ES253851A1 - Aparato repetidor semiconductor - Google Patents

Aparato repetidor semiconductor

Info

Publication number
ES253851A1
ES253851A1 ES0253851A ES253851A ES253851A1 ES 253851 A1 ES253851 A1 ES 253851A1 ES 0253851 A ES0253851 A ES 0253851A ES 253851 A ES253851 A ES 253851A ES 253851 A1 ES253851 A1 ES 253851A1
Authority
ES
Spain
Prior art keywords
repeater apparatus
semiconductor
zones
low resistance
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0253851A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES253851A1 publication Critical patent/ES253851A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
ES0253851A 1958-12-11 1959-11-17 Aparato repetidor semiconductor Expired ES253851A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US779593A US3061739A (en) 1958-12-11 1958-12-11 Multiple channel field effect semiconductor

Publications (1)

Publication Number Publication Date
ES253851A1 true ES253851A1 (es) 1960-03-01

Family

ID=25116917

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0253851A Expired ES253851A1 (es) 1958-12-11 1959-11-17 Aparato repetidor semiconductor

Country Status (8)

Country Link
US (1) US3061739A (OSRAM)
BE (1) BE584466A (OSRAM)
CH (1) CH397868A (OSRAM)
DE (1) DE1152185B (OSRAM)
ES (1) ES253851A1 (OSRAM)
FR (1) FR1242628A (OSRAM)
GB (1) GB941368A (OSRAM)
NL (1) NL245195A (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210696A (en) * 1961-02-10 1965-10-05 Westinghouse Electric Corp Bridged-t filter
US3187606A (en) * 1961-06-05 1965-06-08 Burroughs Corp Fabricating tool and technique
US3192398A (en) * 1961-07-31 1965-06-29 Merck & Co Inc Composite semiconductor delay line device
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3255360A (en) * 1962-03-30 1966-06-07 Research Corp Field-effect negative resistor
US3163916A (en) * 1962-06-22 1965-01-05 Int Rectifier Corp Unijunction transistor device
BE638316A (OSRAM) * 1962-10-15
NL299821A (OSRAM) * 1962-10-31 1900-01-01
US3173102A (en) * 1962-12-06 1965-03-09 Jr Walter Loewenstern Solid state multiple stream travelling wave amplifier
NL301883A (OSRAM) * 1962-12-17
US3149765A (en) * 1963-05-28 1964-09-22 Western Electric Co Apparatus for removing waffrs from semiconductor slices
US3169837A (en) * 1963-07-31 1965-02-16 Int Rectifier Corp Method of dicing semiconductor wafers
US3292129A (en) * 1963-10-07 1966-12-13 Grace W R & Co Silicon thermistors
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3340490A (en) * 1965-10-21 1967-09-05 Texas Instruments Inc Thermistor
US4364021A (en) * 1977-10-07 1982-12-14 General Electric Company Low voltage varistor configuration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL79529C (OSRAM) * 1948-09-24
NL154165C (OSRAM) * 1949-10-11
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
DE1039646B (de) * 1953-10-19 1958-09-25 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen zwischen Zonen unterschiedlichen Leitungstyps
BE552928A (OSRAM) * 1957-03-18

Also Published As

Publication number Publication date
DE1152185B (de) 1963-08-01
CH397868A (fr) 1965-08-31
GB941368A (en) 1963-11-13
US3061739A (en) 1962-10-30
FR1242628A (fr) 1960-09-30
BE584466A (fr) 1960-03-01
NL245195A (OSRAM)

Similar Documents

Publication Publication Date Title
BR6803288D0 (pt) Dispositivo semicondutor e processo para fazer o mesmo
DK117722B (da) Halvlederkomponent med mindst to felteffekttransistorer ned isoleret styreelektrode.
FR1495739A (fr) Dispositifs semi-conducteurs de très faible surface active et leurs connexions non capacitives
OA01126A (fr) Ecrou Déformable à autoblocage.
CH393513A (de) Selbstschwingender Wechselrichter mit steuerbaren Halbleitergleichrichtern
NL144434B (nl) Thermo-elektrische omzetter.
ES381331A1 (es) Un dispositivo de transistor de efecto de campo.
BE605370A (fr) Perfectionnements relatifs à la production de dispositifs semi-conducteurs.
CH426018A (de) Halbleiterbauelement vom pnpn-Typ
FR1361875A (fr) Cellules photo-électriques à semi-conducteur de surface active très réduite
FR1283082A (fr) Diode à faible intensité
BE610469A (fr) Matière semi-conductrice.
FR1291873A (fr) Lame de monocristal en une matière semi-conductrice
FR1292970A (fr) Onduleur avec tension de sortie sinusoïdale
BE611689A (fr) Source de tension
BUELOW et al. Design of 20, 000 transistor arithmetic and logic units/alu/ to study packaging and circuit techniques for high-speed computers
CH407332A (de) Halterung mit von derselben gehalterten Halbleiterdioden
DK100961C (da) Selvgenererende vekselretter med mindst én styret halvlederensretter med pn-lag.
CH366903A (de) Kristalldiode, insbesondere Siliziumdiode mit scharf definierter Durchbruchsspannung in Sperrichtung
CH474059A (de) Mittel zum Nachweis von Choriongonadotropin in Körperflüssigkeiten
FR1285264A (fr) Autostabilisateur de tension à semi-conducteurs
CH534431A (de) Halbleiteranordnung mit integrierten Isolierschicht-Feldeffekttransistoren
FR1308373A (fr) Générateur à très hautes fréquences
BE611134A (fr) Matière semiconductrice
KR830000455A (ko) 게이트 회로