ES2085571T3 - Neutralizador de haz de iones y un sistema de implantacion de iones que lo utiliza. - Google Patents
Neutralizador de haz de iones y un sistema de implantacion de iones que lo utiliza.Info
- Publication number
- ES2085571T3 ES2085571T3 ES92306491T ES92306491T ES2085571T3 ES 2085571 T3 ES2085571 T3 ES 2085571T3 ES 92306491 T ES92306491 T ES 92306491T ES 92306491 T ES92306491 T ES 92306491T ES 2085571 T3 ES2085571 T3 ES 2085571T3
- Authority
- ES
- Spain
- Prior art keywords
- ion beam
- ion
- electron
- neutralizer
- beam neutralizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002513 implantation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
- H01J2237/0045—Neutralising arrangements of objects being observed or treated using secondary electrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
UNA IMPLANTACION DE IONES QUE CARACTERIZA UN NEUTRALIZADOR DE HAZ MEJORADO. UNA FUENTE CILINDRICA DE ELECTRONES RODEA EL HAZ DE IONES EN UNA UBICACION JUSTO ANTES DE QUE EL HAZ DE IONES ENTRE EN UNA CAMARA DE IMPLANTACION. LAS CAVIDADES SEPARADAS DE FORMA REGULAR EN LA FUENTE DE ELECTRONES CONTIENEN FILAMENTOS DE ALAMBRE QUE SE ENERGIZAN PARA QUE EMITAN ELECTRONES. LOS ELECTRONES SE ACELERAN A TRAVES DE LA ZONA DEL HAZ DE IONES Y HACEN IMPACTO EN UNA PARED ORIENTADA HACIA EL INTERIOR DEL SOPORTE CILINDRICO DE ELECTRONES. ESTO PROVOCA EMISIONES DE ELECTRONES DE BAJA ENERGIA QUE NEUTRALIZAN EL HAZ DE IONES. EL RENDIMIENTO DEL NEUTRALIZADOR DEL HAZ SE INCREMENTA INYECTANDO UN GAS IONIZABLE EN LA ZONA SITUADA ENTRE LA SUPERFICIE EMISORA DE ELECTRONES Y EL HAZ DE IONES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/732,778 US5164599A (en) | 1991-07-19 | 1991-07-19 | Ion beam neutralization means generating diffuse secondary emission electron shower |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2085571T3 true ES2085571T3 (es) | 1996-06-01 |
Family
ID=24944919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92306491T Expired - Lifetime ES2085571T3 (es) | 1991-07-19 | 1992-07-15 | Neutralizador de haz de iones y un sistema de implantacion de iones que lo utiliza. |
Country Status (9)
Country | Link |
---|---|
US (1) | US5164599A (es) |
EP (1) | EP0523983B1 (es) |
JP (1) | JPH05211055A (es) |
KR (1) | KR0152449B1 (es) |
CA (1) | CA2072848A1 (es) |
DE (1) | DE69209391T2 (es) |
ES (1) | ES2085571T3 (es) |
TW (1) | TW205605B (es) |
ZA (1) | ZA925282B (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5378899A (en) * | 1993-10-07 | 1995-01-03 | Kimber; Eugene L. | Ion implantation target charge control system |
US5531420A (en) | 1994-07-01 | 1996-07-02 | Eaton Corporation | Ion beam electron neutralizer |
US5633506A (en) * | 1995-07-17 | 1997-05-27 | Eaton Corporation | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
US5554854A (en) * | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
US5554857A (en) * | 1995-10-19 | 1996-09-10 | Eaton Corporation | Method and apparatus for ion beam formation in an ion implanter |
US5691537A (en) * | 1996-01-22 | 1997-11-25 | Chen; John | Method and apparatus for ion beam transport |
US5661308A (en) * | 1996-05-30 | 1997-08-26 | Eaton Corporation | Method and apparatus for ion formation in an ion implanter |
US5703375A (en) * | 1996-08-02 | 1997-12-30 | Eaton Corporation | Method and apparatus for ion beam neutralization |
US5814819A (en) * | 1997-07-11 | 1998-09-29 | Eaton Corporation | System and method for neutralizing an ion beam using water vapor |
US5909031A (en) * | 1997-09-08 | 1999-06-01 | Eaton Corporation | Ion implanter electron shower having enhanced secondary electron emission |
US5856674A (en) * | 1997-09-16 | 1999-01-05 | Eaton Corporation | Filament for ion implanter plasma shower |
US6271529B1 (en) | 1997-12-01 | 2001-08-07 | Ebara Corporation | Ion implantation with charge neutralization |
US5959305A (en) * | 1998-06-19 | 1999-09-28 | Eaton Corporation | Method and apparatus for monitoring charge neutralization operation |
US6164146A (en) * | 1999-08-09 | 2000-12-26 | Samco International, Inc. | Test device for ozone-ultraviolet cleaning-stripping equipment |
US6555835B1 (en) | 1999-08-09 | 2003-04-29 | Samco International, Inc. | Ultraviolet-ozone oxidation system and method |
WO2003012160A1 (fr) * | 2001-07-31 | 2003-02-13 | Asahi Optronics, Ltd. | Systeme de galvanoplastie haute frequence par depot par evaporation sous vide |
DE10254416A1 (de) | 2002-11-21 | 2004-06-09 | Infineon Technologies Ag | Vorrichtung zum Erzeugen von Sekundärelektronen, insbesondere Sekundärelektrode und Beschleunigungselektrode |
US7038223B2 (en) * | 2004-04-05 | 2006-05-02 | Burle Technologies, Inc. | Controlled charge neutralization of ion-implanted articles |
KR100836765B1 (ko) * | 2007-01-08 | 2008-06-10 | 삼성전자주식회사 | 이온빔을 사용하는 반도체 장비 |
CN105206492A (zh) * | 2014-06-18 | 2015-12-30 | 上海华力微电子有限公司 | 一种改善带状离子束均匀性的装置 |
CN108242379A (zh) * | 2016-12-26 | 2018-07-03 | 无锡中微掩模电子有限公司 | 一种环形电子枪 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4361762A (en) * | 1980-07-30 | 1982-11-30 | Rca Corporation | Apparatus and method for neutralizing the beam in an ion implanter |
US4463255A (en) * | 1980-09-24 | 1984-07-31 | Varian Associates, Inc. | Apparatus for enhanced neutralization of positively charged ion beam |
US4786814A (en) * | 1983-09-16 | 1988-11-22 | General Electric Company | Method of reducing electrostatic charge on ion-implanted devices |
JPS62103951A (ja) * | 1985-10-29 | 1987-05-14 | Toshiba Corp | イオン注入装置 |
US4886971A (en) * | 1987-03-13 | 1989-12-12 | Mitsubishi Denki Kabushiki Kaisha | Ion beam irradiating apparatus including ion neutralizer |
US4825087A (en) * | 1987-05-13 | 1989-04-25 | Applied Materials, Inc. | System and methods for wafer charge reduction for ion implantation |
JPS6410563A (en) * | 1987-07-02 | 1989-01-13 | Sumitomo Eaton Nova | Electric charging suppressor of ion implanter |
US4804837A (en) * | 1988-01-11 | 1989-02-14 | Eaton Corporation | Ion implantation surface charge control method and apparatus |
EP0397120B1 (en) * | 1989-05-09 | 1994-09-14 | Sumitomo Eaton Nova Corporation | Ion implantation apparatus capable of avoiding electrification of a substrate |
-
1991
- 1991-07-19 US US07/732,778 patent/US5164599A/en not_active Expired - Lifetime
-
1992
- 1992-06-30 CA CA002072848A patent/CA2072848A1/en not_active Abandoned
- 1992-07-14 JP JP4209590A patent/JPH05211055A/ja active Pending
- 1992-07-15 EP EP92306491A patent/EP0523983B1/en not_active Expired - Lifetime
- 1992-07-15 ES ES92306491T patent/ES2085571T3/es not_active Expired - Lifetime
- 1992-07-15 DE DE69209391T patent/DE69209391T2/de not_active Expired - Fee Related
- 1992-07-15 ZA ZA925282A patent/ZA925282B/xx unknown
- 1992-07-16 KR KR1019920012684A patent/KR0152449B1/ko not_active IP Right Cessation
- 1992-11-03 TW TW081108741A patent/TW205605B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPH05211055A (ja) | 1993-08-20 |
KR930003248A (ko) | 1993-02-24 |
CA2072848A1 (en) | 1993-01-20 |
EP0523983B1 (en) | 1996-03-27 |
DE69209391T2 (de) | 1996-10-31 |
ZA925282B (en) | 1993-04-28 |
KR0152449B1 (ko) | 1998-12-01 |
US5164599A (en) | 1992-11-17 |
EP0523983A1 (en) | 1993-01-20 |
DE69209391D1 (de) | 1996-05-02 |
TW205605B (es) | 1993-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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