EP3574127A1 - Anneau de transport - Google Patents

Anneau de transport

Info

Publication number
EP3574127A1
EP3574127A1 EP18702640.6A EP18702640A EP3574127A1 EP 3574127 A1 EP3574127 A1 EP 3574127A1 EP 18702640 A EP18702640 A EP 18702640A EP 3574127 A1 EP3574127 A1 EP 3574127A1
Authority
EP
European Patent Office
Prior art keywords
section
substrate
thermal conductivity
heat
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18702640.6A
Other languages
German (de)
English (en)
Inventor
Wilhelm Josef Thomas KRÜCKEN
Martin Eickelkamp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102017101648.1A external-priority patent/DE102017101648A1/de
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP3574127A1 publication Critical patent/EP3574127A1/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

Definitions

  • the invention relates to a device for transporting a substrate in the form of an annular body which at least partially surrounds an annular opening, with a first section projecting radially outward relative to the ring opening and with a second section projecting radially inwards, wherein the sections are first and second, respectively have second specific heat transport properties, which determine an axial heat transfer through the sections in a relative to a surface normal to the surface of the ring opening axial temperature difference.
  • PRIOR ART WO 2012/096466 A2 discloses a CVD reactor in which a multiplicity of substrate holders are arranged on a susceptor rotatably arranged in a process chamber.
  • the substrate holders are in a temperature-transmitting planar system on the upwardly facing broad side of a susceptor heated from below.
  • a substrate On the upward-facing broad side of the substrate holder is a substrate, in particular a semiconductor substrate, which is coated by means of a process gas fed into the process chamber arranged above the susceptor.
  • a gripper In order to automatically place the substrates on the substrate holder tops and remove them again, a gripper is provided which has two gripping arms which engage under the edge of a transport ring, which rests on an annular step of the substrate holder and with a radially inwardly facing portion of the outer Edge of the substrate engages below. A radially outwardly pointing portion of the transport ring projects beyond the side edge defining side surface the substrate holder, so that the outwardly facing portion of the transport ring of the two gripping arms of the gripper can be awakegrif f en.
  • the coating process takes place in a process chamber whose upper wall is cooled, so that between the heated susceptor and the process chamber ceiling forms a steep temperature gradient.
  • the temperature gradient results in a heat flow from the susceptor to the process chamber ceiling, wherein the heat flow due to the high susceptor temperature of more than 500 degrees Celsius, in some processes more than 1000 degrees Celsius, by heat radiation and on the substrate holder and the substrate thereon also via heat conduction takes place.
  • the invention has the object of developing the transport ring such that the deposited on the substrate layer gets a higher lateral homogeneity.
  • the stoichiometric composition of the layer deposited on the substrate, its layer thickness or its doping has an inhomogeneity at least in the edge region.
  • the transport ring on the one hand, the requirement is made to have a high thermal conductivity in the region which supports the edge of the substrate so that heat provided by the susceptor flows through the substrate holder and the transport ring into the edge of the substrate around the edge of the substrate to heat to the same temperature to which the central region of the substrate is heated.
  • the heat loss from the edge of the substrate carrying portion of the transport ring towards the portion of the transport ring, which is required for resting on the gripper to be minimal.
  • the sections of the body should have different heat transport properties.
  • an imaginary axis extends in the direction of the surface normal of the surface of the ring opening which is at least partially enclosed by the body.
  • the first section which serves to be engaged by the gripping arms of the gripper, is according to the invention a radially outwardly raging section.
  • the second section which in particular forms a reduced-thickness step on which the edge of the substrate rests, is according to the invention a radially inwardly projecting section.
  • the heat transport through the body takes place in the axial direction, namely from a downward-pointing broad side of the body in the direction of an upward to the process chamber ceiling. send broadside of the body.
  • the heat transport properties may in particular be the specific heat conductivity of the sections or the emissivities of the surfaces of the sections. According to the invention, at least one of the heat transport properties is so different in the first section and in the second section that the heat flowing in the axial direction through a unitary surface element is smaller in the first section than in the second section.
  • the first radially outwardly disposed portion thus has a greater heat flow resistance than the second portion which supports the edge of the substrate in contacting abutment.
  • the emissivity of the surface of the first section may be smaller than the emissivity of the second section.
  • the transport ring forming body may be a ring.
  • the annular body may form a closed or an open ring.
  • the first section may immediately adjoin the second section.
  • the boundary between the first section and the second section may extend in the region of the annular step of the substrate holder, on which the annular body rests. However, the boundary can also lie directly above the edge, ie the side surface of the substrate holder. However, the boundary may also lie in a region of the annular body which projects beyond the edge of the substrate holder in the radial outward direction.
  • the first section does not directly adjoin the second section, but rather that an intermediate section extends between the first section and the second section.
  • This third section may have the same heat transfer properties, ie in particular the same heat flow resistance, which the second section, that is to say the section on which the substrate rests with its edge.
  • the boundary between the first portion and the third portion may be on the ring stage of the substrate holder. It can be on the edge of the ring step or radially outside the ring step.
  • the first section preferably projects completely beyond the substrate holder in the radially outward direction. He thus protrudes freely over a side surface of the substrate holder, so that it is radiation-heated from the surface of the susceptor.
  • the inventive design of the transport ring has the consequence that the escape of energy in the form of heat from the annular body over the prior art is reduced. The above-described cooling effect is thereby reduced with the result that the edge temperature of the substrate deviates less strongly from the central temperature of the substrate.
  • the reduced thermal conductivity causes less heat from the second portion, which is heated via contact with the substrate holder, to flow to the first region where the heat is dissipated substantially by radiation or by conduction through the gas in the process chamber. It is provided in particular that the upward-facing broadside surface of the first section has a low emissivity, which also has the consequence that the energy output in the direction of the cooled process chamber ceiling is reduced by radiation.
  • the annular body which is a means to handle the substrate with a gripper, is preferably made up of a plurality of components, wherein the components have different thermal conductivities or their surfaces have different emissivities.
  • the first portion is formed by a ring element or it is formed by a plurality of ring elements, which have a low specific thermal conductivity.
  • the radially outer portion thus has one or more ring elements made of quartz, zirconium oxide or another material, so that it has a lower specific thermal conductivity compared to the material of the radially inwardly projecting portion.
  • the radially inwardly projecting portion may form a main body having a high specific thermal conductivity.
  • This basic body may consist of graphite, silicon carbide or another good heat-conducting material.
  • the different emissivities can not only define the material selection. It is also possible to coat the surfaces of the sections differently. It is also provided that, in particular, the first section has a reflection element.
  • the reflection element can be a tallstMap, which is encapsulated to the outside, wherein the encapsulation can be carried out by a transparent material.
  • the first section may consist of one or more ring elements of a transparent material and / or with low thermal conductivity.
  • the ring elements encapsulate a reflective layer, which may be a metal layer.
  • the emissivity of the surface of the first section may be less than 0.3.
  • the emissivity of the surface of the second section and / or the third section is greater than 0.3. Relevant here is the surface facing the process chamber ceiling.
  • the specific thermal conductivities can differ by a factor of ten.
  • the specific thermal conductivity of the second section is preferably at least 10 times as great as the specific thermal conductivity of the first section.
  • a main body made of a good heat-conducting material, for example graphite or zirconium oxide, extends over the entire radial width of the annular body.
  • the main body thus forms the second section.
  • the main body forms a support portion of the first portion, on which an annular element with low thermal conductivity and / or a high reflectivity is arranged.
  • the first section and the third section together form a surface facing the process chamber ceiling.
  • the first section also forms a surface facing the process chamber ceiling, wherein the surface of the first section is preferably at least twice as large as the surface of the third section.
  • the boundary between the third section and the second section may lie in the region of a boundary surface of the support zone, on which the edge of the substrate rests.
  • the third section thus preferably has a greater thickness measured in the axial direction than the second section, wherein the first section preferably has the same axial thickness as the third section.
  • the first and third sections differ in their heat flow resistance.
  • the annular body consists of a plurality of annular components, preferably only are arranged one above the other in the radially outer region. These components may have different thermal conductivities.
  • the annular body consists of a plurality of annular elements, wherein a gap is provided between the annular elements.
  • the gap height is defined by spacer elements.
  • the ring elements are also provided here preferably only in the radially outer region.
  • the spacer elements may be projections which protrude from a broad side surface of a ring element.
  • the projections can also protrude from a broad side surface of the base body, so that a ring element is supported on the projections.
  • the projections are preferably hemispherical elevations.
  • the projections may be formed of the same material of the main body or the ring member.
  • FIG. 1 is a schematic plan view of a susceptor arrangement in a CVD reactor
  • FIG. 3 shows a representation according to FIG. 2 of a second exemplary embodiment
  • FIG. 4 shows a representation according to FIG. 3 of a third exemplary embodiment
  • Fig. 5 shows a fourth embodiment of the invention according to Figure 3 and
  • Fig. 6 shows a fifth embodiment according to Figure 4. Description of the embodiments
  • the invention relates to a device for depositing crystalline or non-crystalline layers, in particular semiconductor layers on a substrate 11, which rests with its underside on a support surface 13 of a substrate holder 12.
  • the lower broad side surface 14 of the circular disk-shaped substrate holder 12 is in contact bearing on an upwardly facing surface 17 of a susceptor 16, which with not shown
  • Heating elements is heated from below.
  • the substrate 11 is a process chamber into which process gases are fed by means of a gas inlet element, not shown, which decompose pyrolytically either in the process chamber or on the surface of the heated substrate 11.
  • the decomposition products react with each other and form a particular crystalline layer, which may consist of two, three or more components.
  • the process chamber is limited by a process chamber ceiling 19, which is cooled by cooling elements, not shown.
  • the susceptor temperature Ts is between 500 degrees and 1000 degrees Celsius.
  • the temperature Tc of the process chamber ceiling 19 is in a range between 100 degrees and 300 degrees Celsius.
  • a vertical temperature gradient is formed between the upper side 17 of the susceptor 16 and the process chamber ceiling 19, with the result that that heat from the susceptor 16 to the process chamber ceiling 19 flows.
  • This is done on the one hand by thermal radiation but also by heat conduction through the substrate holder 12, which consists of good thermally conductive material, such as graphite.
  • FIG. 1 shows the plan view of a bottom of a process chamber. On one, not visible in the figure 1, heated from below susceptor 16 are several, also not visible, substrate holder 12 having a circular disk shape.
  • ring stage 15 which forms a support surface, each rests an annular body 1, which forms a transport ring.
  • the individual substrate holders 12 are surrounded by intermediate pieces 21, 22, which fill the area between the individual substrate holders 12 and which are made of a good heat conductive material, such as graphite.
  • each substrate holder 12 and transport ring 1 are two essentially borrowed radially and parallel to each other channels 23 provided in the intermediate pieces 22, reach through the arms of a gripper, not shown below a lower broad side surface of a first portion 2 of the annular body 1 can to raise the annular body 1.
  • a gripper not shown below a lower broad side surface of a first portion 2 of the annular body 1 can to raise the annular body 1.
  • On a radially inwardly projecting second portion 3 of the annular body 1 rests the edge of the substrate 11, so that by lifting the annular body 1, the substrate 11 can be removed from the substrate holder 12.
  • the radially outer section 2 shows a first embodiment of a transport ring 1, which has a first portion 2, which is based on a pulled through the opening surface of the transport ring 1 axis a radially outer portion 2.
  • the radially outer section 2 has an upper broad side surface 4 facing the process chamber ceiling 19 and a lower broad side facing the susceptor 16.
  • the heat Qi flows through the first section 2 in the axial direction and is emitted essentially by heat radiation from the upper broad side surface 4 in the direction of the process chamber ceiling 19.
  • a radially inwardly projecting second section 3 has a smaller axial thickness than the first section 2.
  • the second section 3 has a downwardly facing broad side surface 7, with which the second section 3 on an upwardly facing annular step 15 of the substrate holder 12th rests.
  • the substrate 11 is heated by heat conduction through the substrate holder 12 and by heat conduction through the support surface 13 to a process temperature.
  • the edge of the substrate 11 is heated by the heat flow Q 2 through the second section 3, namely by a heat flow from the broad side surface 7 to the support surface 5.
  • the heat transfer from the susceptor 16 to the first section 2 is less than the heat transfer from the susceptor 16 to the second section 3, so that there is a tendency that heat flows from the second portion 3 to the first portion 2, which is radiated by heat radiation from the broad side surface 4 to the process chamber ceiling 19.
  • the thermal conductivity of the second section 3 is greater than the thermal conductivity of the first section 2.
  • the second section 3 can border directly on the first section 2.
  • a third section 8 is provided between the first portion 2 and the second portion 3.
  • the third section 8 has an upwardly facing broad side surface 9, which terminates flush with the broad side surface 4.
  • a downward-facing broad side surface 10 of the third section 8 terminates flush with the broad side surface 6 of the first section 2.
  • the second portion 3 is adjacent to the third portion 8 in the region of a vertical boundary surface 20, which bounds the thickness-reduced portion of the second portion 3.
  • the boundary surface 20 forms a step.
  • the material properties of the second section 3 are substantially the same as the material properties of the third section 8.
  • the material properties of the first section 2 differ from the material properties of the second section 3 in that the heat flow resistance of the first section 2 increases with them It is provided in particular that the thermal conductivity of the second section 3 and possibly of the third section 8 is greater than the thermal conductivity of the first section 2.
  • the first section 2 and the second section 3 or the third section 8 can be made of different materials.
  • the annular body 1 may be composed of several parts. The parts can be connected to each other positively or non-positively. The parts can also be sintered together. It can also be a multi-component body.
  • the broad side surfaces 4, 9 and 5, pointing upwards, and the broad side surfaces 6, 10 and 7 pointing downwards have an emission capacity for infrared radiation and a reflectivity for infrared radiation.
  • the emissivity of the first section 2 associated surfaces 4, 6, but at least the upwardly facing broadside surface 4 is less than the emissivity of the second section 3 associated broad side surfaces 4, 7 and the third section 8 associated broad side surfaces 9, 10, wherein at least the emissivity of the upwardly facing broadside surface 5 is greater than the emissivity of the upwardly facing broadside surface 4.
  • the broadside surfaces 4, 6 have a higher reflectivity than the broadside surfaces 5 and 7, 9 and 10, respectively sufficient if only one of the heat transfer properties thermal conductivity, emissivity or reflectivity is different.
  • FIG. 3 shows a second embodiment of the invention, in which the annular body 1 forms a base body 24, the material-uniform forms the second portion, the third portion and a lower portion of the first portion.
  • the second portion 3 differs from the third portion 8 essentially in that the axial thickness of the third portion is greater than the axial thickness of the second portion 3, so that the support surface 5 is adjacent to a vertical step 20, which in the upper broad side surface. 9 of the third section 8.
  • the lower broad side surfaces 7, 6 go flush with each other.
  • two ring elements 25, 26 are arranged from a transparent material.
  • the ring elements 25, 26 may be made of quartz. They have a lower thermal conductivity than the material of the base body 24, which may be graphite. Between the two ring elements 25, 26, a reflection body is arranged. It may be a metal film which is encapsulated between the two ring elements 25, 26.
  • the metal film 27 gives the first section 2 or the broad side surface 4 of the first section 2 facing the process chamber ceiling a higher reflectivity and thus a lower emissivity than the upwardly facing broad side surfaces 9 or 5 of the second section 3 and the third section 8, respectively ,
  • the base body 24 forms a pointing to the radially outer edge of the transport ring 1 extension, which forms as well as the extension of the embodiment shown in Figure 3 an upwardly facing support surface, the height the contact surface 5 extends and is separated from the contact surface 5 by an annular web of the third section 8.
  • a ring element 25 made of a material with a low thermal conductivity.
  • the surfaces and in particular the facing the cooled process chamber surfaces of the transport ring 1 have different emissivities.
  • the radially outward Wide side surfaces have a low emissivity and consequently a high reflectivity.
  • the radially inner broad side surfaces have a low reflectivity and high emissivity.
  • the emissivity of the surfaces or surface coatings should not be altered by chemical reactions or parasitic depositions. This is achieved by using ring elements made of a transparent material with a low profile
  • Thermal conductivity such as quartz glass exist.
  • a reflective, in particular metallic, layer is encapsulated, which is surrounded on all sides by a transparent material protecting it.
  • the reflectivity should be greater than 60 percent.
  • annular web is arranged between a ring element of low-thermal-conductivity material and the bearing surface 5, which has a high thermal conductivity, that is to say a low specific heat flow resistance. This ensures that the temperature in the edge region of the substrate is increased and the substrate is also heated laterally from this rib.
  • the third section 8 forming rib is heated via heat conduction via the annular step 15.
  • the surface of the first portion 2 should be at least as large as the surface of the third portion 8, wherein the radial width of the annular ridge forming the third portion 8 should be at least 0.5 mm.
  • the substrate holder 12 is shown as lying substantially on the susceptor 16. However, the substrate holder 12 can also hedge in a pocket of the susceptor 16. It is also possible that the substrate holder 12 is rotatably associated with the susceptor 16. For example, 12 gas outlet channels below the broad side surface 14 of the substrate holder open, through which a purge gas is introduced into the gap between substrate holder 12 and susceptor 16, which forms a gas cushion on which the substrate holder 12 rests. By a suitable flow direction of the purge gas, the substrate holder 12 can be rotated.
  • FIG. 5 shows an embodiment similar to that shown in FIG.
  • the base body 24 forms a radially outer bearing surface, which is essentially a horizontal surface.
  • the ring element 25 may consist of the same material from which the base body 24 is made.
  • a second ring member 26 is supported on the first ring member 25, a second ring member 26 is supported.
  • the ring element 26 may consist of the same material consists of the base body 24.
  • a gap 29 extends between the base body 24 and the first ring element 25 directly resting thereon.
  • the gap height of the gap 29 is defined by spacer elements 28.
  • the spacer elements 28 are individual elevations that originate from one of the two broad side surfaces, between which the gap 29 extends.
  • the spacer elements 28 are individual, hemispherical elevations of the first ring element 25, on which the second ring element 26 rests.
  • the gap 29 acts as a heat flow isolation gap.
  • additional spacer elements may be provided to form a second gap between the first ring member 25 and the second ring member 26.
  • the illustrated in the figure 6 fifth embodiment corresponds substantially to the third embodiment shown in Figure 4.
  • a ring member 25 from which may consist of the same material, from which also the base body 24 consists.
  • the materials of base body 24 and ring member 25 may also be different from each other.
  • Essential is a gap 29 between a lower broad side surface of the annular element 25 and an upper broad side surface of the base body 24.
  • the gap height of the gap 29 is defined by spacer elements 28.
  • the spacer elements 28 are formed by the ring element 25. It is a knob-like elevations of the downward-facing broadside surface.
  • the nubs can also have a hemispherical shape here.
  • a device characterized in that at least one heat transfer property of the first portion 2 is different from the heat transfer property of the second portion 3 such that the heat flowing through a unitary surface member in the axial direction is small in the first portion 2 than in the second portion 3 ,
  • a device characterized in that the heat transfer property is the specific thermal conductivity of the section, wherein the specific thermal conductivity of the first portion 2 is smaller than that of the second portion 3.
  • a device which is characterized by a third section 8 arranged between the first section 2 and the second section 3, the heat transfer properties of which substantially correspond to those of the second section 3.
  • a device which is characterized in that the second portion 3 and optionally the third portion 8 rests on an annular step 15 of a substrate holder 12.
  • a device which is characterized in that the substrate holder 12 is supported by a susceptor 16 heated from below and the first portion 2 protrudes freely over a side surface 18 of the substrate holder 12.
  • a device characterized in that the annular body 1 consists of a plurality of interconnected elements 24, 25, 26, which have different specific heat transfer properties from each other and / or by means of spacer element (28) are spaced from each other.
  • a device which is characterized in that one or more ring elements 24, 25 associated with the first section 2 consist of a transparent material with low thermal conductivity, in which a reflective layer 27, in particular metal layer, is encapsulated.
  • a device which is characterized in that the specific thermal conductivity of the second portion 3 is at least ten times as large as the specific thermal conductivity of the first portion 2 and / or that the emissivity of the surface 4 of the first portion 2 is less than 0.3 and the emissivity of the surface 5, 9 of the second portion 3 and / or the third portion 8 is greater than 0.3.
  • a device which is characterized in that the annular body 1 is formed by a base body 24 extending over the first portion 2 and the second portion 3, wherein the first portion 2 comprises at least one ring element 25, 26 with the base body 24 different heat transport properties.
  • a device which is characterized in that the first portion 2 and the third portion 8 each have a pointing to a process chamber ceiling 19 surface 4, 9, wherein the surface 4 of the first portion 2 is at least twice as large as the surface 9 of the third section 8.
  • a device which is characterized in that a process chamber ceiling 19 facing surface 5 of the second portion 3 forms a support zone for supporting the edge of the substrate 11, wherein the support zone is surrounded by a boundary surface 20 of the third section 8, the same how the second section 3 rests with a surface 10, 7 facing the susceptor 16 on the annular step 15 of the substrate holder 12.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un dispositif pour le transport d'un substrat sous forme d'un corps annulaire (1) entourant au moins partiellement une ouverture circulaire, présentant une première section (2) s'étendant radialement vers l'extérieur par rapport à l'ouverture circulaire et une deuxième section (3) s'étendant radialement vers l'intérieur, les sections (2, 3) présentant chacune des propriétés de transport de chaleur qui déterminent un transport de chaleur axial à travers les segments lors d'une différence de température axiale par rapport à une normale à la surface de l'ouverture circulaire. Au moins une des propriétés de transport de chaleur de la première section (2) est différente de la propriété de transport de chaleur de la deuxième section (3) de manière telle que la chaleur qui s'écoule dans la direction axiale à travers un élément surfacique unitaire dans la première section (2) est inférieure à celle dans la deuxième section (3), la propriété de transport de chaleur étant la conductibilité thermique spécifique ou l'émissivité d'au moins une surface orientée dans la direction axiale des sections (2, 3).
EP18702640.6A 2017-01-27 2018-01-25 Anneau de transport Pending EP3574127A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017101648.1A DE102017101648A1 (de) 2017-01-27 2017-01-27 Transportring
DE102017115416 2017-07-10
PCT/EP2018/051827 WO2018138197A1 (fr) 2017-01-27 2018-01-25 Anneau de transport

Publications (1)

Publication Number Publication Date
EP3574127A1 true EP3574127A1 (fr) 2019-12-04

Family

ID=61148198

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18702640.6A Pending EP3574127A1 (fr) 2017-01-27 2018-01-25 Anneau de transport

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TW201840898A (zh) 2018-11-16
KR20190111999A (ko) 2019-10-02
CN110536976A (zh) 2019-12-03
JP2020506290A (ja) 2020-02-27
TWI749159B (zh) 2021-12-11
JP7107949B2 (ja) 2022-07-27
US20190390336A1 (en) 2019-12-26
KR102538550B1 (ko) 2023-05-30
CN110536976B (zh) 2022-03-15
WO2018138197A1 (fr) 2018-08-02

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