CH426018A - Halbleiterbauelement vom pnpn-Typ - Google Patents

Halbleiterbauelement vom pnpn-Typ

Info

Publication number
CH426018A
CH426018A CH1107864A CH1107864A CH426018A CH 426018 A CH426018 A CH 426018A CH 1107864 A CH1107864 A CH 1107864A CH 1107864 A CH1107864 A CH 1107864A CH 426018 A CH426018 A CH 426018A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
pnpn type
pnpn
type
semiconductor
Prior art date
Application number
CH1107864A
Other languages
English (en)
Inventor
Adolf Dr Herlet
Goetz Dipl-Phys V Bernuth
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH426018A publication Critical patent/CH426018A/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/0004—Selecting arrangements using crossbar selectors in the switching stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/964—Roughened surface
CH1107864A 1963-11-16 1964-08-24 Halbleiterbauelement vom pnpn-Typ CH426018A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES88315A DE1239778B (de) 1963-11-16 1963-11-16 Schaltbares Halbleiterbauelement von pnpn-Typ

Publications (1)

Publication Number Publication Date
CH426018A true CH426018A (de) 1966-12-15

Family

ID=7514367

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1107864A CH426018A (de) 1963-11-16 1964-08-24 Halbleiterbauelement vom pnpn-Typ

Country Status (4)

Country Link
US (1) US3366851A (de)
CH (1) CH426018A (de)
DE (1) DE1239778B (de)
GB (1) GB1073707A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1489694B2 (de) * 1965-07-10 1971-09-02 Brown, Boven & Cie AG, 6800 Mann heim Verfahren zum herstellen eines halbleiterbauelementes mit gestoerten kristallschichten an der oberflaeche
US3449649A (en) * 1966-07-09 1969-06-10 Bbc Brown Boveri & Cie S.c.r. with emitter electrode spaced from semiconductor edge equal to 10 times base thickness
GB1172772A (en) * 1967-07-20 1969-12-03 Westinghouse Brake & Signal Semiconductor Devices.
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL201235A (de) * 1954-10-18
US2935453A (en) * 1957-04-11 1960-05-03 Sylvania Electric Prod Manufacture of semiconductive translating devices
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial
US3209428A (en) * 1961-07-20 1965-10-05 Westinghouse Electric Corp Process for treating semiconductor devices
US3196327A (en) * 1961-09-19 1965-07-20 Jr Donald C Dickson P-i-n semiconductor with improved breakdown voltage
US3262234A (en) * 1963-10-04 1966-07-26 Int Rectifier Corp Method of forming a semiconductor rim by sandblasting

Also Published As

Publication number Publication date
GB1073707A (en) 1967-06-28
US3366851A (en) 1968-01-30
DE1239778B (de) 1967-05-03

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