ES350147A1 - Un dispositivo de efecto gunn. - Google Patents
Un dispositivo de efecto gunn.Info
- Publication number
- ES350147A1 ES350147A1 ES350147A ES350147A ES350147A1 ES 350147 A1 ES350147 A1 ES 350147A1 ES 350147 A ES350147 A ES 350147A ES 350147 A ES350147 A ES 350147A ES 350147 A1 ES350147 A1 ES 350147A1
- Authority
- ES
- Spain
- Prior art keywords
- germanium
- indium
- layer
- contact
- jagged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5718/67A GB1224171A (en) | 1967-02-07 | 1967-02-07 | Improvements in and relating to gunn-effect devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES350147A1 true ES350147A1 (es) | 1969-04-16 |
Family
ID=9801332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES350147A Expired ES350147A1 (es) | 1967-02-07 | 1968-02-05 | Un dispositivo de efecto gunn. |
Country Status (11)
Country | Link |
---|---|
AT (1) | AT291341B (es) |
BE (1) | BE710355A (es) |
CA (1) | CA943643A (es) |
CH (1) | CH480759A (es) |
DE (1) | DE1616292C3 (es) |
DK (1) | DK119120B (es) |
ES (1) | ES350147A1 (es) |
FR (1) | FR1554237A (es) |
GB (1) | GB1224171A (es) |
NL (1) | NL6801581A (es) |
SE (1) | SE345554B (es) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7013226A (es) * | 1970-09-08 | 1972-03-10 | Philips Nv | |
CN101720490B (zh) * | 2007-06-29 | 2013-10-23 | 皇家飞利浦电子股份有限公司 | 用于碲化镉部件的电触点 |
-
1967
- 1967-02-07 GB GB5718/67A patent/GB1224171A/en not_active Expired
-
1968
- 1968-02-02 DK DK42268AA patent/DK119120B/da unknown
- 1968-02-03 NL NL6801581A patent/NL6801581A/xx unknown
- 1968-02-05 SE SE1481/68A patent/SE345554B/xx unknown
- 1968-02-05 CH CH165868A patent/CH480759A/de not_active IP Right Cessation
- 1968-02-05 ES ES350147A patent/ES350147A1/es not_active Expired
- 1968-02-05 BE BE710355D patent/BE710355A/xx not_active Expired
- 1968-02-05 CA CA011,556A patent/CA943643A/en not_active Expired
- 1968-02-06 DE DE1616292A patent/DE1616292C3/de not_active Expired
- 1968-02-07 AT AT115268A patent/AT291341B/de not_active IP Right Cessation
- 1968-02-07 FR FR1554237D patent/FR1554237A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1224171A (en) | 1971-03-03 |
DK119120B (da) | 1970-11-16 |
NL6801581A (es) | 1968-08-08 |
AT291341B (de) | 1971-07-12 |
SE345554B (es) | 1972-05-29 |
FR1554237A (es) | 1969-01-17 |
DE1616292B2 (de) | 1977-12-15 |
DE1616292A1 (de) | 1971-03-18 |
BE710355A (es) | 1968-08-05 |
DE1616292C3 (de) | 1978-08-17 |
CH480759A (de) | 1969-10-31 |
CA943643A (en) | 1974-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1099381A (en) | Solid state field-effect devices | |
GB935710A (en) | Improvements in controlled semiconductor rectifiers | |
GB1173575A (en) | Controllable Schottky Diode. | |
ES350147A1 (es) | Un dispositivo de efecto gunn. | |
GB1234294A (es) | ||
GB1062725A (en) | Improvements in or relating to lasers | |
US3693054A (en) | Semiconductor having a transistor, a thyristor and a diode in one body | |
GB1110281A (en) | Semiconductor junction device for generating optical radiation | |
GB1088637A (en) | Four layer semiconductor switching devices having a shorted emitter | |
GB1433017A (en) | Electroluminescent semiconductor arrangement for generating ultra violet radiation | |
GB708899A (en) | Improvements in or relating to electric rectifying devices employing semiconductors | |
GB1199815A (en) | High-Frequency Power Diode | |
GB1412879A (en) | Shcottky barrier semiconductor device | |
GB902425A (en) | Improvements in asymmetrically conductive device | |
GB1142095A (en) | Method for producing gallium arsenide devices | |
GB945736A (en) | Improvements relating to semiconductor circuits | |
GB1232837A (es) | ||
GB1252565A (es) | ||
GB1256126A (en) | Pressure sensitive semiconductor device | |
JPS53119690A (en) | Semiconductor device | |
GB1045389A (en) | Improvements in or relating to semi-conductor junction devices | |
GB1303812A (es) | ||
GB1116363A (en) | Semiconductor devices | |
GB1139495A (en) | Schottky barrier semi-conductor devices | |
GB948682A (en) | Semiconductor devices |