EP3803512A1 - Blende zur anordnung in einer engstelle eines euv-beleuchtungsbündels - Google Patents
Blende zur anordnung in einer engstelle eines euv-beleuchtungsbündelsInfo
- Publication number
- EP3803512A1 EP3803512A1 EP19725155.6A EP19725155A EP3803512A1 EP 3803512 A1 EP3803512 A1 EP 3803512A1 EP 19725155 A EP19725155 A EP 19725155A EP 3803512 A1 EP3803512 A1 EP 3803512A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- bundle
- section
- euv
- illumination light
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/005—Diaphragms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
Definitions
- the invention relates to a diaphragm for arrangement in a bottleneck of an EUV illumination bundle between an EUV light source for EUV illumination light and an EUV illumination optics. Furthermore, the invention relates to a lighting system with such a diaphragm, an optical system with such an illumination system, a projection exposure apparatus with such an optical system, a method for producing a microstructured or nanostructured component with such a projection exposure apparatus and a structured component with such a manufacturing method.
- US Pat. No. 9,298,110 B2 in connection with a projection exposure apparatus.
- US 2009/0073396 A1 discloses a projection exposure apparatus with an interface between a light source and a lighting optical system.
- WO 2012/100 846 A1 discloses a waveguide structure for use in a projection exposure apparatus.
- US 2011/0026002 A1 discloses an EUV light source and an interface between the light source and an illumination optics.
- DE 10 201 1 015 266 A1 discloses an EUV phosphatorsy system with a device for amplifying an EUV radiation collection. It is an object of the present invention, a diaphragm of the type mentioned in such a way that a defined specification of the illuminating light beam results on the one hand with good thermal capacity of the diaphragm.
- a bundle tube section between the bundle inlet section and the bundle outlet section leads to the possibility of predetermining a course of the EUV illumination light beam to be used in a very defined manner and, on the other hand, of serving a larger aperture stop.
- the constriction in which the diaphragm can be arranged may be an intermediate focus of an optical path of the EUV illumination beam.
- the EUV illumination light beam can then be well defined, which can be used to image the then well defined constriction in the further course of a bundle path and in particular to provide an advantageously small Pupillenconcellgrades within an EUV projection exposure system.
- a well-defined illumination angle distribution of an illumination of an object field of the projection exposure apparatus and correspondingly a very good structure resolution in the projection exposure are the result.
- the inner wall of the bundle tube section can be designed to be absorbent for radiation and / or debris components entrained undesirably with the EUV illumination light.
- the bundle tube section can effectively dissipate heat caused by absorption of unwanted light or radiation components. With the diaphragm, an effect can be realized for transmitted EUV illumination light, which does not change the light distribution within the transmitted EUV illumination light beam virtually as far as possible or as little as possible.
- the EUV illumination light for which the inner wall of the bundle tube section is designed to be reflective, can have a wavelength in the range between 5 nm and 30 nm.
- An absorbent inner wall according to claim 2 or claim 3 provides a good release effect of the panel and also for a good bundle-forming effect.
- the inner wall of the inlet section and / or the inner wall of the outlet section may be designed to be absorbent for radiation and / or debris components entrained undesirably with the EUV illumination light.
- a length / radius ratio of the bundle tube section according to claim 5 has been found to be particularly suitable for a good bundle-forming effect combined with a good separating effect and good heat removal.
- the ratio L / R may be greater than 1.5, may be greater than 2.0, and may be greater than 2.5.
- the ratio L / R may be less than 10, may be less than 5 and may be less than 3.
- a configuration of the cone angle according to claim 7 ensures a good adaptation of the diaphragm shape to the beam divergence.
- a rounded transition region according to claim 8 avoids local heat peaks in these transition areas.
- An absorbent embodiment of the transition region according to claim 9 avoids the generation of unwanted stray light.
- the transition area can be designed to be absorbed both for the EUV illumination light and for unwanted light or radiation components.
- the advantages of a lighting system according to claims 10 and 11, an optical system according to claim 12, a projection exposure apparatus according to claim 13, a manufacturing method for a micro- or nanostructured component according to claim 14 and a manufactured micro- or nanostructured component correspond to those which have already been explained above with reference to the diaphragm according to the invention.
- the component may be a semiconductor chip, for example a memory chip.
- FIG. 1 shows a projection exposure apparatus for microlithography schematically and with reference to an illumination optics in the meridional section
- FIG. FIG. 2 enlarges in an axial section a bottleneck or intermediate-focus diaphragm of the illumination optics of the projection exposure apparatus according to FIG. 1
- FIG. 3 shows a further embodiment of an intermediate focus diaphragm which, instead of that according to FIG. 2, can be used in the illumination optics of the projection exposure apparatus according to FIG. 1.
- a microlithography projection exposure apparatus 1 serves to produce a microstructured or nano-structured electronic semiconductor component.
- a light source 2 emits EUV radiation used for illumination in the wavelength range, for example, between 5 nm and 30 nm.
- the light source 2 may be a GDPP source (plasma discharge by gas discharge, produced plasma) or an LPP source (plasma generation by laser, laser produced plasma).
- a radiation source based on a synchrotron can also be used for the light source 2. Information about such a light source can be found, for example, in US Pat. No. 6,859,515 B2.
- EUV illumination light or illumination radiation in the form of an imaging light bundle 3 is used for illuminating and imaging within the projection exposure apparatus 1.
- Bundle 3 passes after the light source 2, first a collector 4, which is, for example, a nested collector with a known from the prior art multi-shell structure or alternatively to one, then behind the light source 2 arranged ellipsoidal shaped Collector can act.
- a corresponding collector is known from EP 1 225 481 A and from US 9 298 110 B2.
- the EUV illumination light 3 first passes through an intermediate focus plane 5, which can be used to separate the imaging light beam 3 from unwanted radiation or particle fractions.
- an intermediate focus diaphragm 5a is arranged, which is shown in an axial longitudinal section and will be explained in more detail below.
- the imaging light beam 3 first strikes a field facet mirror 6.
- FIG. 1 shows a Cartesian global xyz coordinate system.
- the x-axis in Fig. 1 is perpendicular to the plane and out of this.
- the y-axis extends in Fig. 1 to the right.
- the z-axis extends in Fig. 1 upwards.
- Field facets of the field facet mirror 6, which are not shown in the drawing, may be rectangular or arcuate, and each have the same x / y aspect ratio.
- the x / y aspect ratio may be, for example, 12/5, 25/4, 104/8, 20/1, or 30/1.
- the field facets specify a reflection surface of the field facet mirror 6 and are grouped, for example, in several columns into a plurality of field facet groups.
- the image light bundles 3 divided into imaging light subbeams associated with the individual field facets After reflection at the field facet mirror 6, the image light bundles 3 divided into imaging light subbeams associated with the individual field facets impinge on a pupil facet mirror 10.
- the respective imaging light subbeam of the entire imaging light beam 3 is guided along one imaging light channel each.
- the pupil facets of the pupil facet mirror 10, which are also not shown in the drawing, can, for. B. be arranged around a center in lying inside facet rings.
- a pupil facet is assigned to each imaging light partial bundle of the EUV illumination light 3 that is reflected by one of the field facets, so that in each case an acted facet pair with one of the field facets and one of the pupil facets illuminates the imaging light channel for the associated imaging light partial bundle EUV illumination light 3 pretends.
- the channel-wise assignment of the pupil facets to the field facets takes place as a function of the desired illumination by the projection exposure apparatus 1. Such a channel-wise assignment is explained in more detail, for example, in US 2015/0015865 A1.
- the field facets are imaged into an object plane 16 of the projection exposure apparatus 1.
- the EUV mirror 14 is designed as a grazing incidence mirror.
- a particle 17 is arranged, from which with the EUV illumination light 3 a light is emitted.
- illuminating area is illuminated, which coincides with an object field 18 of a downstream projection optics 19 of the projection exposure system 1.
- the illumination area is also called a lighting field.
- the object field 18 is rectangular or curved.
- the image light channels are superimposed in the object field 18.
- the EUV illumination light 3 is reflected by the reticle 17.
- the reticle 17 is held by an object holder 17a which is displaceable along the displacement direction y by means of a schematically indicated object displacement drive 17b.
- the projection optical system 19 images the object field 18 in the object plane 16 into an image field 20 in an image plane 21.
- a wafer 22 is arranged, which carries a photosensitive layer, which is exposed to the projection exposure apparatus 1 during the projection exposure.
- the wafer 22, that is to say the substrate onto which is imaged, is held by a wafer or substrate holder 22a which is displaceable along the displacement direction y by means of a likewise schematically indicated wafer displacement drive 22b in synchronism with the displacement of the object holder 17a.
- both the reticle 17 and the wafer 22 are scanned synchronously in the y direction.
- the projection exposure apparatus 1 is designed as a scanner.
- the scanning direction y is the object displacement direction.
- an illumination intensity correction device 24 Arranged in a correction plane 23 is an illumination intensity correction device 24 whose structure and function are described, for example, in US 2015/0015865 A1.
- the correction device 24 is controlled by a control device 25.
- Further examples of a cor- are known from WO 2009/074 211 Al, the
- EP 0 952 491 A2 as well as from DE 10 2008 013 229 A1.
- the field facet mirror 6, the pupil facet mirror 10, the mirrors 12 to 14 of the transfer optics 15 and the correction device 24 are components of an illumination optical unit 26 of the projection exposure apparatus 1. Together with the projection optics 19, the illumination optics 26 form an illumination system of the projection exposure apparatus 1.
- Fig. 2 shows the intermediate focus aperture 5a more in detail.
- the intermediate focus diaphragm 5a is arranged in the intermediate focus plane 5.
- the intermediate focus aperture 5a is used for placement in a throat, e.g. in an intermediate focus, the EUV illumination light beam 3 between the light source 2 and the illumination optics 26.
- the diaphragm 5a has a bundle inlet section 27, into which the illumination light bundle 3, coming from the collector 4, enters the diaphragm 5a.
- a main propagation direction of the illumination light beam 3 through the diaphragm 5a is designated P in FIGS.
- the unwanted entrained light components for example, have the wavelength of the illumination light 3, but not within the divergence of the illumination light beam 3 run.
- the unwanted radiation components can have a different wavelength than the illumination light 3.
- the Rinvierabêt 27 of the diaphragm 5a has a decreasing in the propagation direction P cross-section.
- the bundle inlet section 27 has a conically tapered inner wall 28. This inner wall
- a cone angle K E of the inner wall 28 is defined as the angle between a section line of the inner wall 28 in the axial longitudinal section shown in FIG. 2 to the axial longitudinal axis 29 of the diaphragm 5 a. This longitudinal axis
- the diaphragm 5a has a bundle tube section 30.
- the tube section 30 has a constant cross-section in the propagation direction P.
- An inner wall 31 of the tube section 30 is designed to be reflective and in particular highly reflective for the illumination light 3.
- the inner wall 31 may have, for example, a ruthenium coating as a highly reflective coating.
- the inner wall 31 can act to absorb the unwanted radiation components by applying material that is reflective for the illumination light 3 to material absorbing for other wavelength ranges.
- material that is reflective for the illumination light 3 to material absorbing for other wavelength ranges.
- Such materials are for example from the US
- the inner wall 31 may be structured such that unwanted radiation components (analogous to previously cited US Pat. No. 8,198,613 B2) reflect light other than the illumination light 3 and then later in FIG System, for example, on the still to be described bundle outlet section 32 is absorbed.
- the pipe section 30 has a circular cross-section with radius R.
- the pipe section 30 has measured along the longitudinal axis 29, ie in the propagation direction P, a length L.
- a ratio of the length L and the radius R of the pipe section 30 is greater than 1 , 0th
- the radius R is absolutely a size in the range between 2 mm and 5 mm.
- the diaphragm 5a has a bundle outlet section 32.
- the outlet section 32 has a cross-section enlarging in the propagation direction P.
- An inner wall 33 of the discharge section 32 is designed to be absorbent for the illumination light 3 and the unwanted radiation components.
- the inner wall 33 extends conically in the propagation direction P with a cone angle KA between the line of intersection of the inner wall 33 and the longitudinal axis 29.
- KE KA.
- the cone angles KE, KA can also be different from one another.
- the intermediate focus diaphragm 5a is mirror-symmetrical overall to a center plane 34, which is perpendicular to the longitudinal axis 29.
- the center plane 34 coincides with the intermediate focus plane 5.
- a transitional edge region 35, 36 of the inner walls of the diaphragm 5a between the inlet section 27 and the pipe section 30 on the one hand and between the pipe section 30 and the outlet section 32 on the other hand is designed to be absorbent for the EUV illumination light 3 and for the unwanted radiation components ,
- This edge region 35, 36 can be manufactured with a transitional edge.
- the course of the illumination light beam 3 through the intermediate focus diaphragm 5a is also shown in FIG. Shown is a longitudinal section of the course of an expansion of the illumination light beam 3, which has a focus in the pipe section 30 in the Eisenfokusebene 5.
- the cone angle KE, KA of the inlet section 27 and the outlet section 32 of the diaphragm 5a are thus adapted to the divergence angle QB of the illumination light beam 3.
- the cone angle KE and / or the cone angle KA may also be different from the divergence angle QB.
- the number of maximum reflections of the EUV illumination light 3 on the inner wall 31 can be greater than 1, can be greater than 2, can be larger its number 3 can be greater than 4. This number of reflections is usually no more than 5.
- Unwanted light or radiation components are also absorbed at the absorbing inner walls 28 and 33 of the inlet section 27 and the outlet section 32.
- KE and / or KA can range between 5 ° and 30 °.
- KE and / or KA can in particular be in the range between 8.63 ° and 14.48 °, which corresponds to a numerical aperture in the intermediate focus of the illumination light beam 3 between 0.15 and 0.25.
- KE and / or KA may in particular have a value of approximately 8.6 °, 9.2 °, 9.8 °, 10.4 °,
- the illumination light beam 3 can have a useful power of more than 100 W, for example of 500 W.
- the power of the unwanted light and radiation components can have the same order of magnitude.
- FIG. 3 shows a further embodiment of the intermediate focus aperture 5a.
- Components and functions corresponding to those described above with reference to FIGS. 1 and 2 and particularly with reference to FIG. 2 have the same designations and reference numerals and will not be discussed again in detail.
- edge transition regions 35a, 36a in the aperture 5a of FIG. 3 are rounded. These rounded transition regions 35a, 36a are made absorbent for the illumination light 3 as well as for other entrained wavelengths.
- the ratio L / R is in the range between 0.5 and 3. As a rule, this ratio L / R is at least 1.0.
- the reticle 17 and the wafer 22, which carries a photosensitive coating for the illumination light 3 are provided. Subsequently, a portion of the reticle 17 is projected onto the wafer 22 with the aid of the projection exposure apparatus 1. Finally, the light-sensitive layer exposed to the illumination light 3 is developed on the wafer 22. In this way, a micro- or nano-structured component, for example a semiconductor chip, is produced.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018208710.5A DE102018208710A1 (de) | 2018-06-04 | 2018-06-04 | Blende zur Anordnung in einer Engstelle eines EUV-Beleuchtungsbündels |
PCT/EP2019/062845 WO2019233741A1 (de) | 2018-06-04 | 2019-05-17 | Blende zur anordnung in einer engstelle eines euv-beleuchtungsbündels |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3803512A1 true EP3803512A1 (de) | 2021-04-14 |
Family
ID=66597618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19725155.6A Pending EP3803512A1 (de) | 2018-06-04 | 2019-05-17 | Blende zur anordnung in einer engstelle eines euv-beleuchtungsbündels |
Country Status (5)
Country | Link |
---|---|
US (1) | US11350513B2 (de) |
EP (1) | EP3803512A1 (de) |
KR (1) | KR20210018347A (de) |
DE (1) | DE102018208710A1 (de) |
WO (1) | WO2019233741A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111123531B (zh) * | 2019-12-29 | 2020-11-17 | 中国科学院西安光学精密机械研究所 | 一种基于空间整形的减反微纳结构阵列 |
CN112213822B (zh) * | 2020-09-25 | 2023-06-20 | 武汉锐科光纤激光技术股份有限公司 | 一种空间耦合器 |
DE102020212229B3 (de) | 2020-09-29 | 2022-01-20 | Carl Zeiss Smt Gmbh | Blenden-Vorrichtung zur Begrenzung eines Strahlengangs zwischen einer Lichtquelle und einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die Projektionslithographie |
DE102021112833A1 (de) | 2021-05-18 | 2022-11-24 | Precitec Gmbh & Co. Kg | Blende für einen Laserbearbeitungskopf |
DE102021213327B3 (de) * | 2021-11-26 | 2023-03-16 | Carl Zeiss Smt Gmbh | Metrologiesystem zur Untersuchung von Objekten mit EUV-Messlicht |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0952491A3 (de) | 1998-04-21 | 2001-05-09 | Asm Lithography B.V. | Lithographischer Apparat |
DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
JP3647834B2 (ja) | 2002-09-25 | 2005-05-18 | 松下電器産業株式会社 | 露光装置用のミラー、露光装置用の反射型マスク、露光装置及びパターン形成方法 |
US8115900B2 (en) * | 2007-09-17 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102008013229B4 (de) | 2007-12-11 | 2015-04-09 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
US9200359B2 (en) | 2008-03-12 | 2015-12-01 | Acktar Ltd. | Thin-layered structure |
JP5061063B2 (ja) | 2008-05-20 | 2012-10-31 | ギガフォトン株式会社 | 極端紫外光用ミラーおよび極端紫外光源装置 |
NL2004816A (en) * | 2009-07-07 | 2011-01-10 | Asml Netherlands Bv | Euv radiation generation apparatus. |
JP5758153B2 (ja) | 2010-03-12 | 2015-08-05 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法 |
US8587768B2 (en) * | 2010-04-05 | 2013-11-19 | Media Lario S.R.L. | EUV collector system with enhanced EUV radiation collection |
WO2012100846A1 (en) * | 2011-01-25 | 2012-08-02 | Asml Netherlands B.V. | Conduit for radiation, suitable for use in a lithographic apparatus |
DE102012205886A1 (de) | 2012-04-11 | 2013-10-17 | Carl Zeiss Smt Gmbh | Beleuchtungsintensitäts-Korrekturvorrichtung zur Vorgabe einer Beleuchtungsintensität über ein Beleuchtungsfeld einer lithographischen Projektionsbelichtungsanlage |
-
2018
- 2018-06-04 DE DE102018208710.5A patent/DE102018208710A1/de active Pending
-
2019
- 2019-05-17 EP EP19725155.6A patent/EP3803512A1/de active Pending
- 2019-05-17 KR KR1020207037965A patent/KR20210018347A/ko not_active Application Discontinuation
- 2019-05-17 WO PCT/EP2019/062845 patent/WO2019233741A1/de unknown
-
2020
- 2020-11-24 US US17/102,976 patent/US11350513B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2019233741A1 (de) | 2019-12-12 |
US20210084741A1 (en) | 2021-03-18 |
DE102018208710A1 (de) | 2019-12-05 |
US11350513B2 (en) | 2022-05-31 |
KR20210018347A (ko) | 2021-02-17 |
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