ES301020A1 - Dispositivo semiconductor compuesto - Google Patents

Dispositivo semiconductor compuesto

Info

Publication number
ES301020A1
ES301020A1 ES0301020A ES301020A ES301020A1 ES 301020 A1 ES301020 A1 ES 301020A1 ES 0301020 A ES0301020 A ES 0301020A ES 301020 A ES301020 A ES 301020A ES 301020 A1 ES301020 A1 ES 301020A1
Authority
ES
Spain
Prior art keywords
layer
conductors
regions
windows
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0301020A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES301020A1 publication Critical patent/ES301020A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
ES0301020A 1963-06-17 1964-06-15 Dispositivo semiconductor compuesto Expired ES301020A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL63294168A NL141332B (nl) 1963-06-17 1963-06-17 Geintegreerde halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke inrichting.

Publications (1)

Publication Number Publication Date
ES301020A1 true ES301020A1 (es) 1964-12-01

Family

ID=19754786

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0301020A Expired ES301020A1 (es) 1963-06-17 1964-06-15 Dispositivo semiconductor compuesto

Country Status (10)

Country Link
US (1) US3295031A (es)
JP (1) JPS5323671B1 (es)
AT (1) AT251650B (es)
BE (1) BE649299A (es)
CH (1) CH434507A (es)
DE (1) DE1284519B (es)
DK (1) DK117647B (es)
ES (1) ES301020A1 (es)
GB (1) GB1069755A (es)
NL (2) NL141332B (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368113A (en) * 1965-06-28 1968-02-06 Westinghouse Electric Corp Integrated circuit structures, and method of making same, including a dielectric medium for internal isolation
GB1119357A (en) * 1965-10-07 1968-07-10 Ibm A data store
US3449728A (en) * 1966-01-28 1969-06-10 Ibm Feedback current switch memory element
US3731375A (en) * 1966-03-31 1973-05-08 Ibm Monolithic integrated structure including fabrication and packaging therefor
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
NL152118B (nl) * 1966-05-19 1977-01-17 Philips Nv Halfgeleider-leesgeheugenmatrix.
NL6606912A (es) * 1966-05-19 1967-11-20
US3541531A (en) * 1967-02-07 1970-11-17 Bell Telephone Labor Inc Semiconductive memory array wherein operating power is supplied via information paths
GB1127270A (en) * 1967-09-05 1968-09-18 Ibm Data storage cell
US3533087A (en) * 1967-09-15 1970-10-06 Rca Corp Memory employing transistor storage cells
GB1308711A (en) * 1969-03-13 1973-03-07 Energy Conversion Devices Inc Combination switch units and integrated circuits
US3614750A (en) * 1969-07-15 1971-10-19 Ncr Co Read-only memory circuit
US3638202A (en) * 1970-03-19 1972-01-25 Bell Telephone Labor Inc Access circuit arrangement for equalized loading in integrated circuit arrays
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
US3818252A (en) * 1971-12-20 1974-06-18 Hitachi Ltd Universal logical integrated circuit
US4521799A (en) * 1982-12-27 1985-06-04 Motorola, Inc. Crossunder within an active device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3100276A (en) * 1960-04-18 1963-08-06 Owen L Meyer Semiconductor solid circuits
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3210620A (en) * 1961-10-04 1965-10-05 Westinghouse Electric Corp Semiconductor device providing diode functions
US3210677A (en) * 1962-05-28 1965-10-05 Westinghouse Electric Corp Unipolar-bipolar semiconductor amplifier

Also Published As

Publication number Publication date
US3295031A (en) 1966-12-27
DK117647B (da) 1970-05-19
DE1284519B (de) 1968-12-05
CH434507A (de) 1967-04-30
AT251650B (de) 1967-01-10
NL141332B (nl) 1974-02-15
GB1069755A (en) 1967-05-24
NL294168A (es)
BE649299A (es) 1964-12-15
JPS5323671B1 (es) 1978-07-15

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