EP4039849B1 - Filmformungsvorrichtung - Google Patents

Filmformungsvorrichtung Download PDF

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Publication number
EP4039849B1
EP4039849B1 EP20870690.3A EP20870690A EP4039849B1 EP 4039849 B1 EP4039849 B1 EP 4039849B1 EP 20870690 A EP20870690 A EP 20870690A EP 4039849 B1 EP4039849 B1 EP 4039849B1
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Prior art keywords
electrode
film forming
plasma
forming device
film
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EP20870690.3A
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English (en)
French (fr)
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EP4039849A4 (de
EP4039849A1 (de
Inventor
Yoshihiko Mochizuki
Tomokazu Seki
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Fujifilm Corp
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Fujifilm Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
    • H05H1/246—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated using external electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Definitions

  • the technology of the present disclosure relates to a film forming device.
  • a film forming device in order to form a functional film such as an optical film, a film forming device by a vacuum film forming method such as coating, sputtering, and plasma chemical vapor deposition (CVD) is used.
  • a vacuum film forming method such as coating, sputtering, and plasma chemical vapor deposition (CVD) is used.
  • a film forming device that forms a film using atmospheric pressure plasma is also known.
  • productivity is high since switching between vacuum and atmospheric pressure is unnecessary and continuous processing is possible, and since a vacuum device is unnecessary, the device configuration can be simplified.
  • a nozzle In most atmospheric pressure plasma film forming devices, a nozzle has a single tube structure (see, for example, JP2008-98128A ), and a film forming device in which the nozzle has a coaxial double tube structure is also known (see, for example, JP2013-01926A and JP2004-91837A ).
  • raw material gas containing a film-forming raw material flows through an inner tube, and plasma-generating gas flows through an outer tube.
  • the plasma-generating gas is guided to a downstream discharge port as a plasma by discharge generated by a pair of electrodes (ground electrode and high voltage application electrode) disposed around the outer tube.
  • the raw material gas is guided to the downstream discharge port through the inner tube.
  • the plasma is gas containing active species such as charged particles (ions, electrons, and the like) and radicals.
  • the plasma merges with the raw material gas to decompose the raw material gas.
  • a product produced by reaction promoted by the decomposition is discharged from the discharge port toward a substrate in a form of jet.
  • JP 2011 202232 A discloses a film deposition apparatus which includes a first flow passage for distributing film deposition gas, a second flow passage for distributing plasma generating gas, an electrode for generating plasma, and a merging unit for merging the first flow passage with the second flow passage.
  • US 2011/298376 A1 discloses a plasma generation device which includes a first plasma generation chamber with a gas feed opening and a plasma exit, a first plasma generation means arranged without exposure in the first chamber space, a second plasma generation chamber with a plasma entry, and a second plasma generation means arranged without exposure in the second chamber space.
  • the nozzle has a double tube structure
  • active species mainly positive ions contained in the plasma flowing in the outer tube
  • Ions which are charged particles, have higher energy than radicals and have an effect of promoting the decomposition of the raw material gas and generating a high-quality film. Therefore, in a case where the ions are trapped in the ground electrode, the amount of decomposition of the raw material gas decreases. Due to the decrease in amount of decomposition, in a case where a component other than a desired component is incorporated into a film to be formed, there is a problem that the purity of the film is lowered and a film quality is deteriorated.
  • the film forming device having a double tube structure there is a problem that it is difficult to obtain a plasma having a uniform distribution at the discharge port.
  • the ignition of the plasma generated between the high voltage electrode and the ground electrode is local discharge in a form of lightning. Therefore, the distribution of the generated plasma may not spread sufficiently in a radial direction of the outer tube during the flow of the plasma toward the discharge port, and may reach the discharge port with non-uniformity.
  • the plasma distribution does not insufficiently spread, the amount of decomposition of the raw material gas decreases, and the quality of the film to be formed is deteriorated.
  • the spread of the plasma distribution in the circumferential direction during the flow of the plasma from an ignition portion to the discharge port becomes insufficient, and the amount of decomposition of the raw material gas decreases.
  • a degree of spread of the plasma distribution in the circumferential direction is also caused by the deterioration in film quality.
  • An object of the technology of the present disclosure is to provide a film forming device having a double tube structure capable of improving a film quality.
  • a film forming device is an atmospheric pressure plasma film forming device in which chemical reaction is promoted by decomposing raw material gas by a plasma generated under an atmospheric pressure, and a product generated by the chemical reaction is deposited on a surface of a substrate.
  • a film forming device 10 has an inner tube 11 as a first nozzle, an outer tube 12 as a second nozzle, a first electrode 13 as a ground electrode, a second electrode 14 as a high voltage application electrode, and a first power supply 15 as a high voltage power supply.
  • the film forming device 10 has a substrate 20 as the object for film formation, a third electrode 21 provided on a back surface side of the substrate 20, and a second power supply 22 for biasing the substrate 20.
  • the inner tube 11 is inserted inside the outer tube 12.
  • the inner tube 11 and the outer tube 12 are circular tubes, respectively, and are disposed such that central axes of the inner tube 11 and the outer tube 12 coincide with each other. That is, the inner tube 11 and the outer tube 12 form a nozzle having a coaxial double tube structure.
  • the inner tube 11 and the outer tube 12 are formed of an insulating material (dielectric material) having a high melting point.
  • a glassy material such as quartz, or a ceramic material such as alumina is used as the insulating material forming the inner tube 11 and the outer tube 12.
  • a longitudinal direction which is a central axis direction of the inner tube 11 and the outer tube 12
  • X direction one direction orthogonal to the X direction
  • Y direction one direction orthogonal to the X direction
  • Z direction a direction orthogonal to the X direction and the Y direction. That is, the central axes of the inner tube 11 and the outer tube 12 are parallel to the X direction, and a cross-sectional shape thereof in a YZ plane is circular.
  • the inner tube 11 forms a flow passage through which raw material gas MG containing a film-forming raw material flows.
  • An end part of the inner tube 11 on an upstream side is open as an inlet 11A for the raw material gas MG.
  • An end part of the inner tube 11 on a downstream side is open as an outlet 11B for the raw material gas MG.
  • the outer tube 12 forms a flow passage through which plasma-generating gas PG flows between the outer tube 12 and the inner tube 11.
  • a supply passage 16 for supplying the plasma-generating gas PG to the flow passage in the outer tube 12 is formed at an end part of the outer tube 12 on the upstream side.
  • An inlet 12A for guiding the plasma-generating gas PG to the supply passage 16 is formed in the supply passage 16.
  • an end part of the outer tube 12 on the downstream side is open as an outlet 12B for a plasma P generated in the outer tube 12.
  • the end part (outlet 11B) of the inner tube 11 on the downstream side and the end part (outlet 12B) of the outer tube 12 on the downstream side are located at the same position in the X direction.
  • the outlet 11B and the outlet 12B form a discharge port OL of a double tube including the inner tube 11 and the outer tube 12.
  • the plasma P merges with the raw material gas MG.
  • a raw material gas supply unit (not shown) is connected to the inlet 11A of the inner tube 11.
  • the raw material gas MG is supplied from the raw material gas supply unit to the inside of the inner tube 11 via the inlet 11A at a constant flow rate.
  • the raw material gas MG containing tetraethoxysilane (TEOS) as a raw material is used.
  • Oxygen (Oz) gas as reaction gas, nitrogen (N 2 ) gas as carrier gas, and the like are mixed in the raw material gas MG.
  • the raw material, the reaction gas, and the carrier gas contained in the raw material gas MG are not limited to those described above.
  • the raw material is not limited to gas and may be solid.
  • the reaction gas and the carrier gas may be the same kind of gas (for example, oxygen gas).
  • the raw material gas MG may contain gas other than the reaction gas and the carrier gas.
  • flow rates of the raw material (TEOS), the reaction gas (oxygen gas), and the carrier gas (nitrogen gas) contained in the raw material gas MG supplied from the raw material gas supply unit to the inner tube 11 are set to 0.003 liters/minute, 0.5 liters/minute, and 1 liter/minute, respectively.
  • the raw material gas MG supplied from the raw material gas supply unit to the inlet 11A of the inner tube 11 is discharged to the outside from the outlet 11B.
  • a plasma-generating gas supply unit (not shown) is connected to the inlet 12A of the outer tube 12.
  • the plasma-generating gas PG is supplied from the plasma-generating gas supply unit to the inside of the outer tube 12 at a constant flow rate.
  • helium (He) gas is used as the plasma-generating gas PG.
  • the plasma P generated by the helium gas has a long life metastable species, so that a glow atmospheric pressure plasma that is stable at a relatively low temperature is obtained.
  • the plasma-generating gas PG is not limited to helium, and gas such as argon, neon, or hydrogen may be used alone or in combination.
  • a flow rate of the plasma-generating gas PG (helium gas) supplied from the plasma-generating gas supply unit to the outer tube 12 is set to 3 liters/minute.
  • the first electrode 13 and the second electrode 14 are formed in an annular shape around the outer tube 12.
  • cross-sectional shapes of the first electrode 13 and the second electrode 14 in the YZ plane are circular, respectively.
  • the first electrode 13 and the second electrode 14 are separated from each other in the X direction.
  • the second electrode 14 is disposed on the downstream side (side of discharge port OL) with respect to the first electrode 13.
  • the first electrode 13 and the second electrode 14 are formed of a conductive metal material such as copper, aluminum, brass, or stainless steel.
  • the first electrode 13 is grounded.
  • the first power supply 15 as a high voltage power supply is connected to the second electrode 14.
  • the first power supply 15 is a bipolar pulse power supply, and a pulsed voltage having a constant frequency is applied to the second electrode 14.
  • the frequency of the pulsed voltage generated by the first power supply 15 is set to 50 kHz.
  • a peak voltage of the pulsed voltage is set to 10 kV, and a pulse width is set to 2 microseconds.
  • the first power supply 15 is not limited to the bipolar pulse power supply, and may be an AC power supply that generates a voltage (AC voltage) having a continuous waveform such as a sine wave. Note that the bipolar pulse power supply is superior to the AC power supply in that the charging of the substrate 20 is suppressed.
  • discharge such as streamer discharge occurs under an atmospheric pressure in a region (discharge region) DA between the first electrode 13 and the second electrode 14 in the outer tube 12.
  • discharge region DA discharge region between the first electrode 13 and the second electrode 14 in the outer tube 12.
  • Each discharge is discharge in a form of lightning, which occurs in a local portion in a circumferential direction of the outer tube 12. This discharge acts on the plasma-generating gas PG flowing in the discharge region DA to generate the plasma P.
  • the plasma P is gas containing active species such as charged particles (ions, electrons, and the like) and radicals.
  • the plasma P generated in the discharge region DA flows to the downstream side and is discharged to the outside from the outlet 12B in a form of jet.
  • the plasma P discharged from the outlet 12B merges with the raw material gas MG discharged from the outlet 11B and is mixed.
  • the active species contained in the plasma P decompose the raw material gas MG.
  • a product (SiO 2 ) generated by promoting the chemical reaction represented by the following reaction formula is discharged toward the substrate 20.
  • the product is deposited on the surface of the substrate 20 to form an SiO 2 film F.
  • a molecular structure of the TEOS contains carbon, hydrogen, and the like, and a concentration of carbon, hydrogen, and the like contained in SiO 2 film F affects the film quality.
  • the decomposition of the raw material gas MG by the plasma P is insufficient, the purity of the SiO 2 film F is lowered. The higher the purity of the SiO 2 film F, the better the quality of the SiO 2 film F.
  • the substrate 20 is a flat plate-shaped insulating substrate, and one surface thereof faces the discharge port OL of the double tube.
  • the surface of the substrate 20 facing the discharge port OL is parallel to a YZ plane.
  • the third electrode 21 is formed on a surface (back surface) of the substrate 20 opposite to the surface facing the discharge port OL.
  • the second power supply 22 is connected to the third electrode 21.
  • the distance between the substrate 20 and the discharge port OL is set to 10 mm.
  • the substrate 20 is preferably an insulator in order to prevent the above-described abnormal discharge.
  • the substrate 20 is an acrylic plate.
  • the third electrode 21 substantially covers the back surface of the substrate 20.
  • the third electrode 21 is a conductive metal such as copper.
  • the second power supply 22 applies a negative voltage in order to allow the active species (mainly positive ions) contained in the plasma P to reach the surface of the substrate 20 and to promote the reaction in the vicinity of the surface of the substrate 20.
  • This negative voltage is a direct current or a direct current pulse.
  • the surface of the substrate 20 is polarized by receiving a voltage applied from the second power supply 22 to the third electrode 21, and a surface potential is generated.
  • the active species contained in the plasma P discharged from the discharge port OL receives electric energy to increase the density.
  • the third electrode 21 may be grounded.
  • the thickness of the substrate 20 is set to 10 mm.
  • Fig. 3 defines the size of each part of the double tube formed of the inner tube 11 and the outer tube 12.
  • the diameter (outer diameter) of the outer tube 12 is D1
  • the diameter (outer diameter) of the inner tube 11 is D2.
  • the length of the second electrode 14 in the axial direction (X direction) is L1
  • the length of the first electrode 13 in the axial direction is L2
  • the distance between the first electrode 13 and the second electrode 14 in the axial direction is L3.
  • the distance from an end part of the second electrode 14 to the outlet 12B of the outer tube 12 is L4.
  • the wall thicknesses of the inner tube 11 and the outer tube 12 are each set to, for example, 1 mm.
  • the inner diameter (diameter) of the inner tube 11 and the outer tube 12 is substantially the same as the outer diameter (diameter) D1 of the outer tube 12.
  • the second electrode 14 as the high voltage application electrode is disposed on the downstream side with respect to the first electrode 13 as the ground electrode.
  • the active species (mainly positive ions) contained in the plasma P generated in the discharge region DA is trapped in the outer tube 12 in a case where the plasma P flows toward the outlet 12B. Since ions, which are charged particles, have higher energy than radicals and have an effect of promoting the decomposition of the raw material gas and generating a high-quality film, the amount of decomposition of the raw material gas decreases by trapping the ions in the ground electrode, and the purity of the SiO 2 film F is lowered. As a result, the quality of the film F to be formed is deteriorated.
  • the plasma P generated in the discharge region DA does not pass through a region where the first electrode 13 as the ground electrode is disposed in a case of flowing toward the outlet 12B.
  • the active species (mainly positive ions) contained in the plasma P is not trapped in the outer tube 12 in a case of flowing toward the outlet 12B, and is discharged to the outside from the outlet 12B.
  • the second electrode 14 is disposed on the downstream side with respect to the first electrode 13, whereby the active species contained in the plasma P generated in the discharge region DA continues to receive electric energy by the electric field generated by the second electrode 14 in a case of flowing toward the outlet 12B.
  • the distribution of the plasma P spreads in a radial direction of the outer tube 12 (the center direction of the outer tube 12) as it flows downstream.
  • the plasma P locally generated in the discharge region DA receives electric energy in a case of flowing toward the outlet 12B, and the distribution of the plasma P spreads in the circumferential direction.
  • the length L1 of the second electrode 14 in the axial direction and the diameter D1 of the outer tube 12 are set so as to satisfy a relationship of L1 ⁇ D1.
  • the time for receiving electric energy from the second electrode 14 during the flow of the plasma P in the downstream direction becomes longer, and the distribution sufficiently spreads in the radial direction and the circumferential direction.
  • the reduction of the active species contained in the plasma P is suppressed and the distribution is made uniform, so that the amount of decomposition of the raw material gas MG and the processing unevenness are improved, and the quality of the film F to be formed on the substrate 20 is improved.
  • the end part (outlet 11B) of the inner tube 11 on the downstream side and the end part (outlet 12B) of the outer tube 12 on the downstream side are located at the same position in the axial direction.
  • the plasma P and the raw material gas MG merge with each other immediately after being discharged from the discharge port OL, and the raw material gas MG is decomposed, so that the distance between the discharge port OL and the substrate 20 can be shortened, and the quality of the film F is improved.
  • the frequency of the voltage applied by the first power supply 15 to the second electrode 14 is set to 50 kHz.
  • the frequency of the voltage applied to the second electrode 14 is extremely high, the charged particles contained in the plasma P are trapped in the space inside the outer tube 12 due to the reversal of the electric field, and the active species discharged from the outlet 12B is reduced.
  • the voltage applied to the second electrode 14 by the first power supply 15 is set to an AC voltage or a pulsed voltage having a frequency of 500 kHz or less, the number of the charged particles trapped in the space inside the outer tube 12 is reduced, and the active species discharged from the outlet 12B can be increased. As a result, the quality of the film F is improved.
  • a film forming device 10A according to the second embodiment has an inner tube 11, an outer tube 12, a first electrode 13, a second electrode 14, and a first power supply 15, similarly to the film forming device 10 according to the first embodiment.
  • the film forming device 10A is different from the film forming device 10 of the first embodiment only in that an end part (outlet 11B) of the inner tube 11 on the downstream side protrudes from an end part (outlet 12B) of the outer tube 12 on the downstream side in the axial direction.
  • the protrusion amount of the end part of the inner tube 11 on the downstream side with respect to the end part of the outer tube 12 on the downstream side is defined as ⁇ .
  • the protrusion amount ⁇ is set to 7 mm.
  • the film forming device 10A of the present embodiment is suitable for forming a film on a substrate 20A having a concave surface.
  • the film forming device 10 of the first embodiment there is a possibility that the outer tube 12 is brought into contact with a surface of the substrate 20A in a case where the discharge port OL approaches the substrate 20A.
  • the film forming device 10A of the present embodiment since the inner tube 11 protrudes at the discharge port OL, the film can be formed without bringing the outer tube 12 into contact with the surface of the substrate 20A.
  • the inner tube 11 protrudes as in the present embodiment, whereby the plasma P does not merge with the raw material gas MG immediately after being discharged from the outlet 12B.
  • a portion where the raw material gas MG is decomposed by the plasma P and the reaction is promoted is generated immediately after the gas is discharged from the outlet 11B, and there is no significant difference from the portion where the reaction is promoted in the configuration of the first embodiment. Therefore, a film F having the same quality as that of the first embodiment can be obtained.
  • the film forming device 10A of the present embodiment is not limited to the substrate 20A having a concave surface, and is also suitable for forming a film on a substrate having another surface shape.
  • the film forming device 10A of the present embodiment is also suitably used for, for example, a substrate having a convex surface.
  • the substrate as the object for film formation is fixed, but the film may be formed while the substrate is moved by a transport mechanism.
  • Fig. 8 shows an example in which a transport mechanism 30 that transports the substrate 20 is applied to the film forming device 10 of the first embodiment.
  • the transport mechanism 30 is a transport unit that moves the substrate 20 in parallel to the YZ plane in a one-dimensional or two-dimensional manner.
  • a belt conveyor, a biaxial plane moving stage, or the like can be used as the transport mechanism 30, a belt conveyor, a biaxial plane moving stage, or the like can be used.
  • the transport mechanism 30 can also be applied to the film forming device 10A of the second embodiment.
  • the transport unit may not move the substrate as the object for film formation, but may move the double tube formed of the inner tube 11 and the outer tube 12. That is, the transport unit need only move the substrate with respect to the discharge port of the double tube.
  • the cross-sectional shapes of the inner tube 11 and the outer tube 12 and the cross-sectional shapes of the first electrode 13 and the second electrode 14 are circular, respectively, but the cross-sectional shapes are not limited to circular shapes, and may be an elliptical shape, an oval shape, an egg shape, or the like.
  • the diameter need only be defined by, for example, "circle-equivalent diameter".
  • the circle-equivalent diameter is the diameter of a circle having the same area. Therefore, the terms "tube” and "annular" in the present disclosure do not limit the cross-sectional shape to a circular shape.
  • the SiO 2 film F was formed on the substrate by using gas containing TEOS (raw material), O 2 (reaction gas), and N 2 (carrier gas) as the raw material gas MG and using helium gas as the plasma-generating gas PG.
  • the carbon concentration and the film thickness were measured as evaluation values of the quality of the SiO 2 film F to be formed on the substrate.
  • an infrared spectrophotometer was used for measurement of the carbon concentration.
  • a reflection spectroscopic film thickness meter was used for measurement of the film thickness.
  • the luminescence intensity ratio of helium to oxygen and the reach distance of the plasma P in the substrate direction (X direction) from the discharge port OL were measured.
  • the luminescence intensity ratio was measured by analyzing the emission spectrum of the plasma P by a spectroscope. Specifically, the ratio of the luminescence intensity of helium to the luminescence intensity of oxygen was obtained, and the result was expressed by a value in 5 stages of 1 to 5. "5" indicates that the ratio of the luminescence intensity of helium to the luminescence intensity of oxygen is the largest. On the other hand, "1" indicates that the ratio of the luminescence intensity of helium to the luminescence intensity of oxygen is the smallest. The higher the luminescence intensity of helium, the more the decomposition of the raw material gas MG is promoted, and the purity of the SiO 2 film F is improved, thereby improving the quality of the SiO 2 film F.
  • the reach distance of the plasma P could be obtained by observing the emission of the plasma P on the surface of the substrate while changing the distance of the substrate with respect to the discharge port OL, and specifying the limit distance at which the emission is observed on the surface of the substrate.
  • the longer the reach distance of the plasma P the more the decomposition and the chemical reaction of the raw material gas MG are promoted in the vicinity of the surface of the substrate, thereby improving the film quality.
  • a current flowing in the second electrode 14 as the high voltage application electrode during film formation was measured.
  • the current was measured, for example, by connecting an ammeter to a conductive wire connected between the second electrode 14 and the first power supply 15. Basically, although the current value increases as the area of the second electrode 14 increases, the increase in current value is suppressed in a case where the area of the second electrode 14 exceeds a certain value due to the limitation of the power supply capacity of the first power supply 15.
  • the temperature of the second electrode 14 was measured during film formation. The temperature was measured, for example, by attaching a thermo-label (registered trademark) to the second electrode 14. The temperature of the second electrode 14 rises as the current value of the second electrode 14 increases and the density of the charge discharged from the second electrode 14 increases. This is because the density of the plasma P generated in the vicinity of the second electrode 14 increases as the density of the charge discharged from the second electrode 14 increases, and the temperature of the second electrode 14 rises due to heat transfer from the plasma P.
  • a thermo-label registered trademark
  • Fig. 9 shows experimental results regarding the L1/D1 dependence of the quality of the SiO 2 film F.
  • L1/D1 is a value obtained by dividing the length L1 of the second electrode 14 by the diameter D1 of the outer tube 12.
  • the film formation was carried out based on the standard film forming condition (No. 1) as a standard and the other six film forming conditions (Nos. 2 to 7) in which the length L1 of the second electrode 14 was changed with respect to the standard film forming condition (No. 1).
  • the substrate was grounded and the protrusion amount ⁇ of the end part of the inner tube 11 was set to "0".
  • Figs. 10A to 10C are graphs showing the L1/D1 dependence of the carbon concentration of the SiO 2 film F, the current flowing in the second electrode 14, and the temperature of the second electrode 14, which were created based on the experimental results shown in Fig. 9 .
  • Fig. 10A shows the L1/D1 dependence of the carbon concentration.
  • Fig. 10B shows the L1/D1 dependence of the current.
  • Fig. 10C shows the L1/D1 dependence of the temperature.
  • the length L1 of the second electrode 14 is made shorter than the standard film forming condition, the area of the second electrode 14 decreases, so that the current value of the second electrode 14 decreases as shown in Fig. 10B , and the density of the charge discharged from the second electrode 14 decreases. Due to the decrease in density of the charge, the density of the plasma P decreases and the amount of decomposition of the raw material gas MG decreases. As a result, carbon remains in the SiO 2 film F and the film quality is deteriorated.
  • the length L1 of the second electrode 14 is made longer than the standard film forming condition, the area of the second electrode 14 increases, but as shown in Fig. 10B , the current value is saturated due to the limitation of the power supply capacity of the first power supply 15. After the current value is saturated, in a case where the length L1 of the second electrode 14 is lengthened to increase the area thereof, on the contrary, the density of the charge discharged from the second electrode 14 decreases.
  • the decrease in density of the charge corresponds to the decrease in temperature of the second electrode 14, as shown in Fig. 10C .
  • the density of the plasma P decreases and the amount of decomposition of the raw material gas MG decreases. As a result, the film quality is similarly deteriorated.
  • Fig. 11 shows experimental results regarding the L1/D1 dependence of the quality of the SiO 2 film F.
  • the film formation was carried out based on the standard film forming condition (No. 1) as a standard and the other four film forming conditions (Nos. 2 to 5) in which the diameter D1 of the outer tube 12 was changed with respect to the standard film forming condition (No. 1).
  • the film forming condition (No. 5) the diameter D1 of the outer tube 12 and the length L1 of the second electrode 14 were changed.
  • the diameter D1 of the outer tube 12 is made shorter than the standard film forming condition, the area of the second electrode 14 decreases, so that the amount of the charge discharged from the second electrode 14 decreases (the current value decreases).
  • the density of the plasma P decreases, the amount of decomposition of the raw material gas MG decreases, and the film quality is deteriorated.
  • the diameter D1 of the outer tube 12 is made longer than the standard film forming condition, so that the inner volume between the inner tube 11 and the outer tube 12 increases, so that the density of the plasma P decreases. As a result, the amount of decomposition of the raw material gas MG decreases, and carbon remains in the SiO 2 film F, so that the film quality is deteriorated.
  • One of the reasons for the deterioration in film quality is that the area of the second electrode 14 increases by increasing the diameter D1 of the outer tube 12, and the current value is saturated due to the limitation of the power supply capacity of the first power supply 15.
  • the inner volume of the outer tube 12 increases and the density of the charge discharged from the second electrode 14 decreases (the current value decreases). As a result, the density of the plasma P further decreases, and the film quality is deteriorated.
  • Fig. 13 shows experimental results regarding the D2/D1 dependence of the quality of the SiO 2 film F.
  • D2/D1 is a value obtained by dividing the diameter D2 of the inner tube 11 by the diameter D1 of the outer tube 12.
  • the film formation was carried out based on the standard film forming condition (No. 1) as a standard and the other three film forming conditions (Nos. 2 to 4) in which the diameter D2 of the inner tube 11 was changed with respect to the standard film forming condition (No. 1).
  • the cross-sectional area of the plasma P at the discharge port OL increases, and the density of the plasma P decreases.
  • the plasma P discharged from the discharge port OL collides with the atmosphere and is deactivated, so that the reach distance is shortened, the decomposition and the chemical reaction of the raw material gas MG in the vicinity of the surface of the substrate are lowered, thereby deteriorating the film quality.
  • the inner volume between the inner tube 11 and the outer tube 12 decreases, so that the density of the plasma P increases and the cross-sectional area decreases.
  • the cross-sectional area of the plasma P decreases small in this way, the plasma P discharged from the discharge port OL collides with the atmosphere and is deactivated, so that the reach distance is shortened and the film quality is deteriorated.
  • Fig. 14 shows experimental results regarding the ⁇ dependence of the quality of the SiO 2 film F.
  • ⁇ is the protrusion amount of the end part of the inner tube 11 shown in Fig. 6 .
  • the protrusion amount ⁇ at the end part of the inner tube 11 is 0 or more.
  • Fig. 15 shows experimental results regarding the substrate bias dependence of the quality of the SiO 2 film F.
  • GND indicates that the substrate was grounded.
  • the film formation was carried out based on the standard film forming condition (No. 1) in a case where the substrate was grounded, the film forming condition (No. 2) in a case where a DC voltage of -1000 V was applied to the substrate, and the film forming condition (No. 3) in a case where a DC voltage of +1000 V was applied to the substrate.
  • the carbon concentration in the SiO 2 film F was lower than that in a case where the substrate was grounded, and the film quality equal to or higher than that in a case where the substrate was grounded was obtained. This is because the active species contained in the plasma P discharged from the discharge port OL receives electric energy to increase the density, and the decomposition and the chemical reaction of the raw material gas MG are promoted in the vicinity of the surface of the substrate.
  • the carbon concentration in the SiO 2 film F was higher than that in a case where the substrate was grounded and the film quality was extremely lowered. This is because the reach of the active species (mainly positive ions) contained in the plasma P to the substrate is hindered by a positive voltage.

Claims (9)

  1. Filmbildungsvorrichtung (10, 10A), die zur Abscheidung eines Produkts, das durch Zersetzen von Rohmaterialgas durch ein Plasma, das aus einer Austrittsöffnung eines Doppelrohrs austritt, erzeugt wird, auf einem Substrat (20) geeignet ist, wobei die Vorrichtung (10) umfasst:
    ein inneres Rohr (11), durch das ein Rohmaterialgas enthaltend ein filmbildendes Rohmaterial strömt und zu der Austrittsöffnung auf einer stromabwärtigen Seite geführt wird;
    ein äußeres Rohr (12), in das das innere Rohr (11) eingesetzt ist und durch die plasmabildendes Gas strömt und ein durch eine elektrische Entladung erzeugtes Plasma zur Austrittsöffnung auf der stromabwärtigen Seite geleitet wird;
    eine erste Elektrode (13), die ringförmig um das äußere Rohr (12) ausgebildet und geerdet ist; und
    eine zweite Elektrode (14), die ringförmig um das äußere Rohr (12) herum ausgebildet ist und die mit einer ersten Stromversorgung (15) verbunden ist, die geeignet ist, Hochspannungsenergie an die zweite Elektrode (14) anzulegen,
    wobei die zweite Elektrode (14) auf der stromabwärtigen Seite in Bezug auf die erste Elektrode (13) angeordnet ist, und unter der Annahme, dass eine Länge der zweiten Elektrode (14) in einer axialen Richtung L1 und ein Durchmesser des äußeren Rohrs (12) D1 ist,
    wobei eine Beziehung von 1 ≤ L1/D1 ≤ 10 erfüllt ist.
  2. Filmbildungsvorrichtung (10, 10A) nach Anspruch 1,
    wobei unter der Annahme, dass ein Durchmesser des inneren Rohrs (11) D2 ist, eine Beziehung von D2/D1 ≤ 0,7 erfüllt ist.
  3. Filmbildungsvorrichtung (10, 10A) nach Anspruch 1 oder 2,
    wobei an der Austrittsöffnung ein Vorsprungsbetrag eines Endteils des inneren Rohrs (11) auf der stromabwärtigen Seite in der axialen Richtung in Bezug auf einen Endteil des äußeren Rohrs (12) auf der stromabwärtigen Seite 0 oder mehr ist.
  4. Filmbildungsvorrichtung (10, 10A) nach einem der Ansprüche 1 bis 3,
    wobei das Substrat ein Isolator ist und eine dritte Elektrode auf einer Oberfläche des Substrats gegenüber einer der Austrittsöffnung zugewandten Oberfläche ausgebildet ist.
  5. Filmbildungsvorrichtung (10, 10A) nach Anspruch 4,
    wobei die dritte Elektrode geerdet ist.
  6. Filmbildungsvorrichtung (10, 10A) nach Anspruch 4,
    wobei die Filmbildungsvorrichtung (10) zum Anlegen einer negativen Spannung an die dritte Elektrode geeignet ist.
  7. Filmbildungsvorrichtung (10, 10A) nach Anspruch 6,
    wobei die an die dritte Elektrode angelegte negative Spannung ein Gleichstrom oder ein Gleichstromimpuls ist.
  8. Filmbildungsvorrichtung (10, 10A) nach einem der Ansprüche 1 bis 7, ferner umfassend:
    eine Transporteinheit, die geeignet ist, das Substrat in Bezug auf die Austrittsöffnung relativ zu bewegen.
  9. Filmbildungsvorrichtung (10, 10A) nach einem der Ansprüche 1 bis 8,
    wobei die Filmbildungsvorrichtung geeignet ist, eine Wechselspannung oder eine gepulste Spannung mit einer Frequenz von 500 kHz oder weniger an die zweite Elektrode anzulegen.
EP20870690.3A 2019-09-30 2020-09-04 Filmformungsvorrichtung Active EP4039849B1 (de)

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JP2019178295 2019-09-30
PCT/JP2020/033691 WO2021065357A1 (ja) 2019-09-30 2020-09-04 成膜装置

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JP4164967B2 (ja) * 1999-04-23 2008-10-15 松下電工株式会社 プラズマ処理装置及びプラズマ処理方法
JP2004091837A (ja) 2002-08-30 2004-03-25 Konica Minolta Holdings Inc 製膜処理装置
JP2008098128A (ja) * 2006-10-11 2008-04-24 Kunihide Tachibana 大気圧プラズマ発生照射装置
CN102282916A (zh) * 2009-01-13 2011-12-14 里巴贝鲁株式会社 等离子体生成装置及方法
JP5635788B2 (ja) * 2010-03-25 2014-12-03 パナソニック株式会社 成膜装置
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US20220170158A1 (en) 2022-06-02
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JP7293379B2 (ja) 2023-06-19
WO2021065357A1 (ja) 2021-04-08

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