Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/844—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
  • H10K39/30—Devices controlled by radiation
  • H10K39/32—Organic image sensors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/842—Containers
  • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays
  • H10K59/131—Interconnections, e.g. wiring lines or terminals
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/87—Passivation; Containers; Encapsulations
  • H10K59/871—Self-supporting sealing arrangements
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/87—Passivation; Containers; Encapsulations
  • H10K59/873—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

• the present description generally relates to optoelectronic devices and their manufacturing processes and, more particularly, to devices comprising a display screen and / or an image sensor.
• FIG. 1 partially and schematically represents an image sensor 10.
• the image sensor 10 comprises a matrix 11 of detection elements 12, called optical matrix thereafter.
• the detection elements 12 can be arranged in rows and columns.
• Each detection element 12 comprises a photodetector 14, for example a photodiode, and a selection element 16, for example a transistor whose source or drain is connected to a first electrode of the photodiode 14, for example the cathode.
• the image sensor 10 comprises a selection circuit 18 comprising, for each row, a conductive track 20 connected to the gates of the transistors 16 of selection.
• the image sensor 10 further comprises a read circuit 22 comprising, for each column, a conductive track 24 connected to the source or the drain of the column selection transistors 16.
• the second electrodes of the photodiodes 14, for example the anodes can be connected by conductive tracks 26 to a source 28 of a reference potential.
• the optical matrix 11 can then be made separately on a substrate and the selection circuit 18, the read circuit 22 and the potential source 28 can correspond to external circuits which are connected to the optical matrix 11.
• the optical matrix 11 comprises generally a stack of layers covered by a coating including protecting the organic photodiodes 14 against water and oxygen in the air.
• the coating may be a film which is attached to the optical matrix via an adhesive layer.
• a step of cutting the film is then provided after the fixing of the film on the optical matrix, in particular for exposing contact pads of the optical matrix 11 intended to be connected to the selection circuit 18, to the reading circuit 22 and to the source potential 28.
• the cutting step can be performed by means of a laser.
• a disadvantage of such a manufacturing method is that the adjustment of the laser is difficult so that the laser cutting step can result in undesirable deterioration of the conductive tracks 22, 24, 26 located at the passage of the laser beam.
• the substrate when the substrate is plastic, it may be absorbent at the wavelengths of the laser so that the laser cutting step may result in undesirable damage to the substrate at the passage of the laser beam.
• An object of an embodiment is to overcome all or part of the disadvantages of the optoelectronic devices described above and their manufacturing processes. Another object of an embodiment is that the method of manufacturing the optoelectronic device comprises a cutting step, in particular a laser cutting step.
• the optoelectronic device comprises conductive tracks that are not deteriorated.
• the optoelectronic device comprises a substrate that is not deteriorated.
• Another object of an embodiment is to provide an optoelectronic device comprising a display screen and / or an image sensor.
• the image sensor is, at least in part, made of organic semiconductor materials.
• Another object of an embodiment is that all or part of the optoelectronic device can be produced by successive layers of layers by printing techniques, for example by inkjet, by heliography, by screen printing, by flexography or by by coating.
• an embodiment provides an optoelectronic device comprising a substrate, a matrix of optoelectronic components covering the substrate, first conductive tracks connected to the optoelectronic components, an adhesive layer covering a part of the matrix and a coating in contact with the adhesive layer.
• the coating comprising a periphery
• the device further comprising a second reflective and / or radiation absorbing track at a wavelength of between 335 nm and 10.6 ⁇ m and extending in line with the periphery in accordance with a given direction, between the first conductive tracks and the coating.
• the second track is chosen from the group comprising:
• a metal or a metal alloy for example silver (Ag), gold (Au), lead (Pb), palladium (Pd), copper (Cu), nickel (Ni), tungsten (W), molybdenum (Mo), aluminum (Al), or chromium (Cr) or an alloy of magnesium and silver (MgAg);
• a colored or black resin for example a colored or black SU-8 resin
• the device comprises a first electrically insulating layer and, for each optoelectronic component, an electrode in contact with the optoelectronic component, resting on the first insulating layer and in contact with the first insulating layer, the second track resting on the first insulating layer and in contact with the first insulating layer.
• the second track is of the same material as the electrodes.
• the device comprises a second electrically insulating layer, and for each optoelectronic component, a field effect transistor and third conductive tracks connecting the transistor to the optoelectronic component, resting on the second insulating layer and in contact with the second insulating layer, the second track being of the same material as the third tracks, resting on the second insulating layer and in contact with the second insulating layer.
• the second track is interposed between the adhesive layer and the coating.
• the optoelectronic components comprise organic photodetectors.
• the optoelectronic components comprise organic electroluminescent components.
• One embodiment provides a method of manufacturing the optoelectronic device as defined above. According to one embodiment, the method comprises the following steps:
• the method further comprising forming the second reflective and / or absorbing the laser beam and extending in line with the periphery coating in said direction given between the first conductive tracks and the coating.
• FIG. 1, previously described, represents an electrical diagram of an exemplary image sensor
• Figures 2 and 3 are respectively a sectional view and a top view, partial and schematic, of an exemplary optical matrix of an image sensor
• FIGS. 4A to 4C are sectional, partial and schematic views of the structures obtained at successive stages of an embodiment of a method of manufacturing the optical matrix shown in FIGS. 2 and 3;
• Figures 5 and 6 are respectively a sectional view and a top view, partial and schematic, of an embodiment of an optical matrix
• Figures 7 to 9 are partial sectional and schematic views of embodiments of an optical matrix. detailed description
• An active region of an optoelectronic component is the region from which the majority of the electromagnetic radiation supplied by the optoelectronic component is emitted or the majority of the electromagnetic radiation received by the optoelectronic component is captured.
• an optoelectronic component is said organic when the active region of the optoelectronic component is predominantly, preferably completely, at least one organic material or a mixture of organic materials.
• a reflective element for radiation is called an element whose reflection factor for the radiation is greater than 80%, preferably greater than 90%, more preferably greater than 95%, the reflection factor being defined as the ratio between the flux of the reflected radiation and the flux of the incident radiation.
• FIG. 2 is a partial sectional schematic side view of an example of an optical matrix 30 whose equivalent electrical diagram can correspond to the optical matrix 11 represented in FIG.
• the optical matrix 30 comprises from bottom to top in FIG.
• FIG. 1 a stack 34 in which thin-film transistors are formed, a single transistor T being shown in FIG.
• each electrode 36 being connected to one of the transistors T, a single electrode 36 being shown in FIG. 2;
• photodetectors 38 for example organic photodiodes, also called OPD (English acronym for Organic Photodiode), a single photodiode 38 being shown in FIG. 2, each photodiode 38 being in contact with one of the electrodes 36;
• OPD Organic Photodiode
• each photodiode 38 comprises an active region 46, the electrodes 36 and 40 being in contact with the active region 46.
• each organic photodiode 38 may comprise a first interface layer in contact with the one of the electrodes 36, the active region 46 in contact with the first interface layer, and a second interface layer in contact with the active region 46, the electrode 40 being in contact with the second interface layer.
• the stack 34 comprises:
• a layer 52 of a dielectric material covering the tracks 50, 51 and the substrate 32 between the tracks 50, 51 and forming the gate insulators of the transistors T;
• electrically conductive tracks 56 extending over the dielectric layer 52, some of these tracks being in contact with the active regions 54 and forming the drain and source contacts of the transistors T, some of the tracks 56 being electrically connected to the tracks 51 by an electrically conductive vias intermediate 57 extending through the layer 52;
• the transistors T may be of the high gate type.
• this interface layer may correspond to an electron-injecting layer or to a hole-injecting layer.
• the output work of each interface layer is adapted to block, collect or inject holes and / or electrons depending on whether this interface layer plays the role of a cathode or anode. More precisely, when the interface layer plays the role of anode, it corresponds to an injector layer of holes and electron blocker.
• the output work of the interface layer is then greater than or equal to 4.5 eV, preferably greater than or equal to 5 eV.
• the interface layer acts as a cathode, it corresponds to an electron-injecting and hole-blocking layer.
• the output work of the interface layer is then less than or equal to 4.5 eV, preferably less than or equal to 4.2 eV.
• the electrode 36 or 40 advantageously directly acts as an electron-injecting layer or a hole-injecting layer for the photodiode 38 and it is not necessary to provide for the photodiode 38 , an interface layer in contact with the active region 46 and acting as an electron-injecting layer or a hole-injecting layer.
• the substrate 32 may be a rigid substrate or a flexible substrate.
• the substrate 32 may have a monolayer structure or correspond to a stack of at least two layers.
• An example of a rigid substrate comprises a substrate made of silicon, germanium or glass.
• the substrate 32 is a flexible film.
• An example of a flexible substrate comprises a film made of PEN (polyethylene naphthalate), PET (polyethylene terephthalate), PI (polyimide), TAC (cellulose triacetate), COP (cycloolefin copolymer) or PEEK (polyetheretherketone).
• the thickness of the substrate 32 may be between 5 ⁇ m and 1000 ⁇ m.
• the substrate 32 may have a thickness of 10 ⁇ m to 300 ⁇ m, preferably between 75 ⁇ m and 250 ⁇ m, in particular of the order of 125 ⁇ m, and have a flexible behavior, that is to say say that the substrate 32 may, under the action of an external force, deform, including bending, without breaking or tearing.
• the substrate 32 may comprise at least one substantially oxygen-tight and moisture-tight layer in order to protect the organic layers of the optical matrix 30. It may be a layer or layers deposited by a deposition process of thin layers (ALD, Atomic Layer Deposition), for example a layer of Al2O3.
• the material composing the electrodes 36, 40 is chosen from the group comprising:
• TCO transparent conductive oxide
• ITO indium tin-doped indium oxide
• AZO zinc oxide and aluminum oxide
• GZO gallium zinc oxide
• a metal or a metal alloy for example silver (Ag), gold (Au), lead (Pb), palladium (Pd), copper (Or), nickel (Ni), tungsten (W), molybdenum (Mo), aluminum (Al), or chromium (Cr) or an alloy of magnesium and silver (MgAg);
• the material composing the electrode 40 may also be chosen from the group comprising the PEDOT: PSS polymer, which is a mixture of poly (3,4) -ethylenedioxythiophene and sodium polystyrene sulphonate, or a polyaniline, the tungsten (WO3), nickel oxide (NiO), vanadium oxide (V2O5), or molybdenum oxide (M0O3).
• the electrode 40 is for example TCO.
• the electrodes 36 and the substrate 32 can then be opaque to the electromagnetic radiation captured by the photodiodes 38.
• the electrodes 36 and the substrate 32 are a material at least partly transparent to the radiation. electromagnetic captured by the photodiodes 38.
• the electrodes 36 are for example TCO.
• the electrode 40 can then be opaque to the electromagnetic radiation captured by the photodiodes 38.
• Each insulating layer 52, 58 may have a monolayer or multilayer structure and comprise at least one layer made of silicon nitride (SiN), silicon oxide (SiO 2) or a polymer, in particular a resin.
• the layer of adhesive material 42 is transparent or partially transparent to visible light.
• the layer of adhesive material 42 is preferably substantially airtight and watertight.
• the material composing the layer of adhesive material 42 is selected from the group consisting of a polyepoxide or a polyacrylate.
• the material constituting the adhesive material layer 42 may be chosen from the group comprising bisphenol A epoxy resins, in particular the diglycidyl ether of bisphenol A (DGEBA) and the diglycidyl ether of bisphenol A and tetrabromobisphenol A, the epoxy resins bisphenol F, epoxy novolac resins, especially epoxy-phenol-novolac resins (EPN) and epoxy-cresol novolac resins (ECN), aliphatic epoxy resins, in particular epoxy resins with glycidyl groups and cycloaliphatic epoxides, epoxy glycidylamine resins, including glycidyl ethers of methylene dianiline (TGMDA), and a mixture of at least two of these compounds.
• bisphenol A epoxy resins in particular the diglycidyl ether of bisphenol A (DGEBA) and the diglycidyl ether of bisphenol A and tetrabromobisphenol A
• the epoxy resins bisphenol F epoxy no
• the material constituting the layer of adhesive material 42 may be made from monomers including acrylic acid, methyl methacrylate, acrylonitrile, methacrylates, methyl acrylate, ethyl acrylate, 2-chloroethyl vinyl ether, 2-ethylhexyl acrylate, hydroxyethyl methacrylate, butyl acrylate, butyl methacrylate, trimethylolpropane triacrylate (TMPTA) and derivatives thereof.
• monomers including acrylic acid, methyl methacrylate, acrylonitrile, methacrylates, methyl acrylate, ethyl acrylate, 2-chloroethyl vinyl ether, 2-ethylhexyl acrylate, hydroxyethyl methacrylate, butyl acrylate, butyl methacrylate, trimethylolpropane triacrylate (TMPTA) and derivatives thereof.
• TMPTA trimethylolpropane triacrylate
• the thickness of the layer of adhesive material 42 is between 1 ⁇ m and 50 ⁇ m, preferably between 5 ⁇ m and 40 ⁇ m, in particular of the order of 15 ym.
• the coating 44 is a flexible film.
• An example of a flexible film comprises a film made of PEN (polyethylene naphthalate), PET (polyethylene terephthalate), PI (polyimide), TAC (cellulose triacetate), COP (cycloolefin copolymer) or PEEK (polyetheretherketone).
• the thickness of the coating 44 may be between 5 ⁇ m and 1000 ⁇ m.
• the substrate 32 may have a thickness of 10 ⁇ m to 300 ⁇ m, preferably between 25 ⁇ m and 100 ⁇ m, in particular of the order of 50 ⁇ m, and have a flexible behavior, that is to say to say that the coating may, under the action of an external force, deform, in particular to bend, without breaking or tearing.
• the coating 44 may comprise at least one substantially oxygen-tight layer and moisture to protect the organic layers of the optical matrix 30.
• the coating 44 may comprise at least one layer of SiN, for example deposited by chemical deposition plasma-assisted vapor phase (PECVD) and / or a layer of aluminum oxide (Al 2 O 3), for example deposited by ALD.
• PECVD chemical deposition plasma-assisted vapor phase
• Al 2 O 3 aluminum oxide
• the active region 46 comprises at least one organic material and may comprise a stack or a mixture of several organic materials. Active region 46 may comprise a mixture of an electron donor polymer and an electron acceptor molecule.
• the functional area of the active region 46 is delimited by the overlap between the lower electrode 36 and the upper electrode 40.
• the currents flowing through the functional zone of the active region 46 can vary from a few femtoamperes to a few microamperes.
• the thickness of the active region 46 covering the lower electrode 36 may be between 50 nm and 5 ⁇ m, preferably between 300 nm and 2 ⁇ m, for example of the order of 500 nm.
• Active region 46 may include small molecules, oligomers or polymers. It can be organic or inorganic materials.
• the active region 46 may comprise an ambipolar semiconductor material, or a mixture of an N-type semiconductor material and a P-type semiconductor material, for example in the form of superposed layers or of an intimate mixture at the nanoscale so to form a heterojunction by volume.
• P-type semiconductor polymers suitable for producing active region 42 are poly (3-hexylthiophene) (P3HT), poly [N-9'-heptadecanyl-2,7-carbazole-alt-5,5 (4, 7-di-2-thienyl-2 ', 1', 3'-benzothiadiazole)] (PCDTBT), Poly [(4,8-bis (2-ethylhexyloxy) -benzo [1,2- b, 4,5-b'-dithiophene) -2,6-diyl-alt- (4- (2-ethylhexanoyl) thi no [3,4-b] thiophene) -2,6-diyl]; 4, 5-b '] dithi-ophene) -2,6-diyl-alt- (5,5'-bis (2-thienyl) -4,4-dininyl-2,2'-bithiazole) -5' , 5 '''
• PBDTTT-C poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene]
• MEH-PPV poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene]
• PCPDTBT Poly [2,6- (4,4) bis (2-ethylhexyl) -4H-cyclopenta [2,1-b; 3,4-b '] dithiophene) -ait-4,7 (2,1,3-benzothiadiazole)]
• N-type semiconductor materials suitable for producing the active region 42 are fullerenes, especially C60, methyl [6, 6] -phenyl-C8 ] -butanoate ([60JPCBM), [6, 6], 6] -phenyl- ⁇ -butanoate methyl ([70JPCBM), perylene diimide, zinc oxide (ZnO) or nanocrystals allowing the formation of quantum dots, in English quantum dots.
• the material composing the interface layer is selected from the group consisting of:
• a metal oxide especially a titanium oxide or a zinc oxide
• a doped conductive or semiconductive polymer for example the PEDOT: Tosylate polymer which is a mixture of poly (3,4) -ethylenedioxythiophene and tosylate;
• carbonate for example CsCO3
• polyelectrolyte for example poly [9,9-bis (3 '- (N, N-dimethylamino) propyl) -2,7-fluorene-alt-2,7- (9,9-dioctylfluorene)] (PFN) poly [3- (6-trimethylammoniumhexyl) thiophene] (P3TMAHT) or poly [9,9-bis (2-ethylhexyl) fluorene] - b-poly [3- (6-trimethylammoniumhexyl) thiophene (PF2 / 6- b- R3TMDHT);
• PEI polyethyleneimine polymer
• PEIE ethoxylated polyethyleneimine polymer
• the material constituting the interface layer may be selected from the group consisting of:
• a doped conductive or semiconductor polymer in particular the materials marketed under the names Plexcore OC RG-1100, Plexcore OC RG-1200 by Sigma-Aldrich, PEDOT: PSS; a molecular host / dopant system, especially the products marketed by Novaled under the names NHT-5 / NDP-2 or NHT-18 / NDP-9;
• a polyelectrolyte for example the National
• a metal oxide for example a molybdenum oxide, a vanadium oxide, ITO, or a nickel oxide;
• NPB Bis [(1-naphthyl) -N-phenyl] benzidine
• TPD triarylamines
• the material constituting the interface layer is a doped conductive or semiconductor polymer.
• the active region of the light-emitting diode is for example a light-emitting material.
• the electroluminescent material may be a polymeric electroluminescent material, as described in the publication entitled “Progress with Light-Emitting Polymers” by MT Bernius, M. Inbasekaran, J. O. Brien and W. Wu (Advanced Materials, 2000, Volume 12 , Issue 23, pages 1737-1750) or a low molecular weight electroluminescent material such as trisquinoline aluminum, as described in US Pat. No. 5,294,869.
• the electroluminescent material may comprise a mixture of electroluminescent material and a fluorescent dye or may comprise a layered structure of electroluminescent material and a fluorescent dye.
• Light-emitting polymers include polyfluorene, polybenzothlazole, polytriarylamine, poly
• Preferred light emitting polymers include homopolymers and copolymers of 9, 9-di-n-octylfluorene (F8), N, N-bis (phenyl) -4-sec-butylphenylamine (TFB), benzothiadiazole (BT) and 4,4'-N, N '-dicarbazole-biphenyl (CBP) doped with tris (2- phenylpyridine) of iridium (Ir (ppy) 3).
• the thickness of the active region 46 is between 1 nm and 100 nm.
• the conductive tracks 50, 51, 56 may be of the same material as the electrodes 36 or 40.
• the thickness of the conductive tracks 50, 51 may be less than 50 ⁇ m.
• the active regions 54 may be of polycrystalline silicon, in particular polycrystalline silicon deposited at low temperature (LTPS), amorphous silicon (aSi), zinc oxide-gallium-indium (IGZO), polymer or comprise small molecules used in a known manner for the production of thin-film organic transistors (OTFT, acronym for Organic Thin Film Transistor).
• LTPS polycrystalline silicon deposited at low temperature
• aSi amorphous silicon
• IGZO zinc oxide-gallium-indium
• OTFT acronym for Organic Thin Film Transistor
• Each insulating layer 52, 58 may be SiN, SiO2 or an organic polymer.
• the insulating layer 52 may have a thickness of between 10 nm and 4 ⁇ m and the insulating layer 58 may have a thickness of between 10 nm and 4 ⁇ m.
• the optical matrix 30 may further comprise a polarizing filter, arranged for example on the coating 44.
• the optical matrix 30 may further comprise color filters vis-à-vis the photodetectors 38 to obtain a wavelength selection radiation reaching the photodetectors 38.
• FIG. 3 is a top view, partial and schematic, of the optical matrix 30 shown in FIG. 2.
• FIG. 3 shows by dashed lines 60 the outline of the zone in which the photodiodes 38 are formed, and by solid lines and dashed lines 62 the contours of the zones in which are formed the conductive tracks 50 and 51.
• a portion of zones 62, shown in solid lines, is not covered by the coating 44 so as to allow connection to the conductive tracks 50, 51 of the selection circuit 18, the read circuit 22 and the potential source 28, not shown in figure 3.
• FIGS. 4A to 4C are sectional, partial and schematic views of structures obtained at successive stages of an embodiment of a method for manufacturing the optical matrix 30.
• FIG. 4A shows the structure obtained after the formation of the stack of layers comprising the transistors T, the electrodes 36, the photodetectors 38, the electrode 40 and the layer of the adhesive material 42.
• the process for forming the layers of the optical matrix may correspond to a so-called additive process, for example by direct printing of the material making up the organic layers at the desired locations, in particular in the form of sol-gel, for example by printing with inkjet, heliography, screen printing, flexography, spray coating (English spray coating) or drop-casting.
• the process for forming the layers of the optical matrix may correspond to a so-called subtractive process, in which the material making up the organic layers is deposited on the entire structure and in which the unused portions are then removed, for example by photolithography or laser ablation.
• the deposition on the entire structure may be carried out for example by liquid, sputtering or evaporation.
• This may include processes such as spin coating, spray coating, heliography, slot-die coating, blade-coating, flexography or screen printing.
• the layers are metallic, the metal is, for example, deposited by evaporation or cathodic sputtering on the entire support and the metal layers are defined by etching.
• the layers of the optical matrix can be made by printing techniques.
• the materials of these layers described above can be deposited in liquid form, for example in the form of conductive, semiconducting or insulating inks using inkjet printers.
• materials in liquid form here also means gel materials deposited by printing techniques.
• Annealing steps are optionally provided between the deposits of the different layers, but the annealing temperatures may not exceed 150 ° C, and the deposition and any annealing may be carried out at atmospheric pressure.
• Figure 4B shows the structure obtained after the deposition of a film 68 of the same material as the desired coating 44. This can be achieved by a lamination step in which the film 68 is applied against the adhesive layer 42, possibly under pressure and with heating.
• Figure 4C shows the structure obtained after a film cutting step 68 to form the coating 44.
• the cutting step may be a laser cutting step.
• the laser is a continuous CO2 type laser with a wavelength of between 9.4 ⁇ m and 10.6 ⁇ m.
• the power of the laser is between 1 W and 100 W, the speed of movement between 1 cm / s and 10 m / s.
• An alternative is to use a continuous nitrogen laser with a wavelength of 337.1 nm or a pulsed laser Yag with wavelengths 1050 nm to 1070 nm, 1550 nm or 2100 nm.
• the cutting is preferably done with a CO2 laser.
• the path followed by the laser beam is indicated schematically in FIG. 4C by arrows 64.
• the laser cutting step can lead to a deterioration of the conductive tracks 50, 51 by the laser beam, and in particular a localized interruption of the conductive tracks 50, 51 on the laser path.
• the substrate 32 in the case where the substrate 32 is of a plastic material, the substrate 32 can absorb the laser beam, which can cause localized deterioration of the substrate 32 on the laser path.
• the deteriorations due to the laser cutting step can be avoided by providing a track of a material reflecting the laser radiation and / or a material absorbing the laser radiation on the path of the laser when of the cutting step, this track being interposed between the laser beam on the one hand and the conductive tracks 50, 51 and the substrate 32 on the other hand.
• the width of this track is greater than 500 ⁇ m, preferably greater than 1 mm.
• Figures 5 and 6 are respectively a sectional view and a top view, partial and schematic, of an embodiment of an optical matrix 70 comprising a protection for the cutting step.
• the optical matrix 70 comprises all the elements of the optical matrix 30 shown in FIG. 2 and furthermore comprises at least one reflecting track 72 resting on the insulating layer 58 on the film cutting path 68.
• the reflective track 72 is an electrically conductive track made simultaneously with the electrodes 36 and the same material as the electrodes 36 when the electrodes 36 are reflective material.
• FIG. 7 is a partial, schematic sectional view of an embodiment of an optical matrix 75 comprising a protection for the cutting step.
• the optical matrix 75 comprises all the elements of the optical matrix 30 shown in FIG. 2 and further comprises a reflective track 76 resting on the insulating layer 52 on the cutting path of the film 68.
• the reflective track 76 is an electrically conducting track made simultaneously with the tracks 56 and of the same material as the tracks 56.
• the material composing the track 72 or 76 is chosen from the group comprising:
• a metal or a metal alloy for example silver (Ag), gold (Au), lead (Pb), palladium (Pd), copper (Cu), nickel (Ni), tungsten (W), molybdenum (Mo), aluminum (Al), or chromium (Cr) or an alloy of magnesium and silver (MgAg);
• the thickness of the track 72 or 76 may be between 10 nm and 10 ⁇ m.
• the track 72, 76 When the track 72, 76 is electrically conductive, it can be connected, during the operation of the optical matrix, to a source of a low reference potential, for example ground, at the potential source 28 or at a source of the potential controlling the closing of transistors T.
• a source of a low reference potential for example ground
• FIG. 8 is a partial, schematic sectional view of an embodiment of an optical matrix 80 comprising a protection for the cutting step.
• the optical matrix 80 comprises all the elements of the optical matrix 30 shown in FIG. 2 and further comprises a track 82 of a material absorbing laser radiation and resting on the insulating layer 58 on the cutting path of the laser.
• the track 82 may be of colored resin, for example a colored or black SU-8 resin.
• the track 82 is formed on the insulating layer 58 before the deposition of the adhesive layer 42, for example according to one of the additive or subtractive process techniques described above.
• the thickness of the track 82 may be between 100 nm and 50 ⁇ m.
• FIG. 9 is a partial, schematic sectional view of an embodiment of an optical matrix 85 comprising a protection for the cutting step.
• Optical matrix 85 comprises all the elements of the optical matrix 30 shown in FIG. 2 and further comprises a track 86 of a laser radiation absorbing material resting on the adhesive layer 42 on the coating cutting path. 44.
• Runway 86 may be of the same material as runway 82.
• the track 86 is formed on the adhesive layer 42 before applying the film forming the coating 44 for example according to one of the additive or subtractive process techniques described above.
• the optical matrix may comprise both photodetectors and electroluminescent components.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• General Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Electroluminescent Light Sources (AREA)
• Thin Film Transistor (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Led Device Packages (AREA)

Applications Claiming Priority (2)

Publications (1)

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• 2018
  • 2018-06-04 FR FR1800561A patent/FR3082055B1/fr active Active
• 2019
  • 2019-06-03 CN CN201980037764.9A patent/CN112262485A/zh active Pending
  • 2019-06-03 JP JP2020567908A patent/JP2021527319A/ja active Pending
  • 2019-06-03 KR KR1020207037677A patent/KR20210035097A/ko not_active Application Discontinuation
  • 2019-06-03 EP EP19742841.0A patent/EP3811428A1/de active Pending
  • 2019-06-03 US US15/734,180 patent/US20210167324A1/en not_active Abandoned
  • 2019-06-03 WO PCT/FR2019/051305 patent/WO2019234339A1/fr unknown

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