ES2071443T3 - Procedimiento de realizacion de un laser semiconductor plano de cinta enterrada. - Google Patents
Procedimiento de realizacion de un laser semiconductor plano de cinta enterrada.Info
- Publication number
- ES2071443T3 ES2071443T3 ES92400227T ES92400227T ES2071443T3 ES 2071443 T3 ES2071443 T3 ES 2071443T3 ES 92400227 T ES92400227 T ES 92400227T ES 92400227 T ES92400227 T ES 92400227T ES 2071443 T3 ES2071443 T3 ES 2071443T3
- Authority
- ES
- Spain
- Prior art keywords
- tape
- realization
- procedure
- flat semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/10—Lift-off masking
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
TRAS UN GRABADO QUE DELIMITA UNA CINTA DE LASER (2A) EN RELIEVE SOBRE UN SUSTRATO (1), CAPAS LATERALES (6, 7) QUE DEBEN RODEAR ESTA CINTA ESTAN FORMADAS POR UN METODO DE CRECIMIENTO NO SELECTIVO QUE REALIZA UNA DEPOSICION NO SOLO AL LADO DE ESTA CINTA, SINO TAMBIEN POR ENCIMA DE ESTE CREANDO UN SALIENTE PARASITO (6A, 7A). ESTE SALIENTE SE RETIRA A CONTINUACION TRAS HABER SIDO SEPARADO DE ESTE SUSTRATO POR UN ATAQUE QUIMICO SELECTIVO DE UNA TIRA DE AYUDA AL RELEJE (4A) QUE HABIA SIDO DEPOSITADA PARA ESTE PROPOSITO POR ENCIMA DE ESTA CINTA ANTES DE ESTE GRABADO. SE HAN REALIZADO PASOS (28) PARA EL MEDIO DE ATAQUE UTILIZADO PARA ESTO. LA INVENCION SE APLICA EN PARTICULAR A LA REALIZACION DE SISTEMAS DE TRANSMISION DE FIBRAS OPTICAS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9101470A FR2672740B1 (fr) | 1991-02-08 | 1991-02-08 | Procede de realisation d'un laser semiconducteur planaire a ruban enterre. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2071443T3 true ES2071443T3 (es) | 1995-06-16 |
Family
ID=9409518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92400227T Expired - Lifetime ES2071443T3 (es) | 1991-02-08 | 1992-01-29 | Procedimiento de realizacion de un laser semiconductor plano de cinta enterrada. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5215939A (es) |
EP (1) | EP0498695B1 (es) |
JP (1) | JP3067052B2 (es) |
DE (1) | DE69201891T2 (es) |
ES (1) | ES2071443T3 (es) |
FR (1) | FR2672740B1 (es) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7877014B2 (en) * | 2001-07-05 | 2011-01-25 | Enablence Technologies Inc. | Method and system for providing a return path for signals generated by legacy video service terminals in an optical network |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766994B2 (ja) * | 1985-02-19 | 1995-07-19 | シャープ株式会社 | 半導体レーザ素子 |
JPH0710019B2 (ja) * | 1987-01-17 | 1995-02-01 | 日本電信電話株式会社 | 埋込み構造半導体レ−ザの製造方法 |
JPH0279486A (ja) * | 1988-09-14 | 1990-03-20 | Sharp Corp | 半導体レーザ素子 |
JPH0281441A (ja) * | 1988-09-17 | 1990-03-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
KR900013612A (ko) * | 1989-02-17 | 1990-09-05 | 프레데릭 얀 스미트 | 두 물체의 연결 방법 및 장치 |
US5084409A (en) * | 1990-06-26 | 1992-01-28 | Texas Instruments Incorporated | Method for patterned heteroepitaxial growth |
JPH06200857A (ja) * | 1993-01-08 | 1994-07-19 | Fuji Heavy Ind Ltd | 高圧噴射式エンジンの燃料圧力制御方法 |
-
1991
- 1991-02-08 FR FR9101470A patent/FR2672740B1/fr not_active Expired - Lifetime
-
1992
- 1992-01-29 EP EP92400227A patent/EP0498695B1/fr not_active Expired - Lifetime
- 1992-01-29 DE DE69201891T patent/DE69201891T2/de not_active Expired - Fee Related
- 1992-01-29 ES ES92400227T patent/ES2071443T3/es not_active Expired - Lifetime
- 1992-02-06 US US07/832,024 patent/US5215939A/en not_active Expired - Fee Related
- 1992-02-07 JP JP4022873A patent/JP3067052B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0498695B1 (fr) | 1995-04-05 |
DE69201891D1 (de) | 1995-05-11 |
EP0498695A1 (fr) | 1992-08-12 |
FR2672740B1 (fr) | 1995-03-31 |
DE69201891T2 (de) | 1995-09-07 |
JP3067052B2 (ja) | 2000-07-17 |
FR2672740A1 (fr) | 1992-08-14 |
JPH04336485A (ja) | 1992-11-24 |
US5215939A (en) | 1993-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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