ES491228A0 - Procedimiento para el tratamiento de desgastequimico o elec-tromagnetico selectivo de zonas seleccionadas de la superfi-cie de una presa de trabajo. - Google Patents
Procedimiento para el tratamiento de desgastequimico o elec-tromagnetico selectivo de zonas seleccionadas de la superfi-cie de una presa de trabajo.Info
- Publication number
- ES491228A0 ES491228A0 ES491228A ES491228A ES491228A0 ES 491228 A0 ES491228 A0 ES 491228A0 ES 491228 A ES491228 A ES 491228A ES 491228 A ES491228 A ES 491228A ES 491228 A0 ES491228 A0 ES 491228A0
- Authority
- ES
- Spain
- Prior art keywords
- thromagnetic
- elec
- dam
- wear
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Weting (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/037,074 US4283259A (en) | 1979-05-08 | 1979-05-08 | Method for maskless chemical and electrochemical machining |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8103206A1 ES8103206A1 (es) | 1981-02-16 |
ES491228A0 true ES491228A0 (es) | 1981-02-16 |
Family
ID=21892301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES491228A Granted ES491228A0 (es) | 1979-05-08 | 1980-05-07 | Procedimiento para el tratamiento de desgastequimico o elec-tromagnetico selectivo de zonas seleccionadas de la superfi-cie de una presa de trabajo. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4283259A (es) |
EP (1) | EP0019064B1 (es) |
JP (1) | JPS55148771A (es) |
BR (1) | BR8002526A (es) |
CA (1) | CA1171381A (es) |
DE (1) | DE3060691D1 (es) |
ES (1) | ES491228A0 (es) |
ZA (1) | ZA801244B (es) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577938A (en) * | 1980-06-18 | 1982-01-16 | Fujitsu Ltd | Method for forming thin film pattern |
US4389291A (en) * | 1981-06-19 | 1983-06-21 | Bell Telephone Laboratories, Incorporated | Photoelectrochemical processing of InP-type devices |
JPS59501199A (ja) * | 1982-08-23 | 1984-07-12 | グレイヴュア、アソウシエイシャン、アヴ、アメリカ、インコ−パレイテイド | グラビア・シリンダにグラビア凹点を形成する方法及び装置 |
US4415414A (en) * | 1982-09-10 | 1983-11-15 | Bell Telephone Laboratories, Incorporated | Etching of optical surfaces |
DE131367T1 (de) * | 1983-05-30 | 1985-11-21 | Inoue-Japax Research Inc., Yokohama, Kanagawa | Verfahren und einrichtung zum bearbeiten von keramischen werkstoffen. |
US4497692A (en) * | 1983-06-13 | 1985-02-05 | International Business Machines Corporation | Laser-enhanced jet-plating and jet-etching: high-speed maskless patterning method |
US4608138A (en) * | 1984-02-16 | 1986-08-26 | Mitsubishi Denki Kabushiki Kaisha | Electrolytic method and apparatus |
JPS617639A (ja) * | 1984-06-22 | 1986-01-14 | Toshiba Corp | 半導体薄膜の分解装置 |
DE3608604A1 (de) * | 1986-03-14 | 1987-09-17 | Siemens Ag | Strukturierbares fotoelektrochemisches abtragen |
US4818834A (en) * | 1988-03-21 | 1989-04-04 | Raycon Corporation | Process for drilling chamfered holes |
US4904340A (en) * | 1988-10-31 | 1990-02-27 | Microelectronics And Computer Technology Corporation | Laser-assisted liquid-phase etching of copper conductors |
US5149404A (en) * | 1990-12-14 | 1992-09-22 | At&T Bell Laboratories | Fine line scribing of conductive material |
JPH05293332A (ja) * | 1992-04-21 | 1993-11-09 | Showa Shell Sekiyu Kk | 揮発性有機化合物含有ガスの除去方法 |
DE4328628A1 (de) * | 1993-08-20 | 1994-01-20 | Ulrich Prof Dr Mohr | Verfahren zur Herstellung einer geometrischen strukturierten Oxidschicht auf einem Siliziumkörper |
US5509556A (en) * | 1994-11-17 | 1996-04-23 | International Business Machines Corporation | Process for forming apertures in a metallic sheet |
DE19653097A1 (de) * | 1996-12-20 | 1998-07-02 | Forschungszentrum Juelich Gmbh | Schicht mit porösem Schichtbereich, eine solche Schicht enthaltendes Interferenzfilter sowie Verfahren zu ihrer Herstellung |
WO1999045179A1 (en) * | 1998-03-05 | 1999-09-10 | Obducat Ab | Method of etching |
US6248509B1 (en) | 1999-07-27 | 2001-06-19 | James E. Sanford | Maskless photoresist exposure system using mems devices |
US7106493B2 (en) * | 1999-07-27 | 2006-09-12 | Sanford James E | MEMS-based valve device |
US7329361B2 (en) * | 2003-10-29 | 2008-02-12 | International Business Machines Corporation | Method and apparatus for fabricating or altering microstructures using local chemical alterations |
US8529738B2 (en) * | 2005-02-08 | 2013-09-10 | The Trustees Of Columbia University In The City Of New York | In situ plating and etching of materials covered with a surface film |
US8496799B2 (en) * | 2005-02-08 | 2013-07-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for in situ annealing of electro- and electroless platings during deposition |
KR20080005947A (ko) * | 2005-04-08 | 2008-01-15 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 도금조 및 에칭조를 모니터링하기 위한 시스템 및 방법 |
JP4608613B2 (ja) * | 2005-04-22 | 2011-01-12 | 国立大学法人九州工業大学 | レーザー照射微細加工方法 |
WO2007027907A2 (en) * | 2005-09-02 | 2007-03-08 | The Trustees Of Columbia University In The City Of New York | A system and method for obtaining anisotropic etching of patterned substrates |
JP5030512B2 (ja) * | 2005-09-30 | 2012-09-19 | 日立ビアメカニクス株式会社 | レーザ加工方法 |
US20070256937A1 (en) * | 2006-05-04 | 2007-11-08 | International Business Machines Corporation | Apparatus and method for electrochemical processing of thin films on resistive substrates |
DE602007010941D1 (de) * | 2006-07-13 | 2011-01-13 | Bang & Olufsen As | Kombinierter elektrochemischer und laser-mikrobearbeitungsprozess zur erzeugung von ultradünnen flächen |
CN100388997C (zh) * | 2006-09-18 | 2008-05-21 | 南京航空航天大学 | 喷射液束电解-激光复合加工方法及其装置 |
WO2008070786A1 (en) * | 2006-12-06 | 2008-06-12 | The Trustees Of Columbia University In The City Of New York | Microfluidic systems and methods for screening plating and etching bath compositions |
WO2009124180A2 (en) * | 2008-04-02 | 2009-10-08 | The Trustees Of Columbia University In The City Of New York | In situ plating and soldering of materials covered with a surface film |
US8985050B2 (en) * | 2009-11-05 | 2015-03-24 | The Trustees Of Columbia University In The City Of New York | Substrate laser oxide removal process followed by electro or immersion plating |
US8444848B2 (en) * | 2010-02-01 | 2013-05-21 | Tokyo Electron Limited | Electrochemical substrate slicing using electromagnetic wave excitation |
CN101856753B (zh) * | 2010-04-27 | 2012-08-15 | 江苏大学 | 激光空泡空化的光电化学三维加工方法及装置 |
US9452495B1 (en) * | 2011-07-08 | 2016-09-27 | Sixpoint Materials, Inc. | Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer |
US8764515B2 (en) | 2012-05-14 | 2014-07-01 | United Technologies Corporation | Component machining method and assembly |
US9039887B2 (en) * | 2012-05-14 | 2015-05-26 | United Technologies Corporation | Component finishing method and assembly |
CN102785404B (zh) * | 2012-08-16 | 2015-04-08 | 东华大学 | 一种防明火绝热的多级复合织物、制备工艺及用途 |
JP6081218B2 (ja) * | 2013-02-20 | 2017-02-15 | 新日鉄住金マテリアルズ株式会社 | エッチング装置およびエッチング方法 |
DE102014017886A1 (de) * | 2014-12-04 | 2016-06-09 | Auto-Kabel Management Gmbh | Verfahren zum Herstellen eines elektrischen Anschlussteils |
CN109732199B (zh) * | 2019-02-25 | 2020-11-20 | 江苏大学 | 一种半导体材料激光电化学背向协同微加工方法及装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1193335B (de) * | 1954-08-25 | 1965-05-20 | Siemens Ag | Verfahren zum formgebenden und/oder trennenden Bearbeiten von fotoelektrisch wirksamen Halbleiterkristallen |
GB847927A (en) * | 1955-10-11 | 1960-09-14 | Philco Corp | A method and apparatus for the electrolytic treatment of semiconductive bodies |
US3013955A (en) * | 1959-04-29 | 1961-12-19 | Fairchild Camera Instr Co | Method of transistor manufacture |
US3072547A (en) * | 1960-07-11 | 1963-01-08 | Ibm | Pattern forming method and apparatus |
US3265599A (en) * | 1963-06-25 | 1966-08-09 | Litton Systems Inc | Formation of grain boundary photoorienter by electrolytic etching |
US3345275A (en) * | 1964-04-28 | 1967-10-03 | Westinghouse Electric Corp | Electrolyte and diffusion process |
US3345274A (en) * | 1964-04-22 | 1967-10-03 | Westinghouse Electric Corp | Method of making oxide film patterns |
US3529961A (en) * | 1966-12-27 | 1970-09-22 | Gen Electric | Formation of thin films of gold,nickel or copper by photolytic deposition |
US4161436A (en) * | 1967-03-06 | 1979-07-17 | Gordon Gould | Method of energizing a material |
US3935117A (en) * | 1970-08-25 | 1976-01-27 | Fuji Photo Film Co., Ltd. | Photosensitive etching composition |
US3706645A (en) * | 1971-09-30 | 1972-12-19 | Us Army | Process including photolytic enhancement for anodic dissolution of a gallium arsenide wafer |
US3810829A (en) * | 1972-06-28 | 1974-05-14 | Nasa | Scanning nozzle plating system |
LU71852A1 (es) * | 1975-02-14 | 1977-01-05 | ||
US4069121A (en) * | 1975-06-27 | 1978-01-17 | Thomson-Csf | Method for producing microscopic passages in a semiconductor body for electron-multiplication applications |
JPS5375472A (en) * | 1976-12-17 | 1978-07-04 | Hitachi Ltd | Method of producing thin film resistive ic |
-
1979
- 1979-05-08 US US06/037,074 patent/US4283259A/en not_active Expired - Lifetime
-
1980
- 1980-03-04 ZA ZA00801244A patent/ZA801244B/xx unknown
- 1980-03-06 JP JP2746580A patent/JPS55148771A/ja active Granted
- 1980-03-18 CA CA000347879A patent/CA1171381A/en not_active Expired
- 1980-03-27 EP EP80101628A patent/EP0019064B1/de not_active Expired
- 1980-03-27 DE DE8080101628T patent/DE3060691D1/de not_active Expired
- 1980-04-24 BR BR8002526A patent/BR8002526A/pt not_active IP Right Cessation
- 1980-05-07 ES ES491228A patent/ES491228A0/es active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3060691D1 (en) | 1982-09-16 |
JPS5641702B2 (es) | 1981-09-30 |
US4283259A (en) | 1981-08-11 |
EP0019064B1 (de) | 1982-07-28 |
ES8103206A1 (es) | 1981-02-16 |
CA1171381A (en) | 1984-07-24 |
JPS55148771A (en) | 1980-11-19 |
ZA801244B (en) | 1980-12-31 |
BR8002526A (pt) | 1980-12-30 |
EP0019064A1 (de) | 1980-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19971001 |