AU2000270225A1 - A spin filter and a memory using such a spin filter - Google Patents
A spin filter and a memory using such a spin filterInfo
- Publication number
- AU2000270225A1 AU2000270225A1 AU2000270225A AU7022500A AU2000270225A1 AU 2000270225 A1 AU2000270225 A1 AU 2000270225A1 AU 2000270225 A AU2000270225 A AU 2000270225A AU 7022500 A AU7022500 A AU 7022500A AU 2000270225 A1 AU2000270225 A1 AU 2000270225A1
- Authority
- AU
- Australia
- Prior art keywords
- spin filter
- memory
- spin
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/402—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of II-VI type, e.g. Zn1-x Crx Se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/408—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 half-metallic, i.e. having only one electronic spin direction at the Fermi level, e.g. CrO2, Heusler alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/933—Spintronics or quantum computing
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Memories (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0021302 | 2000-08-30 | ||
GBGB0021302.5A GB0021302D0 (en) | 2000-08-30 | 2000-08-30 | Spin filter device |
PCT/GB2000/003422 WO2002019435A1 (en) | 2000-08-30 | 2000-09-06 | A spin filter and a memory using such a spin filter |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2000270225A1 true AU2000270225A1 (en) | 2002-03-13 |
Family
ID=9898540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2000270225A Abandoned AU2000270225A1 (en) | 2000-08-30 | 2000-09-06 | A spin filter and a memory using such a spin filter |
Country Status (6)
Country | Link |
---|---|
US (1) | US7180087B1 (en) |
EP (1) | EP1314206A1 (en) |
JP (1) | JP2004523099A (en) |
AU (1) | AU2000270225A1 (en) |
GB (1) | GB0021302D0 (en) |
WO (1) | WO2002019435A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005109454A1 (en) * | 2004-05-07 | 2005-11-17 | Etech Ag | Ferromagnetic influence on quantum dots |
EP1830410A1 (en) | 2006-02-24 | 2007-09-05 | Hitachi, Ltd. | Single-charge tunnelling device |
GB2460666A (en) * | 2008-06-04 | 2009-12-09 | Sharp Kk | Exciton spin control in AlGaInN quantum dots |
JP2011243716A (en) * | 2010-05-18 | 2011-12-01 | Toshiba Corp | Spin transistor and integrated circuit |
US9748356B2 (en) | 2012-09-25 | 2017-08-29 | Stmicroelectronics, Inc. | Threshold adjustment for quantum dot array devices with metal source and drain |
US9601630B2 (en) * | 2012-09-25 | 2017-03-21 | Stmicroelectronics, Inc. | Transistors incorporating metal quantum dots into doped source and drain regions |
US10002938B2 (en) | 2013-08-20 | 2018-06-19 | Stmicroelectronics, Inc. | Atomic layer deposition of selected molecular clusters |
US9240799B1 (en) * | 2014-11-04 | 2016-01-19 | Regents Of The University Of Minnesota | Spin-based logic device |
CN106449739B (en) * | 2016-10-19 | 2023-09-12 | 中国人民解放军国防科学技术大学 | Single electron spin filter based on quantum dots and single electron spin filtering method |
FR3066297B1 (en) * | 2017-05-11 | 2019-06-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | QUANTUM DEVICE WITH QUANTITIES OF SPIN |
CN110085660B (en) * | 2019-04-15 | 2020-07-28 | 北京大学 | Topological field effect transistor and implementation method thereof |
US11672187B2 (en) | 2020-03-25 | 2023-06-06 | International Business Machines Corporation | Quantum tuning via permanent magnetic flux elements |
US11545201B2 (en) * | 2020-06-23 | 2023-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device with unipolar selector |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4076197B2 (en) * | 1999-05-19 | 2008-04-16 | 株式会社東芝 | Magnetic element, storage device, magnetic reproducing head, three-terminal element, and magnetic disk device |
-
2000
- 2000-08-30 GB GBGB0021302.5A patent/GB0021302D0/en not_active Ceased
- 2000-09-06 AU AU2000270225A patent/AU2000270225A1/en not_active Abandoned
- 2000-09-06 US US10/363,292 patent/US7180087B1/en not_active Expired - Fee Related
- 2000-09-06 WO PCT/GB2000/003422 patent/WO2002019435A1/en not_active Application Discontinuation
- 2000-09-06 EP EP00958807A patent/EP1314206A1/en not_active Withdrawn
- 2000-09-06 JP JP2002524231A patent/JP2004523099A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US7180087B1 (en) | 2007-02-20 |
WO2002019435A1 (en) | 2002-03-07 |
GB0021302D0 (en) | 2000-10-18 |
EP1314206A1 (en) | 2003-05-28 |
JP2004523099A (en) | 2004-07-29 |
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