FR1242628A - Dispositif de translation semi-conducteur - Google Patents

Dispositif de translation semi-conducteur

Info

Publication number
FR1242628A
FR1242628A FR812456A FR812456A FR1242628A FR 1242628 A FR1242628 A FR 1242628A FR 812456 A FR812456 A FR 812456A FR 812456 A FR812456 A FR 812456A FR 1242628 A FR1242628 A FR 1242628A
Authority
FR
France
Prior art keywords
semiconductor
translation device
translation
semiconductor translation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR812456A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1242628A publication Critical patent/FR1242628A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
FR812456A 1958-12-11 1959-12-08 Dispositif de translation semi-conducteur Expired FR1242628A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US779593A US3061739A (en) 1958-12-11 1958-12-11 Multiple channel field effect semiconductor

Publications (1)

Publication Number Publication Date
FR1242628A true FR1242628A (fr) 1960-09-30

Family

ID=25116917

Family Applications (1)

Application Number Title Priority Date Filing Date
FR812456A Expired FR1242628A (fr) 1958-12-11 1959-12-08 Dispositif de translation semi-conducteur

Country Status (8)

Country Link
US (1) US3061739A (OSRAM)
BE (1) BE584466A (OSRAM)
CH (1) CH397868A (OSRAM)
DE (1) DE1152185B (OSRAM)
ES (1) ES253851A1 (OSRAM)
FR (1) FR1242628A (OSRAM)
GB (1) GB941368A (OSRAM)
NL (1) NL245195A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283399B (de) * 1962-10-15 1968-11-21 Rca Corp Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210696A (en) * 1961-02-10 1965-10-05 Westinghouse Electric Corp Bridged-t filter
US3187606A (en) * 1961-06-05 1965-06-08 Burroughs Corp Fabricating tool and technique
US3192398A (en) * 1961-07-31 1965-06-29 Merck & Co Inc Composite semiconductor delay line device
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3255360A (en) * 1962-03-30 1966-06-07 Research Corp Field-effect negative resistor
US3163916A (en) * 1962-06-22 1965-01-05 Int Rectifier Corp Unijunction transistor device
NL299821A (OSRAM) * 1962-10-31 1900-01-01
US3173102A (en) * 1962-12-06 1965-03-09 Jr Walter Loewenstern Solid state multiple stream travelling wave amplifier
NL301883A (OSRAM) * 1962-12-17
US3149765A (en) * 1963-05-28 1964-09-22 Western Electric Co Apparatus for removing waffrs from semiconductor slices
US3169837A (en) * 1963-07-31 1965-02-16 Int Rectifier Corp Method of dicing semiconductor wafers
US3292129A (en) * 1963-10-07 1966-12-13 Grace W R & Co Silicon thermistors
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3340490A (en) * 1965-10-21 1967-09-05 Texas Instruments Inc Thermistor
US4364021A (en) * 1977-10-07 1982-12-14 General Electric Company Low voltage varistor configuration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL79529C (OSRAM) * 1948-09-24
NL154165C (OSRAM) * 1949-10-11
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
DE1039646B (de) * 1953-10-19 1958-09-25 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen zwischen Zonen unterschiedlichen Leitungstyps
BE552928A (OSRAM) * 1957-03-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283399B (de) * 1962-10-15 1968-11-21 Rca Corp Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode

Also Published As

Publication number Publication date
ES253851A1 (es) 1960-03-01
DE1152185B (de) 1963-08-01
CH397868A (fr) 1965-08-31
GB941368A (en) 1963-11-13
US3061739A (en) 1962-10-30
BE584466A (fr) 1960-03-01
NL245195A (OSRAM)

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