ES2066270T3 - Procedimiento y dispositivo para el recubrimiento de sustratos mediante un catodo de magnetron. - Google Patents

Procedimiento y dispositivo para el recubrimiento de sustratos mediante un catodo de magnetron.

Info

Publication number
ES2066270T3
ES2066270T3 ES91109121T ES91109121T ES2066270T3 ES 2066270 T3 ES2066270 T3 ES 2066270T3 ES 91109121 T ES91109121 T ES 91109121T ES 91109121 T ES91109121 T ES 91109121T ES 2066270 T3 ES2066270 T3 ES 2066270T3
Authority
ES
Spain
Prior art keywords
roller
pole
substrates
flange
external flange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91109121T
Other languages
English (en)
Spanish (es)
Inventor
Siegfried Dr Beisswenger
Reiner Dipl-Phys Kukla
Wolf-Eckart Dipl-Ing Fritsche
Michael Dr-Phys Lubbehusen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Application granted granted Critical
Publication of ES2066270T3 publication Critical patent/ES2066270T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
ES91109121T 1990-06-13 1991-06-04 Procedimiento y dispositivo para el recubrimiento de sustratos mediante un catodo de magnetron. Expired - Lifetime ES2066270T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4018914A DE4018914C1 (enExample) 1990-06-13 1990-06-13

Publications (1)

Publication Number Publication Date
ES2066270T3 true ES2066270T3 (es) 1995-03-01

Family

ID=6408334

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91109121T Expired - Lifetime ES2066270T3 (es) 1990-06-13 1991-06-04 Procedimiento y dispositivo para el recubrimiento de sustratos mediante un catodo de magnetron.

Country Status (6)

Country Link
US (1) US5069772A (enExample)
EP (1) EP0461525B1 (enExample)
JP (1) JP3370099B2 (enExample)
KR (1) KR100224507B1 (enExample)
DE (2) DE4018914C1 (enExample)
ES (1) ES2066270T3 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182001A (en) * 1990-06-13 1993-01-26 Leybold Aktiengesellschaft Process for coating substrates by means of a magnetron cathode
US5490914A (en) * 1995-02-14 1996-02-13 Sony Corporation High utilization sputtering target for cathode assembly
US5364518A (en) * 1991-05-28 1994-11-15 Leybold Aktiengesellschaft Magnetron cathode for a rotating target
DE4123274C2 (de) * 1991-07-13 1996-12-19 Leybold Ag Vorrichtung zum Beschichten von Bauteilen bzw. Formteilen durch Kathodenzerstäubung
US5174880A (en) * 1991-08-05 1992-12-29 Hmt Technology Corporation Magnetron sputter gun target assembly with distributed magnetic field
DE9217937U1 (de) * 1992-01-29 1993-04-01 Leybold AG, 6450 Hanau Vorrichtung zur Kathodenzerstäubung
JP2970317B2 (ja) * 1993-06-24 1999-11-02 松下電器産業株式会社 スパッタリング装置及びスパッタリング方法
US5496455A (en) * 1993-09-16 1996-03-05 Applied Material Sputtering using a plasma-shaping magnet ring
DE59400046D1 (de) * 1994-04-07 1995-12-21 Balzers Hochvakuum Magnetronzerstäubungsquelle und deren Verwendung.
CN1067118C (zh) * 1994-07-08 2001-06-13 松下电器产业株式会社 磁控管溅射装置
US5597459A (en) * 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
US5512150A (en) * 1995-03-09 1996-04-30 Hmt Technology Corporation Target assembly having inner and outer targets
CH691643A5 (de) * 1995-10-06 2001-08-31 Unaxis Balzers Ag Magnetronzerstäubungsquelle und deren Verwendung.
DE19614599A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
US5863399A (en) * 1996-04-13 1999-01-26 Singulus Technologies Gmbh Device for cathode sputtering
DE19614595A1 (de) * 1996-04-13 1997-10-16 Singulus Technologies Gmbh Vorrichtung zur Kathodenzerstäubung
WO2002011176A1 (en) * 2000-07-27 2002-02-07 Trikon Holdings Limited Magnetron sputtering
DE10138165A1 (de) * 2001-08-03 2003-02-27 Singulus Technologies Ag Magnetron-Zerstäubungsanlage mit einer Vorrichtung zum Verhindern einer Rückbeschichtung des Zerstäubungstargets
DE10234861A1 (de) * 2002-07-31 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Einrichtung zur wechselweisen Abscheidung zweier Materialien durch Kathoden-Zerstäubung
US7718042B2 (en) * 2004-03-12 2010-05-18 Oc Oerlikon Balzers Ag Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source
PL1609880T3 (pl) * 2004-06-22 2008-10-31 Applied Mat Gmbh & Co Kg Katoda do rozpylania jonowego do procesów nakładania powłok
US20070012557A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc Low voltage sputtering for large area substrates
EP1873809A1 (en) 2006-06-26 2008-01-02 M2 Engineering AB (publ) Sputtering device
US20090314631A1 (en) * 2008-06-18 2009-12-24 Angstrom Sciences, Inc. Magnetron With Electromagnets And Permanent Magnets
US9388490B2 (en) 2009-10-26 2016-07-12 General Plasma, Inc. Rotary magnetron magnet bar and apparatus containing the same for high target utilization
KR102309220B1 (ko) * 2020-11-16 2021-10-07 (주)비엠티 무진동 브레이커

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
NL7607473A (nl) * 1976-07-07 1978-01-10 Philips Nv Verstuifinrichting en werkwijze voor het ver- stuiven met een dergelijke inrichting.
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
US4444635A (en) * 1981-07-22 1984-04-24 Hitachi, Ltd. Film forming method
DE3411536A1 (de) * 1983-07-06 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Magnetronkatode fuer katodenzerstaeubungsanlagen
US4515675A (en) * 1983-07-06 1985-05-07 Leybold-Heraeus Gmbh Magnetron cathode for cathodic evaportion apparatus
DE3480245D1 (en) * 1983-12-05 1989-11-23 Leybold Ag Magnetron-cathodes for the sputtering of ferromagnetic targets
JPS60152671A (ja) * 1984-01-20 1985-08-10 Anelva Corp スパツタリング電極
DE3624150C2 (de) * 1986-07-17 1994-02-24 Leybold Ag Zerstäubungskatode nach dem Magnetronprinzip
DE3727901A1 (de) * 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip

Also Published As

Publication number Publication date
KR920001602A (ko) 1992-01-30
KR100224507B1 (ko) 1999-10-15
DE59104022D1 (de) 1995-02-09
EP0461525B1 (de) 1994-12-28
JP3370099B2 (ja) 2003-01-27
US5069772A (en) 1991-12-03
EP0461525A1 (de) 1991-12-18
JPH04254580A (ja) 1992-09-09
DE4018914C1 (enExample) 1991-06-06

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