ES360564A1 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES360564A1 ES360564A1 ES360564A ES360564A ES360564A1 ES 360564 A1 ES360564 A1 ES 360564A1 ES 360564 A ES360564 A ES 360564A ES 360564 A ES360564 A ES 360564A ES 360564 A1 ES360564 A1 ES 360564A1
- Authority
- ES
- Spain
- Prior art keywords
- titanium
- electrode
- silicon
- oxide
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68698467A | 1967-11-30 | 1967-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES360564A1 true ES360564A1 (es) | 1970-10-16 |
Family
ID=24758553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES360564A Expired ES360564A1 (es) | 1967-11-30 | 1968-11-22 | Un dispositivo semiconductor. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3621344A (es) |
DE (1) | DE1811618A1 (es) |
ES (1) | ES360564A1 (es) |
FR (1) | FR1593382A (es) |
GB (1) | GB1222594A (es) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2058385A1 (en) * | 1969-08-20 | 1971-05-28 | Ibm | Diode with schottky barrier |
US3858231A (en) * | 1973-04-16 | 1974-12-31 | Ibm | Dielectrically isolated schottky barrier structure and method of forming the same |
US20070218665A1 (en) * | 2006-03-15 | 2007-09-20 | Marvell International Ltd. | Cross-point memory array |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2713133A (en) * | 1952-06-05 | 1955-07-12 | Philco Corp | Germanium diode and method for the fabrication thereof |
NL134170C (es) * | 1963-12-17 | 1900-01-01 | ||
US3290127A (en) * | 1964-03-30 | 1966-12-06 | Bell Telephone Labor Inc | Barrier diode with metal contact and method of making |
US3333324A (en) * | 1964-09-28 | 1967-08-01 | Rca Corp | Method of manufacturing semiconductor devices |
US3463975A (en) * | 1964-12-31 | 1969-08-26 | Texas Instruments Inc | Unitary semiconductor high speed switching device utilizing a barrier diode |
US3451912A (en) * | 1966-07-15 | 1969-06-24 | Ibm | Schottky-barrier diode formed by sputter-deposition processes |
US3476984A (en) * | 1966-11-10 | 1969-11-04 | Solitron Devices | Schottky barrier semiconductor device |
-
1967
- 1967-11-30 US US686984A patent/US3621344A/en not_active Expired - Lifetime
-
1968
- 1968-11-13 GB GB53865/68A patent/GB1222594A/en not_active Expired
- 1968-11-22 ES ES360564A patent/ES360564A1/es not_active Expired
- 1968-11-26 FR FR1593382D patent/FR1593382A/fr not_active Expired
- 1968-11-29 DE DE19681811618 patent/DE1811618A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1222594A (en) | 1971-02-17 |
US3621344A (en) | 1971-11-16 |
DE1811618A1 (de) | 1969-08-14 |
FR1593382A (es) | 1970-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1028782A (en) | Semiconductor light-producing device | |
GB1153428A (en) | Improvements in Semiconductor Devices. | |
GB1105177A (en) | Improvements in semiconductor devices | |
GB1451054A (en) | Schottky barrier diodes | |
GB1229776A (es) | ||
ES364658A1 (es) | Un dispositivo semiconductor. | |
GB1337283A (en) | Method of manufacturing a semiconductor device | |
GB1060208A (en) | Avalanche transistor | |
ES360564A1 (es) | Un dispositivo semiconductor. | |
GB949646A (en) | Improvements in or relating to semiconductor devices | |
GB1303235A (es) | ||
GB1215539A (en) | Hybrid junction semiconductor device and method of making the same | |
GB1160381A (en) | Improvements relating to Semiconductors and Methods of making Semiconductors. | |
GB1228819A (es) | ||
GB1412879A (en) | Shcottky barrier semiconductor device | |
GB1270498A (en) | Semiconductor devices | |
GB1079309A (en) | Semiconductor rectifiers | |
GB1141980A (en) | Negative resistance device | |
GB1110321A (en) | Improvements in or relating to semiconductor devices | |
GB1335037A (en) | Field effect transistor | |
GB1048424A (en) | Improvements in or relating to semiconductor devices | |
GB1358275A (en) | Semiconductor devices | |
GB1138799A (en) | Avalanche transistor employing depletion layer contour control | |
GB1229385A (es) | ||
GB1045429A (en) | Transistors |