GB847927A - A method and apparatus for the electrolytic treatment of semiconductive bodies - Google Patents

A method and apparatus for the electrolytic treatment of semiconductive bodies

Info

Publication number
GB847927A
GB847927A GB30595/56A GB3059556A GB847927A GB 847927 A GB847927 A GB 847927A GB 30595/56 A GB30595/56 A GB 30595/56A GB 3059556 A GB3059556 A GB 3059556A GB 847927 A GB847927 A GB 847927A
Authority
GB
United Kingdom
Prior art keywords
electrolytic treatment
localized
oct
semi
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30595/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Publication of GB847927A publication Critical patent/GB847927A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials

Abstract

847,927. Localized electrolytic treatment of semi-conductors. PHILCO CORPORATION. Oct. 8, 1956 [Oct. 11, 1955], No. 30595/56. Drawings to Specification. Classes 37 and 41 A semi-conductive body is treated electrolytically by directing on to a selected area of said body radiation which will produce electronhole pairs in the irradiated area whereby the electrolytic action is modified in said area relatively to that in the remainder of the body. The radiation employed may be visible light, ultra-violet, or nuclear radiations and may be confined to one or more desired areas by masks or in the case of light by focusing a beam to a desired size of spot. The invention may be applied to the localized etching of N-type germanium with an acid ammonium sulphate solution and the localized plating of indium on P-type germanium from an indium sulphate solution containing ammonium chloride either by immersion of the germanium body in the electrolyte bath or by jet electrolytic treatment. Specification 824,484 is referred to. Reference has been directed by the Comptroller to Specification 805,291.
GB30595/56A 1955-10-11 1956-10-08 A method and apparatus for the electrolytic treatment of semiconductive bodies Expired GB847927A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US847927XA 1955-10-11 1955-10-11

Publications (1)

Publication Number Publication Date
GB847927A true GB847927A (en) 1960-09-14

Family

ID=22187228

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30595/56A Expired GB847927A (en) 1955-10-11 1956-10-08 A method and apparatus for the electrolytic treatment of semiconductive bodies

Country Status (2)

Country Link
FR (1) FR1161192A (en)
GB (1) GB847927A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3501342A (en) * 1965-01-27 1970-03-17 Texas Instruments Inc Semiconductors having selectively formed conductive or metallic portions and methods of making same
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
US4379022A (en) * 1979-05-08 1983-04-05 International Business Machines Corporation Method for maskless chemical machining
EP0131367A1 (en) * 1983-05-30 1985-01-16 Inoue-Japax Research Incorporated Method of and apparatus for machining ceramic materials
GB2188774A (en) * 1986-04-02 1987-10-07 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL266616A (en) * 1960-07-05
GB2106542B (en) * 1981-07-24 1985-10-09 Inoue Japax Res A method and apparatus for electrodeposition

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3501342A (en) * 1965-01-27 1970-03-17 Texas Instruments Inc Semiconductors having selectively formed conductive or metallic portions and methods of making same
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
US4379022A (en) * 1979-05-08 1983-04-05 International Business Machines Corporation Method for maskless chemical machining
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
EP0131367A1 (en) * 1983-05-30 1985-01-16 Inoue-Japax Research Incorporated Method of and apparatus for machining ceramic materials
US4559115A (en) * 1983-05-30 1985-12-17 Inoue-Japax Research Incorporated Method of and apparatus for machining ceramic materials
GB2188774A (en) * 1986-04-02 1987-10-07 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface

Also Published As

Publication number Publication date
FR1161192A (en) 1958-08-22

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