EP3633803B1 - Passive q-switch pulse laser device, processing apparatus, and medical apparatus - Google Patents

Passive q-switch pulse laser device, processing apparatus, and medical apparatus Download PDF

Info

Publication number
EP3633803B1
EP3633803B1 EP18810009.3A EP18810009A EP3633803B1 EP 3633803 B1 EP3633803 B1 EP 3633803B1 EP 18810009 A EP18810009 A EP 18810009A EP 3633803 B1 EP3633803 B1 EP 3633803B1
Authority
EP
European Patent Office
Prior art keywords
passive
laser device
switch pulse
pulse laser
polarizing element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP18810009.3A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3633803A4 (en
EP3633803A1 (en
Inventor
Masanao Kamata
Sumito MIZUMURA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Group Corp
Original Assignee
Sony Group Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Group Corp filed Critical Sony Group Corp
Publication of EP3633803A1 publication Critical patent/EP3633803A1/en
Publication of EP3633803A4 publication Critical patent/EP3633803A4/en
Application granted granted Critical
Publication of EP3633803B1 publication Critical patent/EP3633803B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
    • A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F9/00—Methods or devices for treatment of the eyes; Devices for putting-in contact lenses; Devices to correct squinting; Apparatus to guide the blind; Protective devices for the eyes, carried on the body or in the hand
    • A61F9/007—Methods or devices for eye surgery
    • A61F9/008—Methods or devices for eye surgery using laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1685—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/17—Solid materials amorphous, e.g. glass
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
    • A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
    • A61B2018/2035—Beam shaping or redirecting; Optical components therefor
    • A61B2018/20553—Beam shaping or redirecting; Optical components therefor with special lens or reflector arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

Definitions

  • the present disclosure relates to a passive Q-switch pulse laser device, a processing apparatus, and a medical apparatus.
  • a Q-switch pulse laser device has been developed.
  • the Q-switch pulse laser device is a laser device that is able to radiate pulsed laser light having energy at a considerable level or more at predetermined intervals.
  • a passive Q-switch pulse laser device has been actively developed that changes a Q factor with a passive element such as a saturable absorber.
  • NPL 1 to 3 disclose technology of disposing a polarizing element between a laser medium and a saturable absorber in an optical resonator.
  • the length of the optical resonator increases. This increases the pulse width (i.e., the time width of the pulse increases), decreases the peak intensity of the laser light, or makes it difficult to miniaturize the optical resonator itself or the laser device.
  • PTL 1 discloses technology of disposing a saturable absorber serving as a crystal having crystallographic axes in three directions in an optical resonator to have different transmittances with respect to the respective pieces of laser emission light in polarization directions orthogonal to each other, thereby causing laser oscillation in a polarization direction along a crystallographic axis in which the transmittance is high.
  • the generated laser light has optical isotropy and the dependency of the transmittance on crystallographic axes is not obtained. Accordingly, the laser device is unable to control the oscillation polarization direction with the crystallographic axis.
  • an object of the present disclosure is to provide a novel and improved passive Q-switch pulse laser device, processing apparatus, and medical apparatus that are able to generate pulsed laser light having a stable polarization direction while suppressing an increase in the pulse width of the pulsed laser light and a decrease in the peak intensity of the pulsed laser light, and miniaturizing an optical resonator and a laser device in a case where an amorphous material is used as the base material of a laser medium.
  • a passive Q-switch pulse laser device including: a laser medium; and a saturable absorber.
  • the laser medium is disposed between a pair of reflection means included in an optical resonator.
  • the laser medium is excited by specific excitation light to emit emission light.
  • the saturable absorber is disposed on an optical axis of the optical resonator and on a downstream side of the laser medium between the pair of reflection means.
  • the saturable absorber has a transmittance increased by absorption of the emission light.
  • At least one of the pair of reflection means is a polarizing element, said polarizing element being a photonic crystal polarizing element including a photonic crystal.
  • the polarizing element has different reflectances with respect to the respective pieces of emission light in polarization directions orthogonal to each other.
  • the laser device is characterized in that said photonic crystal comprises a plurality of layers each having a thickness substantially the same as the wavelength of the emission light.
  • a processing apparatus including: a passive Q-switch pulse laser device; and an excitation light source section.
  • the passive Q-switch pulse laser device includes a laser medium, and a saturable absorber.
  • the laser medium is disposed between a pair of reflection means included in an optical resonator.
  • the laser medium is excited by specific excitation light to emit emission light.
  • the saturable absorber is disposed on an optical axis of the optical resonator and on a downstream side of the laser medium between the pair of reflection means.
  • the saturable absorber has a transmittance increased by absorption of the emission light.
  • At least one of the pair of reflection means is a polarizing element, said polarizing element being a photonic crystal polarizing element including a photonic crystal.
  • the polarizing element has different reflectances with respect to the respective pieces of emission light in polarization directions orthogonal to each other.
  • the laser device is characterized in that said photonic crystal comprises a plurality of layers each having a thickness substantially the same as the wavelength of the emission light.
  • the excitation light source section outputs the excitation light.
  • the processing apparatus processes a workpiece with the emission light emitted from the passive Q-switch pulse laser device.
  • a medical apparatus including: a passive Q-switch pulse laser device; and an excitation light source section.
  • the passive Q-switch pulse laser device includes a laser medium, and a saturable absorber.
  • the laser medium is disposed between a pair of reflection means included in an optical resonator.
  • the laser medium is excited by specific excitation light to emit emission light.
  • the saturable absorber is disposed on an optical axis of the optical resonator and on a downstream side of the laser medium between the pair of reflection means.
  • the saturable absorber has a transmittance increased by absorption of the emission light.
  • At least one of the pair of reflection means is a polarizing element, said polarizing element being a photonic crystal polarizing element including a photonic crystal.
  • the polarizing element has different reflectances with respect to the respective pieces of emission light in polarization directions orthogonal to each other.
  • the laser device is characterized in that said photonic crystal comprises a plurality of layers each having a thickness substantially the same as the wavelength of the emission light.
  • the excitation light source section outputs the excitation light.
  • the medical apparatus irradiates a portion of a living body with the emission light emitted from the passive Q-switch pulse laser device.
  • the present disclosure it is possible to generate pulsed laser light having a stable polarization direction while suppressing an increase in the pulse width of the pulsed laser light and a decrease in the peak intensity of the pulsed laser light, and miniaturizing an optical resonator and a laser device in a case where an amorphous material is used as the base material of a laser medium.
  • the Q-switch pulse laser device is a laser device that is able to radiate pulsed laser light having energy at a considerable level or more at predetermined intervals.
  • the Q-switch pulse laser device advances pumping while lowering the Q factor of the optical resonator (causing much loss), thereby bringing about a population inversion state. Then, sharply increasing the Q factor when the population inversion state reaches a predetermined level instantaneously causes laser oscillation, and short pulsed laser light having a peak value higher than or equal to a considerable level is given off.
  • the Q-switch pulse laser device includes an active Q-switch pulse laser device that changes the Q factor with an active element such as an electro-optic modulator, and a passive Q-switch pulse laser device that changes the Q factor with a passive element such as a saturable absorber.
  • the active Q-switch pulse laser device has a large active element, and is thus unable to shorten the intervals between optical resonators. Accordingly, the active Q-switch pulse laser device is unable to shorten the time width of pulses. In addition, the active Q-switch pulse laser device also has the disadvantage of requiring high voltages to drive the active element.
  • the passive Q-switch pulse laser device is able to overcome the disadvantages of the active Q-switch pulse laser device described above, and thus has been actively developed in recent years.
  • the passive Q-switch pulse laser device As the configuration of the passive Q-switch pulse laser device, a configuration in which a saturable absorber is disposed together with a laser medium between a pair of reflection means included in an optical resonator is conceivable.
  • the configuration when the emission light from the laser medium enters the saturable absorber, the emission light is absorbed by the saturable absorber.
  • the density of electrons of the saturable absorber in the excitation order gradually increases with the absorption of the emission light.
  • the saturable absorber becomes transparent. At this time, the Q factor of the optical resonator sharply increases, laser oscillation occurs, and laser light is generated.
  • NPL 1 to 3 above disclose technology of disposing a polarizing element between a laser medium and a saturable absorber.
  • the length of the optical resonator increases. This increases the pulse width (i.e., the time width of the pulse increases), decreases the peak intensity of the laser light, or makes it difficult to miniaturize the optical resonator itself or the laser device.
  • PTL 1 above discloses technology of disposing a saturable absorber serving as a crystal having crystallographic axes in three directions in an optical resonator to have different transmittances with respect to the respective pieces of laser emission light in polarization directions orthogonal to each other, thereby causing laser oscillation in a polarization direction along a crystallographic axis in which the transmittance is high.
  • the generated laser light has optical isotropy and the dependency of the transmittance on crystallographic axes is not obtained. Accordingly, the laser device is unable to control, for example, the oscillation polarization direction with the crystallographic axis.
  • a laser medium including an amorphous material as the base material has been developed in recent years, and the optical characteristics of the laser light generated by the laser medium have been improved.
  • a laser medium including an amorphous material as the base material is characteristically easy to increase in area while maintaining a uniform composition.
  • the passive Q-switch pulse laser device includes a laser medium disposed between a pair of reflection means included in an optical resonator and excited to emit light, and a saturable absorber disposed on the optical axis of the optical resonator and on the downstream side of the laser medium between the pair of reflection means.
  • the saturable absorber absorbs the emission light emitted from the laser medium and has a transmittance increased by the absorption.
  • At least one of the pair of reflection means is a polarizing element.
  • the polarizing element has different reflectances with respect to the respective pieces of emission light in the polarization directions orthogonal to each other.
  • the reflection means including a polarizing element having a polarization selecting function has different reflectances with respect to the respective pieces of emission light in the orthogonal polarization directions. This causes laser oscillation for the emission light in the polarization direction in which the reflectance is higher. In other words, the polarization direction of the emission light is controlled by the polarizing element, and the laser light having a stable polarization direction is consequently generated.
  • At least one of the pair of reflection means is a polarizing element.
  • the passive Q-switch pulse laser device according to the present embodiment is able to not only generate pulsed laser light having a stable polarization direction, but also suppress an increase in pulse width and a decrease in peak intensity caused by an increase in the length of the optical resonator, allowing the optical resonator and the laser device to be miniaturized.
  • the laser medium and the saturable absorber each include an amorphous material as the base material, but this is not limitative.
  • the laser medium or the saturable absorber may each include a crystalline material as appropriate as the base material. It should be noted that, in a case where the laser medium includes a single-crystal material as the base material, both the transmittance dependent on a crystallographic axis and the reflectance of a polarizing element have to be taken into consideration. Laser oscillation occurs in the polarization direction that causes less loss.
  • FIG. 1 is a diagram illustrating an example of the configuration of the passive Q-switch pulse laser device according to the present embodiment.
  • a passive Q-switch pulse laser device 10 includes a laser medium 11 disposed between a pair of reflection means 12 (illustrated as a reflection means 12A and a reflection means 12B in FIG. 1 ) included in an optical resonator, and excited to emit emission light 21, an excitation light source section 13 that outputs excitation light 22 for exciting the laser medium 11, and a saturable absorber 14 disposed on the optical axis of the optical resonator and on the downstream side of the laser medium 11 between the pair of reflection means 12.
  • the saturable absorber 14 absorbs the emission light 21 emitted from the laser medium 11 and has a transmittance increased by the absorption.
  • one of the pair of reflection means 12 is a polarizing element having a polarization selecting function.
  • the excitation light source section 13 emits the excitation light 22 that excites the laser medium 11. More specifically, the excitation light source section 13 is disposed outside the pair of reflection means 12, and emits the excitation light 22 having a wavelength of about 808 [nm] that excites Nd 3+ : YAG ceramics, which is, for example, the laser medium 11.
  • the excitation light source section 13 includes a semiconductor laser element that emits the excitation light 22, and an optical system (such as a lens) that causes the excitation light 22 to enter the laser medium 11 via the reflection means 12A.
  • the excitation light source section 13 may generate the excitation light 22 with an element other than a semiconductor laser element as long as it is possible to emit the excitation light 22 that is able to excite the laser medium 11.
  • the material used for the excitation light source section 13 may be a crystalline material or an amorphous material.
  • the excitation light source section 13 does not have to include an optical system such as a lens.
  • At least one of the pair of reflection means 12 is a polarizing element having a polarization selecting function.
  • the reflection means 12A of the pair of reflection means 12 that is provided on the excitation light source section 13 side may be a polarizing element
  • the reflection means 12B disposed to be opposed to the reflection means 12A may be a polarizing element
  • the reflection means 12A and the reflection means 12B may be polarizing elements. It should be noted that this specification describes, as an example, a case where the reflection means 12B is a polarizing element.
  • the reflection means 12A of the pair of reflection means 12 that is provided on the excitation light source section 13 side is, for example, a mirror that transmits the excitation light 22 having a wavelength of about 808 [nm] emitted from the excitation light source section 13, and reflects the emission light 21 of about 1064 [nm] emitted from the laser medium 11 at a predetermined reflectance.
  • the use of a mirror for the reflection means 12A is merely an example, and the mirror may be changed as appropriate.
  • an element including a dielectric multi-layered film may be used for the reflection means 12A. In a case where a dielectric multi-layered film is used, the thickness of the layers is generally one quarter of the laser oscillation wavelength.
  • the total number of layers amounts to several to several hundred layers, and SiO 2 , SiN, or the like may be used. It should be noted that the above is an example, and this is not limitative as a working example.
  • the reflection means 12B installed to be opposed to the reflection means 12A is a polarizing element in which the transmittance and reflectance of the emission light 21 differ in accordance with the polarization directions.
  • the member used as the polarizing element according to the present embodiment is not particularly limited.
  • linearly polarized light is achieved by the polarizing element according to the present embodiment, this is not limitative.
  • Various polarization states such as circularly polarized light, elliptically polarized light, and radially polarized light may be achieved by the polarizing element according to the present embodiment.
  • the member used as the polarizing element according to the present embodiment is described below in detail.
  • Nd 3+ : YAG ceramics is used for the laser medium 11, and the laser medium 11 is excited by the excitation light 22 having a wavelength of about 808 [nm]. Then, the laser medium 11 emits light having a wavelength of about 1064 [nm] at the time of transition from the upper order to the lower order. It should be noted that the following refers to the light emitted from the laser medium 11 as emission light 21.
  • the saturable absorber 14 is a member that includes, for example, Cr 4+ : YAG ceramics, and characteristically decreases the light absorbing rate with light absorption saturated.
  • the saturable absorber 14 functions as a passive Q-switch in the passive Q-switch pulse laser device 10.
  • the saturable absorber 14 absorbs the emission light 21 once entered by the emission light 21 from the laser medium 11. This absorption causes the transmittance of the saturable absorber 14 to increase.
  • the saturable absorber 14 becomes transparent, thereby increasing the Q factor of the optical resonator to cause laser oscillation.
  • the saturable absorber 14 is disposed between the laser medium 11 and the reflection means 12B as an example. It should be noted that the respective end faces of the saturable absorber 14 and the reflection means 12B in the direction vertical to the optical axis may be bonded to each other. More specifically, the respective end faces of the saturable absorber 14 and the reflection means 12B are bonded to each other by a bonding layer having transparency. The transparency of the bonding layer allows the emission light 21 to pass through the bonding layer and cause laser oscillation appropriately.
  • any material is used for the bonding layer.
  • the material of the bonding layer may be a photocurable resin or a thermosetting resin, or may be a material such as YAG, sapphire, or diamond having transparency to an oscillation wavelength.
  • the bonding layer has any transmittance, it is preferable that the transmittance of the bonding layer be 10% or more with respect to the oscillation wavelength to more efficiently cause laser oscillation.
  • the configuration of the passive Q-switch pulse laser device 10 according to the present embodiment has been described above. Next, in the present embodiment, a member of a polarizing element used for at least one of the pair of reflection means 12 is described.
  • polarizing element As the polarizing element according to the present embodiment, a photonic crystal polarizing element in which a photonic crystal is used.
  • a wire grid polarizing element in which a wire grid is used, or a polarizing element in which the orientation of resin materials is used may be used, but are not claimed and are not part of the present invention as defined by the appending claims.
  • the passive Q-switch pulse laser device 10 gives off laser light with high power
  • the electric field amplitude inside the optical resonator is large.
  • a heavier load is imposed on the polarizing element, and it is thus more preferable to use a polarizing element that may withstand the required power.
  • photonic crystals are able to exhibit higher resistance to loads associated with laser oscillation, depending on the material, structure, or the like.
  • wire grids characteristically absorb the emission light 21, while the photonic crystals do not have such characteristics. This facilitates the photonic crystal polarizing element to achieve higher oscillation efficiency than the wire grid polarizing element does.
  • a case where a photonic crystal polarizing element in which a photonic crystal is used as the polarizing element according to the present embodiment as described above is described.
  • a difference between the reflectances of the photonic crystal polarizing element be 1[%] or more with respect to the respective pieces of emission light 21 in polarization directions orthogonal to each other.
  • this is not limitative.
  • the difference between the reflectances of the photonic crystal polarizing element with respect to the respective pieces of emission light 21 in the polarization directions orthogonal to each other may be changed as appropriate.
  • the thickness of each layer of the photonic crystal included in the photonic crystal polarizing element is substantially the same as the wavelength of the emission light 21.
  • the number of layers stacked in the photonic crystal be about several cycles to several hundreds of cycles. However, this is not limitative. The number of layers stacked in the photonic crystal may be changed as appropriate.
  • the material of the photonic crystal for example, SiO 2 , SiN, Si, Ta 2 O 5 , or the like may be used. However, these are not limitative. The material of the photonic crystal may be changed as appropriate.
  • such a photonic crystal may be formed by alternately stacking SiO 2 , Si, Nb 2 O 5 , Ta 2 O 5 , Al 2 O 3 , and the like on a substrate having a periodic structure in advance by vapor deposition or sputtering.
  • FIG. 2 is a table illustrating a combination of the laser medium 11 and the saturable absorber 14 applicable to the passive Q-switch pulse laser device 10.
  • Nd:YAG that emits the emission light 21 having a wavelength of about 1064 [nm]
  • Nd: YVO 4 that emits the emission light 21 having a wavelength of about 1064 [nm]
  • Yb: YAG that emits the emission light 21 having a wavelength of about 1030 [nm] or 1050 [nm]
  • Nd YAG
  • Nd YVO 4
  • Yb YAG
  • Cr YAG
  • SESAM semiconductor Saturable Absorber Mirror
  • Er glass that emits the emission light 21 having a wavelength of about 1540 [nm]
  • Er glass that emits the emission light 21 having a wavelength of about 1540 [nm]
  • Co: MALO, Co 2+ : LaMgAl, U 2+ : CaF 2 , Er 3+ : CaF 2 , or the like may be used as the saturable absorber 14.
  • the passive Q-switch pulse laser device 10 includes the laser medium 11 disposed between the pair of reflection means 12 included in an optical resonator and excited to emit the emission light 21, and the saturable absorber 14 disposed on the optical axis of the optical resonator and on the downstream side of the laser medium 11 between the pair of reflection means 12.
  • the saturable absorber 14 absorbs the emission light 21 emitted from the laser medium 11 and has a transmittance increased by the absorption.
  • At least one of the pair of reflection means 12 is a polarizing element, said polarizing element being a photonic crystal polarizing element including a photonic crystal.
  • the laser device is characterized in that said photonic crystal comprises a plurality of layers each having a thickness substantially the same as the wavelength of the emission light.
  • the passive Q-switch pulse laser device 10 is able to not only generate pulsed laser light having a stable polarization direction, but also suppress an increase in pulse width and a decrease in peak intensity caused by an increase in the length of the optical resonator, allowing the optical resonator and the laser device to be miniaturized.
  • the passive Q-switch pulse laser device 10 may be applied to various apparatuses, systems, and the like.
  • the passive Q-switch pulse laser device 10 according to the present embodiment may be applied to an apparatus used to process metals, semiconductors, dielectrics, resins, living bodies, or the like, an apparatus used for LIDAR (Light Detection and Ranging or Laser Imaging Detection and Ranging), an apparatus used for LIBS (Laser Induced Breakdown Spectroscopy), an apparatus used for intraocular refractive surgery (for example, LASIK or the like), an apparatus used for LIDAR for observing the atmosphere such as depth sensing or aerosol, or the like.
  • an apparatus to which the passive Q-switch pulse laser device 10 according to the present embodiment is applied is not limited to the above.
  • the passive Q-switch pulse laser device 10 according to the present embodiment is applied to a processing apparatus or a medical apparatus, it is possible to adopt the configuration in which the passive Q-switch pulse laser device 10 according to the present embodiment is used as a laser light source, a shutter, a mirror, and a power adjusting mechanism are controlled by a control driver, and a target on an automated stage is irradiated by using a condenser lens, for example, as illustrated in FIG. 3 .

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Surgery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Public Health (AREA)
  • Animal Behavior & Ethology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Veterinary Medicine (AREA)
  • General Health & Medical Sciences (AREA)
  • Vascular Medicine (AREA)
  • Otolaryngology (AREA)
  • Molecular Biology (AREA)
  • Ceramic Engineering (AREA)
  • Medical Informatics (AREA)
  • Chemical & Material Sciences (AREA)
  • Lasers (AREA)
  • Laser Surgery Devices (AREA)
EP18810009.3A 2017-05-29 2018-04-24 Passive q-switch pulse laser device, processing apparatus, and medical apparatus Active EP3633803B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017105456 2017-05-29
PCT/JP2018/016608 WO2018221083A1 (ja) 2017-05-29 2018-04-24 受動ｑスイッチパルスレーザー装置、加工装置および医療装置

Publications (3)

Publication Number Publication Date
EP3633803A1 EP3633803A1 (en) 2020-04-08
EP3633803A4 EP3633803A4 (en) 2020-05-20
EP3633803B1 true EP3633803B1 (en) 2022-12-14

Family

ID=64455775

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18810009.3A Active EP3633803B1 (en) 2017-05-29 2018-04-24 Passive q-switch pulse laser device, processing apparatus, and medical apparatus

Country Status (6)

Country Link
US (1) US11183809B2 (zh)
EP (1) EP3633803B1 (zh)
JP (1) JP7140114B2 (zh)
CN (1) CN110741516B (zh)
TW (1) TWI791017B (zh)
WO (1) WO2018221083A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4033617A4 (en) * 2019-11-28 2022-11-16 Sony Group Corporation LASER ELEMENT, LASER ELEMENT MANUFACTURING METHOD, LASER DEVICE AND LASER AMPLIFIER ELEMENT
DE112021001306T5 (de) * 2020-02-27 2023-01-26 Sony Group Corporation Optischer resonator, komponente für einen optischen resonator und laservorrichtung
JPWO2022249581A1 (zh) * 2021-05-26 2022-12-01
JPWO2022249582A1 (zh) * 2021-05-26 2022-12-01

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008117528A1 (ja) * 2007-03-24 2008-10-02 Photonic Lattice, Inc. 一様でない偏光分布を有するレーザー共振器及びレーザー装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4601288A (en) * 1984-02-24 1986-07-22 Myers John D Laser device and method
US6373865B1 (en) 2000-02-01 2002-04-16 John E. Nettleton Pseudo-monolithic laser with an intracavity optical parametric oscillator
JP4530348B2 (ja) 2004-09-06 2010-08-25 大学共同利用機関法人自然科学研究機構 受動ｑスイッチレーザ装置
JP2009218232A (ja) 2008-03-06 2009-09-24 Sony Corp レーザ光源装置及びこれを用いた画像生成装置
JP5234457B2 (ja) 2008-06-06 2013-07-10 国立大学法人東北大学 レーザー共振器
US8908738B2 (en) 2010-10-01 2014-12-09 Physical Sciences, Inc. Ring resonator with a holographic reflector
EP2557441B1 (en) * 2011-08-11 2014-11-12 Ludwig-Maximilians-Universität München Dynamical fabry-pérot tuneable filter device
JP2015200681A (ja) 2012-08-27 2015-11-12 シャープ株式会社 液晶表示装置
JP6281935B2 (ja) 2013-10-25 2018-02-21 大学共同利用機関法人自然科学研究機構 Ｑスイッチレーザー装置
JPWO2017060967A1 (ja) * 2015-10-06 2018-07-26 株式会社島津製作所 波長変換装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008117528A1 (ja) * 2007-03-24 2008-10-02 Photonic Lattice, Inc. 一様でない偏光分布を有するレーザー共振器及びレーザー装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JIAN-LANG LI ET AL: "Efficient excitations of radially and azimuthally polarized Nd^3+:YAG ceramic microchip laser by use of subwavelength multilayer concentric gratings composed of Nb_2O_5/SiO_2", OPTICS EXPRESS, vol. 16, no. 14, 7 July 2008 (2008-07-07), pages 10841 - 267, XP055684505, DOI: 10.1364/OE.16.010841 *

Also Published As

Publication number Publication date
US20200176946A1 (en) 2020-06-04
CN110741516A (zh) 2020-01-31
TW201902062A (zh) 2019-01-01
TWI791017B (zh) 2023-02-01
JP7140114B2 (ja) 2022-09-21
EP3633803A4 (en) 2020-05-20
CN110741516B (zh) 2023-05-12
US11183809B2 (en) 2021-11-23
JPWO2018221083A1 (ja) 2020-05-28
WO2018221083A1 (ja) 2018-12-06
EP3633803A1 (en) 2020-04-08

Similar Documents

Publication Publication Date Title
EP3633803B1 (en) Passive q-switch pulse laser device, processing apparatus, and medical apparatus
JP5232782B2 (ja) 精密に制御された波長変換平均出力を有する光源の制御方法、および波長変換システム
JPH11258645A (ja) 波長変換装置
US9203210B2 (en) Q-switched laser device
US10148057B2 (en) Microchip laser
US9553419B2 (en) Shared multi-wavelength laser resonator with gain selected output coupling
CN113423529A (zh) 激光加工机、加工方法和激光光源
JP2020127000A (ja) 圧縮パルス幅を有する受動ｑスイッチ型固体レーザ
JP7396299B2 (ja) レーザ装置
KR20160033593A (ko) 레이저 발진장치
JP5557956B2 (ja) 受動ｑスイッチ型固体レーザ装置
CN110582902A (zh) 二极管泵浦激光器的无源q开关
CN115280608A (zh) 光振荡器、光振荡器的设计方法和激光装置
Vodchits et al. Nonlinear refractive index of vanadate crystals in the near IR region
US9450370B2 (en) Planar waveguide laser device
JP5341096B2 (ja) モード同期ファイバーレーザーおよびモード同期ファイバーレーザーを用いたパルスレーザー光の発振方法
RU2459328C1 (ru) Оптический квантовый генератор двухмикронного диапазона длин волн
CN109742646A (zh) 一种抑制腔内泵浦连续波光参量振荡器弛豫振荡的装置
US20240243542A1 (en) Optical resonator and laser device
WO2023080242A1 (ja) 光学素子、光学装置および光学素子の製造方法
CN112771735B (zh) 光振荡器
EP3881402B1 (en) High power laser converter based on patterned srb4bo7 or pbb407 crystal
Šulc et al. Lasing properties of new Nd 3+-doped tungstate, molybdate, and fluoride materials under selective optical pumping
Beznosenko et al. COMPACT 1.531 μ m WAVELENGTH LASER ON PbMoO 4: ND 3+ CRYSTAL WITH SRSSELF-CONVERSION AND DIODE PUMPING
Cavalcanti et al. Simple set-up for measuring low transmission losses of optical materials used in laser cavities

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20191108

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

A4 Supplementary search report drawn up and despatched

Effective date: 20200421

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 3/08 20060101ALI20200415BHEP

Ipc: H01S 3/17 20060101ALI20200415BHEP

Ipc: H01S 3/06 20060101ALN20200415BHEP

Ipc: H01S 3/0941 20060101ALN20200415BHEP

Ipc: A61B 18/20 20060101ALI20200415BHEP

Ipc: H01S 3/16 20060101ALI20200415BHEP

Ipc: H01S 3/00 20060101ALI20200415BHEP

Ipc: H01S 3/113 20060101AFI20200415BHEP

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RAP3 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SONY GROUP CORPORATION

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 3/06 20060101ALN20220516BHEP

Ipc: H01S 3/0941 20060101ALN20220516BHEP

Ipc: H01S 3/17 20060101ALI20220516BHEP

Ipc: H01S 3/16 20060101ALI20220516BHEP

Ipc: H01S 3/08 20060101ALI20220516BHEP

Ipc: H01S 3/00 20060101ALI20220516BHEP

Ipc: A61B 18/20 20060101ALI20220516BHEP

Ipc: H01S 3/113 20060101AFI20220516BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 3/06 20060101ALN20220602BHEP

Ipc: H01S 3/0941 20060101ALN20220602BHEP

Ipc: H01S 3/17 20060101ALI20220602BHEP

Ipc: H01S 3/16 20060101ALI20220602BHEP

Ipc: H01S 3/08 20060101ALI20220602BHEP

Ipc: A61B 18/20 20060101ALI20220602BHEP

Ipc: H01S 3/113 20060101AFI20220602BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 3/06 20060101ALN20220623BHEP

Ipc: H01S 3/0941 20060101ALN20220623BHEP

Ipc: H01S 3/17 20060101ALI20220623BHEP

Ipc: H01S 3/16 20060101ALI20220623BHEP

Ipc: H01S 3/08 20060101ALI20220623BHEP

Ipc: A61B 18/20 20060101ALI20220623BHEP

Ipc: H01S 3/113 20060101AFI20220623BHEP

INTG Intention to grant announced

Effective date: 20220708

RIN1 Information on inventor provided before grant (corrected)

Inventor name: MIZUMURA, SUMITO

Inventor name: KAMATA, MASANAO

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602018044315

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1538237

Country of ref document: AT

Kind code of ref document: T

Effective date: 20230115

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG9D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20221214

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230314

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1538237

Country of ref document: AT

Kind code of ref document: T

Effective date: 20221214

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230315

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230528

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230414

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230414

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602018044315

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

26N No opposition filed

Effective date: 20230915

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20230424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230424

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20230430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230430

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230424

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230430

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230430

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20221214

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240320

Year of fee payment: 7