AU2001243503A1 - Method and apparatus for reading data from a ferromagnetic memory cell - Google Patents

Method and apparatus for reading data from a ferromagnetic memory cell

Info

Publication number
AU2001243503A1
AU2001243503A1 AU2001243503A AU4350301A AU2001243503A1 AU 2001243503 A1 AU2001243503 A1 AU 2001243503A1 AU 2001243503 A AU2001243503 A AU 2001243503A AU 4350301 A AU4350301 A AU 4350301A AU 2001243503 A1 AU2001243503 A1 AU 2001243503A1
Authority
AU
Australia
Prior art keywords
memory cell
reading data
ferromagnetic memory
ferromagnetic
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001243503A
Inventor
Richard M. Lienau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001243503A1 publication Critical patent/AU2001243503A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
AU2001243503A 2000-03-09 2001-03-08 Method and apparatus for reading data from a ferromagnetic memory cell Abandoned AU2001243503A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18798100P 2000-03-09 2000-03-09
US60187981 2000-03-09
PCT/US2001/007409 WO2001067459A1 (en) 2000-03-09 2001-03-08 Method and apparatus for reading data from a ferromagnetic memory cell

Publications (1)

Publication Number Publication Date
AU2001243503A1 true AU2001243503A1 (en) 2001-09-17

Family

ID=22691290

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001243503A Abandoned AU2001243503A1 (en) 2000-03-09 2001-03-08 Method and apparatus for reading data from a ferromagnetic memory cell

Country Status (4)

Country Link
US (4) US6873546B2 (en)
AU (1) AU2001243503A1 (en)
TW (1) TW504693B (en)
WO (1) WO2001067459A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7023727B2 (en) * 2000-06-15 2006-04-04 Pageant Technologies, Inc. Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry
US6385083B1 (en) * 2001-08-01 2002-05-07 Hewlett-Packard Company MRAM device including offset conductors
US7411803B1 (en) 2006-02-27 2008-08-12 Richard Lienau Resistive coupled hall effect sensor
US7796420B2 (en) * 2006-11-07 2010-09-14 Richard Lienau Coil sensor memory device and method
US8081507B2 (en) * 2008-09-25 2011-12-20 Richard Lienau Tri-state memory device and method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791604A (en) 1984-02-15 1988-12-13 Joseph J. Bednarz Sheet random access memory
JPH041990A (en) * 1990-04-18 1992-01-07 Nec Corp Magnetic storage element and its access method
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
DE69225920T2 (en) * 1991-03-06 1998-10-15 Mitsubishi Electric Corp Magnetic thin film memory device
US5926411A (en) * 1991-12-30 1999-07-20 Ioptics Incorporated Optical random access memory
US5295097A (en) 1992-08-05 1994-03-15 Lienau Richard M Nonvolatile random access memory
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5926414A (en) * 1997-04-04 1999-07-20 Magnetic Semiconductors High-efficiency miniature magnetic integrated circuit structures
US5838608A (en) * 1997-06-16 1998-11-17 Motorola, Inc. Multi-layer magnetic random access memory and method for fabricating thereof
US5864498A (en) * 1997-10-01 1999-01-26 High Density Circuits Ferromagnetic memory using soft magnetic material and hard magnetic material
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
KR19990087860A (en) * 1998-05-13 1999-12-27 이데이 노부유끼 Element exploiting magnetic material and addressing method therefor
US5969978A (en) * 1998-09-30 1999-10-19 The United States Of America As Represented By The Secretary Of The Navy Read/write memory architecture employing closed ring elements
US6140139A (en) 1998-12-22 2000-10-31 Pageant Technologies, Inc. Hall effect ferromagnetic random access memory device and its method of manufacture
US6229729B1 (en) 1999-03-04 2001-05-08 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
US6266267B1 (en) 1999-03-04 2001-07-24 Pageant Technologies, Inc. Single conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6317354B1 (en) 1999-03-04 2001-11-13 Pageant Technologies, Inc. Non-volatile random access ferromagnetic memory with single collector sensor
US6288929B1 (en) 1999-03-04 2001-09-11 Pageant Technologies, Inc. Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
US6330183B1 (en) 1999-03-04 2001-12-11 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory

Also Published As

Publication number Publication date
WO2001067459A1 (en) 2001-09-13
US7414885B2 (en) 2008-08-19
US6873546B2 (en) 2005-03-29
US7177180B2 (en) 2007-02-13
US20030223265A1 (en) 2003-12-04
US20080273368A1 (en) 2008-11-06
US20050270827A1 (en) 2005-12-08
US20070103969A1 (en) 2007-05-10
TW504693B (en) 2002-10-01

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