AU2001232862A1 - A register having a ferromagnetic memory cells - Google Patents

A register having a ferromagnetic memory cells

Info

Publication number
AU2001232862A1
AU2001232862A1 AU2001232862A AU3286201A AU2001232862A1 AU 2001232862 A1 AU2001232862 A1 AU 2001232862A1 AU 2001232862 A AU2001232862 A AU 2001232862A AU 3286201 A AU3286201 A AU 3286201A AU 2001232862 A1 AU2001232862 A1 AU 2001232862A1
Authority
AU
Australia
Prior art keywords
register
memory cells
ferromagnetic memory
ferromagnetic
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001232862A
Inventor
Richard M. Lienau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Estancia Ltd
Pageant Technologies Inc
Original Assignee
Estancia Ltd
Pageant Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Estancia Ltd, Pageant Technologies Inc filed Critical Estancia Ltd
Publication of AU2001232862A1 publication Critical patent/AU2001232862A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/45—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of non-linear magnetic or dielectric devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
AU2001232862A 2000-01-21 2001-01-20 A register having a ferromagnetic memory cells Abandoned AU2001232862A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17753100P 2000-01-21 2000-01-21
US60177531 2000-01-21
PCT/US2001/001792 WO2001054279A1 (en) 2000-01-21 2001-01-20 A register having a ferromagnetic memory cells

Publications (1)

Publication Number Publication Date
AU2001232862A1 true AU2001232862A1 (en) 2001-07-31

Family

ID=22648949

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001232862A Abandoned AU2001232862A1 (en) 2000-01-21 2001-01-20 A register having a ferromagnetic memory cells

Country Status (3)

Country Link
US (1) US6711069B2 (en)
AU (1) AU2001232862A1 (en)
WO (1) WO2001054279A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073690B2 (en) 2001-11-14 2008-04-09 株式会社ルネサステクノロジ Thin film magnetic memory device
US7411803B1 (en) 2006-02-27 2008-08-12 Richard Lienau Resistive coupled hall effect sensor
WO2008103197A2 (en) * 2006-11-07 2008-08-28 Richard Lienau Coil sensor memory devices and method
US8081507B2 (en) * 2008-09-25 2011-12-20 Richard Lienau Tri-state memory device and method
US8675433B2 (en) * 2011-03-22 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifier

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791604A (en) 1984-02-15 1988-12-13 Joseph J. Bednarz Sheet random access memory
US5550782A (en) * 1991-09-03 1996-08-27 Altera Corporation Programmable logic array integrated circuits
US5329486A (en) * 1992-04-24 1994-07-12 Motorola, Inc. Ferromagnetic memory device
US5295097A (en) 1992-08-05 1994-03-15 Lienau Richard M Nonvolatile random access memory
US5436576A (en) * 1994-05-20 1995-07-25 Intel Corporation Switch matrices using reduced number of switching devices for signal routing
US5712578A (en) * 1995-12-27 1998-01-27 Intel Corporation PLA architecture having improved clock signal to output timing using a type-I domino and plane
US6157979A (en) * 1998-03-14 2000-12-05 Advanced Technology Materials, Inc. Programmable controlling device with non-volatile ferroelectric state-machines for restarting processor when power is restored with execution states retained in said non-volatile state-machines on power down
US6140139A (en) 1998-12-22 2000-10-31 Pageant Technologies, Inc. Hall effect ferromagnetic random access memory device and its method of manufacture
US6330183B1 (en) 1999-03-04 2001-12-11 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6266267B1 (en) 1999-03-04 2001-07-24 Pageant Technologies, Inc. Single conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6229729B1 (en) 1999-03-04 2001-05-08 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
US6288929B1 (en) 1999-03-04 2001-09-11 Pageant Technologies, Inc. Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
US6317354B1 (en) 1999-03-04 2001-11-13 Pageant Technologies, Inc. Non-volatile random access ferromagnetic memory with single collector sensor

Also Published As

Publication number Publication date
WO2001054279B1 (en) 2001-11-08
WO2001054279A1 (en) 2001-07-26
US20030223264A1 (en) 2003-12-04
US6711069B2 (en) 2004-03-23

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