AU2001269828A1 - Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry - Google Patents

Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry

Info

Publication number
AU2001269828A1
AU2001269828A1 AU2001269828A AU6982801A AU2001269828A1 AU 2001269828 A1 AU2001269828 A1 AU 2001269828A1 AU 2001269828 A AU2001269828 A AU 2001269828A AU 6982801 A AU6982801 A AU 6982801A AU 2001269828 A1 AU2001269828 A1 AU 2001269828A1
Authority
AU
Australia
Prior art keywords
circuitry
state change
shared
ferromagnetic memory
volatile ferromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001269828A
Inventor
Richard M. Lienau
James Craig Stephenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Estancia Ltd
Pageant Technologies Inc
Original Assignee
Estancia Ltd
Pageant Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Estancia Ltd, Pageant Technologies Inc filed Critical Estancia Ltd
Publication of AU2001269828A1 publication Critical patent/AU2001269828A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
AU2001269828A 2000-06-15 2001-06-15 Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry Abandoned AU2001269828A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21177900P 2000-06-15 2000-06-15
US60211779 2000-06-15
PCT/US2001/019151 WO2001097227A1 (en) 2000-06-15 2001-06-15 Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry

Publications (1)

Publication Number Publication Date
AU2001269828A1 true AU2001269828A1 (en) 2001-12-24

Family

ID=22788332

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001269828A Abandoned AU2001269828A1 (en) 2000-06-15 2001-06-15 Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry

Country Status (3)

Country Link
US (3) US7023727B2 (en)
AU (1) AU2001269828A1 (en)
WO (1) WO2001097227A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4720067B2 (en) * 2003-01-24 2011-07-13 Ｔｄｋ株式会社 Magnetic storage cell, magnetic memory device, and method of manufacturing magnetic memory device
US8519846B2 (en) * 2004-03-16 2013-08-27 Newage Industries, Inc. Tracking system for gamma radiation sterilized bags and disposable items
US7411803B1 (en) 2006-02-27 2008-08-12 Richard Lienau Resistive coupled hall effect sensor
US7796420B2 (en) * 2006-11-07 2010-09-14 Richard Lienau Coil sensor memory device and method
US8081507B2 (en) * 2008-09-25 2011-12-20 Richard Lienau Tri-state memory device and method
US8310861B2 (en) * 2008-09-30 2012-11-13 Micron Technology, Inc. STT-MRAM cell structure incorporating piezoelectric stress material
US7876603B2 (en) * 2008-09-30 2011-01-25 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
US8102700B2 (en) 2008-09-30 2012-01-24 Micron Technology, Inc. Unidirectional spin torque transfer magnetic memory cell structure
US7944738B2 (en) 2008-11-05 2011-05-17 Micron Technology, Inc. Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
US8553449B2 (en) 2009-01-09 2013-10-08 Micron Technology, Inc. STT-MRAM cell structures
US7957182B2 (en) * 2009-01-12 2011-06-07 Micron Technology, Inc. Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791604A (en) * 1984-02-15 1988-12-13 Joseph J. Bednarz Sheet random access memory
US5068826A (en) * 1990-01-18 1991-11-26 Microunity Systems Engineering Hall effect semiconductor memory cell
US5295097A (en) * 1992-08-05 1994-03-15 Lienau Richard M Nonvolatile random access memory
JP3298313B2 (en) * 1994-06-10 2002-07-02 ソニー株式会社 Junction type field effect transistor and manufacturing method thereof
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5926414A (en) * 1997-04-04 1999-07-20 Magnetic Semiconductors High-efficiency miniature magnetic integrated circuit structures
JP3646508B2 (en) * 1998-03-18 2005-05-11 株式会社日立製作所 Tunnel magnetoresistive element, magnetic sensor and magnetic head using the same
US6051441A (en) * 1998-05-12 2000-04-18 Plumeria Investments, Inc. High-efficiency miniature magnetic integrated circuit structures
US6140139A (en) * 1998-12-22 2000-10-31 Pageant Technologies, Inc. Hall effect ferromagnetic random access memory device and its method of manufacture
US6229729B1 (en) * 1999-03-04 2001-05-08 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
US6266267B1 (en) * 1999-03-04 2001-07-24 Pageant Technologies, Inc. Single conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6288929B1 (en) * 1999-03-04 2001-09-11 Pageant Technologies, Inc. Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
US6330183B1 (en) * 1999-03-04 2001-12-11 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6317354B1 (en) * 1999-03-04 2001-11-13 Pageant Technologies, Inc. Non-volatile random access ferromagnetic memory with single collector sensor
WO2001067459A1 (en) * 2000-03-09 2001-09-13 Lienau Richard M Method and apparatus for reading data from a ferromagnetic memory cell
US6538921B2 (en) * 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
US6404671B1 (en) * 2001-08-21 2002-06-11 International Business Machines Corporation Data-dependent field compensation for writing magnetic random access memories
JP2003173700A (en) * 2001-12-03 2003-06-20 Mitsubishi Electric Corp Semiconductor memory
US7020008B2 (en) * 2001-12-26 2006-03-28 Renesas Technology Corp. Thin film magnetic memory device writing data with bidirectional current
JP4208507B2 (en) * 2002-02-04 2009-01-14 株式会社ルネサステクノロジ Thin film magnetic memory device
JP4212325B2 (en) * 2002-09-30 2009-01-21 株式会社ルネサステクノロジ Nonvolatile storage device

Also Published As

Publication number Publication date
WO2001097227A1 (en) 2001-12-20
US7187579B2 (en) 2007-03-06
US20070103970A1 (en) 2007-05-10
US7023727B2 (en) 2006-04-04
US7257021B2 (en) 2007-08-14
US20040264243A1 (en) 2004-12-30
US20060164879A1 (en) 2006-07-27

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