EP3992672A1 - Optisches element, optisches system und optische vorrichtung - Google Patents

Optisches element, optisches system und optische vorrichtung Download PDF

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Publication number
EP3992672A1
EP3992672A1 EP21202894.8A EP21202894A EP3992672A1 EP 3992672 A1 EP3992672 A1 EP 3992672A1 EP 21202894 A EP21202894 A EP 21202894A EP 3992672 A1 EP3992672 A1 EP 3992672A1
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EP
European Patent Office
Prior art keywords
layer
film
optical element
sio
refractive index
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Granted
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EP21202894.8A
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English (en)
French (fr)
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EP3992672B1 (de
Inventor
Kazue Uchida
Masuo Ban
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof

Definitions

  • the present disclosure relates to an optical element.
  • JP 2002-202401 discloses an antireflection film having an outermost layer, which is a layer (silicon oxide layer) including SiO 2 or SiO as a principal component, and a next layer, which is a layer (magnesium fluoride layer) including MgF 2 as a principal component.
  • JP 2017-134404 discloses an antireflection film consisting of a multi-laminated layer in which silicon oxide layers and tantalum oxide layers are alternately laminated, a magnesium fluoride layer formed on the multi-laminated layer, and a silicon oxide layer as an outermost layer formed on the magnesium fluoride layer.
  • the present disclosure provides an optical element, an optical system, and an optical apparatus each of which has high mechanical strength and high environmental durability.
  • the present disclosure in a first aspect provides an optical element as specified in claims 1 to 11.
  • the present disclosure in a second aspect provides an optical system as specified in claim 12.
  • the present disclosure in a further aspect provides an optical apparatus as specified in claim 13.
  • FIG. 1 is a schematic sectional view illustrating the optical element 300.
  • the optical element 300 includes a transparent resin substrate 200 which is a base material consisting of resin material, and an antireflection film 100 formed on the transparent resin substrate 200.
  • the antireflection film 100 includes a multilayer film 111 as a first film and a multilayer film 101 as a second film, in order from the side closer to the transparent resin substrate 200.
  • the antireflection film 100 consists of a multilayer film 111 formed on the transparent resin substrate 200 and a multilayer film 101 formed on the multilayer film 111, i.e., formed at a position farthest from the transparent resin substrate 200.
  • the multilayer film 111 consists of layers 11, 12, 13, 14, 15, and 16, in order from the side closer to the transparent resin substrate 200. In this embodiment, the multilayer film 111 consists of six layers, but the present disclosure is not limited to this. The number of layers of the multilayer film 111 may be any number as long as the multilayer film 111 consists of one or more layer.
  • the multilayer film 101 consists of three layers of a layer 01 as a first layer, a layer 02 as a second layer, and a layer 03 as a third layer, in order from the side closer to the multilayer film 111.
  • the layers 01 and 03 forming the multilayer film 101 each include silicon oxide (SiO 2 ), and the layer 02 includes magnesium fluoride (MgF 2 ).
  • the layers 01 and 03 each consist of silicon oxide, or each include silicon oxide as a principal component, that is, are layers each including silicon oxide at a weight ratio of 90% or more.
  • the layer 02 consists of magnesium fluoride or includes magnesium fluoride as a principal component.
  • the antireflection film 100 When the antireflection film 100 is vapor-deposited on the transparent resin substrate 200, it is necessary to form films with the transparent resin substrate 200 in a state of non-heated, or of heated at low temperature of 80 degrees or less.
  • Magnesium fluoride vapor-deposited in the state of non-heated, or of heated at low temperature of 80 degrees or less has low film strength and strong tensile stress.
  • silicon oxide even when vapor-deposited in the state of non-heated, or of heated at a low temperature of 80 degrees or less, silicon oxide has high film strength and strong tensile stress.
  • a magnesium fluoride layer is sandwiched between silicon oxide layers as in the configuration of the multilayer film 101, so that the film strength can be improved and adhesion can be improved by canceling the stress.
  • conditional expression (1) may be satisfied where n1, n2, and n3 respectively represent refractive indexes at a d-line of the layers 01, 02, and 03, d1, d2, and d3 (nm) respectively represent physical film thicknesses of the layers 01, 02, and 03, and ⁇ represents a wavelength of the d-line.
  • ⁇ / 8 ⁇ n 1 d 1 + n 2 d 2 + n 3 d 3 ⁇ ⁇ / 2
  • the numerical range of the conditional expression (1) may be set to that in the following conditional expression (1a). ⁇ / 6 ⁇ n 1 d 1 + n 2 d 2 + n 3 d 3 ⁇ ⁇ / 3
  • antireflection performance is improved when the outermost layer, i.e., a top layer, is made from material having a low refractive index and an optical film thickness of the outermost layer is set to about ⁇ /4.
  • the antireflection performance can be improved by regarding the multilayer film 101 as a layer substantially equivalent to the low refractive index material of the outermost layer and satisfying the conditional expression (1).
  • conditional expressions (2) and (3) may be satisfied. 0.2 ⁇ n 2 d 2 / n 1 d 1 + n 2 d 2 + n 3 d 3 ⁇ 0.9 0.5 ⁇ n 1 d 1 / n 3 d 3 ⁇ 2.0
  • the numerical ranges of the conditional expressions (2) and (3) may be set to those in the following conditional expressions (2a) and (3a). 0.3 ⁇ n 2 d 2 / n 1 d 1 + n 2 d 2 + n 3 d 3 ⁇ 0.7 0.8 ⁇ d 1 / d 3 ⁇ 1.2
  • the film thickness of the layer 02 of the multilayer film 101 increases, an average refractive index of the multilayer film 101 decreases, but the film strength decreases, and tensile stress increases and makes it difficult to ensure adhesion.
  • the film thicknesses of the layers 01 and 03 increase, the film strength improves and the tensile stress decreases and makes it easy to ensure the adhesion, but the average refractive index of the multilayer film 101 increases.
  • the transparent resin substrate 200 expands as the temperature rises.
  • Magnesium fluoride has a large tensile stress.
  • vapor-deposited films made from silicon oxide have compressive stress, but stronger compressive stress is required to offset the stress of magnesium fluoride.
  • the compressive stress is enhanced by using silicon oxide material including a small amount of aluminum. Therefore, material forming the layers 01 and 03 may be material including silicon oxide as a principal component and a small amount of aluminum.
  • the refractive indexes n1 and n3 may satisfy the following conditional expressions (4) and (5), respectively. 1.4 ⁇ n 1 ⁇ 1.5 1.4 ⁇ n 3 ⁇ 1.5
  • Each of the layers 01 and 03 may include aluminum at a weight ratio of 10% or less.
  • the addition of aluminum is effective even when the added amount is very small. Even a silicon oxide film including aluminum at a weight ratio of 0.001% can hinder film cracking and film peeling from occurring when combined with a magnesium fluoride film.
  • the multilayer film 111 may be a combination of high refractive index material and medium refractive index material, which has a refractive index at the d-line of about 1.6 to 1.8, but may be a layer (alternate layer) formed by alternately laminating high refractive index material and low refractive index material.
  • the high refractive index material used in the multilayer film 111 may be one of tantalum oxide, titanium oxide, lanthanum oxide, and zirconium oxide, or may be material whose principal component is a mixture of more than one of them.
  • the high refractive index material has tensile stress.
  • the low refractive index material used in the multilayer film 111 may be the same material as the layers 01 and 03 so as to be easily manufactured and to offset the stress of the antireflection film 100. Since the high refractive index material has the tensile stress and the low refractive index material has the compressive stress, the stress is offset by forming the alternate layer.
  • the alternate layer is not limited to the six layers as illustrated in FIG. 1 , as long as the alternate layer includes at least one layer for each of two types of layers made from material different from each other.
  • a layer 11 which is a bottom layer of the multilayer film 111 may be made from the same material as the layers 01 and 03.
  • the transparent resin substrate 200 generally has a thermal expansion coefficient larger than that of glass. When material having strong compressive stress is used on the transparent resin substrate 200, the layer 11 can follow a shape variation of the transparent resin substrate 200 expanding due to high temperature, and hindering film cracking from occurring.
  • a film forming method for the antireflection film 100 consisting of the multilayer film 111 and the multilayer film 101 is not particularly limited as long as it is physical vapor deposition such as vapor deposition, a sputtering method, and an ion plating method.
  • vapor deposition may be used because fluoride is less likely to decompose.
  • heating methods for vapor deposition material include electrical resistance heating, electron-beam physical vapor deposition, pulsed laser deposition, and the like.
  • Electron-beam physical vapor deposition may be used because it can form a film with a substrate in a non-heated state by directly heating film material, and can provide a film of relatively high quality with small amount of contamination.
  • An ion beam assist method may also be used. By an independent ion source playing a role of assisting vapor deposition, it is possible to form a dense film with low absorption and scattering and high strength.
  • conditional expression (6) may be satisfied where nd represents a refractive index (average refractive index at the d-line) of the transparent resin substrate 200. 1.48 ⁇ nd ⁇ 1.80
  • conditional expression (7) may be satisfied where ⁇ (10 -5 /°C) represents a coefficient of linear expansion of the transparent resin substrate 200. 1.5 ⁇ ⁇ ⁇ 30.0
  • FIG. 1 is a schematic sectional view of an optical element 300 in an Example 1 of the present disclosure.
  • the optical element 300 in this example is an optical element in which an antireflection film 100 is formed on a transparent resin substrate 200.
  • the transparent resin substrate 200 is made from COP resin (Zeon Corporation, "ZEONEX") having a refractive index of 1.53 (at the d-line).
  • layers 11, 13, 15, 01, and 03 use SiO 2
  • layers 12, 14, and 16 use mixture of ZrO 2 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 1 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • a film forming method for the antireflection film 100 in this example is as follows.
  • the antireflection film 100 is formed by vapor deposition.
  • An electron beam was used to heat evaporation material.
  • Ion beam-assisted vapor deposition was performed to form a denser film.
  • the inside of a vacuum chamber of a vapor deposition apparatus was exhausted in a non-heated state up to a high-vacuum range of about 2 ⁇ 10 -3 (Pa). After it was ensured that the inside of the vacuum chamber was in the high vacuum state, Ar as inert gas was introduced into an ion gun and the ion gun was discharged. After the ion gun became a stable state, oxygen was introduced into the vacuum chamber, and ion assisted vapor deposition using oxygen ion was performed at a vacuum pressure of about 1 ⁇ 10 -2 (Pa).
  • FIG. 2 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%).
  • the reflectance is 0.25% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • the layer 02 made from magnesium fluoride is formed by non-heating vapor deposition, and has low strength and strong tensile stress.
  • a layer of silicon oxide formed by non-heating vapor deposition has high strength and has compressive stress.
  • the multilayer film 101 with magnesium fluoride film sandwiched between silicon oxide films as a whole has a structure in which strength is high and stress is offset, and is a film with good environmental reliability that does not cause cracking or peeling.
  • the antireflection film 100 was subjected to the following durability tests for confirming its durability under various conditions.
  • a prepared sample was left for 1000 hours in a constant temperature bath set to a temperature of 60 degrees and a humidity of 90%, and thereafter the appearance of the antireflection film 100 was visually observed.
  • a prepared sample was left for 1000 hours in a constant temperature bath set to a temperature of ⁇ 30 degrees, and thereafter the appearance of the antireflection film 100 was visually observed.
  • a prepared sample was left for 12 hours in a constant temperature bath set to 70 degrees, and thereafter the appearance of the antireflection film 100 was visually observed.
  • Adhesive tape was put on a surface of the antireflection film 100 of a prepared sample, and the tape was peeled off in a direction perpendicular to the film surface. It was repeated five times and whether or not the film had peeled off was confirmed by visual observation.
  • the antireflection film 100 was rubbed for ten times back and forth with a lens-cleaning paper soaked with solvent with a load of about 200 g applied, the appearance of the antireflection film 100 was visually observed.
  • An optical element in an Example 2 is made by using the same transparent resin substrate, the same vapor deposition material, and the same vapor deposition condition as those in the Example 1.
  • Table 2 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 3 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%).
  • the reflectance is 0.25% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 3 is made from special PC resin (Mitsubishi Gas Chemical Company, Inc., "EP-5000").
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 0.001%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 3 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • a film forming method for an antireflection film 100 in this example is electron-beam physical vapor deposition and ion-assisted vapor deposition as in the Example 1.
  • FIG. 4 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%).
  • the reflectance is 0.25% or less in a wavelength range of 420 to 680 nm, which is
  • Table 18 indicates the results of the durability tests. It could be confirmed that no film cracking or film peeling occurred in every test, and that a good antireflection film was formed.
  • the layer 01 and the layer 03 are SiO 2 layers each including Al at the weight ratio of 0.001%. These layers have very strong compressive stress. MgF 2 has very strong tensile stress, and resin material is very likely to expand. According to this example, these stresses are offset, and thus it is possible to provide an antireflection film having a very high environmental durability.
  • Multilayer film 101 Layer 03 SiO 2 (Al content: weight ratio 0.001%) 1.45 20.0 Layer 02 MgF 2 1.38 60.9 Layer 01 SiO 2 (Al content weight ratio 0.001%) 1.45 18.0 Multilayer film 111 Layer 16 Ta 2 O 5 +TiO 2 2.00 55.9 Layer 15 SiO 2 (Al content weight ratio 0.001%) 1.45 15.0 Layer 14 Ta 2 O 5 +TiO 2 200 57.7 Layer 13 SiO 2 (Al content weight ratio 0.001%) 1.45 471 Layer 12 Ta 2 O 5 +TiO 2 2.00 22.4 Layer 11 SiO 2 (Al content: weight ratio 0.001%) 1.45 388 Resin substrate 200 Special PC 1.64 ⁇
  • a transparent resin substrate 200 in an Example 4 is made from special PC resin (Mitsubishi Gas Chemical Company, Inc., "EP-5000").
  • layers 12, 14, 01, and 03 use SiO 2 including Al at a weight ratio of 1.0%
  • layers 11, 13, and 15 use mixture of ZrO 2 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 4 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 5 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 5 is made from COP resin (Zeon Corporation, "ZEONEX").
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 2.0%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 5 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 6 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.25% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 6 is made from COP resin (Zeon Corporation, "ZEONEX").
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 3.0%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 6 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 7 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 7 is made from COP resin (Zeon Corporation, "ZEONEX").
  • layers 12, 14, 01, and 03 use SiO 2 including Al at a weight ratio of 2.0%
  • layers 11, 13, and 15 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 7 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 8 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 8 is made from special PC resin (Mitsubishi Gas Chemical Company, Inc., "EP-5000").
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 3.0%
  • layers 12, 14 and, 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 8 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 9 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.25% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 9 is made from special PC resin (Mitsubishi Gas Chemical Company, Inc., "EP-5000").
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 2.5%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 9 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 10 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 10 is made from COP resin (Zeon Corporation, "ZEONEX").
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 4.5%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 10 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 11 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 11 is made from COP resin (Zeon Corporation, "ZEONEX").
  • layers 12, 14, 01, and 03 use SiO 2 including Al at a weight ratio of 5.2%
  • layers 11, 13, and 15 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 11 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 12 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 12 is made from special PC resin (Mitsubishi Gas Chemical Company, Inc., "EP-5000").
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 4.5%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 12 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 13 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 13 is made from special PC resin (Mitsubishi Gas Chemical Company, Inc., "EP-5000").
  • layers 12, 14, 01, and 03 use SiO 2 including Al at a weight ratio of 10.0%
  • layers 11, 13, and 15 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 13 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 14 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 14 is made from polyester film (PET resin) (Toray Industries, Inc., "Lumirror T60").
  • PET resin polyester film
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 5.2%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 14 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 15 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.25% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • a transparent resin substrate 200 in an Example 15 is made from polyester film (PET resin) (Toray Industries, Inc., "Lumirror T60").
  • PET resin polyester film
  • layers 11, 13, 15, 01, and 03 use SiO 2 including Al at a weight ratio of 5.2%
  • layers 12, 14, and 16 use mixture of Ta 2 O 5 and TiO 2
  • a layer 02 uses MgF 2 .
  • Table 15 indicates details of a film configuration of the optical element in this example.
  • a refractive index and a film thickness of each material satisfy the expressions (1), (2), and (3).
  • FIG. 16 indicates a reflectance characteristic of the optical element in this example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%). The reflectance is 0.3% or less in a wavelength range of 420 to 680 nm, which is a very good characteristic.
  • FIG. 19 is a sectional view of an optical system 400.
  • the optical system 400 includes a plurality of optical elements G401 to G411.
  • a reference numeral 402 denotes a diaphragm and a reference numeral 403 denotes an image plane.
  • the optical elements G401 to G411 are lenses, respectively. Of these lenses, at least one of entrance surfaces and emission surfaces is provided with the antireflection film according to any one of the Examples 1 to 15. That is, the optical system 400 includes the plurality of optical elements G401 to G411, and the plurality of optical elements G401 to G411 includes the optical element 300 provided with the antireflection film according to any one of the Examples 1 to 15.
  • the optical system 400 in this Example is not limited to an image pickup optical system used in an image pickup apparatus described later, and may be applied to optical systems for various purposes such as binoculars, projectors, and telescopes.
  • FIG. 20 is an external perspective view illustrating the image pickup apparatus (digital camera 500).
  • the digital camera 500 includes a camera body 502 and a lens apparatus 501 which is integrally configured with the camera body 502.
  • the lens apparatus 501 may be an interchangeable lens, which is detachably attachable to the camera body 502, such as a lens for a single-lens reflex camera and a lens for a mirrorless camera.
  • the lens apparatus 501 includes an optical system 400 according to any one of the Examples 1 to 15.
  • the camera body 502 includes an image sensor 503 such as a CMOS sensor and a CCD sensor.
  • the image sensor 503 is disposed on an image plane 403 in the optical system 400.
  • a Comparative Example 1 uses the same vapor deposition material, the same transparent resin substrate, and the same vapor deposition condition as those in the Example 10.
  • Table 16 indicates a film configuration of an optical element in this comparative example.
  • a multilayer film 101 is made only of a magnesium fluoride layer.
  • FIG. 17 indicates a reflectance characteristic of the optical element in this comparative example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%).
  • the reflectance is 0.2 or less in a wavelength range of 420 to 680 nm, achieving lower reflectance than those in the Examples 1 to 15.
  • Table 18 indicates the results of the durability tests.
  • An outermost layer in this comparative example is made of a magnesium fluoride film having low strength. Therefore, in the configuration of this comparative example, film cracking and film peeling occur in each durability test, which is not suitable for use as an antireflection film.
  • Multilayer film 101 Layer 01 MgF 2 1.38 99.3 Multilayer film 111 Layer 16 Ta 2 O 5 +TiO 2 2.00 57.2 Layer 15 SiO 2 (Al content: weight ratio 4.5%) 1.47 15.0 Layer 14 Ta 2 O 5 +TiO 2 2.00 51.0 Layer 13 SiO 2 (Al content: weight ratio 4.5%) 1.47 54.7 Layer 12 Ta 2 O 5 +TiO 2 2.00 10.0 Layer 11 SiO 2 (Al content: weight ratio 4.5%) 1.47 90.9 Resin substrate 200 COP resin 1.53 ⁇
  • a Comparative Example 2 uses the same vapor deposition material, the same transparent resin substrate, and the same vapor deposition condition as those in the Example 10.
  • Table 17 indicates a film configuration of an optical element in this comparative example.
  • a multilayer film 101 is made only of a silicon oxide layer.
  • Table 18 indicates the results of the durability tests.
  • An outermost layer in this comparative example is made of a silicon oxide film having high strength. Therefore, no film cracking and no film peeling occurred in every durability test.
  • FIG. 18 indicates a reflectance characteristic in this comparative example.
  • a horizontal axis represents wavelength (nm) and a vertical axis represents reflectance (%).
  • the reflectance is about 0.5% in a wavelength range of 420 to 680 nm, which is higher than those in the Examples 1 to 15.
  • ghost and flare may be caused.

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JP2002202401A (ja) 2000-12-28 2002-07-19 Minolta Co Ltd 反射防止膜およびそれを備えたプラスチック光学部品
US20170090071A1 (en) * 2015-09-30 2017-03-30 Topcon Corporation Antireflection film, optical element and ophthalmology apparatus
JP2017134404A (ja) 2016-01-25 2017-08-03 キヤノン株式会社 光学素子及び光学素子の製造方法
EP3660548A1 (de) * 2018-11-26 2020-06-03 Konica Minolta, Inc. Optisches element und herstellungsverfahren für ein optisches element

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EP0382477A1 (de) * 1989-02-07 1990-08-16 Tokuyama Corporation Harz mit hohem Brechungsindex
JP2002202401A (ja) 2000-12-28 2002-07-19 Minolta Co Ltd 反射防止膜およびそれを備えたプラスチック光学部品
US20170090071A1 (en) * 2015-09-30 2017-03-30 Topcon Corporation Antireflection film, optical element and ophthalmology apparatus
JP2017134404A (ja) 2016-01-25 2017-08-03 キヤノン株式会社 光学素子及び光学素子の製造方法
EP3660548A1 (de) * 2018-11-26 2020-06-03 Konica Minolta, Inc. Optisches element und herstellungsverfahren für ein optisches element

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