EP3559752A4 - Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées - Google Patents
Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées Download PDFInfo
- Publication number
- EP3559752A4 EP3559752A4 EP17884025.2A EP17884025A EP3559752A4 EP 3559752 A4 EP3559752 A4 EP 3559752A4 EP 17884025 A EP17884025 A EP 17884025A EP 3559752 A4 EP3559752 A4 EP 3559752A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- charged particle
- lithography system
- particle multi
- beamlet lithography
- unique chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31762—Computer and memory organisation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/389,593 US10418324B2 (en) | 2016-10-27 | 2016-12-23 | Fabricating unique chips using a charged particle multi-beamlet lithography system |
US201762458082P | 2017-02-13 | 2017-02-13 | |
PCT/JP2017/047416 WO2018117275A1 (fr) | 2016-12-23 | 2017-12-22 | Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3559752A1 EP3559752A1 (fr) | 2019-10-30 |
EP3559752A4 true EP3559752A4 (fr) | 2020-08-19 |
Family
ID=62626667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17884025.2A Pending EP3559752A4 (fr) | 2016-12-23 | 2017-12-22 | Fabrication de puces uniques à l'aide d'un système de lithographie à petits faisceaux multiples de particules chargées |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3559752A4 (fr) |
KR (1) | KR102359084B1 (fr) |
CN (2) | CN114355733B (fr) |
WO (1) | WO2018117275A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113255263B (zh) * | 2021-06-07 | 2021-10-01 | 上海国微思尔芯技术股份有限公司 | 颗粒带分割方法、装置、计算机设备和存储介质 |
CN117850167A (zh) * | 2023-11-28 | 2024-04-09 | 上海集成电路材料研究院有限公司 | 电子束直写器以及电子束直写系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116732A (ja) * | 1981-12-29 | 1983-07-12 | Fujitsu Ltd | 荷電ビ−ム露光方法および装置 |
US20020160311A1 (en) * | 2001-04-23 | 2002-10-31 | Canon Kabushiki Kaisha | Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus |
US20030141462A1 (en) * | 2002-01-30 | 2003-07-31 | International Business Machines Corporation | Multi-beam shaped beam lithography system |
US20060064191A1 (en) * | 2003-02-20 | 2006-03-23 | Hidemitsu Naya | Semiconductor device and semiconductor production management system |
US20150026650A1 (en) * | 2013-07-17 | 2015-01-22 | Arm Limited | Integrated circuit manufacture using direct write lithography |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE522531C2 (sv) * | 1999-11-24 | 2004-02-17 | Micronic Laser Systems Ab | Metod och anordning för märkning av halvledare |
JP3886695B2 (ja) * | 2000-03-28 | 2007-02-28 | 株式会社東芝 | 露光パターンデータ生成方法、露光パターンデータ生成装置、半導体装置の製造方法、及びフォトマスクの製造方法 |
JP2001337439A (ja) * | 2000-05-26 | 2001-12-07 | Hitachi Ltd | 半導体集積回路の設計、製造方法および検査方法並びに半導体集積回路 |
JP3983990B2 (ja) * | 2000-06-13 | 2007-09-26 | 株式会社東芝 | 回路パターンの設計方法と荷電粒子ビーム露光方法及び記録媒体 |
JP2002055431A (ja) * | 2000-08-08 | 2002-02-20 | Hitachi Ltd | マスクデータパターン生成方法 |
US6355494B1 (en) * | 2000-10-30 | 2002-03-12 | Intel Corporation | Method and apparatus for controlling material removal from a semiconductor substrate using induced current endpointing |
CN101414128B (zh) * | 2002-10-30 | 2012-04-04 | 迈普尔平版印刷Ip有限公司 | 电子束曝光系统 |
EP2579273B8 (fr) * | 2003-09-05 | 2019-05-22 | Carl Zeiss Microscopy GmbH | Systemes et dispositifs d'optique particulaire et composants d'optique particulaire pour de tels systemes et dispositifs |
US7609362B2 (en) * | 2004-11-08 | 2009-10-27 | Asml Netherlands B.V. | Scanning lithographic apparatus and device manufacturing method |
JP2006139165A (ja) * | 2004-11-15 | 2006-06-01 | Seiko Epson Corp | セルを記録した記録媒体及び半導体集積回路 |
JP4973224B2 (ja) * | 2006-07-19 | 2012-07-11 | 富士通セミコンダクター株式会社 | 電子回路装置設計方法、電子ビーム露光データ作成方法、及び、電子ビーム露光方法 |
JP4256408B2 (ja) * | 2006-07-20 | 2009-04-22 | 株式会社東芝 | 不良確率の算出方法、パターン作成方法及び半導体装置の製造方法 |
US8178818B2 (en) * | 2008-03-31 | 2012-05-15 | Electro Scientific Industries, Inc. | Photonic milling using dynamic beam arrays |
WO2009127659A2 (fr) * | 2008-04-15 | 2009-10-22 | Mapper Lithography Ip B.V. | Eliminateur de faisceaux |
CN102460631B (zh) * | 2009-05-20 | 2015-03-25 | 迈普尔平版印刷Ip有限公司 | 两次扫描 |
EP2494579B1 (fr) | 2009-10-26 | 2017-08-02 | Mapper Lithography IP B.V. | Système de lithographie à multiples petits faisceaux de particules chargées, dispositif de modulation et procédé de fabrication de celui-ci |
US8539395B2 (en) * | 2010-03-05 | 2013-09-17 | Micronic Laser Systems Ab | Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image |
NL1037820C2 (en) | 2010-03-22 | 2011-09-23 | Mapper Lithography Ip Bv | Lithography system, sensor, sensor surface element and method of manufacture. |
EP3640968B1 (fr) * | 2010-11-13 | 2024-06-12 | ASML Netherlands B.V. | Procédé pour déterminer une distance entre deux mini-faisceaux dans un appareil d'exposition à mini-faisceaux multiples |
US8884255B2 (en) * | 2010-11-13 | 2014-11-11 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
NL2019502B1 (en) * | 2016-09-08 | 2018-08-31 | Mapper Lithography Ip Bv | Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system |
-
2017
- 2017-12-22 WO PCT/JP2017/047416 patent/WO2018117275A1/fr active Search and Examination
- 2017-12-22 CN CN202210036020.9A patent/CN114355733B/zh active Active
- 2017-12-22 EP EP17884025.2A patent/EP3559752A4/fr active Pending
- 2017-12-22 KR KR1020197021442A patent/KR102359084B1/ko active IP Right Grant
- 2017-12-22 CN CN201780086059.9A patent/CN110268330B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116732A (ja) * | 1981-12-29 | 1983-07-12 | Fujitsu Ltd | 荷電ビ−ム露光方法および装置 |
US20020160311A1 (en) * | 2001-04-23 | 2002-10-31 | Canon Kabushiki Kaisha | Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus |
US20030141462A1 (en) * | 2002-01-30 | 2003-07-31 | International Business Machines Corporation | Multi-beam shaped beam lithography system |
US20060064191A1 (en) * | 2003-02-20 | 2006-03-23 | Hidemitsu Naya | Semiconductor device and semiconductor production management system |
US20150026650A1 (en) * | 2013-07-17 | 2015-01-22 | Arm Limited | Integrated circuit manufacture using direct write lithography |
Non-Patent Citations (2)
Title |
---|
PARKER N W ET AL: "A high throughput electron-beam direct-write lithography system", MICROLITHOGRAPHY WORLD, PENNWELL CORPORATION, US, vol. 9, no. 3, 1 January 2000 (2000-01-01), pages 22, 24 - 25, 30, XP009195346, ISSN: 1074-407X * |
See also references of WO2018117275A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN114355733B (zh) | 2024-03-15 |
CN110268330B (zh) | 2022-01-28 |
KR20190098222A (ko) | 2019-08-21 |
KR102359084B1 (ko) | 2022-02-07 |
CN114355733A (zh) | 2022-04-15 |
WO2018117275A1 (fr) | 2018-06-28 |
EP3559752A1 (fr) | 2019-10-30 |
CN110268330A (zh) | 2019-09-20 |
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Legal Events
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
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17P | Request for examination filed |
Effective date: 20190717 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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AX | Request for extension of the european patent |
Extension state: BA ME |
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DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: WIELAND, MARCO JAN-JACO Inventor name: VAN KERVINCK, MARCEL NICOLAAS JACOBUS Inventor name: KUIPER, VINCENT SYLVESTER |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20200716 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01J 37/302 20060101ALI20200710BHEP Ipc: H01L 21/82 20060101ALI20200710BHEP Ipc: H01J 37/317 20060101ALI20200710BHEP Ipc: G03F 7/20 20060101AFI20200710BHEP |
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P01 | Opt-out of the competence of the unified patent court (upc) registered |
Effective date: 20230414 |