EP3587621B1 - Verfahren zur herstellung einer aluminiumleiterplatte - Google Patents

Verfahren zur herstellung einer aluminiumleiterplatte Download PDF

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Publication number
EP3587621B1
EP3587621B1 EP18758454.5A EP18758454A EP3587621B1 EP 3587621 B1 EP3587621 B1 EP 3587621B1 EP 18758454 A EP18758454 A EP 18758454A EP 3587621 B1 EP3587621 B1 EP 3587621B1
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EP
European Patent Office
Prior art keywords
equal
aluminum
base material
metal powder
particles
Prior art date
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Active
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EP18758454.5A
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English (en)
French (fr)
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EP3587621A1 (de
EP3587621A4 (de
Inventor
Seiji Kuroda
Hiroshi Araki
Akira Hasegawa
Makoto Watanabe
Atsushi Sakai
Yoshitaka Taniguchi
Suzuya Yamada
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Denka Co Ltd
National Institute for Materials Science
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Denka Co Ltd
National Institute for Materials Science
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Publication of EP3587621A1 publication Critical patent/EP3587621A1/de
Publication of EP3587621A4 publication Critical patent/EP3587621A4/de
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/087—Coating with metal alloys or metal elements only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1333—Deposition techniques, e.g. coating
    • H05K2203/1344—Spraying small metal particles or droplets of molten metal

Definitions

  • the present invention relates to a method for manufacturing an aluminum circuit board. Further, the present disclosure relates to an aluminum circuit board and an electronic device using the method for manufacturing the aluminum circuit board.
  • An aluminum circuit board including a ceramic base material such as alumina, and a circuit layer formed on both surfaces of the ceramic base material has been practically realized as a semiconductor device that is used in a power module or the like.
  • the ceramic base material for a ceramic circuit board has been required to higher heat conductivity, in addition to high electrical insulating properties.
  • the application of the ceramic base material having high heat conductivity such as aluminum nitride, has been considered.
  • a copper circuit is provided on the ceramic base material having high heat conductivity, there is a problem that a crack tends to be easily generated in the vicinity of a joining portion between the ceramic base material and the copper circuit, due to repeated heat cycles or a temperature change in the service environment during the operation of such semiconductor element.
  • Non Patent Literature 1 Integrated characterization of cold sprayed aluminum coatings, W.B. Choi, L. Li, V. Luzin, R. Neiser, T. Gnaupel-Herold, H.J. Prask, S. Sampath, A. Gouldstone, Acta Materialia, Volume 55, Issue 3, February 2007, Page 857-866 .
  • the brazing method it is necessary to join the ceramic board material with the aluminum foil or the aluminum alloy foil at a high temperature by applying a pressure over all the area all the time.
  • the pressurization is performed by mechanical means such as by placing the laminated body in a graphite jig, and pushing from both end surfaces by screwing. In such a method, there is a problem that productivity is not sufficiently high.
  • An aluminum layer can also be formed by conventional thermal spraying methods in which powder is melted and is sprayed to a base material.
  • thermal spraying there is a problem that aluminum has high reactivity with oxygen and nitrogen at a high temperature above the melting point, and thus, in a conventional thermal spraying device where thermal spraying is performed in the atmosphere, a film having a low density and rich in oxide and nitride is formed.
  • warm spraying has been also considered as one of new methods of forming metal layers.
  • the warm spraying method is a technology in which film formation is performed by spraying metal powder to a base material at a high velocity, along with carrier gas that is heated within the temperature range to soften the metal powder (for example, refer to Patent Literature 4).
  • the present invention has been made in consideration of the circumstances described above, and a main object thereof is to provide a method in which it is possible to easily manufacture an aluminum circuit board including a metal layer that contains aluminum and/or an aluminum alloy, and is formed on a ceramic base material with high adhesiveness.
  • the present invention provides a method for manufacturing an aluminum circuit board according to the appended claims, including: a step of spraying heated metal powder containing aluminum particles and/or aluminum alloy particles to a ceramic base material, and thereby forming a metal layer on a surface of the ceramic base material.
  • the temperature of at least a part of the metal powder (greater than or equal to 80 mass% of the total amount of the metal powder) is higher than or equal to the softening temperature of the metal powder and lower than or equal to the melting point of the metal powder at a time point of reaching the surface of the ceramic base material.
  • the softening temperature is a temperature that is defined as a value of melting point ⁇ 0.6 in the absolute temperature scale.
  • the velocity of at least a part of the metal powder is greater than or equal to 450 m/s and less than or equal to 1000 m/s at the time point of reaching the surface of the ceramic base material.
  • the particle diameter D 10 which is the diameter at which 10% of the sample's mass is comprised of particles with a diameter less than this value, is greater than or equal to 10 ⁇ m
  • the particle diameter D 90 which is the diameter at which 90% of the sample's mass is comprised of particles with a diameter less than this value, is less than or equal to 50 ⁇ m.
  • the aluminum alloy particles are formed of aluminum, magnesium, and residual inevitable impurities, ant the content of magnesium is less than or equal to 7.5 mass% on the basis of the mass of the aluminum alloy particles.
  • the metal powder is sprayed with a warm spraying device comprising a tubular body including an outlet nozzle and a barrel portion, the outlet nozzle includes a divergent nozzle, the barrel portion is a straight cylindrical barrel connected to the outlet nozzle in a continuous manner, and the metal powder is fed from a powder feed port provided between the outlet nozzle and the barrel portion to the inlet of the barrel portion.
  • a metal layer that contains aluminum and/or an aluminum alloy and has high adhesiveness can be easily formed on the surface of a ceramic base material.
  • the velocity of the metal powder is less than 450 m/s, there is a tendency that the formed metal layer on the surface of the ceramic base material tends to easily peel off, or its adhesion to the base plate tends to be insufficient.
  • the velocity of the metal powder is greater than 1000 m/s, there is a tendency that the metal layer that is already attached onto the surface of the ceramic base material tends to be removed by erosion.
  • the velocity of the metal powder at the time point of reaching the surface of the ceramic base material may be greater than or equal to 750 m/s and less than or equal to 900 m/s.
  • the temperature of the metal powder is lower than the softening temperature, the deformation of the metal powder is suppressed, and there is a tendency that the adhesiveness of the metal powder to the ceramic base material and the density of the metal layer decrease.
  • the temperature of the metal powder is higher than the melting point, there is a tendency that the metal powder is oxidized, and in particular, when the velocity of the metal powder is high, there is a tendency that the metal powder that collides with the ceramic base material is disintegrated and blown away, and thus, it is difficult to form a metal layer.
  • a particle diameter D 10 which is the diameter at which 10% of the sample's mass is comprised of particles with a diameter less than this value may be greater than or equal to 10 ⁇ m
  • the particle diameter D 90 of a cumulative mass percentage of 90% D 90 which is the diameter at which 90% of the sample's mass is comprised of particles with a diameter less than this value, may be less than or equal to 50 ⁇ m.
  • D 10 of the metal powder may be greater than or equal to 20 ⁇ m, and D 90 of the metal powder may be less than or equal to 45 ⁇ m.
  • the aluminum particles and the aluminum alloy particles are respectively metal particles containing aluminum and an aluminum alloy as their main component.
  • the main component indicates a component that is contained at a ratio of greater than or equal to 90 mass% with respect to the whole.
  • a ratio of the main component may be greater than or equal to 95 mass%.
  • the aluminum alloy particles may be particles formed of aluminum as the main component, with magnesium, and residual inevitable impurities.
  • the content of magnesium may be less than or equal to 7.5 mass% on the basis of the mass of the aluminum alloy particles.
  • the metal powder be heated such that the temperature of most (for example, greater than or equal to 80 mass% of the total amount) of the metal powder sprayed onto the ceramic base material is higher than or equal to the softening temperature of the metal powder and lower than or equal to the melting point of the metal powder at the time point of reaching the surface of the ceramic base material.
  • the ratio of metal powder of which the temperature at the time point of reaching the surface of the ceramic base material is lower than the softening temperature of the metal powder may be less than or equal to 10 mass%
  • the ratio of metal powder of which the temperature at the time point of reaching the surface of the ceramic base material is higher than the melting point of the metal powder may be less than or equal to 10 mass%
  • the temperature of the rest of the metal powder at the time point of reaching the surface of the ceramic base material may be higher than or equal to the softening temperature of the metal powder and lower than or equal to the melting point of the metal powder.
  • the metal powder may contain aluminum alloy particles.
  • the method for manufacturing the aluminum circuit board may further include: a step of spraying a first metal layer formed on the surface of the ceramic base material, and thereby forming a second metal layer on the surface of the first metal layer.
  • the thickness of the first metal layer may be less than or equal to 150 ⁇ m. Since aluminum alloy (in particular, an aluminum-magnesium alloy) has high adhesiveness with respect to the ceramic base material as compared to aluminum, it is preferred that the first metal layer directly provided on the surface of the ceramic base material contain aluminum alloy as the main component.
  • an aluminum circuit board including: a ceramic base material; and a metal layer formed by performing film formation of metal powder containing aluminum particles and/or aluminum alloy particles on a surface of the ceramic base material by the warm spraying method.
  • the electric resistivity of the metal layer is less than or equal to 5 ⁇ 10 -8 ⁇ m.
  • the electric resistivity of the metal layer may be less than or equal to 4 ⁇ 10 -8 ⁇ m.
  • a lower limit of the electric resistivity of the metal layer is not particularly specified, but in general, is greater than 2.65 ⁇ 10 -8 ⁇ m.
  • Still another aspect of the present invention provides an electronic device, including the aluminum circuit board described above.
  • the method for manufacturing an aluminum circuit board of the present invention has advantages that aluminum and ceramic are joined together without using molten aluminum or a brazing material, and by using a mask, it is possible to manufacture an aluminum circuit board without etching.
  • the present invention is capable of manufacturing a metal layer having higher adhesiveness and smaller electric resistance with superior efficiency for mass production.
  • a “powder” used in the present specification indicates an aggregate having fluidity that is configured of a plurality of particles having different particle diameters.
  • a laser diffraction and scattering method is widely used, and the methods of measurement and description of the results thereof are based on JIS Z 8825 "Particle Diameter Analysis-Laser Diffraction and Scattering Method".
  • particle diameter D 10 indicates the diameter at which 10% of the sample's mass is comprised of particles with a diameter less than this value.
  • particle diameter D 90 indicates the diameter at which 90% of the sample's mass is comprised of particles with a diameter less than this value.
  • D 50 as defined as above is referred to as the median diameter.
  • FIG. 1 is a sectional view illustrating an embodiment of an aluminum circuit board.
  • An aluminum circuit board 50 illustrated in FIG. 1 includes a ceramic base material 1, and metal layers 3a and 3b that are respectively provided with being in contact with both surfaces of the ceramic base material 1.
  • Each of the metal layers 3a and 3b is a layer that is formed by spraying heated metal powder, and usually has a circuit pattern that is connected to a semiconductor element. The details of a method for forming the metal layers 3a and 3b will be described below.
  • FIG. 2 is also a sectional view illustrating another embodiment of an aluminum circuit board.
  • the aluminum circuit board 100 illustrated in FIG. 2 further includes second metal layers 5a and 5b in addition to the same configuration as that of the aluminum circuit board 50, that are provided on the surfaces of the metal layers 3a and 3b attached to the ceramic base material and used as the first metal layers respectively.
  • the second metal layers 5a and 5b can configure a circuit layer.
  • the thickness of the metal layers 3a and 3b is not particularly limited, and for example, may be from 200 ⁇ m to 600 ⁇ m. Similarly, the total thickness of the metal layers 3a and 3b as the first metal layer, and the second metal layers 5a and 5b, for example, may be from 200 ⁇ m to 600 ⁇ m. The thickness of the metal layers 3a and 3b as the first metal layer may be less than or equal to 150 ⁇ m.
  • the ceramic base material 1 can be selected from ceramic materials having suitable insulating properties.
  • the ceramic base material 1 should also has high thermal conductivity, and examples thereof include aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), and aluminum oxide (Al 2 O 3 ).
  • the thickness of the ceramic base material 1 is not particularly limited, and for example, may be from 0.2 mm to 1.0 mm.
  • FIG. 3 is a schematic view illustrating an embodiment of a method for manufacturing the aluminum circuit board exemplified in FIG. 1 or FIG. 2 .
  • metal powder P consisting of many metal particles is heated, and is accelerated to a predetermined velocity by a warm spraying device 10, and is sprayed to the surface of the ceramic base material 1.
  • the metal particles P may be aluminum particles, aluminum alloy particles, or a combination thereof.
  • the aluminum alloy particles may be particles formed of aluminum, magnesium of less than or equal to 7.5 mass% on the basis of the mass of the aluminum alloy particles, and residual inevitable impurities.
  • the warm spraying device 10 includes a tubular body 20, a fuel inlet 21, an oxygen inlet 22, an ignition plug 23, a cooling water inlet 24, a cooling water outlet 25, an inert gas inlet 26, and a powder feed port 27.
  • the tubular body 20 includes a combustion chamber 11, a mixing chamber 12, an outlet nozzle 13, and a barrel portion 14.
  • An injection port 15 is provided at the end of the barrel portion 14.
  • fuel gas FG such as gasified liquid fuel that may be kerosene or the like or propane gas or liquefied petroleum gas is mixed with oxygen gas O 2 , and the mixed gas is ignited by the ignition plug 23. As the mixed gas is combusted, the temperature and pressure of the combustion gas increases.
  • inert gas IG is fed and mixed into the combustion gas flowing out from the combustion chamber 11 in order to adjust the combustion gas temperature.
  • outlet nozzle 13 thus generated high-temperature and high-pressure mixed gas expands through a divergent nozzle, and becomes a high-velocity jet, and thus, is ejected to the barrel portion 14.
  • the barrel portion 14 is a straight cylindrical barrel connected to the outlet nozzle 13 in a continuous manner.
  • the metal particles P i.e., the metal powder, are fed from the powder feed port 27 provided between the outlet nozzle 13 and the barrel portion 14 to the inlet of the barrel portion 14.
  • the whole body of the warm spraying device is cooled by cooling water.
  • the metal particles P are sprayed towards the ceramic base material 1 from the injection port 15 at a high speed, along with the mixed gas of the combustion gas and the inert gas IG, and thus, the metal particles P are deposited on the ceramic base material 1, and the metal layer 3 a is formed.
  • the temperature of at least a part of the metal powder sprayed to the ceramic base material 1 be higher than or equal to a softening temperature of the metal powder and lower than or equal to the melting point of the metal powder when reaching the surface of the ceramic base material 1.
  • the softening temperature is defined as a value of melting point ⁇ 0.6 in the absolute temperature scale.
  • the velocity of at least a part of the metal powder sprayed to the ceramic base material 1 be greater than or equal to 450 m/s and less than or equal to 1000 m/s when reaching the surface of the ceramic base material 1.
  • the ratio of metal powder of which the temperature at the time point of reaching the surface of the ceramic base material 1 is lower than or equal to the softening temperature of the metal powder may be less than or equal to 10 mass%
  • the ratio of metal powder of which the temperature at the time point of reaching the surface of the ceramic base material 1 is higher than the melting point of the metal powder may be less than or equal to 10 mass%
  • the temperature of the rest of the metal powder at the time point of reaching the surface of the ceramic base material may be higher than or equal to the softening temperature of the metal powder and lower than or equal to the melting point of the metal powder.
  • the temperature and the velocity of the metal particles P (or the metal powder) at the time point of reaching the surface of the ceramic base material 1 can be adjusted by suitably changing the particle size distribution of the metal powder, the flow rate of the inert gas, the distance between the injection port 15 and the surface of the ceramic base material 1, and the like.
  • the distance between the injection port 15 and the surface of the ceramic base material 1 is set to be in a range of 100 mm to 400 mm.
  • a method for forming the second metal layer is not limited to the method described above, and may be identical to or different from that of the first metal layer.
  • a second metal powder containing aluminum particles as its main component may be fed to the warm spraying method of which the condition is suitably set, to form the second metal layer.
  • FIG. 4 is microscopic photographs of aluminum particles that are attached onto a surface of an aluminum nitride base material. These samples were prepared by scanning a warm spraying device over the aluminum nitride base material at a high velocity while minimizing the feed rate of the aluminum particles, and thereby spraying a small amount of aluminum particles to the surface of the aluminum nitride base material. While changing the nitrogen flow rate of the warm spraying device in three steps of 1000 SLM, 1500 SLM, and 2000 SLM, the preheating temperature of the aluminum nitride base material for each nitrogen flow rate was changed in three steps of 300K (without preheating, RT), 473K, and 673K. As shown in FIG.
  • SLM is an abbreviation of standard liter/min, and is a unit indicating a gas flow rate (liter) per 1 minute at 1 atm and 0°C.
  • FIG. 5 is a graph in which the ultrasonic irradiation time is plotted on the horizontal axis, whereas the ratio of dropped-out particles on a silicon nitride substrate at three levels of nitrogen flow rates and three levels of preheating temperatures are plotted on the vertical axis.
  • more than 80% of the particles were dropped out by irradiation of 1 minute at a nitrogen flow rate of 2000 SLM. It was observed that the dropout rate decreased as the nitrogen flow rate decreased, that is, the adhesion of the particles was improved.
  • the preheating temperature of the ceramic base material to which the metal powder is sprayed may be from 200°C to 600°C.
  • FIG. 6 is a graph showing the relationship between the velocity and the temperature of aluminum particles that are generated by the warm spraying device 10 for fabrication of metal layers.
  • the graph of FIG. 6 shows such relationship of velocity and temperature for particles with three different diameters, i.e., 10 ⁇ m, 30 ⁇ m, and 50 ⁇ m, which appear as three curves.
  • the relationship between the velocity and the temperature of the aluminum particles at the time point of reaching the surface of the ceramic base material is plotted for different flow rates of the inert gas IG (nitrogen gas) such as 500 SLM, 1000 SLM, 1500 SLM, and 2000 SLM in the warm spraying device 10 in FIG. 6 .
  • the distance between the injection port 15 of the warm spraying device 10 and the base material surface is set to 200 mm, and the velocity and the temperature of the aluminum particles at the time point of reaching the surface of the ceramic base material was calculated by a numerical simulation.
  • FIG. 6 also shows the melting point (660°C, 933K) and the softening temperature (287°C, 560K) of aluminum particles.
  • D 10 is greater than or equal to 10 ⁇ m, and D 90 is less than or equal to 50 ⁇ m for the particle diameter distribution of the metal powder used for the warm spraying device. It is more preferable that D 10 is greater than or equal to 20 ⁇ m, and D 90 is less than or equal to 45 ⁇ m.
  • the board may be a metal composite board containing a combination of ceramic and metals such as copper, aluminum, silver, and the like, or a resin composite board containing a combination of ceramic and a resin such as an engineering plastic resin.
  • a metal layer is formed on the surface of the ceramic base material that is usually provided as the outermost layer.
  • the engineering plastic resin to be combined with the ceramic base material may be polyacetal (POM), polyamide (PA), polycarbonate (PC), modified polyphenylene ether (m-PPE), or polybutylene terephthalate (PBT).
  • the aluminum circuit board as described above is useful as a member configuring various electronic devices.
  • an aluminum nitride base material (Size: 60 mm ⁇ 50 mm ⁇ 0.635 mmt, Three-Point Bending Strength: 500 MPa, Heat Conductivity: 150 W/mK, and Purity: greater than or equal to 95%) and a silicon nitride base material (Size: 60 mm ⁇ 50 mm ⁇ 0.635 mmt, Three-Point Bending Strength: 700 MPa, Heat Conductivity: 70 W/mK, and Purity: greater than or equal to 92%) were used as the ceramic base material.
  • the following film formation test was performed by using a warm spraying device_ having the same configuration as that illustrated in FIG. 3 .
  • the aluminum nitride base material was covered with an iron mask with an opening.
  • Aluminum powder manufactured by Fukuda Metal Foil & Powder Co., Ltd., a water atomized powder, Purity: 99.7%, Particle Diameter: less than or equal to 45 ⁇ m, and Melting Point: 933K
  • a metal layer having a predetermined pattern 56 mm ⁇ 46 mm ⁇ 300 ⁇ mt
  • Nitrogen was used as inert gas for the warm spraying method.
  • a metal layer was also formed on the opposite surface of the aluminum nitride base material.
  • the warm spraying condition was set to realize particle temperatures and particle velocities as shown in Table 1.
  • the particle temperature and the particle velocity are these values of most of the aluminum powder at a time point of reaching the base material (the same applies to Film Formation Test 2).
  • Film formation of a first metal layer using an aluminum-magnesium alloy powder was performed using the warm spraying condition shown in Table 1 in the same manner with Film Formation Test 1.
  • the aluminum-magnesium alloy powder manufactured by Kojundo Chemical Lab. Co., Ltd., a gas atomized powder, Magnesium Content: 3.0 mass%, Amount of Impurities Other than Aluminum and Magnesium: less than or equal to 0.1 mass%, Particle Diameter: less than or equal to 45 ⁇ m, and Melting Point: 913K was used instead of the aluminum powder.
  • Aluminum powder manufactured by Fukuda Metal Foil & Powder Co., Ltd., a water atomized powder, Purity: 99.7%, and Particle Diameter: less than or equal to 45 ⁇ m
  • a second metal layer 56 mm ⁇ 46 mm ⁇ 200 ⁇ mt
  • nitrogen was used as inert gas, and the condition corresponded to Particle Temperature: 500°C and Particle Velocity: 800 m/s.
  • Second metal layer Particle temp. (K) Particle velocity (m/s) Particle type Thick ness ( ⁇ m) Film formation availability Particle Type Thick ness ( ⁇ m) 1 AlN 530 900 Al 300 Unavailable - - 2 AlN 560 400 Al 300 Unavailable - - 3 AlN 560 500 Al 300 Available - - 4 AlN 930 900 Al 300 Available - - 5 AlN 930 1100 Al 300 Unavailable - - 6 AlN 960 500 Al 300 Unavailable - - 7 Si 3 N 4 530 500 Al 300 Unavailable - - 8 Si 3 N 4 560 900 Al 300 Available - - 9 Si 3 N 4 560 1100 Al 300 Unavailable - 10 Si 3 N 4 930 400 Al 300 Unavailable - - 11 Si 3 N 4 930 500 Al 300 Available - 12 Si 3 N 4 960 900 Al 300 Unavailable - 13 AlN 530 900 Al-Mg 150 Unavailable - 14 AlN 560 400 Al
  • test bodies were subjected to a heat cycle test.
  • "at 180°C for 30 minutes, and then, at -45°C for 30 minutes” was set as one cycle, and a test of 1000 cycles was performed.
  • abnormality such as peeling did not occur in the metal layers.
  • the present invention is useful for manufacturing an aluminum circuit board that includes a circuit containing aluminum. Processing conditions such as the amount of metal powder and its heating temperature can be suitably managed to manufacture a circuit board including a resin composite board of ceramic and an engineering plastic resin as well as a metal composite board of ceramic and a metal.
  • the method of the present invention is excellent in mass productivity and general versatility.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Claims (5)

  1. Verfahren zur Herstellung einer Aluminiumleiterplatte, umfassend:
    einen Schritt des Sprühens eines erhitzten Metallpulvers, das Aluminiumpartikel und/oder Aluminiumlegierungspartikel enthält, auf ein Keramikbasismaterial und dadurch Ausbilden einer Metallschicht auf einer Oberfläche des Keramikbasismaterials,
    wobei die Temperatur von mehr als oder gleich 80 Masse% der Gesamtmenge des Metallpulvers zu einem Zeitpunkt des Erreichens der Oberfläche des Keramikbasismaterials höher als oder gleich der Erweichungstemperatur des Metallpulvers und niedriger als oder gleich dem Schmelzpunkt des Metallpulvers ist, und die Erweichungstemperatur eine Temperatur ist, die als Wert des Schmelzpunktes x 0,6 auf der Absoluttemperaturskala definiert ist,
    wobei
    die Geschwindigkeit von mindestens einem Teil des Metallpulvers zum Zeitpunkt des Erreichens der Oberfläche des Keramikbasismaterials größer als oder gleich 450 m/s und kleiner als oder gleich 1000 m/s ist, und
    in der Partikeldurchmesserverteilung des Metallpulvers der Partikeldurchmesser D10 größer als oder gleich 10 µm ist, welcher der Durchmesser ist, bei dem 10 % der Masse der Probe von Partikel mit einem kleineren Durchmesser als dieser Wert gebildet werden, und der Partikeldurchmesser D90 kleiner oder gleich 50 µm ist, welcher der Durchmesser ist, bei dem 90 % der Masse der Probe von Partikel mit einem kleineren Durchmesser als dieser Wert gebildet werden,
    die Aluminiumlegierungspartikel Partikel sind, die aus Aluminium; Magnesium mit weniger als oder gleich 7,5 Masse% auf der Basis der Masse der Aluminiumlegierungspartikel; und restlichen unvermeidlichen Verunreinigungen bestehen, und wobei
    das Metallpulver mit einer warmen Sprühvorrichtung (10) gesprüht wird, die einen rohrförmigen Körper (20) umfasst, der eine Auslassdüse (13) und einen Trommelabschnitt (14) aufweist, wobei die Auslassdüse (13) eine sich erweiternde Düse aufweist, der Trommelabschnitt (14) eine gerade zylindrische Trommel ist, die durchgehend mit der Auslassdüse (13) verbunden ist, und das Metallpulver von einem Pulverzufuhranschluss (27), der zwischen der Auslassdüse (13) und dem Trommelabschnitt (14) vorgesehen ist, dem Einlass des Trommelabschnitts (14) zugeführt wird.
  2. Herstellungsverfahren nach Anspruch 1,
    wobei die Geschwindigkeit des Metallpulvers zum Zeitpunkt des Erreichens der Oberfläche des Keramikbasismaterials größer als oder gleich 750 m/s und kleiner als oder gleich 900 m/s ist.
  3. Herstellungsverfahren nach Anspruch 1 oder 2,
    wobei in der Partikeldurchmesserverteilung des Metallpulvers der Partikeldurchmesser D10 größer oder gleich 20 µm ist und der Partikeldurchmesser D90 kleiner oder gleich 45 µm ist.
  4. Herstellungsverfahren nach einem der Ansprüche 1 bis 3,
    wobei das Metallpulver Aluminiumlegierungspartikel enthält und
    das Herstellungsverfahren ferner Folgendes umfasst:
    einen Schritt des Sprühens eines erhitzten zweiten Metallpulvers, das Aluminiumpartikel enthält, auf eine Oberfläche der ersten Metallschicht, welche die Metallschicht ist, die auf der Oberfläche des Keramikbasismaterials ausgebildet ist, und dadurch Ausbilden einer zweiten Metallschicht auf der Oberfläche der ersten Metallschicht.
  5. Verfahren zur Herstellung der Aluminiumleiterplatte nach Anspruch 4,
    wobei eine Dicke der ersten Metallschicht kleiner als oder gleich 150 µm ist.
EP18758454.5A 2017-02-24 2018-02-22 Verfahren zur herstellung einer aluminiumleiterplatte Active EP3587621B1 (de)

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JPWO2018155564A1 (ja) 2019-12-12
CN110382738B (zh) 2022-04-08
EP3587621A4 (de) 2020-01-22
CN110382738A (zh) 2019-10-25
US11570901B2 (en) 2023-01-31
US20200120809A1 (en) 2020-04-16
WO2018155564A1 (ja) 2018-08-30

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