ES2905416T3 - Celda estándar de alto rendimiento - Google Patents

Celda estándar de alto rendimiento Download PDF

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Publication number
ES2905416T3
ES2905416T3 ES15707848T ES15707848T ES2905416T3 ES 2905416 T3 ES2905416 T3 ES 2905416T3 ES 15707848 T ES15707848 T ES 15707848T ES 15707848 T ES15707848 T ES 15707848T ES 2905416 T3 ES2905416 T3 ES 2905416T3
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ES
Spain
Prior art keywords
cell
region
continuous
gate
taut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES15707848T
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English (en)
Spanish (es)
Inventor
Xiangdong Chen
Ohsang Kwon
Foua Vang
Animesh Datta
Seid Hadi Rasouli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
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Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Application granted granted Critical
Publication of ES2905416T3 publication Critical patent/ES2905416T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/909—Microarchitecture
    • H10D84/929—Isolations
    • H10D84/931—FET isolation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/909—Microarchitecture
    • H10D84/959—Connectability characteristics, i.e. diffusion and polysilicon geometries
    • H10D84/961—Substrate and well contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/909—Microarchitecture
    • H10D84/959—Connectability characteristics, i.e. diffusion and polysilicon geometries
    • H10D84/966—Gate electrode terminals or contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
ES15707848T 2014-03-03 2015-02-19 Celda estándar de alto rendimiento Active ES2905416T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/195,525 US9318476B2 (en) 2014-03-03 2014-03-03 High performance standard cell with continuous oxide definition and characterized leakage current
PCT/US2015/016690 WO2015134202A1 (en) 2014-03-03 2015-02-19 High performance standard cell

Publications (1)

Publication Number Publication Date
ES2905416T3 true ES2905416T3 (es) 2022-04-08

Family

ID=52598835

Family Applications (1)

Application Number Title Priority Date Filing Date
ES15707848T Active ES2905416T3 (es) 2014-03-03 2015-02-19 Celda estándar de alto rendimiento

Country Status (9)

Country Link
US (1) US9318476B2 (cg-RX-API-DMAC7.html)
EP (2) EP3998630A1 (cg-RX-API-DMAC7.html)
JP (1) JP6100981B1 (cg-RX-API-DMAC7.html)
KR (1) KR101724362B1 (cg-RX-API-DMAC7.html)
CN (2) CN106068557B (cg-RX-API-DMAC7.html)
BR (1) BR112016020239B1 (cg-RX-API-DMAC7.html)
CA (1) CA2939202C (cg-RX-API-DMAC7.html)
ES (1) ES2905416T3 (cg-RX-API-DMAC7.html)
WO (1) WO2015134202A1 (cg-RX-API-DMAC7.html)

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US9590051B2 (en) * 2013-12-18 2017-03-07 Intel Corporation Heterogeneous layer device
US20150311122A1 (en) * 2014-04-28 2015-10-29 Globalfoundries Inc. Forming gate tie between abutting cells and resulting device
US9634026B1 (en) * 2016-07-13 2017-04-25 Qualcomm Incorporated Standard cell architecture for reduced leakage current and improved decoupling capacitance
KR102469885B1 (ko) 2017-09-11 2022-11-22 삼성전자주식회사 반도체 장치
CN109524394B (zh) * 2017-09-18 2021-08-10 联华电子股份有限公司 具有虚置标准单元的集成电路
US10600866B2 (en) * 2018-02-01 2020-03-24 Qualcomm Incorporated Standard cell architecture for gate tie-off
US11068633B2 (en) 2018-08-31 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fault diagnostics
US11030381B2 (en) 2019-01-16 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Leakage analysis on semiconductor device
KR102893583B1 (ko) * 2019-11-29 2025-12-01 삼성전자주식회사 표준셀을 포함하는 집적 회로 및 그 레이아웃 방법
US12575187B2 (en) * 2022-03-09 2026-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method of forming the same
WO2024135324A1 (ja) * 2022-12-22 2024-06-27 株式会社ソシオネクスト 半導体集積回路装置

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JP3897730B2 (ja) * 2003-04-23 2007-03-28 松下電器産業株式会社 半導体記憶装置および半導体集積回路
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Also Published As

Publication number Publication date
WO2015134202A1 (en) 2015-09-11
EP3114708B1 (en) 2021-12-29
CA2939202C (en) 2017-08-29
CA2939202A1 (en) 2015-09-11
JP6100981B1 (ja) 2017-03-22
US20150249076A1 (en) 2015-09-03
BR112016020239B1 (pt) 2022-03-08
KR20160121589A (ko) 2016-10-19
BR112016020239A2 (cg-RX-API-DMAC7.html) 2017-08-15
EP3998630A1 (en) 2022-05-18
JP2017510069A (ja) 2017-04-06
CN106068557B (zh) 2020-07-10
EP3114708A1 (en) 2017-01-11
KR101724362B1 (ko) 2017-04-07
CN106068557A (zh) 2016-11-02
CN111326508A (zh) 2020-06-23
US9318476B2 (en) 2016-04-19

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