CN106449739B - Single electron spin filter based on quantum dots and single electron spin filtering method - Google Patents
Single electron spin filter based on quantum dots and single electron spin filtering method Download PDFInfo
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Abstract
A single electron spin filter based on quantum dots and a single electron spin filtering method, the main component is a single electron transistor, the single electron transistor is provided with a coulomb island, a source electrode, a drain electrode and a grid electrode, the quantum dots are used as the coulomb island of the single electron transistor, the coulomb island is connected with the source electrode and the drain electrode by tunneling potential barriers, and the coulomb island is coupled with the grid electrode by capacitance; the single electron transistor is placed in a vertical magnetic field, the drain electrode output end of the single electron transistor is connected with the spintronic reading circuit, and the spintronic reading circuit is placed in a horizontal nonuniform magnetic field. The invention adopts an external regulation method to change spin-unpolarized electrons into spin-polarized electrons after passing through the single-electron transistor, can judge and count the spin direction of the electrons, and is beneficial to the design and application of spin electronic devices with fast data processing, low power consumption and good stability.
Description
Technical Field
The invention relates to the technical field of nano electronic devices, single electron spin and electron, in particular to a single electron spin filter based on quantum dots and a single electron spin filtering method, and specifically relates to a device design for spin filtering by utilizing quantum dot zeeman split energy levels positioned in source-drain bias windows.
Background
Compared with the traditional electronic device, the spin electronic device has the advantages of high data processing speed, low power consumption, good stability and the like. Spintronics devices that have been successfully developed include giant magnetoresistance, spin valves, magnetic tunnel junctions, and magnetic random access memories, among others. However, these spintronic devices based on ferromagnetic metals have difficulty in developing spin transistors with amplification functions and in achieving integration with conventional microelectronic devices.
Since the spontaneous electron spin polarizability in the half metal is almost 100%, the spin polarization can be studied using a half metal material as an emission source of the spin polarization. Common semi-metallic materials are: manganese oxide doped, double perovskite manganese oxide, chromium dioxide, iron oxide, heusler alloys, and the like. However, the curie temperature of the semi-metal is relatively low, and the spin polarizability of electrons is rapidly reduced with the increase of temperature, so that the practical application value of the semi-metal is greatly reduced.
J.s. moodra et al, 1988, for the first time proposed a spin-filtering concept in tunnel junctions, which can be divided into three types, depending on the barrier layer material used for the tunnel junction: ferromagnetic tunnel junctions, ferroelectric tunnel junctions, and multiferroic tunnel junctions (including single-phase multiferroic and composite multiferroic tunnel junctions). The ferromagnetic tunnel junction is a tunnel junction adopting a ferromagnetic insulating material or a semiconductor material as a barrier layer, spin polarization of the tunnel junction is derived from a spin filtering effect of a ferromagnetic semiconductor barrier, the spin filtering effect of the ferromagnetic tunnel junction is derived from the spin dependence of the height of the ferromagnetic barrier, and factors such as magnetism, the height and the width of the barrier have a certain influence on the filtering effect. The ferroelectric tunnel junction refers to a tunnel junction using a ferroelectric insulating material as a barrier layer. The spontaneous polarization of the ferroelectric potential barrier causes shielding charges to be generated at the interface of the electrode close to the potential barrier, and electrostatic potential is further formed, so that energy bands in the electrode are distorted, namely tunneling probability of electrons of the two channels of spin up and spin down passing through the tunnel junction is different, and spin filtering effect is generated. The spin-filtering effect of ferroelectric tunnel junctions arises from the fact that the effective width of the barrier layer is spin-dependent. The multiferroic tunnel junction is made of a ferromagnetic-ferroelectric multiferroic material with ferromagnetism and ferroelectricity as barriers, and the two physical mechanisms for generating spin filtering effect can also act in the multiferroic tunnel junction at the same time.
In non-magnetic semiconductors as well as topological insulators, spin polarization phenomena can be created by the spin-orbit interactions of particles. The silicon alkene material is similar to the graphene structure, and the edges of the conduction band and the valence band of the silicon alkene material are all arranged on the symmetrical points of the Brillouin regions of K and K'. However, there is a tilted structure in the silylene structure, which makes the spin-orbit coupling strength in the silylene structure relatively large, thereby making the open energy gaps at K and K' large. The bending structure can be changed by externally applying a vertical electric field, so that the size of the energy gap can be externally controlled. When the Zeeman field is applied, the energy band structures of the silylene occupy the spin fully polarized states near the two Dirac points of the Brillouin zone respectively, so that the spin of the current passing through the silylene two-end device can be fully polarized, and the purpose of controlling the current polarization direction is achieved. When the unpolarized current passes through the three-terminal device, currents with different spin polarization directions flow out of the other two electrodes respectively, and spin separation is achieved. However, the effect of the interface of the device and the electrode has a relatively significant effect on spin polarizability.
One of the research hot spots of condensed state physics is to explore the characteristics of quantum systems at the nanoscale, and search for new generation quantum electronic devices. With the development of spintronics, the effective manipulation of the degree of freedom of electron spin has become an important point of attention in the physical world and the material world. The quantum dot has artificial adjustability, and the quantum dot device manufactured by using the quantum dot has been remarkably developed, and is a hot spot direction for developing the nano electronic device at present. The spin properties of electrons in quantum dots play an important role, and the use of spin of electrons in quantum dot devices for quantum information processing is considered to be one of the most promising directions for future quantum computers. A great deal of research on quantum dots was conducted in the 90 s of the last century. So far, quantum dots have become a standard technique for confining single electron charges. How long the electrons can be captured, as long as you would like. When an electron tunnels out of the quantum dot, the change in charge can be measured on the order of μs. It is very difficult to control individual spins and measure the spin of individual electrons compared to charge control, and fortunately, these techniques have been developed. The results indicate that one quantum dot can have one or two electrons confined; the spin energy of a single electron is regulated and controlled to be placed in a superposition state of an upward state and a downward state; the two spins can be modulated to interact to form an entangled state, such as spin singlet or spin triplet, the result of which can be measured by spins independent of each other. The ability to have complete control over the spin of electrons independent of each other allows us to study the single spin dynamics of the complete quantum mechanism in a solid state environment.
Quantum dots are solid artificial submicron structures, typically comprising 10 3 ~10 9 Atoms and a substantial number of electrons. In semiconductor quantum dots, all but a few free electrons are tightly bound, varying from zero to thousands. Firstly, each electron in a quantum dot whose spin is directly affected by the external magnetic field applied in the manner of zeeman energy, and secondly, the principle of bery incompatibility prohibits two electrons having the same spin direction from occupying the same orbit, so that different electrons enter different orbits, which generally results in different energy states having different energies. Finally, coulomb interactions can lead to energy differences (energy exchanges) between the different energy states of the symmetric and antisymmetric orbital wave functions. Because quantum dots have the characteristics of quantized energy level, controllable number of electron beams, controllable energy level and the like, a single electron spin filtering method based on quantum dots is provided.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: aiming at the problems in the background technology, the single-electron spin filter and the single-electron spin filtering method based on the quantum dots are provided, the quantum dot structure based on the single-electron transistor is adopted, and an external regulation method is adopted, so that spin-unpolarized electrons are changed into spin-polarized electrons after passing through the single-electron transistor, and the spin direction of the electrons can be judged and counted.
The technical scheme adopted by the invention is as follows: a single electron spin filter based on quantum dots, which mainly comprises a single electron transistor, wherein the single electron transistor is provided with a coulomb island, a source electrode, a drain electrode and a grid electrode, the quantum dots are used as the coulomb island of the single electron transistor, the coulomb island is connected with the source electrode and the drain electrode through tunneling barriers, and the coulomb island is coupled with the grid electrode in a capacitive form; the single electron transistor is placed in a vertical magnetic field, the drain electrode output end of the single electron transistor is connected with the spintronic reading circuit, and the spintronic reading circuit is placed in a horizontal nonuniform magnetic field.
In the above technical scheme, the quantum dots are graphene quantum dots.
In the above technical solution, the coulomb island, the source electrode, the drain electrode and the gate electrode of the single-electron transistor are integrally arranged on the silicon dioxide substrate formed on the surface of the silicon substrate, and the coulomb island, the tunneling barrier, the source electrode, the drain electrode and the gate electrode are redeposited with the alumina protective layer.
According to the single-electron spin filter method based on the quantum dot, the quantum dot is used as a coulomb island of a single-electron transistor, the discrete energy level of the single-electron spin filter method generates the Zeeman splitting in a vertical magnetic field, and the split energy level has spin correlation and spin filter effect.
In the technical scheme, the source bias voltage, the drain bias voltage and the grid voltage of the single-electron transistor are regulated to enable the quantum dot Zeeman split energy level of a certain specific spin direction with upward spin or downward spin to be positioned in the source bias window and the drain bias window, so that a single-electron transport channel of the single-electron transistor is formed, and single-electron spin filtration is completed; the source bias voltage, the drain bias voltage and the gate voltage of the single-electron transistor are regulated, so that the quantum dot zeeman splitting energy level is not located in the source bias window and the drain bias window, and the electron channel of the single-electron transistor is closed, and therefore electrons are not spin polarized;
in the technical scheme, the emergent electrons subjected to spin polarization through the single-electron transistor deflect in the movement direction under the action of the horizontal nonuniform magnetic field, so that separation and detection are realized; electrons with opposite spin directions have opposite magnetic moment orientations, and when moving in a horizontal nonuniform magnetic field, the movement tracks are separated due to different stresses and reach two different detectors.
In the technical scheme, the charging energy of the single-electron transistor is larger than the Zeeman splitting energy, and the Zeeman splitting energy is larger than the heat energy.
In the technical scheme, the source bias voltage and the drain bias voltage are regulated so that at most only one Zeeman split energy level can be contained in a bias voltage window; by adjusting the source, drain bias and gate voltage, free electrons on the coulomb island can be depleted and then single electrons can be injected to complete single electron spin polarization.
In the technical scheme, the source bias voltage and the drain bias voltage are unchanged, and only the grid voltage is changed, so that a certain energy level which is taken as an electron channel and has a specific spin direction can be adjusted to move up and down, and the electron channel is opened or closed.
In the technical scheme, the source bias voltage and the drain bias voltage are unchanged, and the energy levels of adjacent quantum dots with different spin directions can be regulated only by changing the gate voltage and sequentially appear in the bias window to become spin polarized electron channels.
In the technical scheme, the emergent electrons subjected to spin polarization through the single-electron transistor deflect in the movement direction under the action of the horizontal non-uniform magnetic field, so that separation is realized and the emergent electrons can be detected.
The invention realizes spin polarization of single incident electron and readout of spin polarized emergent electron, is beneficial to design of spin electron device with fast data processing speed, low power consumption and good stability, and has wide application.
Drawings
FIG. 1 is a single electron transistor model of a single quantum dot; in fig. 1, 1 is a source, 2 is a drain, 3 is a gate, 4 is a coulomb island, 11 is a tunneling barrier between the source and the coulomb island, 21 is a tunneling barrier between the drain and the coulomb island, and 31 is a coupling capacitance between the gate and the coulomb island;
FIG. 2 is a schematic diagram of a quantum dot based spin filter; in FIG. 2, 51 and 52 are the protection resistors of the single electron transistor, 52 and 53 form a voltage divider of the source-drain input voltage, and the single electron transistor is placed in a vertical magnetic field B 1 In which a spintronic readout circuit is placed in a horizontal inhomogeneous magnetic field B 2 In (a) and (b);
FIG. 3 is a schematic diagram of the principle of using a few electron quantum dots as a bipolar spin filter; in fig. 3, 12 is the source fermi level, 22 is the drain fermi level, and 41 and 42 are the zeeman split levels of the coulomb island;
FIG. 4 is a schematic diagram of the principle of achieving different spin polarizations by adjusting the gate voltage; in fig. 4, (a) is that free electrons on the quantum dot are depleted, (b) is that one spin-up energy level in the quantum dot is located in the source drain bias window, and (c) is that one spin-down energy level in the quantum dot is located in the source drain bias window;
fig. 5 is a schematic diagram of the principle of quantum dot based spin filtration.
Detailed Description
Referring to the drawings, the single-electron spin filter based on the quantum dots is mainly composed of a single-electron transistor, wherein the single-electron transistor is provided with a coulomb island, a source electrode, a drain electrode and a grid electrode, the quantum dots are used as the coulomb island of the single-electron transistor, the coulomb island is connected with the source electrode and the drain electrode through tunneling barriers, and the coulomb island is coupled with the grid electrode through a capacitance mode; the single-electron transistor is arranged in a vertical magnetic field, the drain electrode output end of the single-electron transistor is connected with a spin electron reading circuit, the spin electron reading circuit is arranged in a horizontal nonuniform magnetic field, the quantum dots adopt graphene quantum dots, the coulomb island, the source electrode, the drain electrode and the grid electrode of the single-electron transistor are integrally arranged on a silicon dioxide substrate formed on the surface of a silicon substrate, and an alumina protective layer is redeposited on the coulomb island, the tunneling barrier, the source electrode, the drain electrode and the grid electrode.
According to the single-electron spin filtering method based on the single-electron spin filter, the quantum dots are used as coulomb islands of the single-electron transistor, the discrete energy levels of the coulomb islands are subjected to Zeeman splitting in a vertical magnetic field, the split energy levels have spin correlation, the single-electron spin filter effect is achieved, the source bias voltage, the drain bias voltage and the grid voltage of the single-electron transistor are regulated, the quantum dot Zeeman split energy levels in a certain specific spin direction with upward spin or downward spin are located in the source bias window and the drain bias window, a single-electron transport channel of the single-electron transistor is formed, and the single-electron spin filtering is completed; the source bias voltage, the drain bias voltage and the gate voltage of the single-electron transistor are regulated, so that the quantum dot zeeman splitting energy level is not located in the source bias window and the drain bias window, an electron channel of the single-electron transistor is closed, electrons are not spin polarized, the spin polarized emergent electrons are generated through the single-electron transistor, and the movement direction is deflected under the action of a horizontal nonuniform magnetic field, so that separation and detection are realized; electrons with opposite spin directions and opposite magnetic moment orientations, when the electrons move in a horizontal nonuniform magnetic field, the movement tracks are separated due to different stresses and reach two different detectors, the charging energy of a single-electron transistor is larger than the Zeeman splitting energy, the Zeeman splitting energy is larger than the heat energy, and the bias voltages of a source and a drain are regulated so that at most only one Zeeman splitting energy level can be contained in a bias window; the free electrons on the coulomb island can be exhausted by adjusting the source bias voltage, the drain bias voltage and the grid voltage, then single electrons are injected, single electron spin polarization is completed, the source bias voltage and the drain bias voltage are unchanged, only the grid voltage is changed, a certain energy level which is taken as an electron channel and has a specific spin direction can be adjusted to move up and down, the opening or closing of the electron channel is realized, the source bias voltage and the drain bias voltage are unchanged, only the grid voltage is changed, adjacent quantum dot energy levels with different spin directions can be adjusted, and the adjacent quantum dot energy levels sequentially appear in a bias window to become the spin polarized electron channel.
In the method, the emitted electrons subjected to spin polarization through the single-electron transistor deflect in the movement direction under the action of the horizontal nonuniform magnetic field, so that separation is realized and the emitted electrons can be detected.
According to the quantum dot-based single-electron spin filter, two electrons with the same spin direction of the quantum dot are forbidden to occupy the same Zeeman split energy level according to the British incompatibility principle, so that the electrons enter the orbit of a specific spin direction and are spin polarized.
The spin polarized electrons are separated in a horizontal non-uniform magnetic field to reach different detectors due to different magnetic moment orientations, and the spin state detection is completed.
To achieve single electron spin filtration, the following three steps can be employed:
(1) Depleting free electrons on the coulomb island of the single electron transistor;
(2) Injecting one electron into the single electron transistor coulomb island;
(3) The spin state of the outgoing electrons is measured.
If the zeeman splitting exceeds the charge energy, the electron transport through the quantum dot is spin polarized, and the quantum dot can be regarded as a spin filter. As shown in fig. 3, if only a single electron is spin-up in the source-drain bias window, the electron is spin-up polarized during transport where the electron is depleted and contains a free electron on the coulomb island.
As shown in fig. 4, in the transport process with one free electron and two free electrons on the coulomb island, if no excited state is allowed, since the electron channel already has one electron with spin up, only one electron with spin down is allowed to enter the electron channel according to the brix incompatibility principle, so that the outgoing electrons are spin down polarized. Thus, by adjusting the quantum dots to the relevant transport, the polarization of the spin filter can be electrically reversed.
The method of single electron spin filtration of the present invention is described in further detail below by way of one specific embodiment of the present invention, with reference to the accompanying drawings:
(1) A single electron transistor as shown in fig. 1 is used as a core component of the single electron spin filter, the source electrode and the drain electrode are coupled with the coulomb island through tunneling, and the gate electrode is coupled with the coulomb island through capacitance. As shown in fig. 2, the single electron transistor completes spin polarization of a single injected electron, and the spin state of an output electron is detected by a readout circuit.
(2) The source drain bias and gate voltage are adjusted as shown in fig. 4 (a), since the quantum dot spin up level 41 and spin down level 42 are both above the electron pool fermi level 12 of the source 1, there is no electron on the quantum dot.
(3) The gate applies a positive voltage pulse, as shown in fig. 4 (b), which adjusts the quantum dot spin up energy level 41 into the source drain bias window, while the spin down energy level 42 is still above the electron library fermi level 12 of the source 1. Thus, from an energy point of view, an electron is allowed to tunnel above the energy level 41 of the quantum dot, which electron is spin-polarized upwards.
(4) If a large positive voltage pulse is applied to the gate, as shown in fig. 4 (c), the quantum dot spin down energy level 42 is tuned into the source drain bias window, while the spin up energy level 41 is below the electron pool fermi level 22 of the drain 2. Thus, from an energy perspective, an electron is allowed to tunnel above the energy level 42 of the quantum dot, which electron is spin-polarized downward.
(5) After a period of time, electrons entering the quantum dots will tunnel to the drain electrode 2, and as shown in fig. 5, the electrons will be subjected to different forces due to different spin directions under the action of a magnetic field, and have different motion tracks, and are detected by the detector.
Quantum dots are a conventional and versatile system, with many different materials and morphologies of quantum dots. The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement the same according to the content of the present invention, and are not intended to limit the scope of the present invention. All other corresponding changes and modifications made according to the technical proposal and the technical conception of the invention are covered in the protection scope of the invention.
Claims (4)
1. A single electron spin filter based on quantum dots, characterized in that: the main component is a single-electron transistor, the single-electron transistor is provided with a coulomb island, a source electrode, a drain electrode and a grid electrode, the quantum dot is used as the coulomb island of the single-electron transistor, the coulomb island is connected with the source electrode and the drain electrode through tunneling potential barriers, and the coulomb island is coupled with the grid electrode in a capacitive mode; the single-electron transistor is arranged in a vertical magnetic field, the drain electrode output end of the single-electron transistor is connected with the spintronic reading circuit, and the spintronic reading circuit is arranged in a horizontal nonuniform magnetic field;
adjusting source and drain bias voltages and gate voltage of the single-electron transistor to enable quantum dot Zeeman splitting energy level of a certain specific spin direction with spin up or spin down to be located in source and drain bias windows, forming a single-electron transport channel of the single-electron transistor, and completing single-electron spin filtration; the source bias voltage, the drain bias voltage and the gate voltage of the single-electron transistor are regulated, so that the quantum dot zeeman splitting energy level is not located in the source bias window and the drain bias window, and the electron channel of the single-electron transistor is closed, and therefore electrons are not polarized by spin.
2. A single electron spin filter method using the quantum dot-based single electron spin filter of claim 1, characterized in that: the quantum dots are used as coulomb islands of single-electron transistors, the discrete energy levels of the coulomb islands are subjected to Zeeman splitting in a vertical magnetic field, and the split energy levels have spin correlation and spin filtering effect;
the outgoing electrons which are subjected to spin polarization through the single-electron transistor deflect in the movement direction under the action of a horizontal nonuniform magnetic field, so that separation and detection are realized; electrons with opposite spin directions have opposite magnetic moment orientations, and when moving in a horizontal nonuniform magnetic field, the movement tracks are separated due to different stresses and reach two different detectors.
3. The single electron spin filtration method of claim 2, wherein: the source bias voltage and the drain bias voltage are regulated so as to only accommodate one Zeeman split energy level at most and be in a bias voltage window; by adjusting the source, drain bias and gate voltage, free electrons on the coulomb island can be depleted and then single electrons can be injected to complete single electron spin polarization.
4. The single electron spin filtration method of claim 2, wherein: the source bias voltage and the drain bias voltage are unchanged, and only the grid voltage is changed, so that a certain energy level which is taken as an electron channel and has a specific spin direction can be adjusted to move up and down, and the electron channel is opened or closed; the source-drain bias voltage is unchanged, only the gate voltage is changed, and the energy levels of adjacent quantum dots with different spin directions can be regulated to sequentially appear in a bias window to become spin polarized electron channels.
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| CN108470216A (en) * | 2018-01-23 | 2018-08-31 | 湖北工业大学 | Fermi's lepton quantum bit based on autoexcitation spin single electron Electromagnetic Environmental Effect transistor |
| CN108491933B (en) * | 2018-01-23 | 2022-12-16 | 湖北工业大学 | Doped element nanowire multi-type mutual-embedding silicon carbide transistor |
| CN108344956B (en) * | 2018-01-23 | 2020-06-12 | 湖北工业大学 | Application circuit based on self-excitation single-electron spin electromagnetic transistor |
| KR102007391B1 (en) * | 2018-11-02 | 2019-08-06 | 브이메모리 주식회사 | Variable low resistance line non-volatile memory device and operating method thereof |
| CN109683027A (en) * | 2019-01-23 | 2019-04-26 | 中国科学技术大学 | Measuring device and preparation method thereof for self-organizing germanium silicon nanowires |
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| CN115763610A (en) * | 2022-11-07 | 2023-03-07 | 隆基绿能科技股份有限公司 | High performance ferroelectric tunnel junctions and devices including the same |
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