Classifications

• • G—PHYSICS
  • G04—HOROLOGY
  • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
  • G04B17/00—Mechanisms for stabilising frequency
  • G04B17/04—Oscillators acting by spring tension
  • G04B17/06—Oscillators with hairsprings, e.g. balance
  • G04B17/066—Manufacture of the spiral spring
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
  • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
  • F16F1/00—Springs
  • F16F1/02—Springs made of steel or other material having low internal friction; Wound, torsion, leaf, cup, ring or the like springs, the material of the spring not being relevant
  • F16F1/024—Covers or coatings therefor
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
  • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
  • F16F1/00—Springs
  • F16F1/02—Springs made of steel or other material having low internal friction; Wound, torsion, leaf, cup, ring or the like springs, the material of the spring not being relevant
  • F16F1/04—Wound springs
  • F16F1/10—Spiral springs with turns lying substantially in plane surfaces
• • G—PHYSICS
  • G04—HOROLOGY
  • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
  • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
  • G04D3/0002—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe
  • G04D3/0035—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the regulating mechanism
  • G04D3/0041—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the regulating mechanism for coil-springs
• • G—PHYSICS
  • G04—HOROLOGY
  • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
  • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
  • G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams

Definitions

• the present invention relates to a method of manufacturing thermocompensated clockwise spirals, more precisely thermocompensated clockwise spirals for equipping rockers to form mechanical oscillators with them.
• Patent EP 1422436 discloses a thermocompensated horological spiral comprising a core and a layer coating the core, the layer being made of a material whose thermal coefficient of the modulus of elasticity is of opposite sign to that of the material of the soul.
• the layer thus compensates for the variations of the modulus of elasticity of the core as a function of the temperature and its thickness can be chosen sufficient to also compensate for the variations of the moment of inertia of the balance, so that the frequency of the oscillator is insensitive at the temperature.
• the core is of monocrystalline silicon and the thermal compensation layer is silicon oxide.
• EP 3181938 and EP 3181939 are described methods for manufacturing a watch hairspring of predetermined stiffness.
• steps b), c), d) can be repeated to refine the dimensional quality of the hairspring.
• a heat compensation step is carried out according to, in particular, the teaching of the abovementioned patent EP 1422436.
• the present invention aims to propose a method for manufacturing thermocompensated clockwise spirals that makes it possible to reduce the dispersion of stiffness between the spirals made from the same wafer.
• step d) optionally, detaching the spirals identified in step c) from the wafer, e) modifying the other spirals so that the stiffness of at least some of them is within the predetermined range, and
• step f detaching the wafer these other spirals and, if they were not detached in step d), the spirals identified in step c).
• the present invention allows fine correction on finished spirals to decrease the dispersion of a batch of manufacture.
• the process according to the invention lends itself well to industrial manufacture where it is important to keep the spirals on the wafer as long as possible.
• FIG. 1 is a diagram of the process according to the invention
• FIG. 2 is a perspective view of a wafer and a spiral formed in the wafer in a first step of the method according to the invention
• FIG. 3 is a sectional view of a turn of a spiral carrying a thermal compensation layer obtained at another stage of the process according to the invention
• FIG. 4 is a diagram showing the dispersion, in terms of stiffness, of spirals obtained in the step of FIG. 3.
• a method for manufacturing watch spirals according to the invention comprises successive steps 11 to 23.
• Said spirals are intended in particular to serve as elastic return elements for pendulums to form oscillator oscillators with them. mechanical, especially for wristwatches.
• step 11 it is equipped with a wafer (wafer) and is engraved spirals, for example by deep reactive ion etching (DRIE) or by laser etching.
• the wafer is made of a silicon-based material, for example example in silicon itself or in a multilayer material of silicon on insulator type SOI ("Silicon On Insulator") comprising a layer of silicon oxide between two silicon layers.
• SOI Silicon on Insulator
• the spirals obtained at the end of step 11 may be multilayer: silicon - silicon oxide - silicon.
• Multilayer spirals may also be made by etching a first portion of each hairspring in a first wafer portion and a second portion of each hairspring in a second wafer portion separate from the first wafer portion, and then joining the two portions of wafer. More details on the manufacture of multilayer spirals can be found in WO 2016/128694. It is also possible to start from an SOI wafer, etch the spirals only in its upper layer of silicon and then to remove the lower layer of silicon and the intermediate layer of silicon oxide, the wafer with which the process is then continued consisting of the upper layer of silicon.
• the silicon may be monocrystalline, polycrystalline or amorphous. It can also be doped. Materials other than silicon-based materials could still be used, such as glass, ceramic, metal or metal alloy.
• step 11 the engraved spirals remain attached to the wafer by bridges of material, as shown in FIG. 2 where, for the sake of simplification, only one hairspring 31 has been represented in the wafer 33, this hairspring being attached to the plate 33 by a bridge of material 35.
• step 13 the method described in patent application EP 3181938 or in patent application EP 3181939 is applied, these two patent applications being incorporated by reference into the present application.
• a stiffness representative of the spirals engraved in the wafer is determined, from the result of this determination a thickness of material to be added, removed or modified on the spirals in order to obtain a stiffness is calculated.
• predetermined amount step 13b
• step 13c the steps 13a, 13b and 13c can be repeated one or more times.
• the stiffness determined in step 13a may be the average stiffness of all the spirals etched in the wafer, the average stiffness of a sample of these spirals or the stiffness of one of these spirals.
• the stiffness can be determined by coupling the hairspring, while it is still attached to the plate, with a predetermined moment of inertia beam, by measuring the frequency of the balance-hairspring assembly and by deducing from this measurement, by calculation, the stiffness of the spiral.
• Step 13c is performed, preferably simultaneously, on all the spirals attached to the wafer. If in step 11 the spirals have been etched in dimensions larger than the dimensions necessary to obtain spirals having the predetermined stiffness, the step 13c may consist in removing a thickness of material from the spirals, on all or part of their outer surface. homogeneously or not. If in step 11 the spirals have been etched in dimensions smaller than the dimensions necessary to obtain spirals having the predetermined stiffness, step 13c may consist in adding a thickness of material on the spirals, on all or part of their surface external, homogeneously or not.
• the removal of material in step 13c can be performed by etching, such as wet etching, vapor phase etching, plasma etching, or laser etching.
• material removal can also be done by oxidizing the spirals, in order to transform the thickness of silicon-based material to be removed from silicon oxide (S1O2), and then removing the silicon oxide.
• S1O2 silicon oxide
• step 13c can be carried out by any additive method, for example thermal oxidation, galvanic growth, physical vapor deposition, chemical vapor deposition or atomic layer deposition.
• the material deposited on the spirals may be the same as that of the wafer or may be different.
• step 13c it is possible in step 13c to modify a thickness of material calculated in step 13b without this necessarily modifying the dimensions of the spirals.
• a thermal compensation layer is formed on the spirals, preferably over their entire outer surface, as illustrated in FIG. 3, where the thermal compensation layer is designated by reference numeral 37.
• This thermal compensation layer is made of a material having a thermal coefficient of modulus of elasticity of opposite sign to that of the material constituting the spirals obtained at the end of step 13. If the spirals are made of a silicon-based material , the thermal compensation layer is typically silicon oxide and can be obtained by thermal oxidation, by placing the spirals in an oven to be subjected to a temperature between 800 and 1200 ° C and an oxidizing atmosphere. The thermal compensation layer completely or partially compensates for the variation of the modulus of elasticity of the spirals as a function of temperature.
• the thermal compensation layer can also overcompensate the variation of the modulus of elasticity of the spirals, in order to compensate for the variation as a function of the temperature of the spiral. moment of inertia of the pendulums that these spirals are intended to equip and thus make the frequency of the balance-spring oscillators insensitive to the temperature.
• step 17 the stiffness of each of the spirals is determined while they are still attached to the wafer.
• the hairspring is coupled with a predetermined moment of inertia balance, the frequency of the hairspring assembly is measured and the stiffness of the hairspring is deduced from this measurement.
• the stiffness of only part of the spiral can be determined. For example, it is possible to determine the stiffness of spirals representative of respective zones of the wafer, the spirals of the same zone having substantially the same stiffness.
• the stiffnesses of the spirals are distributed in a number N of classes, for example sixty classes, according to a dispersion curve of the type of the curve 39 illustrated in FIG.
• the invention aims to reduce the number of classes.
• N / 2 first classes or the N / 2 last classes it is considered that only part of the spirals are compliant, for example the N / 2 first classes or the N / 2 last classes, and the other spirals are modified to make them compliant. In this way we can divide the number of classes by two.
• step 19 the spirals whose stiffness is within a predetermined range, corresponding for example to the N / 2 first classes or the N / 2 last classes, are considered as compliant and are detached from the wafer. The other spirals are left on the wafer.
• the spirals left on the wafer are modified so that their stiffness is within the predetermined range.
• the thickness of the thermal compensation layer is increased or decreased for all the spirals present on the wafer, preferably simultaneously, in order respectively to increase or decrease the stiffness of said spirals.
• the thickness value to add or remove from the layer of thermal compensation can be previously determined by calculation.
• the Applicant has found in particular that for spirals formed of a silicon core and an outer layer of thermal compensation in silicon oxide whose thickness is equal to 10% of the thickness (width) of the core in silicon, a modification of only 5% of the thickness of the thermal compensation layer made it possible to halve the number N of classes while complying with the requirements of the COSC (Swiss Official Chronometer Testing) in terms of running as a function of the temperature is at most ⁇ 0.6 seconds / day / degree. This significant reduction in the number of classes reduces component inventory management and lowers costs.
• the modification of the spirals in step 21 leads to moving the dispersion curve of the spirals remaining on the wafer to the right (curve 43) of preferably a distance equal to the length of the predetermined range so that each of these spirals can belong to one of the N / 2 last classes.
• the two configurations illustrated in Figure 4 are the two optimal configurations. Intermediate configurations are of course possible resulting in a global number of classes, for the spirals detached from the wafer and those still attached, greater than N / 2 but less than N.
• thermal compensation layer in step 21 it is possible, in the case of spirals comprising a core made of silicon-based material covered with a thermal oxide compensation layer. of silicon, thermally oxidizing the spirals as described above in connection with steps 13c and 15.
• etching techniques such as vapor phase etching, plasma etching, wet etching (using, for example, hydrofluoric acid ) or laser engraving.
• thermal compensation layer As an alternative to the addition or removal of material from the thermal compensation layer, it is possible to modify the structure or composition of the thermal compensation layer to a predetermined depth without necessarily modifying its thickness.
• This modification of structure or composition may consist, for example, in doping the thermal compensation layer by implantation, diffusion or the like.
• a material different from that of the thermal compensation layer may be deposited on this layer.
• the deposit may be in particular a physical vapor deposition, a chemical vapor deposition or a deposit in atomic thin layers.
• the material different from that of the thermal compensation layer may be a metal, an oxide, a nitride or the like.
• step 19 the spirals identified as compliant are left on the wafer but are protected, for example by means of masks, of the treatment implemented in step 21.
• the spirals considered as non-compliant are modified and in the last step 23 all the spirals are detached from the wafer.

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• General Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Mechanical Engineering (AREA)
• Optics & Photonics (AREA)
• Plasma & Fusion (AREA)
• Micromachines (AREA)
• Springs (AREA)
• Stringed Musical Instruments (AREA)

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• 2019
  • 2019-02-22 TW TW108105999A patent/TWI796444B/zh active
  • 2019-03-15 CN CN201980020157.1A patent/CN111919176B/zh active Active
  • 2019-03-15 US US16/980,124 patent/US11703804B2/en active Active
  • 2019-03-15 EP EP19716572.3A patent/EP3769161B1/de active Active
  • 2019-03-15 JP JP2020550658A patent/JP7227980B2/ja active Active
  • 2019-03-15 WO PCT/IB2019/052107 patent/WO2019180558A1/fr unknown

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