ES2124792T3 - Memoria de acceso aleatorio no volatil. - Google Patents

Memoria de acceso aleatorio no volatil.

Info

Publication number
ES2124792T3
ES2124792T3 ES93918644T ES93918644T ES2124792T3 ES 2124792 T3 ES2124792 T3 ES 2124792T3 ES 93918644 T ES93918644 T ES 93918644T ES 93918644 T ES93918644 T ES 93918644T ES 2124792 T3 ES2124792 T3 ES 2124792T3
Authority
ES
Spain
Prior art keywords
random access
extensions
pen
access memory
volatile random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93918644T
Other languages
English (en)
Inventor
Richard Lienau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Estancia Ltd
Pageant Technologies Inc
Original Assignee
Estancia Ltd
Pageant Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Estancia Ltd, Pageant Technologies Inc filed Critical Estancia Ltd
Application granted granted Critical
Publication of ES2124792T3 publication Critical patent/ES2124792T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/155—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements with cylindrical configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Cosmetics (AREA)
  • Credit Cards Or The Like (AREA)
  • Storage Device Security (AREA)
  • Saccharide Compounds (AREA)

Abstract

SE PRESENTA UNA MEMORIA NO VOLATIL DE ACCESO ALEATORIO QUE TIENE UN SUBSTRATO (50) QUE SOPORTA EXTENSIONES SEPARADAS MAGNETICAMENTE POLARIZABLES (19) CADA UNA DE ELLAS RODEADA POR UN MIEMBRO EN FORMA DE CIRCUITO DE ESCRITURA COMPLETA (18) Y DISPUESTA PARA PENETRAR EN EL CANAL HALL (36) DE UN FET DE DESCARGA DOBLE (16) CON SU CAMPO MAGNETICO RESIDUAL. LAS EXTENSIONES ESTAN ORGANIZADAS EN FILAS DE PALABRAS Y COLUMNAS DE BITS, CADA UNA DE ELLAS ESCRITA MEDIANTE UNA CORRIENTE SIMPLE DE ESCRITURA COMPLETA A TRAVES DEL MIEMBRO DE CIRCUITO CIRCUNDANTE Y CADA UNA DE ELLAS LEIDA POR UN COMPARADOR CONECTADO A LOS DRENAJES DEL FET (42, 52''). LA MEMORIA PUEDE FABRICARSE EN UNA VARIEDAD DE FORMAS (POR EJEMPLO UNA TARJETA PLANA).
ES93918644T 1992-08-05 1993-08-04 Memoria de acceso aleatorio no volatil. Expired - Lifetime ES2124792T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/925,986 US5295097A (en) 1992-08-05 1992-08-05 Nonvolatile random access memory

Publications (1)

Publication Number Publication Date
ES2124792T3 true ES2124792T3 (es) 1999-02-16

Family

ID=25452543

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93918644T Expired - Lifetime ES2124792T3 (es) 1992-08-05 1993-08-04 Memoria de acceso aleatorio no volatil.

Country Status (9)

Country Link
US (1) US5295097A (es)
EP (1) EP0654167B1 (es)
JP (1) JPH07509801A (es)
AT (1) ATE172813T1 (es)
AU (1) AU4802693A (es)
DE (1) DE69321842T2 (es)
DK (1) DK0654167T3 (es)
ES (1) ES2124792T3 (es)
WO (1) WO1994003899A1 (es)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5488250A (en) * 1994-06-01 1996-01-30 Falke Hennig Hall effect modulation of resistor values
US5699293A (en) * 1996-10-09 1997-12-16 Motorola Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device
US5926414A (en) * 1997-04-04 1999-07-20 Magnetic Semiconductors High-efficiency miniature magnetic integrated circuit structures
US5936882A (en) * 1998-03-31 1999-08-10 Motorola, Inc. Magnetoresistive random access memory device and method of manufacture
US6051441A (en) * 1998-05-12 2000-04-18 Plumeria Investments, Inc. High-efficiency miniature magnetic integrated circuit structures
US6140139A (en) * 1998-12-22 2000-10-31 Pageant Technologies, Inc. Hall effect ferromagnetic random access memory device and its method of manufacture
US6175515B1 (en) * 1998-12-31 2001-01-16 Honeywell International Inc. Vertically integrated magnetic memory
US6229729B1 (en) 1999-03-04 2001-05-08 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
US6330183B1 (en) 1999-03-04 2001-12-11 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6266267B1 (en) 1999-03-04 2001-07-24 Pageant Technologies, Inc. Single conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6317354B1 (en) 1999-03-04 2001-11-13 Pageant Technologies, Inc. Non-volatile random access ferromagnetic memory with single collector sensor
US6288929B1 (en) 1999-03-04 2001-09-11 Pageant Technologies, Inc. Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
US6052302A (en) * 1999-09-27 2000-04-18 Motorola, Inc. Bit-wise conditional write method and system for an MRAM
AU2001230988A1 (en) * 2000-01-21 2001-07-31 Estancia Limited Programmable array logic circuit employing non-volatile ferromagnetic memory cells
WO2001054133A1 (en) 2000-01-21 2001-07-26 Pageant Technologies, Inc. A programmable array logic circuit macrocell using ferromagnetic memory cells
WO2001054279A1 (en) 2000-01-21 2001-07-26 Pageant Technologies, Inc. A register having a ferromagnetic memory cells
US7123050B2 (en) * 2002-09-19 2006-10-17 Lienau Richard M Programmable array logic circuit employing non-volatile ferromagnetic memory cells
AU2001243503A1 (en) * 2000-03-09 2001-09-17 Richard M. Lienau Method and apparatus for reading data from a ferromagnetic memory cell
AU2001269828A1 (en) * 2000-06-15 2001-12-24 Estancia Limited Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry
US7110312B2 (en) * 2000-10-20 2006-09-19 Micromem Technologies Inc. Non-volatile magnetic memory device
EP1310962A1 (en) * 2001-11-08 2003-05-14 Hitachi Ltd. Magnetic memory cell
ATE468609T1 (de) * 2003-03-31 2010-06-15 Panasonic Corp Speicherzelle, speicher mit der speicherzelle, speicherzellenherstellungsverfahren und speicheraufzeichnungs-/leseverfahren
US20040257861A1 (en) * 2003-06-17 2004-12-23 Berndt Dale F. Method of incorporating magnetic materials in a semiconductor manufacturing process
US20060023496A1 (en) * 2004-07-27 2006-02-02 Stephane Aouba Tunable magnetic switch
US20060262593A1 (en) * 2004-07-27 2006-11-23 Stephane Aouba Magnetic memory composition and method of manufacture
MX2007009000A (es) * 2005-01-31 2007-11-12 Univ Toronto Composicion de memoria magnetica y metodo de fabricacion.
AU2006208470A1 (en) * 2005-01-31 2006-08-03 The Governing Council Of The University Of Toronto Magnetic memory composition and method of manufacture
US7701756B2 (en) * 2005-12-21 2010-04-20 Governing Council Of The University Of Toronto Magnetic memory composition and method of manufacture
US7411803B1 (en) * 2006-02-27 2008-08-12 Richard Lienau Resistive coupled hall effect sensor
CN100477316C (zh) * 2006-04-11 2009-04-08 中国科学院物理研究所 基于环状闭合型磁性多层膜的磁逻辑元件
WO2008103197A2 (en) * 2006-11-07 2008-08-28 Richard Lienau Coil sensor memory devices and method
US8081507B2 (en) * 2008-09-25 2011-12-20 Richard Lienau Tri-state memory device and method
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360899A (en) * 1980-02-15 1982-11-23 Texas Instruments Incorporated Magnetic domain random access memory
US4803658A (en) * 1987-01-15 1989-02-07 Westinghouse Electric Corp. Cross tie random access memory
US5068826A (en) * 1990-01-18 1991-11-26 Microunity Systems Engineering Hall effect semiconductor memory cell
US5089991A (en) * 1990-01-18 1992-02-18 Micro Unity Systems Engineering, Inc. Non-volatile memory cell

Also Published As

Publication number Publication date
EP0654167A1 (en) 1995-05-24
ATE172813T1 (de) 1998-11-15
EP0654167A4 (en) 1995-12-06
AU4802693A (en) 1994-03-03
DE69321842T2 (de) 1999-05-12
US5295097A (en) 1994-03-15
DK0654167T3 (da) 1999-07-12
EP0654167B1 (en) 1998-10-28
DE69321842D1 (de) 1998-12-03
JPH07509801A (ja) 1995-10-26
WO1994003899A1 (en) 1994-02-17

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