EP3559752A4 - Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées - Google Patents

Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées Download PDF

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Publication number
EP3559752A4
EP3559752A4 EP17884025.2A EP17884025A EP3559752A4 EP 3559752 A4 EP3559752 A4 EP 3559752A4 EP 17884025 A EP17884025 A EP 17884025A EP 3559752 A4 EP3559752 A4 EP 3559752A4
Authority
EP
European Patent Office
Prior art keywords
charged particle
lithography system
particle multi
beamlet lithography
unique chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17884025.2A
Other languages
German (de)
English (en)
Other versions
EP3559752A1 (fr
Inventor
Marcel Nicolaas Jacobus Van Kervinck
Vincent Sylvester Kuiper
Marco Jan-Jaco Wieland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/389,593 external-priority patent/US10418324B2/en
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of EP3559752A1 publication Critical patent/EP3559752A1/fr
Publication of EP3559752A4 publication Critical patent/EP3559752A4/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
EP17884025.2A 2016-12-23 2017-12-22 Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées Pending EP3559752A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/389,593 US10418324B2 (en) 2016-10-27 2016-12-23 Fabricating unique chips using a charged particle multi-beamlet lithography system
US201762458082P 2017-02-13 2017-02-13
PCT/JP2017/047416 WO2018117275A1 (fr) 2016-12-23 2017-12-22 Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées

Publications (2)

Publication Number Publication Date
EP3559752A1 EP3559752A1 (fr) 2019-10-30
EP3559752A4 true EP3559752A4 (fr) 2020-08-19

Family

ID=62626667

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17884025.2A Pending EP3559752A4 (fr) 2016-12-23 2017-12-22 Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées

Country Status (4)

Country Link
EP (1) EP3559752A4 (fr)
KR (1) KR102359084B1 (fr)
CN (2) CN114355733B (fr)
WO (1) WO2018117275A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113255263B (zh) * 2021-06-07 2021-10-01 上海国微思尔芯技术股份有限公司 颗粒带分割方法、装置、计算机设备和存储介质

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JPS58116732A (ja) * 1981-12-29 1983-07-12 Fujitsu Ltd 荷電ビ−ム露光方法および装置
US20020160311A1 (en) * 2001-04-23 2002-10-31 Canon Kabushiki Kaisha Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus
US20030141462A1 (en) * 2002-01-30 2003-07-31 International Business Machines Corporation Multi-beam shaped beam lithography system
US20060064191A1 (en) * 2003-02-20 2006-03-23 Hidemitsu Naya Semiconductor device and semiconductor production management system
US20150026650A1 (en) * 2013-07-17 2015-01-22 Arm Limited Integrated circuit manufacture using direct write lithography

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SE522531C2 (sv) * 1999-11-24 2004-02-17 Micronic Laser Systems Ab Metod och anordning för märkning av halvledare
JP3886695B2 (ja) * 2000-03-28 2007-02-28 株式会社東芝 露光パターンデータ生成方法、露光パターンデータ生成装置、半導体装置の製造方法、及びフォトマスクの製造方法
JP2001337439A (ja) * 2000-05-26 2001-12-07 Hitachi Ltd 半導体集積回路の設計、製造方法および検査方法並びに半導体集積回路
JP3983990B2 (ja) * 2000-06-13 2007-09-26 株式会社東芝 回路パターンの設計方法と荷電粒子ビーム露光方法及び記録媒体
JP2002055431A (ja) * 2000-08-08 2002-02-20 Hitachi Ltd マスクデータパターン生成方法
US6355494B1 (en) * 2000-10-30 2002-03-12 Intel Corporation Method and apparatus for controlling material removal from a semiconductor substrate using induced current endpointing
KR101016728B1 (ko) * 2002-10-30 2011-02-25 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
CN101103417B (zh) * 2003-09-05 2012-06-27 卡尔蔡司Smt有限责任公司 粒子光学系统和排布结构,以及用于其的粒子光学组件
US7609362B2 (en) * 2004-11-08 2009-10-27 Asml Netherlands B.V. Scanning lithographic apparatus and device manufacturing method
JP2006139165A (ja) * 2004-11-15 2006-06-01 Seiko Epson Corp セルを記録した記録媒体及び半導体集積回路
JP4973224B2 (ja) * 2006-07-19 2012-07-11 富士通セミコンダクター株式会社 電子回路装置設計方法、電子ビーム露光データ作成方法、及び、電子ビーム露光方法
JP4256408B2 (ja) * 2006-07-20 2009-04-22 株式会社東芝 不良確率の算出方法、パターン作成方法及び半導体装置の製造方法
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EP2494578B1 (fr) 2009-10-26 2016-06-15 Mapper Lithography IP B.V. Système de lithographie à multiples petits faisceaux de particules chargées, avec dispositif de modulation
US8539395B2 (en) * 2010-03-05 2013-09-17 Micronic Laser Systems Ab Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image
NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
RU2576018C2 (ru) * 2010-11-13 2016-02-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ определения расстояния между двумя составляющими лучами в устройстве экспонирования с множеством составляющих лучей
NL2019502B1 (en) * 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116732A (ja) * 1981-12-29 1983-07-12 Fujitsu Ltd 荷電ビ−ム露光方法および装置
US20020160311A1 (en) * 2001-04-23 2002-10-31 Canon Kabushiki Kaisha Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus
US20030141462A1 (en) * 2002-01-30 2003-07-31 International Business Machines Corporation Multi-beam shaped beam lithography system
US20060064191A1 (en) * 2003-02-20 2006-03-23 Hidemitsu Naya Semiconductor device and semiconductor production management system
US20150026650A1 (en) * 2013-07-17 2015-01-22 Arm Limited Integrated circuit manufacture using direct write lithography

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PARKER N W ET AL: "A high throughput electron-beam direct-write lithography system", MICROLITHOGRAPHY WORLD, PENNWELL CORPORATION, US, vol. 9, no. 3, 1 January 2000 (2000-01-01), pages 22, 24 - 25, 30, XP009195346, ISSN: 1074-407X *
See also references of WO2018117275A1 *

Also Published As

Publication number Publication date
CN110268330B (zh) 2022-01-28
WO2018117275A1 (fr) 2018-06-28
CN114355733B (zh) 2024-03-15
KR102359084B1 (ko) 2022-02-07
CN114355733A (zh) 2022-04-15
CN110268330A (zh) 2019-09-20
KR20190098222A (ko) 2019-08-21
EP3559752A1 (fr) 2019-10-30

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Inventor name: WIELAND, MARCO JAN-JACO

Inventor name: VAN KERVINCK, MARCEL NICOLAAS JACOBUS

Inventor name: KUIPER, VINCENT SYLVESTER

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