ES441530A1 - Un dispositivo semiconductor perfeccionado. - Google Patents
Un dispositivo semiconductor perfeccionado.Info
- Publication number
- ES441530A1 ES441530A1 ES441530A ES441530A ES441530A1 ES 441530 A1 ES441530 A1 ES 441530A1 ES 441530 A ES441530 A ES 441530A ES 441530 A ES441530 A ES 441530A ES 441530 A1 ES441530 A1 ES 441530A1
- Authority
- ES
- Spain
- Prior art keywords
- zones
- charge carriers
- charge
- semiconductor layer
- switchable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002800 charge carrier Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76841—Two-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7413207A NL7413207A (nl) | 1974-10-08 | 1974-10-08 | Halfgeleiderinrichting. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES441530A1 true ES441530A1 (es) | 1977-04-01 |
Family
ID=19822232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES441530A Expired ES441530A1 (es) | 1974-10-08 | 1975-10-06 | Un dispositivo semiconductor perfeccionado. |
Country Status (11)
Country | Link |
---|---|
US (1) | US4207477A (es) |
JP (1) | JPS5164379A (es) |
AU (1) | AU500915B2 (es) |
CA (1) | CA1059627A (es) |
CH (1) | CH595700A5 (es) |
DE (1) | DE2542698A1 (es) |
ES (1) | ES441530A1 (es) |
FR (1) | FR2287772A1 (es) |
GB (1) | GB1528946A (es) |
IT (1) | IT1043128B (es) |
NL (1) | NL7413207A (es) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8101883A (nl) * | 1981-04-16 | 1982-11-16 | Philips Nv | Ladingsgekoppelde inrichting. |
US4396438A (en) * | 1981-08-31 | 1983-08-02 | Rca Corporation | Method of making CCD imagers |
NL8104102A (nl) * | 1981-09-04 | 1983-04-05 | Philips Nv | Ladingsgekoppelde inrichting. |
DE3581793D1 (de) * | 1984-12-06 | 1991-03-28 | Toshiba Kawasaki Kk | Ladungsverschiebeanordnung. |
NL8500787A (nl) * | 1985-03-19 | 1986-10-16 | Philips Nv | Kleurentelevisie-ontvanger voorzien van een televisieschakeling voor het omzetten van een tijdmultiplexsignaal in simultane signalen en daarvoor geschikte, geintegreerde schakeling. |
GB8517081D0 (en) * | 1985-07-05 | 1985-08-14 | Gen Electric Co Plc | Image sensors |
US4992841A (en) * | 1987-06-25 | 1991-02-12 | The United States Of America As Represented By The Secretary Of The Air Force | Pseudo uniphase charge coupled device |
GB0330134D0 (en) * | 2003-12-30 | 2004-02-04 | Univ Liverpool | Charge coupled device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
DE2316612A1 (de) * | 1972-04-03 | 1973-10-18 | Hitachi Ltd | Ladungsuebertragungs-halbleitervorrichtungen |
NL181766C (nl) * | 1973-03-19 | 1987-10-16 | Philips Nv | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
NL7311600A (nl) * | 1973-08-23 | 1975-02-25 | Philips Nv | Ladingsgekoppelde inrichting. |
US3896474A (en) * | 1973-09-10 | 1975-07-22 | Fairchild Camera Instr Co | Charge coupled area imaging device with column anti-blooming control |
US3896485A (en) * | 1973-12-03 | 1975-07-22 | Fairchild Camera Instr Co | Charge-coupled device with overflow protection |
US3913077A (en) * | 1974-04-17 | 1975-10-14 | Hughes Aircraft Co | Serial-parallel-serial ccd memory with interlaced storage |
-
1974
- 1974-10-08 NL NL7413207A patent/NL7413207A/xx not_active Application Discontinuation
-
1975
- 1975-09-25 DE DE19752542698 patent/DE2542698A1/de not_active Withdrawn
- 1975-09-25 CA CA236,337A patent/CA1059627A/en not_active Expired
- 1975-10-03 IT IT27970/75A patent/IT1043128B/it active
- 1975-10-03 GB GB40572/75A patent/GB1528946A/en not_active Expired
- 1975-10-06 CH CH1295475A patent/CH595700A5/xx not_active IP Right Cessation
- 1975-10-06 ES ES441530A patent/ES441530A1/es not_active Expired
- 1975-10-07 AU AU85484/75A patent/AU500915B2/en not_active Expired
- 1975-10-08 FR FR7530804A patent/FR2287772A1/fr not_active Withdrawn
- 1975-10-08 JP JP50120833A patent/JPS5164379A/ja active Pending
-
1978
- 1978-06-07 US US05/913,444 patent/US4207477A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5164379A (es) | 1976-06-03 |
DE2542698A1 (de) | 1976-04-22 |
CH595700A5 (es) | 1978-02-28 |
AU8548475A (en) | 1977-04-21 |
AU500915B2 (en) | 1979-06-07 |
IT1043128B (it) | 1980-02-20 |
NL7413207A (nl) | 1976-04-12 |
FR2287772A1 (fr) | 1976-05-07 |
CA1059627A (en) | 1979-07-31 |
US4207477A (en) | 1980-06-10 |
GB1528946A (en) | 1978-10-18 |
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