EP3664952A1 - Dispositif et procédé pour solliciter des couches de génération de tension avec une pression en vue d'un guidage amélioré d'une fissure de séparation - Google Patents

Dispositif et procédé pour solliciter des couches de génération de tension avec une pression en vue d'un guidage amélioré d'une fissure de séparation

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Publication number
EP3664952A1
EP3664952A1 EP18765357.1A EP18765357A EP3664952A1 EP 3664952 A1 EP3664952 A1 EP 3664952A1 EP 18765357 A EP18765357 A EP 18765357A EP 3664952 A1 EP3664952 A1 EP 3664952A1
Authority
EP
European Patent Office
Prior art keywords
donor substrate
layer
voltage generating
generating layer
pressurizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18765357.1A
Other languages
German (de)
English (en)
Inventor
Marko Swoboda
Ralf Rieske
Christian Beyer
Jan Richter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltectra GmbH
Original Assignee
Siltectra GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltectra GmbH filed Critical Siltectra GmbH
Publication of EP3664952A1 publication Critical patent/EP3664952A1/fr
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Definitions

  • the present invention according to claims 1 and 14 each relate to a method for separating at least one solid state layer, in particular of several solid layers successively, from a donor substrate and according to claim 15 to a system for separating solid state disks from a donor substrate.
  • Semiconductor materials are e.g. grown in large cylinders of crystalline material, so-called ingots, while industrial processes often require wafer material of varying thickness and surface quality. Wafering of brittle semiconductor materials is often performed with diamond or slurry-based wire sawing processes. These sawing processes not only result in kerf loss of potentially valuable material, but also surface roughness and underneath the surface to damage the crystal. These wafer sawing processes require the necessary polishing and grinding steps in the wafer manufacturing process, resulting in additional damage and process costs.
  • kerf-less technologies have been developed which promise a reduction in kerf losses, if not elimination, as well as under surface damage and grinding process steps.
  • so-called spalling processes use to separate stress - often temperature-related - crystalline materials along crystal planes of well-defined thickness. Spalling can be done with nickel-chromium alloys, silver-aluminum paste, epoxy resin, aluminum and nickel. Kerf-free wafering techniques have the potential to drastically reduce damage in semiconductor manufacturing processes. Stress-based separation techniques, such as spalling, use externally applied stresses to separate crystalline materials along their crystal planes of well-defined thickness. Substrates show after spalling, however, so-called Wallner lines, which originate from the crack propagation in the crystal.
  • Spalling was made possible using differences in thermal expansion coefficients between a brittle material and a polymer adhering to the surface of the material. Cooling of the bonded materials below the glass transition temperature of the polymer induces strains leading to the l Lead material separation along a crack plane.
  • An advantage of this particular method, as opposed to other types of spalling, is that the process of cooling does not cause increased diffusion of unwanted chemical components through the material, as opposed to high temperature processes also used for spalling.
  • spalling processes tend to be limited in their control over the wafer thickness achieved, and tuning the vertical location of the crack propagation is complicated.
  • spalling produces very prominent patterns of Wallner lines on the surface. This pattern consists of strip-shaped grooves and elevations, which originate from the crack propagation in the semiconductor material and allow a derivation of the crack dynamics in the substrate.
  • the crack begins at the edge at some point and then spreads rapidly from the edge of the substrate.
  • Wallner lines of conventional spalling surfaces greatly increase the resulting surface roughness, often to the point where additional polishing or grinding steps are required prior to further processing and fabrication of circuitry on the substrate.
  • Applicant's publication WO2016 / 083610 discloses laser-assisted separation of solid layers of donor substrates, in particular examples of modification generation.
  • the document DE102016201780A1 discloses a method in which cracks are generated by means of laser beams for detaching a wafer in an ingot. The detachment takes place as a function of an ultrasound application. This method is disadvantageous because it is very fixed due to its process parameters and also requires a high Nachbearbeitungsaufwand, whereby the post-processing high costs and material losses are generated.
  • the aforementioned object is achieved according to claim 1 by a method for separating at least one solid state layer, in particular a solid state disk, from a donor substrate.
  • the method according to the invention preferably comprises at least the following steps: providing a donor substrate, generating or arranging a voltage generating layer on a surface of the donor substrate axially delimiting the donor substrate, pressing at least one pressurizing element of a pressurizing device against at least one predetermined portion of the voltage generating layer for pressing the voltage generating layer to the surface, separating the solid state layer from the donor substrate by thermally exciting the voltage generating layer, thereby generating mechanical stresses in the donor substrate, the mechanical stresses forming a crack for separating a solid state layer, wherein the pressurizing member the thermal loading of the voltage generating layer is pressed against the voltage generating layer, whereby a reduction of the crack propagation speed is preferably achieved.
  • Pressurizing element is preferably also used to remove heat or to cool the donor substrate and / or the receiving layer, in particular the polymer layer.
  • the split process time can be shortened from more than 10 min to less than 1 min or significantly reduced.
  • the shortened split process time is also advantageous because significantly improved line control, i. the successive treatments, in particular consisting of laser application, arranging a receiving layer on the donor substrate or laminating, performing the split process and surface preparation, in particular Grinden, the surface generated as a result of the separation or exposed surface / n.
  • the solution according to the invention is furthermore advantageous since electronic components can be arranged or generated on the dispenser substrate and they are not damaged by splintering by deformation of the solid-state layer or of the wafer or the risk of damage can be significantly reduced. It is thus a deflection of the Festgroper Mrs or the wafer when disconnected reduced, in particular completely avoided. That is, the solid layer and the wafer is flexed preferably less than 20 ° or less than 15 ° or less than 10 ° or less than 5 ° or less than 0 1 or less than 0.5 °.
  • a deflection of the wafer or the solid-state layer, at least in the region acted upon by the pressurizing means is preferably less than 20 ° or less than 15 ° or less than 10 ° or less than 5 ° or less than 1 ° or less Limited to 0.5 °.
  • the stress generating layer contracts as a result of the thermal stress, thereby inducing tensile forces in the donor substrate from the stress generating layer.
  • the applied pressure counteracts the tensile forces, which reduces force peaks and spreads the crack much more clearly.
  • the pressurizing element during the pressurization is at least partially in area contact with the voltage generating layer.
  • the pressurizing element thereby superimposed more than 20% or more than 30% or more than 50% or more than 75% or more than 90% or completely the axially the donor substrate limiting surface which is part of the solid state after separation.
  • the pressurization element preferably abuts against the voltage generation layer arranged or generated on this surface.
  • the pressurizing element preferably contacts more than 20% or more than 30% or more than 50% or more than 75% or more than 90% of the surface of the voltage generating layer axially overlapping the donor substrate.
  • the at least one pressurizing element generates the pressure in an edge region, wherein the edge region preferably the radially outwardly or center-distant 5% or 10% or 15% or 20% or 30% or 40%. or 50% or 60% or 70% or 80% of the surface area of the donor substrate
  • Voltage generating layer includes, and / or the at least one pressurizing element generates the pressure in a central region, wherein the center region preferably in the radial direction of the inner or center-extending 5% or 10% or 15% or 20% or 30 % or 40% or 50% or 60% or 70% or 80% of the surface of the voltage generating layer disposed on the donor substrate or the at least one pressurizing element generates the pressure over the entire planar portion of the surface of the donor substrate on which the voltage generating layer is disposed.
  • This embodiment is advantageous because the pressure for influencing the crack propagation can be applied as needed.
  • the pressurizing element applies a compressive force depending on the substrate diameter of at least 10 N, in particular between 100 N and 3000 N or between 3000 N and 10000 N or up to 100 kN on the voltage generation layer.
  • This solution is advantageous because, on the one hand, the forces generated by the voltage generation layer can be specifically counteracted and, on the other hand, crack propagation and crack initiation are still possible.
  • the pressurizing member is movably disposed according to another preferred embodiment of the present invention, and is preferably deflected from the voltage generating layer relative to the donor substrate due to the thermal stress of the voltage generating layer or the donor substrate is movably displaced from the voltage generating layer relative to the pressurizing member due to the thermal stress of the voltage generating layer ,
  • the pressurizing element and / or the donor substrate is deflectable or displaceable in the axial direction of the donor substrate.
  • the deflection of the pressurizing element takes place according to a further preferred embodiment of the present invention only after exceeding a predefined minimum force. This embodiment is advantageous because it is very precisely adjustable by the predefined minimum force how strongly occurring force peaks are to be reduced.
  • a multiplicity of pressurizing elements are provided, wherein the individual pressurizing elements serve to apply locally different pressures and / or have different shapes and / or contact surface dimensions and / or are deflected differently or are deflected differently far
  • the pressurizing element or pressurizing elements can be pressed against the voltage generating layer, the contact pressure profile being at least in sections from the distance of the pressure application to the axial center of the dispenser substrate and / or from the crack propagation velocity and / or thermal loading and / or the material of the donor substrate and / or conditioning of the donor substrate, in particular by means of laser beams, depends.
  • the pressurization elements in each case a compressive force of at least 10 N, in particular between 100 N and 3000 N or between 3000 N and 10000 N or up to 100 kN on the voltage generation layer.
  • the pressurization in two simultaneously applied pressurizing elements by a factor of up to or at least 0.1 or from up to or at least 0.3 or from up to or at least 0.5 or from up to or at least 0.75 or from to to or at least 1, 5 or from up to or at least 2 or from up to or at least 5 or from up to or at least 10 or from up to or at least 20 different from each other.
  • the deflection of the pressurizing elements is thus preferably carried out only after the exceeding of predefined minimum forces. This embodiment is advantageous because it is very precisely adjustable by the predefined minimum forces, such as strongly occurring force peaks are to be reduced by the individual pressurizing elements.
  • the stress-generating layer comprises or consists of a polymer material, the polymer material having a glass transition temperature below 20 ° C, in particular below 10 ° C or below 0 ° C, and wherein the polymer material is at a temperature is cooled below the glass transition temperature, wherein the mechanical stresses are generated in the donor substrate by the successful glass transition.
  • At least one of the pressurizing elements or the holding device on the side of the voltage-generating layer additionally has one or more heating elements, with which the thermal loading of the voltage-generating layer can quickly be reversed again above the glass transition temperature after separation has taken place. This can be ensured that after the deflection of the pressurizing elements no strong deformation of the separated solid disk leads to any breakage.
  • a reduction in the application of force after the split takes place only after a warming up of the voltage-generating layer, in particular to a temperature above that Glass transition temperature, in particular to a temperature of at least 10 ° C or at least 20 ° C or at least 30 "C or at least 50 ° C above the glass transition temperature and / or up to 100 ° C above the glass transition temperature
  • the voltage-generating layer can be heated by means of a heating device, in particular microwave radiation and / or heated air and / or a heating element.
  • the voltage-generating layer has at least a majority and is preferred in terms of mass
  • the stress generating layer is preferably comprised of or comprises a polymer hybrid material, which more preferably forms a polymer matrix having a filler in the polymer matrix, the polymer matrix preferably being a polydimethylsiloxane matrix, and wherein the mass fraction of the polymer matrix on the polymer - Hybrid material is preferably 80% to 99% and particularly preferably 90% to 99%.
  • the stress-generating layer is preferably provided as a prefabricated film and coupled to the solid, in particular glued or bonded.
  • a polymer hybrid material is specified for use in a splitting method in which at least two solid sections are produced from a solid starting material.
  • the polymer hybrid material according to the invention comprises a polymer matrix and at least one first filler embedded therein.
  • the filler may comprise a mixture of different materials, e.g. As metal particles and inorganic fibers.
  • the polymer matrix may be formed as an elastomer matrix, preferably as a polydiorganosiloxane matrix, particularly preferably as a polydimethylsiloxane matrix.
  • elastomer matrix preferably as a polydiorganosiloxane matrix, particularly preferably as a polydimethylsiloxane matrix.
  • Such polymer materials can be Particularly easy to use as a matrix material in combination with fillers, since the properties can be flexibly adjusted due to the variable degree of crosslinking and adapted to the respective filler and the solid-state starting material to be divided.
  • the mass fraction of the polymer matrix on the polymer-hybrid material is 80% to 99%, 10 preferably 90% to 99%.
  • the first filler may be of organic or inorganic nature and consist of both a chemical element and a chemical compound or a mixture of substances, for example an alloy.
  • the first filler is designed to act as a reactant, initiator, catalyst, or promoter during debonding of the polymer hybrid material from the solid portion after division, and thereby to faster release of the polymer as compared to a polymeric material without a first filler Hybrid material from the solid section after the division leads.
  • the specific chemical composition and configuration of the first filler and its mass fraction is dependent in particular on the specific material of the polymer matrix, which is to be detached, the solvent used for this and the reactants used. Furthermore, the material of the solid state starting material and the dimensions of the solid state starting material to be divided also play a role.
  • the concrete proportion of the first filler in the polymer matrix is highly dependent on the material of the filler and its mode of action. On the one hand, despite its filler, the polymer matrix must be able to do justice to its task of generating stresses. On the other hand, the proportion of the first filler must be high enough to achieve the desired effect on the polymer removal.
  • the respective optimum mass fraction of the first filler can be determined by the person skilled in the art within the scope of simple experiments carried out in a concentration-dependent manner.
  • a further filler such as fumed silica contribute in the form of an inorganic network in the polymer.
  • fumed silica contribute in the form of an inorganic network in the polymer.
  • less strong interactions can contribute to the improvement through purely hydrodynamic enhancements.
  • a targeted increase in viscosity can be mentioned, which enables improved processing in the splitting process and thus improved manufacturing tolerances can contribute.
  • this interaction makes it difficult to reduce the internal degrees of freedom with regard to structural reorientation with increasing reinforcement.
  • the first filler may be distributed in the polymer matrix such that the mass fraction of the first filler from the outside, i. H. lower boundary surface of the polymer hybrid material, which is connected during the splitting process with the solid state starting material, in the direction of a parallel to the lower interface disposed further interface of the polymer hybrid material, decreases. This means that the mass fraction of the filler near the solid state starting material or section is greater than in the other regions of the polymer hybrid material.
  • This distribution of the first filler allows a particularly effective removal of the polymer-hybrid material after the separation, since the first filler is close to the interface to the solid section and can exert its effect there. At the same time, the remaining areas of the polymer-hybrid material have less or no proportions of the first filler, so that the function of the polymer is influenced as little as possible.
  • the polymer hybrid material is layered, wherein only one of the solid state starting material facing layer has the first filler, while the remaining polymer hybrid material is free of the first filler.
  • a lower portion of the polymer hybrid material adjacent to its lower interface may be free of the first filler.
  • These and all areas described below may be in the form of layers, ie the area extends predominantly parallel to the interface of the solid state starting material, to which the polymer hybrid material is applied and has a longitudinal and transverse extent at least in the area this interface.
  • a lower region without a first filler may be provided, in particular, in the event that the first filler worsens the adhesion of the polymer hybrid material to the solid state starting material.
  • an area without a first filler is first arranged, followed by an area with a high proportion of the first filler, so that the first filler can fulfill its function.
  • the layer without the first filler may have a thickness between 10 ⁇ m and 500 ⁇ m, for example 100 ⁇ m.
  • an upper portion of the polymer hybrid material adjacent to its upper interface may be free of the first filler.
  • the upper interface is meant the interface which confines the polymer-hybrid material opposite the lower interface and the solid state starting material to the environment.
  • Lower and upper interfaces can be arranged parallel to each other.
  • Such an upper region without a first filler can be provided in particular if the first filler adversely affects the heat transfer between the environment and the polymer hybrid material, for example if the cooling of the polymer hybrid material were to be delayed.
  • the first filler may comprise or consist of a material capable of reacting with a reactant, preferably an oxidant, to release a gaseous product.
  • cavities can be generated in the polymer matrix, which allow for faster access of the reactants and solvents to the polymer matrix and any sacrificial layer present and, moreover, effect a faster removal of the educts and dissolved constituents.
  • the cavity density can be selectively influenced in the boundary region between the solid body section and the polymer hybrid material or between the sacrificial layer and the polymer hybrid material.
  • the first filler may comprise a metal, in particular aluminum, iron, zinc and / or copper or consist of a metal, in particular the aforementioned metals.
  • Consisting of includes all materials referred to above, that technologically caused impurities or technologically caused admixtures, the z.
  • Metallic fillers may be treated with oxidizing agents, e.g. Hydrochloric acid, nitric acid, citric acid, formic acid or sulfamic acid react to release a gaseous product and thereby be removed from the polymer hybrid material.
  • oxidizing agents e.g. Hydrochloric acid, nitric acid, citric acid, formic acid or sulfamic acid react to release a gaseous product and thereby be removed from the polymer hybrid material.
  • the reaction of zinc as a filler by reaction with concentrated hydrochloric acid leads to the formation of 5 additional cavities: Zn + 2 HCI! ZnCl 2 + H2
  • the generation of hydrogen introduces additional driving forces which are responsible for the removal of the polymer.
  • the first filler may improve the thermal conductivity within the polymer hybrid material, for example, by having the first filler having a higher thermal conductivity than the polymer of the polymer matrix. This may be the case, for example.
  • Another advantage in the case where the first filler comprises a metal is the improved thermal diffusivity within the polymer hybrid material. As a result of an improved thermal diffusivity, the stresses generated by the cooling process for the division of the solid state starting material can be more effective, ie faster and more efficient be generated with lower consumption of coolant. Increasing this can increase the overall yield of the splitting process.
  • a second filler can be provided in the polymer hybrid material which increases the adhesion of the polymer hybrid material on the solid state starting material compared to a polymer hybrid material without a second filler.
  • the adhesion is increased compared to a polymer material without filler.
  • the second filler may be a filler that can be activated by plasma.
  • Plasma activation results in new surface species that can be made to interact more strongly with the surface of the solid starting material and, as a result, improve the adhesion of the polymer hybrid material.
  • the type of surface species achievable by the plasma treatment is primarily dependent on the process control of the plasma process.
  • gases such as nitrogen, oxygen, silanes or chlorosilanes can be added, so that, for example, polar groups are formed which can interact more strongly with the surface of the solid starting material.
  • the second filler may be distributed in the polymer matrix 15 such that the mass fraction of the second filler increases toward the lower interface.
  • the polymer-hybrid material may contain the second filler only in a region adjacent to the lower interface, which region may also be formed as a layer in the sense of the above definition.
  • the second filler may comprise core-shell polymer particles or core-shell polymer particles.
  • the second filler can be activated by means of low-temperature plasma, eg cold plasma.
  • the plasma can be generated by means of dielectric barrier discharge (DBE).
  • DBE dielectric barrier discharge
  • electron densities in the range of 1014 to 1016 m-3 can be generated.
  • the average temperature of DBE-generated "cold" non-equilibrium plasma (plasma volume) is about 300 ⁇ 40K at ambient pressure
  • the average temperature of DBE-generated nonthermal plasma is about 70 ° C at ambient pressure.
  • the surface area becomes uni- or bipolar pulses of pulse durations from a few microseconds to tens of nanoseconds and
  • Amplitudes in the single-digit to double-digit kilovolt range applied In this case, no metallic electrodes in the discharge space and thus no metallic impurities or electrode wear are to be expected.
  • Dielectric surfaces can be modified at low temperatures and chemically activated.
  • the surface modification can be carried out, for example, by an interaction and reaction of the surface species by ion bombardment.
  • gases such as nitrogen, oxygen, hydrogen, silanes or chlorosilanes, z.
  • gases such as nitrogen, oxygen, hydrogen, silanes or chlorosilanes, z.
  • gases such as nitrogen, oxygen, hydrogen, silanes or chlorosilanes, z.
  • gases such as nitrogen, oxygen, hydrogen, silanes or chlorosilanes, z.
  • gases such as nitrogen, oxygen, hydrogen, silanes or chlorosilanes, z.
  • gases such as nitrogen, oxygen, hydrogen, silanes or chlorosilanes, z.
  • a plasma treatment for example, certain chemical groups on the surface produce.
  • the second filler may further be activated by corona treatment, flame treatment, fluorination, ozonation or UV treatment or eximer irradiation.
  • polar groups are generated on the surface of the second filler which can interact with the surface of the solid state starting material to improve adhesion.
  • the polymer hybrid material may further comprise a third filler as compared to a polymer hybrid material having a first or to a polymer hybrid material having a first and a second filler.
  • This third filler has a higher thermal conductivity and / or a higher modulus of elasticity compared to the polymer of the polymer matrix.
  • the modulus of elasticity of the polymer at low temperature conditions in the lower single-digit gigapaseal range in the lower single-digit gigapaseal range (about 1-3 GPa)
  • metallic fillers have an E-modulus in the two-digit to three-digit gigapaseal range.
  • a percolating filler network is possible, allowing for improved "force coupling" into the solid state starting material.
  • the percolation is significantly influenced by the degree of volumetric filling of the respective fillers (eg 0.1% by volume, 130% by volume to 10% by volume depending on the aspect ratio).
  • the viscoelastic layer structure of the polymer structure can be immersed and several percolation paths become effective.
  • improved heat transfer can be made possible because it can lead to improved contact of the fillers with the surface of the solid state starting material.
  • the mechanical stability of the polymer hybrid material is achieved faster even at low temperatures. In sum, there is a lower standard deviation of the corresponding structural property profiles such.
  • the spatially resolved property profile changes (stress peaks in the polymer-hybrid material) and thus in the solid state are smaller, which leads to a higher overall yield of the splitting process and a better quality of the solid sections produced.
  • the third filler can provide improved heat transfer between the environment and polymer hybrid material and faster thermal conduction within the polymer hybrid material, so that the polymer hybrid material can be cooled faster and the splitting process performed faster overall and thus more effectively can be.
  • the third filler can also be used to influence the thermal expansion coefficient.
  • the aim is to maximize the difference between the coefficients of thermal expansion of the polymer hybrid material and the solid state starting material to be divided in order to generate additional stresses necessary for the division.
  • the third filler has a high coefficient of thermal expansion, ie, an expansion coefficient higher than that of the polymer matrix.
  • the thermal expansion coefficient of the third filler may be more than 300 ppm / K.
  • the third filler may be distributed in the polymer matrix such that the mass fraction of the third filler increases toward the upper interface to allow faster heat transfer, particularly at the interface to the environment.
  • the third filler may comprise a metal, in particular aluminum, iron, zinc and / or copper, or consist of one of the metals mentioned.
  • Metals are generally characterized by high thermal conductivity and thermal conductivity.
  • the described fillers may be distributed in particulate form in the polymer matrix, the particle size in the ⁇ and nm range,
  • the filler particles can also assume other configurations, for example a rod-shaped or disc-shaped form.
  • the filler particles can have all particle size distributions, for example monomodal or bimodal, narrow, in particular monodisperse, or broad.
  • the fillers can be attached to the polymer matrix both physically, e.g. B. by embedding in the polymer network, as well as be chemically attached.
  • one or more of the fillers described may comprise or consist of inorganic or organic fibers, for example carbon, glass, basalt or aramid fibers, provided that the functions described above are compatible therewith.
  • another filler may be added comprising or consisting of said fibers.
  • Fibers usually have strongly anisotropic properties.
  • By a direction-dependent positioning of the filler in the polymer-hybrid material there is the possibility of a targeted influencing the necessary for the division of the solid state starting material voltages. This can help increase the overall yield of the splitting process.
  • An additional advantage, in the case where an organic or inorganic filler is used as a pulp having a highly anisotropic structure, is that it can achieve an improvement in mechanical properties within the polymer hybrid material.
  • the described fillers may also comprise or consist of core-shell particles. Additionally or alternatively, a further filler may be provided comprising or consisting of core-shell particles in the polymer hybrid material.
  • core-shell polymer particles in addition to an improved activatability also allows a new design of energy-absorbing mechanisms, which in total to an impact and fracture toughness increase, in particular an increase in the low-temperature impact strength of the polymer hybrid material when used in splitting Method and thus can also contribute to a higher overall yield of the splitting method. For example, a mechanical destruction of a film of a polymer hybrid material may be less likely to occur, so that the possibility of reuse of the film may be promoted.
  • Core-shell particles are characterized by the fact that a generally spherical core of a material is surrounded by a shell of a second material.
  • the shell can either completely encase the core or be permeable.
  • the materials may be both inorganic materials, such as. As metals, or organic materials such.
  • As polymers act. For example, two different metals can be combined with each other. But it is also possible to surround a core of a polymer with a shell of a metal or a second polymer.
  • Core-shell particles allow the combination of the properties of the first and second materials. For example, via an inexpensive polymer core the
  • Particle size distribution also allows the properties of the core-shell particles to be accurately predicted and adjusted.
  • one or more fillers may be carbon in the form of carbon black, graphite, crushed carbon fibers (chopped carbon fiber), carbon nanofibers, preferably in the form of carbon nanotubes (CNT), such as multi-walled carbon nanotubes (MWCNT) and single-walled carbon nanotubes (SWCNT), include or consist of these.
  • Carbon nanotubes are cylindrical graphite sheets made up of a different number of cylinders.
  • SWCNT singlewalled carbon nanotubes
  • DWCNT double-walled
  • MWCNT multi-walled carbon nanotubes
  • the third filler MWCNTs include or consist of these, since they have a particularly high thermal conductivity (> 3000 W * (m * K) -1) and at the same time have a very high tensile strength in the range of 5-60 GPa.
  • the high mechanical stability is reflected in high tear values, extreme elasticity and a very good durability of the filler.
  • MWCNT modulus of elasticity: 410 GPa to 4150 GPa vs. graphite: 1000 GPa, SWCNT: thermal conductivity approx. 6000 W * (m * K) -1).
  • the cylinder diameters of MWCNT are typically in the range of 1 nm to 100 nm, preferably 5 to 50 nm, with a length of 500 nm to 1000 pm.
  • the third filler may comprise MWCNT and at the same time the second and / or first filler may comprise or consist of carbon black, since here too an improvement of the thermal conductivity (eg up to 200 W * (m * K) -1) can be reached.
  • the thermal conductivity eg up to 200 W * (m * K) -1
  • the average diameter of the carbon black particles (carbon black) in the range of 5 nm to 500 nm, preferably from 20 nm to 200 nm, more preferably from 40 nm to 100 nm.
  • the fillers may comprise or consist of silica, for example fumed silica.
  • a further filler comprising or consisting of silicic acid may be provided in the polymer hybrid material.
  • Pyrogenic silica can form a three-dimensional network and thereby contribute to the improvement of mechanical stability.
  • a filler can serve to selectively adjust the mechanical properties of the polymer hybrid material.
  • One or more of the said fillers may be of the same material, as long as this is compatible with the function attributed to them.
  • both the first and third fillers may be aluminum
  • aluminum can be used both to generate cavities and thus to accelerate the detachment of the polymer hybrid material from the solid body section and to increase the thermal conductivity. Such a configuration simplifies the manufacturing process, since it may be sufficient to add only one or two fillers to perform all functions.
  • First and second and possibly third filler can also consist of different materials. This allows an individual and thus better adaptation of the filler to the desired function.
  • a film of the invention comprises a polymer hybrid material as described above.
  • the film may have a thickness of, for example, 0.5 to 5 mm.
  • An inventive polymer hybrid material or a film according to the invention is applied to at least this surface so that a corresponding composite structure results.
  • the applied polymer hybrid material or the applied film are also referred to below as the voltage generation layer.
  • the thickness of such a voltage generation layer can be, for example, between 0.5 mm and 5 mm, in particular between 1 mm and 3 mm.
  • the polymer hybrid material or the film can also be applied to a plurality of exposed surfaces, in particular to surfaces arranged parallel to one another.
  • the thermal loading preferably provides for cooling the stress-generating layer below the ambient temperature and preferably below 10 ° C and more preferably below 0 ° C and more preferably below -10 ° C or below -40 ° C.
  • the cooling of the voltage generation layer is most preferably such that at least a portion of the voltage generation layer undergoes a glass transition.
  • the cooling can be a cooling to below -100 ° C, the z. B. by means of liquid nitrogen is effected.
  • This embodiment is advantageous in that the voltage generation layer contracts as a function of the temperature change and / or undergoes a glass transition and the resulting forces are transferred to the solid state starting material, whereby mechanical stresses can be generated in the solid which trigger a crack and / or or to crack propagation, wherein the crack first propagates along the first release plane to cleave the solid state layer.
  • an additional phase change hold layer is formed in the area of the contact surface with the pressurization element of the pressurization device.
  • phase change substance to be selected is carried out between the single-side or double-side laminated polymer hybrid material-solid composite structures to be separated and the contact surfaces with the pressurizing member.
  • the phase change retaining layer may be designed both only on the underside or only on the upper side or on both sides to the pressurizing element.
  • the contact surfaces involved are cleaned and surface-modified to ensure optimum adhesion and spreading of the phase-change substance at the time of loading (polar and non-polar surface).
  • phase-change substance undergoes a phase transition from the liquid to the solid state.
  • the now firmly present and firmly adhering phase change substance can additionally fix the polymer-hybrid material-solid composite structure to the pressurization element and thus reduce the geometrical degrees of freedom of the polymer hybrid material-solid composite structure and thus preferably improved crack propagation and crack dynamics affect one and / or two spatial directions.
  • the surface modification of the contact surfaces in the polar case can preferably be carried out by a plasma treatment, corona treatment, plasma by means of dielectric barrier discharge (DBE), UV treatment, eximer irradiation or else by ozonation.
  • a plasma treatment corona treatment
  • plasma by means of dielectric barrier discharge (DBE)
  • UV treatment eximer irradiation or else by ozonation.
  • the necessary surface properties can be adjusted so that the particularly preferred highly polar embodiment of the phase-change layer (e.g., water, acetonitrile, tertiary alcohols, primary and secondary amides, trichloromethane, tetrahydrofuran) cause a particularly preferred increase in surface energy and thus allow for improved attachment.
  • the particularly preferred highly polar embodiment of the phase-change layer e.g., water, acetonitrile, tertiary alcohols, primary and secondary amides, trichloromethane, tetrahydrofuran
  • the contact surface in the region of the pressurizing element may be selected such that there is an increased micro-roughness which enables an improved adhesion of the phase-change substance due to the contact surface elevation.
  • the phase change substance used can be used in the form of a hotmelt adhesive, for example natural resins such as mastic, copal, dammar or else rosin (nonpolar case).
  • a hotmelt adhesive for example natural resins such as mastic, copal, dammar or else rosin
  • the phase conversion takes place in the reverse order from the solid to the liquid state of matter.
  • the hot melt adhesive is melted and connected to the pressurizing device and the polymer-hybrid material-solid composite structure, thus realizing the holding function.
  • the necessary surface functionalization may be e.g. done by silanization.
  • the polymer-hybrid material or the film is removed from the solid-state section, for example by a chemical reaction, a physical detachment process and / or mechanical removal.
  • the detachment process of the polymer hybrid material from the solid section can at moderate ambient temperature, for. B. in the range of 20 ° C to 30 ° C, preferably in the higher temperature range of 30 ° C to 95 ° C, z. B. from 50 ° C to 90 ° C, or for example in a lower temperature range between 1 ° C and 19 ° C.
  • the elevated temperature range may allow for shortening of a chemical release reaction due to an increase in the reaction rate, e.g. Example, in the case of using a sacrificial layer between the polymer hybrid material and the solid.
  • the detachment may take place in aqueous solution, advantageously at a pH in the range 2-6.
  • the dissolution process may take the form of a treatment with a solution of a suitable apolar solvent, for example Ambient temperatures in the range of 1 ° C to 50 ° C are preferred and from 20 ° C to 40 ° C are particularly preferred.
  • a suitable apolar solvent for example Ambient temperatures in the range of 1 ° C to 50 ° C are preferred and from 20 ° C to 40 ° C are particularly preferred.
  • a particular advantage here is the detachment without a temperature effect on the film.
  • This can advantageously aliphatic and aromatic hydrocarbons such.
  • As carbon tetrachloride, are applied.
  • additional forces can be introduced into the polymer hybrid material to be detached and the boundary surface to the solid body section, since a solvent treatment can cause a very strong reversible swelling of the polymer-hybrids material, whereby the detachment is simplified as a whole.
  • a combination with the above-described detachment mechanism of the sacrificial layer and the treatment with a suitable non-polar solvent can be carried out - also without affecting the temperature of the film.
  • the material removal takes place here preferably in the longitudinal direction of the solid.
  • the pressure for adjusting the propagation velocity, in particular the mean propagation velocity, of the main crack is adjusted.
  • the pressure is preferably adjusted or adjusted such that the propagation velocity, in particular the average propagation velocity, of the main tear in the radial direction of the donor substrate is less than 5 cm / second or less than 3 cm / second or less than 1 cm / second, in particular less than 0 , 5cm / second and preferably less than 0.1cm / second.
  • the mean propagation velocity of the main crack in the radial direction of the donor substrate is thus preferably between 0.5 cm / second and 0.1 cm / second, in particular between 0.4 cm / second and 0.15 cm / second or between 0.35 cm / second and 0, 2cm / second.
  • This embodiment is advantageous because a very rapid crack propagation speed can be achieved by a slow crack propagation speed.
  • the method comprises the step of conditioning the donor substrate. During the conditioning of the donor substrate, modifications are preferably produced by means of laser beams inside the donor substrate, the modifications providing a removal region along which a separation of the solid body layer from the donor substrate takes place.
  • the laser beams penetrate preferably over the surface of the donor substrate in the donor substrate, which is a part of the separated solid state after separation.
  • This embodiment is advantageous because a detachment region or a release plane or a release contour for guiding the crack can be predetermined very precisely.
  • the modifications are preferably produced by multiphoton excitation, in particular two-photon excitation.
  • a modification preferably represents a phase transformation of a starting material.
  • SiC can be converted into Si and C.
  • Si and C have a larger volume than SiC, resulting in compressive stresses due to the transformation.
  • the donor substrate has crystal lattice planes inclined to a major planar surface, the major surface delimiting the donor substrate in the longitudinal direction of the donor sub-start, with a screen grid normal to a primary surface normal in a first direction, the laser beams be introduced via the main surface for changing the material properties of the donor substrate in the range of at least one laser focus in the donor substrate or for generating the modifications in the donor substrate in the donor substrate, wherein the laser focus is formed by laser beams emitted by a laser, wherein the change of the material property by changing the penetration of the laser beams into the donor substrate forms a linear shape, wherein the changes of the material property on at least one r generating plane, wherein the crystal lattice planes of the donor substrate are inclined with respect to the plane of production, wherein the line-shaped shape is inclined to a cut line resulting at the interface between the generation plane and the crystal lattice plane, whereby due to the changed material property the donor substrate in the form of subcritical cracks tears,
  • This embodiment is advantageous in that the crack growth is limited perpendicular to the writing direction in that the line-shaped shape is inclined relative to a cutting line or cutting line that results at the interface between the generation plane and the crystal lattice plane.
  • the modifications per writing line are thus not generated in the same crystal lattice planes.
  • the first 1-5% of the modifications per line of writing can only be a fraction, in particular less than 75% or less than 50% or less than 25% or less than 10% or no crystal lattice planes
  • the writing line is preferably longer than 1cm or longer than 0cm or longer than 20cm or up to 20cm long or up to 30cm long or up to 40cm long or up to 50cm long.
  • it will produce significantly fewer modifications in the same crystal lattice planes, thereby limiting crack propagation along these crystal lattice planes.
  • the change of the material property can preferably be understood as the generation of a material modification or the generation of a crystal lattice defect, in particular the effecting of a locally limited phase change.
  • the laser radiation is in accordance with another preferred embodiment of the present invention with pulse lengths of less than 2ns or less than 1 ns, in particular less than 800ps or less than 600ps or less than 500ps or less than 400ps or less than 300ps or less than 200ps, or less than 150ps, or less than 100ps, or less than 50ps, or less than 10ps.
  • the donor substrate comprises or consists of a chemical compound, such as silicon carbide, wherein the chemical compound preferably comprises one or more substances selected from the third, fourth and / or fifth main group of the Periodic Table of the Elements / or the 12th subgroup of the periodic table of the elements, wherein the material change represents a predetermined transformation of the starting material, in particular silicon carbide, of the donor substrate into a target material, in particular silicon and carbon.
  • a chemical compound such as silicon carbide
  • the chemical compound preferably comprises one or more substances selected from the third, fourth and / or fifth main group of the Periodic Table of the Elements / or the 12th subgroup of the periodic table of the elements, wherein the material change represents a predetermined transformation of the starting material, in particular silicon carbide, of the donor substrate into a target material, in particular silicon and carbon.
  • the material conversion is in accordance with a further preferred embodiment of the present invention, a decomposition of the chemical compound in several or in all individual components or elements.
  • This embodiment is advantageous because the targeted decomposition of the chemical compound of the solid for a separation of the solid content on the most suitable combination of materials can be defined.
  • a solid-state starting material is preferably understood to be a monocrystalline, polycrystalline or amorphous material. Monocrystallines having a strongly anisotropic structure are preferred because of the strong anisotropic atomic binding forces.
  • the solid-state starting material preferably has a material or a combination of materials from one of the main groups 3, 4, 5 and / or subgroup 12 of the Periodic Table of the Elements, in particular a combination of elements of the 3rd, 4th, 5th main group and the subgroup 12th , such as Zinc oxide or cadmium telluride, on.
  • the semiconductor starting material may include, for example, silicon, gallium arsenide GaAs, gallium nitride GaN, silicon carbide SiC, indium phosphide InP, zinc oxide ZnO, aluminum nitride AIN, germanium, gallium (III) oxide Ga203, alumina AI203 (sapphire), gallium phosphide GaP, indium arsenide InAs, indium nitride InN, aluminum arsenide AlAs or diamond.
  • the solid or the workpiece (eg wafer) or the donor substrate preferably comprises a material or a combination of materials from one of the main groups 3, 4 and 5 of the Periodic Table of the Elements, such as SiC, Si, SiGe, Ge, GaAs, InP, GaN, Al 2 O 3 (sapphire), AIN. Particularly preferably, the solid has a combination of the fourth, third and fifth group of the periodic table occurring elements.
  • Conceivable materials or material combinations are eg gallium arsenide, silicon, Silicon carbide, etc.
  • the solid may have a ceramic (eg Al 2 O 3 - alumina) or consist of a ceramic, preferred ceramics are eg Perovskitkeramiken (such as Pb-, O-, Ti / Zr-containing ceramics) in general and lead Magnesium niobates, barium titanate, lithium titanate, yttrium aluminum garnet, especially yttrium aluminum garnet crystals for solid state laser applications, SAW (surface acoustic wave) ceramics such as lithium niobate, gallium orthophosphate, quartz, calcium titanate, etc. in particular.
  • the solid body thus preferably has a semiconductor material or a ceramic material or particularly preferably the solid body consists of at least one semiconductor material or a ceramic material.
  • the solid is preferably an ingot or a wafer.
  • the solid is particularly preferably a material which is at least partially transparent for laser beams. It is therefore still conceivable that the solid body has a transparent material or partially made of a transparent material, such as sapphire, or is made. Further materials which may be used here as solid material alone or in combination with another material include "wide band gap" materials, InAISb, high-temperature superconductors, in particular rare earth cuprates (eg YBa2Cu307) It is additionally or alternatively conceivable that In the present case, it is possible to use as photomask material any photomask material known to the date of filing, and particularly preferably combinations thereof Further, or alternatively, the solid may comprise or consist of silicon carbide (SiC).
  • the solids content is preferably a solid state layer, in particular a wafer with at least 300mm diameter.
  • the aforementioned object is also achieved by a method for separating at least one solid state layer, in particular a solid state disk, from a donor substrate according to claim 14.
  • the method according to the invention preferably comprises at least the following steps: providing a donor substrate, generating or arranging a voltage generating layer on a donor substrate axially delimiting, in particular flat, surface of the donor substrate, arranging a pressurizing element of a pressurizing device at a predetermined distance to the voltage generating layer or in a predetermined Distance to the separation area for bringing into contact with the voltage generation layer during the separation,
  • the contact side of the pressurizing member is disposed at a distance in the axial direction of the surface of the voltage generating layer, which is less than the shortest distance between the axial center of the donor substrate and the (radial) peripheral surface of the donor substrate.
  • the distance is between 0.001 and 0.9 times, in particular between 0.001 times and 0.5 times or between 0.001 times and 0.1 times, the length of the shortest distance between the axial center of the donor substrate and the (radial) Peripheral surface of the donor substrate.
  • the distance between the contact side of the pressurizing element and the surface of the voltage generating layer is less than 5 cm, in particular less than 2 cm or less than 1 cm or less than 0.5 cm or less than 0.1 cm.
  • the processed surface or the processed layer of the donor substrate in particular a device layer layer is not or only slightly bent, the polymer or the receiving layer is disposed on another donor substrate surface or the polymer or the recording layer not is arranged on the processed layer.
  • the temperature of the receiving layer or polymer layer is at least in the majority of separated from a donor substrate solid state layers or wafers at a minimum distance to the processed layer, the minimum distance preferably a multiple, in particular at least 2-fold or at least 5-fold or at least 10 times or at least 20 times the thickness of the receiving layer or polymer layer. This is advantageous because the thermal load of the processed layer is significantly reduced.
  • this transfer wafer may, for example, be held by a holding device for further stabilization.
  • the bonding is preferably carried out by means of direct bonding or temporarily with a bonding tape, wherein the compound, for example by means of radiation, in particular UV radiation, or heat, in particular temperatures above 20 ° C or above 50 ° C or above 100 ° C, in particular up to 110 ° C or up to 200 ° C or up to 500 ° C, or an alternative treatment can be lifted.
  • the object mentioned at the outset is also achieved by a system for separating solid-state disks from a donor substrate.
  • the system preferably comprises at least one laser device for generating modifications in the interior of the dispenser substrate for forming a separation region for guiding a separation tear, a tempering device for cooling a separation layer applied to the donor substrate for triggering the separation tear, a pressurization device with at least one pressurization element for pressurizing the Donor substrate arranged voltage generation layer during the propagation of the separation crack, wherein the
  • a significantly improved line control can thus be achieved, comprising two or more of the following treatment steps: generation of modifications inside the solid or donor substrate by means of a laser and / or application of a polymer film on the donor substrate, in particular by means of a lamination device, and / or splitting the donor substrate in the region or along the release plane or the detachment region produced by the modifications due to the introduction of an external force into the donor substrate, in particular by means of a cooling device or an ultrasound device, and / or performing a surface treatment or surface treatment of the surface of the remaining residual donor substrate exposed by the split, in particular by means of a machining device, such as a cattle, and / or a chemical, in particular etching, surface treatment.
  • the solution according to the invention is therefore also advantageous because the deflection of the separated or separated solid layer is reduced to a minimum or completely prevented by the application of force.
  • This also makes it possible to split off a solid-state layer, in particular a composite structure, from the donor substrate on which semi-finished or finished functional components, in particular means (devices), e.g. Transistors, or resistors or processors are arranged or generated.
  • devices e.g. Transistors, or resistors or processors are arranged or generated.
  • a higher temperature in the midplane (device level) is possible, which also reduces the risk of damage to the means.
  • a significant improvement in the processes for the MEMS and / or compound wafer treatment is provided.
  • the tempering device is preferably a cooling device, in particular a device for providing at least one or exactly one functional fluid, in particular liquid nitrogen or nitrogenous nitrogen. At least one pressurizing element is provided with a heating element.
  • FIG. 1 a schematically shows a device for pressurizing one with a
  • FIG. 1 b schematically shows an arrangement according to FIG. 1 b, the donor substrate having been modified in its interior by means of laser beams, FIG.
  • FIG. 4b schematically a device for limiting a deflection movement of the separated solid layer portions, schematically a pressurizing device with a plurality of pressurizing elements, schematically a device for applying different surface portions of the voltage generating layer with different pressures, schematically a device for applying different surface portions of the voltage generating layer with different pressures and for limiting the deflection movement of the solid state disk , and schematically a plan view of the device shown in Fig. 4b.
  • Fig. 1a shows a device for separating solid layers 1 (see Fig. 2) of a
  • the device preferably has a holding device 14 for
  • Voltage generating layer 4 in particular consisting of a polymer material or having a polymer material arranged. The remote from the donor substrate 2
  • the pressurizing device 8 may, for example, have or be coupled to an electrical or hydraulic or pneumatic or mechanical force generating device, in particular an actuator, for generating a force for pressing the pressurizing element 6 against the voltage generating layer 4.
  • the pressurization by means of the force generating device is adjustable.
  • a tempering device 26 is preferably carried out a thermal loading, in particular cooling, the voltage generating layer 4.
  • the thermal loading of the voltage generating layer 4 can be indirectly or exclusively indirectly, ie it can, for example, first the pressurizing element 6 are tempered, then the temperature generating layer 4 tempered. Furthermore, it is conceivable that temporally a direct and indirect temperature control of the voltage generating layer 4 takes place.
  • Tempering 26 preferably provides a functional fluid 28, in particular nitrogen in preferably liquid or nebeiförmiger form ready. Further, the pressurizing member 6 can be pressed against predetermined portions of the voltage generating layer 4, and at the same time, other predetermined portions of the same voltage generating layer 4 can be tempered by the tempering means 26.
  • the pressurizing means 8 effects pressurization on portions of the voltage generating layer 4 or on the entire voltage generating layer 4 disposed between the pressurizing member 6 and the donor substrate 2 at the same time as voltage generation.
  • the pressurization device 8 thus counteracts force peaks which occur when the glass transition of the voltage generation layer 4 is reached. Furthermore, the pressure application device 8 preferably also reduces a deflection of the split off portions of the solid body layer 1, as a result of which the wedge effect resulting from the crack propagation occurs at a significantly smaller angle, as a result of which the crack runs much more stable in the predefined release plane 12 (see FIG.
  • the reference character D indicates the preferred pressure application direction.
  • FIG. 1b essentially corresponds to the illustration shown in FIG. 1a, wherein the donor substrate 2 has modifications 10 which were produced by means of laser beams.
  • the modifications 10 provide a detachment region 12 for guiding a tear for separating the solid state layer 1 from the donor substrate 2.
  • FIG. 2 shows that the pressurizing element 6 can have one or more passage element (s) 18 or line element (s) 18 for guiding the functional fluid.
  • this illustration shows a situation in which the pressurizing element 6 is used for limiting the deflection movement of the separated solid state portions.
  • the contact side 16 of the pressurization element 6 is preferably spaced apart at a distance AS from the exposed surface of the voltage generation layer 4 or with respect to the release plane 12.
  • the distance AS is preferably a fraction or smaller than a defined fraction of the shortest distance between the radial peripheral surface O and the axial center L.
  • FIG. 3 a shows schematically that a plurality of differently shaped pressurizing elements 6 a, 6 b, 6 c can be part of the pressurizing device 8.
  • the pressurization elements 6a, 6b, 6c shown here have different heights.
  • When pressing 6a on the voltage generating layer 4 thus takes place a greater compression of the voltage generating layer 4 than when pressing 6c.
  • a greater pressure is preferably built up than in the edge region, and this can also be configured vice versa.
  • the area 6b is least or not pressed against the donor substrate 4 according to this embodiment.
  • FIG. 3b shows schematically that pressurization from the "thicker" side is possible, whereby the thin side is prevented from bending by a holding device 14 (eg vacuum holder, or else by holding tape) at least the plurality of separation steps occurring in dividing a donor substrate 2 into a plurality of wafers are closer to a processed layer than to a surface to which a pressurization element is brought into contact
  • a holding device 14 eg vacuum holder, or else by holding tape
  • the surface on which the pressurizing element is brought into contact delimits the donor substrate 2 in the donor substrate longitudinal direction, thereby ensuring that at least partially finished devices on the wafer are bent or bent only in a limited frame that it is necessary to apply a surface to the device side.
  • the bonding layer or the bonding interface 42 can be formed, for example, by an adhesive layer, in particular an adhesive tape, or by a phase change substance, in particular a fluid, in particular a liquid. If the bonding interface 42 is formed by a phase change substance, then the phase change substance preferably at freezing point has a freezing point of less than 20 ° C or less than 10 ° C or less than 5 ° C or 0 ° C or less than 0 ° C or less. 5 ° C or less than -20 ° C.
  • the phase change substance is preferably water, in particular demineralized water (deionized water).
  • the bonding substrate 44 and / or the processed surface 40 are preferably wetted or moistened with the phase change substance, the phase change substance being in a first state of aggregation. Subsequently, the processed surface 40 is applied or placed on the bonding substrate 44, in particular pressed. Furthermore, a temperature control of the phase change substance preferably takes place below the freezing point of the phase change substance, whereby the phase change substance is thereby converted from the first state of aggregation, in particular liquid, into a second state of aggregation, in particular solid. The cooling can be effected in this case by taking place for the temperature control of the recording layer cooling.
  • phase change substance is heated to a temperature below its freezing point before the temperature of the recording layer. This is advantageous because this bonding interface is reversible producible and can be canceled. Furthermore, no toxic substances are particularly preferably required in this case.
  • FIG. 4a shows an exemplary embodiment according to which the pressurizing device 8 has a plurality of mutually movable pressurizing elements 6a, 6b and 6c.
  • These pressurizing elements 6a, 6b, 6c can each be coupled via power transmission means 20, 22, 24 to one or more actuators for providing identical or different contact forces.
  • the individual pressurizing elements 6a, 6b, 6c can be deflected independently of one another, in particular if the force acting on the respective pressurizing element 6a, 6b, 6c exceeds a threshold force or minimum force defined for the respective pressurizing element 6a, 6b, 6c.
  • Fig. 4b shows an embodiment in which the pressurizing member 6b is moved further into the voltage generating layer 4 than the other pressurizing members 6a and 6c.
  • the pressurizing device 8 can have a round contact side 16.
  • the pressurizing elements 6a, 6b, 6c are designed accordingly.
  • the contact side 16 it is likewise possible in the context of the present invention for the contact side 16 to have a shape deviating from a round shape, in particular a shape having one or more straight edges, in particular a rectangular shape.

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Abstract

La présente invention concerne un procédé, selon la revendication 1, de séparation d'au moins une couche de solide (1), notamment un disque de solide, d'un substrat donneur (2). Le procédé selon l'invention comprend ici de préférence au moins les étapes suivantes : fourniture d'un substrat donneur (2), génération ou disposition d'une couche de génération de tension (4) au niveau d'une surface (5), notamment plane, du substrat donneur (2) qui délimite le substrat donneur (2) dans le sens axial, pressage d'au moins un élément d'application de pression (6) d'un dispositif d'application de pression (8) au niveau d'au moins une part prédéfinie de la couche de génération de tension (4) en vue de presser la couche de génération de tension (4) contre la surface (5), séparation de la couche de solide (1) du substrat donneur (2) par sollicitation thermique de la couche de génération de tension (4), ce qui produit des tensions mécaniques dans le substrat donneur (2). Une fissure destinée à séparer une couche de solide (1) est produite par les tensions mécaniques et l'élément d'application de pression (6) est pressé contre la couche de génération de tension (4) pendant la sollicitation thermique de la couche de génération de tension (4).
EP18765357.1A 2017-08-11 2018-08-10 Dispositif et procédé pour solliciter des couches de génération de tension avec une pression en vue d'un guidage amélioré d'une fissure de séparation Pending EP3664952A1 (fr)

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DE102017007585.9A DE102017007585A1 (de) 2017-08-11 2017-08-11 Vorrichtung und Verfahren zum Beaufschlagen von Spannungserzeugungsschichten mit Druck zum verbesserten Führen eines Abtrennrisses
PCT/EP2018/071814 WO2019030400A1 (fr) 2017-08-11 2018-08-10 Dispositif et procédé pour solliciter des couches de génération de tension avec une pression en vue d'un guidage amélioré d'une fissure de séparation

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CN114178710A (zh) * 2020-08-24 2022-03-15 奥特斯(中国)有限公司 部件承载件及其制造方法
CN114400214B (zh) * 2022-01-07 2023-02-10 广东气派科技有限公司 一种改善Flip chip晶圆电路层裂纹的方法
CN115592257B (zh) * 2022-12-13 2023-04-18 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种从激光改质后的晶体上剥离晶片的机械剥离装置
CN116238058B (zh) * 2023-05-12 2023-07-11 山东理工大学 一种脆性材料高效低损加工方法

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CN111032269A (zh) 2020-04-17
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DE102017007585A1 (de) 2019-02-14
US20200215648A1 (en) 2020-07-09

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