EP4361299A1 - Bonddraht für halbleiterbauelement - Google Patents

Bonddraht für halbleiterbauelement Download PDF

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Publication number
EP4361299A1
EP4361299A1 EP22827971.7A EP22827971A EP4361299A1 EP 4361299 A1 EP4361299 A1 EP 4361299A1 EP 22827971 A EP22827971 A EP 22827971A EP 4361299 A1 EP4361299 A1 EP 4361299A1
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EP
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Prior art keywords
wire
mass
bonding
concentration
less
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EP22827971.7A
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English (en)
French (fr)
Inventor
Daizo Oda
Motoki ETO
Takashi Yamada
Teruo Haibara
Ryo Oishi
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Nippon Micrometal Corp
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Nippon Micrometal Corp
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Publication of EP4361299A1 publication Critical patent/EP4361299A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent

Definitions

  • the present invention relates to a bonding wire for semiconductor devices. Furthermore, the present invention relates to a semiconductor device including the bonding wire.
  • a bonding method for bonding wires is typically a thermocompression bonding method using ultrasonic waves, and a general-purpose bonding device, a capillary jig used for bonding by inserting a bonding wire therethrough, and the like are used.
  • a bonding process is carried out by performing 1st bonding of a wire part onto an electrode on the semiconductor chip; forming a loop; and finally performing 2nd bonding of a wire part onto the lead frame or an external electrode on the substrate.
  • a tip end of wire is heated and melted by arc heat input to form a free air ball (FAB: Free Air Ball; hereinafter also simply referred to as “ball” or “FAB”) through surface tension, and then this ball part is compression-bonded (hereinafter referred to as "ball-bonded”) onto the electrode on the semiconductor chip.
  • FAB Free Air Ball
  • this ball part is compression-bonded (hereinafter referred to as "wedge-bonded”) onto the external electrode by applying ultrasonic waves and load to the wire part without forming the ball.
  • Au has been the common material of the bonding wire, but has been being replaced with copper (Cu) mainly for LSI use (e.g., Patent Literatures 1 to 3). Meanwhile, for on-vehicle device use on the background of recent proliferation of electric vehicles and hybrid vehicles, and further for power device (power semiconductor device) use in large power equipment such as air conditioners and photovoltaic power generation systems, there has been a growing demand for replacement with Cu that has high efficiency and reliability due to its high thermal conductivity and fusing current characteristic.
  • Cu has the drawback of being more susceptible to oxidation than Au.
  • a method of preventing the surface oxidation of the Cu bonding wire there has been proposed a structure in which a surface of a Cu core material is coated with a metal such as Pd and Ni (Patent Literature 4).
  • a Pd-coated Cu bonding wire which has an improved bond reliability of the 1st bonded part by coating a surface of a Cu core material with Pd and adding Pd and Pt into the Cu core material (Patent Literature 5).
  • the on-vehicle devices and the power devices tend to be exposed to higher temperature as compared with general electronic devices during operation, and the bonding wire used therefor is required to exhibit a favorable bond reliability in a rigorous high-temperature environment.
  • the present inventors have conducted the evaluation based on the characteristics required for the on-vehicle devices and the like and found that, in some cases, the conventional Cu bonding wires with the Pd-coating layers cause a galvanic corrosion in a high-temperature environment and fail to sufficiently achieve the bond reliability of the 2nd bonded parts.
  • the bare Cu bonding wire without the Pd-coating layer does not cause galvanic corrosion, but provides a poor FAB shape and consequently an inferior compression-bonding shape of the 1st bonded part and thus cannot be sufficiently applied for a fine-pitch bonding required for high-density mounting.
  • bond reliability of the 1st bonded part cannot be sufficiently obtained in a high-temperature environment in some cases.
  • HTSL High Temperature Storage Life Test
  • An object of the present invention is to provide a novel Cu bonding wire that achieves a favorable FAB shape and favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability of both of the 1st bonded part and the 2nd bonded part even in a rigorous high-temperature environment.
  • the present invention includes the following content.
  • the present invention can provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability of both of the 1st bonded part and the 2nd bonded part even in a rigorous high-temperature environment.
  • a bonding wire for semiconductor devices according to the present invention (hereinafter also simply referred to as a “wire of the present invention” or “wire”) is characterized in that the bonding wire includes:
  • the bonding wires used for the on-vehicle devices and the power devices are required to exhibit a favorable bond reliability under a rigorous high-temperature environment.
  • the bonding wires used for the on-vehicle devices require the bond reliability in a high-temperature environment exceeding 150°C.
  • the present inventors have conducted the evaluation based on the characteristics required for the on-vehicle devices and the like and found that, in some cases, the conventional Cu bonding wires with the Pd-coating layers cause a galvanic corrosion in a high-temperature environment and fail to sufficiently achieve the bond reliability of the 2nd bonded parts.
  • the bare Cu bonding wire without the Pd-coating layer does not cause a galvanic corrosion, but provides a poor FAB shape and consequently an inferior compression-bonding shape of the 1st bonded part and thus cannot be sufficiently applied for a fine-pitch bonding required for high-density mounting. Furthermore, the bond reliability of the 1st bonded part cannot be sufficiently obtained in some cases in a high-temperature environment.
  • HTSL is often conducted, in which a sample is exposed to an environment with a temperature of 175°C, assuming a rigorous high-temperature environment.
  • the present inventors have conducted HTSL at a temperature of 200°C, assuming a more rigorous high-temperature environment.
  • the present inventors have found that it is possible to achieve a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieve favorable bond reliability of both of the 1st bonded part and the 2nd bonded part even in a rigorous high-temperature environment such as at a temperature 200°C, irrespective of the wire diameter, by using a bonding wire for semiconductor devices, which including:
  • the wire of the present invention includes a core material of Cu or Cu alloy (hereinafter, also simply referred to as "Cu core material").
  • the Cu core material is not particularly limited as long as it is made of Cu or Cu alloy, and there may be used a known Cu core material constituting a conventional Pd-coated Cu wire which has been known as a bonding wire for semiconductor devices.
  • the concentration of Cu in the Cu core material may be, for example, 97 atomic% or more, 97.5 atomic% or more, 98 atomic% or more, 98.5 atomic% or more, 99 atomic% or more, 99.5 atomic% or more, 99.8 atomic% or more, 99.9 atomic% or more, 99.98 atomic% or more, or 99.99 atomic% or more in the center (axial core part) of the Cu core material.
  • the Cu core material preferably contains In, Ag so that the concentration of at least one of In and Ag relative to the entire wire is 1 ppm by mass or more. Preferable range of the concentration of In, Ag relative to the entire wire is described later.
  • the Cu core material may also contain one or more dopants selected from the first additive element, the second additive element and the third additive element described later, for example. Preferable contents of these dopants are described later.
  • the Cu core material consists of Cu and inevitable impurities.
  • the Cu core material consists of Cu, at least one of In and Ag, and inevitable impurities.
  • the Cu core material consists of Cu; one or more elements selected from the first additive element, the second additive element and the third additive element described later; and inevitable impurities.
  • the Cu core material consists of Cu; at least one of In and Ag ; one or more elements selected from the first additive element, the second additive element and the third additive element described later; and inevitable impurities.
  • the term "inevitable impurities" used in relation to the Cu core material encompasses elements constituting the coating layer containing conductive metal other than Cu described later.
  • the wire of the present invention includes a coating layer containing conductive metal other than Cu (hereinafter, also simply referred to as a "coating layer") formed on a surface of the Cu core material.
  • a coating layer containing conductive metal other than Cu (hereinafter, also simply referred to as a "coating layer") formed on a surface of the Cu core material.
  • the coating layer preferably has a concentration of conductive metal other than Cu of 50 atomic% or more.
  • the coating layer in the wire of the present invention satisfies all of the following conditions (1) to (4).
  • the condition (1) relates to the fact that the coating layer has the region containing Ni as a main component on the core material side, and has the region containing Au and Ni on the wire surface side, in the thickness direction of the coating layer.
  • the wire of the present invention achieves a favorable FAB shape and favorable bond reliability in a high-temperature environment, and also exhibits excellent bondability of the 2nd bonded part. Additionally, by including the coating layer satisfying the condition (1), capillary clogging can be suppressed while the continuous bonding, and productivity of the semiconductor device can be favorably maintained.
  • the coating layer has the region containing Ni as a main component on the core material side in the thickness direction of the coating layer.
  • the "region containing Ni as a main component" used in relation to the coating layer means a region where the concentration of Ni is 50 atomic% or more.
  • the coating layer may contain Au on the wire surface side in addition to Ni, and further contain conductive metal such as Pd.
  • the coating layer contains Ni so that a ratio C Ni /C M of the concentration C Ni (mass%) of Ni to a total concentration C M (mass%) of Ni, Au, and Pd relative to the entire wire is preferably 0.5 or more, more preferably 0.6 or more, further preferably 0.7 or more, or 0.8 or more.
  • An upper limit of the ratio C Ni /C M described above is not particularly limited as long as the conditions (2) to (4) are satisfied, and may be 0.995 or less, or 0.99 or less and the like, for example.
  • the ratio C Ni /C M can be calculated by dividing the concentration C Ni (mass%) of Ni relative to the entire wire measured by a method described in [Measurement of element content] described later by the total concentration C M (mass%) of Ni, Au, and Pd that is similarly measured.
  • the fact that the coating layer has the region containing Ni as a main component on the core material side and has the region containing Au and Ni on the wire surface side, in the thickness direction of the coating layer can be confirmed by performing composition analysis using Auger electron spectroscopy (AES) while digging down the wire from its surface in the depth direction (direction to the center of the wire) by Ar sputtering.
  • AES Auger electron spectroscopy
  • a change in concentration of each element in the direction from the surface of the wire toward the depth (center) of the wire is obtained by performing 1) a composition analysis of the wire surface, and then repeating 2) a sputtering process with Ar and 3) a surface composition analysis after the sputtering treatment, and the above factors can be confirmed from the concentration profile.
  • the unit of depth was in terms of SiO 2 .
  • FIG. 1 is a schematic plan view illustrating a wire 1 in which the direction of the wire axis (the length direction of the wire) corresponds to the vertical direction (up-down direction) of FIG.
  • FIG. 1 shows a measuring surface 2 in relation to the wire 1.
  • the width of the measuring surface 2 is represented by a dimension w a of the measuring surface in the direction perpendicular to the wire axis, and the length of measuring surface 2 is represented by a dimension l a of the measuring surface in the direction of the wire axis.
  • a center of width of the wire in the direction perpendicular to the wire axis is positioned to be aligned with a center of width of the measuring surface, and the measuring surface is determined so that the width of the measuring surface is 5% or more and 15% or less of a diameter of the wire.
  • the length of the measuring surface is set to be five times the width of the measuring surface.
  • the width of the wire is indicated by a symbol W
  • the center of the width of the wire is indicated by a one-dot broken line X.
  • the fact that the coating layer has the region containing Ni as a main component on the core material side and the region containing Au and Ni on the wire surface side in the thickness direction of the coating layer is based on a measurement result under the conditions described in the section [Thickness analysis of coating layer by Auger electron spectroscopy (AES)] described later.
  • Ni may show a maximum concentration at a certain depth position (d1), or may show a maximum value over a certain depth range (d1 to d2).
  • a position indicating the maximum concentration of Au is closer to the surface of the wire than a position indicating the maximum concentration of Ni in the concentration profile in the depth direction of the wire.
  • the maximum concentration of Ni may be preferably 80 atomic% or more, more preferably 85 atomic% or more, further preferably 90 atomic% or more, more than 90 atomic%, 92 atomic% or more, 94 atomic% or more, or 95 atomic% or more in the concentration profile in the depth direction of the wire.
  • An upper limit of the maximum concentration of Ni in the coating layer is not particularly limited, and may be 100 mass%, for example.
  • the condition (2) relates to the thickness of the coating layer.
  • the wire of the present invention can achieve a favorable FAB shape and favorable bond reliability of the 1st bonded part in a high-temperature environment.
  • the thickness of the coating layer is 10 nm or more, preferably 12 nm or more, more preferably 14 nm or more, further preferably 15 nm or more, further more preferably 16 nm or more, and particularly preferably 18 nm or more or 20 nm or more.
  • a favorable FAB shape may be achieved
  • a particularly favorable compression-bonding shape of the 1st bonded part may also be achieved, and bond reliability of the 1st bonded part can be improved more easily, which is preferable.
  • the thickness of the coating layer is 18 nm or more.
  • the thickness of the coating layer is less than 10 nm, eccentricity tends to occur during the FAB formation, which deteriorates the FAB shape and the compression-bonding shape of the 1st bonded part.
  • the upper limit of the thickness of the coating layer is, from the viewpoint of achieving a favorable FAB shape, 130 nm or less, preferably 125 nm or less, 120 nm or less, 115 nm or less, 110 nm or less, 105 nm or less, 100 nm or less, 95 nm or less, or 90 nm or less.
  • the thickness of the coating layer is more than 130 nm, irregular shape and melting failure tend to occur during the FAB formation, which tends to deteriorate the FAB shape and also the compression-bonding shape of the 1st bonded part.
  • the thickness of the coating layer in the condition (2) can be determined from the concentration profile in the depth direction described above. First, a boundary between the Cu core material and the coating layer is determined based on the concentration of Cu. The position at which the concentration of Cu is 50 atomic% is determined as the boundary, and then a region where the concentration of Cu is 50 atomic% or more is determined to be the Cu core material and a region where the concentration of Cu is less than 50 atomic% is determined to be the coating layer. In the present invention, the boundary between the Cu core material and the coating layer is not necessarily a crystal grain boundary.
  • the thickness of the coating layer can then be determined, by confirming the concentration profile from the wire surface toward the center of the wire, as a distance from a wire surface position to a depth position where the concentration of Cu as the core material reaches 50 atomic% for the first time.
  • the unit of depth was in terms of SiO 2 .
  • the condition (3) relates to a range of the ratio C Au /C Ni of the concentration C Au (mass%) of Au to the concentration C Ni (mass%) of Ni relative to the entire wire.
  • the wire of the present invention can achieve a favorable FAB shape and a favorable bondability of the 2nd bonded part while achieving favorable bond reliability in a high-temperature environment. Additionally, by including the coating layer satisfying the condition (3), capillary clogging can be suppressed at the time of continuous bonding, and productivity of the semiconductor device can be favorably maintained.
  • the ratio C Au /C Ni is 0.02 or more, preferably 0.04 or more, more preferably 0.05 or more, 0.06 or more, 0.08 or more, or 0.1 or more.
  • the ratio C Au /C Ni is less than 0.02
  • the bondability of the 2nd bonded part tends to be deteriorated
  • occurrence frequency of capillary clogging at the time of continuous bonding also tends to be increased.
  • the upper limit of the ratio C Au /C Ni is 0.7 or less, preferably 0.65 or less, more preferably 0.6 or less, 0.55 or less, 0.5 or less, 0.48 or less, 0.46 or less, or 0.45 or less.
  • the ratio C Au /C Ni is more than 0.7, eccentricity tends to occur during the FAB formation, which deteriorates the FAB shape and the compression-bonding shape of the 1st bonded part.
  • the ratio C Au /C Ni in the condition (3) can be calculated by dividing the concentration C Au (mass%) of Au relative to the entire wire measured by the method described in [Measurement of element content] described later by the concentration C Ni (mass%) of Ni that is similarly measured.
  • the condition (4) relates to the concentration of Au at the surface of the wire.
  • the wire of the present invention can achieve a favorable FAB shape and favorable bondability of the 2nd bonded part. Additionally, by including the coating layer satisfying the condition (4), capillary clogging can be suppressed at the time of continuous bonding, and productivity of the semiconductor device can be favorably maintained.
  • the concentration of Au at the surface of the wire of the present invention is 10 atomic% or more, preferably 15 atomic% or more, more preferably 20 atomic% or more, further preferably 25 atomic% or more, further more preferably 30 atomic% or more, 32 atomic% or more, 34 atomic% or more, 35 atomic% or more, 36 atomic% or more, 38 atomic% or more, or 40 atomic% or more.
  • the concentration of Au at the surface of the wire is less than 10 atomic%, the bondability of the 2nd bonded part tends to be deteriorated, and occurrence frequency of capillary clogging at the time of continuous bonding also tends to be increased.
  • the upper limit of the concentration of Au at the surface of the wire is 90 atomic% or less, preferably 85 atomic% or less, more preferably 80 atomic% or less, 78 atomic% or less, 76 atomic% or less, 75 atomic% or less, 74 atomic% or less, 72 atomic% or less, or 70 atomic% or less.
  • the concentration of Au at the wire surface in the condition (4) can be determined by performing the composition analysis of the wire surface as a measuring surface using an Auger electron spectroscopy (AES) method.
  • AES Auger electron spectroscopy
  • a gas component such as carbon (C), sulfur (S), oxygen (O) and nitrogen (N), a non-metal element, and the like are not considered.
  • composition analysis of the wire surface can be performed under the same conditions as in 1) the composition analysis of the wire surface described in relation to the method of obtaining the concentration profile in the depth direction. Specifically, when performing the composition analysis of the wire surface using Auger electron spectroscopy (AES), the position and dimensions of the measuring surface are determined as follows.
  • AES Auger electron spectroscopy
  • the measuring surface is determined so that a center of width of the measuring surface is aligned with a center of width of the wire in the direction perpendicular to the wire axis, and the width of the measuring surface is 5% or more and 15% or less of a diameter of the wire.
  • the length of the measuring surface is set to be five times the width of the measuring surface.
  • the concentration of Au at the wire surface in the condition (4) described above is based on a result of measurement under the conditions described in [Composition analysis of wire surface using Auger electron spectroscopy (AES)] described later.
  • the coating layer may contain one or more dopants selected from the first additive element, the second additive element and the third additive element described later, for example. Preferable contents of these dopants are described later.
  • the coating layer may also contain Pd as conductive metal other than Cu.
  • the coating layer may contain a certain amount of Pd so that a ratio C Pd /C Ni of a concentration C Pd (mass%) of Pd to the concentration C Ni (mass%) of Ni relative to the entire wire is 0.8 or less, 0.6 or less, 0.5 or less, 0.4 or less, 0.3 or less, 0.2 or less, 0.12 or less, 0.11 or less, 0.1 or less, 0.08 or less, 0.06 or less, or 0.05 or less.
  • a lower limit of the ratio C Pd /C Ni is not particularly limited, and may be 0.0001 or more, 0.0005 or more, or 0.001 or more, for example.
  • the coating layer consists of Ni and Au; and inevitable impurities.
  • the coating layer consists of Ni and Au; at least one of In and Ag; and inevitable impurities.
  • the coating layer consists of Ni and Au; one or more elements selected from Pd, the first additive element, the second additive element and the third additive element described later; and inevitable impurities.
  • the coating layer consists of Ni and Au; at least one of In and Ag; one or more elements selected from Pd, the first additive element, the second additive element and the third additive element described later; and inevitable impurities.
  • the term "inevitable impurities" used in relation to the coating layer encompasses elements constituting the Cu core material.
  • the wire of the present invention contains at least one of In and Ag.
  • the wire of the present invention can achieve a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieve favorable bond reliability of both of the 1st bonded part and the 2nd bonded part in a high-temperature environment.
  • the wire of the present invention includes the coating layer that satisfies all of the conditions (1) to (4) described above, and satisfies at least one of the following conditions (i) and (ii):
  • the condition (i) relates to the concentration of In relative to the entire wire.
  • the concentration of In relative to the entire wire is 1 ppm by mass or more, preferably 2 ppm by mass or more, 3 ppm by mass or more, 4 ppm by mass or more, or 5 ppm by mass or more, more preferably 6 ppm by mass or more, 8 ppm by mass or more, or 10 ppm by mass or more, further preferably 20 ppm by mass or more, 30 ppm by mass or more, or 40 ppm by mass or more, further more preferably 50 ppm by mass or more.
  • the concentration of In relative to the entire wire is 50 ppm by mass or more, the bonding wire that achieves favorable bond reliability of the 2nd bonded part in a rigorous high-temperature environment, irrespective of the wire diameter, can be provided easily, which is preferable.
  • the upper limit of the concentration of In relative to the entire wire may 100 ppm by mass or less, 95 ppm by mass or less, 90 ppm by mass or less and the like, for example, taking cost and other factors into the consideration. This is because even if the In content exceeds the upper limit, the effect of improving the bond reliability of the 2nd bonded part in a high-temperature environment reaches a plateau.
  • the concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less.
  • the condition (ii) relates to the concentration of Ag relative to the entire wire.
  • the concentration of Ag relative to the entire wire is 1 ppm by mass or more, preferably 2 ppm by mass or more, 3 ppm by mass or more, 4 ppm by mass or more, or 5 ppm by mass or more, more preferably 10 ppm by mass or more, 20 ppm by mass or more, 30 ppm by mass or more, 40 ppm by mass or more, or 50 ppm by mass or more, further preferably 60 ppm by mass or more, or 80 ppm by mass, further more preferably 100 ppm by mass or more.
  • the concentration of Ag relative to the entire wire is 100 ppm by mass or more, the bonding wire that achieves favorable bond reliability of the 2nd bonded part in a rigorous high-temperature environment, irrespective of the wire diameter, can be provided easily, which is preferable.
  • the upper limit of the concentration of Ag relative to the entire wire may 500 ppm by mass or less, 480 ppm by mass or less, 460 ppm by mass or less, 450 ppm by mass or less and the like, for example, taking cost and other factors into the consideration. This is because even if the Ag content exceeds the upper limit, the effect of improving the bond reliability of the 2nd bonded part in a high-temperature environment reaches a plateau.
  • the concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.
  • the wire of the present invention satisfies at least one of the following conditions (i) and (ii):
  • a total concentration of In and Ag relative to the entire wire is 1 ppm by mass, preferably 2 ppm by mass or more, 3 ppm by mass or more, 4 ppm by mass or more, or 5 ppm by mass or more, more preferably 6 ppm by mass or more, 8 ppm by mass or more, or 10 ppm by mass or more, further preferably 20 ppm by mass or more, 30 ppm by mass or more, or 40 ppm by mass, further more preferably 50 ppm by mass or more, 60 ppm by mass or more, or 70 ppm by mass or more, and the upper limit is preferably 600 ppm by mass or less, more preferably 550 ppm by mass or less, further preferably 500 ppm by mass or less.
  • In and Ag may be contained in either one of the Cu core material and the coating layer, or may be contained in both of them. From the viewpoint of improving the bond reliability in a high-temperature environment, particularly from the viewpoint of providing the bonding wire that achieves favorable bond reliability of 2nd bonded part in a rigorous high-temperature environment, irrespective of the wire diameter, In and Ag are preferably contained in the Cu core material.
  • the wire of the present invention may further contain one or more elements selected from the group consisting of B, P and Mg ("first additive element").
  • first additive element the total concentration of the first additive element is preferably 1 ppm by mass or more relative to the entire wire. This makes it possible to provide a bonding wire that achieve a more favorable compression-bonding shape of the 1st bonded part.
  • the total concentration of the first additive element relative to the entire wire is more preferably 2 ppm by mass or more, and further preferably 3 ppm by mass or more, 5 ppm by mass or more, 8 ppm by mass or more, 10 ppm by mass or more, 15 ppm by mass or more, or 20 ppm by mass or more.
  • the total concentration of the first additive element is preferably 100 ppm by mass or less, and more preferably 90 ppm by mass or less, 80 ppm by mass or less, 70 ppm by mass or less, 60 ppm by mass or less or 50 ppm by mass or less.
  • the wire of the present invention contains the first additive element, and the total concentration of the first additive element is 1 ppm by mass or more and 100 ppm by mass or less relative to the entire wire.
  • the first additive element may be contained in either one of the Cu core material and the coating layer, or may be contained in both of them.
  • the first additive element is preferably contained in the Cu core material from the viewpoint of providing a bonding wire that achieves a further favorable compression-bonding shape of the 1st bonded part.
  • the wire of the present invention may further contain one or more elements selected from the group consisting of Se, Te, As and Sb ("second additive element").
  • the total concentration of the second additive element is preferably 1 ppm by mass or more relative to the entire wire. This makes it possible to improve the bond reliability of the 1st bonded part in a high-temperature environment.
  • the total concentration of the second additive element relative to the entire wire is more preferably 2 ppm by mass or more, and further preferably 3 ppm by mass or more, 5 ppm by mass or more, 8 ppm by mass or more, 10 ppm by mass or more, 15 ppm by mass or more, or 20 ppm by mass or more.
  • the total concentration of the second additive element is preferably 100 ppm by mass or less, and further preferably 90 ppm by mass or less, 80 ppm by mass or less, 70 ppm by mass or less, 60 ppm by mass or less, or 50 ppm by mass or less.
  • the wire of the present invention contains the second additive element, and the total concentration of the second additive element is 1 ppm by mass or more and 100 ppm by mass or less relative to the entire wire.
  • the second additive element may be contained in either one of the Cu core material and the coating layer, or may be contained in both of them. From the viewpoint of further improving the bond reliability of the 1st bonded part in a high-temperature environment, the second additive element is preferably contained in the coating layer.
  • the coating layer contains the second additive element
  • the second additive element may be contained in the region containing Au and Ni on the wire surface side, or may be contained in the region containing Ni as a main component on the core material side.
  • the second additive element may be contained therein together with Pd.
  • the wire of the present invention may further contain one or more elements selected from the group consisting of Ga and Ge ("third additive element").
  • third additive element the total concentration of the third additive element is preferably 0.011% by mass or more relative to the entire wire. This makes it possible to further improve the bond reliability of the 1st bonded part in a high-temperature environment.
  • the total concentration of the third additive element relative to the entire wire is more preferably 0.015% by mass or more, and more preferably 0.02% by mass or more, 0.025% by mass or more, 0.03% by mass or more, 0.031% by mass or more, 0.035% by mass or more, 0.04% by mass or more, 0.05% by mass or more, 0.07% by mass or more, 0.09% by mass or more, 0.1% by mass or more, 0.12% by mass or more, 0.14% by mass or more, 0.15% by mass or more, or 0.2% by mass or more.
  • the total concentration of the third additive element is preferably 1.5% by mass or less, and more preferably 1.4% by mass or less, 1.3% by mass or less or 1.2% by mass or less. Accordingly, in a preferable embodiment, the wire of the present invention contains the third additive element, and the total concentration of the third additive element is 0.011% by mass or more and 1.5% by mass or less relative to the entire wire.
  • the third additive element may be contained in either one of the Cu core material and the coating layer, or may be contained in both of them.
  • the contents of In, Ag, the first additive element, the second additive element and the third additive element in the wire can be measured by the method described in [Measurement of element content] described later.
  • the total concentration of Cu, Ni, Au and Pd is, for example, 98.4% by mass or more, 98.5% by mass or more, 98.6% by mass or more or 98.7% by mass or more and the like.
  • a proportion of a crystal orientation ⁇ 100> angled at 15° or less to the compression-bonding direction is 30% or more. This can achieve a particularly favorable compression-bonding shape of the 1st bonded part.
  • the bonding process with a bonding wire is carried out by performing 1st bonding of a wire part onto an electrode on the semiconductor chip; forming a loop; and finally performing 2nd bonding of a wire part onto the lead frame or an external electrode on the substrate.
  • a tip end of wire is heated and melted by arc heat input to form an FAB through surface tension, and then this FAB is compression-bonded (ball-bonded) onto the electrode on the semiconductor chip.
  • the present inventors have found that a particularly favorable compression-bonding shape of the 1st bonded part can be achieved by a wire ensuring that, when forming an FAB by using the wire and then measuring crystal orientations in a cross-section of the FAB perpendicular to a compression-bonding direction, a proportion of a crystal orientation ⁇ 100> angled at 15° or less to the compression-bonding direction (hereinafter also simply referred to as a "proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB”) is 30% or more.
  • the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB is more preferably 35% or more, further preferably 40% or more, further more preferably 45% or more, particularly preferably 50% or more, 55% or more, or 60% or more.
  • the wire ensuring the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB of 50% or more can achieve a particularly favorable compression-bonding shape of the 1st bonded part.
  • the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB is 30% or more, more preferably 50% or more.
  • the upper limit of the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB is not particularly limited and may be, for example, 100%, 99.5% or less, 99% or less, 98% or less, or the like.
  • FIG. 2 shows a schematic view where a tip end of the wire 1 is heated and melted by arc heat input to form an FAB 10 through surface tension.
  • the FAB 10 thus formed is compression-bonded to an electrode (not shown) on a semiconductor chip.
  • the compression-bonding direction of the FAB 10 is a direction indicated by an arrow Z (vertical direction (up-down direction) in FIG. 2 ).
  • the cross-section perpendicular to the compression-bonding direction Z is a cross-section to be exposed by cutting the FAB along a dashed line A-A perpendicular to the direction Z.
  • the dashed line A-A serving as a reference for the process of exposing a cross-section is set at a position where the diameter of the exposed cross-section becomes maximum, that is, a position where the diameter of the exposed cross-section becomes D when defining the diameter of the FAB as D.
  • the straight line A-A may be deviated from the intended position in the process of exposing the cross-section, and the diameter of the exposed cross-section may be smaller than D.
  • the diameter of the exposed cross-section is 0.9D or more, such a deviation is acceptable because the effect of the deviation on the proportion of the crystal orientation is negligibly small.
  • the crystal orientation in the cross-section of the FAB perpendicular to the compression-bonding direction can be measured using an Electron Backscattered Diffraction (EBSD) method.
  • the measuring device used for the EBSD method includes a scanning electron microscope and a detector attached thereto.
  • a diffraction pattern of reflected electrons generated by irradiating a sample with an electron beam is projected onto the detector, and the diffraction pattern is analyzed to determine the crystal orientation at each measurement point.
  • a dedicated software OIM analysis manufactured by TSL Solutions, for example
  • the proportion of a specific crystal orientation can be calculated by inspecting the cross-section of the FAB perpendicular to the compression-bonding direction as an inspection surface, and using an analysis software dedicated to the measuring device.
  • the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB is defined as a percentage of the area of the crystal orientation ⁇ 100> relative to the measurement area.
  • the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB is obtained as the arithmetic average value of the proportion values obtained by measuring three or more FABs.
  • the present inventors infer as follows about the reason why the wire having the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB of 30% or more can achieve a particularly favorable compression-bonding shape of the 1st bonded part.
  • the FAB formed using the wire of the present invention is mainly composed of Cu or Cu alloy serving as a core material, and its crystal structure is a face-centered cubic structure. In a case of having such a crystal structure, if the crystal orientation in the cross-section perpendicular to the compression-bonding direction is ⁇ 100>, the metal slips in the direction of 45 degrees relative to the compression-bonding surface and deforms.
  • the FAB deforms in the direction of 45 degrees relative to the compression-bonding surface and deforms while radially spreading relative to the plane parallel to the compression-bonding surface.
  • the compression-bonding shape becomes closer to a true circle.
  • the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB tends to fall within a desired range by adjusting the thickness of the coating layer, Ni concentration in the coating layer, and Cu purity of the core material.
  • the present inventors infer as follows about the reason why the thickness of the coating layer has the effect on the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB. Specifically, it is considered that, during the melting stage, Ni in the coating layer is moderately diffusion-mixed toward the center of the FAB, and Cu or Cu alloy that contains the moderately diffusion-mixed Ni in a solid solution form is oriented in the crystal orientation ⁇ 100> relative to the compression-bonding direction.
  • the thickness of the coating layer falls within the predetermined range, the diffusion-mixing of Ni during melting becomes moderate, thereby facilitating the alignment of the crystal orientation ⁇ 100> relative to the compression-bonding direction.
  • the thickness of the coating layer is too thin, the crystal orientation tends to be random without orientation and if the thickness of the coating layer is too thick, other crystal orientations tend to be predominant.
  • the diameter of the wire of the present invention is not particularly limited and may be appropriately determined according to a specific purpose.
  • the diameter of the wire may be 30 ⁇ m or more, 35 ⁇ m or more, or 40 ⁇ m or more, for example.
  • the upper limit of the diameter is not particularly limited and may be 80 um or less, 70 ⁇ m or less, or 50 um or less, for example.
  • raw material copper of high purity (4N to 6N; 99.99 to 99.9999% by mass or more) is processed into a large diameter (diameter of about 3 to 6 mm) by continuous casting to obtain an ingot.
  • examples of an addition method therefor may include a method of causing the dopant to be contained in the Cu core material, a method of causing the dopant to be contained in the coating layer, a method of depositing the dopant on the surface of the Cu core material, and a method of depositing the dopant on the surface of the coating layer. These methods may be combined with each other. The effect of the present invention can be achieved by employing any addition method.
  • a copper alloy containing a required concentration of dopant may be used as a raw material to manufacture the Cu core material.
  • a dopant component having high purity may be directly added to Cu, or alternatively, a mother alloy containing a dopant component at a concentration of about 1% may be used.
  • the dopant may be contained in Ni, Au, Pd plating bath at the time of forming the coating layer (in a case of wet plating), or in a target material (in a case of dry plating).
  • At least one type of deposition treatment selected from (1) application of aqueous solution ⁇ drying ⁇ heat treatment, (2) a plating method (wet), and (3) a vapor deposition method (dry) may be performed while the surface of the Cu core material or the surface of the coating layer being as a deposition surface.
  • the ingot having a large diameter is subjected to forging, rolling, and wire-drawing to manufacture a wire with a diameter of about 0.7 to 2.0 mm (hereinafter also referred to as an "intermediate wire").
  • the coating layer As a method for forming the coating layer on the surface of the Cu core material, an electroplating, an electroless plating, a vapor deposition, and the like can be used. Among them, the electroplating is preferable industrially because it can stably control film thickness.
  • the coating layer may be formed on the surface of the intermediate wire. The coating layer may be deposited at a stage of the ingot having large diameter, or the coating layer may be formed on the surface of the Cu core material after further thinning the intermediate wire by performing the wire-drawing (for example, after carrying out the wire-drawing to a final diameter of the Cu core material).
  • the coating layer may be formed by using an Ni plating liquid, a Pd plating liquid, or a plating liquid containing Ni and Pd at a predetermined ratio in accordance with a desired configuration of the coating layer.
  • the coating layer may be formed by providing a Pd layer or a Pd-Ni alloy layer using a Pd plating liquid or a plating liquid containing Ni and Pd at a predetermined ratio.
  • a predetermined coating layer may be formed by performing strike plating with conductive metal on the surface of the Cu core material.
  • the region containing Au and Ni included in the coating layer on the wire surface side can be formed by providing an Au layer on the surface side of the coating layer by the same method as described above.
  • the wire-drawing process can be performed by using a continuous wire-drawing machine in which a plurality of diamond-coated dies can be set. If necessary, heat treatment may be performed during the wire-drawing process. Constituent elements are diffused to each other between the Au layer at the surface of the wire and the lower Ni layer (the Pd layer or the Pd-Ni alloy layer, if provided) by heat treatment, which makes it possible to form a region containing Au and Ni on the wire surface side of the coating layer.
  • a method that promotes alloying by continuously sweeping the wire at a constant speed in an electric furnace at a constant furnace temperature is preferable in that the Au concentration at the wire surface can be securely controlled to fall within a desired range.
  • a method of depositing an alloy region originally containing Au and Ni may be employed.
  • the wire of the present invention can achieve a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability of both of the 1st bonded part and the 2nd bonded part in a high-temperature environment.
  • the bonding wire of the present invention can be suitably used as bonding wires particularly for on-vehicle devices and power devices.
  • the semiconductor device can be manufactured by connecting the electrode on the semiconductor chip to the lead frame or the electrode on the circuit board by using the bonding wire for semiconductor devices of the present invention.
  • the semiconductor device includes a circuit board, a semiconductor chip, and a bonding wire for electrically connecting the circuit board and the semiconductor chip with each other, and is characterized in that the bonding wire is the wire of the present invention.
  • the circuit board and the semiconductor chip are not particularly limited, and a known circuit board and semiconductor chip that may be used for constituting the semiconductor device may be used.
  • a lead frame may be used in place of the circuit board.
  • the semiconductor device may include a lead frame and a semiconductor chip mounted on the lead frame.
  • Examples of the semiconductor device may include various semiconductor devices used for electric products (for example, a computer, a cellular telephone, a digital camera, a television, an air conditioner, a solar power generation system), vehicles (for example, a motorcycle, an automobile, an electric train, a ship, and an aircraft), and the like.
  • electric products for example, a computer, a cellular telephone, a digital camera, a television, an air conditioner, a solar power generation system
  • vehicles for example, a motorcycle, an automobile, an electric train, a ship, and an aircraft
  • the raw material was first charged into a graphite crucible and melted by heating to 1090 to 1500°C in an inert atmosphere such as an N 2 gas or Ar gas using a high-frequency furnace. Then, an ingot with a diameter of about 3 to 6 mm was obtained by continuous casting. Next, the ingot thus obtained was drawn to manufacture an intermediate wire with a diameter of about 0.7 to 2.0 mm, and then, wire-drawing processing and the like were continuously performed thereon using dies to further reduce the diameter of the wire to be coated. In the wire drawing process, a commercially available lubricant was used, and the wire-drawing speed was set to 20 to 150 m/min.
  • the coating layer For forming the coating layer, an acid washing with hydrochloric acid or sulfuric acid was performed to remove an oxide film on the wire surface, an Ni layer was formed to cover the entire surface of the Cu alloy as the core material, and an Au layer was provided on the surface thereof. In some examples, a Pd layer was provided after forming the Ni layer, and the Au layer was provided thereafter. An electroplating method was used for forming the Ni layer, the Au layer, and the Pd layer. As an Ni plating liquid, an Au plating liquid, and a Pd plating liquid, commercially available plating liquids were prepared and used after appropriately adjusted.
  • the wire was further subjected to wire-drawing processing and the like to be processed to have a final wire diameter of ⁇ 50 ⁇ m.
  • intermediate heat treatment was performed 1 to 2 times at 300 to 700°C for 2 to 15 seconds as needed.
  • the intermediate heat treatment was performed while continuously sweeping the wire under flowing of an N 2 gas or Ar gas.
  • a refining heat treatment was performed while continuously sweeping the wire under flowing of an N 2 gas or Ar gas.
  • the heat treatment temperature for the refining heat treatment was 200 to 600°C
  • the wire feeding speed was 20 to 200 m/min
  • the heat treatment time was 0.2 to 1.0 seconds. If the coating layer was thin or the Au concentration was low, the heat treatment temperature was set to be lower and the wire feeding speed was set to be higher. In the opposite case, the heat treatment temperature was set to be higher and the wire feeding speed was set to be lower.
  • the concentration of Au at the surface of the wire was determined by performing a measurement using the Auger electron spectroscopy (AES) where the measuring surface was a surface of the wire as follows.
  • AES Auger electron spectroscopy
  • the bonding wire to be measured was fixed to the sample holder in a linear arrangement.
  • the measuring surface was determined so that the center of width of the measuring surface was aligned with the center of width of the wire in the direction perpendicular to the wire axis, and the width of the measuring surface was 5% or more and 15% or less of the diameter of the wire.
  • the length of the measuring surface was set to be five times the width of the measuring surface.
  • the composition analysis was performed on the surface of the wire under a condition of acceleration voltage of 10 kV to obtain a surface Au concentration (atomic%).
  • composition analysis using the AES was performed on the measuring surfaces at three points which were separated from each other by 1 mm or more in the direction of the wire axis, and an arithmetic average value thereof was employed.
  • a gas component such as carbon (C), sulfur (S), oxygen (O), or nitrogen (N), a nonmetallic element, and the like were not considered.
  • a depth analysis using AES was used for the thickness analysis of the coating layer.
  • the depth analysis using AES analyzes a change in a composition in the depth direction by alternately performing a composition analysis and sputtering, so that a change in concentration of each element in the direction from the surface of the wire toward the depth (center) of the wire (so-called a concentration profile in the depth direction) can be obtained.
  • the concentration profile in the depth direction was obtained with AES by performing 1) a composition analysis of the wire surface, and then repeating 2) sputtering process with Ar and 3) a surface composition analysis after the sputtering treatment.
  • the sputtering treatment in 2) was performed at an acceleration voltage of 2 kV with Ar + ion.
  • the dimensions of the measuring surface and the conditions for the composition analysis by the AES were the same as those described in [Composition analysis of wire surface using Auger electron spectroscopy (AES)] described above.
  • the concentration profile in the depth direction was obtained for the measuring surfaces at three points which were separated from each other by 1 mm or more in the direction of the wire axis.
  • the concentration profile in the depth direction was confirmed from the wire surface toward the center of the wire, and a distance from the wire surface position to the depth position where the concentration of Cu as the core material reaches 50 atomic% for the first time was determined as a measured thickness of the coating layer.
  • An arithmetic average value of numerical values obtained for the measuring surfaces at three points was employed as the thickness of the coating layer.
  • the depth measured by the AES analysis is obtained as the product of the sputtering rate and time. Since the sputtering rate is generally measured using a reference sample SiO 2 , the depth analyzed using AES is represented by an SiOz equivalent value. Thus, the unit for the thickness of the coating layer was in terms of SiO 2 .
  • the maximum concentration thereof was obtained from the position where the concentration of Ni becomes maximum.
  • the arithmetic average value of the numerical values obtained for the measuring surfaces at three points was employed as the maximum concentration of Ni.
  • the wire according to the example it was confirmed that there was the region containing Ni as a main component on the core material side, there was the region containing Au and Ni on the wire surface side, the maximum concentration of Ni is 80 atomic% or more, and the position indicating the maximum concentration of Au was closer to the surface than the position indicating the maximum concentration of Ni.
  • the coating layer has a region containing Pd
  • the position indicating the maximum concentration of Pd is closer to the surface than the position indicating the maximum concentration of Ni, and the position indicating the maximum concentration of Pd is present between the position indicating the maximum concentration of Au and the position indicating the maximum concentration of Ni.
  • the contents of Au, Ni, In, Ag, Pd, the first additive element, the second additive element, and the third additive element in the wire were detected as the concentration of elements contained in the entire wire by analyzing a liquid in which the bonding wire was dissolved with a strong acid using an ICP emission spectrometer or an ICP mass spectrometer.
  • ICP-OES PS3520UVDDII
  • ICP-MS ICP-MS
  • the total concentration C M (mass%) of Ni, Au, and Pd was calculated by totaling concentrations of Ni, Au, and Pd.
  • the FAB was formed with a current value of 30 to 75 mA, an EFO gap of 762 ⁇ m, and a tail length of 500 ⁇ m while flowing an N 2 + 5% H 2 gas at a flow rate of 0.4 to 0.6 L/min.
  • the diameter of the FAB was in the range of 1.5 to 1.9 times the wire diameter.
  • the FAB shape was determined to be favorable if it had a true spherical shape and determined to be failure if it showed eccentricity, irregular shape, or poor melting. Evaluation was then performed in accordance with the following criteria.
  • the FAB was formed using the commercially available wire bonder under the conditions described in the section [FAB shape] noted above, and the crystal orientation was measured where the measuring surface was a cross-section of the FAB perpendicular to the compression-bonding direction.
  • the cross-section of the FAB perpendicular to the compression-bonding direction refers to a cross-section to be exposed by cutting the FAB along a dashed line A-A shown in FIG. 2 , and the dashed line A-A serving as a reference was set at the position where the diameter of the exposed cross-section became maximum.
  • the EBSD method was used for the measurement, and the proportion of the crystal orientation ⁇ 100> was calculated according to the above-mentioned procedure by using the analysis software included in the apparatus.
  • the proportion of the crystal orientation ⁇ 100> in the cross-section of the FAB was determined by arithmetically averaging the values of the proportion obtained by measuring three FABs.
  • 2nd bonding window test is a test for determining the number of conditions with which the bonding was possible among a total of 25 conditions for 2nd bonding. Specifically, the test is conducted under a total of 25 conditions that indicates 5 stages of ultrasonic current at the time of 2nd bonding from 140 mA to 180 mA in 10 mA increments in the horizontal axis, and 5 stages of load at the time of 2nd bonding from 80 gf to 120 gf in 10 gf increments in the vertical axis.
  • the bond reliability of the 1st bonded part was evaluated by a High Temperature Storage Life Test (HTSL).
  • HTSL High Temperature Storage Life Test
  • a sample was prepared by performing ball bonding, using a commercially available wire bonder, on an electrode that was disposed by depositing an Al-1.0 mass% Si-0.5 mass% Cu alloy having a thickness of 2.0 ⁇ m on a Si substrate on a general metal frame.
  • the resultant sample was sealed by a commercially available thermosetting epoxy resin to manufacture a sample for testing the bond reliability of the 1st bonded part.
  • the ball was formed under the conditions described in the section [FAB shape] noted above.
  • the manufactured sample for bond reliability evaluation was exposed to an environment with a temperature of 200°C using a high-temperature thermostatic device.
  • the shear test on the ball bonded part was performed every 500 hours, and a time until a value of shear force became half of the initial shear force was determined to be the bonding life of the 1st bonded part. An arithmetic average value of measurement values of 50 ball bonded parts randomly selected was used for the value of the shear force.
  • the shear test after the High Temperature Storage Life Test was performed after removing the resin by acid treatment, and exposing the ball bonded part. Evaluation was then performed in accordance with the following criteria.
  • the bond reliability of the 2nd bonded part was evaluated by a High Temperature Storage Life Test (HTSL).
  • HTSL High Temperature Storage Life Test
  • a sample was prepared by performing wedge bonding onto leads of a lead frame using the commercially available wire bonder.
  • the resultant sample was sealed by a commercially available thermosetting epoxy resin to manufacture a sample for testing the bond reliability of the 2nd bonded part.
  • An Fe-42 atomic% Ni alloy lead frame plated with 1 to 3 ⁇ m Ni/Pd/Au was used for the lead frame.
  • the manufactured sample for bond reliability evaluation was exposed to an environment with a temperature of 200°C using a high-temperature thermostatic device.
  • the pull test on the wedge bonded part was performed every 500 hours, and a time until a value of pull force became half of the initial pull force was determined to be the bonding life of the 2nd bonded part.
  • the evaluation of the crushed shape of ball a case in which a crushed shape was close to true circle was determined to be favorable, and a case in which a crushed shape was an oval shape or a petal shape was determined to be failure. Evaluation was then performed in accordance with the following criteria.
  • All of the wires of Example Nos. 1 to 35 included the coating layer that satisfied all of the conditions (1) to (4) specified in this specification, and contains 1 ppm by mass or more of at least one of In and Ag relative to the entire wire, and it was confirmed that they achieved a favorable FAB shape and favorable bondability of the 2nd bonded part, and further achieved favorable bond reliability of both of the 1st bonded part and 2nd bonded part in a high-temperature environment with a temperature of 200°C. Particularly, the wires of Example Nos.
  • 1, 3, 4, 10, 12, 20 to 24, 26, 29 to 31, and 33 to 35 included the coating layer that satisfied all of the conditions (1) to (4) specified in this specification, in which the contents of In and Ag relative to the entire wire are in the preferable range thereof, and it was confirmed that they achieved an especially excellent bond reliability of the 2nd bonded part in a high-temperature environment with a temperature of 200°C even when the wire diameter was relatively large such as 50 ⁇ m.
  • Example Nos. 10 to 13, 24 to 26, 32, and 33 containing the first additive element of 1 ppm by mass or more in total achieved an especially excellent compression-bonding shape of the 1st bonded part.
  • the wires of Example Nos. 14 to 18, 24, 26, and 32 to 35 containing the second additive element of 1 ppm by mass or more in total achieved an especially excellent bond reliability of the 1st bonded part in a high-temperature environment.
  • the wires of Example Nos. 19 to 22, 25, 26, and 33 to 35 containing the third additive element of 0.011% by mass or more in total achieved an especially excellent bond reliability of the 1st bonded part in a high-temperature environment.
  • the wires of Comparative Example Nos. 1 to 7 included the coating layer that did not satisfy at least one of the conditions (1) to (4) specified in this specification or a concentration of In or Ag relative to the entire wire was 1 ppm by mass or less, and it was confirmed that at least one of the FAB shape, the bondability of the 2nd bonded part, and at least one of the bond reliability of the 1st bonded part and the bond reliability of the 2nd bonded part was poor.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
EP22827971.7A 2021-06-25 2022-03-16 Bonddraht für halbleiterbauelement Pending EP4361299A1 (de)

Applications Claiming Priority (2)

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JP2021105513 2021-06-25
PCT/JP2022/012062 WO2022270051A1 (ja) 2021-06-25 2022-03-16 半導体装置用ボンディングワイヤ

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JP (2) JPWO2022270051A1 (de)
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TW (2) TW202301496A (de)
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Publication number Priority date Publication date Assignee Title
JPS6148543A (ja) 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JP2005167020A (ja) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP4672373B2 (ja) * 2005-01-05 2011-04-20 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP6254841B2 (ja) * 2013-12-17 2017-12-27 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP6167227B2 (ja) * 2014-04-21 2017-07-19 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
SG10201408586XA (en) 2014-12-22 2016-07-28 Heraeus Materials Singapore Pte Ltd Corrosion and moisture resistant bonding wire
SG11201604432SA (en) * 2015-06-15 2017-01-27 Nippon Micrometal Corp Bonding wire for semiconductor device
EP3136435B1 (de) 2015-07-23 2022-08-31 Nippon Micrometal Corporation Verbindungsdraht für halbleiterbauelement
JP6047214B1 (ja) * 2015-11-02 2016-12-21 田中電子工業株式会社 ボールボンディング用貴金属被覆銅ワイヤ
WO2017221434A1 (ja) 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
SG11202001124YA (en) * 2017-08-09 2020-03-30 Nippon Steel Chemical & Material Co Ltd Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
JP2020150116A (ja) 2019-03-13 2020-09-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7168779B2 (ja) * 2019-06-04 2022-11-09 田中電子工業株式会社 パラジウム被覆銅ボンディングワイヤ、パラジウム被覆銅ボンディングワイヤの製造方法、これを用いた半導体装置及びその製造方法
EP4130310A1 (de) * 2020-03-25 2023-02-08 Nippon Micrometal Corporation Bonddraht für halbleiterbauelement

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TW202301498A (zh) 2023-01-01
WO2022270051A1 (ja) 2022-12-29
WO2022270075A1 (ja) 2022-12-29
EP4361300A1 (de) 2024-05-01
CN117529802A (zh) 2024-02-06
TW202301496A (zh) 2023-01-01
KR20240026924A (ko) 2024-02-29
JPWO2022270051A1 (de) 2022-12-29
JPWO2022270075A1 (de) 2022-12-29
KR20240026929A (ko) 2024-02-29
CN117546278A (zh) 2024-02-09

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