EP3472583A1 - Capteur élémentaire infrarouge thermopile pour mesures de températures ou détection de gaz - Google Patents

Capteur élémentaire infrarouge thermopile pour mesures de températures ou détection de gaz

Info

Publication number
EP3472583A1
EP3472583A1 EP17729482.4A EP17729482A EP3472583A1 EP 3472583 A1 EP3472583 A1 EP 3472583A1 EP 17729482 A EP17729482 A EP 17729482A EP 3472583 A1 EP3472583 A1 EP 3472583A1
Authority
EP
European Patent Office
Prior art keywords
sensor
thermopile
individual
infrared
thermopile infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17729482.4A
Other languages
German (de)
English (en)
Inventor
Marion Simon
Mischa Schulze
Wilhelm Leneke
Karlheinz Storck
Frank Herrmann
Christian Schmidt
Jörg SCHIEFERDECKER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HEIMANN Sensor GmbH
Original Assignee
HEIMANN Sensor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HEIMANN Sensor GmbH filed Critical HEIMANN Sensor GmbH
Publication of EP3472583A1 publication Critical patent/EP3472583A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0014—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiation from gases, flames
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0037—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the heat emitted by liquids
    • G01J5/004—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the heat emitted by liquids by molten metals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/048—Protective parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J2005/065—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J2005/123—Thermoelectric array

Definitions

  • Thermopile infrared single sensor for temperature measurements or for gas detection
  • thermopile single sensor for temperature measurements or gas detection in monolithic Si micromechanical technology in a filled with a gas medium housing with optics and one or more
  • Infrared-sensitive areas are spanned by in each case at least one beam over a cavity in a good heat-conducting support body.
  • DE 101 44 342 A1 shows a thermopile sensor chip which, with vertical or nearly vertical walls, has the largest possible membrane as an IR-receiving surface in order to maximize the signal to be received on the membrane with an IR-sensitive surface.
  • the membrane is clamped over a recess in a silicon support body, which is also designed as a heat sink.
  • thermopile elements whose hot ends are positioned on the membrane and the cold ends are located on a Si support body.
  • thermocouples such as Thermopile- elements
  • sensor chip in a housing with thermocouples
  • thermocouples In order to obtain as signal voltage as possible in thermopile sensor elements, their thermocouples must be made as long as possible, because less heat conduction and thus a higher temperature difference between the hot and cold end of the thermocouples is achieved.
  • the sensitive sensor surface alone has to be quite large, e.g. l x l mm, or larger.
  • the sensor chips themselves are then significantly larger, which is disadvantageous for the user.
  • the disadvantage is that the signal voltage achieved per area is not sufficient for many applications, the large area also has a high time constant (thermal inertia) and thus requires too slow a reaction time. As a result, homogeneous, unstructured membranes with many thermocouples can not achieve the required signal voltage with a short reaction time.
  • WO 91 02229 A1 proposes a single thermopile sensor in which a single free-floating membrane is arranged above a cutout in the chip body, which is arranged over as long a beam as possible with a heat sink, i. the edge of the chip body, is connected.
  • thermopile infrared sensor in monolithic Si micromechanics
  • the sensor chip membrane is provided with slots and a IR radiation receiving inner surface is suspended with the absorber area on thin webs, on the few thermocouples from the Si edge ("Cold” contacts) to the absorber area ("warm” contacts).
  • the sensor element is in a
  • thermocouples Surrounds recess. Above the recess is a membrane. However, a variety of rather short thermocouples are provided, which do not allow high sensitivity.
  • the recesses are formed by micromechanical
  • the disadvantage here is the short distance between the sensor structure on the membrane and the
  • thermopile
  • the absorber area on the membrane is over a long beam and a few thermocouples held in the membrane holes or slots.
  • the beam with the thermocouples and a width of 130 ym is isolated by however also wide slots from the substrate edge and the absorber area. That under the
  • the wide slots prevent optimal use of area (degree of filling) of the sensor cell.
  • the total sensor cell should be about 2x2 mm in size.
  • the oblique outgoing substrate walls do not allow small sensor cells or cell gaps.
  • Receive area leads to slow response speed and a high time constant, so that many measurement tasks that require fast measurements are not possible.
  • Chip technology without sufficient thermal isolation of the absorber to achieve low signals per area, or have sufficiently large sensitive area of the individual absorber area too high time constants and therefore react too slow and slow in a measurement task.
  • the object of the invention is a thermopile infrared sensor in monolithic Si micromechanics
  • thermopile infrared single sensor of the type mentioned in that in each case a plurality of individual adjacent sensor cells each having an infrared sensitive area with Thermopile Jardin on the membrane on a common support body of a single chip to a single thermopile sensor structure with a signal output in the housing, consisting of a closed cap with a base plate, with common gas medium
  • Series connection, parallel connection or combined in a combination of series and parallel connection to an output signal and led out via a connection is
  • the cavity under each membrane with the infrared sensitive areas perpendicular or nearly
  • the cavity beneath each membrane having the infrared sensitive regions may have slanted walls etched from the front through the slits in the membrane.
  • the common gas medium is preferably a gas of significantly higher molar mass than air, such as xenon, krypton, argon under normal atmospheric pressure.
  • the gas medium is a gas or gas mixture having a pressure which is significantly lower than normal
  • Sensor chips are routed via an individual preprocessing channel with an individual preamplifier, impedance transformer or analog to digital converter, with some or
  • Signal processing units such as temperature or light
  • Carrier or housed on an adjacent semiconductor chip within the sensor housing in the common gas medium.
  • Thermopile Conceptuents: consist of in one CMOS process applied n- and p-type polysilicon, amorphous silicon, germanium or a mixed form
  • thermoelectric thin metal layers of bismuth or antimony to ensure cost-effective production.
  • Single sensors are advantageously suitable for use in NDIR gas detection.
  • Fig. 1 the basic structure of a thermopile according to the invention
  • Fig. 2 a plan view of an inventive
  • thermopile sensor chip with 4-fold structured sensor cell; a plan view of an inventive
  • thermopile sensor Single chip with 9-fold structured sensor cell, each in series connection; an embodiment of the thermopile sensor according to the invention with summation of the signals of the individual structures via preamplifier or
  • Sensor structure with a multi-channel sensor, e.g. for gas detection
  • Fig. 6 an enlarged view of the detail A from
  • thermopile infrared individual sensor The basic structure of a thermopile infrared individual sensor according to the invention on a single chip is shown in FIG. 1a, b.
  • the thermopile individual sensor is constructed on a common frame-shaped semiconductor support body 1, for example made of silicon, and is located in one
  • Sensor housing consisting of a bottom plate 2, and a base plate 3 with electrical terminals 4, which are connected via a respective wire bridge 5 with connection pads 6 on the frame-shaped semiconductor support body 1 (Fig. 2, 3), and a cap 7 with an aperture opening 8 and an optic 9, wherein the sensor housing 10 encloses a gas medium tight.
  • the support body 1 is provided with a cavity 11 formed by a membrane 12 having a sensitive area
  • the gas medium 10 is a gas or gas mixture containing a
  • the gas medium 10 is a gas with a high molar mass, such as xenon, krypton or
  • Argon or a gas with a compared to normal air pressure significantly reduced internal pressure.
  • the sensor housing must be closed so that no gas exchange with the environment can occur.
  • the sensor chip consisting of the support body 1 of a
  • Single chips contains a plurality of individual cells 18 with a slotted membrane 12 and a beam structure 13, on the thermocouples 13 as Thermopile Modellen, are housed, the "hot” contact 14 is located on the membrane 12 and the “cold” contact 15 on the support body. 1 Furthermore, there is a thin on the membrane 12
  • Absorber layer 15 (preferably thinner than 1 ym) to make the thermal mass of the sensitive area low and the response speed high. Between the membrane 12 and the beams 13, and between these and the support body 1 are slots 17 for thermal separation (Fig. 2, 3, 6).
  • thermocouples of the thermopile structure are made of known thermoelectric materials of different thermoelectric polarity. This may include both semiconductor materials deposited in a CMOS process, such as e.g. n-type and p-type poly-silicon
  • thermoelectric thin metal layers such as bismuth, antimony or the like
  • the membranes 12 with the beams 13 and the sensitive area are clamped on the support body 1 via the cavities 11.
  • These cavities 11 may be introduced, for example, by dry etching (Deep RIE) from the wafer backside, and then preferably have vertical walls ( Figure 1 a), or may be obtained by etching sacrificial layers or the semiconductor substrate itself from the front through slots 17 (Fig. 2, 3) in the semiconductor substrate for forming the support body 1 through the membrane 12th
  • thermopile single sensor closely adjacent several smaller cells 18 (eg 2, 4, 9 or 16 cells) with slotted diaphragms 12, the interconnection by a just as large receiving surface, as known Single element thermopile chips form, wherein the gas medium 10 enables high individual signals per cell 18.
  • thermopile chip Due to the relatively small dimensions of the individual cells 18 and their sensitive areas on the respective membranes 12, significantly lower time constants and higher response rates result than with a non-segmented thermopile chip of conventional size.
  • thermopile chips in turn leads to a significantly higher signal voltage for the same size of the thermopile chip.
  • each cell 18 acts like a single thermopile known per se, only the geometric surface of the individual cells 18 typically much smaller than the usual
  • Thermopile single sensor Thermopile single sensor.
  • thermopile single sensor has + and - terminals (bond pads 5). All formed as a thermopile cells 18 are combined with each other
  • thermopile single sensor interconnected.
  • all cells 18 of a thermopile individual sensor are preferably connected in series, in each case the + and - terminals being connected together like individual batteries in a battery block.
  • parallel connection or a combination of series and parallel connection.
  • FIG. 2 shows a 4-fold cell structuring and FIG. 3 shows a 9-fold cell structuring.
  • a further embodiment of the invention consists in the use of preamplifiers or impedance converters 19 or electronic summers 20 or multiplexers /
  • Preamplifiers and low pass 19 and a summer 20 or a multiplexer can both on the same
  • Substrate such as the Thermopile single sensor, or on a separate chip but in the case, or outside the
  • Housing be housed.
  • the summation can also be done in a micro-processor which processes the pre-amplified, filtered and multiplexed signals of the individual cells 18.
  • the summation element 20 preferably consists of a signal multiplexer for all cells 18 and
  • Downstream AD / converter with microprocessor which adds the signals of all cells 18 low noise.
  • the structure of at least part of the signal processing is housed in the housing, because then electrical or
  • thermocouples of a cell 18 connected in series, so the signal increases, but also the
  • Impedance thermocouple, resistor
  • NDIR NDIR gas detection
  • thermopile infrared sensors it is advantageous to integrate two or more sensor channels from a respective thermopile individual sensor in a housing, that is, two or four thermopile infrared individual sensors according to the invention are arranged side by side in a housing. This allows several gases to be measured simultaneously.
  • one of the sensor channels with a Reference filter, which significantly improves the long-term stability and drift resistance.
  • the one or more other channels then measure one or more specific gases.
  • a multi-channel Thermopilesensor Fig. 5 shows a dual Thermopilesensor, the NDIR
  • Gas detection is particularly suitable.
  • thermopile individual sensor per channel
  • thermopile individual sensors 21, 22 are arranged side by side under a common cap 26 on a common one
  • Bottom plate 27 is arranged, with a separate optical filter 23, 24 is provided for each channel.
  • an optical partition 25 is recommended between adjacent
  • the partition wall 25 must absorb the infrared radiation and must neither let through nor reflect it.
  • each cell 18 a common ground pin (minus terminal) are assigned to the bottom plate 27 and the plus terminals are each an individual
  • connection led out can be Alternatively, several channels can be routed via a preamplifier and low pass to a multiplexer and read out successively via an output line.
  • the combined Thermopile single cells can all be located on the same chip, which the
  • Single chips as shown in Figure 5, be housed. Depending on the size, 2 to 4, but also 10 or more individual channels may be located in one housing.
  • the partitions 18 can be mounted on both the bottom plate 27, or in the cap 26. In addition to the signal processing channels and the electronic summing can more electronic
  • Signal processing units e.g., with temperature or voltage references or an arithmetic circuit for
  • Calculation of object temperatures or gas concentrations can be accommodated on the same semiconductor support body 1 within the sensor housing.
  • Thermopile infrared single sensor for temperature measurements or for gas detection

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

L'invention concerne un capteur élémentaire infrarouge thermopile disposé dans un boîtier, rempli d'un milieu gazeux, doté d'une optique ainsi que d'une ou de plusieurs puces de capteur ayant des cellules de capteur individuelles présentant des structures de capteurs infrarouges avec des membranes réticulées dont des zones sensibles aux infrarouges sont tendues chacune par au moins un montant au-dessus d'un évidement dans un corps porteur bon conducteur thermique. L'invention a pour objet un capteur infrarouge thermopile, réalisé selon une technique de micromécanique à base de silicium monolithique et destiné à des mesures de températures sans contact, qui, en cas d'une surface de réception suffisamment grande, délivre un fort signal avec une vitesse de réponse élevée, qui peut être utilisé dans un milieu gazeux sous pression normale ou sous pression réduite et qui peut être fabriqué en très grand nombre sans techniques complexes pour la fermeture du boîtier. Cet objectif est atteint en ce que plusieurs cellules de capteur individuelles voisines (18) ayant chacune une zone sensible aux infrarouges avec des structures thermopiles (14, 15) sur la membrane (12) sont regroupées avec un milieu gazeux commun (10) respectivement sur un corps porteur commun (1) d'une puce élémentaire en une structure de capteurs thermopiles ayant une sortie de signal dans le boîtier, se composant d'un couvercle (12) fermé avec une plaque de base (3).
EP17729482.4A 2016-06-21 2017-06-13 Capteur élémentaire infrarouge thermopile pour mesures de températures ou détection de gaz Withdrawn EP3472583A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016111349 2016-06-21
PCT/EP2017/064429 WO2017220381A1 (fr) 2016-06-21 2017-06-13 Capteur élémentaire infrarouge thermopile pour mesures de températures ou détection de gaz

Publications (1)

Publication Number Publication Date
EP3472583A1 true EP3472583A1 (fr) 2019-04-24

Family

ID=59054138

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17729482.4A Withdrawn EP3472583A1 (fr) 2016-06-21 2017-06-13 Capteur élémentaire infrarouge thermopile pour mesures de températures ou détection de gaz

Country Status (7)

Country Link
US (2) US10794768B2 (fr)
EP (1) EP3472583A1 (fr)
JP (1) JP2019518960A (fr)
KR (1) KR102214389B1 (fr)
CN (1) CN109313079A (fr)
DE (1) DE102017113023A1 (fr)
WO (1) WO2017220381A1 (fr)

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CN110146136B (zh) * 2019-06-21 2020-08-28 中国科学院上海微系统与信息技术研究所 热堆式气体质量流量传感器及其制备方法
CN111735546B (zh) * 2020-06-04 2023-11-10 郑州炜盛电子科技有限公司 传感器装配壳体、无引线热电堆传感器及制作方法
WO2023128782A1 (fr) * 2021-12-29 2023-07-06 Общество с ограниченной ответственностью "СТЭК-М" Capteur de température à thermocouple à un élément infrarouge
JP2024002465A (ja) * 2022-06-24 2024-01-11 浜松ホトニクス株式会社 赤外線検出器
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KR102214389B1 (ko) 2021-02-08
DE102017113023A1 (de) 2017-12-21
US20200370963A1 (en) 2020-11-26
US20190265105A1 (en) 2019-08-29
WO2017220381A1 (fr) 2017-12-28
JP2019518960A (ja) 2019-07-04
KR20190016538A (ko) 2019-02-18
CN109313079A (zh) 2019-02-05
US10794768B2 (en) 2020-10-06

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