EP4619353A1 - Verfahren zum strukturieren von glaselementen durch ätzen mit hohen ätzraten - Google Patents
Verfahren zum strukturieren von glaselementen durch ätzen mit hohen ätzratenInfo
- Publication number
- EP4619353A1 EP4619353A1 EP23801420.3A EP23801420A EP4619353A1 EP 4619353 A1 EP4619353 A1 EP 4619353A1 EP 23801420 A EP23801420 A EP 23801420A EP 4619353 A1 EP4619353 A1 EP 4619353A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- etching
- glass element
- glass
- temperature
- molarity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
Definitions
- the invention relates to a method for structuring glass elements.
- the invention relates to a method for structuring glass elements using wet-chemical etching processes.
- Structuring methods are known from the state of the art in which, for example, filament-shaped damage is introduced into a glass element by the action of laser radiation and these are then subjected to a wet-chemical etching process.
- the etching process can be carried out using HF or by the action of a basic etching medium.
- alkali metal hydroxide solutions are generally used as the etching medium.
- Etching the glass corresponds to the release of individual glass components, in particular metal ions, from the glass network.
- the negatively charged hydroxide ions from the basic etching medium attack the Si-O-Si bonds of the glass network.
- the etching rate or the speed at which the glass dissolves depends on various factors.
- the glass composition of the glass influences the etching rate of the structuring process.
- the number of bridging oxygens on a silicon atom influences its electrophilicity and thus the “reactivity” of this atom.
- the additional network formers and converters present in the glass form degradation products when the glass dissolves, which influence the etching process.
- the degradation product Sodium silicate or the silicate anion accelerates the etching process.
- the etching rate can also be influenced by external process parameters such as the pH value of the etching medium, the base used and the etching temperature.
- the concentration of the etching medium and the etching temperature are usually kept constant during the etching process.
- the etching rate during the etching process only changes due to the change in the relative amount of dissolved glass in the etching medium. This increases with each etching step, as the dissolved glass can no longer be "filtered out” of the etching solution.
- the influence of the dissolved degradation products of the glass is negligible, so that the etching rate can be regarded as largely constant.
- the etching solution penetrates structures with diameters of just a few hundred nanometers and then etches them away. Due to the small volume of these filaments, a relatively large amount of glass is dissolved locally in the filaments in this process in a small amount of etching solution. Accordingly, the relative amount of glass dissolved increases and the etching rate decreases.
- the height difference between the edge areas of the filament and more distant surface areas do not exceed certain limit values.
- the etching rate can be strongly influenced by the process temperature. For example, an increase in the etching temperature by 10 K roughly doubles the etching rate. Since the duration of the structuring process is inversely proportional to the etching rate, high process temperatures are advantageous from an economic point of view, as they can reduce the process times. In structuring processes in which the height deviations in the edge areas of the filaments must not exceed a certain value, the increase in the etching temperature is limited by the fact that there is a strong connection between the extent of the height difference and the etching temperature. With a given specification for the height difference, there are limits to more economical structuring at higher temperatures.
- a further object of the invention is to provide an etching method with optimized process parameters.
- One aspect of the invention relates to a method for structuring glass elements by etching, in which a glass element (1) is provided with at least one Glass element (1) is provided with a filament-shaped damage (5), and wherein the glass element (1) with the filament-shaped damage (5) is exposed to a basic etching medium (14).
- the basic etching medium is suitable for removing glass from the glass element by etching and is preferably a solution of an alkali hydroxide.
- the solution contains water or is an aqueous solution.
- the etching medium comprises an aqueous KOH solution.
- the etching expands the filament-shaped damage in the glass element, creating an opening in the glass element.
- the process can also be used to combine several filaments to form an opening. In this process, channels are initially formed by etching the filament-shaped damage. These are further expanded by the etching process, so that adjacent channels merge.
- the molarity of the etching medium or the concentration of base in the etching medium and the etching temperature are determined by etching at least one test glass element with filamentary damage as a reference point in at least one previous etching process and determining an edge height change at the opening created by the filamentary damage during etching.
- the edge height change represents the amount of increased or reduced glass thickness at the edge of the opening created by the etching process.
- at least one of the parameters etching temperature and molarity of the etching medium is increased so that the removal rate of the glass or the etching rate increases without the predetermined value of the edge height change being exceeded.
- the etching of the glass element is now carried out with the values of the etching temperature and molarity or concentration of the etching solution determined in this way.
- the temperature at which the etching process is carried out is selected so that it is as high as possible, but without exceeding the predetermined value for the maximum edge height change.
- Tmax The temperature at which the maximum permissible edge height change is not exceeded is called Tmax and can be calculated as follows:
- EA denotes the activation energy of the etching reaction
- R the universal gas constant
- C the molarity or concentration of the etching medium
- K re f the predetermined value of the edge height change
- Ko the value of the edge height change at a very low etching rate.
- the activation energy EA is a material parameter that cannot be influenced by the etching process.
- the proportionality constant A takes into account the influence of the hydroxide concentration on the reaction rate of the etching process. An increase in the hydroxide concentration above a certain limit leads to a reduction in the speed of the etching process.
- Both parameters can be determined for the respective glass by measuring the etching rate at different temperatures, whereby the parameters A and EA result from the straight line equation of the fitted lines.
- the variables a, b, gfit,i and gfit,2 are fit parameters which describe the etching rate and edge height change for the glass to be processed as a function of the concentration of the etching solution at a temperature Taef, etching rate.
- the fit parameters a, b describe the relationship between edge height change K and etching rate according to the relationship where Re is the etching rate.
- the parameters gfn,i and gfn,2 describe the relationship between the etching rate and temperature and concentration according to the relationship
- the temperature at which maximum etching can be carried out at a given hydroxide concentration C in the etching bath without exceeding the pre-determined maximum value for the edge height change K re f is determined using a reference measurement at an etching temperature of 98°C.
- the fit parameters a, b, gfit,i and gfit,2 described above were determined, so that the following applies to the maximum etching temperature Tmax:
- EA denotes the activation energy of the etching reaction in J/mol and C the concentration of hydroxide ions in the etching medium in mol/1.
- Kref is the predetermined, maximum value of the edge height change, Ko denotes the edge height change at a very low etching rate, both in nm and can be approximately equated to zero.
- R is the universal gas constant in the units J7(mol-K).
- the maximum value of the edge height change, or the predetermined or fixed maximum value of the edge elevation Kref is less than 10 pm, preferably less than 5 pm, preferably less than 2 pm and very particularly preferably less than 1 pm.
- Kref of less than 0.8 pm, less than 0.5 pm or even less than 0.3 pm can also be selected.
- One embodiment provides for etching the glass element at a temperature and a molarity of the etching medium at which the etching rate is at least as high as the etching rate in an etching medium in the form of a KOH lye which has a molarity or Concentration in the range from 0.5 to 5 mol/l and a temperature in the range from at least 85 °C up to the boiling point.
- a KOH lye which has a molarity or Concentration in the range from 0.5 to 5 mol/l and a temperature in the range from at least 85 °C up to the boiling point.
- the etching temperature is thus determined by the boiling temperature of the etching solution used and does not exceed this boiling temperature.
- the glass is preferably etched in an aqueous solution of a lye, in particular an aqueous alkali hydroxide solution.
- an aqueous KOH solution has proven to be particularly advantageous.
- the viscosity of the etching solution increases, which can make the exchange between the etching volume inside the filaments and the etching volume outside the filaments more difficult, particularly when etching very small structures such as laser filaments.
- the high viscosities can have a detrimental effect on the mobility of the released glass components, so that local concentration gradients can form within the filament. According to one embodiment, it is therefore provided to etch the glass element with an etching solution whose concentration is less than 24 mol/l, preferably less than 20 mol/l and particularly preferably less than 18 mol/l.
- the etching medium has a maximum etching rate that depends on the concentration of the etching solution.
- the amount of edge height change decreases significantly with increasing concentration of the etching solution. This effect is particularly pronounced at higher temperatures, where generally larger edge height changes occur.
- the etching rate is initially reduced, but at the same time, the positive influence of the concentration on the edge height change increases the maximum temperature at which the etching process can be carried out at a predetermined maximum value for the edge height change.
- the influence of the increase in temperature on the etching rate is Due to the exponential influence of the temperature, this is greater than the influence of the concentration of the hydroxide ions or the molarity of the etching solution (cf. formula IV).
- increasing the concentration of the etching medium increases its boiling point. This also increases the maximum etching temperature at which the etching reaction can still be carried out in practice.
- One embodiment of the invention therefore provides that the glass element is etched at a molarity of the etching medium that is higher than the molarity at which the maximum etching rate is achieved.
- the molarity of the etching solution used is at least 3 mol/l higher than the molarity of an etching solution at which the maximum etching rate is achieved. It has proven to be particularly advantageous if the etching solution is a KOH solution, in particular an aqueous KOH solution and has a molarity of at least 8 mol/l.
- Fig. 1 shows the schematic representation of the production of filaments
- Fig. 2 shows a schematic representation of the etching process of a glass element
- Fig. 3 shows a schematic representation of an etched glass element with negative
- Fig. 4 shows the relationship between the etching rate and the concentration of the etching solution using various embodiments
- Fig. 5 the relationship between the etching rate and the amount of dissolved glass in the etching solution
- Fig. 7 the relationship between the concentration and the boiling temperature of an aqueous KOH solution
- Fig. 8 the relationship between etching rate and temperature
- Fig. 9 the relationship between etching rate and concentration of the etching solution
- Fig. 10 shows the relationship between temperature, concentration of the etching solution and the etching rate
- Fig. 11 the relationship between edge elevation and etching rate at different concentrations of the etching solution as well as corresponding fitted curves
- Fig. 12 the relationship between edge elevation and concentration of the etching solution at different temperatures as well as corresponding fitted curves
- Fig. 13 the relationship between edge elevation and temperature at different concentrations of the etching solution as well as corresponding fitted curves
- Fig. 14 is a graphical representation of the optimized process range for a process operating with 5M at 98°C and
- Fig. 15 is a graphical representation of the optimized process area for a process with a maximum edge height difference of 1000 pm.
- Fig. 1 schematically shows the introduction of filament-shaped damage 5 into a glass element 1 by laser irradiation.
- a laser 2 is directed onto the surface 10 of the glass element 1.
- the laser beam 4 has a sufficiently high energy density when it hits the glass element 1 to create filament-shaped damage 5 in the glass element 1.
- the diameter of the filament 5 is determined by the diameter of the laser beam 4 hitting the glass element 5.
- the irradiation of the laser beam 4 causes ablation processes that lead to the formation of filament-shaped damage 5.
- the filament 5 can extend over the entire thickness of the glass. By re-aligning the glass element 1 relative to the laser 2, for example, a large number of adjacent filaments 5 can be created.
- FIG. 2 schematically shows the etching process for expanding the filaments into channels 7.
- a glass element 1 or test glass element 9 is placed in a container 15 with an etching solution 14. This involves an expansion of the filaments 5 to form channels 7.
- the channels 7 penetrate both surfaces 10, 11 of the glass element 1, 9.
- the etching rate and thus also the removal of the glass is not the same at all points on the glass element 1, 9.
- the local etching rate can deviate from the etching rate used overall for etching the surfaces 10, 11.
- the edge height change results from the amount of the difference between the thickness d2 of the glass in the edge region 70 and the thickness dl of the glass in an area of the glass element spaced apart from the edge region.
- Fig. 2 shows an edge elevation.
- Fig. 3 shows an embodiment of a glass element 1 in which the edge regions 70 have a smaller thickness d2 than the total thickness dl. The glass element shown in Fig. 3 therefore has an edge reduction in the edge regions 70.
- Fig. 4 shows the relationship between etching rate and concentration of dissolved glass in the etching solution for three different glasses. It is clear that the etching rate depends on the respective glass composition. The concentration of the dissolved glass is plotted logarithmically, and the relative amount of dissolved glass changes only slightly during a structuring process. The etching rate in the etching solution can therefore in principle be regarded as constant.
- Fig. 5 shows the relationship between the etching rate and the amount of glass dissolved at high glass concentrations.
- the etching process is not stopped, but the etching rate drops significantly. Due to the very small volumes of the filaments, comparably high glass concentrations can also form within the filaments in the structuring processes described here. Accordingly, the etching rate in the filaments is lower than in areas of the glass surface that are spaced away from the filaments. During etching, there is always an exchange of etching solution located in the filaments and the solution in the surrounding volume. At the edge region, i.e.
- an area is created in which the two concentrations mix and in which an etching rate therefore prevails that differs from the areas with a greater distance from the structure.
- Fig. 6 shows the relationship between the edge height change and the etching temperature.
- the individual columns correspond to different cross-sectional geometries of the structures 7, which are also shown in Fig. 6.
- the etching process was carried out at both 80°C and 125°C, all other parameters remained unchanged. It is clear from Fig. 6 that the extent of the edge height difference correlates with the temperature. The extent of this correlation is also influenced by the cross-sectional geometry of the structures. For a given geometry and maximum edge height difference, the possibility of increasing the etching rate by increasing the etching temperature is therefore limited.
- Fig. 7 shows the influence of the concentration or molarity of the etching solution on the boiling point of an aqueous KOH solution.
- the boiling point of the etching solution increases with increasing concentration. This can be explained by the effect of boiling point elevation.
- Fig. 8 shows the relationship between etching rate and temperature depending on the concentration of the etching rate using an example glass.
- test glasses of the same glass composition were etched in three different etching solutions at different temperatures and the etching rate was determined via the weight loss of the glass. From Fig. 8 it is clear that increasing the concentration of the etching solution slows down the etching process. This effect is shown in Fig. 8 by the Parallel shift of the three curves is visible. This influence of concentration is taken into account in the Arrhenius equation by the proportionality constant A:
- the parallelism of the lines in Fig. 8 indicates that the variable EA is not influenced by the concentration of the medium.
- the process window with regard to process temperature is shifted significantly upwards via the higher boiling point, thus enabling faster processes.
- Fig. 9 shows the etching rates of the example glass for different concentrations of a KOH etching solution at a constant etching temperature of 98°C. It is clear that the etching rate drops almost linearly with increasing concentration of the etching solution from a concentration limit of approx. 5 mol/l.
- the etching solution therefore preferably has a concentration of at least 6 mol/l, in particular in the range from 6 to 18 mol/l. For concentrations in this range, i.e. from 6 mol/l to approx. 18 mol/l, the relationship between the concentration and the etching rate can be stated as follows:
- Re,98°C has the unit pm/h.
- the numerical values 1.145 pm/h and 0.046 (pm- l)/(h- mol) result from a fit to the curve shown in Fig. 9 and depend on both the specific glass composition and the temperature at which the curve shown in Fig. 9 was determined, i.e. for a temperature TRef, etching rate of 98°C.
- the proportionality constant A can also be determined accordingly:
- This formula describes the etching rate of the example glass for each concentration of the etching solution in the range of 6 to 18 mol/l and each temperature. It should be noted that the fit parameters refer to the temperature at which the etching rates were measured, i.e. 98°C. This is then determined for all further calculations by the corresponding initial measurements.
- the method according to the invention can be used to determine the optimal process parameters with regard to the highest possible etching rate at a given maximum value for the edge height change.
- the relationship between the etching temperature to be set at a given concentration of the etching solution C is:
- Fig. 10 shows the etching temperature and etching rate as a function of the KOH concentration of the etching solution. It can be seen that the maximum etching rate increases significantly at higher concentrations despite the increasing reference temperature. This is due on the one hand to the exponential term in the Arrhenius equation, which has a stronger influence on the etching rate than the linear part as the temperature increases. In addition, the boiling temperature also increases exponentially.
- Fig. 11 shows the dependence of the edge elevation on the etching rate at different concentrations of the etching solution for the example glass.
- Fig. 12 shows the dependence of the edge elevation on the concentration of the etching solution for the example glass, and Fig. 13 shows the dependence of the edge elevation on the etching temperature.
- Figures 11 to 13 show that, surprisingly, the dependence of the edge elevation on the etching rate and the etching temperature is significantly lower for highly concentrated etching solutions than for etching solutions with lower concentrations.
- Figure 12 also shows that, at the same etching temperature, the height of the Kirby decreases significantly with increasing concentration of the etching medium. This effect is more pronounced at higher temperatures, where stronger Kirbys are formed, than at low temperatures.
- concentration of the etching solution By adjusting the concentration of the etching solution, etching can be carried out at higher temperatures and thus at higher etching rates without deteriorating the specifications regarding the edge height change that were achieved with a previously selected set of parameters consisting of the concentration of the etching solution and the etching temperature.
- a maximum edge height difference Kref can be specified or it can be determined from a previously used process with sufficiently good qualities, i.e. with satisfactory edge height differences.
- Fig. 14 shows the determination of the optimal process range for a process in which the example glass was previously etched with a 5 molar etching solution at a temperature of 98°C.
- the optimized process range is shown hatched and lies above the "comparison temperature" curve because the etching rate is higher there than in the current process and the process can therefore be operated more economically.
- the glass element is etched at a temperature and concentration of the etching medium at which the etching rate is at least as high as the etching rate in an etching medium in the form of a KOH lye, which has a concentration in the range of 0.5 to 5 mol/l and a temperature in the range of at least 85 °C up to the boiling point. It is also advantageous if the process area is below the curve "Kref, 5 mol/1, 98°C" because the edge height difference is smaller there than in the current process.
- Fig. 15 shows the determination of the optimal process range for an etching process for which the maximum edge height change of 1000 nm was defined.
- the optimal process range is above the “comparison temperature” curve, because the etching rate is higher there than in the current process and the process can therefore be operated more economically.
- the temperature is limited by the boiling temperature of the etching solution.
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- Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102022130575.9A DE102022130575A1 (de) | 2022-11-18 | 2022-11-18 | Verfahren zum Strukturieren von Glaselementen durch Ätzen mit hohen Ätzraten |
| PCT/EP2023/080790 WO2024104802A1 (de) | 2022-11-18 | 2023-11-06 | Verfahren zum strukturieren von glaselementen durch ätzen mit hohen ätzraten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP4619353A1 true EP4619353A1 (de) | 2025-09-24 |
Family
ID=88697799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP23801420.3A Pending EP4619353A1 (de) | 2022-11-18 | 2023-11-06 | Verfahren zum strukturieren von glaselementen durch ätzen mit hohen ätzraten |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4619353A1 (de) |
| JP (1) | JP2025537849A (de) |
| KR (1) | KR20250100760A (de) |
| CN (1) | CN120379946A (de) |
| DE (1) | DE102022130575A1 (de) |
| WO (1) | WO2024104802A1 (de) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018110211A1 (de) * | 2018-04-27 | 2019-10-31 | Schott Ag | Verfahren zum Erzeugen feiner Strukturen im Volumen eines Substrates aus sprödharten Material |
| WO2020149040A1 (ja) * | 2019-01-17 | 2020-07-23 | 日本板硝子株式会社 | 微細構造付ガラス基板及び微細構造付ガラス基板の製造方法 |
| EP3984970B1 (de) * | 2020-10-14 | 2026-02-25 | Schott Ag | Verfahren zur verarbeitung von glas durch alkalische ätzung |
| EP4011846A1 (de) * | 2020-12-09 | 2022-06-15 | Schott Ag | Verfahren zur strukturierung eines glaselements und damit strukturiertes glaselement |
| DE102020133278A1 (de) * | 2020-12-14 | 2022-06-15 | Schott Ag | Verfahren zur Herstellung strukturierter Glasartikel durch alkalische Ätzung |
| DE102021100181A1 (de) * | 2021-01-08 | 2022-07-14 | Schott Ag | Verfahren zur Verminderung erhabener Strukturen an Glaselementen und verfahrensgemäß hergestelltes Glaselement |
-
2022
- 2022-11-18 DE DE102022130575.9A patent/DE102022130575A1/de active Pending
-
2023
- 2023-11-06 JP JP2025528770A patent/JP2025537849A/ja active Pending
- 2023-11-06 CN CN202380079282.6A patent/CN120379946A/zh active Pending
- 2023-11-06 WO PCT/EP2023/080790 patent/WO2024104802A1/de not_active Ceased
- 2023-11-06 KR KR1020257020056A patent/KR20250100760A/ko active Pending
- 2023-11-06 EP EP23801420.3A patent/EP4619353A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024104802A1 (de) | 2024-05-23 |
| JP2025537849A (ja) | 2025-11-20 |
| CN120379946A (zh) | 2025-07-25 |
| DE102022130575A1 (de) | 2024-05-23 |
| KR20250100760A (ko) | 2025-07-03 |
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