ES360564A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES360564A1
ES360564A1 ES360564A ES360564A ES360564A1 ES 360564 A1 ES360564 A1 ES 360564A1 ES 360564 A ES360564 A ES 360564A ES 360564 A ES360564 A ES 360564A ES 360564 A1 ES360564 A1 ES 360564A1
Authority
ES
Spain
Prior art keywords
titanium
electrode
silicon
oxide
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES360564A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of ES360564A1 publication Critical patent/ES360564A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
ES360564A 1967-11-30 1968-11-22 Un dispositivo semiconductor. Expired ES360564A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68698467A 1967-11-30 1967-11-30

Publications (1)

Publication Number Publication Date
ES360564A1 true ES360564A1 (es) 1970-10-16

Family

ID=24758553

Family Applications (1)

Application Number Title Priority Date Filing Date
ES360564A Expired ES360564A1 (es) 1967-11-30 1968-11-22 Un dispositivo semiconductor.

Country Status (5)

Country Link
US (1) US3621344A (es)
DE (1) DE1811618A1 (es)
ES (1) ES360564A1 (es)
FR (1) FR1593382A (es)
GB (1) GB1222594A (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2058385A1 (en) * 1969-08-20 1971-05-28 Ibm Diode with schottky barrier
US3858231A (en) * 1973-04-16 1974-12-31 Ibm Dielectrically isolated schottky barrier structure and method of forming the same
US20070218665A1 (en) * 2006-03-15 2007-09-20 Marvell International Ltd. Cross-point memory array

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2713133A (en) * 1952-06-05 1955-07-12 Philco Corp Germanium diode and method for the fabrication thereof
NL134170C (es) * 1963-12-17 1900-01-01
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making
US3333324A (en) * 1964-09-28 1967-08-01 Rca Corp Method of manufacturing semiconductor devices
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3451912A (en) * 1966-07-15 1969-06-24 Ibm Schottky-barrier diode formed by sputter-deposition processes
US3476984A (en) * 1966-11-10 1969-11-04 Solitron Devices Schottky barrier semiconductor device

Also Published As

Publication number Publication date
GB1222594A (en) 1971-02-17
US3621344A (en) 1971-11-16
DE1811618A1 (de) 1969-08-14
FR1593382A (es) 1970-05-25

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