EP3704770A1 - Laser à diodes - Google Patents

Laser à diodes

Info

Publication number
EP3704770A1
EP3704770A1 EP18796655.1A EP18796655A EP3704770A1 EP 3704770 A1 EP3704770 A1 EP 3704770A1 EP 18796655 A EP18796655 A EP 18796655A EP 3704770 A1 EP3704770 A1 EP 3704770A1
Authority
EP
European Patent Office
Prior art keywords
nanowires
contact
nanotubes
metal layer
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18796655.1A
Other languages
German (de)
English (en)
Inventor
Nikolas VON FREYHOLD
Jürgen Wolf
Petra Hennig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jenoptik Optical Systems GmbH
Original Assignee
Jenoptik Optical Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Optical Systems GmbH filed Critical Jenoptik Optical Systems GmbH
Publication of EP3704770A1 publication Critical patent/EP3704770A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays

Definitions

  • the invention relates to a laser radiation source with high power density.
  • laser radiation sources can be produced on the basis of diode laser elements, in particular laser bars.
  • WO2011029846 discloses a method for producing a diode laser without involving a soldering process, in which a first metallic layer between the first contact surface of the laser bar and the first heat conducting body and a second metallic layer between the second contact surface of the laser bar and the second heat conducting body are used , These layers, which may consist of indium, for example, cause a deadlock in the clamping.
  • the disadvantage is that very high demands must be placed on the flatness of the laser bar and on the flatness of the pads of the two heat conducting body and on compliance with the parallelism of the surfaces during assembly. Deviations in the ⁇ range can already lead to large-scale voids where there is no material bond. In particular, a poorly formed material bond on the p-side contact surface of the laser bar can lead to overheating and even burnup of the laser bar. In addition, a migration of material of the indium layers can occur. This can lead to the failure of the laser.
  • a housing with nanotubes for cooling semiconductor chips is known.
  • From US 6891724 B2 it is known to produce an array of carbon nanotubes on a semiconductor chip in order to improve the heat transfer at the thermal interface of the chip to the heat sink.
  • From US 7784531 B1 it is known to fill up the interstices between carbon nanotubes with a filling material.
  • From WO 2008036571 it is known to fill up the interspaces between carbon nanotubes with a thermally conductive filling material.
  • US 8093715 B2 a manufacturing method for carbon nanotubes as a thermal interface is known.
  • From WO 2007137097 and WO 2008121970 methods are known for producing carbon nanotubes on a copper substrate. From US
  • 20120299175 A1 a method is known to produce carbon nanotubes on a wafer.
  • the object of the invention is to provide a simply constructed diode laser high power.
  • the object is achieved by a diode laser arrangement according to claim 1, a diode laser arrangement according to claim 16 and the manufacturing method according to claim 19 and claim 20.
  • the laser beam source according to the invention can be produced easily and has a high power and is suitable for pulse operation.
  • the diode laser according to the invention comprises a diode laser bar.
  • the diode laser bar can also be referred to as a laser bar.
  • a laser bar can be designed in a known manner as an edge-emitting component and comprise one or preferably a plurality of emitters, which can be arranged offset to one another in each case in an x-direction.
  • a laser bar may preferably have a width between 3 mm and 12 mm in the x-direction.
  • a laser bar may comprise a plurality of emitters each arranged offset in a direction x relative to one another, each having a light exit facet. The emitters can emit laser radiation in a main radiation direction z.
  • a laser bar may preferably have between 3 and 100 emitters; commercially available are, in particular, laser bars with 5, 7, 19 or 49 emitters.
  • the center distance of adjacent emitters may preferably be between 0.1 mm and 1 mm.
  • the thickness of the laser bar may preferably be between 0.05 mm and 0.2 mm in a y-direction.
  • the resonator length of the emitter of a laser bar in a z-direction may preferably be between 0.5 mm and 6 mm.
  • the direction of the central rays of the emitted laser radiation may be the z-direction.
  • the directions x, y and z may be perpendicular to each other.
  • the laser bar can have a known epitaxially produced layer sequence as a pn junction with a quantum well.
  • the individual emitters may be formed, for example, as wide-band emitter or as a ridge waveguide. It is also possible for there to be a plurality of layer sequences each having at least one quantum well, ie a plurality of pn junctions lying electrically in series. Such bars are also called nanostack. Then several emitters are stacked in the y direction.
  • a laser bar can be pumped by an electric current. For current input, N contact and a P contact may be provided on the laser bar, which may be formed as parallel surfaces on the top or bottom of the laser bar and may be arranged in xz planes. The laser bar can be arranged in an xz-plane with respect to the above-mentioned coordinate system.
  • the laser arrangement according to the invention comprises at least one diode laser bar, at least one heat sink with a first connection area and at least one lid with a second connection area, wherein the diode laser bar has one or more emitters, at least one P contact and at least one N contact and the P contact has one has first metal layer and the N-contact has a second metal layer,
  • first and / or the second pad is covered with nanowires or nanotubes.
  • the heat sink may be made of a metal such as copper, silver, aluminum, molybdenum-copper or tungsten-copper or a composite material such as diamond-copper or diamond-silver.
  • the cover may be made of a metal, for example of copper, silver, aluminum, molybdenum-copper or tungsten-copper or of a composite material such as diamond-copper or diamond-silver.
  • the P contact may be the anode terminal of the laser bar, the N contact the cathode terminal of the laser bar.
  • the lid may be joined to the heat sink via an electrically insulating layer.
  • the heat sink may be provided for dissipating the waste heat of the diode laser bar.
  • the lid may also have the function of a (second) heat sink and be designed to dissipate waste heat from the laser bar.
  • the N contact on the second connection surface may additionally be thermally connected to the cover.
  • the heat sink may also have cooling channels for a coolant.
  • the electrically insulating layer can, for example, be an adhesive layer, advantageously a heat-conducting adhesive, with which the cover is fastened to the heat sink.
  • the first metal layer may have a thickness of 1 ⁇ to 10 ⁇ .
  • the first metal layer may be formed as a thick gold layer or include such.
  • the first metal layer may comprise, for example, a galvanically produced layer.
  • the first metal layer can serve for heat spreading.
  • the second metal layer may have a thickness of less than 500 nm.
  • Layer can be produced for example by sputtering. It can be a thin gold layer.
  • Nanowires are also referred to as nanowires or nanorods.
  • the term nanowires is also intended to include whiskers.
  • the nanowires may consist of a metal or a semi-metal.
  • the nanotubes can be made of carbon. They are also referred to as CNT (English carbon nanotubes).
  • CNT English carbon nanotubes
  • it can be single-walled tubes.
  • Nanowires can be produced by means of a galvanic process.
  • a nanoporous filter film can be used, which can first be applied to the surface to be coated. Subsequently, the nanowires can be deposited by the galvanic process, after which the nanoporous foil and all unnecessary structures can be removed by stripping from the surface.
  • the nanowires can be made of electrodepositable metals, such as copper, silver, gold.
  • the nanowires may have diameters between 30 nm and 2 ⁇ m and lengths of up to about 20 ⁇ m.
  • the coverage of the nanowires or nanotubes on the surface can be between 5% and about 80%.
  • Occupancy density can be understood as the ratio of the sum of the cross-sectional areas of the nanowires to the wired base area.
  • the calculation of the cross-sectional area can be based on the outer diameters of the tubes, while the hollow interior can remain insignificant. Too low or too high coverage may be detrimental to the beneficial effect.
  • a suitable manufacturing process for nanowires is described in http://www.nanowired.de/technology/.
  • carbon nanotubes are known which are formed perpendicular to a base, for example from Ryu, J.-H .; Lee, G.-J .; Kim, W.-S .; Lim, H.-E .; Mativenga, M .; Park, K.-C; Park, H.-K. All-Carbon Electrode Consisting of Carbon Nanotubes on Graphite Foil for Flexible Electrochemical Applications. Materials 2014, 7, 1975-1983 and US7710709.
  • the nanowires and / or the nanotubes may be aligned in a preferred direction normal to the first and second pad, respectively. They can advantageously be firmly connected to the respective surface.
  • the first pad can be covered with nanotubes and / or nanowires, and the first metal layer has a thickness of 1 ⁇ m to 10 ⁇ m, and the nanotubes / and / or nanowires have a greater hardness than the first metal layer. Then, the nanotubes or the nanowires may be at least partially embedded in the first metal layer. As a result, a mechanically low-voltage electrically and thermally good conductive connection of the laser bar to the heat sink can be produced.
  • the second connection surface can be covered with nanotubes and / or nanowires, and the nanotubes and / or nanowires can have a greater hardness than the second metal layer and can be at least partially penetrated therein.
  • the second connection surface can be covered with nanotubes and / or nanowires, and the nanotubes / and / or nanowires can be elastically or plastically deformed.
  • the nanotubes and / or nanowires can be compressed, bent or bent. This can have the advantage that the pressure force of the laser bar to the heat sink can be maintained, for example, with respect to the aging of the component, during load changes in pulse mode and thermal cycling.
  • the first pad may include an indium layer or a gold layer.
  • the first pad can have an indium layer
  • the P-contact of the laser bar can have a first metal layer which comprises a thick gold layer with a thickness between 1 ⁇ m and 10 ⁇ m
  • the second pad of the lid can be made with nanowires or Be occupied nanotubes.
  • a diffusion barrier layer may be provided, for example a palladium-nickel or platinum layer. This diffusion barrier layer may be formed as part of the first metal layer.
  • the first connection area may comprise a tin layer or an indium-tin layer. In the case of an indium-tin layer, this may have a eutectic composition.
  • the first pad can have a gold layer
  • the P-contact of the laser bar can have a first metal layer comprising a thick gold layer with a thickness of between 1 ⁇ m and 10 ⁇ m
  • the second pad of the lid can be made with nanowires or nanotubes are occupied.
  • the gold layer of the first pad can be brought into direct contact with the thick gold layer on the P-contact of the laser bar. It may, but need not, come to a cold welding of the two gold layers mentioned.
  • the second connection surface can be covered with nanotubes and / or nanowires and the second metal layer can have a thickness of less than 500 nm. Then, the nanotubes or nanowires can not significantly spit into the second metal layer. As a result, the deformation of the nanotubes or nanowires can be more effective.
  • the deformation can be so large that the coating with nanotubes or nanowires is compressed by a factor of at least 2. It can be used as a measure of the volume of occupancy before and after deformation.
  • the nanotubes or nanowires have an outer diameter of less than 5 ⁇ , particularly advantageous of less than 2 ⁇ and most particularly advantageous of less than 1 ⁇ and have a length of more than 2 ⁇ , more preferably more than 10 ⁇ .
  • the length of the nanotubes or nanowires can exceed twice, advantageously five times, and more preferably ten times, the outer diameter thereof. In order to compensate for unevenness of the laser bar and / or the heat sink or the lid in ⁇ - ⁇ .
  • the first metal layer on the outside can be covered with nanotubes and / or nanowires. Then the nanotubes or nanowires can be produced immediately on the wafer before the laser bars are separated.
  • the nanowires can be made of gold. Then, a particularly good electrical connection of the laser bar with the heat sink or the lid can be made.
  • the nanowires may consist of silver, nickel, chromium, platinum, tin, silicon, germanium or copper. Such nanowires may be suitable for penetrating into a thick gold layer.
  • the first connection surface can be covered with first nanotubes or nanowires and the first metal layer can be covered with third nanotubes or nanowires. Then, the first and third nanowires or nanotubes intermesh and produce a particularly good electrical and thermal connection.
  • the third nanotubes or nanowires may be made of a different material than the first nanotubes or nanowires. Then diffusion can take place at the interfaces of the materials, which can lead to an even better connection.
  • An advantageous laser arrangement can comprise a carrier, at least one diode laser bar, at least one heat sink with a first connection area and at least one lid with a second connection area, the diode laser bar having one or more emitters, at least one P contact and at least one N contact, and P-contact has a first metal layer and the N-contact has a second metal layer, and the heat sink is electrically and thermally connected to the first pad with the P-contact and the N-contact on the second pad with the lid is electrically connected,
  • first and / or the second pad is covered with nanowires or nanotubes
  • the heat sink has a third pad occupied by fourth nanowires and the carrier is filled with fifth nanowires and the fourth nanowires engage the fifth nanowires, and the heat sink is connected to the carrier by this engagement.
  • each diode laser bar may each have a P-contact and an N-contact, and each P-contact may include a first metal layer and each N-contact a second metal layer.
  • the first metal layers may be of similar construction, as well as the second metal layers.
  • Several diode laser bars can be similar.
  • the fourth and fifth nanowires can form a hook-and-loop fastener which ensures a permanent connection of the heat sink to the wearer.
  • This can be done, for example, the KlettWelding method, which is described in http://www.nanowired.de/.
  • a cold welding effect may be present, such as described in Lu, Yang; Huang, Jian Yu; Wang, Chao; Sun, Shouheng; Lou, Jun (2010). "Cold welding of ultrathin gold nanowires". Nature Nanotechnology. 5 (3): 218-24.
  • the lid may have a fourth pad occupied by sixth nanowires and the carrier loaded with seventh nanowires, the seventh nanowires on the carrier being electrically isolated from the fifth nanowires, and the sixth nanowires engaging the seventh nanowires and by this engagement, the lid is connected to the carrier.
  • the carrier may comprise an example plate-shaped ceramic.
  • a first metallic layer region and a second metallic layer region, which are electrically insulated from one another, can be present on this ceramic.
  • the fifth nanowires may be attached to the first layer region and the seventh nanowires to the second layer region. Thereby, the electrical insulation can be provided.
  • the lid can be provided simultaneously for heat conduction.
  • the lid may be simultaneously provided as a second heat sink for a second laser bar.
  • the lid of the second laser bar can simultaneously be a heat sink for a third laser bar etc. In this way, several laser bars in the y-direction with each intermediate elements, which are simultaneously cover and heat sinks, be stacked in parallel.
  • the third and the fourth connection surfaces can be provided perpendicular to the first connection surface. They can be in an xy plane. They can be located on the heat sinks or lids.
  • the fourth and fifth and, if provided, the sixth and seventh nanowires may advantageously consist of gold. Then the cold welding effect can be particularly pronounced.
  • a method of making a laser array comprises: providing at least one diode laser bar, at least one heat sink having a first pad and at least one lid having a second pad, the diode laser bar having one or more emitters, at least one P-contact and at least one N-contact and the P-contact has a first metal layer and the N-contact has a second metal layer, ⁇ covering the first and / or the second pad with nanowires or nanotubes,
  • the preparation may include the curing of a joining agent, which subsequently forms an electrically insulating layer which connects the lid to the heat sink.
  • a clamping force can be generated, which holds the laser bar clamped between the first and the second pad.
  • the nanowires or nanotubes can also be poked into the first or second metal layer and / or deformed.
  • a post-curing can be provided.
  • the postcuring may be annealing in which the laser array is exposed once or repeatedly to a temperature elevated from room temperature over a certain period of time.
  • the connection of the P-contact and / or the N-contact with the nanowires or the nanotubes can be improved.
  • the electrical and / or the thermal conductivity of this compound can be improved.
  • Another method of making a laser array includes:
  • At least one diode laser bar at least one heat sink having a first pad and a third pad and at least one
  • Lid having a second pad, the diode laser bar having one or more emitters, at least one P-contact and at least one N-contact and the P-contact has a first metal layer and the N-contact has a second metal layer,
  • the laser bar and the heat sink or heat sinks and covers may form a stack, which may have a stacking direction y.
  • the y-force may be a clamping force holding the stack together.
  • the y-force may be an external force that holds the stack together substantially non-positively. It can work in the y direction. Alternatively, you can can be achieved by deforming the nanotubes or nanowires and / or penetration into the first and second metal layers, a form or material bond, by which the stack can be held together even after a shutdown of the clamping force.
  • the z-force may be an external force that pushes the stack onto the carrier. It can work in -z direction. It can act on the heat sinks or the cover so that they are pressed with a uniform pressure on the carrier. As a result, the mechanical load on the laser bars can be minimized. Due to the z-force, the fourth nanowires can be pressed with the fifth nanowires, so that they form a permanent connection, which is retained even if the z-force is switched off after pressing. This compound can function similarly to a hook and loop fastener, wherein the nanowires can be plastically deformed during compression. At the same time, the sixth nanowires and the seventh ones can be pressed in the same way.
  • the clamping force can be maintained in the stack, so that after pressing and the y-force can be switched off. Because of the first nanowires or nanotubes, the composite in the stack may be somewhat yielding. As a result, too great a shear stress on the laser bars during pressing and / or afterwards during operation of the laser can be avoided.
  • Fig. 1 shows a first embodiment in front view.
  • Fig. 2 shows the first embodiment in side view.
  • Fig. 3 shows a second embodiment.
  • Fig. 4 shows the second embodiment in side view.
  • Fig. 5 shows a third embodiment.
  • Fig. 6 shows the third embodiment in side view.
  • Fig. 7 shows a fourth embodiment.
  • Fig. 8 shows the fourth embodiment in side view.
  • Fig. 9 shows a fifth embodiment in side view.
  • Fig. 10 shows a sixth embodiment.
  • Fig. 11 shows the manufacture of the sixth embodiment.
  • Fig. 12 shows a seventh embodiment. embodiments
  • Fig. 1 shows a first embodiment in front view.
  • the laser arrangement 1 of the first exemplary embodiment comprises a diode laser bar 2, a heat sink 4 with a first connection area 6 and a cover 7 with a second connection area 8, wherein the diode laser bar has a plurality of emitters 9, a P-contact 11 and an N-contact 12 and the P-type contact has a first metal layer 13 that is thicker than the second metal layer 14, and the N-type contact has a second metal layer 14,
  • the second pad 8 is covered with nanowires or nanotubes 16.
  • the lid 7 is joined to the heat sink 4 via an electrically insulating layer 15.
  • the waste heat of the laser bar 2 can be derived via the first and the second connection surface 6, 8. From the cover 7, waste heat can be conducted via the electrically insulating layer 15 to the heat sink 4.
  • the N-contact 12 is additionally thermally connected to the lid 7 at the second connection surface 8.
  • the electrically insulating layer 15 is an adhesive layer, advantageously a thermal adhesive, with which the lid is attached to the heat sink.
  • the first metal layer 13 has a thickness of 1 ⁇ to 10 ⁇ .
  • the first metal layer may be formed as a thick gold layer or include such.
  • the first metal layer may comprise, for example, a galvanically produced layer.
  • the first metal layer can serve for heat spreading. In a modification of the embodiment, the first metal layer may be made thinner.
  • the second metal layer has a thickness of less than 500 nm. Such a layer can be produced, for example, by sputtering. It is a thin gold layer.
  • Fig. 2 shows the first embodiment in side view.
  • the laser radiation 10 is emitted in the z direction.
  • the direction of the central ray is shown, whereby the ray bundle can be divergent.
  • Fig. 3 shows a second embodiment.
  • the nanowires or nanotubes 16 are arranged on the first connection surface 6.
  • Fig. 4 shows the second embodiment in side view.
  • Fig. 5 shows a third embodiment.
  • additional second nanowires or nanotubes 17 are additionally provided on the second connection area.
  • Fig. 6 shows the third embodiment in side view.
  • Fig. 7 shows a fourth embodiment.
  • third nanowires or nanotubes 18, which engage in the first nanowires or nanotubes 16 are additionally provided on the first metal layer 13.
  • Fig. 8 shows the fourth embodiment in side view.
  • Fig. 9 shows a fifth embodiment in side view.
  • the first metal layer is designed as a thin layer with a thickness of less than 500 nm.
  • a non-illustrated embodiment of the method for producing a laser arrangement 1, comprising:
  • the preparation may include the curing of a joining agent, which subsequently forms an electrically insulating layer 15, which connects the lid with the heat sink. Thereby, a clamping force can be generated, which holds the laser bar clamped between the first and the second pad.
  • the nanowires or nanotubes can also be stuck into the first or second metal layer.
  • Fig. 10 shows a sixth embodiment.
  • Fig. 1 1 shows the production of the sixth embodiment.
  • the advantageous laser arrangement 1 of the sixth exemplary embodiment comprises a carrier 23, at least a plurality of diode laser bars 2, 3, a plurality of heat sinks 4, 5 with a first connection area 6 and at least one lid 7 with a second connection area 8.
  • the diode laser bars have one or more emitters 9 (Not shown here, analogous to the representation in FIG. 1), at least one P-contact 11 and at least one N-contact 12.
  • the P-type contact has a first metal layer 13 and the N-type contact a second metal layer 14.
  • the heat sink is electrically and thermally connected to the P-pad at the first pad and the N-pad at the second pad is electrically connected to the lid ,
  • the first and / or the second pad are covered with nanowires or nanotubes 16.
  • the heat sink has a third pad, which is covered with fourth nanowires 19.
  • the carrier is covered with fifth nanowires 20. The fourth nanowires engage the fifth nanowires and through this engagement the heat sink is connected to the carrier.
  • the cover 7 of the first laser bar is here simultaneously the second heat sink 5 of the second laser bar 3.
  • the fourth and fifth nanowires form a hook-and-loop fastener, which ensures a permanent connection of the heat sink to the wearer.
  • the lid may have a fourth pad occupied by sixth nanowires 21 and the carrier loaded with seventh nanowires 22, the seventh nanowires on the carrier being electrically isolated from the fifth nanowires, and the sixth nanowires engaging the seventh nanowires and by this engagement, the lid is connected to the carrier.
  • the carrier 23 comprises an example plate-shaped ceramic. On this ceramic, a first metallic layer region 24 and a second metallic layer region 25 are present, which are electrically insulated from one another. The fifth nanowires are attached to the first layer region and the seventh nanowires to the second layer region. As a result, the electrical insulation is given.
  • the lid is simultaneously intended for heat conduction.
  • the lid 7 is simultaneously provided as a second heat sink 5 for a second laser bar 3.
  • a plurality of laser bars in the y-direction with each intermediate heat sinks are stacked in parallel.
  • the third and fourth pads are provided perpendicular to the first pad. They are in an xy plane.
  • the fourth and fifth and, if provided, the sixth and seventh nanowires may advantageously consist of gold. Then the cold welding effect can be particularly pronounced. In modifications of the embodiment, these are made of other metals.
  • Another method according to Fig. 1 1 for the production of a laser arrangement 1 of the sixth and in an analogous manner of the seventh embodiment comprises
  • the diode laser bar having one or more emitters 9, at least one P-contact 11 and at least one has an N-contact 12 and the P-contact has a first metal layer 13 and the N-contact has a second metal layer 14,
  • the laser bar or bars and the heat sink or heat sinks and covers form a stack which has a stacking direction y.
  • the y-force is a clamping force that holds the stack together.
  • the y-force is an external force that holds the stack together substantially non-positively. It acts in the y-direction.
  • a shaping or material connection is achieved by deforming the nanotubes or nanowires and / or penetrating into the metal layers, by means of which the stack is held together even after the clamping force has been switched off.
  • the z force is an external force that pushes the stack onto the carrier. It works in the -z direction. It can act on the heat sinks or the cover so that they are pressed with a uniform pressure on the carrier. This minimizes the mechanical load on the laser bars.
  • the z-force compresses the fourth nanowires with the fifth nanowires so that they form a permanent connection, which is maintained even when the z-force is switched off after compression. This compound can function similarly to a hook and loop fastener, wherein the nanowires can be plastically deformed during compression. At the same time, the sixth nanowires and the seventh ones can be pressed in the same way.
  • the clamping force is maintained in the stack, so that after pressing and the y-force can be switched off. Because of the first nanowires or nanotubes, the composite in the stack is somewhat yielding. As a result, too great a shear stress on the laser bars during pressing and / or afterwards during operation of the laser can be avoided.
  • Fig. 12 shows a seventh embodiment.
  • a plurality of stacks each comprising a heat sink 4, a diode laser bar 2 and a lid 7 are arranged on a common carrier 23.
  • the electric current flow from the cover 7 of the first stack to the second heat sink 4 of the second stack is guided here via the second layer region 25.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un ensemble laser (1) comprenant une barrette de diodes laser (2), un dissipateur thermique (4) et au moins un couvercle (7). La barrette laser est disposée entre le dissipateur thermique et le couvercle. Le dissipateur thermique et/ou le couvercle est garni de nanofils (16) ou de nanotubes qui permettent d'établir le contact entre la barrette laser et le dissipateur thermique ou le couvercle.
EP18796655.1A 2017-11-03 2018-11-02 Laser à diodes Pending EP3704770A1 (fr)

Applications Claiming Priority (2)

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DE102017219581 2017-11-03
PCT/EP2018/080034 WO2019086619A1 (fr) 2017-11-03 2018-11-02 Laser à diodes

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EP3704770A1 true EP3704770A1 (fr) 2020-09-09

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JP (1) JP2021501997A (fr)
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WO (1) WO2019086619A1 (fr)

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WO2019086619A1 (fr) 2019-05-09
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US20200395738A1 (en) 2020-12-17
JP2021501997A (ja) 2021-01-21

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