ES2132208T3 - Circuito de fusible para circuito integrado. - Google Patents
Circuito de fusible para circuito integrado.Info
- Publication number
- ES2132208T3 ES2132208T3 ES93402582T ES93402582T ES2132208T3 ES 2132208 T3 ES2132208 T3 ES 2132208T3 ES 93402582 T ES93402582 T ES 93402582T ES 93402582 T ES93402582 T ES 93402582T ES 2132208 T3 ES2132208 T3 ES 2132208T3
- Authority
- ES
- Spain
- Prior art keywords
- fuse
- circuit
- state
- circuits
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
LA INVENCION SE REFIERE A CIRCUITOS INTEGRADOS, Y MAS EN ESPECIAL A CIRCUITOS DE FUSIBLES. PARA MEJORAR LA FIABILIDAD DE LOS CIRCUITOS INTEGRADOS DE FUSIBLE FISICO, LA INVENCION PROPONE ASOCIAR AL FUSIBLE (F) UNA CELULA DE MEMORIA NO VOLATIL PROGRAMABLE ELECTRICAMENTE (TGF), ESTANDO LA CELULA PROGRAMADA AL MISMO TIEMPO QUE EL FUSIBLE ESTA FUNDIDO. EL ESTADO DEL FUSIBLE SE CONFIRMA POR EL ESTADO DE LA MEMORIA. EN PARTICULAR, EL ESTADO FUNDIDO DEL FUSIBLE PUEDE CONFIRMARSE MEDIANTE EL ESTADO PROGRAMADO DE LA MEMORIA, EN APLICACIONES DONDE LO QUE IMPORTA ES ASEGURARSE DE QUE EL CIRCUITO PUEDE CONTINUAR CONSERVANDO LAS FUNCIONALIDADES DEFINIDAS POR EL ESTADO FUNDIDO DEL FUSIBLE. SI LA ESTRUCTURA FUNDIDA VUELVE A TOMAR POSTERIORMENTE MAS O MENOS LAS CARACTERISTICAS DE LA ESTRUCTURA INTACTA, LA CELULA DE MEMORIA SUPLIRA AL FUSIBLE DEFECTUOSO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9212969A FR2697673B1 (fr) | 1992-10-29 | 1992-10-29 | Circuit à fusible, pour circuit intégré. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2132208T3 true ES2132208T3 (es) | 1999-08-16 |
Family
ID=9434997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES93402582T Expired - Lifetime ES2132208T3 (es) | 1992-10-29 | 1993-10-20 | Circuito de fusible para circuito integrado. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5442589A (es) |
EP (1) | EP0597745B1 (es) |
JP (1) | JPH077139A (es) |
DE (1) | DE69324328T2 (es) |
ES (1) | ES2132208T3 (es) |
FR (1) | FR2697673B1 (es) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0149259B1 (ko) * | 1995-06-30 | 1998-10-15 | 김광호 | 반도체 메모리 장치의 퓨즈 시그너쳐 회로 |
FR2739706B1 (fr) * | 1995-10-09 | 1997-11-21 | Inside Technologies | Perfectionnements aux cartes a memoire |
FR2739737B1 (fr) * | 1995-10-09 | 1997-11-21 | Inside Technologies | Perfectionnements aux cartes a memoire |
US5631862A (en) * | 1996-03-05 | 1997-05-20 | Micron Technology, Inc. | Self current limiting antifuse circuit |
US5861793A (en) * | 1996-04-29 | 1999-01-19 | Hatton; Ken W. | Re-settable fuse |
US5734617A (en) * | 1996-08-01 | 1998-03-31 | Micron Technology Corporation | Shared pull-up and selection circuitry for programmable cells such as antifuse cells |
JP3274364B2 (ja) * | 1996-08-14 | 2002-04-15 | 株式会社東芝 | 半導体装置及びヒューズチェック方法 |
GB2318228B (en) * | 1996-10-09 | 2000-08-09 | Ericsson Telefon Ab L M | Trimming circuit |
US6104209A (en) * | 1998-08-27 | 2000-08-15 | Micron Technology, Inc. | Low skew differential receiver with disable feature |
US5953276A (en) * | 1997-12-18 | 1999-09-14 | Micron Technology, Inc. | Fully-differential amplifier |
US5835324A (en) * | 1997-07-14 | 1998-11-10 | Hatton; Ken W. | Programmable electronic fuse box having a key pad which does not require fuse elements |
US5889679A (en) * | 1997-07-15 | 1999-03-30 | Integrated Device Technology, Inc. | Fuse array control for smart function enable |
US6212482B1 (en) | 1998-03-06 | 2001-04-03 | Micron Technology, Inc. | Circuit and method for specifying performance parameters in integrated circuits |
US6268760B1 (en) * | 1998-04-30 | 2001-07-31 | Texas Instruments Incorporated | Hysteretic fuse control circuit with serial interface fusing |
US5999038A (en) * | 1998-09-24 | 1999-12-07 | Atmel Corporation | Fuse circuit having zero power draw for partially blown condition |
DE10063685A1 (de) * | 2000-12-20 | 2002-07-18 | Infineon Technologies Ag | Schaltungsanordnung zur Ansteuerung einer programmierbaren Verbindung |
DE10063684A1 (de) * | 2000-12-20 | 2002-07-18 | Infineon Technologies Ag | Schaltungsanordnung zur Ansteuerung einer programmierbaren Verbindung |
JP2002203901A (ja) * | 2000-12-27 | 2002-07-19 | Toshiba Microelectronics Corp | フューズ回路 |
US6515904B2 (en) | 2001-03-21 | 2003-02-04 | Matrix Semiconductor, Inc. | Method and system for increasing programming bandwidth in a non-volatile memory device |
US6574145B2 (en) | 2001-03-21 | 2003-06-03 | Matrix Semiconductor, Inc. | Memory device and method for sensing while programming a non-volatile memory cell |
US6597234B2 (en) * | 2001-12-14 | 2003-07-22 | Motorola, Inc. | Anti-fuse circuit and method of operation |
US7006392B2 (en) * | 2004-01-26 | 2006-02-28 | Micron Technology, Inc. | Memory redundancy programming |
US7755162B2 (en) | 2004-05-06 | 2010-07-13 | Sidense Corp. | Anti-fuse memory cell |
US9123572B2 (en) | 2004-05-06 | 2015-09-01 | Sidense Corporation | Anti-fuse memory cell |
US8735297B2 (en) | 2004-05-06 | 2014-05-27 | Sidense Corporation | Reverse optical proximity correction method |
JP4981661B2 (ja) * | 2004-05-06 | 2012-07-25 | サイデンス コーポレーション | 分割チャネルアンチヒューズアレイ構造 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
CN108320007A (zh) * | 2018-02-06 | 2018-07-24 | 常州印刷电子产业研究院有限公司 | 防伪标签及其控制方法 |
FR3085530B1 (fr) * | 2018-08-31 | 2020-10-02 | St Microelectronics Rousset | Circuit integre comportant au moins une cellule memoire avec un dispositif anti-fusible. |
US11093164B2 (en) * | 2019-08-27 | 2021-08-17 | Micron Technology, Inc. | Handling bad blocks generated during a block erase operation |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4198696A (en) * | 1978-10-24 | 1980-04-15 | International Business Machines Corporation | Laser cut storage cell |
JPS60182219A (ja) * | 1984-02-29 | 1985-09-17 | Fujitsu Ltd | 半導体装置 |
JPS61123169A (ja) * | 1984-11-20 | 1986-06-11 | Fujitsu Ltd | 半導体集積回路 |
FR2649823B1 (fr) * | 1989-07-13 | 1993-10-22 | Gemplus Card International | Fusible mos a claquage d'oxyde et son application aux cartes a memoire |
JP2547451B2 (ja) * | 1989-09-18 | 1996-10-23 | 富士通株式会社 | 半導体記憶装置 |
JPH07105159B2 (ja) * | 1989-11-16 | 1995-11-13 | 株式会社東芝 | 半導体記憶装置の冗長回路 |
FR2660795B1 (fr) * | 1990-04-10 | 1994-01-07 | Sgs Thomson Microelectronics Sa | Circuit de detection de fusible. |
FR2684206B1 (fr) * | 1991-11-25 | 1994-01-07 | Sgs Thomson Microelectronics Sa | Circuit de lecture de fusible de redondance pour memoire integree. |
-
1992
- 1992-10-29 FR FR9212969A patent/FR2697673B1/fr not_active Expired - Fee Related
-
1993
- 1993-10-20 ES ES93402582T patent/ES2132208T3/es not_active Expired - Lifetime
- 1993-10-20 EP EP93402582A patent/EP0597745B1/fr not_active Expired - Lifetime
- 1993-10-20 DE DE69324328T patent/DE69324328T2/de not_active Expired - Fee Related
- 1993-10-26 US US08/143,185 patent/US5442589A/en not_active Expired - Lifetime
- 1993-10-29 JP JP5294762A patent/JPH077139A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2697673A1 (fr) | 1994-05-06 |
US5442589A (en) | 1995-08-15 |
JPH077139A (ja) | 1995-01-10 |
EP0597745A1 (fr) | 1994-05-18 |
EP0597745B1 (fr) | 1999-04-07 |
DE69324328D1 (de) | 1999-05-12 |
FR2697673B1 (fr) | 1994-12-16 |
DE69324328T2 (de) | 1999-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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