CN108344956B - Application circuit based on self-excitation single-electron spin electromagnetic transistor - Google Patents
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Abstract
The invention discloses an application circuit based on a self-excitation single-electron spin electromagnetic transistor, which comprises a self-excitation single-electron spin electromagnetic transistor and a loop resistor R1The source electrode, the drain electrode and the source drain electrode voltage V of the self-excitation single electron spin electromagnetic transistords1Connection, grid and grid voltage VgThe right side of the squit ring forms mutual inductance with the radio frequency circuit, and the left side of the squit ring passes through a grid voltage VgAnd the voltage V to be measuredsThe self-excitation single-electron spin electromagnetic transistor comprises a substrate provided with a nano silicon carbide thin film structure, a source electrode, a drain electrode and a grid electrode, wherein the nano silicon carbide thin film structure is formed by mutually embedding layered nano silicon carbide single crystal thin films, two ends of the nano silicon carbide thin film structure are respectively contacted with the source electrode and the drain electrode to form a source drain electrode active region, an insulating layer and a contact metal layer are sequentially arranged on the upper part of the nano silicon carbide thin film structure, and the grid electrode is led out from the contact metal layer. The invention has the characteristics of high sensitivity and accurate measurement.
Description
Technical Field
The invention belongs to the field of quantum science and technology, relates to an application circuit of a quantum interference device, and particularly relates to an application circuit based on a self-excitation single-electron spin electromagnetic transistor.
Background
Since the discovery by the netherlands scientists heck-kandelin-Onnes (Heike Kamerlingh ons) et al in 1911 that individual metals exhibit a superconducting phenomenon of zero resistance and zero voltage at low temperatures close to absolute zero, human research into superconductors has been spotlighted, the most important discovery being Josephson, a physicist in uk in 1962, brianddavid, which discovered Josephson junctions later named by their name. Josephson calculated the tunneling effect of the superconducting junction and concluded that: if the two superconductors are close enough, the electron pair can form a superconducting current through a very thin insulating layer between the superconductors, and no voltage appears on the superconducting junction; if a voltage is applied across the superconducting junction, a high frequency superconducting current is generated. Josephson received a 1973 s prize in norbel's physics due to the prediction of tunneling superconducting currents. Superconducting quantum interference devices (squids) were invented using the Josephson junction. Nowadays, squids are provided in high-precision magnetic field testing equipment in various industries. This device is a test device with extremely high sensitivity to magnetic induction. However, the operation condition is harsh, namely the operation is carried out at low temperature, and although a high-temperature superconductor is adopted at present, the operation is still in a liquid nitrogen temperature region. This presents difficulties in testing magnetic field strength at room temperature requiring the operation of quantum interference devices, necessitating the discovery and manufacture of new devices that can be applied to testing magnetic field phenomena at room temperature.
The use of Josephson junctions to create superconducting weak junctions to produce sensitive electronic measurement devices has been an active topic. The Squids can be divided into two types according to the structure or working mode: namely a direct current superconducting quantum interferometer, dc-squid for short, the device comprises two superconducting rings of Josephson junctions; the other is a single Josephson junction superconducting ring working in the radio frequency range of 10MHz to 100GHz, which is provided with a radio frequency resonance circuit coupled with the superconducting ring, and the superconducting ring is called a radio frequency superconducting quantum interferometer, and is abbreviated as rf-sqiuds. Superconducting quantum interferometers are extremely sensitive flux-to-voltage converters. When external magnetic flux passes through the squid ring, the state of the squid is changed, and the change of the magnetic flux is converted into a voltage signal through an electronic circuit and is output, so that the change of the external magnetic flux is detected. Its sensitivity is the most sensitive magnetic flux detection technique beyond spin quantum interference transistors. Although the detection technology of a liquid nitrogen temperature region is realized by adopting the high-temperature superconductor to manufacture the squid, the high-temperature superconductor is unstable and has a complex manufacturing process, equipment still appears clumsy and expensive in operation, and the development of the spin quantum interference transistor at room temperature becomes a great demand.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides an application circuit based on a self-excited single-electron spin electromagnetic transistor, and a test circuit is constructed by the self-excited single-electron spin electromagnetic transistor, so that the sensitivity is high, and the measurement accuracy can be greatly improved.
In order to achieve the above purpose, the invention provides a self-excited single electron spin electromagnetic transistor, which is characterized by comprising a self-excited single electron spin electromagnetic transistor and a loop resistor R1Spin of compositionA quantum interference transistor (squit) ring, wherein the voltage V of the source electrode, the drain electrode and the source drain electrode of the self-excitation single electron spin electromagnetic transistords1Connection, grid and grid voltage VgThe right side of the spin quantum interference transistor ring forms mutual inductance with a radio frequency circuit, and the left side of the spin quantum interference transistor ring passes through a grid voltage VgAnd the voltage V to be measuredsThe self-excited single-electron spin electromagnetic transistor comprises a substrate provided with a nano silicon carbide thin film structure, a source electrode, a drain electrode and a grid electrode, wherein the nano silicon carbide thin film structure is formed by mutually embedding layered nano silicon carbide single crystal thin films, two ends of the nano silicon carbide thin film structure are respectively contacted with the source electrode and the drain electrode to form a source and drain electrode active region, an insulating layer and a contact metal layer are sequentially arranged on the upper part of the nano silicon carbide thin film structure, and the grid electrode is led out from the contact metal layer.
Further, the radio frequency circuit comprises a pulse voltage VpCapacitor C, resonant load resistor R and inductor LTAnd a radio frequency bias current Irf-biasThe radio frequency circuit provides energy to the squit, the bias rf-squit.
Furthermore, the radio frequency circuit comprises a self-excitation single-electron spin electromagnetic transistor, a capacitor C, a resonant load resistor R and an inductor LTAnd a radio frequency bias current Irf-biasThe grid of the self-excitation single electron spin electromagnetic transistor is connected with a grid voltage VgTSource and drain connected source and drain voltage VdsTThe pulse voltage source and the bias current are replaced by a self-excited single-electron spin electromagnetic transistor.
Further, the gate voltage V of the self-excited single electron spin electromagnetic transistorgAnd source-drain voltage V in the effective interval above the threshold valueds1To maintain the interference of the spin electron current of the source and drain of the transistor.
Further, the voltage V to be measuredsAnd an inductance LSLoad resistance RsForming a loop to prevent interference of the resonant circuit, so that at Vp high or very high frequencies, the component is short-circuited and the load is droppedThe load resistance Rs.
Further, the radio frequency circuit further includes an operating circuit formed by an integrated operational amplifier and a diode.
Furthermore, the nano silicon carbide film structure is formed by a multi-type nano silicon carbide single crystal, and a multi-type layer mutual embedding structure is formed.
Furthermore, the middle layer of the nano silicon carbide film structure is a pure silicon carbide single crystal film, and the other layers are light-doped silicon carbide single crystal films.
Further, the nano silicon carbide single crystal comprises one or more of 4H, 6H, 3C, 15R and quasi-crystalline silicon carbide.
Furthermore, the thickness of each layer of nano silicon carbide single crystal film in the nano silicon carbide film structure is 1-100 nm.
Furthermore, the nanometer silicon carbide single crystal film is doped in a P type or an N type, and respectively forms a nanowire heterojunction.
The application circuit based on the self-excitation single-electron spin electromagnetic transistor is realized by the self-excitation single-electron spin electromagnetic transistor, the self-excitation single-electron spin electromagnetic transistor is provided with a nanowire or a band which is formed by a nano silicon carbide thin film structure formed by mutually embedding layered nano silicon carbide single crystal thin films and is used as an active region of the transistor, and the source electrode and the drain electrode use Pd as contact metal to form a Schottky barrier, wherein tunneling occurs. At room temperature, Ramsey interference experiment test is carried out on a loop of a transistor loop to obtain that the coherent time exceeds 150ms, and Rabi resonance test is carried out on the other loop of the transistor with the coherent time of 156ms, so that after the threshold value of the grid voltage exceeds, the application circuit test voltage based on the self-excitation single-electron spin electromagnetic transistor has the characteristics of high sensitivity and accurate measurement.
Drawings
Fig. 1 is a circuit diagram of a first embodiment of an application circuit based on a self-excited single-electron spin electromagnetic transistor.
Fig. 2 is a circuit diagram of a second embodiment of the application circuit based on the self-excited single-electron spin electromagnetic transistor.
Fig. 3 is a schematic structural diagram of the self-excited single electron spin-based electromagnetic transistor in fig. 1 and 2.
Fig. 4 is a circuit diagram of the direct current of a quantum interference transistor based on a self-excited single electron spin electromagnetic transistor.
FIG. 5 is a schematic diagram of Ramsey interference experimental test results of a self-excited single electron spin electromagnetic transistor.
FIG. 6 is a graph showing the results of the Rabi resonance test of a self-excited single electron spin electromagnetic transistor.
In the figure, a substrate 1, a nanometer silicon carbide thin film structure 2, a nanometer silicon carbide single crystal thin film 2-1, a source electrode 3, a drain electrode 4, an insulating layer 5, a contact metal layer 6 and a grid electrode 7.
Detailed Description
The invention is described in further detail below with reference to the following figures and examples, which should not be construed as limiting the invention.
The invention provides an application circuit based on a self-excitation single-electron spin electromagnetic transistor, which comprises the self-excitation single-electron spin electromagnetic transistor and a loop resistor R1A source electrode, a drain electrode and a source drain electrode voltage V of the self-excitation single electron spin electromagnetic transistords1Connection, grid and grid voltage VgThe right side of the squit ring forms mutual inductance with the radio frequency circuit, and the left side of the squit ring passes through a grid voltage VgAnd the voltage V to be measuredsAnd (4) connecting. Voltage V to be measuredsAnd an inductance LSLoad resistance RsForming a loop. Wherein, T1Is a transistor, VgIs the gate voltage, S and D are the source and drain electrodes of the transistor, respectively, VdsIs the source-drain voltage, R1Is a loop resistance that is very small and much smaller than the resistance r (not shown) between the nanowire resistance and the source and drain in the transistor. Gate voltage V of self-excited single electron spin electromagnetic transistorgAnd source-drain voltage V in the effective interval above the threshold valueds1To maintain the interference of the spin electron current of the source and drain of the transistor. Right side of the figure isThe frequency circuit part, which is a tank circuit. It is current-coupled to the single transistor to generate a voltage response through the RF voltage VpPower is supplied to produce a magnetic flux phi and the mutual inductance M couples in the single transistor loop to power the transistor. The two circuits have a coupling that is the resonant frequency generated by the resonant circuit loop and that is the same as the resonant frequency of the squit loop.
In a first embodiment of the invention, as shown in fig. 1, the rf circuit comprises a pulse voltage VpCapacitor C, resonant load resistor R and inductor LTAnd a radio frequency bias current Irf-bias。
Inductor L is shown on the right side of the figureTAnd a capacitor C forming a resonant circuit with a radio-frequency pulse voltage VpAnd a bias current Irf-biasAll loads fall on resistor R; the middle part is a loop circuit formed by a self-excited single-electron spin electromagnetic transistor and a resistor R1, and the gate of the transistor is directly biased by direct current-gate voltage VgThen, the test voltage is connected, which is an AC signal. In order to prevent the interference of the resonance loop on the right, an inductor L is arrangedsAt V to makepAt high or very high frequencies, this part can be short-circuited and the load can be dropped at RsThe above. M is the mutual inductance between the liquid (spin quantum interference resonator) loop and the resonant tank. An integrated operational amplifier and a diode are connected after the resonant tank as an operating circuit (not shown). Radio frequency current provides energy for the squit through the resonant circuit, namely bias rf-squit, and the squit ring can also transmit an external magnetic field signal or a voltage signal of a signal to be detected to the resonant circuit in the process of drawing the energy from the resonant circuit, so that the magnetic field signal or the voltage signal to be detected can be taken out through the resonant circuit. And then obtaining a voltage signal of the measured magnetic field after high-frequency amplification and detection. The output signal is fed back to the resonant circuit by the locking circuit, so that a compensation magnetic field is generated in the rf-squit to form a magnetic flux locking formula, and the output voltage and the external magnetic flux are in a linear relation. The current required to be superimposed here is less than the threshold current of the nanowire silicon carbide transistor. To prevent the transistor from breaking down.
In a second embodiment of the present invention, as shown in fig. 2, the functions of the pulse voltage source and the bias current in the rf circuit of the first embodiment are replaced by another self-excited one-electron spin solenoid loop, which generates a pulse voltage using the source-drain voltage and generates an rf current instead of the pulse voltage and the rf current. The radio frequency circuit comprises a self-excitation single-electron spin electromagnetic transistor, a capacitor C, a resonant load resistor R and an inductor LTAnd a radio frequency bias current Irf-biasThe grid of the self-excitation single electron spin electromagnetic transistor is connected with a grid voltage VgTSource and drain connected source and drain voltage VdsT。
The invention is realized based on a self-excitation single electron spin electromagnetic transistor, the structure of the self-excitation single electron spin electromagnetic transistor is shown in figure 3, and the self-excitation single electron spin electromagnetic transistor comprises a substrate 1, wherein a nano silicon carbide thin film structure 2, a source electrode 3, a drain electrode 4 and a grid electrode 7 are arranged on the substrate 1. Two ends of the nano silicon carbide film structure 2 are respectively contacted with the source electrode 3 and the drain electrode 4 to form a source and drain electrode active region. The nanometer silicon carbide film structure 2 is formed by mutually embedding layered nanometer silicon carbide single crystal films 2-1. The upper part of the nano silicon carbide film structure 2 is sequentially provided with an insulating layer 5 and a contact metal layer 6, and a grid 7 is led out from the contact metal layer 6.
The nanometer silicon carbide film structure 2 is formed by a multi-type nanometer silicon carbide single crystal which comprises one or more of 4H, 6H, 3C, 15R and quasi-crystalline silicon carbide. One or more nano silicon carbide single crystals are mutually superposed to form a multi-type layer mutual embedding structure. The thickness of each layer of nano silicon carbide single crystal film 2-1 is 1-100 nm. The middle layer is a pure silicon carbide single crystal film, and the other layers are light doped silicon carbide single crystal films. The nanometer silicon carbide single crystal film 2-1 is doped in a P type or an N type and respectively forms a nanowire heterojunction.
There are various embodiments of the nano-silicon carbide thin film structure 2, and several of them are listed below. 1) The nanometer silicon carbide film structure 2 is a three-layer structure, the first layer of nanometer silicon carbide single crystal film 2-1 and the third layer of nanometer silicon carbide single crystal film 2-1 are 6H-SiC films, heavy doping process treatment is carried out, and the second layer of nanometer silicon carbide single crystal film 2-1 is a pure 4H-SiC silicon carbide film. 2) The nanometer silicon carbide film structure 2 is a three-layer structure, the first layer of nanometer silicon carbide single crystal film 2-1 and the third layer of nanometer silicon carbide single crystal film 2-1 are 4H-SiC films, light doping process treatment is carried out, and the second layer of nanometer silicon carbide single crystal film 2-1 is a pure 15R silicon carbide film. 3) The nanometer silicon carbide film structure 2 is a three-layer structure, the first layer of nanometer silicon carbide single crystal film 2-1 and the third layer of nanometer silicon carbide single crystal film 2-1 are 4H-SiC films, light doping process treatment is carried out, and the second layer of nanometer silicon carbide single crystal film 2-1 is a pure 3C silicon carbide film. 4) The nanometer silicon carbide film structure 2 is a three-layer structure, the first layer, the second layer and the third layer of nanometer silicon carbide single crystal film 2-1 are all 3C films, wherein the first layer and the third layer are doped with P, N elements to form N-type doping, and the second layer of nanometer silicon carbide single crystal film 2-1 is a pure 3C silicon carbide pure semiconductor film. 5) The nanometer silicon carbide film structure 2 is a three-layer structure, the second layer of nanometer silicon carbide single crystal film 2-1 is a quasi-crystalline film doped with B elements, the first layer of silicon carbide single crystal film 2-1 and the third layer of nanometer silicon carbide single crystal film 2-1 are 3C silicon carbide films, and B elements are lightly doped to form P-type doping.
When the quantum interference transistor is constructed by adopting the self-excited spinning single electron electromagnetic transistor: firstly, the specific parameter ranges of the energy and the power of a tested signal are determined, and the parameters of the grid capacitance and the source and drain inductance of a transistor or the inductance formed by the source, the drain and the nanowire silicon carbide are selected. Other passive components such as resistors, capacitors and inductors, which take corresponding values, are fabricated on a substrate. The transistor resonant circuit formed in the way has the characteristic of harmonic oscillation along with the source-drain voltage change and the source-drain current pulse under the grid voltage pulse, so that resonant current induction is formed in the middle transistor loop, and when the energy of the resonant circuit is received, a new induction feedback is formed by being disturbed by an external magnetic field and returns to the transistor resonant circuit on the right side, namely the energy storage tank, the voltage or magnetic field signal of the energy storage tank is taken out, and the voltage signal of the magnetic field to be detected is obtained after high-frequency amplification and detection. The locked loop feeds back the output signal to the resonant loop, thereby generating a compensating magnetic field in the rf-squit to form a locked mode. At the moment, the output voltage and the external magnetic flux have a linear relation, so that the magnetic field measurement can be more accurately carried out.
On the same SOI substrate 1, two identical transistor modules with the interval of 500nm are simultaneously prepared, the source electrode and the drain electrode use the same power supply, the same grid electrode is connected with the similar grid voltage, and a loop is formed, as shown in figure 4. Two self-excited spin single electron electromagnetic transistors sharing a DC gate voltage source VgCommon source and drain to form a symmetrical loop circuit, commonly known as a self-excited spin single electron electromagnetic transistor loop, with a gate voltage VgWhen the output leakage current exceeds the threshold value and is kept in a certain range, the output leakage current of the transistor is in resonance change along with the input leakage voltage, clockwise and anticlockwise circulating loop current is formed, and interference current is formed at the output end, namely the drain ends of the two transistors.
The nanowire or strip formed by the nano-silicon carbide thin film structure 2 in the transistor serves as the transistor active region. The source and drain electrodes use Pd as a contact metal to form a schottky barrier in which tunneling occurs. At room temperature, one of them is first connected to VdsApplying a gate voltage VgThe I-V curve is the same as the I-V curve of the single transistor described above. The other one was tested in turn. The same phenomenon occurs. At room temperature, the I-V characteristics of both transistors are now tested. The source-drain I-V characteristics of the two transistors are tested under the same or close source-drain voltage by applying the same or close gate voltage, and an interference phenomenon occurs. Forming an interference constant amplitude oscillation current. Interference occurs at the same source-drain voltage. On this basis, a magnetic field H is introduced through the transistor loop. As the magnetic induction B increases, the current exhibits an interference phenomenon in accordance with the applied voltage.
After applying source-drain voltage, and after a certain threshold of gate voltage, the test I-V characteristic appears to be circulating current clockwise and counterclockwise. This is the purple day lily current. And preparing two identical transistors, using the same power supply for the source and the drain, adding the similar grid voltage, testing the I-V characteristics of the source and the drain, and generating an interference phenomenon. Forming a constant amplitude oscillating current.
When the gate voltage of the self-excited spin single electron electromagnetic field effect transistor exceeds a threshold value, the source drain electrode I-V characteristic is as follows:
taking the case of the nano silicon carbide thin film structure 2 being a 6H-SiC/ 4H-SiC/ 6H-SiC structure as an example, considering that 1/2 electrons pass through the multi-type mutually embedded nanowire each time, the spintronic current of the low-doped or pure 4H-SiC multi-type crystal embedded between two n-type impurity doped multi-type 6H-SiC crystals in the active region nano silicon carbide wire between the source and the drain is taken as the following relationship between the macroscopic quantum bit phase difference between the 4H-SiC and the 6H-SiC on both sides:
wherein I is a spin electron current, IcIs the critical spin-electron current and is,
is the macroscopic quantum phase difference between the two 6H-SiC.
When the gate voltage exceeds the threshold value VgWhile a voltage V is applied to the source and drain electrodesdsPhase difference thereof and interelectrode voltage VdsAnd the gate voltage Vg is:
in the presence of an externally applied magnetic field,
wherein
Is the quantum wave function phase difference of the two sides of the potential barrier (two transistor ports), wherein d is the length of the 4H-SiC polytype in the nanowire, and H is the external magnetic field. Lambda [ alpha ]wireThe magnetic field penetrates the width of 6H-SiC; c is the speed of light and c is the speed of light,
the light speed of the silicon carbide medium, n is the density of the spin electron pairs, and t is the time.
Rf-squit operating in a no-return hysteresis mode, total flux Φ through the quantum interference transistor ring being dependent on the applied flux ΦeMonotonic non-linear increase, d phi/d phieIs periodically changed with a period of one quantum magnetic flux phi0. The total flux equation is:
Φ＝Φe-LsIcsin(2πΦ/Φ0)
there is an analytical solution to this equation:
in the above formula, Mn (β)L) Expressed as a first-type Bessel function Jn (x):
the current is as follows:
I＝ICsin[(2π/Φ0)(Φdc+Φrfsin(ωrft))]2πLIC<<Φ0
z is the impedance of the resonant tank, M ═ k (L)SLT)1/2Is the mutual inductance of the squit loop and the resonant tank.
Z＝RT+i[ωrf(LT-M2/LS)-1/ωrfCT]
The relation between the resonant circuit voltage and the IC is
Therefore, the magnetic flux voltage is converted into VΦ
k is the coupling coefficient of squit and the resonant tank, Q is the quality factor of the resonant tank, βLInductance parameter, ω, being rf-squitrfFor the operating frequency of rf-squit, it can be easily seen that the measured voltage signal is a function of k2QβLωrfLTIncreasing and increasing, inversely proportional to M, the higher the sensitivity of the corresponding squit.
Ramsey interferometric testing of one of the transistor loop loops of the 50 samples at room temperature gave coherence times in excess of 150ms, as shown in fig. 5. The Rabi resonance test was performed on another transistor loop of 50 samples with a coherence time of 156ms, as shown in fig. 6. These results are shown for two samples selected after the test was performed on 50 samples.
The test result shows that after the threshold value of the grid voltage exceeds, the relation between the source-drain voltage and the leakage current presents an interference phenomenon.
Although the preferred embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and those skilled in the art can make various changes and modifications within the spirit and scope of the present invention without departing from the spirit and scope of the appended claims.
Claims (10)
1. An application circuit based on a self-excited single-electron spin electromagnetic transistor is characterized in that: comprising a self-excited single electron spin electromagnetic transistor and a loop resistor R1The source electrode, the drain electrode and the source drain electrode voltage V of the self-excitation single electron spin electromagnetic transistords1Connection, grid and grid voltage VgThe right side of the spin quantum interference transistor ring forms mutual inductance with a radio frequency circuit, and the left side of the spin quantum interference transistor ring passes through a grid voltage VgAnd the voltage V to be measuredsThe self-excited single-electron spin electromagnetic transistor comprises a substrate (1) provided with a nano silicon carbide thin film structure (2), a source electrode (3), a drain electrode (4) and a grid electrode (7), wherein the nano silicon carbide thin film structure (2) is formed by mutually embedding layered nano silicon carbide single crystal thin films (2-1), two ends of the nano silicon carbide thin film structure (2) are respectively contacted with the source electrode (3) and the drain electrode (4) to form a source drain electrode active region, an insulating layer (5) and a contact metal layer (6) are sequentially arranged on the upper portion of the nano silicon carbide thin film structure (2), and the grid electrode (7) is led out from the contact metal layer (6).
2. The application circuit based on the self-excited single-electron spin electromagnetic transistor according to claim 1, characterized in that: the radio frequency circuit comprises a pulse voltage VpCapacitor C, resonant load resistor R and inductor LTAnd a radio frequency bias current Irf-bias。
3. The application circuit based on the self-excited single-electron spin electromagnetic transistor according to claim 1, characterized in that: the radio frequency circuit comprises a self-excitation single-electron spin electromagnetic transistor, a capacitor C, a resonant load resistor R and an inductor LTAnd a radio frequency bias current Irf-biasSelf-excitation ofGrid-connected grid voltage V of excited single electron spin electromagnetic transistorgTSource and drain connected source and drain voltage VdsT。
4. The application circuit based on the self-excited single-electron spin electromagnetic transistor according to claim 1, characterized in that: the self-excited single electron spin electromagnetic transistor has a gate voltage VgAnd source-drain voltage V in the effective interval above the threshold valueds1To maintain the interference of the spin electron current of the source and drain of the transistor.
5. The application circuit based on the self-excited single-electron spin electromagnetic transistor according to claim 1, characterized in that: the voltage V to be measuredsAnd an inductance LSLoad resistance RsForming a loop.
6. The application circuit based on the self-excited single-electron spin electromagnetic transistor according to claim 1, characterized in that: the radio frequency circuit further comprises an operating circuit formed by an integrated operational amplifier and a diode.
7. The application circuit based on the self-excited single-electron spin electromagnetic transistor according to claim 2, characterized in that: the nano silicon carbide film structure (2) is formed by a multi-type nano silicon carbide single crystal to form a multi-type layer mutual embedding structure.
8. The application circuit based on the self-excited single-electron spin electromagnetic transistor according to claim 2, characterized in that: the middle layer of the nano silicon carbide film structure (2) is a pure silicon carbide single crystal film, other layers are light-doped silicon carbide single crystal films, and the thickness of each layer of nano silicon carbide single crystal film (2-1) in the nano silicon carbide film structure (2) is 1-100 nm.
9. The application circuit based on self-excited single-electron spin electromagnetic transistor according to claim 8, characterized in that: the nano silicon carbide single crystal comprises one or more of 4H, 6H, 3C, 15R and quasi-crystalline silicon carbide.
10. The application circuit based on self-excited single-electron spin electromagnetic transistor according to claim 9, characterized in that: the nanometer silicon carbide single crystal film (2-1) is doped in a P type or an N type, and a nanowire heterojunction is formed respectively.
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