ES315030A1 - Un dispositivo semiconductor de efecto de campo de portal aislado. - Google Patents

Un dispositivo semiconductor de efecto de campo de portal aislado.

Info

Publication number
ES315030A1
ES315030A1 ES0315030A ES315030A ES315030A1 ES 315030 A1 ES315030 A1 ES 315030A1 ES 0315030 A ES0315030 A ES 0315030A ES 315030 A ES315030 A ES 315030A ES 315030 A1 ES315030 A1 ES 315030A1
Authority
ES
Spain
Prior art keywords
regions
semiconductor device
field effect
effect semiconductor
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0315030A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES315030A1 publication Critical patent/ES315030A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
ES0315030A 1964-07-09 1965-07-07 Un dispositivo semiconductor de efecto de campo de portal aislado. Expired ES315030A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US381501A US3334281A (en) 1964-07-09 1964-07-09 Stabilizing coatings for semiconductor devices

Publications (1)

Publication Number Publication Date
ES315030A1 true ES315030A1 (es) 1966-02-01

Family

ID=23505280

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0315030A Expired ES315030A1 (es) 1964-07-09 1965-07-07 Un dispositivo semiconductor de efecto de campo de portal aislado.

Country Status (7)

Country Link
US (2) US3334281A (enExample)
BR (1) BR6571096D0 (enExample)
DE (1) DE1514359B1 (enExample)
ES (1) ES315030A1 (enExample)
GB (1) GB1079168A (enExample)
NL (1) NL146333B (enExample)
SE (1) SE322843B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400308A (en) * 1965-06-22 1968-09-03 Rca Corp Metallic contacts for semiconductor devices
US3440496A (en) * 1965-07-20 1969-04-22 Hughes Aircraft Co Surface-protected semiconductor devices and methods of manufacturing
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
GB1187611A (en) * 1966-03-23 1970-04-08 Matsushita Electronics Corp Method of manufacturing Semiconductors Device
US3465209A (en) * 1966-07-07 1969-09-02 Rca Corp Semiconductor devices and methods of manufacture thereof
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same
JPS4817792B1 (enExample) * 1967-03-29 1973-05-31
GB1190893A (en) * 1967-05-04 1970-05-06 Hitachi Ltd A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
US3544864A (en) * 1967-08-31 1970-12-01 Gen Telephone & Elect Solid state field effect device
US3512057A (en) * 1968-03-21 1970-05-12 Teledyne Systems Corp Semiconductor device with barrier impervious to fast ions and method of making
US3560810A (en) * 1968-08-15 1971-02-02 Ibm Field effect transistor having passivated gate insulator
US3923562A (en) * 1968-10-07 1975-12-02 Ibm Process for producing monolithic circuits
US3657030A (en) * 1970-07-31 1972-04-18 Bell Telephone Labor Inc Technique for masking silicon nitride during phosphoric acid etching
FR2388410A1 (fr) * 1977-04-20 1978-11-17 Thomson Csf Procede de realisation de transistors a effet de champ de type mos, et transistors realises selon un tel procede

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265382A (enExample) * 1960-03-08
NL267831A (enExample) * 1960-08-17
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
BE636317A (enExample) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
DE1514359B1 (de) 1970-09-24
NL146333B (nl) 1975-06-16
NL6508795A (enExample) 1966-01-10
BR6571096D0 (pt) 1973-05-15
GB1079168A (en) 1967-08-16
SE322843B (enExample) 1970-04-20
USB381501I5 (enExample)
US3334281A (en) 1967-08-01

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