BR6571096D0 - Dispositivos semicondutores - Google Patents

Dispositivos semicondutores

Info

Publication number
BR6571096D0
BR6571096D0 BR171096/65A BR17109665A BR6571096D0 BR 6571096 D0 BR6571096 D0 BR 6571096D0 BR 171096/65 A BR171096/65 A BR 171096/65A BR 17109665 A BR17109665 A BR 17109665A BR 6571096 D0 BR6571096 D0 BR 6571096D0
Authority
BR
Brazil
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Application number
BR171096/65A
Other languages
English (en)
Portuguese (pt)
Inventor
N Ditrick
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BR6571096D0 publication Critical patent/BR6571096D0/pt

Links

Classifications

    • H10P14/6923—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6334—
    • H10P14/6506—
    • H10P14/6548—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
BR171096/65A 1964-07-09 1965-07-08 Dispositivos semicondutores BR6571096D0 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US381501A US3334281A (en) 1964-07-09 1964-07-09 Stabilizing coatings for semiconductor devices

Publications (1)

Publication Number Publication Date
BR6571096D0 true BR6571096D0 (pt) 1973-05-15

Family

ID=23505280

Family Applications (1)

Application Number Title Priority Date Filing Date
BR171096/65A BR6571096D0 (pt) 1964-07-09 1965-07-08 Dispositivos semicondutores

Country Status (7)

Country Link
US (2) US3334281A (enExample)
BR (1) BR6571096D0 (enExample)
DE (1) DE1514359B1 (enExample)
ES (1) ES315030A1 (enExample)
GB (1) GB1079168A (enExample)
NL (1) NL146333B (enExample)
SE (1) SE322843B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400308A (en) * 1965-06-22 1968-09-03 Rca Corp Metallic contacts for semiconductor devices
US3440496A (en) * 1965-07-20 1969-04-22 Hughes Aircraft Co Surface-protected semiconductor devices and methods of manufacturing
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
GB1187611A (en) * 1966-03-23 1970-04-08 Matsushita Electronics Corp Method of manufacturing Semiconductors Device
US3465209A (en) * 1966-07-07 1969-09-02 Rca Corp Semiconductor devices and methods of manufacture thereof
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same
JPS4817792B1 (enExample) * 1967-03-29 1973-05-31
GB1190893A (en) * 1967-05-04 1970-05-06 Hitachi Ltd A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
US3544864A (en) * 1967-08-31 1970-12-01 Gen Telephone & Elect Solid state field effect device
US3512057A (en) * 1968-03-21 1970-05-12 Teledyne Systems Corp Semiconductor device with barrier impervious to fast ions and method of making
US3560810A (en) * 1968-08-15 1971-02-02 Ibm Field effect transistor having passivated gate insulator
US3923562A (en) * 1968-10-07 1975-12-02 Ibm Process for producing monolithic circuits
US3657030A (en) * 1970-07-31 1972-04-18 Bell Telephone Labor Inc Technique for masking silicon nitride during phosphoric acid etching
FR2388410A1 (fr) * 1977-04-20 1978-11-17 Thomson Csf Procede de realisation de transistors a effet de champ de type mos, et transistors realises selon un tel procede

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265382A (enExample) * 1960-03-08
NL267831A (enExample) * 1960-08-17
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
BE636316A (enExample) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
GB1079168A (en) 1967-08-16
SE322843B (enExample) 1970-04-20
NL6508795A (enExample) 1966-01-10
USB381501I5 (enExample)
DE1514359B1 (de) 1970-09-24
NL146333B (nl) 1975-06-16
ES315030A1 (es) 1966-02-01
US3334281A (en) 1967-08-01

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