ES377825A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES377825A1
ES377825A1 ES377825A ES377825A ES377825A1 ES 377825 A1 ES377825 A1 ES 377825A1 ES 377825 A ES377825 A ES 377825A ES 377825 A ES377825 A ES 377825A ES 377825 A1 ES377825 A1 ES 377825A1
Authority
ES
Spain
Prior art keywords
zone
additional
contact layer
type
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES377825A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES377825A1 publication Critical patent/ES377825A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
ES377825A 1969-03-25 1970-03-23 Un dispositivo semiconductor. Expired ES377825A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6904543A NL6904543A (de) 1969-03-25 1969-03-25

Publications (1)

Publication Number Publication Date
ES377825A1 true ES377825A1 (es) 1972-05-16

Family

ID=19806513

Family Applications (1)

Application Number Title Priority Date Filing Date
ES377825A Expired ES377825A1 (es) 1969-03-25 1970-03-23 Un dispositivo semiconductor.

Country Status (9)

Country Link
BE (1) BE747892A (de)
BR (1) BR7017682D0 (de)
CH (1) CH504102A (de)
DE (1) DE2012945C3 (de)
ES (1) ES377825A1 (de)
FR (1) FR2037251B1 (de)
GB (1) GB1300726A (de)
NL (1) NL6904543A (de)
SE (1) SE349425B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (de) * 1970-10-05 1974-10-31 Radiotechnique Compelec
JPS573225B2 (de) * 1974-08-19 1982-01-20
IN144541B (de) * 1975-06-11 1978-05-13 Rca Corp
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
US5345101A (en) * 1993-06-28 1994-09-06 Motorola, Inc. High voltage semiconductor structure and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
FR1337348A (fr) * 1961-09-08 1963-09-13 Pacific Semiconductors Transistors de couplage
NL282779A (de) * 1961-09-08
FR1417163A (fr) * 1963-08-27 1965-11-12 Ibm Dispositifs semi-conducteurs et leur fabrication
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
FR1459892A (fr) * 1964-08-20 1966-06-17 Texas Instruments Inc Dispositifs semi-conducteurs
DE1273700B (de) * 1965-04-07 1968-07-25 Itt Ind Ges Mit Beschraenkter Halbleiterbauelement
FR1475201A (fr) * 1965-04-07 1967-03-31 Itt Dispositif plan à semi-conducteurs
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Also Published As

Publication number Publication date
FR2037251A1 (de) 1970-12-31
DE2012945B2 (de) 1977-12-29
FR2037251B1 (de) 1974-09-20
GB1300726A (en) 1972-12-20
DE2012945A1 (de) 1970-10-08
BE747892A (fr) 1970-09-24
BR7017682D0 (pt) 1973-04-17
CH504102A (de) 1971-02-28
NL6904543A (de) 1970-09-29
SE349425B (de) 1972-09-25
DE2012945C3 (de) 1985-01-31

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