EP3607581A1 - Circuit de commutation refroidi des deux côtés - Google Patents

Circuit de commutation refroidi des deux côtés

Info

Publication number
EP3607581A1
EP3607581A1 EP18715007.3A EP18715007A EP3607581A1 EP 3607581 A1 EP3607581 A1 EP 3607581A1 EP 18715007 A EP18715007 A EP 18715007A EP 3607581 A1 EP3607581 A1 EP 3607581A1
Authority
EP
European Patent Office
Prior art keywords
ceramic
substrate
circuit
component
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP18715007.3A
Other languages
German (de)
English (en)
Inventor
Roland Dilsch
Harald KREß
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ceramtec GmbH
Original Assignee
Ceramtec GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ceramtec GmbH filed Critical Ceramtec GmbH
Publication of EP3607581A1 publication Critical patent/EP3607581A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the invention relates to a component consisting of a first ceramic substrate, a ceramic fin cooler or a ceramic liquid-cooled radiator or a ceramic heat sink (air or liquid cooled) with a top and bottom, wherein on the top of a metallization is applied to the on a Connecting means a circuit of a semiconductor material is mounted with its bottom.
  • ceramic substrates of Al 2 O 3 , AIN or Si 3 N 4 carry at least one-sided metallization (DCB-Cu, thick-film Cu, Ag, W-Ni-Au), on which in turn fixed by pressure, solder , sintered silver, silver glue or similar a circuit is mounted.
  • DCB-Cu thick-film Cu, Ag, W-Ni-Au
  • a heat sink made of aluminum or similar. glued or soldered.
  • the circuits are so maximum connected on one side with an electrically insulating heat sink.
  • the upper free side of the circuit is at most gas cooled.
  • Under a circuit is generally understood a chip or a transistor.
  • the invention has for its object to improve a component according to the preamble of claim 1 so that the circuit on both sides, i. cooled both on its bottom and on its top.
  • the double-sided cooling of the circuits by elements with high thermal conductivity and simultaneously high electrical conductivity to increase the efficiency of the assembly. Furthermore, it should be ensured that the component retains its full functionality when heated or in total with temperature changes and does not fail.
  • this object is achieved by a component having the features of claim 1.
  • a connecting means is applied to the a ceramic Power / Wärnn einssubstrrat is applied with its underside and on the upper side of the current / heat conduction substrate via a metallization, a second ceramic substrate, wherein the ceramic current / heat conduction substrate for cooling metal-filled thermal-electrical vias (Vias) contains, wherein in both variants of the cooling the top and bottom of the power / heat conduction substrate (6) are electrically connected together, the circuit is cooled on both sides, that is both on its bottom and on its top.
  • the double-sided cooling of the circuit by elements with high thermal conductivity and simultaneously high electrical conductivity increase the efficiency of the assembly of the circuit.
  • the metal in the vias of the ceramic current / heat conduction substrate rests on both the metallization of the second substrate and on the connecting means, which is located on the circuit.
  • the ceramic of the current / heat conduction substrate has an expansion coefficient which is adapted to the expansion coefficient of the semiconductor material of the circuit.
  • the component retains its full functionality due to heating or total changes in temperature and does not fail.
  • the expansion coefficients of the stom / bathleitsubstrates and the circuit differ by a maximum of 3ppm voneinader.
  • the current / heat conduction substrate is a cuboid or a flat substrate.
  • the circuit is preferably a silicon circuit, SiC circuit, a GaN circuit such as a diode or a transistor.
  • the metallizations are preferably made of DCB-Cu, AMB-CU, thick-film Cu, Ag or W-Ni-Au and / or are sintered with the ceramic substrate metallizations. Sintered metallizations are intimately bonded to the ceramic and thus have excellent heat transfer from the circuit to the ceramic.
  • the connecting means is preferably a solder, sintered silver or thermal adhesive.
  • the plated-through holes are made of Cu or Ag and the substrates of aluminum nitride, aluminum oxide or silicon nitride. These ceramics have a high thermal conductivity.
  • cooling elements such as fins or the like, are arranged on the underside of the first ceramic substrate, or the substrate itself is embodied as a heat-air or liquid-flow-through heat sink.
  • This current / heat conduction substrate contains metal-filled thermal-electrical vias filled with, for example, Cu or Ag. If one chooses aluminum nitride as a substrate material, its coefficient of expansion of about 4, 7 ppm / K is close to the silicon of the chip
  • connection of these Viakeramik can be done both on the side of the circuit as well as on the other side of the metallized ceramic substrate via solder, silver paste or silver sintered layer to a second ceramic substrate or directly when burning the copper paste with the copper layer of the metallized connect the upper substrate.
  • liquid-flowed ceramic coolers or those with ceramic fins instead of the ceramic current / heat-conducting substrates.
  • FIG. 1 shows a component 9 consisting of a first ceramic substrate 1 with an upper 1b and lower side 1a, wherein a metallization 2 is applied to the upper side 1b, on which a connection means 3 a circuit 4 of a semiconductor material with its Bottom is mounted.
  • FIG. 2 shows a component 9 according to the prior art. The component consists of a first ceramic substrate 1 with a top 1 b and bottom 1 a, wherein on the top 1 b, a metallization 2 is applied, on which a connection means 3, a circuit 4 is mounted with its bottom.
  • a ceramic current / heat conduction substrate 6 is applied with its underside via a connection means 5 and a second ceramic substrate 8 is arranged on the current / heat conduction substrate 6 via a metallization 7, wherein the ceramic current / heat conduction substrate Contains 6 metal-filled thermal-electrical vias 1 1 and / or cooling channels to guide a coolant.
  • the ceramic substrates 1, 8 are preferably plate-shaped and consist of aluminum oxide, silicon nitride or preferably aluminum nitride, which has a very high thermal conductivity.
  • the metallizations are preferably made of DCB-Cu AMB-CU, thick-film Cu, Ag or W-Ni-Au and / or are sintered with the ceramic substrate 1, 8.
  • the circuit 4 is a diode or a transistor in the illustrated embodiment. ,
  • the connecting means 3, 5 are preferably solder, sintered silver or silver glue.
  • the plated-through holes 11 are made, for example, of Cu or Ag.
  • cooling elements are preferably arranged, not shown in Figure 2.
  • the cooling elements 1 and 8 may contain fins for air cooling. But it can also be fluid cooling boxes.
  • the ceramic current / heat conduction substrate 6 serves to dissipate the waste heat of the circuit 4 in the ceramic substrate 8 and on the other hand can also be used for electrical coupling of the circuit 4 to the metallization 7.
  • the current / heat conduction substrate 6 is also made of aluminum oxide, silicon nitride or preferably aluminum nitride. Through its metal-filled thermal-electrical vias (Vias) 1 1, the waste heat is transported and made an electrical connection.
  • the plated-through holes (vias) 1 1 extend at right angles to the surface of the current / heat conduction substrate 6.
  • the reference numeral 10 electrical connections are marked.
  • FIG. 3 shows that a further layer of the metallization 7 can be applied between the connection means 5 and the ceramic current / heat conduction substrate 6. This is preferably connected to the metallization layer 7, which is arranged between the current / heat conduction substrate 6 and a second ceramic substrate 8, via the metal-filled thermal-electrical vias in material connection.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

L'invention concerne un composant (9) comprenant un premier substrat céramique (1), un élément de refroidissement céramique à ailettes ou un élément de refroidissement céramique traversé par un liquide présentant une face supérieure (1b) et une face inférieure (1a), un revêtement métallique (2) étant appliqué sur la face supérieure (1b), et un circuit de commutation (4) étant monté par sa face inférieure sur ce revêtement métallique par l'intermédiaire d'un moyen de connexion (3). L'objectif de cette invention et de refroidir, de part et d'autre, le circuit de commutation (4) du composant (9) par l'intermédiaire d'éléments présentant à la fois une thermoconductivité élevée et une électroconductivité élevée, et ainsi d'accroître l'efficacité de l'ensemble. A cet effet, un moyen de connexion (5) est ménagé sur la face supérieure du circuit de commutation (4), un substrat céramique électroconducteur/thermoconducteur (6) est appliqué sur ce moyen de connexion, par la face inférieure, et un deuxième substrat céramique (8) est agencé sur la face supérieure du substrat électroconducteur/thermoconducteur (6), au-dessus d'un revêtement métallique (7), ce substrat céramique électroconducteur/thermoconducteur (8) comportant des trous d'interconnexion (vias) (11) métallisés thermo-électriques à des fins de refroidissement et/ou des canaux de refroidissement conçus pour guider un réfrigérant. Dans les deux variantes de refroidissement, la face supérieure et la face inférieure du substrat électroconducteur/thermoconducteur (6) sont reliées électriquement.
EP18715007.3A 2017-04-06 2018-03-28 Circuit de commutation refroidi des deux côtés Withdrawn EP3607581A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017205906 2017-04-06
PCT/EP2018/057953 WO2018184948A1 (fr) 2017-04-06 2018-03-28 Circuit de commutation refroidi des deux côtés

Publications (1)

Publication Number Publication Date
EP3607581A1 true EP3607581A1 (fr) 2020-02-12

Family

ID=61868513

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18715007.3A Withdrawn EP3607581A1 (fr) 2017-04-06 2018-03-28 Circuit de commutation refroidi des deux côtés

Country Status (7)

Country Link
US (1) US20200075455A1 (fr)
EP (1) EP3607581A1 (fr)
JP (1) JP2020516054A (fr)
KR (1) KR20190137086A (fr)
CN (1) CN110431662A (fr)
TW (1) TW201838114A (fr)
WO (1) WO2018184948A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019124593A1 (de) * 2019-09-12 2021-03-18 Tdk Electronics Ag Kühlsystem
KR20210076862A (ko) * 2019-12-16 2021-06-24 주식회사 아모센스 파워모듈용 세라믹 기판 및 이를 포함하는 파워모듈
EP3852138B1 (fr) * 2020-01-20 2023-11-08 Infineon Technologies Austria AG Module électronique comprenant un boîtier à semi-conducteur connecté à un dissipateur thermique fluide
CN115398756A (zh) * 2020-03-31 2022-11-25 Ipg光子公司 高功率激光电子设备
CN112750600B (zh) * 2020-12-29 2022-05-17 华进半导体封装先导技术研发中心有限公司 一种基于微流道的可调式电感及其制造方法
US20230108475A1 (en) * 2021-10-04 2023-04-06 Formfactor, Inc. Thermal management techniques for high power integrated circuits operating in dry cryogenic environments

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US7557434B2 (en) * 2006-08-29 2009-07-07 Denso Corporation Power electronic package having two substrates with multiple electronic components
DE102007002807B4 (de) * 2007-01-18 2014-08-14 Infineon Technologies Ag Chipanordnung
KR101519813B1 (ko) * 2007-04-24 2015-05-14 세람테크 게엠베하 표면이 금속화된 세라믹 베이스를 구비하는 부품
US8431445B2 (en) * 2011-06-01 2013-04-30 Toyota Motor Engineering & Manufacturing North America, Inc. Multi-component power structures and methods for forming the same
DE102011083223B4 (de) * 2011-09-22 2019-08-22 Infineon Technologies Ag Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte
DE102012106244B4 (de) * 2012-07-11 2020-02-20 Rogers Germany Gmbh Metall-Keramik-Substrat
JP6154383B2 (ja) * 2012-08-23 2017-07-05 日産自動車株式会社 絶縁基板、多層セラミック絶縁基板、パワー半導体装置と絶縁基板の接合構造体、及びパワー半導体モジュール
JP6217756B2 (ja) * 2013-10-29 2017-10-25 富士電機株式会社 半導体モジュール
US20160014878A1 (en) * 2014-04-25 2016-01-14 Rogers Corporation Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom
US9941234B2 (en) * 2015-05-28 2018-04-10 Ut-Battelle, Llc Integrated packaging of multiple double sided cooling planar bond power modules

Also Published As

Publication number Publication date
TW201838114A (zh) 2018-10-16
US20200075455A1 (en) 2020-03-05
WO2018184948A1 (fr) 2018-10-11
JP2020516054A (ja) 2020-05-28
KR20190137086A (ko) 2019-12-10
CN110431662A (zh) 2019-11-08

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