ES2700854T3 - Memoria configurada para proporcionar acceso simultáneo de lectura/escritura a múltiples bancos - Google Patents

Memoria configurada para proporcionar acceso simultáneo de lectura/escritura a múltiples bancos Download PDF

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Publication number
ES2700854T3
ES2700854T3 ES16160755T ES16160755T ES2700854T3 ES 2700854 T3 ES2700854 T3 ES 2700854T3 ES 16160755 T ES16160755 T ES 16160755T ES 16160755 T ES16160755 T ES 16160755T ES 2700854 T3 ES2700854 T3 ES 2700854T3
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Spain
Prior art keywords
memory
read
controller
write
local
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES16160755T
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English (en)
Spanish (es)
Inventor
Esin Terzioglu
Dongkyu Park
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Qualcomm Inc
Original Assignee
Qualcomm Inc
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Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
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Publication of ES2700854T3 publication Critical patent/ES2700854T3/es
Active legal-status Critical Current
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Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/161Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0844Multiple simultaneous or quasi-simultaneous cache accessing
    • G06F12/0855Overlapped cache accessing, e.g. pipeline
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893Caches characterised by their organisation or structure
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/1652Handling requests for interconnection or transfer for access to memory bus based on arbitration in a multiprocessor architecture
    • G06F13/1663Access to shared memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Memory System (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
ES16160755T 2011-11-16 2012-11-16 Memoria configurada para proporcionar acceso simultáneo de lectura/escritura a múltiples bancos Active ES2700854T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/297,771 US8699277B2 (en) 2011-11-16 2011-11-16 Memory configured to provide simultaneous read/write access to multiple banks

Publications (1)

Publication Number Publication Date
ES2700854T3 true ES2700854T3 (es) 2019-02-19

Family

ID=47470109

Family Applications (2)

Application Number Title Priority Date Filing Date
ES16160755T Active ES2700854T3 (es) 2011-11-16 2012-11-16 Memoria configurada para proporcionar acceso simultáneo de lectura/escritura a múltiples bancos
ES12808934.9T Active ES2575095T3 (es) 2011-11-16 2012-11-16 Memoria configurada para proporcionar acceso simultáneo de lectura / escritura a múltiples bancos

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES12808934.9T Active ES2575095T3 (es) 2011-11-16 2012-11-16 Memoria configurada para proporcionar acceso simultáneo de lectura / escritura a múltiples bancos

Country Status (10)

Country Link
US (1) US8699277B2 (https=)
EP (2) EP3082048B1 (https=)
JP (1) JP5852259B2 (https=)
KR (1) KR101669945B1 (https=)
CN (1) CN104081372B (https=)
BR (1) BR112014011806B1 (https=)
ES (2) ES2700854T3 (https=)
HU (1) HUE028961T2 (https=)
IN (1) IN2014CN03730A (https=)
WO (1) WO2013075013A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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WO2013014841A1 (ja) * 2011-07-22 2013-01-31 パナソニック株式会社 データ処理装置およびデータ処理方法
US10719237B2 (en) 2016-01-11 2020-07-21 Micron Technology, Inc. Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory
US10140044B2 (en) * 2016-03-31 2018-11-27 Qualcomm Incorporated Efficient memory bank design
US11294594B2 (en) * 2017-08-07 2022-04-05 Kioxia Corporation SSD architecture supporting low latency operation
US11113006B2 (en) 2019-05-06 2021-09-07 Micron Technology, Inc. Dynamic data placement for collision avoidance among concurrent write streams
US11113198B2 (en) 2019-05-06 2021-09-07 Micron Technology, Inc. Timed data transfer between a host system and a memory sub-system
US11776591B2 (en) * 2019-09-26 2023-10-03 Arm Limited Concurrent access techniques utilizing wordlines with the same row address in single port memory
US11386937B2 (en) 2019-10-12 2022-07-12 Arm Limited System device and method for providing single port memory access in bitcell array by tracking dummy wordline

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KR0145224B1 (ko) 1995-05-27 1998-08-17 김광호 불휘발성 반도체 메모리의 분리된 기입 및 독출 경로를 가지는 워드라인 구동회로
US5996051A (en) 1997-04-14 1999-11-30 Advanced Micro Devices, Inc. Communication system which in a first mode supports concurrent memory acceses of a partitioned memory array and in a second mode supports non-concurrent memory accesses to the entire memory array
US6009501A (en) * 1997-06-18 1999-12-28 Micron Technology, Inc. Method and apparatus for local control signal generation in a memory device
CA2239426A1 (en) 1998-06-03 1999-12-03 Newbridge Networks Corporation Shared memory system
JP2000276400A (ja) * 1999-03-25 2000-10-06 Univ Hiroshima アドレス及びデータ転送回路
US6412030B1 (en) 1999-04-16 2002-06-25 Koninklijke Philips Electronics N.V. System and method to optimize read performance while accepting write data in a PCI bus architecture
CN1282925A (zh) * 1999-07-12 2001-02-07 松下电器产业株式会社 数据处理装置
US6377492B1 (en) 2001-03-19 2002-04-23 Etron Technologies, Inc. Memory architecture for read and write at the same time using a conventional cell
US7738496B1 (en) 2002-12-31 2010-06-15 Cypress Semiconductor Corporation Device that provides the functionality of dual-ported memory using single-ported memory for multiple clock domains
JP4413524B2 (ja) * 2003-05-01 2010-02-10 株式会社東芝 マルチポートメモリ
JP2005242929A (ja) * 2004-02-27 2005-09-08 Fujitsu Ltd 共有メモリのアクセス方法及びデータ処理装置
US20070028027A1 (en) 2005-07-26 2007-02-01 Micron Technology, Inc. Memory device and method having separate write data and read data buses
US7533222B2 (en) 2006-06-29 2009-05-12 Mosys, Inc. Dual-port SRAM memory using single-port memory cell
JP4205743B2 (ja) * 2006-08-22 2009-01-07 エルピーダメモリ株式会社 半導体記憶装置及び半導体装置
US7523228B2 (en) * 2006-09-18 2009-04-21 International Business Machines Corporation Method for performing a direct memory access block move in a direct memory access device
US7551512B2 (en) 2007-07-30 2009-06-23 Agere Systems Inc. Dual-port memory
US7739433B2 (en) 2008-03-05 2010-06-15 Microchip Technology Incorporated Sharing bandwidth of a single port SRAM between at least one DMA peripheral and a CPU operating with a quadrature clock
US7760562B2 (en) 2008-03-13 2010-07-20 Qualcomm Incorporated Address multiplexing in pseudo-dual port memory
US8140739B2 (en) * 2008-08-08 2012-03-20 Imation Corp. Flash memory based storage devices utilizing magnetoresistive random access memory (MRAM) to store files having logical block addresses stored in a write frequency file buffer table
US8164974B2 (en) * 2009-02-24 2012-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuits, systems, and method of interleaving accesses thereof
US8331123B2 (en) * 2009-09-21 2012-12-11 Ocz Technology Group, Inc. High performance solid-state drives and methods therefor
US8375173B2 (en) * 2009-10-09 2013-02-12 Qualcomm Incorporated Accessing a multi-channel memory system having non-uniform page sizes

Also Published As

Publication number Publication date
EP3082048A1 (en) 2016-10-19
US8699277B2 (en) 2014-04-15
EP2780813B1 (en) 2016-04-06
BR112014011806B1 (pt) 2021-01-26
CN104081372A (zh) 2014-10-01
US20130121086A1 (en) 2013-05-16
JP2014533861A (ja) 2014-12-15
EP3082048B1 (en) 2018-10-03
EP2780813A1 (en) 2014-09-24
HUE028961T2 (en) 2017-02-28
KR101669945B1 (ko) 2016-10-27
IN2014CN03730A (https=) 2015-07-03
CN104081372B (zh) 2017-06-13
WO2013075013A1 (en) 2013-05-23
JP5852259B2 (ja) 2016-02-03
BR112014011806A2 (pt) 2017-05-16
KR20140098792A (ko) 2014-08-08
ES2575095T3 (es) 2016-06-24

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