ES536695A0 - Procedimiento para fabricar dispositivos semiconductores utilizando mordentado ionico reactivo - Google Patents

Procedimiento para fabricar dispositivos semiconductores utilizando mordentado ionico reactivo

Info

Publication number
ES536695A0
ES536695A0 ES536695A ES536695A ES536695A0 ES 536695 A0 ES536695 A0 ES 536695A0 ES 536695 A ES536695 A ES 536695A ES 536695 A ES536695 A ES 536695A ES 536695 A0 ES536695 A0 ES 536695A0
Authority
ES
Spain
Prior art keywords
bitting
procedure
reactive ionic
semiconducting devices
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES536695A
Other languages
English (en)
Other versions
ES8703215A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES536695A0 publication Critical patent/ES536695A0/es
Publication of ES8703215A1 publication Critical patent/ES8703215A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
ES536695A 1983-10-13 1984-10-11 Procedimiento para fabricar dispositivos semiconductores utilizando mordentado ionico reactivo Expired ES8703215A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/541,459 US4496448A (en) 1983-10-13 1983-10-13 Method for fabricating devices with DC bias-controlled reactive ion etching

Publications (2)

Publication Number Publication Date
ES536695A0 true ES536695A0 (es) 1987-02-16
ES8703215A1 ES8703215A1 (es) 1987-02-16

Family

ID=24159685

Family Applications (1)

Application Number Title Priority Date Filing Date
ES536695A Expired ES8703215A1 (es) 1983-10-13 1984-10-11 Procedimiento para fabricar dispositivos semiconductores utilizando mordentado ionico reactivo

Country Status (7)

Country Link
US (1) US4496448A (es)
EP (2) EP0160034A4 (es)
JP (1) JPS6098630A (es)
KR (1) KR850700044A (es)
CA (1) CA1211867A (es)
ES (1) ES8703215A1 (es)
WO (1) WO1985001751A1 (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPS60126832A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
CA1269950C (en) * 1984-06-22 1990-06-05 DEVICE FOR DECOMPOSITION BY GLOWING DISCHARGE
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma
US4938859A (en) * 1984-07-31 1990-07-03 Vacuum Optics Corporation Of Japan Ion bombardment device with high frequency
FR2613168B1 (fr) * 1985-10-16 1991-08-30 France Etat Procede et dispositif de gravure par plasma d'un materiau
DE3721754A1 (de) * 1987-07-01 1989-01-12 Asea Brown Boveri Ueberbrueckungselement zur sicherung von batteriezellen
US5643473A (en) * 1987-07-31 1997-07-01 Hitachi, Ltd. Dry etching method
US5147500A (en) * 1987-07-31 1992-09-15 Hitachi, Ltd. Dry etching method
NL8701867A (nl) * 1987-08-07 1989-03-01 Cobrain Nv Werkwijze voor het behandelen, in het bijzonder droog etsen van een substraat en etsinrichting.
DE68910378T2 (de) * 1988-05-06 1994-03-03 Fujitsu Ltd Anlage zur Erzeugung dünner Schichten.
US5229303A (en) * 1989-08-29 1993-07-20 At&T Bell Laboratories Device processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperature
US5300460A (en) * 1989-10-03 1994-04-05 Applied Materials, Inc. UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
EP0439727A3 (en) * 1990-02-01 1991-10-02 Siemens Aktiengesellschaft Process to make grooves in silicon substrates for high density integrated circuits
JPH0590224A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法
US5849136A (en) * 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5397962A (en) * 1992-06-29 1995-03-14 Texas Instruments Incorporated Source and method for generating high-density plasma with inductive power coupling
US6190518B1 (en) * 1993-07-20 2001-02-20 Advanced Micro Devices, Inc. Device for reducing plasma etch damage and method for manufacturing same
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3535276B2 (ja) * 1995-07-28 2004-06-07 株式会社半導体エネルギー研究所 エッチング方法
TW459326B (en) * 2000-06-09 2001-10-11 Winbond Electronics Corp Method to measure the spacing between two electrodes by spectrum measurement and device thereof
US20030209198A1 (en) * 2001-01-18 2003-11-13 Andrew Shabalin Method and apparatus for neutralization of ion beam using ac or dc ion source
US20030077910A1 (en) * 2001-10-22 2003-04-24 Russell Westerman Etching of thin damage sensitive layers using high frequency pulsed plasma
US6727655B2 (en) 2001-10-26 2004-04-27 Mcchesney Jon Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
JP4830288B2 (ja) * 2004-11-22 2011-12-07 富士電機株式会社 プラズマ制御方法およびプラズマ制御装置
JP4724481B2 (ja) 2005-07-01 2011-07-13 出光ユニテック株式会社 二軸延伸フィルムの製造方法及び二軸延伸フィルム製造装置
US7799237B2 (en) * 2006-05-25 2010-09-21 Sony Corporation Method and apparatus for etching a structure in a plasma chamber
US9520275B2 (en) * 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
DE102011086111B4 (de) * 2011-11-10 2016-03-17 Fhr Anlagenbau Gmbh Anordnung zur Einspeisung von HF-Strom für Rohrkathoden

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816198A (en) * 1969-09-22 1974-06-11 G Babcock Selective plasma etching of organic materials employing photolithographic techniques
US3708418A (en) * 1970-03-05 1973-01-02 Rca Corp Apparatus for etching of thin layers of material by ion bombardment
FR2082505A5 (es) * 1970-03-18 1971-12-10 Radiotechnique Compelec
US3664942A (en) * 1970-12-31 1972-05-23 Ibm End point detection method and apparatus for sputter etching
US4312732A (en) * 1976-08-31 1982-01-26 Bell Telephone Laboratories, Incorporated Method for the optical monitoring of plasma discharge processing operations
DE2821119C2 (de) * 1978-05-13 1983-08-25 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage
US4340456A (en) * 1978-06-05 1982-07-20 Motorola, Inc. Method for detecting the end point of a plasma etching reaction
DE2831602A1 (de) * 1978-07-19 1980-02-07 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur erfassung von strahlparametern eines periodisch ueber eine zielflaeche gefuehrten, fokussierten ladungstraegerstrahls und messverfahren unter verwendung der vorrichtung
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
US4246060A (en) * 1979-01-02 1981-01-20 Motorola, Inc. Plasma development process controller
US4357195A (en) * 1979-06-25 1982-11-02 Tegal Corporation Apparatus for controlling a plasma reaction
JPS5681678A (en) * 1979-12-05 1981-07-03 Toshiba Corp Method and apparatus for plasma etching
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
JPS5825742B2 (ja) * 1979-12-22 1983-05-30 富士通株式会社 プラズマエッチング処理方法及び処理装置
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
DD153497A3 (de) * 1980-02-08 1982-01-13 Georg Rudakoff Verfahren und vorrichtung zum plasmaaetzen oder zur plasma cvd
US4358338A (en) * 1980-05-16 1982-11-09 Varian Associates, Inc. End point detection method for physical etching process
DD152364A1 (de) * 1980-08-05 1981-11-25 Reinhard Voigt Verfahren und vorrichtung zum plasmachemischen aetzen
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
JPS6030745B2 (ja) * 1981-04-20 1985-07-18 株式会社日立国際電気 高周波イオンエツチング装置
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
JPS58158929A (ja) * 1982-03-17 1983-09-21 Kokusai Electric Co Ltd プラズマ発生装置
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
JPS599173A (ja) * 1982-07-06 1984-01-18 ザ・パ−キン−エルマ−・コ−ポレイシヨン 材料を制御可能にエツチングする方法および装置

Also Published As

Publication number Publication date
WO1985001751A1 (en) 1985-04-25
EP0160034A4 (en) 1986-03-04
CA1211867A (en) 1986-09-23
US4496448A (en) 1985-01-29
JPS6098630A (ja) 1985-06-01
EP0160034A1 (en) 1985-11-06
EP0142269A1 (en) 1985-05-22
ES8703215A1 (es) 1987-02-16
KR850700044A (ko) 1985-10-21

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