Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
  • H10K59/65—OLEDs integrated with inorganic image sensors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/17—Carrier injection layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/14—Carrier transporting layers
  • H10K50/15—Hole transporting layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
  • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays
  • H10K59/1201—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
  • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present description relates generally to optoelectronic devices and, more particularly, devices comprising a display screen and an image sensor.
• the fingerprint sensor is generally integrated into a home button located on the front of the device.
• the main drawback of such an architecture is that it limits the space available for other elements of the telephone. In particular, this has the effect of restricting the surface allocated, on the front face, to the display screen of the telephone. This generally results in an increase in the external dimensions of the apparatus, or a reduction in the area occupied by the display screen.
• One embodiment overcomes all or part of the drawbacks of electronic devices incorporating a known image sensor and a display screen.
• One embodiment provides for a pixel comprising: at least one organic electroluminescent component, comprising a first hole injection layer; and at least one organic photodetector, comprising a second hole injection layer, in which the first and second hole injection layers are made of the same material.
• the first hole injection layer is coated with a first active layer of the organic electroluminescent component; and the second hole injection layer coats a second active layer of the organic photodetector.
• the first active layer and the second hole injection layer are coated with the same electrode.
• the electrode constitutes an anode electrode of the organic photodetector and a cathode electrode of the organic electroluminescent component.
• the material of the first and second hole injection layers is a mixture of poly (3,4) -ethylenedioxythiophene and sodium polystyrene sulfonate, PEDOT: PSS.
• the first and second hole injection layers are electrically insulated from one another.
• the first and second hole injection layers are perpendicular to a direction of emission of light by the organic electroluminescent component and to a direction of reception of light by the organic photodetector.
• the organic electroluminescent component further comprises an anode electrode
• the organic photodetector further comprises a cathode electrode electrically isolated from the anode electrode of the organic light emitting component.
• One embodiment provides a method of manufacturing a pixel comprising: at least one organic electroluminescent component, comprising a first hole injection layer; and at least one organic photodetector, comprising a second hole injection layer, in which the first and second hole injection layers are made of the same material.
• the first hole injection layer and the second hole injection layer are produced during the same step. According to one embodiment, the first hole injection layer and the second hole injection layer are formed from the same third layer.
• One embodiment provides a method of manufacturing a pixel as described.
• One embodiment provides for an optoelectronic device comprising a matrix of pixels as described.
• the electrode is connected to all the organic electroluminescent components and to all the organic photodetectors of the same row of the matrix.
• the device comprises, above the organic photodetectors, one or more elements adapted to perform an angular selection of light rays reflected by a finger of a user, these elements taking the form of: a black layer having openings; lentils; or a black layer having apertures with respect to which lenses are centered.
• Figure 1 is an exploded perspective view, schematic and partial, of an embodiment of an optoelectronic device
• Figure 2 is a sectional view, schematic and partial, of a step of an embodiment of a method embodiment of the optoelectronic device of the figure
• Figure 3 is a sectional view, schematic and partial, of another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 4 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 5 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 6 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 7 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 8 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 9 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 10 is a sectional view, schematic and partial, of yet another step of the implementation mode of the method for producing the optoelectronic device of FIG. 1;
• Figure 11 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 12 is a sectional view, schematic and partial, of a step of a variant of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 13 is a sectional view, schematic and partial, of another step of the variant of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 14 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 15 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 16 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1;
• Figure 17 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device of Figure 1; and Figure 18 is a sectional view, schematic and partial, of another embodiment of an optoelectronic device.
• insulator and “conductor” respectively mean “electrically insulating” and “electrically conductive”.
• a pixel of an image corresponds to a unitary element of the image displayed by the display screen.
• the display screen is a color image display screen, it generally comprises, for the display of each pixel of the image, at least three emission and / or regulation components. light intensities that each emit light radiation in substantially a single color (eg, red, green, or blue). The superposition of the radiations emitted by these components provides the observer with the colored sensation corresponding to the pixel of the displayed image.
• the display screen is a monochrome image display screen, it generally comprises a single light source for displaying each pixel of the image.
• an optoelectronic component in particular of an electroluminescent component or of a photodetector, the region from which is emitted the majority of the electromagnetic radiation supplied by the optoelectronic component or the region from which the majority is captured. electromagnetic radiation received by the optoelectronic component.
• an optoelectronic component is said to be organic when the active region of the optoelectronic component is predominantly, preferably entirely, at least one organic material or a mixture of organic materials.
• Devices which integrate an optical sensor or an ultrasonic sensor behind a display screen with organic light-emitting diodes.
• a drawback of these devices lies in the fact that the integration of the sensor behind the screen causes an increase in the total thickness of the device or a decrease in thickness available for a battery fitted to this device. The larger the surface area of the sensor to be integrated, the lower the thickness available for the battery, and therefore its capacity, thus leading to a reduction in the autonomy of the device.
• One solution to overcome this drawback consists in integrating the sensor and the display screen on the same substrate, in other words in the same device.
• Figure 1 is an exploded perspective view, schematic and partial, of an embodiment of an optoelectronic device 1.
• the optoelectronic device 1 shown very schematically in FIG. 1, comprises an image sensor 3 and a display screen 5.
• the image sensor 3 comprises a matrix of organic photodetectors 30. These organic photodetectors 30 may correspond to organic photodiodes (OPD) or to organic photoresistors.
• the display screen 5 comprises a matrix of organic electroluminescent components 50. These organic electroluminescent components 50 are, for example, organic electroluminescent diodes (Organic Light). Emitting Diodes - OLED).
• the device 1 can thus be considered indifferently either as a display screen 5, in which an image sensor 3 is integrated, or as an image sensor 3, in which a display screen 5 is integrated.
• the optoelectronic device 1 consists of a matrix of pixels 10, each of these pixels 10 comprising, still according to this embodiment, a single organic photodetector 30 and a single organic electroluminescent component 50.
• pixels 10 of substantially square shape each pixel 10 comprising an organic photodetector 30 and an electroluminescent component 50 both of rectangular shape.
• the pixels 10, the organic photodetectors 30 and the electroluminescent components 50 may have shapes other than those illustrated in FIG. 1.
• the electroluminescent components 50 may in particular occupy a larger area than the photodetectors 30, as shown in FIG. 1, so as to promote emission of light by the display screen 5. All the pixels 10 of the optoelectronic device 1 preferably have substantially identical dimensions, except for manufacturing dispersions.
• electroluminescent components 50 and the photodetectors 30 of the optoelectronic device 1 are separated from each other, at least at the surface, by areas of insulating material. The purpose of these zones is in particular to allow individual addressing of the electroluminescent components 50 and of the photodetectors 30.
• first arrows 32 REEIVED LIGHT
• second arrows 52 EMITTED LIGHT
• the emission and the reception of light take place in opposite (or opposite) directions, respectively towards and from the top, in FIG. 1.
• This emission and this reception of light take place on the side. of the face where the photodetectors 30 and the electroluminescent components 50 are located, called the upper face of the optoelectronic device 1.
• the photodetectors 30 and the electroluminescent components 50 are coplanar.
• the photodetectors 30 and the electroluminescent components 50 are, in FIG. 1, arranged side by side in the same plane perpendicular to a direction of emission of light and of reception of light.
• the transmission and reception of light take place respectively to and from the outside of this telephone.
• the optoelectronic device 1 constitutes a main display screen located on the front face of the telephone, this optoelectronic device 1 is then oriented such that the emission of light takes place in the direction of the exterior of the telephone and that light reception is done from outside the phone.
• the emission and reception of light take place on the side opposite the photodetectors 30 and the light-emitting components 50, that is to say to and from a lower face of the device optoelectronic 1 (towards and from the bottom, in figure 1).
• the optoelectronic device 1 may, in practice, comprise many more pixels 10, for example several million, or even several tens of millions of pixels 10.
• the optoelectronic device 1 preferably has a resolution greater than or equal to 500. dpi (dots per inch or pixels per inch).
• the photodetectors 30 and the electroluminescent components 50 have, where appropriate, lateral dimensions of the order of 10 ⁇ m to 50 ⁇ m.
• FIGS. 2 to 17 illustrate successive steps of an embodiment of a method of making the optoelectronic device 1 of Figure 1.
• FIGS. 2 to 17 illustrates the production of a single pixel 10 of the optoelectronic device 1.
• those skilled in the art are able to extend this method to the production of an optoelectronic device similar to the device 1 and comprising a any number of pixels 10 from the indications below.
• FIG. 2 is a sectional view, schematic and partial, of a step of an embodiment of a method for producing the optoelectronic device 1 of FIG.
• this support comprising, from bottom to top in the figure
• a substrate 70 a stack 71 comprising a first coplanar zone 710 and a second zone 712 inside which are respectively formed thin film transistors (Thin-Film Transistors - TFT) not shown in FIG. 2; a first electrode 720, located directly above the first zone 710 of the stack 71 and a second electrode 722, located directly above the second zone 712 of the stack 71; and a first connection pad 730 located directly above the first zone 710 of the stack 71 and a second connection pad 732 located directly above the second zone 712 of the stack 71.
• Thin-Film Transistors - TFT thin film transistors
• the thin film transistors of the first zone 710 and of the second zone 712 of the stack 71 can, in practice, be produced using identical or different technologies.
• the thin-film transistors of the first zone 710, intended to address the pixels of the image sensor 3 are made from indium, gallium and zinc oxide (Indium Gallium Zinc Oxide - IGZO) or amorphous silicon (aSi); and the thin-film transistors of the second zone 712, intended to address the pixels of the display screen 5, are made of low-temperature polycrystalline silicon (low-temperature polycrystalline Silicon - LTPS).
• the first pad 730 and the second pad 732 are intended to polarize an upper electrode (not visible in FIG. 2) common to all the pixels of the image sensor 3 and of the display screen 5. According to one mode of embodiment not shown, the first pad 730 and the second pad 732 are placed at a single location, this location possibly being located outside the pixel array.
• the first and second electrodes 720, 722 partially cover an upper surface 700 of the support 7 (at the top, in FIG. 2).
• the upper face 700 is oriented towards the outside of this telephone, the emission and reception of light then taking place via this upper face 700.
• the first electrode 720 is connected, preferably connected, to a first thin film transistor (not shown) located in the first area 710 of the stack 71.
• the second electrode 722 is preferably connected connected, to a second thin-film transistor (not shown) located in the second zone 712 of the stack 71.
• Each electrode 720, 722 is also designated by the term “contact pick-up element”.
• the first electrode 720 is intended to form a cathode electrode 720 of the photodetector 30 while the second electrode 722 is intended to form an anode electrode 722 of the light emitting component 50.
• the support 7 is cleaned in order in particular to remove any impurities found on the upper surface 700, on the electrodes 720, 722 and on the pads 730, 732.
• This cleaning s' performs, for example, by plasma treatment. Cleaning thus makes it possible to obtain satisfactory cleanliness of the support 7, of the electrodes 720, 722 and of the pads 730, 732 before carrying out a series of successive deposits, detailed in relation to the figures below.
• the substrate 70 of the support 7 can be a rigid or flexible substrate.
• This substrate 70 can also be made of a single-layer or multi-layer structure, that is to say of a structure consisting of a vertical stack of at least two layers.
• this substrate 70 is, for example, made of silicon (doped or not), germanium (doped or not) or glass.
• the substrate 70 is a flexible film.
• This substrate 70 is then, for example, a film of PEN (polyethylene naphthalate), of PET (polyethylene terephthalate), of PI (polyimide), of TAC (cellulose triacetate), of COP (cycloolefin copolymer) or of PEEK. (polyetheretherketone).
• the thickness of the substrate 70 can be between 20 mpi and 2000 mpi.
• the substrate 70 may have a thickness of 10 ⁇ m to 300 ⁇ m, preferably between 75 ⁇ m and 250 ⁇ m, in particular of the order of 150 ⁇ m, and exhibit flexible behavior. , that is to say that the substrate 70 can, under the action of an external force, be deformed, in particular bend, without breaking or tearing.
• the substrate 70 may comprise a multilayer structure made up of several films, for example a PET film with a thickness of about 100 ⁇ m laminated, with the aid of an adhesive, on a polyimide film with a thickness of. about 20 pm.
• the substrate 70 can comprise at least one layer substantially impermeable to oxygen and to humidity, in order to protect the organic layers of the device 1. It can be one or more layers deposited by a process. depositing thin layers (Atomic Layer Deposition - ALD), for example an Al2O3 layer.
• the protective deposition of the organic layers of the device 1 can also be carried out by physical vapor deposition (Physical Vapor
• Deposition - PVD or by plasma-enhanced chemical vapor deposition (PECVD), in particular in the case of a deposition of silicon nitride (SiN) or silicon oxide (S1O2) .
• the deposit for protecting the organic layers of the device 1 consists of a multilayer structure comprising an alternation of one or more inorganic layers and one or more organic layers.
• the inorganic layers are based on SiN and / or SiC> 2, these inorganic layers preferably being deposited by PECVD; and the organic layers are based on a material dielectric, these organic layers preferably being deposited by ink jet.
• the materials constituting the electrodes 720, 722 and the connection pads 730, 732 are chosen from the group comprising: a metal or a metal alloy, for example silver (Ag), aluminum (Al), lead (Pb), palladium (Pd), gold (Au), copper (Cu), nickel (Ni), tungsten (W), molybdenum (Mo ), titanium (Ti), chromium (Cr), titanium nitride (TiN) or an alloy of magnesium and silver (MgAg); a transparent conductive oxide (Transparent Conductive Oxide - TCO), in particular indium oxide doped with tin (Indium Tin Oxide - ITO), an oxide of zinc and aluminum (Aluminum Zinc Oxide - AZO), a gallium zinc oxide (Gallium Zinc Oxide - GZO), an ITO / Ag / ITO multilayer structure, an ITO / Mo / ITO multilayer structure, an AZO / Ag / AZO
• the method of implementing the method described in relation to FIGS. 3 to 17 consists exclusively in carrying out operations above the upper surface 700 of the support 7.
• the support 7 of FIGS. 3 to 17 is therefore preferably identical to the support 7 as explained in relation to FIG. 2 throughout the process. To simplify, the support 7 will therefore not be detailed again in the figures below.
• Figure 3 is a sectional view, schematic and partial, of another step of the embodiment of the method of making the optoelectronic device 1 of the Figure 1, from the structure as described in relation to Figure 2.
• This first layer 740 is preferably obtained by depositing a material which is binding selectively (or preferentially) at the surface of the electrodes 720, 722 and of the connection pads 730, 732, thus constituting a self-assembled monolayer (SAM).
• SAM self-assembled monolayer
• first part 7400 of the first layer 740 covering the first electrode 720; a second part 7402 of the first layer 740, covering the second electrode 722; a third part 7404 of the first layer 740, covering the first connection pad 730; and a fourth part 7406 of the first layer 740, covering the second connection pad 732.
• the 7400, 7402, 7404 and 7406 of the first layer 740 can correspond to a so-called additive process, for example by direct printing of a fluid or viscous composition comprising the material composing the parts 7400, 7402, 7404 and 7406 of the first layer 740 at the desired locations, for example by inkjet printing, heliography, screen printing, flexography, or nano-printing (nano-imprint).
• the 7400, 7402, 7404 and 7406 of the first layer 740 can alternatively correspond to a so-called subtractive process, in which the material composing the parts 7400, 7402,
• full plate deposit a structure in which unused parts are then removed, for example by photolithography, laser ablation or by a lifting process (lift -off).
• the first layer 740 can be deposited by liquid. It may in particular be a process of the spin coating, spray coating, heliography, die coating, blade coating, flexography, etc. screen printing, or dipping (dip-coating). Alternatively, the first layer 740 can be deposited by sputtering or by evaporation. Depending on the deposition process implemented, a step of drying the deposited material (s) may be provided.
• the first layer 740 is intended to form an electron injection layer (Electron Injection Layer - EIL) of the future photodetector 30.
• This first layer 740 is preferably made of a material chosen from the group comprising : a polyethyleneimine (PEI) polymer, an ethoxylated and / or butoxylated polyethyleneimine (PEIE) polymer or a polyelectrolyte, for example poly [9,9- bis (3 '- (N, N-dimethylamino) propyl) -2,7-fluorene-alt-2,7- (9,9-dioctyfluorene)] (PFN), the first layer 740 having then a thickness between 1 nm and 20 nm; a metal oxide, in particular a zinc oxide (ZnO), a titanium oxide (TiO x) or a zirconium oxide (ZrO x) , the first layer 740 then having a thickness between 10 nm and 100
• the first layer 740 therefore its parts 7400, 7402,
• 7404 and 7406 can have a monolayer or multilayer structure.
• Figure 4 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 3.
• a non-selective deposition full plate deposition
• This second layer 742 thus covers free areas of the surface upper 700 of the support 7 as well as the first part 7400, the second part 7402, the third part 7404 and the fourth part 7406 of the first layer 740.
• the second layer 742 can be deposited by liquid. It could be in particular of a process of the spin coating, spray coating, heliography, die coating, blade coating, flexography, screen printing or dipping type. Alternatively, the second layer 742 can be deposited by sputtering or by evaporation. Depending on the deposition process implemented, a step of drying the deposited material (s) may be provided.
• the second layer 742 is intended to form an active layer of the future organic photodetector 30.
• This second layer 742 is preferably made of organic semiconductor (Organic Semiconductor - OSC).
• the second layer 742 can include small molecules, oligomers or polymers. They may be organic or inorganic materials, in particular materials comprising quantum dots.
• the second layer 742 may comprise an ambipolar (undoped) semiconductor material, or a mixture of an N-type semiconductor material and a P-type semiconductor material, for example in the form of superimposed layers or an intimate mixture. the nanometric scale so as to form a heterojunction in volume.
• the thickness of the second layer 742 may be between 50 nm and 2 ⁇ m, preferably between 200 nm and 700 nm, for example of the order of 300 nm.
• P-type semiconductor polymers suitable for making the second layer 742 are poly (3-hexylthiophene) (P3HT), poly [N-9'-heptadecanyl-
• PCDTBT 2,7-carbazole-alt-5,5- (4,7-di-2-thienyl-2 ', l', 3'-benzothiadiazole)]
• PCDTBT poly [(4,8-bis- ( 2- ethylhexyloxy) -benzo [1,2-b; 4,5-b '] dithiophene) -2,6-diyl- alt- (4- (2-ethylhexanoyl) -thieno [3,4-b] thiophene) ) -2,6-diyl]
• PBDTTT-C poly [2-methoxy-5- (2-ethyl-hexyloxy) -1,4-phenylene-vinylene]
• MEH-PPV poly [2, 6- (4,4-bis- (2- ethylhexyl) -4JJ-cyclopenta [2,1-b; 3,4-b '] dithiophene) -alt-
• PCPDTBT 4,7 (2,1,3-benzothiadiazole)]
• N-type semiconductor materials suitable for making the second layer 742 are fullerenes, in particular C60, [6,6] -phenyl-C 6i- methylbutanoate ([60] PCBM), methyl [6,6] -phenyl-C7i-butanoate ([70] PCBM), perylene diimide, zinc oxide (ZnO) or nanocrystals allowing the formation of quantum dots (quantum dots).
• the second layer 742 consists of a mixture of P3HT and PCBM.
• Figure 5 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 4.
• portions of the second layer 742 are eliminated so as to retain, as illustrated in FIG. 5, only a part 7420 of this second layer 742.
• the part 7420 of the second layer 742 covers in particular the first part 7400 of the first layer 740.
• This part 7420 of the second layer 742 corresponds to an active layer 7420 of the future organic photodetector 30.
• the active layer 7420 corresponds to a region from which most of the electromagnetic radiation received by organic photodetector 30 is captured.
• the part 7420 of the second layer 742 is obtained by etching, by implementing an etching mask, which can be formed by photolithography steps on a layer of positive photosensitive resin or negative deposited on the whole of the second layer 742, or by depositing blocks of resin directly at the desired locations on the second layer 742, for example by inkjet printing, heliography, screen printing, flexography, or nanoprinting.
• the etching can be reactive ion etching (RIE) or chemical etching.
• the part 7420 of the second layer 742 can alternatively be obtained by selective deposition, for example by inkjet printing or nanoimprint, without going through photolithography steps.
• the removal of the etching mask can be obtained by any stripping process, for example by soaking the structure comprising the etching mask in a chemical bath or by reactive ionic etching.
• Figure 6 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 5.
• a non-selective deposition full plate deposition
• This third layer 744 thus covers free areas of the surface upper 700 of the support 7 as well as the first connection pad 730, the second connection pad 732, the part 7420 of the second layer 742 and the second electrode 722.
• the third layer 744 can be deposited by liquid. It may in particular be a process of the spin coating, spray coating, heliography, die coating, blade coating, flexography, screen printing or dipping type. Alternatively, the third layer 744 can be deposited by sputtering or by evaporation. Depending on the deposition process implemented, a step of drying the deposited material (s) may be provided.
• the third layer 744 is intended to form a hole injection layer (HIL) of the future photodetector 30 and of the future organic electroluminescent component 50.
• This third layer 744 is preferably made of a material chosen from the group comprising: bis [(1-naphthyl) -N-phenyl] benzidine (NPB), the third layer 744 then having a thickness of between 10 nm and 100 nm; a mixture of poly (3,4) -ethylenedioxythiophene and sodium polystyrene sulfonate (PEDOT: PSS), the third layer 744 then having a thickness of between 20 nm and 200 nm; and a metal oxide, for example a molybdenum oxide (MO0 3) , a nickel oxide (NiO), a tungsten oxide (W0 3) or a vanadium oxide (V2O5), these metal oxides being able to form a single layer or indeed a two-layer or three-layer structure of
• Figure 7 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 6.
• third layer 744 portions of third layer 744 are eliminated (FIG. 6) so as to retain, as illustrated in FIG. 7, only a first part 7440 and a second part 7442 of this third layer 744.
• first part 7440 of the third layer 744 and the second part 7442 of the third layer 744 are made of the same material.
• the first part 7440 of the third layer 744 covers the part 7420 of the second layer 742 and the first connection pad 730.
• the second part 7442 of the third layer 744 covers the second electrode 722 but does not cover the second pad 732. This second part 7442 of third layer 744 is preferably not in contact with second pad 732.
• the first part 7440 of the third layer 744 corresponds to a hole injection layer 7440 of the future organic photodetector 30.
• the second part 7442 of the third layer 744 corresponds to a hole injection layer 7442 of the future organic electroluminescent component 50.
• the first part 7440 of the third layer 744 and the second part 7442 of the third layer 744 are electrically isolated from each other.
• the hole injection layers 7440 and 7442 are perpendicular to the direction of emission of light 52 (FIG. 1) by the organic electroluminescent component 50 and to the direction of reception of light 32 (FIG. 1) by the photodetector organic 30.
• the parts 7440 and 7442 of the third layer 744 are obtained by etching, by implementing an etching mask, which can be formed by steps of photolithography on a layer of photosensitive resin positive or negative deposited on the entire third layer 744, or by depositing resin blocks directly at the desired locations on the third layer 744, for example by inkjet printing, heliography, screen printing, flexography, or nanoprinting.
• the etching can be reactive ion etching or chemical etching.
• the removal of the etching mask can be obtained by any etching process, for example by soaking the structure comprising the etching mask in a chemical bath or by reactive ionic etching.
• FIG. 7 can alternatively be obtained by selective deposition of the hole injection layer, that is to say of the third layer 744, without going through photolithography steps.
• Figure 8 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 7.
• the future organic photodetector 30 is protected with a view to subsequent operations.
• This protection is here produced by a part 7460 of a fourth layer 746 of positive or negative photosensitive resin.
• This part 7460 covers in particular the first part 7440 of the third layer 744.
• the part 7460 of the fourth layer 746 is obtained by photolithography steps on this fourth layer 746, the layer 746 then being deposited over the entire structure on the side of the surface 700 of the support 7, or by depositing a block of resin directly on the first part 7440 of the third layer 744, for example by inkjet printing, heliography, screen printing, flexography, or nanoprinting.
• FIG. 9 is a sectional view, schematic and partial, of yet another step of the mode of implementation of the method for producing the optoelectronic device 1 of FIG. 1, from the structure as described in relation to FIG. 8.
• a part 7482 of a fifth layer 748 is formed.
• This part 7482 of the fifth layer 748 covers the upper face of the second part 7442 of the third layer 744 (FIG. 6).
• the part 7482 of the fifth layer 748 coats the second part 7442 of the third layer 744.
• the method of forming part 7482 of fifth layer 748 may correspond to a so-called additive process, for example by direct printing of a fluid or viscous composition comprising the material making up part 7482 of fifth layer 748 to l desired location, for example by inkjet printing, heliography, screen printing, flexography, spray coating, drop deposition, or nanoprinting.
• the method for forming part 7482 of fifth layer 748 can alternatively correspond to a so-called subtractive process, in which the material making up part 7482 of fifth layer 748 is deposited over the entire structure ("full plate ”), and in which unused parts are then removed, for example by photolithography.
• the fifth layer 748 can be deposited by liquid. It may in particular be a process of the spin coating, spray coating, heliography, die coating, blade coating, flexography, screen printing or dipping type. Alternatively, the fifth layer 748 can be deposited by sputtering or by evaporation. Depending on the deposition process implemented, a step of drying the deposited material (s) may be provided.
• the part 7482 of the fifth layer 748 forms an active layer 7482 of the future organic electroluminescent component 50. This active layer 7482 corresponds to a region from which the majority of the electromagnetic radiation supplied by the organic electroluminescent component 50 is emitted.
• the fifth layer 748 therefore the part 7482 of this fifth layer 748 is preferably made of a material chosen from the group comprising: for an organic electroluminescent component 50 emitting a light of green color, that is- i.e. whose wavelength is in a range of 510 nm to 570 nm, tris (8-hydroxyquinoline) aluminum (III) (Alq 3) and a mixture consisting of poly (9,9-dihexyl fluorenyl- 2,7-diyl) (PFO) and poly (2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene) (MEH-PPV), the part 7482 of the fifth layer 748 then having a thickness of between 20 nm and 120 nm; for an organic electroluminescent component 50 emitting a light of blue color, that is to say whose wavelength is within a range of 440 nm to 490 nm, 1,4-bis [2- (3- N-
• FIG. 10 is a sectional view, schematic and partial, of yet another step of the embodiment of the method for producing the optoelectronic device 1 of FIG. 1, from the structure as described in relation with figure 9.
• the part 7460 of the fourth layer 746 (which is therefore not visible in FIG. 10) is eliminated in order to expose the first part 7440 of the third layer 744 (FIG. 6).
• the elimination of this part 7460 of the fourth layer 746 can be carried out by any pickling process, for example by soaking the structure comprising the part 7460 of the fourth layer 746 in a chemical bath.
• FIG. 11 is a sectional view, schematic and partial, of yet another step of the mode of implementation of the method for producing the optoelectronic device 1 of FIG. 1, from the structure as described in relation with figure 10.
• a non-selective deposition full plate deposition
• This sixth layer 750 thus covers: free areas of the upper surface 700 of support 7; the first part 7440 of the third layer 744 (therefore the first connection pad 730); the part 7482 of the fifth layer 748 (therefore the second part 7442 of the third layer 744); and the second connection pad 732.
• the sixth layer 750 can be deposited by liquid. It may in particular be a process of the spin coating, spray coating, heliography, die coating, blade coating, flexography, screen printing or dipping type. Alternatively, the sixth layer 750 can be deposited by sputtering or by evaporation. Depending on the deposition process implemented, a step of drying the deposited material (s) may be provided.
• the sixth layer 750 is intended to form a common electrode 750 to the photodetector 30 and to the light emitting component 50.
• This common electrode 750 constitutes a cathode electrode of the organic light emitting component 50 and an anode electrode of the organic photodetector 30.
• L The common electrode 750 is located in a plane perpendicular to a direction of light emission (52, figure 1) by the light emitting component 50 and / or to a direction of light reception (32, figure 1) by the photodetector 30.
• the first electrode 720 constitutes a cathode electrode 720 of the organic photodetector 30.
• the second electrode 722 constitutes an anode electrode 722 of the organic electroluminescent component 50, distinct from the cathode electrode 720 of the photodetector 30.
• the anode electrode 722 of the organic light emitting component 50 is electrically isolated from the cathode electrode 720 of the organic photodetector 30.
• the organic electroluminescent component 50 has a direct structure, while the organic photodetector 30 has an inverse structure.
• the common electrode 750 is brought to a bias potential of the photodetector 30 and of the light-emitting component 50.
• This bias potential is, for example, applied to the first and second connection terminals 730, 732.
• the first connection terminal 730 being connected, preferably connected, to the second connection terminal 732, these terminals 730, 732 then constitute both anode terminals of the organic photodetector 30 and cathode terminals of the organic electroluminescent component 50.
• the common electrode formed by the sixth layer 750 is connected to all the light-emitting components 50 and to all the photodetectors 30 forming part of the same row or of the same column of the pixel matrix 10 of the optoelectronic device 1 of FIG. 1.
• the sixth layer 750 is at least partially transparent to the light radiation that it receives.
• the sixth layer 750 may be of a conductive and transparent material, for example of conductive and transparent oxide (Transparent Conductive Oxide - TCO), of carbon nanotubes, of graphene, of a conductive polymer, of a metal, or of a mixture or an alloy of at least two of these compounds.
• the sixth layer 750 can have a single-layer or a multi-layer structure.
• TCO suitable for the production of the sixth layer 750 are indium-tin oxide (Indium Tin Oxide - ITO), aluminum-zinc oxide (Aluminum Zinc Oxide - AZO), l '' gallium-zinc oxide (Gallium Zinc Oxide - GZO), zinc tin oxide (Zinc Tin Oxide - ZTO), fluorine doped tin oxide (Fluor Tin Oxide - FTO), titanium nitride (TiN), molybdenum oxide (M0O 3) , vanadium pentoxide (V2O5) and tungsten oxide (W0 3) .
• a conductive polymer suitable for making the sixth layer 750 is the polymer known under the name PEDOT: PSS, which is a mixture of poly (3,4) -ethylenedioxythiophene and sodium polystyrene sulfonate, and the polyaniline, also called PAni.
• Examples of metals suitable for producing the sixth layer 750 are silver, aluminum, gold, copper, nickel, titanium and chromium.
• the sixth layer 750 can be made of an alloy of magnesium and silver (MgAg).
• An example of a multilayer structure suitable for producing the sixth layer 750 is a multilayer structure of AZO and silver of the AZO / Ag / AZO type.
• the thickness of the sixth layer 750 can be between 10 nm and 5 ⁇ m, for example of the order of 60 nm. In the case where the sixth layer 750 is metallic, the thickness of this sixth layer 750 is less than or equal to 20 nm, preferably less than or equal to 10 nm.
• FIG. 12 is a sectional view, schematic and partial, of a step of a variant of the embodiment of the method for producing the optoelectronic device 1 of FIG. 1, from the structure such as described in relation to figure 9.
• part 7502 of the sixth layer 750 covers the part 7482 of the fifth layer 748 (therefore the second part 7442 of the third layer 744) and the second connection pad 732.
• the process for forming part 7502 of the sixth layer 750 may correspond to a so-called additive process, for example by direct printing of a fluid or viscous composition comprising the material making up part 7502 of the sixth layer 750 to l. desired location, for example by inkjet printing, heliography, screen printing, flexography, spray coating, drop deposition, or nanoprinting.
• the method of forming part 7502 of the sixth layer 750 can alternatively correspond to a so-called subtractive method, in which the sixth layer 750 is deposited over the entire structure (full plate deposition) in a manner analogous to the step set out in relation to FIG. 11, and in which unused parts are then removed, for example by photolithography.
• a resin similar to that composing the part 7460 of the fourth layer 746 (FIG. 7) is preferably used.
• the sixth layer 750 can be deposited by liquid. It may in particular be a process of the spin coating, spray coating, heliography, die coating, blade coating, flexography, screen printing or dipping type. Alternatively, the sixth layer 750 can be deposited by sputtering or by evaporation. Depending on the deposition process implemented, a step of drying the deposited material (s) may be provided.
• first and second connection pads 730, 732 are interconnected.
• the part 7502 of the sixth layer 750 and the first part 7440 of the third layer 744 thus form a common electrode to the photodetector 30 and organic electroluminescent component 50.
• the part 7502 of the sixth layer 750 is preferably made of a material similar to those exposed in relation to FIG. 11 for the sixth layer 750.
• FIG. 13 is a sectional view, schematic and partial, of another step of the variant of the embodiment of the method for producing the optoelectronic device 1 of FIG. 1, from the structure such as described in relation to figure 12.
• the part 7460 of the fourth layer 746 (which is therefore not visible in FIG. 13) is eliminated in order to expose the first part 7440 of the third layer 744.
• the elimination of this part 7460 of the fourth layer 746 can be carried out by any pickling process, for example by dipping the structure comprising the part 7460 of the fourth layer 746 in a chemical bath.
• the resin used for this photolithography operation is preferably removed by same time as part 7460 of the fourth layer 746.
• Figure 14 is a sectional view, schematic and partial, of yet another step of the implementation mode of the method for producing the optoelectronic device 1 of FIG. 1, from the structure as described in relation to FIG. 11.
• This seventh layer 752 thus completely covers the sixth layer 750 is carried out, that is to say the electrode common to the photodetector 30 and to the electroluminescent component 50, previously deposited during the step explained in relation to FIG. 11.
• the seventh layer 752 can be deposited by liquid. It may in particular be a process of the spin coating, spray coating, heliography, die coating, blade coating, flexography, screen printing or dipping type. Alternatively, the seventh layer 752 can be deposited by sputtering or by evaporation. Depending on the deposition process implemented, a step of drying the deposited material (s) may be provided.
• the seventh layer 752 is intended to form a buffer layer (or intermediate layer). This seventh layer 752 is transparent or partially transparent to visible light.
• the seventh layer 752 is preferably substantially air and water tight.
• this seventh layer 752 acts both: as a so-called “planarization” layer, that is to say as a layer making it possible to obtain a structure having a flat upper surface ; and as a barrier layer, that is to say as a layer to prevent degradation, due to exposure to water or moisture contained, for example, in the ambient air, organic materials constituting the photodetector 30 and the electroluminescent component 50.
• planearization that is to say as a layer making it possible to obtain a structure having a flat upper surface
• a barrier layer that is to say as a layer to prevent degradation, due to exposure to water or moisture contained, for example, in the ambient air, organic materials constituting the photodetector 30 and the electroluminescent component 50.
• the seventh layer 752 can be made of a dielectric material based on one or more polymers.
• the seventh layer 752 can in particular be made of a polymer known under the trade name “lisicon D320” from the company MERCK or of a polymer known under the trade name of “lisicon D350” from the company MERCK.
• the thickness of the seventh layer 752 is then between 0.2 ⁇ m and 5 ⁇ m.
• the seventh layer 752 can be made of fluoropolymer, in particular the fluoropolymer known under the trade name "Cytop” from the company Bellex, of polyvinylpyrrolidone (PVP), of polymethyl methacrylate (PMMA), of polystyrene (PS). , parylene, polyimide (PI), acrylonitrile butadiene styrene (ABS), polydimethylsiloxane (PDMS), a photolithography resin, epoxy resin, acrylate resin or a mixture of at least two of these compounds.
• PVP polyvinylpyrrolidone
• PMMA polymethyl methacrylate
• PS polystyrene
• parylene parylene
• PI polyimide
• ABS acrylonitrile butadiene styrene
• PDMS polydimethylsiloxane
• the material making up the seventh layer 752 can in particular be chosen from the group comprising a polyepoxide or a polyacrylate.
• the material making up the seventh layer 752 may be chosen from the group comprising bisphenol A epoxy resins, in particular bisphenol A diglycidyl ether (DGEBA) and bisphenol A and tetrabromobisphenol A diglycidyl ether, bisphenol epoxy resins F, epoxy novolac resins, including epoxy-phenol-novolac (EPN) and epoxy-cresol-novolak (ECN) resins, aliphatic epoxy resins, including epoxy resins with glycidil groups and cycloaliphatic epoxides, epoxy resins glycidylamine, in particular the glycidyl ethers of methylene dianiline (TGMDA), and a mixture of at least two of these compounds.
• bisphenol A epoxy resins in particular bisphenol A diglycidyl ether (DGEBA) and bisphenol A and
• the material composing the seventh layer 752 can be made from monomers comprising acrylic acid, methyl methacrylate, acrylonitrile, methacrylates, methyl acrylate, ethyl acrylate, 2- chloroethyl vinyl ether, 2-ethylhexyl acrylate, hydroxyethyl methacrylate, butyl acrylate, butyl methacrylate, trimethylolpropane triacrylate (TMPTA) and derivatives of these products.
• monomers comprising acrylic acid, methyl methacrylate, acrylonitrile, methacrylates, methyl acrylate, ethyl acrylate, 2- chloroethyl vinyl ether, 2-ethylhexyl acrylate, hydroxyethyl methacrylate, butyl acrylate, butyl methacrylate, trimethylolpropane triacrylate (TMPTA) and derivatives of these products.
• TMPTA trimethylolpropane triacrylate
• the seventh layer 752 may consist of a multilayer structure of silicon nitride (SiN) and silicon oxide (Si02).
• the seventh layer can be a monolayer of silicon nitride or silicon oxide deposited by PECVD or by PVD.
• Figure 15 is a sectional view, schematic and partial, of yet another step of the embodiment of the method of making the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 14.
• an eighth layer 754 on the side of the upper surface 700 of the support 7.
• This eighth layer 754 thus completely covers the seventh layer 752 previously. filed.
• the eighth layer 754 is intended to passivate the structure obtained in the previous step. In the remainder of the description, the eighth layer 754 is also called passivation layer 754.
• the eighth layer 754 may consist of alumina (Al 2 O 3 ), silicon nitride (S1 3 N 4 ) or silicon oxide (S1O2).
• the thickness of the passivation layer 754 is then between 1 nm and 300 nm.
• the eighth layer 754 can alternatively consist of a barrier substrate with a thickness which can reach 2 mm. According to one embodiment, this barrier substrate is then coupled to a getter material, also called a “getter” material, making it possible to absorb or trap residual gases in the structure.
• a getter material also called a “getter” material
• the eighth layer 754 can be deposited by a deposition process by thin atomic layers (Atomic Layer Deposition - ALD), by physical vapor deposition (Physical Vapor
• the eighth layer 754 receives an anti-reflective coating or treatment (not shown in FIG. 15).
• This anti-reflective coating allows in particular the organic photodetector 30 to capture more light.
• the anti-reflective coating also reduces polarization effects of the light picked up.
• Figure 16 is a sectional view, schematic and partial, of yet another step of the embodiment of the method for producing the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 15.
• first part 7560 and by a second part 7562 of a ninth layer 756 of positive or negative photosensitive resin are separated by a first opening 760.
• This first opening 760 passing through the ninth layer 756 is located directly above a third connection pad 734 formed in the support 7.
• the third connection pad 734 is, for example, a connection pad to a read circuit associated with the organic photodetector 30 or with a control circuit for the organic electroluminescent component 50.
• the parts 7560 and 7562 of the ninth layer 756 are obtained either by photolithography steps on this ninth layer 756, the layer 756 then being deposited on the entire structure on the side of the surface 700 of the support 7, or by depositing disjointed blocks of resin on the eighth layer 754, for example by inkjet printing, heliography, screen printing, flexography, or nanoprinting.
• Figure 17 is a sectional view, schematic and partial, of yet another step of the embodiment of the method for producing the optoelectronic device 1 of Figure 1, from the structure as described in relation with figure 16.
• the eighth layer 754 is etched to form a second opening 762 in line with the third connection pad 734.
• the second opening 762 is made in the extension of the first opening 760 (not shown in figure 17).
• the etching of the eighth layer 754 is preferably carried out by chemical etching.
• the seventh layer 752 and the sixth layer 750 are etched. As illustrated in FIG. 17, a third opening 764 is thus produced. This third opening 764 is formed in the extension of the second opening 762.
• the third connection pad 734 is thus exposed to expose its upper surface, that is to say the surface of the connection pad 734 located on the side of the upper surface 700 of the support 7, for subsequent connection operations (not detailed).
• the engraving of the seventh layer 752 and the sixth layer 750 is preferably carried out by plasma etching.
• FIG. 1 The method described above in relation to FIGS. 2 to 17 advantageously makes it possible to produce an optoelectronic device 1 (FIG. 1) comprising the display screen 5, consisting of a matrix of organic electroluminescent components 50, and of the image sensor 3, consisting of a matrix of organic photodetectors 30.
• this method makes it possible more particularly to produce an optoelectronic device comprising a screen of display incorporating a fingerprint sensor. This thus makes it possible to combine several functionalities, here the display of images and the acquisition of biometric data, in the same screen.
• An electronic device, for example a telephone, equipped with such a screen thus has improved ergonomics and smaller dimensions than that of a comparable telephone equipped with a traditional touch screen and a separate fingerprint reader.
• Figure 18 is a sectional view, schematic and partial, of another embodiment of an optoelectronic device 2.
• the device 2 comprises from bottom to top in FIG. 18: a lower encapsulation layer 200 constituted, for example, of polyethylene terephthalate (PET); a flexible substrate 202 made, for example, of polyamide; a buffer layer 204; a stack 206 in which thin film transistors T1 and T2 are formed; electrodes 208, 210, each electrode 208 being connected to one of the transistors T1 and each electrode 210 being connected to one of the transistors T2; light-emitting components 212, for example organic light-emitting diodes 212, also called OLED (Organic Light-Emitting Diode), each light-emitting component 212 being in contact with one of the electrodes 208, and photodetectors 214, for example organic photodiodes 214 , also called OPD (Organic Photodiode), each photodetector 214 being in contact with one of the electrodes 210, the organic light-emitting diodes 212 and the organic photodiodes
• the resolution of the optoelectronic device for the electroluminescent components 212 is of the order of 500 dpi and the resolution of the optoelectronic device for the photodetectors 214 is of the order of 500 dpi.
• the total thickness of the optoelectronic device 2 is less than 2 mm.
• each organic light-emitting diode 212 comprises an active region 230, the electrodes 208 and 218 being in contact with this active region 230.
• each organic photodiode 214 comprises from bottom to top in FIG. 18: a first interface layer 232 in contact with one of the electrodes 210; an active region 234 in contact with the first interface layer 232; and a second interface layer 236 in contact with the active region 234, the electrode 218 being in contact with the second interface layer 236.
• the stack 206 comprises: electrically conductive tracks 2060 resting on the barrier layer 204 and forming the gate conductors of transistors T1 and T2; a layer 2062 of a dielectric material covering the gate conductors 2060 and the barrier layer 204 between the gate conductors 2060 and forming the gate insulators of the transistors T1 and T2; active regions 2064 resting on the dielectric layer 2062 opposite the gate conductors 2060; electrically conductive tracks 2066 in contact with active regions 2064 and forming the drain and source contacts of transistors T1 and T2; and a layer 2068 of a dielectric material, or insulating layer 2068, covering the active regions 2064 and the electrically conductive tracks 2066, the electrodes 208 resting on the layer 2068 and being connected to some of the conductive tracks 2066 by conductive vias 240 passing through the insulating layer 2068 and the electrodes 210 resting on the layer 2068 and being connected to some of the conductive tracks 2066 by conductive vias 24
• the transistors T1 and T2 can be of the high gate type.
• the interface layer 232 or 236 may correspond to an electron injecting layer or to an injecting layer of holes.
• the output work of the interface layer 232 or 236 is suitable for blocking, collecting or injecting holes and / or electrons depending on whether this interface layer acts as a cathode or an anode. More precisely, when the interface layer 232 or 236 acts as an anode, it corresponds to an electron-blocking and hole-injecting layer.
• the output work of the interface layer 232 or 236 is then greater than or equal to 4.5 eV, preferably greater than or equal to 5 eV.
• the interface layer 232 or 236 acts as a cathode, it corresponds to an electron injecting and hole blocking layer.
• the output work of the interface layer 232 or 236 is then less than or equal to 4.5 eV, preferably less than or equal to 4.2 eV.
• the electrode 208 or 218 advantageously directly plays the role of an electron injecting layer or of an injecting layer of holes for the light-emitting diode 212 and it is not necessary to provide, in order to the light-emitting diode 212, of interface layer "sandwiching" the active region 230 and playing the role of an electron injecting layer or an injecting layer of holes.
• interface layers acting as an electron injecting layer or as a hole injecting layer can be provided between the active region 230 and the electrodes 208 and 218.
• the optoelectronic device 2 of FIG. 18 can advantageously be produced by adapting the method described in relation to FIGS. 2 to 17. This adaptation is within the reach of those skilled in the art based on the indications provided above.
• the optoelectronic device 2 comprises one or more elements (not shown) placed advantageously above the organic photodiodes 214 and making it possible to perform an angular selection of light rays reflected by a finger of a user.
• These elements can, for example, take the form of: a black layer having openings; lentils; or a black layer having apertures with respect to which lenses are centered.

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