GB1224171A - Improvements in and relating to gunn-effect devices - Google Patents
Improvements in and relating to gunn-effect devicesInfo
- Publication number
- GB1224171A GB1224171A GB5718/67A GB571867A GB1224171A GB 1224171 A GB1224171 A GB 1224171A GB 5718/67 A GB5718/67 A GB 5718/67A GB 571867 A GB571867 A GB 571867A GB 1224171 A GB1224171 A GB 1224171A
- Authority
- GB
- United Kingdom
- Prior art keywords
- germanium
- indium
- gunn
- layer
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Abstract
1,224,171. Gunn effect devices. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 5 Feb., 1968 [7 Feb., 1967], No. 5718/67. Addition to 1,161,782. Heading HlK. A voltage tunable planar Gunn-effect device has ohmic cathode and anode contacts disposed on or adjacent one face of a laminar semiconductor body or layer, the relative disposition and shape of the electrodes being such that the field between them in the quiescent state is non- uniform. A preferred device comprises a 0 ohm. cm. GaAs layer 3Á thick epitaxially deposited on a 30Á semi-insulating GaAs plate with concentric circular and annular contacts disposed in etched cavities extending into the layer or through it to the substrate, the inner contact being 10Á in diameter and the internal diameter of the annular contact being 40Á. The contacts may consist of tin, or a gold-tin, silvergold-germanium, gold-indium-germanium or silver-indium-germanium alloy or of a goldgermanium alloy coated with nickel. In other embodiments the inner edge of one contact is jagged or arcuate while the other may be straight, arcuate or jagged. Indium phosphide and cadmium telluride may be used instead of gallium arsenide. Reference has been directed by the Comptroller to Specification, 1,170,984.
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5718/67A GB1224171A (en) | 1967-02-07 | 1967-02-07 | Improvements in and relating to gunn-effect devices |
DK42268AA DK119120B (en) | 1967-02-07 | 1968-02-02 | Gunn effect component. |
NL6801581A NL6801581A (en) | 1967-02-07 | 1968-02-03 | |
SE1481/68A SE345554B (en) | 1967-02-07 | 1968-02-05 | |
ES350147A ES350147A1 (en) | 1967-02-07 | 1968-02-05 | Improvements in and relating to gunn-effect devices |
CA011,556A CA943643A (en) | 1967-02-07 | 1968-02-05 | Voltage controlled variable frequency gunn-effect device |
BE710355D BE710355A (en) | 1967-02-07 | 1968-02-05 | |
CH165868A CH480759A (en) | 1967-02-07 | 1968-02-05 | Gunn effect device |
DE1616292A DE1616292C3 (en) | 1967-02-07 | 1968-02-06 | Gunneffect component |
AT115268A AT291341B (en) | 1967-02-07 | 1968-02-07 | Gunn effect device |
FR1554237D FR1554237A (en) | 1967-02-07 | 1968-02-07 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5718/67A GB1224171A (en) | 1967-02-07 | 1967-02-07 | Improvements in and relating to gunn-effect devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1224171A true GB1224171A (en) | 1971-03-03 |
Family
ID=9801332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5718/67A Expired GB1224171A (en) | 1967-02-07 | 1967-02-07 | Improvements in and relating to gunn-effect devices |
Country Status (11)
Country | Link |
---|---|
AT (1) | AT291341B (en) |
BE (1) | BE710355A (en) |
CA (1) | CA943643A (en) |
CH (1) | CH480759A (en) |
DE (1) | DE1616292C3 (en) |
DK (1) | DK119120B (en) |
ES (1) | ES350147A1 (en) |
FR (1) | FR1554237A (en) |
GB (1) | GB1224171A (en) |
NL (1) | NL6801581A (en) |
SE (1) | SE345554B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009004522A1 (en) * | 2007-06-29 | 2009-01-08 | Koninklijke Philips Electronics N.V. | Electrical contact for a cadmium tellurium component |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7013226A (en) * | 1970-09-08 | 1972-03-10 | Philips Nv |
-
1967
- 1967-02-07 GB GB5718/67A patent/GB1224171A/en not_active Expired
-
1968
- 1968-02-02 DK DK42268AA patent/DK119120B/en unknown
- 1968-02-03 NL NL6801581A patent/NL6801581A/xx unknown
- 1968-02-05 CA CA011,556A patent/CA943643A/en not_active Expired
- 1968-02-05 ES ES350147A patent/ES350147A1/en not_active Expired
- 1968-02-05 CH CH165868A patent/CH480759A/en not_active IP Right Cessation
- 1968-02-05 BE BE710355D patent/BE710355A/xx not_active Expired
- 1968-02-05 SE SE1481/68A patent/SE345554B/xx unknown
- 1968-02-06 DE DE1616292A patent/DE1616292C3/en not_active Expired
- 1968-02-07 AT AT115268A patent/AT291341B/en not_active IP Right Cessation
- 1968-02-07 FR FR1554237D patent/FR1554237A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009004522A1 (en) * | 2007-06-29 | 2009-01-08 | Koninklijke Philips Electronics N.V. | Electrical contact for a cadmium tellurium component |
US8847386B2 (en) | 2007-06-29 | 2014-09-30 | Koninklijke Philips N.V. | Electrical contact for a cadmium tellurium component |
Also Published As
Publication number | Publication date |
---|---|
BE710355A (en) | 1968-08-05 |
NL6801581A (en) | 1968-08-08 |
AT291341B (en) | 1971-07-12 |
ES350147A1 (en) | 1969-04-16 |
CA943643A (en) | 1974-03-12 |
DE1616292B2 (en) | 1977-12-15 |
CH480759A (en) | 1969-10-31 |
FR1554237A (en) | 1969-01-17 |
DE1616292A1 (en) | 1971-03-18 |
SE345554B (en) | 1972-05-29 |
DK119120B (en) | 1970-11-16 |
DE1616292C3 (en) | 1978-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1099381A (en) | Solid state field-effect devices | |
GB1337283A (en) | Method of manufacturing a semiconductor device | |
GB1060208A (en) | Avalanche transistor | |
GB1173575A (en) | Controllable Schottky Diode. | |
GB1224171A (en) | Improvements in and relating to gunn-effect devices | |
GB1062725A (en) | Improvements in or relating to lasers | |
GB1160381A (en) | Improvements relating to Semiconductors and Methods of making Semiconductors. | |
GB1088637A (en) | Four layer semiconductor switching devices having a shorted emitter | |
GB1433017A (en) | Electroluminescent semiconductor arrangement for generating ultra violet radiation | |
GB1357650A (en) | Methods of manufacturing semiconductor devices | |
GB1439759A (en) | Semiconductor devices | |
GB1412879A (en) | Shcottky barrier semiconductor device | |
GB1286674A (en) | Transferred electron devices | |
GB902425A (en) | Improvements in asymmetrically conductive device | |
GB1021147A (en) | Divided base four-layer semiconductor device | |
GB1232837A (en) | ||
GB1529853A (en) | Transferred electron devices | |
GB1303660A (en) | ||
GB1197315A (en) | Semiconductor Device | |
GB1045389A (en) | Improvements in or relating to semi-conductor junction devices | |
GB1208030A (en) | A semiconductor device | |
ES360564A1 (en) | Titanium-silicon rectifying junction | |
GB916379A (en) | Improvements in and relating to semiconductor junction units | |
GB986922A (en) | Improvements relating to microwave diode | |
GB1514976A (en) | Hyperfrequency device with gunn effect |