EP3800663B1 - Condensateur 3d et son procédé de fabrication - Google Patents

Condensateur 3d et son procédé de fabrication Download PDF

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Publication number
EP3800663B1
EP3800663B1 EP19919567.8A EP19919567A EP3800663B1 EP 3800663 B1 EP3800663 B1 EP 3800663B1 EP 19919567 A EP19919567 A EP 19919567A EP 3800663 B1 EP3800663 B1 EP 3800663B1
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EP
European Patent Office
Prior art keywords
layer
conductive
trench
conductive layer
isolation trench
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EP19919567.8A
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German (de)
English (en)
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EP3800663A1 (fr
EP3800663A4 (fr
Inventor
Bin Lu
Jian Shen
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H01G4/306—Stacked capacitors made by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers

Definitions

  • the present application relates to the field of capacitors, and more particularly, to a capacitor and a manufacturing method therefor.
  • a capacitor can play a role of bypassing, filtering, decoupling, or the like in a circuit, which is an indispensable part for ensuring a normal operation of the circuit.
  • MLCC multi-layer ceramic capacitors
  • JP2005050805A provides a paste for conductor suppressing permeation or the like in screen printing, a laminated ceramic capacitor and a wiring substrate using the paste for conductor.
  • the paste for conductor contains non-water soluble resin (ethyl cellulose etc.), a dissolution solvent (terpineol etc.), a dilution solvent (ethylene glycol etc.), and conductive powder (silver powder etc.), and a hydrophilic lipophilic balancing value (HLB value) of the dilution solvent is larger than the HLB value of the dissolution solvent.
  • the laminated ceramic capacitor 1 has first and second electrode layers 121, 122 alternately arranged on the inside of a capacitor substrate 11 through a ceramic layer, and the first and second electrode layers are formed with the paste for the conductor.
  • the wiring substrate is formed by baking a green body having a green substrate and a green wiring pattern, and the green wiring pattern is formed with the paste for the conductor.
  • US2018/197946A1 discloses an on-chip metal-insulator-metal (MIM) capacitor with enhanced capacitance, the MIM capacitor is formed along sidewall surfaces and a bottom surface of each trench of a plurality of trenches formed in a back-end of-the-line (BEOL) metallization stack to increase a surface area of the MIM capacitor.
  • US2010/052099A1 discloses a capacitor device with a high dielectric constant material and multiple vertical electrode plates. The capacitor devices can be directly fabricated on a wafer with low temperature processes so as to be integrated with active devices formed on the wafer. This invention also forms vertical conducting lines in the capacitor devices using the through-silicon-via technology to facilitate the three-dimensional stacking of the capacitor devices.
  • US2010/224960A1 describes a semiconductor device having an embedded capacitor device and methods of fabricating the capacitor device.
  • the capacitor device is formed between the passivation layers above the backend interconnect stack of a substrate. Fabricating the capacitor device between the passivation layers above the backend interconnect stack minimizes any adverse effects the capacitor device might cause to the backend interconnect stack.
  • US2009/0141426A1 discloses a thin film multi-layered ceramic capacitor and a method of fabricating the same.
  • the thin film multi-layered ceramic capacitor includes a multi-layered structure including at least two capacitor layers stacked on top of each other.
  • Each capacitor layer includes a substrate comprising a top surface comprising a plurality of holes, and a thin film capacitor including at least three electrode layers sequentially stacked on the top surface of the substrate along the holes, and dielectric layers respectively interposed between every two adjacent electrode layers.
  • the electrode layers of each of the capacitor layers are alternately connected to a first external electrode and a second external electrode.
  • a capacitor of an embodiment of the present application can play a role of bypassing, filtering, decoupling, or the like in a circuit.
  • the capacitor described in the embodiment of the present application may be a 3D silicon capacitor which is a novel capacitor based on semiconductor wafer processing techniques. Compared with a traditional MLCC, the 3D silicon capacitor has advantages of small size, high precision, strong stability, long lifetime, and the like.
  • a 3D structure with a high aspect ratio such as a via, a trench, a pillar, or a wall, is required to be first processed on a wafer or substrate, and then an insulating thin film and a low-resistivity conductive material are deposited on a surface of the 3D structure to manufacture a lower electrode, an dielectric layer and an upper electrode of the capacitor, sequentially.
  • an existing silicon capacitor generally adopts a technical solution of stacking a plurality of layers. Two to three capacitors vertically stacked are manufactured on a surface of a three-dimensional structure, and a plurality of capacitors are then connected in parallel using a metal interconnection structure.
  • the entire manufacturing flow of a multi-layer silicon capacitor involves photolithography and deposition steps of multiple steps, and processing costs are therefore relatively expensive.
  • the present application proposes a structure and manufacturing method for a novel capacitor, which could increase a number of stacked capacitor layers of while maintaining low processing costs by repeatedly using photolithography and thin film deposition steps with a plurality of consistent parameters, and further increase a capacitance density of the capacitor.
  • Capacitors according to embodiments of the present application will be introduced in detail hereinafter with reference to FIG 1 to FIG 7 .
  • capacitors in FIG 1 to FIG 7 are merely examples, a number of conductive layers and a number of dielectric layers included in a laminated structure are merely examples, and the number of conductive layers and the number of dielectric layers included in the laminated structure are not limited to that shown in the capacitors of FIG 1 to FIG 7 , and may be flexibly set according to actual needs.
  • FIG 1 is a possible structural diagram of a capacitor 100 according to an embodiment of the present application.
  • the capacitor 100 includes a semiconductor substrate 110, a laminated structure 120, at least one first external electrode 130, and at least one second external electrode 140.
  • the laminated structure 120 is provided above the semiconductor substrate 110, the laminated structure 120 includes n conductive layers and m dielectric layer(s), the n conductive layers and the m dielectric layer(s) form a structure that a conductive layer and a dielectric layer are adjacent to each other, the i-th conductive layer of the n conductive layers is provided with at least one i-th isolation trench, the at least one i-th isolation trench divides the i-th conductive layer into at least two conductive regions electrically isolated from each other, the (i+1)-th conductive layer of the n conductive layers is provided above the i-th conductive layer and in the at least one i-th isolation trench, isolation trenches in odd-numbered conductive layers have a first overlap region in a vertical direction, isolation trenches in even-numbered conductive layers have a second overlap region in the vertical direction, and the first overlap region does not overlap the second overlap region, where m, n, and
  • the first external electrode 130 is electrically connected to all odd-numbered conductive layer(s) of the n conductive layers through a first conductive via structure 161, and the first conductive via structure 161 is provided in the second overlap region.
  • the second external electrode 140 is electrically connected to all even-numbered conductive layer(s) of the n conductive layers through a second conductive via structure 162, and the second conductive via structure 162 is provided in the first overlap region.
  • the n-th conductive layer of the n conductive layers is provided with at least one n-th isolation trench, and the at least one n-th isolation trench divides the n-th conductive layer into at least two conductive regions electrically isolated from each other.
  • shapes of cross sections of different isolation trenches provided in the same conductive layer may be the same or different.
  • FIG 1 is a section along a longitudinal direction of the semiconductor substrate.
  • the isolation trenches in the odd-numbered conductive layers of the n conductive layers have the first overlap region in the vertical direction
  • the second conductive via structure 162 is provided in the first overlap region
  • the second external electrode 140 may be electrically connected to all the even-numbered conductive layer(s) of the n conductive layers through the second conductive via structure 162.
  • the isolation trenches in the even-numbered conductive layers of the n conductive layers have the second overlap region in the vertical direction
  • the first conductive via structure 161 is provided in the second overlap region
  • the first external electrode 130 may be electrically connected to all the odd-numbered conductive layer(s) of the n conductive layers through the first conductive via structure 161.
  • the first overlap region does not overlap the second overlap region, which could prevent occurrence of a short circuit phenomenon between the first external electrode 130 and the second external electrode 140.
  • a trench capacitor is produced in conductive layers in a laminated structure, and photolithography and thin film deposition steps with a plurality of consistent parameters are repeatedly used, which reduces alignment accuracy requirements of a plurality of conductive layers in the laminated structure, and could increase a number of stacked capacitor layers while maintaining low processing costs, and further increase a capacitance density of the capacitor.
  • the isolation trenches in the odd-numbered conductive layers have the first overlap region in the vertical direction, which could also be understood as that projections of the isolation trenches in the odd-numbered conductive layers on the semiconductor substrate 110 have a first overlap region.
  • the isolation trenches in the even-numbered conductive layers have the second overlap region in the vertical direction, which could also be understood as that projections of the isolation trenches in the even-numbered conductive layers on the semiconductor substrate 110 have a second overlap region.
  • the first overlap region does not overlap the second overlap region, which could also be understood as that there is no overlap region between the projections of the isolation trenches in the odd-numbered conductive layers on the semiconductor substrate 110 and the projections of the isolation trenches in the even-numbered conductive layers on the semiconductor substrate 110.
  • an isolation trench provided in a conductive layer may be a trench with a great difference between a length and a width, or a pillar-shaped (Pillar) or a wall-shaped (Wall) 3D structure.
  • a cross section may be understood as a section parallel to a surface of the semiconductor substrate 110, and FIG 1 is a section along a longitudinal direction of the semiconductor substrate 110.
  • two adjacent conductive layers of the n conductive layers are electrically isolated by a dielectric layer.
  • the specific values of m and n may be flexibly configured according to actual needs, as long as electrical isolation between two adjacent conductive layers of the n conductive layers is satisfied.
  • an external electrode may also be referred to as a pad or an external pad.
  • the semiconductor substrate 110 may be a silicon wafer, including monocrystalline silicon, polysilicon, or amorphous silicon.
  • the semiconductor substrate 110 may also be another semiconductor substrate, including an silicon-on-insulator (SOI) wafer, or a compound semiconductor wafer of a III-V group element, such as silicon carbide (SiC), gallium nitride (GaN), or gallium arsenide (GaAs); or a glass substrate; or an organic polymer substrate; or a substrate with a surface containing an epitaxial layer, an oxide layer, a doped layer, or a bonding layer.
  • SOI silicon-on-insulator
  • III-V group element such as silicon carbide (SiC), gallium nitride (GaN), or gallium arsenide (GaAs)
  • SiC silicon carbide
  • GaN gallium nitride
  • GaAs gallium arsenide
  • a glass substrate or an organic polymer substrate; or a substrate with a
  • a thickness of the semiconductor substrate 110 may also be flexibly set according to actual needs. For example, when the thickness of the semiconductor substrate 110 is too thick to meet needs, thinning processing may be performed on the semiconductor substrate 110.
  • materials of the first external electrode 130 and the second external electrode 140 may be metal, such as copper or aluminum.
  • the first external electrode 130 and the second external electrode 140 may further contain a low-resistivity Ti, TiN, Ta, or TaN layer as an adhesion layer and/or a barrier layer, or may contain some metal layers located on surfaces of the external electrodes, such as Ni, Pd (palladium), Au, Sn (tin), or Ag, for subsequent wire bonding or welding processes.
  • the conductive layer includes at least one of: a heavily doped polysilicon layer, a carbon layer, an aluminum layer, a copper layer, a tungsten layer, a titanium layer, a tantalum layer, a platinum layer, a nickel layer, a ruthenium layer, an iridium layer, a rhodium layer, a tantalum nitride layer, a titanium nitride layer, a titanium aluminum nitride layer, a tantalum silicon nitride layer, or a tantalum carbon nitride layer.
  • a material of the conductive layer in the laminated structure 120 may be heavily doped polysilicon, carbon, metal, such as aluminum (Al), tungsten (W), copper (Cu), titanium (Ti), tantalum (Ta), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh) or nickel (Ni), a low-resistivity compound, such as tantalum nitride (TaN), titanium nitride (TiN), titanium aluminum nitride (TiAlN), tantalum silicon nitride (TaSiN) or tantalum carbon nitride (TaCN), or a combination or laminated structure of the above materials.
  • metal such as aluminum (Al), tungsten (W), copper (Cu), titanium (Ti), tantalum (Ta), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh) or nickel (Ni), a
  • the specific conductive material and layer thickness may be adjusted according to needs of the capacitor, such as a capacitance value, a frequency characteristic, or the loss.
  • the conductive layer in the laminated structure 120 may further include some other conductive materials, which is not limited in the embodiment of the present application.
  • the dielectric layer includes at least one of: a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a metal oxide layer, a metal nitride layer, or a metal oxynitride layer.
  • a material of the dielectric layer in the laminated structure 120 may be a silicon oxide, a silicon nitride, a silicon oxynitride, a metal oxide, a metal nitride, or a metal oxynitride, such as SiO 2 , SiN, SiON, or a high dielectric constant (high-k) material, including Al 2 O 3 , HfO 2 , ZrO 2 , TiO 2 , Y 2 O 3 , La 2 O 3 , HfSiO 4 , LaAlO 3 , SrTiO 3 , LaLuO 3 , or the like.
  • high-k high dielectric constant
  • the dielectric layer in the laminated structure 120 may be one layer or contain a plurality of laminated layers, and may be one material or a combination or mixture of a plurality of materials.
  • the specific insulating material and layer thickness may be adjusted according to needs of the capacitor, such as a capacitance value, a frequency characteristic, or the loss.
  • the dielectric layer in the laminated structure 120 may further include some other insulating materials, which is not limited in the embodiment of the present application.
  • an order of the m dielectric layer(s) is: an ascending order of distances to the semiconductor substrate 110 on the semiconductor substrate 110.
  • an order of the n conductive layers is: an ascending order of distances to the semiconductor substrate 110 on the semiconductor substrate 110.
  • first external electrode 130 is electrically connected to all the odd-numbered conductive layer(s) of the n conductive layers through the first conductive via structure 161
  • second external electrode 140 is electrically connected to all the even-numbered conductive layer(s) of the n conductive layers through the second conductive via structure 162, thereby avoiding that a plurality of step structures are formed by multiple times of photolithography, and the first external electrode 130 and the second external electrode 140 are respectively electrically connected to the conductive layers through the plurality of step structures, which reduces the number of photolithography steps and reduces the costs for producing the capacitor.
  • first external electrode 130 is electrically connected to all the odd-numbered conductive layer(s) of the n conductive layers
  • second external electrode 140 is electrically connected to all the even-numbered conductive layer(s) of the n conductive layers, and thus an effect of increasing a capacitance density of the capacitor by the laminated structure could be fully exerted.
  • the capacitor 100 includes a laminated structure, which is denoted as a laminated structure 1, and includes two first external electrodes and two second external electrodes.
  • the two first external electrodes are respectively denoted as a first external electrode A and a first external electrode B
  • the two second external electrodes are respectively denoted as a second external electrode C and a second external electrode D.
  • the laminated structure 1 includes five conductive layers and four dielectric layers. The five conductive layers are respectively denoted as a conductive layer 1, a conductive layer 2, a conductive layer 3, a conductive layer 4 and a conductive layer 5, and the four dielectric layers are respectively denoted as a dielectric layer 1, a dielectric layer 2, a dielectric layer 3 and a dielectric layer 4.
  • the first external electrode A is electrically connected to the conductive layer 1, the conductive layer 3 and the conductive layer 5, and the first external electrode B is also electrically connected to the conductive layer 1, the conductive layer 3 and the conductive layer 5.
  • the second external electrode C is electrically connected to the conductive layer 2 and the conductive layer 4, and second external electrode D is also electrically connected to the conductive layer 2 and the conductive layer 4.
  • the conductive layer 1 and the conductive layer 2 form a capacitor 1, whose capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, whose capacitance value is denoted as C2, the conductive layer 3 and the conductive layer 4 form a capacitor 3, whose capacitance value is denoted as C3, and the conductive layer 4 and the conductive layer 5 form a capacitor 4, whose capacitance value is denoted as C4.
  • the conductive layer 1 and the conductive layer 2 form a capacitor 1, whose capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, whose capacitance value is denoted as C2, the conductive layer 3 and the conductive layer 4 form a capacitor 3, whose capacitance value is denoted as C3, and the conductive layer 4 and the conductive layer 5 form a capacitor 4, whose capacitance value is denoted as C4.
  • capacitors corresponding to the first external electrode A and the second external electrode D a similar series-parallel structure may be formed.
  • capacitors corresponding to the first external electrode B and the second external electrode C a similar series-parallel structure may be formed. No further details are repeated redundantly herein.
  • the laminated structure 120 is produced by repeatedly using photolithography and thin film deposition steps with a plurality of consistent parameters. For example, the same etching parameters are adopted for all the odd-numbered conductive layer(s) in the laminated structure 120, and the same etching parameters are adopted for all the even-numbered conductive layer(s) in the laminated structure 120, thereby reducing alignment accuracy requirements of a plurality of conductive layers in the laminated structure 120.
  • numbers and/or sizes of isolation trenches formed on different odd-numbered conductive layers of the n conductive layers are the same; and/or numbers and/or sizes of isolation trenches formed on different even-numbered conductive layers of the n conductive layers are the same.
  • isolation trenches formed on different odd-numbered conductive layers of the n conductive layers overlap completely in the vertical direction; and/or isolation trenches formed on different even-numbered conductive layers of the n conductive layers overlap completely in the vertical direction.
  • isolation trenches provided on different conductive layers overlap completely in the vertical direction; and/or; and/or in all the even-numbered conductive layers of the n conductive layers, isolation trenches provided on different conductive layers overlap completely in the vertical direction.
  • a number of trenches provided on an odd-numbered conductive layer may be the same as or different from a number of trenches provided on an even-numbered conductive layer.
  • a number of trenches provided on an odd-numbered conductive layer is equal to a number of trenches provided on an even-numbered conductive layer.
  • the laminated structure 120 may include five conductive layers, such as the first conductive layer 1201, the second conductive layer 1202, the third conductive layer 1203, the fourth conductive layer 1204 and the fifth conductive layer 1205 shown in FIG 1 , and five dielectric layers, such as the first dielectric layer 1211, the second dielectric layer 1212, the third dielectric layer 1213, the fourth dielectric layer 1214 and the fifth dielectric layer 1215 shown in FIG 1 .
  • the first dielectric layer 1211 is provided between the semiconductor substrate 110 and the first conductive layer 1201
  • the second dielectric layer 1212 is provided between the first conductive layer 1201 and the second conductive layer 1202
  • the third dielectric layer 1312 is provided between the second conductive layer 1202 and the third conductive layer 1203
  • the fourth dielectric layer 1214 is provided between the third conductive layer 1203 and the fourth conductive layer 1204
  • the fifth dielectric layer 1215 is provided between the fourth conductive layer 1204 and the fifth conductive layer 1205.
  • the first conductive layer 1201 is provided with a first isolation trench 11
  • the second conductive layer 1202 is provided with a second isolation trench 12
  • the third conductive layer 1203 is provided with a third isolation trench 13
  • the fourth conductive layer 1204 is provided with a fourth isolation trench 14
  • the fifth conductive layer 1205 is provided with a fifth isolation trench 15.
  • the first isolation trench 11, the third isolation trench 13 and the fifth isolation trench 15 overlap completely in the vertical direction, and numbers and/or sizes of isolation trenches formed on the first conductive layer 1201, the third conductive layer 1203 and the fifth conductive layer 1205 are the same.
  • the second isolation trench 12 and the fourth isolation trench 14 overlap completely in the vertical direction, and numbers and/or sizes of isolation trenches formed on the second conductive layer 1202 and the fourth conductive layer 1204 are the same.
  • the isolation trenches provided in the odd-numbered conductive layers and the isolation trenches provided on the even-numbered conductive layers are misalignedly arranged. That is, isolation trenches in odd-numbered conductive layers have a first overlap region in the vertical direction, isolation trenches in even-numbered conductive layers have a second overlap region in the vertical direction, and the first overlap region does not overlap the second overlap region.
  • first isolation trench 11 may be as shown in FIG 2 , and the third isolation trench 13 and the fifth isolation trench 15 are similar to the first isolation trench 11.
  • the i-th conductive layer of the n conductive layers is provided with an i-th trench array around an i-th isolation trench, and the (i+1)-th conductive layer of the n conductive layers is provided in the i-th trench array.
  • a size of a trench in the i-th trench array is smaller than a size of the i-th isolation trench, and/or a depth of a trench in the i-th trench array is less than a depth of the i-th isolation trench.
  • a size of a trench in the i-th trench array may be 1 ⁇ m, and a size of the i-th isolation trench may be 5 ⁇ m, which is not limited in the present application.
  • projection positions and/or projection areas of trench arrays provided on different conductive layers on the semiconductor substrate 110 are the same.
  • numbers and/or sizes of trenches in trench arrays provided on different conductive layers are the same.
  • trench arrays formed on different conductive layers overlap completely in the vertical direction.
  • a depth and width of a trench in a trench array provided in the n conductive layers may be flexibly set according to actual needs.
  • the trench in the trench array provided in the n conductive layers has a high aspect ratio.
  • a trench array and an isolation trench provided in the same conductive layer may be formed in the same etching step.
  • trench arrays are provided in the n conductive layers, which could further increase a capacitance value of a capacitor formed in the laminated structure 120.
  • the laminated structure 120 may include four conductive layers, such as the first conductive layer 1201, the second conductive layer 1202, the third conductive layer 1203 and the fourth conductive layer 1204 shown in FIG. 3 , and four dielectric layers, such as the first dielectric layer 1211, the second dielectric layer 1212, the third dielectric layer 1213 and the fourth dielectric layer 1214 shown in FIG 3 .
  • the first dielectric layer 1211 is provided between the semiconductor substrate 110 and the first conductive layer 1201
  • the second dielectric layer 1212 is provided between the first conductive layer 1201 and the second conductive layer 1202
  • the third dielectric layer 1312 is provided between the second conductive layer 1202 and the third conductive layer 1203
  • the fourth dielectric layer 1214 is provided between the third conductive layer 1203 and the fourth conductive layer 1204.
  • the first conductive layer 1201 is provided with a first isolation trench 11 and a first trench array 21
  • the second conductive layer 1202 is provided with a second isolation trench 12 and a second trench array 22
  • the third conductive layer 1203 is provided with a third isolation trench 13 and a third trench array 23
  • the fourth conductive layer 1204 is provided with only a fourth isolation trench 14.
  • a size of a trench in the first trench array 21 is smaller than a size of the first isolation trench 11, and a depth of a trench in the first trench array 21 is less than a depth of the first isolation trench 11.
  • a size of a trench in the second trench array 22 is smaller than a size of the second isolation trench 12, and a depth of a trench in the second trench array 22 is less than a depth of the second isolation trench 12.
  • a size of a trench in the third trench array 23 is smaller than a size of the third isolation trench 13, and a depth of a trench in the third trench array 23 is less than a depth of the third isolation trench 13.
  • projection positions and/or projection areas of the first trench array 21, the second trench array 22 and the third trench array 23 on the semiconductor substrate 110 are the same. Numbers and/or sizes of trenches in the first trench array 21, the second trench array 22 and the third trench array 23 are the same. Trench arrays formed on different conductive layers may overlap completely in the vertical direction.
  • first isolation trench 11 may be as shown in FIG 2
  • third isolation trench 13 is similar to the first isolation trench 11.
  • the semiconductor substrate 110 is made of a material with a resistivity less than a threshold value, or a surface of the semiconductor substrate 110 is provided with a heavily doped conductive layer or conductive region with a resistivity less than a threshold value. That is, the semiconductor substrate 110 is conductive, or a region of the semiconductor substrate 110 in contact with the laminated structure 120 is conductive.
  • the material with a resistivity less than a threshold value may be considered as a conductive material.
  • the semiconductor substrate 110 is a heavily doped substrate.
  • the semiconductor substrate 110 may be doped to form a p++-type or n++-type low-resistivity conductive layer or conductive region.
  • a low-resistivity conductive material is deposited on the surface of the semiconductor substrate 110.
  • metal such as TiN and/or TaN and/or Pt, is deposited using a PVD or ALD process, or heavily doped polysilicon, a metal of tungsten or a carbon material is deposited using a CVD process.
  • the semiconductor substrate 110 is formed of a material with a resistivity less than a threshold value, it can be considered that the semiconductor substrate 110 is a heavily doped low-resistivity substrate; if the surface of the semiconductor substrate 110 is provided with a heavily doped conductive layer with a resistivity less than a threshold value, it can be considered that the surface of the semiconductor substrate 110 is provided with a heavily doped low-resistivity conductive layer; and if the surface of the semiconductor substrate 110 is provided with a heavily doped conductive region with a resistivity less than a threshold value, it can be considered that the surface of the semiconductor substrate 110 is provided with a heavily doped low-resistivity conductive region.
  • the second external electrode 140 is further electrically connected to the semiconductor substrate 110 through the second conductive via structure 162.
  • the second conductive via structure 162 extends into the semiconductor substrate 110 after penetrating isolation trenches in odd-numbered conductive layer(s) of the n conductive layers.
  • the second external electrode 140 is electrically connected to the semiconductor substrate 110 and all even-numbered conductive layers of the n conductive layers through the second conductive via structure 162.
  • the first conductive via structure 161 extends into the first conductive layer in the laminated structure 120 after penetrating isolation trenches in even-numbered conductive layers of the n conductive layers.
  • the capacitor 100 further includes an etching stop structure 150, the etching stop structure 150 is provided on an upper surface of the semiconductor substrate 110 to prevent the first conductive via structure 161 from being electrically connected with the semiconductor substrate 110.
  • the first conductive via structure 161 extends to an upper surface of the etching stop structure 150 after penetrating the laminated structure 120.
  • the etching stop structure 150 could effectively prevent the first conductive via structure 161 from being electrically connected with the semiconductor substrate 110.
  • a projection of the etching stop structure 150 on the semiconductor substrate 110 is larger than or equal to the second overlap region to ensure that the etching stop structure 150 could prevent the first conductive via structure 161 from being electrically connected with the semiconductor substrate 110.
  • the etching stop structure 150 is more resistant to etching than the conductive layer and the dielectric layer in the laminated structure 120.
  • a bottom of the first conductive via structure 161 may stay on the etching stop structure 150.
  • the etching stop structure 150 may be silicon oxide, silicon nitride, or silicon-containing glass such as undoped silicon glass (USG), boro-silicate glass (BSG), phospho-silicate glass (PSG), or boro-phospho-silicate glass (BPSG) deposited by a chemical vapor deposition (CVD) process; or aluminum oxide deposited by atomic layer deposition (ALD); or sprayed or spin-coated spin on glass (SOG), polyimide, or the like; or a combination of the above materials.
  • silicon oxide, silicon nitride, or silicon-containing glass such as undoped silicon glass (USG), boro-silicate glass (BSG), phospho-silicate glass (PSG), or boro-phospho-silicate glass (BPSG) deposited by a chemical vapor deposition (CVD) process; or aluminum oxide deposited by atomic layer deposition (ALD); or sprayed or spin-coated spin on glass (SOG), polyimide, or the like;
  • FIG 5 settings of FIG 5 are the same as those of FIG 4 except that the settings of the first conductive via structure 161 and the etching stop structure 150 are different. No further details are repeated redundantly for brevity.
  • the semiconductor substrate 110 includes at least one substrate trench 30, the at least one substrate trench 30 enters the semiconductor substrate 110 downward from an upper surface of the semiconductor substrate 110, and the first conductive layer of the n conductive layers is provided in the at least one substrate trench.
  • a number of trenches of the at least one substrate trench 30 is the same as a number of isolation trenches provided in an even-numbered conductive layer of the n conductive layers; and/or a size of a trench of the at least one substrate trench 30 is the same as a size of an isolation trench provided in an even-numbered conductive layer of the n conductive layers.
  • a projection of the at least one substrate trench 30 on the semiconductor substrate 110 is larger than or equal to the second overlap region.
  • the semiconductor substrate 110 further includes a substrate trench array 40 provided around the at least one substrate trench, the substrate trench array 40 enters the semiconductor substrate 110 downward from the upper surface of the semiconductor substrate 110, and the first conductive layer of the n conductive layers is provided in the substrate trench array 40.
  • a size of a trench in the substrate trench array 40 is smaller than a size of a trench of the at least one substrate trench 30, and/or a depth of a trench in the substrate trench array 40 is less than a depth of a trench of the at least one substrate trench 30.
  • the capacitor 100 further includes an interconnection structure 160, where the interconnection structure 160 includes at least one insulating layer 163, the first conductive via structure 161 and the second conductive via structure 162. As shown in FIG 1 to FIG 7 , the at least one insulating layer 163 is provided above the laminated structure 120, and the first conductive via structure 161 and the second conductive via structure 162 penetrate the at least one insulating layer 163.
  • the at least one insulating layer 163 may also be referred to as an intermetal dielectric layer (IMD) or an interlay dielectric layer (ILD).
  • IMD intermetal dielectric layer
  • ILD interlay dielectric layer
  • the first conductive via structure 161 and the second conductive via structure 162 may also be referred to as conductive channels.
  • the at least one insulating layer 163 covers the laminated structure 120, and the at least one insulating layer 163 may fill a cavity or gap formed on an upper surface of the laminated structure 120 to improve structural integrity and mechanical stability of the capacitor.
  • a material of the at least one insulating layer 163 may be an organic polymer material, including polyimide, parylene, benzocyclobutene (BCB), or the like; or some inorganic materials, including spin on glass (SOG), undoped silicon glass (USG), boro-silicate glass (BSG), phospho-silicate glass (PSG), boro-phospho-silicate glass (BPSG), a silicon oxide synthesized from tetraethyl orthosilicate (TEOS), a silicon oxide or nitride, or ceramic; or a combination or laminated layer of the above materials.
  • organic polymer material including polyimide, parylene, benzocyclobutene (BCB), or the like
  • some inorganic materials including spin on glass (SOG), undoped silicon glass (USG), boro-silicate glass (BSG), phospho-silicate glass (PSG), boro-phospho-silicate glass (BPSG), a silicon oxide synthesized from t
  • materials of the first conductive via structure 161 and the second conductive via structure 162 may be made up of a low-resistivity conductive material, such as heavily doped polysilicon, tungsten, Ti, TiN, Ta, or TaN.
  • shapes and numbers of the first conductive via structure 161 and the second via structure 162 may be specifically determined according to manufacturing processes of the capacitor 100, which is not limited in the embodiment of the present application.
  • the at least one first external electrode 130 and the at least one second external electrode 140 are provided above the laminated structure 120.
  • the capacitor 100 further includes an electrode layer provided above the laminated structure 120, the electrode layer includes at least one first conductive region and at least one second conductive region separated from each other, the first conductive region forms the first external electrode 130, and the second conductive region forms the second external electrode 140, as shown in FIG 1 to FIG 7 . That is, the at least one first external electrode 130 and the at least one second external electrode 140 may be formed by etching once, which reduces the number of etching steps.
  • the electrode layer is provided above the interconnection structure 160, the first external electrode 130 is electrically connected to an odd-numbered conductive layer(s) in the laminated structure 120 through the first conductive via structure 161, and the second external electrode 140 is electrically connected to an even-numbered conductive layer(s) in the laminated structure 120 through the second conductive via structure 162.
  • a trench capacitor is manufactured separately in a semiconductor substrate and a conductive layer, and a process of manufacturing a single capacitor may be repeatedly used, which reduces alignment accuracy requirements of a plurality of conductive layers, and could further improve a capacitance density of the capacitor without increasing the process difficulty.
  • the capacitors according to the embodiments of the present application are described above, and a method for producing a capacitor according to an embodiment of the present application will be described below.
  • the method for producing a capacitor according to the embodiment of the present application may produce the capacitors according to the foregoing embodiments of the present application, and relevant descriptions in the following embodiment and the foregoing embodiments may refer to each other.
  • a manufacturing method for a capacitor according to an embodiment of the present application will be introduced in detail hereinafter with reference to FIG 8 .
  • FIG 8 is a schematic flow chart of a manufacturing method for a capacitor according to an embodiment of the present application, but these steps or operations are merely examples, and other operations or variations of each operation in FIG 8 may also be performed in the embodiment of the present application.
  • FIG 8 illustrates a schematic flow chart of a manufacturing method 200 for a capacitor according to an embodiment of the present application.
  • the manufacturing method 200 for a capacitor includes:
  • the n-th conductive layer of the n conductive layers is provided with at least one n-th isolation trench, and the at least one n-th isolation trench divides the n-th conductive layer into at least two conductive regions electrically isolated from each other.
  • the capacitors as shown in FIG 1 to FIG 7 may be produced based on the above steps 210 to 220.
  • an upper surface of each material layer described in steps 210 to 220 refers to a surface of the material layer substantially parallel to an upper surface of the semiconductor substrate, and an inner surface of each material layer refers to an upper surface of the material layer located in a trench.
  • the upper surface and the inner surface may be regarded as a whole.
  • numbers and/or sizes of isolation trenches formed on different odd-numbered conductive layers of the n conductive layers are the same; and/or numbers and/or sizes of isolation trenches formed on different even-numbered conductive layers of the n conductive layers are the same.
  • isolation trenches formed on different odd-numbered conductive layers of the n conductive layers overlap completely in the vertical direction; and/or isolation trenches formed on different even-numbered conductive layers of the n conductive layers overlap completely in the vertical direction.
  • isolation trenches formed on different conductive layers overlap completely in the vertical direction; and/or; and/or in all the even-numbered conductive layers of the n conductive layers, isolation trenches formed on different conductive layers overlap completely in the vertical direction.
  • the same photolithography and deposition processes may be adopted for all the odd-numbered conductive layer(s) of the n conductive layers, the same photolithography and deposition processes may be adopted for all the even-numbered conductive layer(s) of the n conductive layers, and thus the process complexity and processing costs could be reduced.
  • the i-th conductive layer of the n conductive layers is provided with an i-th trench array around an i-th isolation trench, and the (i+1)-th conductive layer of the n conductive layers is provided in the i-th trench array. That is, the n-th conductive layer of the n conductive layers is not provided with a trench array.
  • a size of a trench in the i-th trench array is smaller than a size of the i-th isolation trench, and/or a depth of a trench in the i-th trench array is less than a depth of the i-th isolation trench.
  • a size of a trench in the i-th trench array may be 1 ⁇ m, and a size of the i-th isolation trench may be 5 ⁇ m, which is not limited in the present application.
  • the depth of the i-th isolation trench is deeper than that of the i-th trench array. That is, the i-th trench array does not penetrate the i-th conductive layer.
  • numbers and/or sizes of trenches in trench arrays formed on different conductive layers are the same.
  • trench arrays formed on different conductive layers overlap completely in the vertical direction.
  • the same etching parameters may be adopted so that numbers and/or sizes of trenches in trench arrays formed on different conductive layers are the same.
  • numbers and/or sizes of trenches in trench arrays formed on different conductive layers may be different.
  • a number and/or sizes of trenches in a trench array formed on an odd-numbered conductive layer is different from a number and/or sizes of trenches in a trench array formed on an even-numbered conductive layer, which is not limited in the embodiment of the present application.
  • the second external electrode 140 is further electrically connected to the semiconductor substrate 110 through the second conductive via structure 162. That is, the semiconductor substrate 110 is conductive, or a region of the semiconductor substrate 110 in contact with the laminated structure 120 is conductive.
  • the semiconductor substrate 110 is formed of a material with a resistivity less than a threshold value, or a surface of the semiconductor substrate 110 is provided with a heavily doped conductive layer or conductive region with a resistivity less than a threshold value.
  • the second conductive via structure 162 extends into the semiconductor substrate 110 after penetrating an isolation trench in an odd-numbered conductive layer of the n conductive layers, and the second external electrode 140 is electrically connected to the semiconductor substrate 110 and all the even-numbered conductive layer(s) of the n conductive layers through the second conductive via structure 162.
  • the first conductive via structure 161 extends into the first conductive layer in the laminated structure 120 after penetrating an isolation trench in an even-numbered conductive layer of the n conductive layers.
  • the method 200 further includes: producing an etching stop structure 150, where the etching stop structure 150 is provided on an upper surface of the semiconductor substrate 110 to prevent the first conductive via structure 161 from being electrically connected with the semiconductor substrate 110.
  • the etching stop structure 150 may prevent the first conductive via structure 161 from extending into the semiconductor substrate 110.
  • the etching stop structure 150 could effectively prevent the first conductive via structure 161 from being electrically connected with the semiconductor substrate 110.
  • a projection of the etching stop structure 150 on the semiconductor substrate 110 is larger than or equal to the second overlap region to ensure that the etching stop structure 150 could prevent the first conductive via structure 161 from being electrically connected with the semiconductor substrate 110.
  • the method 200 further includes: producing at least one substrate trench 30 on the semiconductor substrate 110, where the at least one substrate trench 30 enters the semiconductor substrate 110 downward from an upper surface of the semiconductor substrate 110, and the first conductive layer of the n conductive layers is provided in the at least one substrate trench.
  • the first conductive via structure 161 extends into the at least one substrate trench 30, and thus the at least one substrate trench 30 may prevent the first conductive via structure 161 from extending into the semiconductor substrate 110.
  • the at least one substrate trench 30 could effectively prevent the first conductive via structure 161 from being electrically connected with the semiconductor substrate 110.
  • a number of trenches of the at least one substrate trench 30 is the same as a number of isolation trenches provided in an even-numbered conductive layer of the n conductive layers; and/or a size of a trench of the at least one substrate trench 30 is the same as a size of an isolation trench provided in an even-numbered conductive layer of the n conductive layers.
  • a projection of the at least one substrate trench 30 on the semiconductor substrate 110 is larger than or equal to the second overlap region.
  • the method 200 further includes: producing a substrate trench array 40 provided around the at least one substrate trench 30 on the semiconductor substrate 110, where the substrate trench array 40 enters the semiconductor substrate 110 downward from the upper surface of the semiconductor substrate 110, and the first conductive layer of the n conductive layers is provided in the substrate trench array 40.
  • a size of a trench in the substrate trench array 40 is smaller than a size of a trench of the at least one substrate trench 30, and/or a depth of a trench in the substrate trench array 40 is less than a depth of a trench of the at least one substrate trench 30.
  • the foregoing step 220 may specifically be: producing an electrode layer above the laminated structure 120, where the electrode layer includes at least one first conductive region and at least one second conductive region separated from each other, the first conductive region forms the first external electrode 130, and the second conductive region forms the second external electrode 140.
  • the method 200 further includes: producing an interconnection structure 160, where the interconnection structure 160 includes at least one insulating layer 163, the first conductive via structure 161 and the second conductive via structure 162, the at least one insulating layer 163 is provided above the laminated structure 120, and the first conductive via structure 161 and the second conductive via structure 162 penetrate the at least one insulating layer 163.
  • the laminated structure 120 includes: the first conductive layer 1201, the second conductive layer 1202, the third conductive layer 1203, the fourth conductive layer 1204 and the fifth conductive layer 1205; and the first dielectric layer 1211, the second dielectric layer 1212, the third dielectric layer 1213, the fourth dielectric layer 1214 and the fifth dielectric layer 1215.
  • the foregoing step 210 and step 220 may specifically be producing flows as shown in step 1a to step 1n ( FIG 9a to FIG 9n ) to produce the capacitor 100 as shown in FIG 5 .
  • the capacitors 100 as shown in FIG 1 and FIG 4 may also be produced, and reference may be made to the producing flows of a capacitor as shown in step 1a to step 1n ( FIG 9a to FIG 9n ). No further details are repeated redundantly herein for brevity.
  • Step 1a a heavily doped monocrystalline silicon wafer is selected as a semiconductor substrate 110, as shown in FIG 9a , that is, the semiconductor substrate 110 is conductive.
  • Step 1b an etching stop layer is deposited on an upper surface of the semiconductor substrate 110 as shown in FIG 9a , and photolithography processing is performed to form an etching stop structure 150, as shown in FIG. 9b .
  • Step 1c the first dielectric layer 1211 is deposited on the upper surface of the semiconductor substrate 110 and an upper surface of the etching stop structure 150, and the first conductive layer 1201 is deposited on an upper surface of the first dielectric layer 1211, as shown in FIG 9c .
  • Step 1d a mask layer of a pattern A is formed on an upper surface of the first conductive layer 1201 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a first isolation trench 11 is then produced on the first conductive layer 1201 using an etching process, the first isolation trench 11 divides the first conductive layer 1201 into two conductive regions electrically isolated from each other, as shown in FIG 9d , and a top view of the first isolation trench 11 may be as shown in FIG 2 .
  • Step 1e first, the second dielectric layer 1212 is deposited on the upper surface of the first conductive layer 1201 and side walls and a bottom of the first isolation trench 11, the second dielectric layer 1212 and the first conductive layer 1201 are conformal, then, the second conductive layer 1202 is deposited on an upper surface and an inner surface of the second dielectric layer 1212, and the second conductive layer 1202 fills the first isolation trench 11, as shown in FIG 9e .
  • Step 1f a mask layer of a pattern B is formed on an upper surface of the second conductive layer 1202 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a second isolation trench 12 is then produced on the second conductive layer 1202 using the etching process, and the second isolation trench 12 divides the second conductive layer 1202 into two conductive regions electrically isolated from each other, as shown in FIG 9f .
  • Step 1g first, the third dielectric layer 1213 is deposited on the upper surface of the second conductive layer 1202 and side walls and a bottom of the second isolation trench 12, the third dielectric layer 1213 and the second conductive layer 1202 are conformal, then, the third conductive layer 1203 is deposited on an upper surface and an inner surface of the third dielectric layer 1213, and the third conductive layer 1203 fills the second isolation trench 12, as shown in FIG. 9g .
  • Step 1h a mask layer of the pattern A is formed on an upper surface of the third conductive layer 1203 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a third isolation trench 13 is then produced on the third conductive layer 1203 using the etching process, and the third isolation trench 13 divides the third conductive layer 1203 into two conductive regions electrically isolated from each other, as shown in FIG 9h .
  • Step 1i first, the fourth dielectric layer 1214 is deposited on the upper surface of the third conductive layer 1203 and side walls and a bottom of the third isolation trench 13, the fourth dielectric layer 1214 and the third conductive layer 1203 are conformal, then, the fourth conductive layer 1204 is deposited on an upper surface and an inner surface of the fourth dielectric layer 1214, and the fourth conductive layer 1204 fills the third isolation trench 13, as shown in FIG 9i .
  • Step 1j a mask layer of the pattern B is formed on an upper surface of the fourth conductive layer 1204 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a fourth isolation trench 14 is then produced on the fourth conductive layer 1204 using the etching process, and the fourth isolation trench 14 divides the fourth conductive layer 1204 into two conductive regions electrically isolated from each other, as shown in FIG 9j .
  • Step 1k first, the fifth dielectric layer 1215 is deposited on the upper surface of the fourth conductive layer 1204 and side walls and a bottom of the fourth isolation trench 14, the fifth dielectric layer 1215 and the fourth conductive layer 1204 are conformal, then, the fifth conductive layer 1205 is deposited on an upper surface and an inner surface of the fifth dielectric layer 1215, and the fifth conductive layer 1205 fills the fourth isolation trench 14, as shown in FIG 9k .
  • Step 11 a mask layer of the pattern A is formed on an upper surface of the fifth conductive layer 1205 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a fifth isolation trench 15 is then produced on the fifth conductive layer 1205 using the etching process, and the fifth isolation trench 15 divides the fifth conductive layer 1205 into two conductive regions electrically isolated from each other, as shown in FIG 91.
  • Step 1m an insulating layer 163 is deposited on the upper surface of the fifth conductive layer 1205 and in the fifth isolation trench 15, as shown in FIG 9m ; a first conductive via structure 161 and a second conductive via structure 162 are produced using the etching process and a deposition process; the first conductive via structure 161 penetrates the second isolation trench 12 and the fourth isolation trench 14, and extends to the upper surface of the etching stop structure 150; the second conductive via structure 162 penetrates the first isolation trench 11, the third isolation trench 13 and the fifth isolation trench 15, and extends into the semiconductor substrate 110; and thus an interconnection structure 160 is produced, as shown in FIG 9n .
  • Step 1n a first external electrode 130 and a second external electrode 140 are produced above the interconnection structure 160, where the first external electrode 130 is electrically connected to all odd-numbered conductive layer(s) of n conductive layers through the first conductive via structure 161, and the second external electrode 140 is electrically connected to the semiconductor substrate 110 and all even-numbered conductive layer(s) of the n conductive layers through the second conductive via structure 162, as shown in FIG 5 .
  • the laminated structure 120 includes: the first conductive layer 1201, the second conductive layer 1202, the third conductive layer 1203 and the fourth conductive layer 1204; and the first dielectric layer 1211, the second dielectric layer 1212, the third dielectric layer 1213 and the fourth dielectric layer 1214.
  • the foregoing step 210 and step 220 may specifically be producing flows as shown in step 2a to step 21 ( FIG 10a to FIG 10l ) to produce the capacitor 100 as shown in FIG 7 .
  • the capacitors 100 as shown in FIG 3 and FIG 6 may also be produced, and reference may be made to the producing flows of a capacitor as shown in step 2a to step 2l ( FIG 10a to FIG 10l ). No further details are repeated redundantly herein for brevity.
  • Step 2a a high-resistance silicon wafer is selected as a semiconductor substrate 110, as shown in FIG 10a .
  • Step 2b a layer of photoresist is spin-coated on an upper surface of the semiconductor substrate 110 as shown in FIG 10a , after exposure and development, a substrate trench 30 and a substrate trench array 40 are manufactured using dry etching, and a heavily doped conductive region is formed on inner walls of the substrate trench 30, inner walls of the substrate trench array 40 and the upper surface of the semiconductor substrate 110 using a high-temperature diffusion process, as shown in FIG 10b .
  • Step 2c the first dielectric layer 1211 is deposited on the upper surface of the semiconductor substrate 110 and in the substrate trench 30 and the substrate trench array 40, the first conductive layer 1201 is deposited on an upper surface of the first dielectric layer 1211, the first dielectric layer 1211 and the semiconductor substrate 110 are conformal, and the first conductive layer 1201 fills the substrate trench 30 and the substrate trench array 40, as shown in FIG 10c .
  • Step 2d a mask layer of a pattern A is formed on an upper surface of the first conductive layer 1201 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a first isolation trench 11 and a first trench array 21 are then produced on the first conductive layer 1201 using an etching process, the first isolation trench 11 divides the first conductive layer 1201 into two conductive regions electrically isolated from each other, a size of a trench in the first trench array 21 is smaller than a size of the first isolation trench 11, a depth of a trench in the first trench array 21 is less than a depth of the first isolation trench 11, as shown in FIG 10d , and a top view of the first isolation trench 11 may be as shown in FIG 2 .
  • Step 2e first, the second dielectric layer 1212 is deposited on the upper surface of the first conductive layer 1201, side walls and a bottom of the first isolation trench 11 and side walls and bottoms of the first trench array 21, the second dielectric layer 1212 and the first conductive layer 1201 are conformal, then, the second conductive layer 1202 is deposited on an upper surface and an inner surface of the second dielectric layer 1212, and the second conductive layer 1202 fills the first isolation trench 11 and the first trench array 21, as shown in FIG 10e .
  • Step 2f a mask layer of a pattern B is formed on an upper surface of the second conductive layer 1202 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a second isolation trench 12 and a second trench array 22 are then produced on the second conductive layer 1202 using the etching process, the second isolation trench 12 divides the second conductive layer 1202 into two conductive regions electrically isolated from each other, a size of a trench in the second trench array 22 is smaller than a size of the second isolation trench 12, and a depth of a trench in the second trench array 22 is less than a depth of the second isolation trench 12, as shown in FIG 10f .
  • Step 2g first, the third dielectric layer 1213 is deposited on the upper surface of the second conductive layer 1202, side walls and a bottom of the second isolation trench 12 and side walls and bottoms of the second trench array 22, the third dielectric layer 1213 and the second conductive layer 1202 are conformal, then, the third conductive layer 1203 is deposited on an upper surface and an inner surface of the third dielectric layer 1213, and the third conductive layer 1203 fills the second isolation trench 12 and the second trench array 22, as shown in FIG 10g .
  • Step 2h a mask layer of the pattern A is formed on an upper surface of the third conductive layer 1203 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, a third isolation trench 13 and a third trench array 23 are then produced on the third conductive layer 1203 using the etching process, the third isolation trench 13 divides the third conductive layer 1203 into two conductive regions electrically isolated from each other, a size of a trench in the third trench array 23 is smaller than a size of the third isolation trench 13, and a depth of a trench in the third trench array 23 is less than a depth of the third isolation trench 13, as shown in FIG 10h .
  • Step 2i first, the fourth dielectric layer 1214 is deposited on the upper surface of the third conductive layer 1203, side walls and a bottom of the third isolation trench 13 and side walls and bottoms of the third trench array 23, the fourth dielectric layer 1214 and the third conductive layer 1203 are conformal, then, the fourth conductive layer 1204 is deposited on an upper surface and an inner surface of the fourth conductive layer 1214, and the fourth conductive layer 1204 fills the third isolation trench 13 and the third trench array 23, as shown in FIG. 10i .
  • Step 1j a mask layer of a pattern C is formed on an upper surface of the fourth conductive layer 1204 using graphic techniques such as photolithography, nanoimprinting, or laser direct writing, the pattern C lacks only a pattern related to a trench array compared with the pattern B, a fourth isolation trench 14 is then produced on the fourth conductive layer 1204 using the etching process, and the fourth isolation trench 14 divides the fourth conductive layer 1204 into two conductive regions electrically isolated from each other, as shown in FIG 10j .
  • Step 2k an insulating layer 163 is deposited on the upper surface of the fourth conductive layer 1204 and in the fourth isolation trench 14, as shown in FIG 10k ; a first conductive via structure 161 and a second conductive via structure 162 are produced using the etching process and a deposition process; the first conductive via structure 161 penetrates the second isolation trench 12 and the fourth isolation trench 14, and extends into the substrate trench 30; the second conductive via structure 162 penetrates the first isolation trench 11 and the third isolation trench 13, and extends into the heavily doped conductive region formed on the semiconductor substrate 110 by diffusion; and thus an interconnection structure 160 is produced, as shown in FIG 10l .
  • Step 2l a first external electrode 130 and a second external electrode 140 are produced above the interconnection structure 160, where the first external electrode 130 is electrically connected to all odd-numbered conductive layer(s) of n conductive layers through the first conductive via structure 161, and the second external electrode 140 is electrically connected to the semiconductor substrate 110 and all even-numbered conductive layer(s) of the n conductive layers through the second conductive via structure 162, as shown in FIG. 7 .
  • a trench capacitor is produced in conductive layers in a laminated structure, and photolithography and thin film deposition steps with a plurality of consistent parameters are repeatedly used, which reduces alignment accuracy requirements of a plurality of conductive layers in the laminated structure, and could increase a number of stacked capacitor layers while maintaining low processing costs, and further increase a capacitance density of the capacitor.
  • the manufacturing method for a capacitor according to the present application will be further described below with reference to two specific embodiments.
  • the capacitor as shown in FIG 5 is manufactured in embodiment one.
  • the capacitors as shown in FIG 1 and FIG 4 may also be manufactured using a manufacturing method for a capacitor in embodiment one, but there is slightly different in parts, such as a setting of a laminated structure or a semiconductor substrate. No further details are repeated redundantly herein for brevity.
  • the capacitor as shown in FIG 7 is manufactured in embodiment two.
  • the capacitors as shown in FIG 3 and FIG 6 may also be manufactured using a manufacturing method for a capacitor in embodiment two, but there is slightly different in parts, such as a setting of a laminated structure or a semiconductor substrate. No further details are repeated redundantly herein for brevity.
  • Step one a heavily doped monocrystalline silicon wafer is selected as a substrate.
  • Step two a layer of silicon carbide (SiC) is deposited on a surface of the substrate as an etching stop layer, and photolithography processing is performed to form an etching stop structure.
  • SiC silicon carbide
  • Step three first, using a low pressure chemical vapor deposition (LPCVD) process, a layer of silicon oxynitride (SiON) is deposited on the surface of the substrate as a first dielectric layer. Next, using the LPCVD process, a layer of heavily doped polysilicon is deposited as a first conductive layer.
  • LPCVD low pressure chemical vapor deposition
  • Step four a layer of photoresist is spin-coated on a surface of the first conductive layer, and after exposure and development, a first isolation trench is manufactured using dry etching. The first isolation trench divides the first conductive layer into two regions electrically isolated.
  • Step five a layer of SiON is deposited on the surface of the first conductive layer and side walls and a bottom of the first isolation trench as a second dielectric layer.
  • a layer of heavily doped polysilicon is deposited as a second conductive layer, and the second conductive layer fills the first isolation trench.
  • Step six a layer of photoresist is spin-coated on a surface of the second conductive layer, and after exposure and development, a second isolation trench is manufactured using the dry etching. The second isolation trench is aligned with the etching stop structure formed in step two.
  • Step seven step three to step six are repeated several times.
  • Step eight using a plasma enhanced chemical vapor deposition (PECVD) process, a layer of silicon oxide is deposited on a surface of an n conductive layer as an intermetal dielectric layer.
  • PECVD plasma enhanced chemical vapor deposition
  • Step nine a layer of photoresist is spin-coated on a surface of the intermetal dielectric layer, and after exposure and development, two conductive vias are manufactured using the dry etching. One of the conductive vias penetrates odd-numbered isolation trenches, and its depth reaches the substrate; and the other conductive via penetrates even-numbered isolation trenches to stay on the etching stop structure.
  • Step ten first, using a metal-organic chemical vapor deposition (MOCVD) process, the conductive vias are filled with a metal of tungsten to form vertical conductive channels. Next, excess tungsten on the surface is removed using a chemical mechanical polish (CMP) process. Then, a layer of Ti/TiN and a layer of Al are deposited by physical vapor deposition (PVD), and finally, two electrodes are formed by photolithography.
  • MOCVD metal-organic chemical vapor deposition
  • CMP chemical mechanical polish
  • PVD physical vapor deposition
  • Step one a high-resistance silicon wafer is selected as a substrate.
  • Step two a layer of photoresist is spin-coated on a surface of the wafer, and after exposure and development, a substrate trench and a substrate trench array are manufactured using dry etching. Since a size of an opening of the substrate trench is larger than a size of an opening of the substrate trench array, when trenches with two sizes are formed simultaneously by the dry etching, a depth of the substrate trench is deeper than that of the substrate trench array.
  • BSG boro-silicate glass
  • a heavily doped conductive zone is formed on inner walls of the substrate trench and the substrate trench array and the surface of the substrate using a high-temperature diffusion process. Finally, the BGS is removed.
  • Step three first, using an atomic layer deposition (ALD) process, a layer of Al2O3 is deposited as a first dielectric layer, and next, using an LPCVD process, a thick layer of heavily doped polysilicon is deposited to fill the substrate trench and the substrate trench array as a first conductive layer.
  • ALD atomic layer deposition
  • Step four a layer of photoresist is spin-coated on a surface of the first conductive layer, and after exposure and development, a first isolation trench and a first trench array are manufactured using the dry etching. A depth of the first isolation trench reaches the first dielectric layer, and the first isolation trench divides the first conductive layer into two regions electrically isolated; and the first trench array is located inside the first conductive layer.
  • Step five first, using the ALD process, a layer of Al2O3 is deposited as a second dielectric layer, and next, using the LPCVD process, a thick layer of heavily doped polysilicon is deposited to fill the first isolation trench and the first trench array as a second conductive layer.
  • Step six a layer of photoresist is spin-coated on a surface of the second conductive layer, and after exposure and development, a second isolation trench and a second trench array are manufactured using the dry etching. A depth of the second isolation trench reaches the second dielectric layer; and the second trench array is located inside the second conductive layer.
  • Step seven step three to step six are repeated, and a third dielectric layer, a third conductive layer, a third isolation trench and a third trench array are sequentially manufactured.
  • Step eight first, using the ALD process, a layer of Al2O3 is deposited as a fourth dielectric layer, and next, using the LPCVD process, a thick layer of heavily doped polysilicon is deposited to fill the third isolation trench and the third trench array as a fourth conductive layer.
  • Step nine using photolithography and etching processes, a fourth isolation trench is formed on the fourth conductive layer, and a depth of the trench reaches the fourth dielectric layer.
  • Step ten using a PECVD process, a layer of silicon oxide is deposited on a surface of the fourth conductive layer as an intermetal dielectric layer.
  • Step eleven a layer of photoresist is spin-coated on a surface of the intermetal dielectric layer, and after exposure and development, two conductive vias are manufactured using the dry etching.
  • One of the conductive vias vertically penetrates odd-numbered isolation trenches, and its depth reaches the substrate trench filled with the first conductive layer; and the other conductive via penetrates even-numbered isolation trenches, and its depth reaches the heavily doped conductive zone formed on the substrate by diffusion.
  • Step twelve first, using an MOCVD process, the conductive vias are filled with a metal of tungsten to form vertical conductive channels. Next, excess tungsten on the surface is removed using a CMP process. Then, a layer of Ti/TiN and a layer of Al are deposited by PVD, and finally, two electrodes are formed by photolithography.

Claims (15)

  1. Condensateur, le condensateur comprenant :
    un substrat semi-conducteur (110) ;
    une structure en couches (120) prévue au-dessus du substrat semi-conducteur (110) et comprenant des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) et une ou des couches diélectriques à m couches (1211, 1212, 1213, 1214, 1215), dans la structure en couches (120), un ordre de la ou des couches diélectriques à m couches (1211, 1212, 1213, 1214, 1215) étant un ordre croissant de distances par rapport au substrat semi-conducteur (110), et un ordre des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) étant un ordre croissant de distances par rapport au substrat semi-conducteur (110), deux couches conductrices adjacentes des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) étant isolées électriquement par une couche diélectrique de la ou des couches diélectriques à m couches (1211, 1212, 1213, 1214, 1215), une i-ième couche conductrice (1201, 1202, 1203, 1204) des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) étant pourvue d'au moins une tranchée d'isolation (11, 12, 13, 14) pénétrant la i-ième couche conductrice (1201, 1202, 1203, 1204), la i-ième couche conductrice (1201, 1202, 1203, 1204) étant divisée en au moins deux régions conductrices isolées électriquement l'une de l'autre par l'au moins une tranchée d'isolation de la i-ième couche conductrice (1201, 1202, 1203, 1204), la (i+1)-ième couche conductrice des couches conductrices à n couches étant prévue au-dessus de la i-ième couche conductrice et dans l'au moins une tranchée d'isolation de la i-ième couche conductrice, des tranchées d'isolation (11, 13, 15) dans des couches conductrices impaires (1201, 1203, 1205) ayant une première région de chevauchement dans une direction verticale, des tranchées d'isolation (12, 14) dans des couches conductrices paires (1202, 1204) ayant une deuxième région de chevauchement dans la direction verticale, et la première région de chevauchement ne chevauchant pas la deuxième région de chevauchement, avec m, n, et i étant des entiers positifs, n ≥ 2, et 1 ≤ i ≤ n-1 ;
    au moins une première électrode externe (130) étant connectée électriquement à toutes les couches conductrices impaires (1201, 1203, 1205) des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) par l'intermédiaire d'une première structure de trous d'interconnexion conducteurs (161), la première structure de trous d'interconnexion conducteurs (161) étant prévue dans la deuxième région de chevauchement ; et
    au moins une deuxième électrode externe (140) étant connectée électriquement à toutes les couches conductrices paires (1202, 1204) des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) par l'intermédiaire d'une deuxième structure de trous d'interconnexion conducteurs (162), la deuxième structure de trous d'interconnexion conducteurs (162) étant prévue dans la première région de chevauchement.
  2. Condensateur selon la revendication 1, la n-ième couche conductrice (1205) des n couches conductrices (1201, 1202, 1203, 1204, 1205) étant pourvue d'au moins une n-ième tranchée d'isolation (15), et l'au moins une n-ième tranchée d'isolation (15) divisant la n-ième couche conductrice (1205) en au moins deux régions conductrices électriquement isolées l'une de l'autre.
  3. Condensateur selon la revendication 1 ou 2,
    des nombres de tranchées d'isolation formées sur différentes couches conductrices impaires (1201, 1203, 1205) des couches conductrices à n couches étant les mêmes, et des tailles des tranchées d'isolation formées sur différentes couches conductrices impaires (1201, 1203, 1205) des couches conductrices à n couches étant les mêmes ; ou
    des nombres de tranchées d'isolation formées sur les différentes couches conductrices paires (1202, 1204) des couches conductrices à n couches étant les mêmes, et des tailles des tranchées d'isolation formées sur les différentes couches conductrices impaires (1201, 1203, 1205) des couches conductrices à n couches étant les mêmes ; ou
    des tranchées d'isolation formées sur différentes couches conductrices impaires (1201, 1203, 1205) des couches conductrices à n couches se chevauchant complètement dans la direction verticale ; ou
    des tranchées d'isolation formées sur différentes couches conductrices paires (1202, 1204) des couches conductrices à n couches se chevauchant complètement dans la direction verticale.
  4. Condensateur selon l'une quelconque des revendications 1 à 3, la i-ième couche conductrice des couches conductrices à n couches (1201, 1202, 1203, 1204) étant pourvue d'un réseau de tranchées autour de l'au moins une tranchée d'isolation de la i-ième couche conductrice, et la (i+1)-ième couche conductrice des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) étant prévue dans le réseau de tranchées de la i-ième couche conductrice, une taille d'une tranchée dans le réseau de tranchées étant inférieure à une taille de l'au moins une tranchée d'isolation de la i-ième couche conductrice, ou une profondeur d'une tranchée dans le réseau de tranchées étant inférieure à une profondeur de l'au moins une tranchée d'isolation de la i-ième couche conductrice.
  5. Condensateur selon la revendication 4, dans les couches conductrices à n couches (1201, 1202, 1203, 1204, 1205), des nombres ou des tailles de tranchées dans des réseaux de tranchées formés sur différentes couches conductrices étant les mêmes, et des réseaux de tranchées formés sur différentes couches conductrices se chevauchant complètement dans la direction verticale.
  6. Condensateur selon l'une quelconque des revendications 1 à 5, la deuxième électrode externe (140) étant en outre connectée électriquement au substrat semi-conducteur (110) par l'intermédiaire de la deuxième structure de trous d'interconnexion conducteurs (162), le substrat semi-conducteur (110) étant formé d'un matériau dont la résistivité est inférieure à une valeur seuil, ou une surface du substrat semi-conducteur (110) étant pourvue d'une couche conductrice fortement dopée ou d'une région conductrice dont la résistivité est inférieure à une valeur seuil.
  7. Condensateur selon la revendication 6, le condensateur comprenant en outre : une structure d'arrêt de gravure (150) prévue sur une surface supérieure du substrat semi-conducteur (110) pour empêcher la première structure de trous d'interconnexion conducteurs (161) d'être connectée électriquement avec le substrat semi-conducteur (110), et une projection de la structure d'arrêt de gravure (150) sur le substrat semi-conducteur (110) étant plus grande ou égale à la deuxième région de chevauchement.
  8. Condensateur selon l'une quelconque des revendications 1 à 7, le substrat semi-conducteur (110) comprenant au moins une tranchée de substrat, l'au moins une tranchée de substrat pénétrant dans le substrat semi-conducteur vers le bas à partir d'une surface supérieure du substrat semi-conducteur (110), et la première couche conductrice (1201) des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) étant prévue dans l'au moins une tranchée de substrat.
  9. Condensateur selon la revendication 8,
    un nombre de tranchées de l'au moins une tranchée de substrat étant le même qu'un nombre de tranchées d'isolation prévues dans une couche conductrice paire (1202, 1204) des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) ; ou
    une taille d'une tranchée de l'au moins une tranchée de substrat étant la même qu'une taille d'une tranchée d'isolation prévue dans une couche conductrice paire (1202, 1204) des couches conductrices à n couches (1201, 1202, 1203, 1204, 1205) ; et une projection de l'au moins une tranchée de substrat sur le substrat semi-conducteur (110) étant supérieure ou égale à la deuxième région de chevauchement.
  10. Condensateur selon la revendication 8 ou 9, le substrat semi-conducteur (110) comprenant en outre un réseau de tranchées de substrat prévu autour de l'au moins une tranchée de substrat, le réseau de tranchées de substrat pénétrant dans le substrat semi-conducteur (110) vers le bas à partir de la surface supérieure du substrat semi-conducteur (110), et la première couche conductrice (1201) des couches conductrices à n couches étant prévue dans le réseau de tranchées de substrat, une taille d'une tranchée dans le réseau de tranchées de substrat étant plus petite qu'une taille d'une tranchée de l'au moins une tranchée de substrat, et une profondeur d'une tranchée dans le réseau de tranchées de substrat étant plus petite qu'une profondeur d'une tranchée de l'au moins une tranchée de substrat.
  11. Condensateur selon l'une quelconque des revendications 1 à 10, le condensateur comprenant en outre :
    une couche d'électrode prévue au-dessus de la structure en couches (120), la couche d'électrode comprenant au moins une première région conductrice et au moins une deuxième région conductrice séparées l'une de l'autre, la première région conductrice formant la première électrode externe (130), et la deuxième région conductrice formant la deuxième électrode externe (140).
  12. Condensateur selon l'une quelconque des revendications 1 à 11, le condensateur comprenant en outre : une structure d'interconnexion comprenant au moins une couche isolante (163), la première structure de trous d'interconnexion conducteurs (161) et la deuxième structure de trous d'interconnexion conducteurs (162), l'au moins une couche isolante (163) étant prévue au-dessus de la structure en couches (120), et la première structure de trous d'interconnexion conducteurs (161) et la deuxième structure de trous d'interconnexion conducteurs (162) pénétrant dans l'au moins une couche isolante (163).
  13. Condensateur selon l'une quelconque des revendications 1 à 12, la couche conductrice comprenant au moins l'un des éléments suivants :
    une couche de polysilicium fortement dopé, une couche de carbone, une couche d'aluminium, une couche de cuivre, une couche de tungstène, une couche de titane, une couche de tantale, une couche de platine, une couche de nickel, une couche de ruthénium, une couche d'iridium, une couche de rhodium, une couche de nitrure de tantale, une couche de nitrure de titane, une couche de nitrure d'aluminium et de titane, une couche de nitrure de silicium et de tantale, ou une couche de nitrure de carbone et de tantale ; et la couche diélectrique comprenant au moins l'une des couches suivantes :
    une couche d'oxyde de silicium, une couche de nitrure de silicium, une couche d'oxynitrure de silicium, une couche d'oxyde métallique, une couche de nitrure métallique ou une couche d'oxynitrure métallique.
  14. Procédé de fabrication d'un condensateur selon l'une quelconque des revendications 1 à 13, comprenant :
    (1a) fourniture d'un substrat semi-conducteur ;
    (1c) dépôt d'une première couche diélectrique sur la surface supérieure du substrat semi-conducteur, et dépôt d'une première couche conductrice sur une surface supérieure de la première couche diélectrique ;
    (1d) formation d'une couche de masque avec un motif et production d'une première tranchée d'isolation sur la première couche conductrice, la première couche conductrice étant divisée en deux régions conductrices isolées électriquement l'une de l'autre par la première tranchée d'isolation, et la première tranchée d'isolation pénétrant dans la première couche conductrice ;
    (1e) dépôt d'une deuxième couche diélectrique sur la surface supérieure de la première couche conductrice et sur les parois latérales et un fond de la première tranchée d'isolation, la deuxième couche diélectrique et la première couche conductrice étant conformes, et dépôt de la deuxième couche conductrice sur une surface supérieure et une surface interne de la deuxième couche diélectrique, la première tranchée d'isolation étant remplie de la deuxième couche conductrice ;
    (1f) formation d'une couche de masque avec un motif et production d'une deuxième tranchée d'isolation sur la deuxième couche conductrice, la deuxième couche conductrice étant divisée en deux régions conductrices isolées électriquement l'une de l'autre par la deuxième tranchée d'isolation, et la deuxième tranchée d'isolation pénétrant dans la deuxième couche conductrice ;
    (1g) dépôt d'une troisième couche diélectrique sur la surface supérieure de la deuxième couche conductrice et sur les parois latérales et un fond de la deuxième tranchée d'isolation, la troisième couche diélectrique et la deuxième couche conductrice étant conformes, et dépôt de la troisième couche conductrice sur une surface supérieure et une surface intérieure de la troisième couche diélectrique, la deuxième tranchée d'isolation étant remplie de la troisième couche conductrice ;
    (1h) formation d'une couche de masque avec un motif et production d'une troisième tranchée d'isolation sur la troisième couche conductrice, la troisième couche conductrice étant divisée en deux régions conductrices isolées électriquement l'une de l'autre par la troisième tranchée d'isolation, et la troisième tranchée d'isolation pénétrant dans la troisième couche conductrice ;
    (11) dépôt d'une quatrième couche diélectrique sur la surface supérieure de la troisième couche conductrice et sur les parois latérales et un fond de la troisième tranchée d'isolation, la quatrième couche diélectrique et la troisième couche conductrice étant conformes, et dépôt de la quatrième couche conductrice sur une surface supérieure et une surface intérieure de la quatrième couche diélectrique, la troisième tranchée d'isolation étant remplie de la quatrième couche conductrice ;
    (1j) formation d'une couche de masque avec un motif et production d'une quatrième tranchée d'isolation sur la quatrième couche conductrice, la quatrième couche conductrice étant divisée en deux régions conductrices isolées électriquement l'une de l'autre par la quatrième tranchée d'isolation, et la quatrième tranchée d'isolation pénétrant dans la quatrième couche conductrice ;
    (1k) dépôt d'une cinquième couche diélectrique sur la surface supérieure de la quatrième couche conductrice et sur les parois latérales et un fond de la quatrième tranchée d'isolation, la cinquième couche diélectrique et la quatrième couche conductrice étant conformes, et dépôt de la cinquième couche conductrice sur une surface supérieure et une surface intérieure de la cinquième couche diélectrique, la quatrième tranchée d'isolation étant remplie de la cinquième couche conductrice ;
    (11) formation d'une couche de masque avec un motif et production d'une cinquième tranchée d'isolation sur la cinquième couche conductrice, la cinquième couche conductrice étant divisée en deux régions conductrices isolées électriquement l'une de l'autre par la cinquième tranchée d'isolation, et la cinquième tranchée d'isolation pénétrant dans la cinquième couche conductrice ;
    (1m) production d'une structure d'interconnexion comprenant une première structure de trous d'interconnexion conducteurs et une deuxième structure de trous d'interconnexion conducteurs, la première structure de trous d'interconnexion conducteurs pénétrant la deuxième tranchée d'isolation et la quatrième tranchée d'isolation, la deuxième structure de trous d'interconnexion conducteurs pénétrant la première tranchée d'isolation, la troisième tranchée d'isolation et la cinquième tranchée d'isolation ;
    (1n) production d'une première électrode externe et d'une deuxième électrode externe au-dessus de la structure d'interconnexion, la première électrode externe étant connectée électriquement à la première couche conductrice, à la troisième couche conductrice et à la cinquième couche conductrice par l'intermédiaire de la première structure de trous d'interconnexion conducteurs, et la deuxième électrode externe étant connectée électriquement à la deuxième couche conductrice et à la quatrième couche conductrice par l'intermédiaire de la deuxième structure de trous d'interconnexion conducteurs ;
    une première région de chevauchement existant entre la première tranchée d'isolation, la troisième tranchée d'isolation et la cinquième tranchée d'isolation dans une direction verticale, une deuxième région de chevauchement existant entre la deuxième tranchée d'isolation et la quatrième tranchée d'isolation dans la direction verticale, et la première région de chevauchement n'empiétant pas sur la deuxième région de chevauchement.
  15. Procédé selon la revendication 14, la deuxième électrode externe étant en outre connectée électriquement au substrat semi-conducteur à travers la deuxième structure de trous d'interconnexion conducteurs, le substrat semi-conducteur étant formé d'un matériau ayant une résistivité inférieure à une valeur seuil, ou une surface du substrat semi-conducteur étant pourvue d'une couche conductrice fortement dopée ou d'une région conductrice ayant une résistivité inférieure à une valeur seuil, le procédé comprenant en outre :
    la production d'une structure d'arrêt de gravure, la structure d'arrêt de gravure étant prévue sur une surface supérieure du substrat semi-conducteur pour empêcher la première structure de trous d'interconnexion conducteurs d'être connectée électriquement au substrat semi-conducteur.
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