ES2034202T3 - Un proceso para la formacion de diamante sintetico. - Google Patents

Un proceso para la formacion de diamante sintetico.

Info

Publication number
ES2034202T3
ES2034202T3 ES198888302856T ES88302856T ES2034202T3 ES 2034202 T3 ES2034202 T3 ES 2034202T3 ES 198888302856 T ES198888302856 T ES 198888302856T ES 88302856 T ES88302856 T ES 88302856T ES 2034202 T3 ES2034202 T3 ES 2034202T3
Authority
ES
Spain
Prior art keywords
formation
synthetic diamond
vapor deposition
diamond
diamantine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198888302856T
Other languages
English (en)
Inventor
John Michael Pinneo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Crystallume
Original Assignee
Crystallume
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystallume filed Critical Crystallume
Application granted granted Critical
Publication of ES2034202T3 publication Critical patent/ES2034202T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/44—Fluidisation grids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

SE OFRECE UN CRECIMIENTOPARA FORMAR DIAMANTES SINTETICOS POR DEPOSICION DE VAPOR DE UNA FUENTE DE GAS DE CARBONO, EN PRESENCIA DE HIDROGENO ATOMICO, SOBRE UN SUSTRATO CONTENIDO EN UN LECHO FLUIDIZADO. EL DIAMANTE PUEDE RECUBRIRSE POR DEPOSICION DE VAPOR DE UN MATERIAL NO DIAMANTINO.
ES198888302856T 1987-03-30 1988-03-30 Un proceso para la formacion de diamante sintetico. Expired - Lifetime ES2034202T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3241587A 1987-03-30 1987-03-30
US07/171,720 US5015528A (en) 1987-03-30 1988-03-22 Fluidized bed diamond particle growth

Publications (1)

Publication Number Publication Date
ES2034202T3 true ES2034202T3 (es) 1993-04-01

Family

ID=26708400

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198888302856T Expired - Lifetime ES2034202T3 (es) 1987-03-30 1988-03-30 Un proceso para la formacion de diamante sintetico.

Country Status (6)

Country Link
US (1) US5015528A (es)
EP (1) EP0286310B1 (es)
JP (1) JPS6414196A (es)
DE (1) DE3873133T2 (es)
ES (1) ES2034202T3 (es)
GR (1) GR3006079T3 (es)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270114A (en) * 1987-03-30 1993-12-14 Crystallume High thermal conductivity diamond/non-diamond composite materials
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
US5284709A (en) * 1987-03-30 1994-02-08 Crystallume Diamond materials with enhanced heat conductivity
US5273825A (en) * 1987-03-30 1993-12-28 Crystallume Article comprising regions of high thermal conductivity diamond on substrates
US5413772A (en) * 1987-03-30 1995-05-09 Crystallume Diamond film and solid particle composite structure and methods for fabricating same
JP2702979B2 (ja) * 1988-09-01 1998-01-26 昭和電工株式会社 複合ダイヤモンド粒の製造方法
JP2639505B2 (ja) * 1988-10-20 1997-08-13 住友電気工業株式会社 粒状ダイヤモンドの合成方法
JP2751314B2 (ja) * 1989-02-15 1998-05-18 富士通株式会社 ダイヤモンド被膜の形成方法
JPH02293395A (ja) * 1989-05-01 1990-12-04 Sumitomo Electric Ind Ltd 粒状ダイヤモンドの合成方法及び装置
US5397558A (en) * 1991-03-26 1995-03-14 Semiconductor Energy Laboratory Co., Ltd. Method of forming diamond or diamond containing carbon film
EP0515999B1 (en) * 1991-05-22 1997-07-30 PLATA Ltd. Co. A containerless processing method for materials under a state of compensated-gravitation and an apparatus therefor
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
US5783335A (en) * 1992-04-07 1998-07-21 The Regents Of The University Of California, Office Of Technology Transfer Fluidized bed deposition of diamond
WO1993022482A1 (en) * 1992-05-04 1993-11-11 Case Western Reserve University Growth of diamond crystals
DE4233085C2 (de) 1992-10-01 1996-10-10 Fraunhofer Ges Forschung Verfahren zur Herstellung heteroepitaktischer Diamantschichten
US5639551A (en) * 1993-02-10 1997-06-17 California Institute Of Technology Low pressure growth of cubic boron nitride films
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
WO1997005757A1 (en) * 1995-07-31 1997-02-13 Crystalline Materials Corporation Diamond electronic packages featuring bonded metal
US5882786A (en) * 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
EP1321545A1 (en) * 2001-12-20 2003-06-25 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Method for producing particles with diamond structure
DE102004034667A1 (de) * 2004-07-18 2006-02-09 Heraeus Quarzglas Gmbh & Co. Kg Synthetische Diamantpartikel und Verfahren zur Herstellung von synthetischen Diamantpartikeln
US7122837B2 (en) 2005-01-11 2006-10-17 Apollo Diamond, Inc Structures formed in diamond
US7547358B1 (en) 2008-03-03 2009-06-16 Shapiro Zalman M System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism
CN104760955B (zh) * 2009-04-28 2017-03-08 储晞 生产大颗粒金刚石的方法和设备
US10105669B2 (en) 2012-08-29 2018-10-23 Hemlock Semiconductor Operations Llc Tapered fluidized bed reactor and process for its use
CN105986247B (zh) * 2015-02-11 2019-06-07 宁波晨鑫维克工业科技有限公司 一种金刚石表面镀膜的流化床装置和方法以及使用该方法制备的产品
US10847364B2 (en) 2018-05-10 2020-11-24 Kabushiki Kaisha Toshiba Laminated body and semiconductor device
FR3113675B1 (fr) * 2020-09-01 2022-09-09 Safran Ceram Procédé de revêtement de fibres en lit fluidisé
JP2023091834A (ja) * 2021-12-21 2023-07-03 国立研究開発法人物質・材料研究機構 ダイヤモンド粒子、および、その製造方法
CN115141497B (zh) * 2022-09-01 2022-12-13 宜兴市国强炉业有限公司 一种用于循环流化床锅炉的高导热耐磨材料及其制备方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB665472A (en) * 1948-02-05 1952-01-23 Standard Oil Dev Co Improvements in or relating to the contacting of gases with finely divided solids
NL114085C (es) * 1955-08-29
US2947609A (en) * 1958-01-06 1960-08-02 Gen Electric Diamond synthesis
US2947611A (en) * 1958-01-06 1960-08-02 Gen Electric Diamond synthesis
US2947610A (en) * 1958-01-06 1960-08-02 Gen Electric Method of making diamonds
US2941248A (en) * 1958-01-06 1960-06-21 Gen Electric High temperature high pressure apparatus
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3175885A (en) * 1960-07-01 1965-03-30 North American Aviation Inc Method for artificial synthesis of diamonds
US3142539A (en) * 1960-07-01 1964-07-28 North American Aviation Inc Method for artificial synthesis of diamonds
US3264098A (en) * 1963-08-19 1966-08-02 Westinghouse Electric Corp Fluidized bed process for the production of molybdenum
US3371996A (en) * 1964-01-20 1968-03-05 Henry J. Hibshman Diamond growth process
US3520667A (en) * 1967-08-15 1970-07-14 Carborundum Co Silicon carbide coated diamond abrasive grains
US3630679A (en) * 1968-06-26 1971-12-28 Univ Case Western Reserve Diamond growth process
US3607061A (en) * 1968-06-26 1971-09-21 Univ Case Western Reserve Manufacture of synthetic diamonds
US3630678A (en) * 1968-06-26 1971-12-28 Univ Case Western Reserve Diamond growth process
JPS4810368B1 (es) * 1968-11-19 1973-04-03
US3661526A (en) * 1969-06-24 1972-05-09 Univ Case Western Reserve Process for the catalytic growth of metastable crystals from the vapor phase
US3705937A (en) * 1970-05-01 1972-12-12 Boris Eduardovich Dzevitsky Producing diamonds synthetically
US3714334A (en) * 1971-05-03 1973-01-30 Diamond Squared Ind Inc Process for epitaxial growth of diamonds
US4104441A (en) * 1975-07-29 1978-08-01 Institut Sverkhtverdykh Materialov Ssr Polycrystalline diamond member and method of preparing same
US4008685A (en) * 1976-04-20 1977-02-22 Westinghouse Electric Corporation Electrostatic fluidized bed build control
US4228142A (en) * 1979-08-31 1980-10-14 Holcombe Cressie E Jun Process for producing diamond-like carbon
US4352787A (en) * 1979-11-08 1982-10-05 Tdc-Technology Development Corp. Ultra-hard particles of carbon produced by reacting metal carbide with non-metal halide in hot melt system
DD147625A1 (de) * 1979-12-11 1981-04-15 Erich Wolf Verfahren zur reaktion pulverfoermiger mit gasfoermigen stoffen
US4606738A (en) * 1981-04-01 1986-08-19 General Electric Company Randomly-oriented polycrystalline silicon carbide coatings for abrasive grains
JPS58135117A (ja) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater ダイヤモンドの製造法
JPS60231498A (ja) * 1984-05-01 1985-11-18 Hitachi Ltd ダイヤモンド低圧合成法
US4859493A (en) * 1987-03-31 1989-08-22 Lemelson Jerome H Methods of forming synthetic diamond coatings on particles using microwaves
JPH066769B2 (ja) * 1987-07-10 1994-01-26 工業技術院長 ダイヤモンド焼結体及びその製造法
JPH01151097A (ja) * 1987-12-08 1989-06-13 Nec Corp サンプルホールド回路

Also Published As

Publication number Publication date
DE3873133D1 (de) 1992-09-03
JPS6414196A (en) 1989-01-18
EP0286310A1 (en) 1988-10-12
US5015528A (en) 1991-05-14
GR3006079T3 (es) 1993-06-21
EP0286310B1 (en) 1992-07-29
DE3873133T2 (de) 1992-12-03

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