EP4055202A1 - Procédé de production d'un revêtement - Google Patents

Procédé de production d'un revêtement

Info

Publication number
EP4055202A1
EP4055202A1 EP20803554.3A EP20803554A EP4055202A1 EP 4055202 A1 EP4055202 A1 EP 4055202A1 EP 20803554 A EP20803554 A EP 20803554A EP 4055202 A1 EP4055202 A1 EP 4055202A1
Authority
EP
European Patent Office
Prior art keywords
coating
semiconductor material
metallic material
application
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20803554.3A
Other languages
German (de)
English (en)
Inventor
Mathias Maier
Othmar Zueger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Surface Solutions AG Pfaeffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions AG Pfaeffikon filed Critical Oerlikon Surface Solutions AG Pfaeffikon
Publication of EP4055202A1 publication Critical patent/EP4055202A1/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/006—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/88—Radar or analogous systems specially adapted for specific applications
    • G01S13/93—Radar or analogous systems specially adapted for specific applications for anti-collision purposes
    • G01S13/931—Radar or analogous systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/027—Constructional details of housings, e.g. form, type, material or ruggedness

Definitions

  • the present invention relates to a method for producing a coating for application to non-metallic surfaces and a coating for application to non-metallic surfaces.
  • Non-metallic surfaces such as the surfaces of components made of plastics, are nowadays often provided with metallic thin-film coatings in order to change their appearance and / or to achieve other desired layer properties.
  • a desired metallic appearance of a component can be achieved, for example, with thin layers of a selected metal, the thickness of which does not have to be more than about 10 to 100 nm in order to make them indistinguishable in appearance from fully metallic components.
  • Such metal layers can be applied using vacuum coating processes such as evaporation or sputtering processes.
  • metal layers have a low transparency in large parts of the electromagnetic spectrum, which makes them unsuitable for some applications.
  • metal layers absorb or reflect electromagnetic waves strongly in frequency ranges between 76 - 77 GHz, which are of interest for use in radar technology, so that metal coatings are not suitable for such applications due to their low permeability in these areas.
  • the metallic-looking color shades that can be achieved in this way are restricted to a narrow range of color coordinates (for example CIE L * a * b * ).
  • the use of thin optical interference layers made of semiconductor materials to produce a metallic exterior has the disadvantage that, due to the high refractive index and the low absorption, there are large differences between reflection minima and maxima in the optical range. This in turn causes an undesirable “glaring” color perception.
  • the object of the present invention to at least partially overcome the aforementioned disadvantages of known coatings and processes for their production remedy.
  • the method according to the invention comprises the steps of applying a semiconductor material to a substrate to form a semiconductor material layer as well as simultaneous or subsequent application of metallic material or additional semiconductor material, wherein the metallic material or the additional semiconductor material for adapting the optical properties of the coating in a targeted manner in the semiconductor material layer is introduced.
  • a semiconductor material is preferably understood to mean a material composed of semiconductor elements or semiconductor compounds, which in particular has an electrical conductivity between 10 4 S / cm and 10 8 S / cm.
  • An additional semiconductor material is preferably understood to mean a semiconductor material different from the semiconductor material for forming a semiconductor material layer, which is preferably only introduced for doping.
  • a metal is preferably understood to mean a material composed of elemental metals.
  • a substrate is understood in particular as a base or a base for a coating, such as a display, a body or the like.
  • Targeted introduction of a metallic material into a semiconductor material layer can objectively include, in particular, selecting the quantity of the metallic material to be applied and / or the application area of the metallic material to be applied.
  • the optical properties can also, in particular, be the absolute and / or relative reflectivity of the coating as a function of the wavelength in the optical range include.
  • the optical properties can relate to the transparency in other frequency ranges of the electromagnetic spectrum, such as in the radar range at 76-77 GHz, or contain the viewing angle dependence of the external appearance.
  • the semiconductor material is added in the form of a pure substance, the semiconductor material preferably being formed from silicon or germanium or selenium or gallium arsenide.
  • the semiconductor material is present as a mixture of different semiconductor materials, the semiconductor materials preferably silicon and / or germanium and / or selenium and / or gallium arsenide.
  • the metallic material can be added in the form of a pure substance, the metallic material preferably being formed from chromium or molybdenum or aluminum or zirconium.
  • the metallic material is present as a mixture of different metals, the metals preferably chromium and / or molybdenum and / or aluminum and / or zirconium can include.
  • the metallic material to be applied and / or the amount of metallic material to be applied and / or the application area of the metallic material to be applied is at least partially based on the absorption coefficient k of the metallic material in the optical range is selected.
  • the differences between reflection minima and reflection maxima of a coating are responsible for an undesirable “glaring” external appearance.
  • metals with a high absorption coefficient k the differences between reflection minima and Effectively minimize reflection maxima of a coating, which are responsible for the undesirable "glaring” external appearance. This is possible in particular because after light rays have entered the coating layer at the first interface of the coating layer due to the increased absorption of the
  • Coating layer (in the optical range), the reflection of the light rays at the second interface of the coating layer is significantly lower, which consequently the destructive and constructive interference at the first and second interface of the
  • the optical range is understood to mean, in particular, the optical frequency range of the electromagnetic spectrum of the light in a range of approx. 350-750 nm. It is also conceivable that the selection of the metallic material to be applied and / or the selection of the amount of the metallic material to be applied and / or the selection of the application area of the metallic material to be applied is at least partially based on the electrical conductivity of the metallic material in the optical range, because this is at least partially related to the absorption coefficient k.
  • the application of the semiconductor material and / or the application of the metallic material takes place via a thermal treatment, the thermal treatment preferably at a temperature of more than than 400 ° C, in particular at a temperature of more than 800 ° C.
  • the “doping” could already be set on the “target”, for example.
  • the amount of applied metallic material and / or the proportion of applied metallic material in relation to the Sum of semiconductor material and metallic material takes place via a variation in the treatment time and / or a variation in the treatment temperature.
  • Such an adjustment of the amount or the proportion of material to be applied is particularly advantageous in coating processes under vacuum conditions because a variation in the treatment temperature and treatment duration can be controlled in a simple manner from outside a coating chamber.
  • the application of the semiconductor material to the substrate takes place at least partially simultaneously with the application of a portion of metallic material, the semiconductor material to be applied and the one to be applied Metal are preferably premixed and / or mixed with one another during application.
  • a semiconductor target alloyed with a suitable metal such as a silicon target alloyed with chromium
  • the metallic material (for example chromium) and the semiconductor material (for example silicon) can be applied from different targets as part of a co-sputtering process.
  • a vapor deposition process to apply the coating in a crucible or the like
  • a premixed material or an alloy of metallic material and semiconductor material could already be used or the materials could be vaporized separately at least partially from two crucibles at the same time.
  • a chemical and / or physical coating process preferably a chemical vapor deposition process (CVD process) and / or a physical vapor deposition process (PVD Process), in particular a plasma-assisted chemical vapor deposition process (PA-CVD process) and / or high-power pulse magnetron sputtering (HIPIMS) and / or a cathodic arc deposition process and / or an electron beam-assisted physical vapor deposition Process (EB-PVD process) takes place.
  • CVD process chemical vapor deposition process
  • PVD Process physical vapor deposition process
  • PA-CVD process plasma-assisted chemical vapor deposition process
  • HIPIMS high-power pulse magnetron sputtering
  • EB-PVD process electron beam-assisted physical vapor deposition Process
  • a negative bias voltage is applied to the substrate to be coated when the semiconductor material is applied (for example when using a direct voltage), the negative bias voltage being less than 200 V, preferably is less than 150 V, in particular less than 100 V.
  • the use of an alternating voltage is also conceivable.
  • a protective gas is used when the semiconductor material is applied, the protective gas preferably being formed in the form of nitrogen and / or argon.
  • the substrate surface is pretreated before application of a semiconductor material to a substrate in order to bring about stronger adhesion of the semiconductor material layer on the substrate, the pretreatment in particular Can include application of an adhesive layer to the substrate surface, wherein the adhesive layer can be designed in particular in the form of a lacquer layer.
  • a protective layer in order to integrate improved protection or additional properties into the coating in question, provision can advantageously also be made for a final application of a protective layer to take place after application of a semiconductor material and simultaneous or subsequent application of metallic material, the protective layer in particular in the form of a Lacquer layer is formed.
  • the invention also relates to a coating for application to non-metallic surfaces, in particular producible using a method described above.
  • the coating comprises a semiconductor material layer with a proportion of metallic material or additional semiconductor material integrated within the semiconductor material layer.
  • the coating according to the invention thus has the same advantages as have already been described in detail with regard to the method according to the invention.
  • it can objectively be provided in particular that the coating is in the form of a monolayer.
  • a small layer thickness can be advantageous here not only for reasons of saving coating material, but also for reasons of saving process time for applying the coating.
  • the coating has a layer thickness of less than 120 nm, preferably a layer thickness of less than 100 nm, in particular a layer thickness of less than 80 nm.
  • the coating has a layer thickness between 20 and 120 nm, preferably a layer thickness between 40 and 100 nm, in particular a layer thickness between 50 and 60 nm.
  • the metallic material is less than 50% by weight, preferably less than 25% by weight, in particular less than 10% by weight, is present in the coating. As the addition of metallic material increases, it is to be expected that the transparency of the coating will decrease in large parts of the electromagnetic spectrum, which is disadvantageous for some applications.
  • the coating With a view to minimizing the differences between reflection minima and reflection maxima of the coating as effectively as possible, provision can advantageously be made for the coating to have an average absorption coefficient k in the optical range of> 2, preferably> 3, in particular> 4.
  • the absorption coefficient k at a specific wavelength could also be used.
  • large differences between reflection minima and reflection maxima of a coating layer lead to undesirable “glaring” color perceptions within the coating layer.
  • the coating is as transparent as possible in the frequency ranges used. It can therefore advantageously be provided that the coating has a transparency of> 80%, preferably> 90%, in particular> 95%, in a frequency range between 76 and 77 GFIz.
  • the semiconductor material is present in the form of a pure substance, the semiconductor material preferably being formed from silicon or germanium or selenium or gallium arsenide.
  • the semiconductor material is present as a mixture of different semiconductor materials, the semiconductor materials preferably silicon and / or germanium and / or selenium and / or gallium arsenide.
  • the metallic material can be in the form of a pure substance, the metallic material preferably being formed from chromium or molybdenum or aluminum or zirconium.
  • the metallic material is present as a mixture of different metals, the metals preferably chromium and / or molybdenum and / or aluminum and / or zirconium can include.
  • 1a-c a schematic representation of a plot of the L value (a), the a value (b) and the b value (c) of an L * a * b color space as a function of the metal content of a coating according to the invention
  • FIG. 3 shows a schematic representation of a plot of the reflection index (%) of various coatings in the wavelength range from 350 nm to 750 nm
  • FIG. 4 shows a schematic representation of a plot of the L value (top), the a value (middle) and the b value (bottom) of an L * a * b color space as a function of the layer thickness of a coating according to the invention according to a first embodiment as well as a reference measurement,
  • FIG. 5 shows a schematic representation of the individual steps of a method according to the invention for producing a coating for application to non-metallic surfaces.
  • FIGS. 1a-c show a schematic representation of a plot of the L value (FIG. 1a), the a value (FIG. 1b) and the b value (FIG. 1c) of an L * a * b color space as a function the metal content of a coating according to the invention.
  • the L, a and b values of the L * a * b color space vary specifically depending on the composition of the coating according to the invention.
  • the proportion of metal in the coating according to the invention is proportional to the evaporation power (in kW).
  • the L value of a coating according to the invention initially decreases with increasing metal content, before it increases briefly at a value of approx. 0.5 kW and then decreases further with further addition of a metallic material.
  • the a-value increases steadily up to a value of approx. 0.5 kW, before it continuously decreases from a value of approx. 0.5 kW.
  • the b-value decreases steadily after the first addition of a metallic material. From the plots according to FIGS. 1a-c it can therefore be seen that the optical properties of the coating according to the invention can be varied in a targeted manner by means of a targeted admixture or application of metallic material.
  • Fig. 2 shows a schematic representation of a plot of the reflection index (%) of various coatings in the wavelength range 350 nm to 750 nm
  • the coating 1 consists of pure silicon
  • the coating 2 is a coating according to the invention with silicon and a low chromium content
  • the coating 3 represents a coating according to the invention with silicon and a high chromium content.
  • the reflection index in the optical range from 350 to 750 nm is clearly dependent on the composition of the coating layer.
  • the course of the reflection index of the three coatings 1-3 in the wavelength range 350 nm to 750 nm is basically similar, but the coating layer 1 (pure Si) shows the highest reflection index between 500 and 750 nm.
  • the coating 2 (Si + little Cr), on the other hand, has a significantly lower reflection index between 500 and 750 nm, which is, however, even greater than that of the coating 3 (Si + a lot of Cr).
  • the coating 3 shows a schematic representation of a plot of the reflection index (%) of various coatings in the wavelength range 350 nm to 750 nm.
  • the coating 1 'here consists of pure silicon
  • the coating 2' is a coating according to the invention with silicon and a high germanium content ( Fall conductor material + doped additional fall conductor material, which is different from the fall conductor material for forming a fall conductor material layer)
  • the coating 4' represents a coating with silicon and a low proportion of germanium.
  • the reflection index in the optical range from 350 to 750 nm is clearly dependent on the composition of the coating layer.
  • the course of the reflection index of the four coatings 1 '-4' in the wavelength range 350 nm to 750 nm is basically similar, but the coating layer 1 '(pure Si) shows the highest reflection index between 500 and 750 nm.
  • the coating 2 '(Si + a lot of Ge) has a lower reflection index between 500 and 750 nm, but it is still is greater than that of the coatings 3 '(Si + medium proportion of Ge) and 4' (Si + low proportion of Ge).
  • FIG. 4 shows a schematic representation of a plot of the L value (top), the a value (middle) and the b value (bottom) of an L * a * b color space as a function of the layer thickness of a coating according to the invention (circle) according to a first embodiment as well as a reference measurement (square),
  • the reference measurements show in principle the same course with regard to the L, a and b values as the coating (Si + Cr), namely that the L value with increasing layer thickness decreases, the a-value increases with increasing layer thickness and the b-value initially remains constant with increasing layer thickness and then decreases slightly.
  • the L and a values, in particular the b values are significantly higher for the pure semiconductor material and consequently achieve a sometimes undesirable, brighter color perception.
  • FIG. 5 shows a schematic representation of the individual steps of a method according to the invention for producing a coating for application to non-metallic surfaces.
  • the method according to the invention initially comprises a first optional step of pretreatment 100 of the substrate surface in order to bring about stronger adhesion of the semiconductor material layer on the substrate.
  • the pretreatment 100 can preferably include the application of an adhesive layer, wherein the adhesive layer can in particular be designed in the form of a lacquer layer.
  • a semiconductor material is applied 120 to a substrate to form a semiconductor material layer, and metallic material is applied 140, the metallic material being introduced into the semiconductor material layer in a targeted manner to adapt the optical properties of the coating.
  • the application 140 of the metallic material can take place simultaneously or also subsequently to the application 120 of the semiconductor material.
  • an application 160 can then optionally be carried out Protective layer take place, wherein the protective layer can be formed in particular in the form of a paint layer or the like.

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  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
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  • Physical Vapour Deposition (AREA)
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  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
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Abstract

L'invention concerne un procédé de production d'un revêtement destiné à être appliqué sur des surfaces non métalliques, comprenant les étapes consistant à appliquer (120) un matériau semi-conducteur sur un substrat afin de former une couche de matériau semi-conducteur, et simultanément ou par la suite appliquer (140) un matériau métallique ou un matériau semi-conducteur supplémentaire, le matériau métallique ou le matériau semi-conducteur supplémentaire étant introduit de manière ciblée dans la couche de matériau semi-conducteur afin d'adapter les propriétés optiques du revêtement.
EP20803554.3A 2019-11-07 2020-11-06 Procédé de production d'un revêtement Pending EP4055202A1 (fr)

Applications Claiming Priority (2)

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US201962931922P 2019-11-07 2019-11-07
PCT/EP2020/081379 WO2021089842A1 (fr) 2019-11-07 2020-11-06 Procédé de production d'un revêtement

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EP4055202A1 true EP4055202A1 (fr) 2022-09-14

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US (1) US20220389560A1 (fr)
EP (1) EP4055202A1 (fr)
JP (1) JP2023500927A (fr)
KR (1) KR20220097462A (fr)
CN (1) CN114651083A (fr)
WO (1) WO2021089842A1 (fr)

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US4051297A (en) * 1976-08-16 1977-09-27 Shatterproof Glass Corporation Transparent article and method of making the same
CA1089798A (fr) * 1977-09-02 1980-11-18 Neil D. Veigel Article transparent et methode de fabrication
US4388344A (en) * 1981-08-31 1983-06-14 United Technolgies Corporation Method of repairing surface defects in coated laser mirrors
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US5535056A (en) * 1991-05-15 1996-07-09 Donnelly Corporation Method for making elemental semiconductor mirror for vehicles
US6793781B2 (en) * 1991-11-29 2004-09-21 Ppg Industries Ohio, Inc. Cathode targets of silicon and transition metal
JP3406959B2 (ja) * 1992-10-16 2003-05-19 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による堆積膜形成方法
KR100291533B1 (ko) * 1997-12-11 2001-07-12 박호군 내식성무반사다이아몬드성경질탄소막및그의제조방법
JP2002220657A (ja) * 2001-01-25 2002-08-09 Kiyousera Opt Kk 薄膜形成装置および薄膜形成方法
US7270891B2 (en) * 2004-11-17 2007-09-18 Northrop Grumman Corporation Mixed germanium-silicon thermal control blanket
EP1763069B1 (fr) * 2005-09-07 2016-04-13 Soitec Méthode de fabrication d'un hétérostructure
CN101802248B (zh) * 2007-09-18 2013-10-16 信越聚合物株式会社 电波透过性装饰构件
US9114760B2 (en) * 2010-11-15 2015-08-25 Zanini Auto Grup, Sa Decorative radome for automotive vehicular applications
JP6511474B2 (ja) * 2014-03-07 2019-05-15 ユニヴァーシティ・オブ・サウス・オーストラリア プラスチック基板のための装飾コーティング
KR102075027B1 (ko) * 2017-11-09 2020-03-12 주식회사 셀코스 다크티탄 색상 도금방법

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CN114651083A (zh) 2022-06-21
US20220389560A1 (en) 2022-12-08
JP2023500927A (ja) 2023-01-11
WO2021089842A1 (fr) 2021-05-14

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