent/IT1142150B/it active
- 1981-12-18 FR FR8123673A patent/FR2496704A1/fr active Granted
- 1981-12-18 NL NL8105737A patent/NL8105737A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
GB2091709B (en) | 1984-12-05 |
IT8125705A0 (it) | 1981-12-18 |
GB2091709A (en) | 1982-08-04 |
US4360393A (en) | 1982-11-23 |
IT1142150B (it) | 1986-10-08 |
ES508088A0 (es) | 1983-02-01 |
FR2496704A1 (fr) | 1982-06-25 |
FR2496704B1 (fr) | 1984-11-30 |
NL8105737A (nl) | 1982-07-16 |
ES8303819A1 (es) | 1983-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE | Patent lapsed |
Owner name: SOLAREX CORP. Effective date: 19841217 |