ES340625A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES340625A1
ES340625A1 ES340625A ES340625A ES340625A1 ES 340625 A1 ES340625 A1 ES 340625A1 ES 340625 A ES340625 A ES 340625A ES 340625 A ES340625 A ES 340625A ES 340625 A1 ES340625 A1 ES 340625A1
Authority
ES
Spain
Prior art keywords
strip
type
strips
group
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES340625A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES340625A1 publication Critical patent/ES340625A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Pallets (AREA)
ES340625A 1966-05-19 1967-05-17 Un dispositivo semiconductor. Expired ES340625A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6606912A NL6606912A (en:Method) 1966-05-19 1966-05-19

Publications (1)

Publication Number Publication Date
ES340625A1 true ES340625A1 (es) 1968-06-01

Family

ID=19796650

Family Applications (1)

Application Number Title Priority Date Filing Date
ES340625A Expired ES340625A1 (es) 1966-05-19 1967-05-17 Un dispositivo semiconductor.

Country Status (11)

Country Link
US (1) US3525020A (en:Method)
AT (1) AT272409B (en:Method)
BE (1) BE698654A (en:Method)
CH (1) CH472785A (en:Method)
DE (1) DE1614250C3 (en:Method)
DK (1) DK117512B (en:Method)
ES (1) ES340625A1 (en:Method)
GB (1) GB1182325A (en:Method)
NL (1) NL6606912A (en:Method)
NO (1) NO120537B (en:Method)
SE (1) SE334677B (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700961A (en) * 1971-08-19 1972-10-24 Nasa Phototransistor imaging system
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
US4412308A (en) * 1981-06-15 1983-10-25 International Business Machines Corporation Programmable bipolar structures
GB2215124A (en) * 1988-02-16 1989-09-13 Stc Plc Integrated circuit underpasses
DE19852072C2 (de) * 1998-11-11 2001-10-18 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer stückweise im Substrat verlaufenden Verdrahtung
US20070159753A1 (en) * 2006-01-09 2007-07-12 Randall Michael S System for EMI/RFI filtering and transient voltage suppression

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212613A (en) * 1962-07-06 1965-10-19 Sundstrand Corp Thermal disconnect
NL294168A (en:Method) * 1963-06-17
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3312871A (en) * 1964-12-23 1967-04-04 Ibm Interconnection arrangement for integrated circuits
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3402330A (en) * 1966-05-16 1968-09-17 Honeywell Inc Semiconductor integrated circuit apparatus

Also Published As

Publication number Publication date
DK117512B (da) 1970-05-04
NL6606912A (en:Method) 1967-11-20
AT272409B (de) 1969-07-10
SE334677B (en:Method) 1971-05-03
CH472785A (de) 1969-05-15
DE1614250B2 (de) 1977-11-24
BE698654A (en:Method) 1967-11-20
DE1614250C3 (de) 1983-01-05
US3525020A (en) 1970-08-18
GB1182325A (en) 1970-02-25
DE1614250A1 (de) 1970-08-13
NO120537B (en:Method) 1970-11-02

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