Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70058—Mask illumination systems
  • G03F7/7015—Details of optical elements
  • G03F7/70158—Diffractive optical elements
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/18—Diffraction gratings
  • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
  • G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/18—Diffraction gratings
  • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
  • G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
  • G02B5/1823—Plural gratings positioned on the same surface, e.g. array of gratings in an overlapping or superposed manner
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/18—Diffraction gratings
  • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/28—Interference filters
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70058—Mask illumination systems
  • G03F7/7015—Details of optical elements
  • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70058—Mask illumination systems
  • G03F7/7015—Details of optical elements
  • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70058—Mask illumination systems
  • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70058—Mask illumination systems
  • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70216—Mask projection systems
  • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
  • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

Definitions

• Optical diffraction component for suppressing at least one target wavelength by destructive interference
• the invention relates to an optical diffraction component for suppressing at least one target wavelength by destructive interference. Furthermore, the invention relates to an EUV collector of a projection exposure apparatus comprising such an optical diffraction component, an illumination system comprising such an EUV collector, an optical system comprising such an illumination system, a projection exposure apparatus comprising such an optical system, and a method for producing a structured component with the aid of such a projection exposure apparatus, and a structured compo nent produced in this way.
• An EUV collector comprising an optical diffraction component in the form of an optical grating is known from WO 2017/207401 A1 and from WO 2014/114405 A2.
• Embodiments of optical gratings for suppressing IR wavelengths in EUV projection exposure apparatuses are known from the publication“Multilayer EUV optics with integrated IR- suppression grat ings”, T. Feigl et al., 2016 EUVL Workshop, Berkeley, June 13-16, 2016.
• EP 1 540 423 B 1 describes a grating-based spectral filter for suppressing radiation outside a used band in an EUV lithography system.
• 2014/0131586 Al describes a phase grating for a mask inspection system.
• DE 10 2009 044 462 Al describes an optical filter element comprising a grating structure for diffracting infrared radiation within an EUV illumina tion system.
• DE 195 16 741 Al discloses a diffraction-optically effective structure ar rangement.
• DE 100 54 503 Al discloses a light-diffracting binary grating structure.
• WO 2007/031 992 Al discloses a diffraction grating having a spatially changing duty cycle.
• An optical grating can be used for suppressing stray light of a wavelength that deviates from that of used light.
• the stray light can then be diffracted by the optical grating towards a light trap (beam dump), whereas used light takes a different path.
• This object is achieved according to a first aspect according to the inven tion by means of an optical diffraction component, - comprising a periodic grating structure profile comprising diffrac tion structures, having three diffraction structure levels,
• the arrangement of the diffraction structures is such that a wavelength range around a first target wavelength li in the infrared wavelength range, which first target wavelength is diffracted by the grating structure profile, has radiation components having at least three different phases which interfere with one another destructively at least in the zero and/or +/- first order(s) of diffraction of the first target wavelength li,
• the diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regu larly along a period running direction
• diffraction structure levels comprise:
• a negative diffraction structure level which is arranged lower by an optical path length of li/4 +/- 20% relative to the neutral dif fraction structure level.
• a range to be suppressed around the target wavelength li can be chosen so as to encompass a plurality of wavelengths to be suppressed, for example the different wavelengths of a prepulse and of a main pulse of an EUV plasma light source.
• the optical diffraction component in accordance with the first aspect firstly the positive diffraction structure level and secondly the negative diffraction structure level are embodied with a tolerance range of a maximum of 20% around the optical path length difference of li/4 rela tive to the neutral diffraction structure level.
• This tolerance in comparison with the path length difference li/4 can also be less than +/- 20% and can be for example +/- 10%, +/- 5%, +/- 3%, +/- 2%, or even +/- 1%.
• a grating period of the grating structure profile can be subdivided into four period sections of the diffraction structure levels.
• Two of the four pe riod sections can be embodied as neutral diffraction structure sections hav ing the neutral diffraction structure level.
• One of the four period sections can be embodied as a positive diffraction structure section having the posi tive diffraction structure level.
• One of the four period sections can be em bodied as a negative diffraction structure section having the negative dif fraction structure level.
• the two neutral diffraction structure levels can be ar ranged in the grating period in a manner separated from one another by a positive diffraction structure level or by a negative diffraction structure level.
• the separation of the two neutral diffraction structure levels from one another enables a sequence of the diffraction structure levels in which in the period running direction an identical number of falling edges or side- walls (structure depth increases, edge“valleywards”) and rising edges or sidewalls (structure depth decreases again, edge“peakwards”) having in each case mutually comparable structure height differences are present.
• the falling edges and secondly the rising edges then respectively compensate for one another as far as a possible phase error is concerned, with the result that an entire phase error, possibly stemming from an unde sired edge structuring and/or an undesired edge position, is reduced or wholly avoided.
• the two neutral diffraction structure levels can also be ar ranged directly successively in the grating period as a neutral diffraction structure level of double length.
• the four period sections into which the grating period of the grating struc ture profile can be subdivided can have an identical length along the period running direction, wherein an identical length is present if the lengths differ from one another by less than +/- 20%.
• Such an optical diffraction compo nent gives rise to a particularly good destructively interfering suppressing effect for the target wavelength.
• the lengths of the four period sections can deviate from one another by less than 20%, for example by less than 15%, by less than 10%, by less than 5%, by less than 2% or even by less than 1%.
• the lengths of the four period sections can also be exactly identical.
• the four period sections into which the grating period of the grating struc ture profile can be subdivided can have the following sequence: positive diffraction structure level, neutral diffraction structure level, negative dif fraction structure level, neutral diffraction structure level.
• Such a sequence of the period sections has been found to be particularly suitable.
• a corre sponding sequence is achievable by cyclically interchanging the sequence indicated above, thus resulting in the following sequence, for example: neutral diffraction structure level, positive diffraction structure level, neu tral diffraction structure level, negative diffraction structure level.
• the following sequence of the four period sections is also possible: Nega tive diffraction structure level, neutral diffraction structure level, positive diffraction structure level, neutral diffraction structure level. Cyclic inter change is possible in the case of this variant, too.
• the arrangement of the diffraction structures can be such that a tar get wavelength range, containing the target wavelength, in the infrared wavelength range, which is diffracted by the grating structure profile, has radiation components having at least three different phases which interfere with one another destructively at least in the zero and/or +/- first order(s) of diffraction of the first target wavelength, wherein the target wavelength range also includes, besides the first target wavelength li, a second target wavelength " ki different therefrom, wherein the arrangement of the diffrac tion structures is such that a wavelength range around the second target wavelength in the infrared wavelength range, which is diffracted by the grating structure profile, also has radiation components having at least three different phases which interfere with one another destructively at least in the zero and/or +/- first order(s) of diffraction of the first target wavelength, wherein the target wavelength range also includes, besides the first target wavelength, a target wavelength different therefrom,
• the upper limit value can be 0.037%, for example.
• the upper limit value can also be significantly smaller still, for example 0.0002%.
• the two target wave lengths that are suppressed by the at least two diffraction structure groups of the optical diffraction component can be exactly identical.
• a deviation (li - li) 2 / (li + l2) 2 characterizing the difference between the two target wavelengths can be greater than 0.0001%, can be greater than 0.001%, can be greater than 0.01%, can be greater than 0.1%, can be greater than 0.2%, can be greater than 0.5%, can be greater than 0.7% and can also be even greater.
• the target wavelengths can be in the IR wavelength range, for example in the range of the typical emission wavelengths of CO2 lasers at 10.6 pm. Al ternatively or additionally, wavelengths in the NIR wavelength range, in the visible wavelength range, in the UV wavelength range or else in the DUV wavelength range can constitute target wavelengths to be suppressed. One of the two target wavelengths can be 10.2 pm and the other of the two target wavelengths can be 10.6 mth.
• the target wavelengths can be adapted to the wavelengths of a prepulse and of a main pulse of an EUV plasma light source.
• the design of the at least two diffraction structure groups for suppressing two different target wavelengths results in a suppression of wavelengths within a predefinable wavelength bandwidth, which can also be referred to as suppression design bandwidth.
• Wavelengths which lie within this sup pression design bandwidth can correspond to the target wavelengths and/or can lie between the target wavelengths and/or can lie outside a wavelength range between the target wavelengths.
• a first target wavelength, for which the first diffraction structure group is designed can be 10.25 pm
• a second target wavelength, for which the second diffraction structure group is designed can be 10.55 pm.
• the choice of the target wavelengths arises depending on the requirements made of the optical diffraction com ponent for suppressing optionally a plurality of different wavelengths or wavelength bandwidths.
• a position of further minima of de structive interference besides the target wavelengths can also be taken into account or it is possible to take account of which wavelengths are deliber ately intended not to be suppressed.
• a first of the diffraction structure groups is embodied for suppressing a first target wavelength li in the zero order of diffrac tion
• a second of the diffraction structure groups is embodied for suppressing a second target wavelength " ki in the zero order of diffraction
• each of the binary diffraction structure groups has:
• second surface sections having a second structure depth, which alternate with the first surface sections along a running direc tion
• boundary regions between adjacent surface sections of each of the binary diffraction structure groups have a linear course
• an optical diffraction component comprising at least three diffrac tion structure levels which are in turn assignable to at least two diffraction structure groups which serve for suppressing respective target wavelengths that are not too far apart from one another surprisingly results in an im provement in a suppression of the target wavelength which distinctly goes beyond the suppression effect of the individual diffraction structure groups In comparison with optical diffraction components from the prior art, this results in degrees of freedom of design which can be used to enhance the flexibility of the possibilities for use of the optical diffraction component.
• the different diffraction structure groups can occupy the same optically used area of the optical diffraction component, that is to say do not have to be arranged on mutually separate sections on said optically used area.
• the optical diffraction component can be designed in particular such that the two diffraction structure groups are designed for suppressing the same tar get wavelength or stray light wavelength.
• the optical diffraction component can be designed for suppressing a plurality of target wavelengths with appropriate design of the diffraction structure groups.
• a diffractive effect is improved in comparison with an optical diffraction component comprising exactly one diffraction structure group.
• the same suppressing effect can thus be achieved with relaxed manufacturing tolerances in comparison with the prior art.
• a diffraction structure group is an arrangement of at least two diffraction structure levels which are arranged and fashioned for suppressing exactly one target wavelength.
• One example of a diffraction structure group is an optical grating. The assignment of the at least three diffraction structure levels to at least two diffraction structure groups is regularly such that at least one diffraction structure level is assigned to a plurality of diffraction structure groups.
• the optical diffraction component according to the first aspect discussed initially can also comprise at least one or else at least two diffraction struc ture groups of this type.
• the optical diffraction component can comprise exactly three diffraction structure levels and can comprise exactly two diffraction structure groups. Alternatively, the optical diffraction component can also comprise more than three diffraction structure levels, for example four, five, six or even more diffraction structure levels, and correspondingly also more than two diffraction structure groups.
• a binary structure is a structure comprising positive structures (“peaks”) and negative structures (“valleys”), wherein the total area of the positive structures corresponds to the total area of the negative structures within predefined tolerances.
• a difference between the total areas firstly of the positive structures and secondly of the negative structures can be less than 20%, can be less than 10%, can be less than 5%, can be less than 2% and can also be less than 1%.
• the total areas can also be exactly identical.
• boundary regions of the first and second binary structures are superimposed on one another at most along sections of the linear course of the boundary regions affords the possibility of producing the optical dif fraction component with the aid of comparatively simply fashioned litho graphic mask structures.
• the optical diffraction component can be fashioned such that a rising boundary region, that is to say a rising level sidewall, is assigned a falling boundary region with the same structure depth, that is to say the same structure height difference.
• the optical diffraction component according to the second aspect can addi tionally have features which have already been discussed above with refer ence to the optical diffraction component according to the preceding claims.
• the first boundary regions of the first of the two binary diffraction structure groups and the second boundary regions of the second of the two binary diffraction structure groups can run completely separately from one another. Such a completely separated course of the boundary regions results in a further simplification in particular of lithographic production of the optical diffraction compo nent.
• a first of the diffraction structure groups can be embodied as a first diffrac tion grating arranged on a grating surface.
• Said first diffraction grating can have a first grating period and a first structure depth, measured as optical path difference between first diffraction positive structures and first diffrac tion negative structures perpendicular to a surface section of the grating surface that respectively surrounds these first structures.
• a second of the diffraction structure groups can be embodied as a second diffraction grat ing arranged on the grating surface.
• Such a second diffraction grating can have a second grating period and a second structure depth, measured as op tical path difference between second diffraction positive structures and sec ond diffraction negative structures perpendicular to a surface section of the grating surface that respectively surrounds these second structures.
• an optical grating comprising at least two diffraction gratings having grating periods that are fundamentally independent of one another and structure depths that are fundamentally in dependent of one another, wherein the structure depth is small compared with the grating period at least in the case of one of the diffraction gratings, results, in comparison with optical gratings of the prior art, in degrees of freedom of design which can be used to enhance the flexibility of the possi bilities for use of the optical grating.
• the two diffraction gratings can oc- cupy the same grating surface, that is to say are then not arranged on sepa rate sections on the grating surface.
• the two diffraction gratings are then present, therefore, in a manner being superimposed on one another on the grating surface.
• the optical grating can be designed such that its stray light suppression is improved by virtue of the two diffraction gratings being de signed for suppressing identical stray light wavelengths.
• the optical grating can be designed such that a plurality of stray light wavelengths can be suppressed.
• the optical grating can be embodied as a reflection grating, but can alterna tively also be embodied as a transmission grating, and for example as a phase grating.
• the grating surface can be embodied as plane or else curved, e.g. convex or concave.
• the grating surface can be part of an optical surface of an opti cal component which additionally has some other optical function, for ex ample on a beam collector or a mirror.
• the first diffraction grating and/or the second diffraction grating can be embodied as a binary grating in which a surface area of the positive structures is equal to a surface area of the neg ative structures.
• the structure depth can be the height difference between the respective diffraction positive structures and the as sociated diffraction negative structures.
• the optical grating can additionally bear a highly reflective layer and op tionally auxiliary layers, in particular for protecting the optical grating and/or the highly reflective layer.
• the highly reflective layer can be em- bodied as a multilayer.
• the highly reflective layer can be embodied for EUV light in a wavelength range of, in particular, between 5 nm and 30 nm.
• the optical diffraction component can be embodied as a multilevel diffrac- tion grating having correspondingly arranged diffraction structure levels.
• a structure depth can be one sixth of the target wavelength.
• a structure depth can also be one quarter of the target wavelength.
• a grating period can be in the millimetres range and can be for example 1 mm or 2 mm.
• the diffraction structure levels can be embodied as plane surfaces.
• the grating periods of the different diffraction gratings can be in an inte gral ratio to one another.
• the grating periods can have a defined phase off set with respect to one another.
• a ratio of the grating periods can be 1 :2. With the use of three diffraction gratings, the ratio of the grating periods can be
• a surface area ratio of surface areas of the first diffraction positive struc tures to surface areas of the first diffraction negative structures can be in the range of between 0.9 and 1.1.
• a surface area ratio of surface areas of the second diffraction positive structures to surface areas of the second dif fraction negative structures can be in the range of between 0.9 and 1.1.
• Correspondingly precise binary diffraction structure groups result.
• a ratio between the first grating period and the first structure depth can be greater than 10.
• a ratio between the second grating period and the second structure depth can be greater than 10.
• a period ratio of the first grating period to the second grating period can be in the range of between 0.9 and 1.1.
• An optical diffraction component having such a period ratio can be manu factured well.
• the grating periods of the first and second diffraction grat ings can be exactly equal, but can also be different. The advantages of such an optical diffraction component make possible, in conjunction with good reflection conditions in particular for EUV wave lengths, a good stray light suppression of higher wavelengths including in the case of the second diffraction grating.
• a structure depth ratio of the structure depth of the first diffraction grating to the structure depth of the second diffraction grating can be in the range of between 0.9 and 1.1.
• the structure depths of the first and second diffrac tion gratings can be different from one another, but can also be equal.
• a significantly larger structure depth ratio between the two diffraction gratings in the range of between 1.1 and 20 is also possible, for example a structure depth ratio in the region of 10.
• the first grating period can run along a first period running direction of the first diffraction grating and the second grating period can run along a second period running direction of the second diffraction grating, wherein the two period running directions cannot run parallel to one another.
• a smallest angle between the period running directions can be 90°, such that the two period running directions are perpendicular to one another.
• a smaller smallest angle for example in the region of 60°, 55°, 45° or 30°, is also possible.
• optical diffraction component in which the two period running directions of the at least two diffraction structure groups run parallel to one another is also possible.
• the optical diffraction component comprising the two diffraction gratings arranged on the grating surface can comprise at least one further diffraction grating arranged on the grating surface.
• Said further diffraction grating can comprise further diffraction positive structures and further diffraction nega tive structures, wherein a surface area ratio of surface areas of the further diffraction positive structures to surface areas of the further diffraction neg ative structures is in the range of between 0.9 and 1.1.
• Said further diffrac tion grating has a further grating period and a further structure depth, which is measured as optical path difference between the further diffraction posi tive structures and the further diffraction negative structures perpendicular to a surface section of the grating surface that respectively surrounds these further structures.
• Such an optical diffraction component comprising at least one further diffraction grating results in a corresponding further in- crease in the available degrees of freedom of design.
• At least two of the pe riod running directions of the at least three diffraction gratings can have mutually different directions. Alternatively, it is also possible for all the pe riod running directions of the at least three diffraction gratings to run paral lel to one another.
• a ratio between the further grating period and the further structure depth can be greater than 10.
• a period ratio of the first grating period to the further grating period can be in the range of between 0.9 and 1.1.
• the first grating period can run along a first period running direction of the first diffraction grating and the further grating pe- riod can run along a further period running direction of the further diffrac tion grating, wherein the two period running directions do not run parallel to one another.
• the advantages of such an optical diffraction component correspond to those which have already been explained above.
• the grating periods of the first diffraction grating and of the further diffraction grating can be identi cal, but can also be different.
• Corresponding period ratios in the range of between 0.9 and 1.1 or else identical grating periods can also be present be tween the second diffraction grating and the at least one further diffraction grating.
• a structure depth ratio of the first diffraction grating with respect to the further diffraction grating can be in the range of between 0.9 and 1.1; struc ture depths of the first and further diffraction gratings can be different from one another, but can also be equal. Corresponding structure depth ratios in the range of between 0.9 and 1.1 or else identical structure depths can also be present between the second diffraction grating and the at least one fur ther diffraction grating. A significantly greater structure depth ratio be tween the structure depths of the further diffraction grating and the first and/or second diffraction grating in the range of between 1.1 and 20, for example in the region of 10, is also possible.
• a smallest angle between the period running directions of the first diffrac tion grating and the further diffraction grating can be in the range of be tween 20° and 25°. Some other smallest angle e.g. in the range of between 10° and 80° is also possible. Corresponding running direction angles can also be present between a period running direction of the second diffraction grating and the period running direction of the at least one further diffrac tion grating.
• the surface areas of the diffraction positive structures and of the diffraction negative structures of the various diffraction structure groups can make identical contributions to the entire grating surface.
• Such identical surface area contributions yield, in particular, binary gratings for the different dif fraction structure groups of the optical diffraction component. This ensures a high stray light suppression in the region of the zero order of diffraction in the case of appropriate design of the optical diffraction component.
• optical diffraction components of the two aspects can also be combined with one another.
• the optical diffraction component of the type of at least one of the two as pects discussed above can be produced by a mask etching method in which at least one mask structure is used.
• a plurality of mask structures can also be used, which differ in the positions of their mask regions and/or their mask gaps.
• a substrate can then be etched with sequential use of these dif ferent masks or by displacement of one and the same mask structure in at least two sequential etching steps.
• Three or more different mask structures can also be used in such a mask etching method for producing the optical diffraction component.
• the advantages of a collector or a collector mirror which can be used in a projection exposure apparatus, and in particular in an EUV projection ex posure apparatus, and has an optical diffraction component having the properties described above correspond to those which have already been explained above with reference to the optical diffraction component. These advantages are evident particularly in the case of use in association with an EUV light source in which plasma is produced by laser-induced discharge.
• the collector or the collector mirror can be an EUV collector/collector mir ror for a wavelength range of, in particular, between 5 nm and 30 nm and/or a DUV (Deep Ultraviolet) collector/collector mirror, that is to say a collector mirror for a wavelength range of, in particular, between 150 nm and 250 nm.
• an EUV collector mirror in which the collector mirror is embodied in such a way that it guides EUV radiation towards a focal region, wherein the optical diffraction component is embodied in such a way that it guides the radiation of the at least one target wavelength away from the focal region.
• the radiation of the at least one target wave length is also referred to as stray light.
• An illumination system can comprise such a collector, in particular an EUV collector, and an illumination optical unit for illuminating an object field, in which an object to be imaged is arrangeable.
• DUV or EUV used light can be used as illumination light.
• the advantages of such an illumina tion system correspond to those that have already been explained above with reference to the collector according to the invention.
• the used light is precisely not suppressed by the optical diffraction component, that is to say has a different wavelength from that of stray light to be suppressed.
• the illumination system can be fashioned with the optical diffraction com ponent embodied as described above so as to result in a homogeneous dis tribution of the stray light in the region of stray light removal locations and for example in the region of beam dumps provided for this purpose.
• the optical diffraction com ponent embodied as described above so as to result in a homogeneous dis tribution of the stray light in the region of stray light removal locations and for example in the region of beam dumps provided for this purpose.
• An optical system can comprise such an illumination system and a projec tion optical unit for imaging the object field into an image field, wherein a substrate is arrangeable in the image field, and wherein a section of the ob ject to be imaged is able to be imaged onto the substrate.
• a projection ex posure apparatus can comprise such an optical system and a light source, in particular an EUV light source.
• a reticle and a wafer can be provided.
• a structure on the reticle can be projected onto a light-sensitive layer of the wafer with the aid of such a projection exposure apparatus.
• the advantages of such an optical system, of such a projection exposure apparatus, of such a produc tion method and of such a microstructured and/or nanostructured compo nent correspond to those which have already been explained above with reference to the collector according to the invention.
• an EUV light source can comprise a pump light source for producing a plasma that generates EUV wavelengths.
• the pump light source can be embodied for producing a prepulse having a prepulse light wavelength and for producing a main pulse having a main pulse light source.
• the prepulse light wavelength can differ from the main pulse wavelength.
• Corresponding differences between the wavelengths firstly of the prepulse light and secondly of the main pulse light in the case of the pump light source of the EUV light source of the projection exposure appa ratus can have upper and/or lower limit values which have already been ex plained above in association with the target wavelengths li and i.
• a semiconductor component for example a memory chip
• a wave length range of light can be impinged onto a collector so that light having a first wavelength li is diffracted away from a focal region of the collector.
• the first wavelength li may be within the wavelength range and may be in the infrared wavelength range.
• Such wavelength range may comprise radia- tion components comprising at least three different phases which interfere with each other destructively in at least one order of diffraction.
• Such at least one order of diffraction may be a zero order of diffraction of the first wavelength li, a plus first order of diffraction of the first wavelength li or a minus first order of diffraction of the first wavelength li.
• the wavelength range further may comprise a second wavelength " ki and the method may further comprise diffracting light having such second wavelength " ki away from the focal region of the collector.
• the second wavelength " ki may be different form the first wavelength li and may be in the infrared wave length range.
• the wavelength range may comprise radiation components comprising at least three additional different phases interfering with each other destructively in at least one order of diffraction which may be a zero order of diffraction of the second wavelength a plus first order of dif fraction of the second wavelength " ki and a minus first order of diffraction of the second wavelength
• FIG. 1 schematically shows a projection exposure apparatus for EUV microlithography
• Fig. 2 shows details of a light source of the projection expo sure apparatus in the environment of an EUV collector for guiding EUV used light from a plasma source re gion to a field facet mirror of an illumination optical unit of the projection exposure apparatus, with the EUV collector being illustrated in a meridional sec tion;
• Fig. 3 shows, in a more abstract illustration in comparison with Fig. 3, guidance firstly of EUV used light and secondly of wavelength-different stray light compo nents in the case of reflection/diffraction at the EUV collector;
• Fig. 4 shows a plan view of a section of a grating surface of an optical grating comprising two diffraction gratings as diffraction structure groups having mutually perpen dicular period running directions and identical grating periods, wherein structure depths predefining three dif fraction structure levels of diffraction structures which are square in Fig. 4 are illustrated by means of differ ent types of hatching, wherein the optical grating con stitutes one embodiment of an optical diffraction com ponent for suppressing at least one target wavelength by destructive interference;
• Fig. 5 shows, in a diagram, a wavelength-dependent reflec tivity R of the optical grating according to Fig. 4 for a calculated ideal case and for a further, calculated, more realistic case and for a reference grating not according to the invention, wherein the two diffraction gratings of the optical grating are embodied for suppressing two different wavelengths;
• Fig. 6 shows, in a diagram similar to Fig. 5, the relations in the case of an optical grating according to Fig. 4, wherein the two diffraction gratings have identical structure depths, such that the optical grating is em bodied for suppressing exactly one wavelength
• Fig. 7 shows, in an illustration similar to Fig. 4, a further em bodiment of an optical grating comprising two diffrac tion gratings as diffraction structure groups having pe riod running directions which assume an angle of 45° with respect to one another, wherein the optical grating constitutes one embodiment of an optical diffraction component for suppressing at least one target wave length by destructive interference;
• Fig. 8 shows, in an illustration similar to Fig. 4 and Fig. 7, a further embodiment of an optical grating comprising three diffraction gratings as diffraction structure groups, two of which have period running directions which are perpendicular to one another, and a third dif fraction grating of which has a diagonal period running direction relative thereto, wherein the optical grating constitutes one embodiment of an optical diffraction component for suppressing at least one target wave length by destructive interference;
• Fig. 9 shows, in a diagram similar to Fig. 5 and Fig. 6, reflec tion relations in the case of an optical grating accord ing to Fig. 8, in which all three diffraction gratings are embodied for suppressing one and the same wave length;
• Fig. 10 shows, in a diagram similar to Fig. 9, the reflection re lations in the case of an optical grating of the type from Fig. 8, wherein the three diffraction gratings have different structure depths, such that the optical grating is embodied for suppressing different wavelengths;
• Fig. 11 shows, in an illustration similar to Fig. 8, a further em bodiment of an optical grating comprising three dif fraction gratings as diffraction structure groups having respective period running directions which assume in pairs an angle different from zero, wherein the optical grating constitutes one embodiment of an optical dif fraction component for suppressing at least one target wavelength by destructive interference;
• Figs 12 and 13 show, in an illustration similar to Fig. 11, further em bodiments of optical gratings each comprising three diffraction gratings as diffraction structure groups hav ing period running directions corresponding to those of the embodiment according to Fig. 11, wherein the dif fraction structures of the embodiments according to Figs 12 and 13 are arranged in a manner offset with re spect to one another and in relation to the embodiment according to Fig.
• optical gratings constitute fur ther embodiments of optical diffraction components for suppressing at least one target wavelength by de structive interference; shows, in a side view, a first diffraction structure group belonging to a further embodiment of an optical dif fraction component for suppressing at least one target wavelength by destructive interference, embodied as a binary grating having a first grating period and a first structure depth; shows, in an illustration similar to Fig.
• a further diffraction structure group as part of the optical dif fraction component, wherein the further diffraction structure group is in turn embodied as a binary grating having a grating period and a structure depth, wherein a possible overlay error during the production of this diffraction structure group is additionally indicated in a dashed manner;
• Fig. 16 shows the optical diffraction component arising as a superimposition of the two diffraction structure groups according to Figs 14 and 15;
• Figs 17 to 19 show, in illustrations similar to Figs 14 to 16, two dif fraction structure groups and the further optical dif fraction component arising therefrom as a result of su perimposition;
• Figs 20 to 22 show, in illustrations similar to Figs 14 to 16, two dif fraction structure groups and the further optical dif fraction component arising therefrom as a result of su perimposition;
• Fig. 23 shows, in a diagram, a reflectivity of an optical diffrac tion component of the type of that from Fig. 16, 19 or 22, wherein the structure height of the respective first diffraction structure group is fixed at a value for sup pressing a target wavelength and the reflectivity is plotted as a function of the structure height of the other diffraction structure group;
• Fig. 24 shows, once again in a diagram, the reflectivity of the optical diffraction component, once again with a fixed structure depth of the first diffraction structure group, plotted as a function of a difference between the struc ture depths of the two diffraction structure groups and normalized to the structure depth of the first diffraction structure group;
• Fig. 25 shows, in an illustration similar to Fig. 14, a diffraction structure group, embodied as a binary grating having a grating period and a structure depth, as part of a further embodiment of an optical diffraction component for suppressing at least one target wavelength by destruc tive interference, said further embodiment arising as a result of superimposition of three diffraction structure groups;
• Fig. 26 shows a further diffraction structure group, once again embodied as a binary grating, for the embodiment of this variant of the optical diffraction component
• Fig. 27 shows a further diffraction structure group, once again embodied as a binary grating, for the embodiment of this variant of the optical diffraction component
• Fig. 28 shows the optical diffraction component, formed as a superimposition of the three diffraction structure groups according to Figs 25 to 27;
• Figs 29 to 32 show, in an illustration similar to Figs 25 to 28, three diffraction structure groups, once again embodied in each case as a binary grating having a grating period and a structure depth, and a further embodiment of an optical diffraction component for suppressing at least one target wavelength by destructive interference, said further embodiment arising therefrom as a result of su perimposition; shows, in a diagram similar to Figs 9 and 10, wave length-dependent reflection relations in the case of op tical diffraction components of the type of those ac cording to any of Figs 8, 11 to 13, 28 or 32, wherein the diffraction structure groups have different structure depths, such that the optical grating is embodied for suppressing different wavelengths, which however are closer to one another in comparison with the variant according to Fig.
• FIG. 10 shows, in an illustration similar to Fig. 4, a section of a grating surface of an optical grating comprising three diffraction gratings as diffraction structure groups, wherein two of the gratings have parallel period run ning directions and a third grating has a period running direction perpendicular thereto and wherein the dif fraction structure groups having the same period run ning direction are superimposed in the manner of the embodiment according to Figs 16, 19 or 22, wherein structure depths of diffraction structures that are rec tangular in Fig. 34 are illustrated by means of different types of hatching, as a further embodiment of an opti cal diffraction component for suppressing at least one target wavelength by destructive interference;
• Fig. 35 shows a further embodiment of an optical diffraction component for suppressing at least one target wave length by destructive interference, embodied as a three-level grating, embodied for suppressing exactly one target wavelength, once again in a schematic side view;
• Fig. 36 shows, in an illustration similar to Fig. 35, a further embodiment of an optical diffraction component for suppressing at least one target wavelength by destruc tive interference, once again fashioned with three dif fraction structure levels which are assignable to two diffraction structure groups, variables being depicted which are depicted for the theoretical description of a calculation of an efficiency of the suppression of the at least one target wavelength;
• Fig. 37 shows, in an illustration similar to Figs 35 and 36, a further embodiment of an optical diffraction compo nent for suppressing at least one target wavelength by destructive interference, embodied with four diffrac tion structure levels which are assignable to a corre sponding plurality of diffraction structure groups;
• Figs 38 and 39 show, in illustrations similar to Fig. 37, two further embodiments of optical diffraction components for suppressing at least one target wavelength by destruc tive interference, embodied once again with four dif fraction structure levels;
• Fig. 40 shows, in a diagram, a wavelength-dependent reflec tivity of an optical diffraction component comprising two diffraction structure groups of the type for exam ple of the embodiments according to Figs 4, 7, 16, 19, 22, 35, 36, wherein the two diffraction structure groups are embodied with structure depths for suppressing two DUV wavelengths;
• Fig. 41 shows, in an illustration similar to Fig. 40, a wave
• Fig. 42 shows a magnified detail from Fig. 41 in the DUV
• Fig. 43 shows, once again in a diagram, a wavelength-depend ent reflectivity of between 10.0 pm and 11.0 pm for various optical diffraction components having a differ ent sidewall steepness tolerance of the diffraction structure groups;
• Fig. 44 shows the optical diffraction component according to Fig. 16 together with two lithographic mask structures, which can be used in the production of the optical dif fraction component for predefining boundary regions between adjacent surface sections of binary structures of the optical diffraction component, said binary struc tures being superimposed on one another;
• Fig. 45 shows, in an illustration similar to Fig. 44, the optical diffraction component according to Fig. 19 together with two lithographic mask structures, which can be used in the production of the optical diffraction com ponent for predefining once again the boundary re gions between the surface sections of the diffraction structure groups;
• Fig. 46 shows a further embodiment of an optical diffraction component for suppressing at least one target wave length by destructive interference comprising a peri odic grating structure profile comprising diffraction structures having three diffraction structure levels ar ranged in such a way that the target wavelength is sup pressed by destructive interference;
• Fig. 47 shows the optical diffraction component according to
• Fig. 46 wherein the three diffraction structure levels have a height or level difference with respect to one another which leads to perfect destructive interference of the target wavelength in the zero order of diffrac tion;
• Fig. 48 shows, in an illustration similar to Fig. 47, a variant of the optical diffraction component according to Fig. 46, wherein firstly a positive diffraction structure level and secondly a negative diffraction structure level are em bodied with a height difference that is somewhat too large relative to a neutral diffraction structure level, for illustrating a diffraction compensation effect that arises in the case of such a height error;
• Fig. 49 shows, in an illustration similar to Fig. 46, a further embodiment of an optical diffraction component com prising three diffraction structure levels in a different sequence in comparison with the embodiment accord ing to Fig. 46;
• Fig. 50 shows a further embodiment of an optical diffraction component, wherein substantially one grating period is illustrated and wherein a periodic grating structure pro file of the optical diffraction component comprises dif fraction structures having four diffraction structure levels;
• Fig. 51 shows, in an illustration similar to Figure 50, a further embodiment of an optical diffraction component com prising five diffraction structure levels within one grat ing period
• Fig. 52 shows, in a diagram similar to Fig. 5, a wavelength-de pendent reflectivity R of an optical diffraction compo nent in the form of an optical grating, fashioned in the manner of Figs 19, 36, 45 and 46 with three diffraction structure levels which are assignable to two diffraction structure groups, wherein there is a structure depth dif ference between the diffraction structure levels in each case of l/4, wherein l is the target wavelength to be suppressed in each case;
• Fig.53 shows, in an illustration similar to Figs 44 and 45, the optical diffraction component of the type from Figs 19, 36, 45 and 46 together with a further embodiment of two lithographic mask structures, which can be used in the production of the optical diffraction component for predefining once again the boundary regions between the surface sections or the diffraction structure levels of the diffraction structure groups;
• Fig. 54 shows, in an illustration similar to Figs 44 and 45, the optical diffraction component of the type from Figs 19, 36, 45 and 46 together with a further embodiment of two lithographic mask structures, which can be used in the production of the optical diffraction component for predefining once again the boundary regions between the surface sections or the diffraction structure levels of the diffraction structure groups; Fig.
• FIG. 55 shows, in an illustration similar to Figs 44 and 45, a further embodiment of an optical diffraction compo nent of the type from Figs 19, 36, 45 and 46 together with a further embodiment of two lithographic mask structures, which can be used in the production of the optical diffraction component for predefining once again the boundary regions between the surface sec tions or the diffraction structure levels of the diffrac tion structure groups; and
• Fig. 56 shows, in an illustration similar to Figs 44 and 45, a further embodiment of an optical diffraction compo nent of the type from Figs 19, 36, 45 and 46 together with a further embodiment of two lithographic mask structures, which can be used in the production of the optical diffraction component for predefining once again the boundary regions between the surface sec tions or the diffraction structure levels of the diffrac tion structure groups.
• a projection exposure apparatus 1 for microlithography comprises a light source 2 for illumination light or imaging light 3, which will be explained in yet more detail below.
• the light source 2 is an EUV light source, which produces light in a wavelength range of, for example, between 5 nm and 30 nm, in particular between 5 nm and 15 nm.
• the illumination light or imag ing light 3 is also referred to as EUV used light below.
• the light source 2 can be a light source with a wavelength of 13.5 nm or a light source with a wavelength of 6.9 nm.
• a beam path of the illu mination light 3 is illustrated extremely schematically in Fig. 1.
• An illumination optical unit 6 serves to guide the illumination light 3 from the light source 2 to an object field 4 in an object plane 5.
• Said illumination optical unit comprises a field facet mirror FF illustrated highly schemati cally in Fig. 1 and a pupil facet mirror PF disposed downstream in the beam path of the illumination light 3 and likewise illustrated highly very schematically.
• a field-forming mirror 6b for grazing incidence (GI mirror; grazing incidence mirror) is arranged in the beam path of the illumination light 3 between the pupil facet mirror PF, which is arranged in a pupil plane 6a of the illumination optical unit, and the object field 4.
• GI mirror grazing incidence mirror
• Pupil facets (not illustrated in any more detail) of the pupil facet mirror PF are part of a transfer optical unit, which transfer, and in particular image, field facets (likewise not illustrated) of the field facet mirror FF into the ob ject field 4 in a manner being superimposed on one another.
• An embodi ment known from the prior art can be used for the field facet mirror FF on the one hand and the pupil facet mirror PF on the other hand.
• such an illumination optical unit is known from DE 10 2009 045 096 Al.
• the object field 4 is imaged into an image field 8 in an image plane 9 with a predetermined reduction scale.
• Projection optical units which may be used to this end are known from e.g. DE 10 2012 202 675 Al.
• a Cartesian xyz-coordinate system is indicated in the drawing, from which system the respective positional relationship of the components illustrated in the fig ures is evident.
• the x-direction runs perpendicular to the plane of the drawing into the latter.
• the y-direction extends towards the left in Fig.
• the object plane 5 runs paral lel to the xy-plane.
• the object field 4 and the image field 8 are rectangular. Alternatively, it is also possible for the object field 4 and the image field 8 to have a bent or curved embodiment, that is to say, in particular, a partial ring shape.
• the object field 4 and the image field 8 have an x/y-aspect ratio of greater than 1. Therefore, the object field 4 has a longer object field dimension in the x- direction and a shorter object field dimension in the y-direction. These ob ject field dimensions extend along the field coordinates x and y.
• the projection optical unit 7 What is imaged in this case is a portion of a reflection mask 10, also referred to as reticle, coinciding with the object field 4.
• the reticle 10 is carried by a reticle holder 10a.
• the reticle holder 10a is displaced by a reticle displacement drive 10b.
• the imaging by way of the projection optical unit 7 is implemented on the surface of a substrate 11 in the form of a wafer, which is carried by a sub strate holder 12.
• the substrate holder 12 is displaced by a wafer or sub strate displacement drive 12a.
• Fig. 1 schematically illustrates, between the reticle 10 and the projection optical unit 7, a ray beam 13 of the illumination light 3 that enters into said projection optical unit and, between the projection optical unit 7 and the substrate 11, a ray beam 14 of the illumination light 3 that emerges from the projection optical unit 7.
• An image field-side numerical aperture (NA) of the projection optical unit 7 is not reproduced to scale in Fig. 1.
• the projection exposure apparatus 1 is of the scanner type. Both the reticle 10 and the substrate 11 are scanned in the y-direction during the operation of the projection exposure apparatus 1.
• Fig. 2 shows details of the light source 2.
• the light source 2 is an LPP (laser produced plasma) source.
• LPP laser produced plasma
• tin droplets 15 are generated as a continuous droplet sequence by a tin droplet generator 16.
• a trajectory of the tin drop lets 15 extends transversely to a principal ray direction 17 of the EUV used light 3.
• the tin droplets 15 drop freely between the tin droplet genera tor 16 and a tin capturing device 18, with said droplets passing through a plasma source region 19.
• the EUV used light 3 is emitted by the plasma source region 19.
• the tin droplet 15 arrives in the plasma source re gion 19, it is impinged upon there by pump light 20 from a pump light source 21.
• the pump light source 21 can be an infrared laser source in the form of e.g. a CO2 laser. Some other IR laser source is also possible, in par ticular a solid-state laser, for example an Nd: YAG laser.
• the pump light source 21 can comprise a light source unit for producing a light prepulse and a light source unit for producing a main light pulse.
• the light prepulse, on the one hand, and the main light pulse, on the other hand, can have dif ferent light wavelengths.
• the pump light 20 is transferred into the plasma source region 19 by way of a mirror 22, which can be a mirror that is tiltable in a controlled fashion, and by way of a focusing lens element 23.
• a plasma emitting the EUV used light 3 is produced by the pump light impingement from the tin drop let 15 arriving in the plasma source region 19.
• a beam path of the EUV used light 3 is illustrated in Fig. 2 between the plasma source region 19 and the field facet mirror FF, to the extent that the EUV used light is reflected by a collector mirror 24, which is also referred to as EUV collector 24 be low.
• the EUV collector 24 comprises a central passage opening 25 for the pump light 20 focussed towards the plasma source region 19 by way of the focusing lens element 23.
• the collector 24 is embodied as an ellipsoid mir ror and transfers the EUV used light 3 emitted by the plasma source region 19, which is arranged at one ellipsoid focus, to an intermediate focus 26 of the EUV used light 3, which is arranged at the other ellipsoid focus of the collector 24.
• the field facet mirror FF is disposed downstream of the intermediate focus 26 in the beam path of the EUV used light 3, in the region of a far field of the EUV used light 3.
• the EUV collector 24 and further components of the light source 2, which may be the tin droplet generator 16, the tin capturing device 18 and the fo cusing lens element 23, are arranged in a vacuum housing 27.
• the vacuum housing 27 has a passage opening 28 in the region of the intermediate focus 26.
• the latter comprises a pump light entrance window 29 for the light prepulse and for the main light pulse.
• Fig. 3 shows highly abstractly guidance firstly of EUV used light, that is to say the illumination light 3, and secondly of stray light 30, in particular of radiation of longer wavelength, for example IR radiation having the wave lengths of the light prepulse and/or of the main light pulse, between the plasma source region 19 of the light source 2 and an intermediate focal plane 26a, in which the intermediate focus 26 is arranged.
• Fig. 3 shows a variant of lateral guidance of the pump light 20 to the plasma source region 19, that is to say guidance which does not require a passage opening of the type of the passage opening 25 in the EUV collector 24. Both the used light 3 and the stray light 30 emanate from the plasma source region 19.
• Both the used light 3 and the stray light 30 are incident on surface sections 31, 32 of an entire impingement surface 33 of the EUV collector 24.
• the surface sections 31, 32 are sections of a grating surface - likewise designated by 33 in the drawing - of the EUV collector 24, an op tical grating for diffractively dumping the stray light radiation 30 being ar ranged on said grating surface.
• Embodiments of the optical grating are de- scribed below.
• the grating surface can be arranged exclusively at the loca tion of the surface sections 31, 32 on which the stray light 30 impinges, or can alternatively also cover larger sections of the impingement surface 33, and cover the entire impingement surface 33 in a further variant.
• Fig. 4 shows a section of the grating surface 33 with one embodiment of an optical grating 34.
• the optical grating 34 constitutes an optical diffraction component for suppressing at least one target wavelength by destructive in terference.
• the grating surface of the optical grating 34 can be embodied as plane or else curved, e.g. concave like the impingement surface 33 in the case of the collector mirror 24 according to Figs 2 and 3, or else convex.
• the optical grating 34 has, as diffraction structure groups, two diffraction gratings 35, 36 arranged on the grating surface 33.
• the diffraction grating 35 is also referred to hereinafter as first diffraction grating.
• the diffraction grating 36 is also referred to hereinafter as second diffraction grating.
• diffraction positive structures 37 and diffraction negative structures 38 run alternately in each case horizon tally in Fig. 4.
• a period running direction 39 of this first diffraction grating 35 runs perpendicularly. For this horizontal course of the diffraction struc tures 37, 38, the period running direction 39 thus runs vertically in Fig. 4.
• the second diffraction grating 36 has vertically running diffrac tion positive structures 40 and diffraction negative structures 41 respec tively alternating therewith.
• a period running direction 42 of the second diffraction grating 36 once again runs perpendicularly to the diffraction structures 40, 41, that is to say horizontally, in Fig. 4.
• the diffraction structures 37, 38 and 40, 41 of the two diffraction gratings 35, 36 of the optical grating 34 are realized by four diffraction structure types or diffraction structure levels, which differ in their structure depth and are illustrated in Fig. 4 by different types of hatching and by numerals 1, 2, 3, 4 applied to the respective diffraction structure.
• the diffraction structure type“1” has the structure depth 0.
• the diffraction structure type “2” has the structure depth“dv”. That surface section of the grating surface which is occupied by the respective diffraction structure type“2” is thus at a location deeper than the diffraction structure type“1” by the structure depth dv perpendicularly to the plane of the drawing in Fig. 4.
• the respective areas of the diffraction structure types“1” to“4” are square in each case.
• Other boundary shapes of the diffraction structure types which result in complete coverage of the grating surface are also possible.
• the diffraction structure type“3” has a structure depth dh, once again measured relative to the diffraction structure type“1” perpendicularly to the plane of the drawing in Fig. 4.
• the diffraction structure type“4” has a correspondingly measured structure depth dv + dh.
• the four diffraction structure types“1” to“4” are respectively arranged in a 2 x 2 array, wherein the diffraction structure type“1” is arranged at the top left, the diffraction structure type “2” is arranged at the top right, the diffraction structure type“3” is ar ranged at the bottom left and the diffraction structure type“4” is arranged at the bottom right.
• These 2 x 2 arrays of such groups of the 4 diffraction structure types in each case are in turn arranged in a superstructure in the form of a 3 x 3 array in the embodiment according to Fig. 4.
• the optical grating 34 on the grating surface 33 can, of course, be extended in any desired way horizontally and vertically by attachments of further corre sponding 2 x 2 arrays of the four diffraction structure types“1” to“4”.
• Diffraction positive structures 37 and diffraction negative structures 38 sit uated at a position deeper by the structure depth dh in comparison there with thus succeed one another in the period running direction 39 of the first diffraction grating 35.
• the second diffraction grating 36 one of the diffraction positive structures 40 is respectively followed, in the pe riod running direction 42, by a diffraction negative structure 41 situated at a position deeper by the structure depth dv.
• Two diffraction gratings 35, 36 being superimposed on one another and having respective structure depths dh and dv are thus realized in the optical grating 34.
• the structure depth is the height difference between the respective diffraction positive structures and the associated diffraction negative structures. More generally, the structure depth can be understood as an optical path difference between the diffrac tion positive structures and the associated diffraction negative structures.
• the structure depth can be understood as an optical path difference between the diffrac tion positive structures and the associated diffraction negative structures.
• the auxiliary layer which is arranged below the highly reflective coating, can be a layer that increases a lifetime of the optical grating 34. Alterna tively or additionally, an auxiliary layer can also be applied on the highly reflective coating in order to protect the latter against damage.
• the highly reflective coating can be a multilayer, such as is known for the highly effective reflection of, in particular, radiation having EUV wave lengths.
• the diffraction gratings 35, 36 of the optical grating 34 are embodied in each case as a binary grating.
• the surface area of the diffraction posi tive structures is equal to the surface area of the diffraction negative struc tures.
• a grating period of the diffraction grating 35 can be in the range of be tween 0.5 mm and 5 mm, and for example 2 mm.
• a grating period of the diffraction grating 36 can be in the range of between 0.5 mm and 5 mm, and for example 2 mm.
• Such a grating period is designated by P for the second diffraction grating 36 in Fig. 4.
• a structure sidewall of the respec tive diffraction structures 37, 38, 40, 41 can have an extent in the range of between 1 pm and 10 pm, and for example in the region of 5 pm, perpen dicularly to the extension of the respective diffraction structure, that is to say measured in the respective period running direction 39 to 42.
• Such a sidewall extent or sidewall extension is indicated at F with a greatly exag gerated size for the second diffraction grating 36 in Fig. 4.
• a reflectivity of the optical grating 34 is plotted at 43, said reflectivity resulting as the result of a calculation in which it is additionally assumed that the sidewall extension F is 0, that is to say the re sult in the case of an optical grating 34 having ideally steep sidewalls be tween the diffraction structures.
• the result is a reflec tivity suppression of the optical grating 34 in the ideal case of the reflectiv ity curve 43 of better than 10 8 .
• These two wavelengths correspond to the wavelengths of the prepulse and of the main pulse of the pump light source 21.
• This normalized target wavelength ratio can also be less than 20%.
• a reflectivity curve R (l) taking account of specific tolerances as far as firstly the accuracy of the production of the structure depths dv and dh and also the sidewall steepness are concerned is plotted at 44 in Fig. 5.
• the result is a reflec tivity suppression that is better than 10 6 .
• a reference reflectivity curve 45 is also entered in Fig. 5 for comparison purposes, said reference reflectivity curve representing the suppression re sult for an optical reference grating comprising exactly one diffraction grating, that is to say e.g. either the diffraction grating 35 having the horizontal diffraction structures or the diffraction grating 36 having the vertical dif fraction structures.
• the same tolerances for the structure depth production and for the sidewall steepness as in the case of the reflectivity curve 44 are taken into account here. It is evident that, despite the same tolerances, the reference reflectivity curve 45 exhibits a significantly lower optimum re flectivity suppression in the region of 10 4 . Since the reference grating for which the reference reflectivity curve 45 was calculated comprises moreo ver just one diffraction grating, only exactly one wavelength is also sup pressed here, namely 10.6 pm.
• the two diffraction gratings 35, 36 have a ratio between a grating period (2 mm) and a structure depth (in the region of 2.6 pm) which is signifi cantly greater than 10 and is actually greater than 500 and is in the region of 1000.
• a surface area ratio of the surface areas of the diffraction positive structures 37, 40 to surface areas of the diffraction negative struc tures 38, 41 is 1.
• said surface area ratio can also deviate from 1 and can be in the range of between 0.9 and 1.1.
• the two diffraction gratings 35, 36 have the same grating period p, and so a period ratio of the two grating periods is 1.
• the period ratio can be in the range of be tween 0.9 and 1.1.
• the differences between the two grating periods can also be significantly greater, such that for example a period ratio of 1:2 or of 1:5 results.
• the optical grating 34 constitutes an optical diffraction component for sup pressing at least one target wavelength li, " ki by destructive interference comprising at least three diffraction structure levels corresponding to the diffraction structure types 1 to 4.
• Said diffraction structure levels Ni to N 4 predefine different structure depths di relative to a reference plane.
• the diffraction structure levels Ni to N 4 can be assigned to the two diffraction gratings, that is to say two diffraction structure groups 35, 36, which in turn serve for suppressing respectively one of the two target wavelengths li, i.
• the first of said diffraction structure groups that is to say the diffraction grating 35, serves for suppressing the first target wavelength li in the zero order of diffraction and the second of the diffraction structure groups, that is to say the diffraction grating 36, serves for suppressing the second target wavelength " ki in the zero order of diffraction.
• the topography of the diffraction structure levels Ni to N 4 can be described as a superimposition of the two binary diffraction structure groups 35 and 36.
• Each of these two binary diffraction structure groups has first surface sections having a first structure depth and second surface sections having a second structure depth, which alternate with the first surface sections along a running direction of the respective diffraction structure group 35, 36.
• Boundary regions between these adjacent surface sections of each of the bi nary diffraction structure groups have a linear course.
• said linear course corresponds to the rows and columns of the diffraction structure type arrangement resembling a checkerboard in Fig. 4.
• First boundary regions of the first of the two bi nary diffraction structure groups 35, that is to say the row lines in Fig. 4, and second boundary regions of the second of the two binary diffraction structure groups 36, that is to say the column lines in Fig. 4, are superim posed on one another at most along sections of their linear course, namely in the region of the points of intersection between the row and column lines in the illustration according to Fig. 4.
• the diffraction grating 35 has a first grating period having a first structure depth, measured as optical path difference between first diffraction positive structures 37 and first diffraction negative structures 38 perpendicular to a surface section of the grating surface 33 that respectively surrounds these first structures.
• the second diffraction grating 36 has a second grating pe riod and a second structure depth, which is in turn embodied as optical path difference between the second diffraction positive structures 40 and second diffraction negative structures 41 perpendicular to a surface section of the grating surface 33 that respectively surrounds these second structures.
• the two period running directions along which the two grating periods of these gratings 35, 36 run are perpendicular to one another, that is to say do not run parallel to one another.
• the collector mirror of the EUV col lector 24 is embodied such that it guides the EUV radiation 3 through to wards the focal region 26, wherein the grating 34 is embodied as an optical diffraction component such that the optical diffraction component guides the radiation 30 of the at least one target wavelength, that is to say the stray light, away from the focal region 26.
• Fig. 6 shows, in an illustration similar to Fig. 5, reflectivity relations in a variant of the optical grating 34 in which the structure depths dv, dh are equal in magnitude and have an absolute value of 2.65 pm. Both diffraction gratings 35, 36 then contribute to suppressing the stray light wavelength of 10.6 pm. Accordingly, once again better suppression relations arise in the case of the ideal reflectivity curve 43 and in the case of the reflectivity curve 44 calculated with the design tolerances.
• Fig. 7 shows, in an illustration similar to Fig. 4, a variant of the optical grating which can be used instead of the optical grating 34 according to Fig. 4 as an optical diffraction component for suppressing at least one tar get wavelength by destructive interference.
• Components and functions cor responding to those which have already been explained above with refer ence to Fig. 4 bear the same reference signs and will not be discussed in detail again.
• the optical grating 46 according to Fig. 7 differs from that from Fig. 4 pre liminary in that a period running direction 39 of the first diffraction grating 35 does not run vertically, but rather at an angle of 45° with respect to the horizontal. Accordingly, the diffraction structure types“1” to“4” arise with rhombic areas.
• Fig. 8 shows a further embodiment of an optical grating 47 which can be used as an alternative or in addition to the above-described optical gratings as an optical diffraction component for suppressing at least one target wavelength by destructive interference.
• the optical grating 47 has a total of three diffraction gratings as diffraction structure groups, wherein two of these three diffraction gratings correspond to the diffraction gratings 35 and 36 of the embodiment according to Fig. 4.
• a grating period of the diffraction grating 35 is illustrated at ph, and a grating period of the diffraction grating 36 at pv.
• a third diffraction grating 48 of the optical grating 47 has diffraction posi tive structures 49 and diffractive negative structures 50 running diagonally with respect to the diffraction structures 37, 38 and 40, 41 of the first two diffraction gratings 35, 36.
• the diffraction negative structures 50 have a structure depth illustrated by dd in Fig. 8.
• An overall height profile over the entire illustrated section of the grating surface of the optical grating 47 can be understood as a juxtaposition of basic sections in the form of 2 x 4 arrays, which are predefined by the boundaries of the horizontally running diffraction structures 37, 38 of the diffraction grating 35 and the vertically running diffraction structures 40,
• Diffraction structure types or diffraction structure levels on this 2 x 4 array are designated by“000”,“001”,“010”, “Oi l”,“100”,“101”,“110” and“111” on the 2 x 4 array arranged at the top left in Fig. 8.
• the table below indicates the structure depths of these diffraction structure types and also the surface area proportions thereof in units of the grating periods ph, pv:
• All diffraction structure types“000” to“111” have the same surface area proportion (ph + pv) / 4 of the total surface area of the optical grating 47. This ensures that all three diffraction gratings 35, 36 and 48 of the optical grating 47 constitute binary gratings and the diffraction positive structures 37, 40, 49 thereof have a surface area ratio of 1 in each case with respect to the diffraction negative structures 38, 41, 50 thereof
• a period running direction 51 of the third diffraction grating 48 runs along a grating period pd at an angle of approximately 23° with respect to the pe riod running direction 39 of the diffraction grating 35.
• This period running direction 51 is chosen together with an offset of an arrangement of the dif fraction structures 49, 50 of the third diffraction grating 48 such that boundaries between the diffraction structures 49, 50 of the third diffraction grating 48 run along diagonals of two structure zones lying horizontally next to one another, which are formed by the diffraction structures 37, 38, firstly, and 40, 41, secondly, that intersect one another.
• An offset variation of this arrangement of the diffraction structures 49, 50 along the period running direction 51 of the third diffraction grating 48 is possible, as indi cated by a double-headed arrow 52 in Fig. 8.
• the grating period pd of the third diffraction grating 48 is of the order of magnitude of the grating periods ph, pv and is approximately 1.7 mm in the case of the optical grating 47.
• Fig. 9 shows, in an illustration similar to Figs 5 and 6, data concerning the wavelength-dependent reflectivity R for the case where the structure depths dh, dv and dd are each equal in magnitude and have the value 2.65 pm in the example described.
• a reflectivity for the ideal case of preferably steep sidewalls (sidewall ex tension 0) for the diffraction gratings 35, 36 and 48 is illustrated at 53 in Fig. 9.
• a reflectivity suppression of a target wavelength of 10.6 pm is bet ter than 10 10 by orders of magnitude.
• Fig. 9 also depicts the reflectivity curves 44 and 45 in accordance with Fig. 6 firstly for the optical grating 34 comprising the two diffraction gratings 35, 36 and for the conventional optical grating comprising exactly one diffraction grating.
• the structure depth dd of the diagonally running diffraction structures 49, 50 is thus smaller than the structure depths of the diffraction structures 37, 38, 40, 41 of the diffraction gratings 35, 36 of the optical grating 47 by ap proximately a factor of 10.
• the reflectivity once again for an ideal design of such an optical grating 47 with a sidewall extension 0 is illustrated at 55 in Fig. 10.
• a reflectivity suppression of the optical grating is in each case in the region of 10 8 or better.
• a diffraction grating 48 having a fur ther grating period pd and a further structure depth dd is thus present, said structure depth being measured as optical path difference between the dif fraction positive structures 49 and the diffraction negative structures 50 perpendicular to a surface section of the grating surface 33 that respectively surrounds these two structures 49, 50.
• the ratio pd/dd between the grating period pd of the diffraction grating 48 and the structure depth dd of the dif fraction grating 48 is greater than 10.
• the pe riod ratio ph/pd can be in the range of between 0.9 and 1.1.
• the first grating period ph can run along the first period run ning direction 39 of the first diffraction grating 35 and the further grating period pd can run along the further period running direction 51 of the fur ther diffraction grating 48 and the two period running directions 39, 51 run parallel to one another.
• the surface areas of the diffraction positive structures 37, 40, 49 and of the diffraction negative structures 38, 41, 50 of the various diffraction structure groups 35, 46, 48 make identical contributions to the entire grating surface 33.
• FIG. 11 A further embodiment of an optical grating 57, once again comprising three diffraction gratings 35, 36, 48, is described below with reference to Fig. 11.
• the optical grating 57 differs from the optical grating 47 primarily in the orientation of the three period running directions 39, 42 and 51 of the three diffraction gratings 35, 36 and 48 placed one above another.
• the period running direction 39 of the first diffraction grating 35 runs at an angle of approximately 23° with respect to the vertical in Fig. 11.
• the period run ning direction 42 of the second diffraction grating 36 runs horizontally.
• the period running direction 51 of the third diffraction grating 48 runs in turn at an angle of approximately 23° with respect to the vertical, wherein the two period running directions 39 and 51 firstly of the first diffraction grating 35 and secondly of the third diffraction grating 48 assume an angle of approximately 46° with respect to one another.
• Fig. 11 highlights a rhombic basic section of the optical grating 57 corre sponding to the 2 x 4 array of the optical grating 47 once again with dif fraction structure types“000” to“111”.
• An assignment of the structure depths and also of the surface area proportions in the case of these diffrac tion structure types“000” to“111” of the optical grating 57 is just like as indicated above in Table 1 concerning Fig. 8.
• an offset of structure boundaries of the third diffraction grating 48 along the period running direction 51 is such that structure boundaries between the diffraction structures 37, 38 of the first diffraction grating 35, between the diffraction structures 40, 41 of the second diffraction grating 36 and between the diffraction structures 49, 50 of the third diffraction grating 48 intersect in each case at a point P in the centre of the basic section illustrated in Fig. 11.
• the grating period ph is approximately 3.25 mm
• the grating period pv is 2 mm
• the grating period pd is of ex actly the same magnitude as the grating period ph.
• Figs 12 and 13 show further embodiments of optical gratings 58, 59, which differ from the optical grating 57 merely in the size of the offset of the ar rangement of the structure boundaries between the diffraction structures 49, 50 along the period running direction 5 L
• said offset is such that the structure boundaries of the various diffraction gratings 35, 36, 48 do not intersect at a point in the respective basic section.
• the offset is such that the structure boundaries of the three dif fraction gratings 35, 36, 48 intersect at different positions within the re spective basic section in comparison with the embodiment according to Fig. 11, thus resulting in turn in a different distribution of the diffraction structure types“000” to“111”.
• an optical grating 60 as an optical diffraction component for suppressing at least one target wavelength by destructive in terference is explained below with reference to Figs 14 to 16.
• Components and functions corresponding to those which were already explained above with reference to Figures 1 to 13 are denoted by the same reference signs and are not discussed in detail again.
• the optical grating 60 is embodied as a superimposition of two diffraction gratings 61, 62, which are illustrated individually in Fig. 14 (diffraction grating 61) and Fig. 15 (diffraction grating 62).
• the diffraction gratings 61, 62 constitute diffraction structure groups for suppressing a respective target wavelength.
• the diffraction grating 61 has a structure depth di and a grating period pi.
• the diffraction grating 62 has a structure depth d2 and a grating period p2.
• the two diffraction gratings 61, 62 are embodied in each case as a binary grating.
• the optical grating 60 resulting from the superimposition of the two dif fraction gratings 61, 62 has a total of three diffraction structure levels or diffraction structure types having structure depths 0 (diffraction structure level Ni), structure depth d2 (diffraction structure level N 2 ), having struc ture depth di (diffraction structure level N 3 ) and having structure depth di + d2 (diffraction structure level N 4 ).
• the grating periods pi and p2 are identical in the case of the optical grating 60.
• the structure depths di, d2 are different in the case of the optical grating 60.
• An overlay error 63 along the period running direction x is illustrated in a dashed manner in Figs 15 and 16.
• Such an overlay error 63 can be under stood as a phase error of the superimposition of the two diffraction gratings 61, 62 along the period running direction and leads to a change of exten sions of the various diffraction structure levels Ni, N2, N3, N4 along the pe riod running direction pixel x.
• the two diffraction structure levels N2, N3 degenerate into a common structure level, with the result that such an optical grating consisting of two diffraction gratings having identi cal structure depths has exactly three diffraction structure levels.
• the surface sections of the diffraction structure groups are designated by 61p and 6 IN.
• Boundary regions of the first 61 of the two binary diffraction structure groups 61, 62 of the optical grating 60, that is to say the sidewalls between the levels Ni of the diffrac tion structure group 61, and boundary regions of the second 62 of the two binary diffraction structure groups 61, 62, that is to say the level sidewalls Ni/N j in Fig. 15, run completely separately from one another.
• FIG. 19 shows an optical grating 64 that results as a superimposition of two diffraction structure groups in the form once again of diffraction gratings 65 (Fig. 17) and 66 (Fig. 18).
• the optical grating 64 is an example of an optical diffraction component.
• the extensions of the diffraction positive structures 67, 68, firstly, and of the diffraction negative structures 69, 70, secondly, are thus not identical in the respective diffraction grating 65, 66, and so in this sense the two diffraction gratings 65, 66 are not binary gratings.
• the exten- sion ratio can deviate very significantly from 1 : 1 and is approximately 1:3 in the case of the diffraction gratings 65, 66.
• a different extension ratio be tween the diffraction positive structures 67, 68, firstly, and the diffraction negative structures 69, 70, secondly, of the respective diffraction grating 65, 66 in the range of between 10: 1 and 1: 10 is also possible.
• the optical grating 64 thus constitutes an optical diffraction component comprising a periodic grating structure profile comprising diffraction struc tures, having three diffraction structure levels (Ni to N 3 ), which predefine different structure depths di relative to a reference plane.
• the arrangement of the diffraction structures is such that a wavelength range around a first target wavelength li in the infrared wavelength range, which first target wavelength is dif fracted by the grating structure profile, has radiation components having at least three different phases which interfere with one another destructively at least in the zero and/or +/- first order(s) of diffraction of the first target wavelength li.
• the diffraction structure levels Ni to N 3 predefine a topography of a grat ing period of the grating structure profile that is repeated regularly along a period running direction x.
• the diffraction structure levels Ni to N 3 include the neutral diffraction structure level N2 having a reference height of 0, the positive diffraction structure level Ni, which is arranged higher by an opti cal path length of li/4 relative to the neutral diffraction structure level N 2 , wherein a tolerance of +/- 20% is possible for said optical path length, and the negative diffraction structure level N 3 which is arranged lower by an optical path length of li/4 +/- 20% relative to the neutral diffraction struc ture level N2.
• the grating period of the grating structure profile of the optical grating 64 is subdivided into four period sections of the diffraction structure levels Ni to N3, wherein two of the four period sections, namely the two sections having the diffraction structure level N2, are embodied as neutral diffrac tion structure sections, one of the four period sections, namely the period section having the diffraction structure level Ni, is embodied as a positive diffraction structure section and one of the four period sections, namely the period section having the diffraction structure level N3, is embodied as a negative diffraction structure section.
• an optical grating 60 as an optical diffraction component for suppressing at least one target wavelength by destructive in terference is explained below with reference to Figs 20 to 22.
• Fig. 22 shows an optical grating 71 that results as a superimposition of two diffraction gratings 72 (Fig. 20) and 73 (Fig. 21).
• the diffraction grating 72 has a structure depth di and a grating period pi.
• the diffraction grating 73 has a structure depth d 2 and a grating period.
• Both diffraction gratings 72, 73 are embodied as binary gratings having an identical extension of the diffraction positive structures and of the diffrac tive negative structures along the period running direction x.
• the optical grating 71 has four diffraction structure levels, namely Ni (structure depth 0), N 2 (structure depth d 2 ), N 3 (structure depth di) and N 4 (structure depth di + d 2 ).
• Figs 21 and 22 once again illustrate in a dashed manner an overlay error 63 on account of a phase offset of the two diffraction gratings 72, 73 along the period running direction x.
• the overlay errors 63 as far as the relative ex tensions of the diffraction structure levels N and N 2 are concerned, indeed stand out such that, as viewed in each case over a period p 2 of the optical grating 71, the ratio of extensions of the diffraction structure levels Ni and N 2 does not change independently of the size of the overlay error 63.
• phase rela tionship between the two diffraction gratings 72, 73 along the period run ning direction x is such that sidewalls F of the diffraction gratings 72, 73 are not superimposed at the same location along the period running direc tion x.
• FIG. 23 shows, for an optical grating of the type of that of the optical grat ings 60, 64 or 71 described above with reference to Figs 14 to 22, the de pendence of a reflectivity R of the optical grating, the respective first dif- fraction grating having a structure depth di being designed for suppressing a target wavelength of 10.6 pm by destructive interference, on the structure depth d2 of the respective second diffraction grating from which this optical grating is constructed.
• the maximum suppression of the target wavelength (reflectivity less than 10 8 ) results for a structure depth d2 of 2.65 pm, that is to say at approximately one quarter of the target wavelength.
• the suppressions are mutually reinforced in the case of the two target wavelengths li, i.
• FIG. 28 shows an optical grating 76 that results as a superimposition of three diffraction gratings 77 (Fig. 25), 78 (Fig. 26) and 79 (Fig. 27).
• di, d2, d3 of these three diffraction gratings 77 to 79 it holds true that: di > d2 > d3.
• the three diffraction gratings 77 to 79 are embodied in each case as a bi- nary grating.
• the result is an optical diffraction component with which, in principle, three different target wavelengths can be suppressed by destructive inter ference and which comprises three diffraction structure groups with the three diffraction gratings 77 to 79.
• the opti cal grating 76 is not sensitive to an overlay error, that is to say in relation to a possible phase offset of the diffraction structures of the three diffraction gratings 77 to 79 along the period running direction x.
• the optical grating 76 has the following eight diffraction structure levels: Ni (structure depth 0), N 2 (structure depth d3), N 3 (structure depth d2), N 4 (structure depth di), N5 (structure depth d2 + d3), Ne (structure depth d3 + di), N 7 (structure depth di + d2) and Ns (structure depth di + d2 + d3). These diffraction structure levels can be assigned to the three diffraction structure groups of the three diffraction gratings 77 to 79.
• an optical grating 60 as an optical diffraction component for suppressing at least one target wavelength by destructive in terference is explained below with reference to Figs 29 to 32.
• Fig. 32 shows an optical grating 80 that results from the superimposition of three binary diffraction gratings 81 (Fig. 29), 82 (Fig. 30) and 83 (Fig. 31).
• di binary diffraction gratings 81
• 82 Fig. 30
• 83 Fig. 31
• di binary diffraction gratings 81
• d3 binary diffraction gratings 81 to 83
• the optical grating 80 also has correspondingly eight different diffraction structure levels which can be assigned to the three diffraction structure groups of the three diffraction gratings 81 to 83.
• Fig. 33 shows, in an illustration similar to Figs 5 and 10, for example, the suppression effect of an optical grating of the type of the embodiments ac cording to Figs 28 and 32, comprising three diffraction structure groups for suppressing three different target wavelengths.
• a suppression of better than 10 11 results for the three target wavelengths.
• a reflectivity curve that in turn takes account of structure depth and/or sidewall steepness tolerances is plotted at 85 in Fig. 33. In the case of the reflectivity curve 85, a suppression of better than 10 9 results for the mar ginal target wavelengths 10.2 pm and 10.6 pm and a suppression in the re gion of 10 10 results for the central target wavelength 10.40 pm.
• the reflectivity curves 44 and 45 for an optical grating comprising exactly two diffraction gratings and for an optical grating comprising exactly one diffraction grating are depicted as references in Fig. 33.
• Fig. 34 shows a further embodiment of an optical grating 86 as an optical diffraction component for suppressing at least one target wavelength by de structive interference.
• the optical grating 86 results as a superimposition of a total of three dif fraction gratings 87, 88, 89. Two of these diffraction gratings, namely the diffraction gratings 87 and 88, have a period running direction x that runs horizontally in Fig. 34.
• the third diffraction grating 89 has a period run ning direction y that runs vertically in Fig. 34.
• diffraction structure types that is to say different diffraction structure levels, are highlighted by different hatchings. If the three diffraction gratings 87 to 89 have three dif ferent structure depths di, d2 and d 3 , the result is once again eight different diffraction structure levels, corresponding to the eight different
• a suppression of the respective target wavelength is independent of overlay errors.
• the target wavelength to be suppressed has a wavelength of N .
• the diffraction structure level Ni has a structure depth of 0.
• the diffraction structure level N 2 has a structure depth d of k / 6.
• a superimposition of a total of n diffraction gratings having structure depths di, d 2 , ... d n is suitable for suppressing a total of n target wave lengths li, l 2 , ... l h .
• the number of possible diffraction struc ture levels is 2 n .
• eight diffraction structure levels Ni to Ns result.
• the various diffraction structure levels Ni are arranged such that all the dif fraction structure levels Ni occupy identical surface area proportions of the total surface area of the diffraction component 91.
• the optical diffraction component 91 constitutes as a variant a so-called m- level grating having in this case three levels.
• the three-level grating according to Fig. 35 is assigned a grating period p, according to which the sequence of the three diffraction structure levels Ni, N 2 , N 3 is repeated identically. Fig.
• FIG. 36 shows a further embodiment of an optical diffraction component 92 for suppressing at least one target wavelength by destructive interference.
• the illustration shows the diffraction structure levels Ni in the region around a deepest diffraction structure level N n , namely the diffraction structure levels N n - 2 , N n -i, N n , N n+i , N n+2 .
• An intensity of reflected light in the zero order of diffraction can be written as follows, proceeding from the Fraunhofer approximation for the dif fracted far field, in a simplified manner for an N-level, periodic phase grat ing:
• 1(0) is the intensity in the zero order of diffraction, that is to say the square of the absolute value of the field amplitude of the diffracted far field.
• N is the number of levels of the phase grating.
• L n is a phase term, assigned to the respective grating level. This phase term L n , which corresponds to the extension of the respective diffraction structure level Ni along the pe- riod running direction x, is illustrated in Fig. 36.
• h n is a measure of the structure depth of the respective diffraction structure level (cf. Fig. 36).
• l is the wavelength of the diffracted light.
• Fig. 37 shows a further embodiment of a stepped grating having identical structure depths of the various grating levels, designated here as ho, and identical lengths of the diffraction structure levels Ni, N 2 , N 3 and N 4 along the period running direction, designated by R in this case.
• the period run ning direction R can also be the radius of a concentric diffraction structure, wherein a centre of this diffraction structure can coincide with a centre of the collector mirror 24.
• One complete period p of the diffraction component in the period running direction R includes firstly the four descending diffraction structure levels Ni to N 4 and then two succeeding, reascending diffraction structure levels Ns, No, wherein a structure depth of the diffraction structure level Ns corre sponds to that of the diffraction structure level N3 and a structure depth of the diffraction structure level No corresponds to that of the diffraction structure level N 2 .
• Further embodiments of optical diffraction components 94, 95 for suppressing at least one target wavelength by destructive interference are described below with reference to Figs 38 and 39. Components and functions corresponding to those which have already been explained above with ref- erence to Figs 1 to 37, and particularly with reference to Figs 36 and 37, bear the same reference signs and will not be discussed in detail again.
• the diffraction component 94 has, succeeding one another along a period running direction R within one grating period p, dif- fraction structure levels Ni having a structure depth 0, N2 having a structure depth hi, N3 having a structure depth hi + 112 and N4 having a structure depth I12. It holds true that: hi ⁇ I12.
• a diffraction structure level Ni having a structure depth
• a diffraction structure level N2 having a structure depth hi
• a diffraction structure level N3 having a structure depth I12
• a diffraction structure level N4 having a structure depth hi + 112.
• an intensity in the zero order of diffraction can be specified as:
• Such a multilevel grating of the type of the gratings of the embodiments in Figs 35 to 39 can be generalized for the suppression of a number n of target wavelengths by destructive interference. In order that n wavelengths are suppressed, 2n different diffraction structure levels Ni having the following heights are required: hi, I12, ...
• Fig. 40 shows, in a diagram, a wavelength-dependent reflectivity R of a variant of the optical diffraction component with two structure depths di and d2, for example of the type of the optical gratings 60, 64 or 71 according to Figs 16, 19 and 22.
• the result is a reflectivity curve 96 shown as a solid line in Fig. 40.
• depicted by dashed lines are reflectivity curves 97 and 98 for corresponding optical gratings comprising exactly one diffraction grating, designed with a structure depth di (reflectivity curve 97) and d2 (reflectivity curve 98).
• the reflectivity curve 96 shows a suppression for the two target wave lengths li ⁇ 180 nm and l 2 ⁇ 210 run.
• the suppression at these two DUV wavelengths here is better than 10 5 .
• the grating with the reflectivity curve 97 also suppresses the two DUV wavelengths li ⁇ equal to 180 nm and l 2 ⁇ equal to 210 nm with a suppression of better than 10 6 , as shown by the magnified detail in the DUV range in Fig. 42.
• Fig. 43 illustrates, in a diagram, how, with the use of an optical diffraction component composed of plurality of diffraction structure groups, the re quirements in respect of a structure depth and/or sidewall steepness toler ance are relaxed as the number of diffraction structure groups increases.
• the illustration shows once again a reflectivity as a function of a wave length in the range of between 10.0 and 11.0 mhi.
• a target wavelength in the region of 10.6 pm is intended to be suppressed with a suppression of better than 10 4 .
• a reflectivity curve for an optical diffraction component comprising ex actly one diffraction structure group, that is to say comprising exactly one diffraction grating, is illustrated at 98 in Fig. 43, the value 2.65 pm being assumed for a structure depth d, which is permitted to fluctuate within a tolerance bandwidth of 0.5%.
• Fig. 44 shows again the optical grating 60 comprising the diffraction struc ture levels Ni to N4, as already explained above in particular with reference to Figs 14 to 16.
• Fig. 44 additionally illustrates two lithographic mask structures 105, 106, which can be used during lithographic production of the optical grating 60.
• the lithographic mask structure 105 illustrated as closest adjacent to the optical grating 60 in Fig. 44 has mask regions 107, which are impermeable to an etching medium, and intervening mask gaps 108, which are permea ble to the etching medium.
• a periodicity of the mask structure 105 corre sponds to that of the diffraction grating 62 according to Fig. 15.
• the mask structure 105 defines level sidewalls N4 / N3 between the diffraction struc ture levels N 4 and N 3 , firstly, and Ni / N2 between the diffraction structure levels Ni and N2, secondly.
• the second lithographic mask structure 106 Arranged offset with respect hereto along the period running direction x is the second lithographic mask structure 106 having mask regions 109 and mask gaps 110.
• a periodicity of this second lithographic mask structure 106 corresponds to that of the diffraction grating 61 according to Fig. 14.
• the second lithographic mask structure 106 defines the position of the level sidewalls N 3 / Ni between the diffraction structure levels N 3 and Ni, firstly, and N 2 / N 4 between the diffraction structure levels N 2 and N 4 , sec ondly.
• a topography of the diffraction structure levels Ni to N 4 of the optical grat ing 60 can be described as a superimposition of two binary structures, namely of the diffraction structure groups 61, 62 that are producible with the aid of the lithographic mask structures 105, 106 (also cf Figs 14 and 15).
• Each of these binary structures 61, 62 has first surface sections having a first structure depth, namely the positive structures 61p, 62p of the struc ture groups 61, 62, and second surface sections having a second structure depth, namely the negative structures 6 I N , 62 N , which alternate with the first surface sections 61p, 62p along the period running direction x.
• Bound ary regions between these adjacent surface sections 61p / 6 I N , firstly, and 62p / 62 N , secondly, that is to say the level sidewalls Ni / N j explained above, of each of the binary structures 61, 62 have a linear course perpen dicular to the period running direction and perpendicular to the plane of the drawing in Figs 14 to 16 and 44.
• These boundary regions N 3 / Ni, N 2 / N 4 of the first binary structure 61 and the boundary regions N 4 / N 3 , Ni / N 2 of the second binary structure 62 run completely separately from one another, that is to say are not superimposed on one another in their course perpendicular to the period running direction x.
• a further characteristic of the optical grating 60 is that, as viewed along the period running direction x, each rising level sidewall, that is to say
• N 3 / Ni firstly, and N 4 / N 3 , secondly, is respectively assigned a falling level sidewall of the same structure depth.
• the rising level side- wall N 3 / Ni is assigned the falling level sidewall N 2 / N 4 .
• the rising level sidewall N 4 / N 3 is assigned the falling level sidewall Ni / N 2 .
• the firstly as signed level sidewalls N 3 / Ni and N 2 / N 4 in this case have the structure depth di.
• the level sidewalls N4 / N3 and Ni / N2 likewise assigned to one another have the structure depth d2.
• one of the two mask structures 105, 106 for example the mask structure 105, is used and, in the region of the mask gaps 108, in a first etching step using an etching region, provided by a corresponding source, negative structures having the width of the mask gaps 108 with a predefined first etching depth d2 are produced in a substrate.
• the mask structure 105 is removed and the mask structure 106 is used and, in a further etching step, the substrate is etched further with the depth di until the diffraction structure levels Ni to N4 cor responding to the illustration at the bottom of Fig. 44 have arisen.
• the mask production of the optical grating 60 thus involves using firstly a first mask structure for lithographically etching a substrate and then a second mask structure, which is different with regard to the positions of mask re gions and mask gaps.
• This difference in the position of the mask re gions/mask gaps can be achieved by exchanging a first mask structure for a further mask structure and/or by displacing a mask structure along the run ning direction x.
• the production method can also include more than two etching steps and it is also possible to use more than two different mask structures and/or more than two etching steps.
• Fig. 45 shows the relations during lithographic production of the optical grating 64 (also cf. Figs 17 to 19). Components and functions correspond ing to those which have already been explained above with reference to Figs 1 to 44, and particularly with reference to Figs 14 to 19 and 44, bear the same reference signs and will not be discussed in detail again.
• two lithographic mask structures 111, 112 are illustrated for the optical grating 64, said mask structures once again having periodically suc cessive mask regions and mask gaps.
• the lithographic mask structure 111 has mask regions 113 and mask gaps 114 and the lithographic mask structure 112 has mask regions 115 and mask gaps 116.
• the lithogra phy mask structure 111 defines the level sidewalls N 3 / N 2 , firstly, and N 2 / N 3 , secondly, and the further lithographic mask structure 112 defines the level sidewalls N 2 / Ni, firstly, and Ni / N 2 , secondly.
• the optical grating 64 results as a superimposition of two binary structures 65, 66 (cf.
• each rising level sidewall that is to say the sidewalls N2 / Ni and N3 / N2 is once again assigned a falling level sidewall of the same structure depth, namely the rising level sidewall N2 / Ni is assigned the falling level sidewall Ni / N2, and the rising level sidewall N3 / N2 is assigned the falling level sidewall N2 / N3.
• optical gratings 71, 76, 80 described above in particular with reference to Figs 20 to 22, 25 to 28 and 29 to 32 can also be described as a corre sponding superimposition of binary structures whose boundary regions be tween the surface sections, that is to say whose level sidewalls Ni / N j , are not superimposed on one another, as already explained above with refer ence to the optical gratings 60 and 64.
• optical gratings 76 and 80 these can be described as a superimposition of three binary struc tures whose boundary regions, that is to say level sidewalls Ni, N j , are not superimposed on one another.
• each rising level sidewall is assigned a falling level sidewall of the same structure depth.
• FIG. 46 A further embodiment of an optical diffraction component 117, once again in the form of an optical grating, for suppressing at least one target wave length by destructive interference is described below with reference to Fig. 46.
• Components and functions corresponding to those which were al ready explained above with reference to Figures 1 to 45 are denoted by the same reference signs and are not discussed in detail again.
• the optical grating 117 is embodied as a grating structure profile that is pe riodic along the period running direction x, comprising diffraction struc tures having three diffraction structure levels Ni, N2, N3.
• a grating period p of the grating structure profile of the optical grating 117 is subdivided into a total of four period sections of the diffraction structure levels Ni to N 3 . Two of these four period sections are embodied as the neu tral diffraction structure level N 2 , one of the four period sections is embod ied as the positive diffraction structure level Ni and the fourth of the four period sections is embodied as the negative diffraction structure level N 3 .
• the sequence along the unit cell chosen in Fig. 46, said unit cell being bounded by dashed lines, in the period running direction x is: N 2 , Ni, N 2 , N3.
• the four period sections within one grating period p have the same structure length XN.
• the lengths of the period sections that is to say the x-extensions of the respective diffraction structure levels Ni to N 3 , to differ from one another in pairs.
• the described arrangement that is to say the structure depths and the lengths along the period running direction x, of the diffraction structure levels Ni to N 3 is such that a first target wavelength li in the infrared wavelength range, which is diffracted by the grating structure profile, has radiation components having three different phases which interfere with one another destructively in the zero order of diffraction of the first target wavelength li.
• a suppression effect thus results, as has been explained above inter alia in association with the other optical diffraction components according to Figs 1 to 45.
• this suppression effect is squared in comparison with the suppression of a sin gle binary grating (not illustrated), with the result that the optical grating 117 has a suppression effect of 10 4 , for example, if a binary grating in which positive diffraction structure levels Ni were in turn arranged instead of the negative diffraction structure levels N3 has a suppression of 10 2 .
• the target wavelength can once again be in the range of between 10 pm and 11 pm.
• the influence of a structure depth error on the diffraction efficiency is ex plained below with reference to Figs 47 and 48. It is assumed here that light having the wavelength l to be suppressed is incident on the optical grating 117 from above with normal incidence in Figs 47 and 48. This as sumption“normal incidence” serves merely as a model assumption for the following consideration. In practice, the angle of incidence of the light reg ularly deviates from normal incidence. Accordingly, the structure depths of the optical diffraction components described here are then adapted to the respective angle of incidence. The methods for carrying out this design ad aptation are known to the person skilled in the art.
• a structure depth of the diffraction structure groups can vary continuously from a centre of the EUV collector 24 towards the edge of the EUV collector 24.
• Regions of identical phase Po of the wave of the reflected light are illus trated by filled-in dots in Figs 47 and 48. Since the diffraction structure levels Ni, firstly, and N 3 , secondly, are offset relative to the neutral diffrac tion structure level N2 in each case by an optical path length of l/4, it is ev ident that for the total of four period sections of the grating period of the optical grating 117 illustrated in Fig. 47, in each case two regions of the re flected light result whose phase Po is reflected relative to two further re gions in a manner offset exactly by half a wavelength, that is to say by l / 2, which, in the case of the perfect l/4 structure depths in Fig. 47, leads to the perfect suppression of the incident light, that is to say to the destruc tive interference of the reflected light.
• Fig. 47 shows the case in which the positive diffraction structure level Ni has a structure depth which is greater than l/4 and the negative diffraction structure level N3 has a structure depth which has the same absolute value as the structure depth of the positive diffraction structure level Ni, that is to say is correspondingly likewise greater than l/4 in absolute terms. A height error is thus present in the case of the grating according to Fig. 47.
• Regions of identical phase Po , d of the light reflected by the positive diffrac tion structure level Ni, firstly, and by the negative diffraction structure level N3, secondly, are illustrated by open circles in Fig. 48.
• This averaging brings about an improvement of the suppression in the case of the grating having the three diffraction structure levels Ni to N 3 in comparison with a binary grating having only two diffraction structure levels corresponding to the diffraction structure levels Ni and N 2 and a corresponding height error.
• Fig. 49 shows a further variant of an optical diffraction component for sup pressing at least one target wavelength in the form once again of an optical grating 118 comprising diffraction structures, having once again three dif fraction structure levels Ni, N 2 and N 3 .
• Fig. 49 illustrates once again using dashed lines a unit cell extending along the period running direction x over one period p.
• the neutral diffraction structure level N 2 which is present first in this unit cell in the period run ning direction x, has double the length 2XN in comparison with the other two diffraction structure levels.
• the sequence of the diffraction structure levels in the period running direction within the unit cell illustrated is thus: neutral diffraction structure level N2 of double length 2XN, positive diffrac tion structure level Ni having single length XN, negative diffraction struc ture level having single length XN.
• a positive diffraction structure level Ni is fol lowed directly by a negative diffraction structure level N3, such that an in tervening level sidewall has a structure depth of l / 2.
• Fig. 50 shows a further embodiment of an optical diffraction component for suppressing at least one target wavelength, said optical diffraction com ponent being fashioned as an optical grating 120, once again comprising diffraction structures having four diffraction structure levels Ni to N4.
• the optical grating 120 has the following sequence of diffraction structure levels: positive diffraction structure level Ni having a structure depth + l/4, neutral diffrac tion structure level N2, negative diffraction structure level N3 having a structure depth - l/4, doubly negative diffraction structure level N 4 having a structure depth - l / 2, negative diffraction structure level N 3 and neutral diffraction structure level N2.
• the unit cell of the optical grating 120 thus includes the diffraction structure level sequence Ni, N2, N3, N4, N3, N2 or a corresponding cyclic interchange.
• optical diffraction component 51 shows a further embodiment of an optical diffraction component for suppressing at least one target wavelength, said optical diffraction com ponent being fashioned as an optical grating 121, once again comprising diffraction structures having five diffraction structure levels Ni to Ns.
• the optical grat- ing 121 has the following sequence of diffraction structure levels: positive diffraction structure level Ni having a structure depth + l/4, neutral diffrac tion structure level N 2 , negative diffraction structure level N 3 having a structure depth - l/4, doubly negative diffraction structure level N 4 having a structure depth - l/2, triply negative diffraction structure level Ns having a structure depth - 3 l/4, doubly negative diffraction structure level N 4 hav ing a structure depth - l/2, negative diffraction structure level N 3 having a structure depth - l/4, and neutral diffraction structure level N 2 .
• the unit cell of the optical grating 120 thus includes the diffraction structure level se qu
• the additional diffraction structure levels N 4 in the case of the optical grat ing 120 and N 4 , Ns in the case of the optical grating 121 result in an addi tional reinforcement of the diffraction effect, that is to say in a further rein- forcement of the destructive interference of the target wavelength l.
• Fig. 52 shows a reflectivity curve 125 of an optical grating of the type from Fig. 46 having the sequence therein of the diffraction structure levels Ni,
• Fig. 53 illustrates further embodiments of litho graphic mask structures 126, 127 which are used during the lithographic production of the optical grating 64 and once again have periodically suc cessive mask regions and mask gaps.
• the lithographic mask structure 126 has successive mask regions 128 and 129 and intervening mask gaps 130 and 131 and the mask structure 127 has successive mask re gions 132 and 133 and intervening mask gaps 134 and 135.
• the mask re gion 128 of the mask structure 126 defines the level sidewalls N 3 /N 2 , firstly, and N1/N2, secondly.
• the further mask region 129 of the mask stmcture 126 defines the level sidewalls N 2 /N 1 and N 2 /N 3 for the next se quence of the diffraction structure levels of the optical grating 64 that fol lows in the period running direction x.
• the further lithographic mask struc ture 127 defines, with the mask region 132, the level sidewalls N 2 /N 1 and N 2 /N 3 of the period of the diffraction structure level s Ns leading in the pe riod running direction x and the mask region 133 of the mask structure 127 defines the level sidewalls N 3 /N 2 and N 1 /N 2 of the next period of the dif fraction structure levels Ni.
• the optical grating 64 correspondingly results as a superimposition of two binary structures whose boundary regions, per pendicular to the period running direction x (perpendicular to the plane of the drawing in Fig. 53) run completely separately, that is to say are not su perimposed on one another.
• the mask structures 128, 129, firstly, and 132, 133, secondly, have in each case the same x-extension, namely in each case 2X N .
• the mask gaps 131, firstly, and 134, secondly, have in each case the same x-extension, namely in each case X N .
• the mask structures 130 and 135 likewise have in each case the same x-extension, namely in each case 3X N .
• the mask structures 126, 127 thus predefine alternately different level side- walls for the respectively successive periods p of the optical grating 64. By means of shifting by a period length p, most mask structures 126 and 127 can be converted into one another.
• Fig. 54 shows an alternative embodiment of two mask structures 136, 137 during lithographic production of the optical grating 64.
• the mask structure 136 has mask regions 138, 139 and intervening mask gaps 140, 141.
• the mask structure 137 has mask regions 142, 143 and in tervening mask gaps 144 and 145.
• An x-extension of the mask regions 138, firstly, and 143, secondly, is 3X N and thus three times the magnitude of an x-extension of the mask regions 139, firstly, and 142, secondly, which is X N .
• the mask gaps 140, 141, 144 and 145 have in each case an extension of 2XN.
• the litho graphic mask structure 136 defines, with the mask region 138, the level sidewalls N 3 /N 2 and N 2 /N 3 of the first period p of the diffraction structure levels Ni to N 3 of the grating 64 and the mask region 139 defines the level sidewalls N 2 /N 1 , firstly, and N 1 /N 2 , secondly, of the second period p of the diffraction structure levels Ni to N 3 .
• the further lithographic mask struc ture 137 defines, with the mask region 142, the level sidewalls N 2 /N 1 and N 1 /N 2 of the first period and, with the mask region 143, the level si dewalls N 3 /N 2 and N 2 /N 3 of the succeeding period p of the diffraction structure lev els Ni to N 3 .
• the mask structures 136 and 137 predefine alternately different level sidewalls of the successive periods of the diffrac tion structure levels Ni to N 3 .
• the relations during the production of a further embodiment of an optical grating 146 with two mask structures 147, 148 will be described with refer ence to Fig. 55.
• Figs 53 and 54 which each show two grating periods of the optical grating 64, one grating period p is shown in Fig. 55.
• the optical grating 146 has the following se quence of the diffraction structure levels Ni in the running direction x: Ni, N2, Ni, N2, N 3 and N2.
• the grating period p has an extension of 6XN. All diffraction levels Ni have in each case an extension of XN.
• the mask structure 147 has per period p mask regions 149, 150 and inter vening mask gaps 151, 152 and the mask structure 148 has per period p ex actly one assigned mask region 153 and one mask gap 154.
• the mask re gion 149 and the mask region 150 have an extension of 2X N .
• the mask gaps 151, 152 have an extension of X N .
• the mask region 153 has an exten- sion of 3X N .
• the mask gap 154 likewise has an extension of 3X N .
• an optical grating 155 with two mask structures 156, 157 will be described with refer ence to Fig. 56.
• Figs 53 and 54 which each show two grating periods of the optical grating 64
• one grating period p is shown in Fig. 56.
• the optical grating 155 has the following se quence of the diffraction structure levels N,: N2, Ni, N2, Ni, N 2 and N 3 .
• N2 the grating period 155
• the diffraction structure levels Ni have in each case an extension of XN along the period running direction x.
• the mask structure 156 has mask regions 158 and 159 and intervening mask gaps 160, 161 and the mask structure 157 has per period exactly one mask region 162 and one mask gap 163.
• the mask regions 158 and 159 have in each case the extension X N .
• the mask gaps 160, 161 likewise have in each case the extension of 2X N .
• the mask region 162, firstly, and the mask gap 163, secondly, have in each case an extension of 3X N .
• the above-explained structurings of the optical gratings can have the effect that stray light radiation having an infrared wavelength, for example, that is reflected by the EUV collector 24 interferes destructively in a zero order and a stray light intensity is thus suppressed in the zero order.
• the optical diffraction components described above are generally used as reflective components.
• a main body of the EUV collector 24 can be manufactured from alumin- ium.
• Alternative materials for this main body are copper, alloys comprising the constituent copper and/or aluminium or alloys, produced by powder metallurgy, of copper and aluminium oxide or silicon.
• the projection exposure apparatus 1 is used as follows: first, the reflection mask 10 or the reticle and the substrate or the wafer 11 are provided. Sub sequently, a structure on the reticle 10 is projected onto a light-sensitive layer of the wafer 11 with the aid of the projection exposure apparatus 1. Then, a micro structure or nanostructure on the wafer 11, and hence the mi- crostructured component, is produced by developing the light-sensitive layer.

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